Completed 2026MA: Ni-Si and Multilayer Metallization Schemes for Rapid Thermal Annealed Ohmic Contacts to 4H-SiC
Lutz Hager – Silicon carbide (4H-SiC) power electronics require reliable, low-resistance ohmic contacts. While nickel (Ni) is the industry standard for n-type 4H-SiC, conventional Rapid Thermal Processing (RTP) metallisation requires thermal budgets exceeding 1000 ◦C, causing severe substrate decomposition, carbon clustering, and irregular interfaces that limit device reliability. To address this, this thesis investigates Ni-Si […]Lutz Hager – Silicon carbide (4H-SiC) power electronics require reliable, low-resistance ohmic contacts. While nickel (Ni) is the industry standard for n-type 4H-SiC, conventional Rapid Thermal Processing (RTP) metallisation requires thermal budgets exceeding 1000 ◦C, causing severe substrate decomposition, carbon clustering, and irregular interfaces that limit device reliability. To address this, this thesis investigates Ni-Si […]
