Laufende studentische ArbeitenMA: Temperature-Dependent Dissolution of GaN under matched Ammonothermal Conditions – gravimetric analysis utilizing capsules with high thermal conductivity
Maitri Bharatbhai Savani – Nitride semiconductors, as wide-bandgap semiconductors, playing an increasingly Owing to their wide bandgap characteristics, nitride semiconductors are increasingly important as substrate materials for power electronic devices. Ammonothermal crystal growth is a promising growth method for gallium nitride (GaN). The advantage of this method is the ability to produce crystals with very […]Maitri Bharatbhai Savani – Nitride semiconductors, as wide-bandgap semiconductors, playing an increasingly Owing to their wide bandgap characteristics, nitride semiconductors are increasingly important as substrate materials for power electronic devices. Ammonothermal crystal growth is a promising growth method for gallium nitride (GaN). The advantage of this method is the ability to produce crystals with very […]
