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    1. Friedrich-Alexander-Universität
    2. Technische Fakultät
    3. Department Elektrotechnik-Elektronik-Informationstechnik

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    • Halbleiterbauelemente (AG Schulze)
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    Publikationen

    2025

    • Chatterjee A., Wostatek T., Schimmel S.:
      Growth kinetics - a key aspect of every semiconductor synthesis
      13th annual meeting of the young crystal growers (jDGKK) (Frankfurt am Main, 4. März 2025 - 4. März 2025)
    • Geuß M., Löttert L., Hutzler A., Schwarz J., Nováková J., Khalakhan I., Gaberšček M., Mayrhofer KJ., Thiele S., Cherevko S.:
      Platinum interlayers reduce charge transport barriers between amorphous Ir-oxide OER electrocatalysts and the porous transport layer
      In: Chemical Engineering Journal 514 (2025), Art.Nr.: 162887
      ISSN: 1385-8947
      DOI: 10.1016/j.cej.2025.162887
    • Medvedev V., Erdmann A., Rosskopf A.:
      Physics-informed deep learning for 3D modeling of light diffraction from optical metasurfaces
      In: Optics Express 33 (2025), S. 1371-1384
      ISSN: 1094-4087
      DOI: 10.1364/OE.544116
    • Schwarz J., Niebauer M., Römling L., Pham A., Kolesnik-Gray M., Evanschitzky P., Vogel N., Krstic V., Rommel M., Hutzler A.:
      Spectro-Spatial Unmixing in Optical Microspectroscopy for Thickness Determination of Layered Materials
      In: Advanced Optical Materials 13 (2025), Art.Nr.: 2402502
      ISSN: 2195-1071
      DOI: 10.1002/adom.202402502
    • Wostatek T., Civas EN., Zheng J., Chirala VYMR., Schimmel S.:
      Emerging research directions in the field of nitride semiconductors
      13th annual meeting of the young crystal growers (jDGKK) (Frankfurt am Main, 4. März 2025)

    2024

    • Guiot E., Allibert F., Leib J., Becker T., Drouin A., Schwarzenbach W.:
      SiC engineered substrate: increasing SiC MOSFETs current density from device to module level
      39th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2024
      DOI: 10.1109/APEC48139.2024.10509052
    • Chirala VYMR., Schimmel S.:
      Fundamentals of ammonothermal growth of nitride crystals
      12th Annual jDGKK Meeting (Erlangen, 5. März 2024 - 5. März 2025)
    • Cornigli D., Schlichting H., Becker T., Larcher L., Erlbacher T., Pešić M.:
      Modelling-Augmented Failure Diagnostics in Planar SiC MOS Devices Using TDDB Measurements
      In: Solid State Phenomena 361 (2024), S. 93-98
      ISSN: 1012-0394
      DOI: 10.4028/p-jbV5Vq
    • Ghazal R.:
      Analyse und Modellierung mikrospektrometrischer Messungen an Dünnschichtsystemen unter Einsatz von Polarisationsoptiken (Masterarbeit, 2024)
    • Hack M., Kugler B., Wanitzek M., Vijayan P., Schulze J., Oehme M.:
      In situ, non-invasive novel measurement method for the determination of integrated waveguide losses
      Metamaterials, Metadevices, and Metasystems 2024 (San Diego, CA, 18. August 2024 - 22. August 2024)
      In: Nader Engheta, Mikhail A. Noginov, Nikolay I. Zheludev, Nikolay I. Zheludev (Hrsg.): Proceedings of SPIE - The International Society for Optical Engineering 2024
      DOI: 10.1117/12.3028025
    • Hack M., Seidel L., Wanitzek M., Oehme M., Schulze J., Schwarz D.:
      Utilizing direct Zener tunneling in Germanium for cryogenic quantum applications
      In: Materials Science in Semiconductor Processing 172 (2024), Art.Nr.: 108057
      ISSN: 1369-8001
      DOI: 10.1016/j.mssp.2023.108057
    • Hoffmeister D., Finger S., Fiedler L., Ma TC., Körner A., Zlatar M., Fritsch B., Bodnar KW., Carl S., Götz A., Zubiri BA., Will J., Spiecker E., Cherevko S., Freiberg A., Mayrhofer K., Thiele S., Hutzler A., van Pham C.:
      Photodeposition-Based Synthesis of TiO2@IrOx Core–Shell Catalyst for Proton Exchange Membrane Water Electrolysis with Low Iridium Loading
      In: Advanced Science (2024)
      ISSN: 2198-3844
      DOI: 10.1002/advs.202402991
    • Joch D., Lang T., Sanctis S., Jank MP.:
      Simulation-Guided Analysis towards Trench Depth Optimization for Enhanced Flexibility in Stretch-Free, Shape-Induced Interconnects for Flexible Electronics
      In: Materials 17 (2024), Art.Nr.: 3849
      ISSN: 1996-1944
      DOI: 10.3390/ma17153849
    • Joch D., Lehninger D., Sunil A., Sanctis S., Lang T., Zeltner J., Wartenberg P., Seidel K., Jank MP.:
      Precise Compensation of Device Variability in IGZO-based Ferroelectric ThinFilm Transistors for Enhanced Transparent Display Performance
      International Symposium, Seminar, and Exhibition, Display Week 2024 (San Jose, CA, USA, 12. Mai 2024 - 17. Mai 2024)
      In: Digest of Technical Papers - SID International Symposium 2024
      DOI: 10.1002/sdtp.17463
    • Ley M., Dick J., Schulze J.:
      Ab Initio Calculations to Determine Tunneling Parameters for 4H-SiC Tunneling Field-Effect Transistor Simulations
      47th ICT and Electronics Convention, MIPRO 2024 (Opatija, HRV, 20. Mai 2024 - 24. Mai 2024)
      In: Snjezana Babic, Zeljka Car, Marina Cicin-Sain, Dragan Cisic, Pavle Ergovic, Tihana Galinac Grbac, Vera Gradisnik, Stjepan Gros, Andrej Jokic, Alan Jovic, Darko Jurekovic, Tihomir Katulic, Marko Koricic, Vedran Mornar, Juraj Petrovic, Karolj Skala, Dejan Skvorc, Vlado Sruk, Marko Svaco, Edvard Tijan, Neven Vrcek, Boris Vrdoljak (Hrsg.): 2024 47th ICT and Electronics Convention, MIPRO 2024 - Proceedings 2024
      DOI: 10.1109/MIPRO60963.2024.10569785
    • May A., Rommel M., Baier L., Schraml M., Dick J., Jank MP., Schulze J.:
      A 4H-SiC CMOS Technology enabling Smart Sensor Integration and Circuit Operation above 500 °C
      2024 Smart Systems Integration Conference and Exhibition, SSI 2024 (Hamburg, 16. April 2024 - 18. April 2024)
      In: 2024 Smart Systems Integration Conference and Exhibition, SSI 2024 2024
      DOI: 10.1109/SSI63222.2024.10740550
    • Okeil H., Erlbacher T., Wachutka G.:
      Very High Temperature Hall Sensors in a Wafer-Scale 4H-SiC Technology
      In: Advanced Materials Technologies (2024)
      ISSN: 2365-709X
      DOI: 10.1002/admt.202400046
    • Popp L., Kampe P., Fritsch B., Hutzler A., Poller MJ., Albert J., Schühle P.:
      Supported Ruthenium Phosphide as a Promising Catalyst for Selective Hydrogenation of Sugars
      In: European Journal of Inorganic Chemistry (2024)
      ISSN: 1434-1948
      DOI: 10.1002/ejic.202400117
    • Rusch O., Brueckner K., Erlbacher T.:
      Increasing 4H-SiC Trench Depth by Improving the Dry Etch Selectivity towards the Oxide Hard Mask
      DOI: 10.4028/p-1PoMgV
    • Scheller D., Hrunski F., Schwarberg J., Knolle W., Soykal ÖO., Udvarhelyi P., Narang P., Weber HB., Hollendonner M., Nagy R.:
      Quantum enhanced electric field mapping within semiconductor devices
      In: arXiv (2024)
      ISSN: 2331-8442
      DOI: 10.48550/arXiv.2410.10750
    • Schimmel S., Tomida D., Ishiguro T., Honda Y., Chichibu SF., Amano H.:
      Transition from etch-back to growth conditions during ammonothermal growth of GaN – a transient numerical model for convective flow and temperature distribution in a retrograde solubility configuration
      GaN Marathon (Verona, 9. Juni 2024 - 12. Juni 2024)
    • Schraml M., Rommel M., Papathanasiou N., Erlbacher T.:
      Device Modeling of 4H-SiC PIN Photodiodes with Shallow Implanted Al Emitters for VUV Sensor Applications
      In: Key Engineering Materials 984 (2024), S. 55-62
      ISSN: 1013-9826
      DOI: 10.4028/p-T0xLa9
    • Schwarberg J., Karhu R., Kallinger B., Rommel M., Schmidt R., Schulze J.:
      Investigation of CMOS Single Process Steps on 4H-SiC a-Plane Wafers for Quantum Applications
      47th ICT and Electronics Convention, MIPRO 2024 (Opatija, 20. Mai 2024 - 24. Mai 2024)
      In: Snjezana Babic, Zeljka Car, Marina Cicin-Sain, Dragan Cisic, Pavle Ergovic, Tihana Galinac Grbac, Vera Gradisnik, Stjepan Gros, Andrej Jokic, Alan Jovic, Darko Jurekovic, Tihomir Katulic, Marko Koricic, Vedran Mornar, Juraj Petrovic, Karolj Skala, Dejan Skvorc, Vlado Sruk, Marko Svaco, Edvard Tijan, Neven Vrcek, Boris Vrdoljak (Hrsg.): 2024 47th ICT and Electronics Convention, MIPRO 2024 - Proceedings 2024
      DOI: 10.1109/MIPRO60963.2024.10569589
    • Seidel L., Liu T., Concepcion O., Spirito D., Benkhelifa A., Kiyek V., Schulze J., Marzban B., Capellini G., Witzens J., Grützmacher D., Buca D., Oehme M.:
      Pulse tunable SiGeSn/GeSn multi-quantum-well microdisk lasers
      Metamaterials, Metadevices, and Metasystems 2024 (San Diego, CA, USA, 18. August 2024 - 22. August 2024)
      In: Nader Engheta, Mikhail A. Noginov, Nikolay I. Zheludev, Nikolay I. Zheludev (Hrsg.): Proceedings of SPIE - The International Society for Optical Engineering 2024
      DOI: 10.1117/12.3028016
    • Seidel L., Liu T., Concepción O., Marzban B., Kiyek V., Spirito D., Schwarz D., Benkhelifa A., Schulze J., Ikonic Z., Hartmann JM., Chelnokov A., Witzens J., Capellini G., Oehme M., Grützmacher D., Buca D.:
      Continuous-wave electrically pumped multi-quantum-well laser based on group-IV semiconductors
      In: Nature Communications 15 (2024), Art.Nr.: 10502
      ISSN: 2041-1723
      DOI: 10.1038/s41467-024-54873-z
    • Stolzke T., Schwarz J., März M.:
      Simplifying Random Particle Structures within Soft Magnetic Composite Materials for the Optimization of 3D-FEM Simulations
      In: IEEE Transactions on Magnetics (2024), S. 1-1
      ISSN: 0018-9464
      DOI: 10.1109/TMAG.2024.3434611
    • Sun J., Fritsch B., Körner A., Taherkhani M., Park C., Wang M., Hutzler A., Woehl TJ.:
      Discovery of Molecular Intermediates and Nonclassical Nanoparticle Formation Mechanisms by Liquid Phase Electron Microscopy and Reaction Throughput Analysis
      In: Small Structures (2024)
      ISSN: 2688-4062
      DOI: 10.1002/sstr.202400146
    • Wanitzek M., Hack M., Ramachandra H., Seidel L., Schwarz D., Schulze J., Oehme M.:
      Reduction of dark current in Ge-on-Si avalanche photodiodes using a double mesa structure
      Metamaterials, Metadevices, and Metasystems 2024 (San Diego, CA, 18. August 2024 - 22. August 2024)
      In: Nader Engheta, Mikhail A. Noginov, Nikolay I. Zheludev, Nikolay I. Zheludev (Hrsg.): Proceedings of SPIE - The International Society for Optical Engineering 2024
      DOI: 10.1117/12.3028061
    • Wanitzek M., Hack M., Schwarz D., Schulze J., Oehme M.:
      Low-temperature performance of GeSn-on-Si avalanche photodiodes toward single-photon detection
      In: Materials Science in Semiconductor Processing 176 (2024), Art.Nr.: 108303
      ISSN: 1369-8001
      DOI: 10.1016/j.mssp.2024.108303
    • Wanitzek M., Schulze J., Oehme M.:
      Ge-on-Si single-photon avalanche diode using a double mesa structure
      In: Optics Letters 49 (2024), S. 6345-6348
      ISSN: 0146-9592
      DOI: 10.1364/OL.534436
    • Wanitzek M., Schwarz D., Schulze J., Oehme M.:
      Bandwidth enhancement in GeSn-on-Si avalanche photodiodes with a 60 GHz gain-bandwidth-product
      2024 IEEE Silicon Photonics Conference, SiPhotonics 2024 (Tokyo, JPN, 15. April 2024 - 18. April 2024)
      In: IEEE International Conference on Group IV Photonics GFP 2024
      DOI: 10.1109/SiPhotonics60897.2024.10543351
    • Wostatek T., Chirala VYMR., Stoddard N., Civas EN., Pimputkar S., Schimmel S.:
      Ammonothermal Crystal Growth of Functional Nitrides for Semiconductor Devices: Status and Potential
      In: Materials (2024)
      ISSN: 1996-1944
      DOI: 10.3390/ma17133104
    • Wostatek T., Schimmel S.:
      Nitride semiconductor crystal growth at FAU Erlangen-Nürnberg
      12th annual meeting of the young crystal growers (Erlangen, 5. März 2024 - 5. März 2024)
    • Zhao D., Letz S., Jank M., März M.:
      Adhesion strength of ductile thin film determined by cross-sectional nanoindentation
      In: International Journal of Mechanical Sciences 270 (2024), Art.Nr.: 109103
      ISSN: 0020-7403
      DOI: 10.1016/j.ijmecsci.2024.109103

    2023

    • Baierhofer D., Thomas B., Staiger F., Marchetti B., Förster C., Erlbacher T.:
      Correlation of Extended Defects with Electrical Yield of SiC MOSFET Devices
      In: Defect and Diffusion Forum 426 (2023), S. 11-16
      ISSN: 1012-0386
      DOI: 10.4028/p-i82158
    • Guiot E., Allibert F., Leib J., Becker T., Erlbacher T.:
      Improved Power Cycling Reliability through the use of SmartSiC ™ Engineered Substrate for Power Devices
      2023 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2023
      DOI: 10.30420/566091210
    • Guiot E., Allibert F., Leib J., Becker T., Schwarzenbach W., Hellinger C., Erlbacher T., Rouchier S.:
      Proven Power Cycling Reliability of Ohmic Annealing Free SiC Power Device Through the Use of SmartSiC™ Substrate
      Trans Tech Publications Ltd, 2023
      DOI: 10.4028/p-777hqg
    • Schlichting H., Lim M., Becker T., Kallinger B., Erlbacher T.:
      The Influence of Extended Defects in 4H-SiC Epitaxial Layers on Gate Oxide Performance and Reliability
      Trans Tech Publications Ltd, 2023
      DOI: 10.4028/p-4i3rhf
    • Berkmann F., Steuer O., Ganss F., Prucnal S., Schwarz D., Fischer IA., Schulze J.:
      Sharp MIR plasmonic modes in gratings made of heavily doped pulsed laser-melted Ge1-xSnx
      In: Optical Materials Express 13 (2023), S. 752-763
      ISSN: 2159-3930
      DOI: 10.1364/OME.479637
    • Couasnon T., Fritsch B., Jank MP., Blukis R., Hutzler A., Benning LG.:
      Goethite Mineral Dissolution to Probe the Chemistry of Radiolytic Water in Liquid-Phase Transmission Electron Microscopy
      In: Advanced Science 10 (2023), Art.Nr.: 2301904
      ISSN: 2198-3844
      DOI: 10.1002/advs.202301904
    • Fritsch B., Körner A., Couasnon T., Blukis R., Taherkhani M., Benning LG., Jank M., Spiecker E., Hutzler A.:
      Tailoring the Acidity of Liquid Media with Ionizing Radiation: Rethinking the Acid-Base Correlation beyond pH
      In: Journal of Physical Chemistry Letters (2023), S. 4644-4651
      ISSN: 1948-7185
      DOI: 10.1021/acs.jpclett.3c00593
    • Geiling J., Wagner L., Auer F., Ortner F., Nuß A., Seyfried R., Stammberger F., Steinberger M., Bösmann A., Öchsner R., Wasserscheid P., Graichen K., März M., Preuster P.:
      Operational experience with a liquid organic hydrogen carrier (LOHC) system for bidirectional storage of electrical energy over 725 h
      In: Journal of Energy Storage 72 (2023), Art.Nr.: 108478
      ISSN: 2352-152X
      DOI: 10.1016/j.est.2023.108478
    • Hutzler A., Fritsch B., Matthus CD., Jank MP., Rommel M.:
      Author Correction: Highly accurate determination of heterogeneously stacked Van-der-Waals materials by optical microspectroscopy (Scientific Reports, (2020), 10, 1, (13676), 10.1038/s41598-020-70580-3)
      In: Scientific Reports 13 (2023), Art.Nr.: 1410
      ISSN: 2045-2322
      DOI: 10.1038/s41598-023-28605-0
    • Kolesnik-Gray M., Meingast L., Siebert M., Unbehaun T., Huf T., Ellrott G., Abellan Saez G., Wild S., Lloret Segura VJ., Mundloch U., Schwarz J., Niebauer M., Szabo M., Rommel M., Hutzler A., Hauke F., Hirsch A., Krstic V.:
      Unconventional conductivity increase in multilayer black phosphorus
      In: npj 2D Materials and Applications 7 (2023), Art.Nr.: 21
      ISSN: 2397-7132
      DOI: 10.1038/s41699-023-00384-2
    • Marhenke J., Dirnecker T., Vogel N., Rommel M.:
      Stiffness influence on particle separation in polydimethylsiloxane-based deterministic lateral displacement devices
      In: Microfluidics and Nanofluidics 27 (2023), Art.Nr.: 76
      ISSN: 1613-4982
      DOI: 10.1007/s10404-023-02685-w
    • Pham A.:
      Systemübergreifende modulare Charakterisierung von Dünnschichtsystemen mittels Reflexionsmessungen (Masterarbeit, 2023)
    • Schimmel S.:
      Junior Research Group on Nitride Semiconductors
      Seminar of the Young Crystal Growers (DGKK) (, 14. März 2023)
    • Schimmel S., Tomida D., Ishiguro T., Honda Y., Chichibu SF., Amano H.:
      Temperature Field, Flow Field, and Temporal Fluctuations Thereof in Ammonothermal Growth of Bulk GaN—Transition from Dissolution Stage to Growth Stage Conditions
      In: Materials 16 (2023), S. 2016
      ISSN: 1996-1944
      DOI: 10.3390/ma16052016
    • Schlichting H., Lim M., Becker T., Kallinger B., Erlbacher T.:
      The Influence of Extended Defects in 4H-SiC Epitaxial Layers on Gate Oxide Performance and Reliability
      In: Materials Science Forum 1090 (2023), S. 127-133
      ISSN: 0255-5476
      DOI: 10.4028/p-4i3rhf
    • Schmidt R.:
      Einzelprozessentwicklung für die Herstellung von Halbleiterbauelementen auf 4H-SiC a-Plane Substraten (Masterarbeit, 2023)
    • Schraml M., Papathanasiou N., May A., Rommel M., Erlbacher T.:
      4H-SiC PIN Photodiode for VUV Detection Using an Enhanced Emitter Doping Design
      2023 IEEE Photonics Conference, IPC 2023 (Orlando, FL, USA, 12. November 2023 - 16. November 2023)
      In: 2023 IEEE Photonics Conference, IPC 2023 - Proceedings 2023
      DOI: 10.1109/IPC57732.2023.10360797
    • Schraml M., Papathanasiou N., May A., Weiss T., Erlbacher T.:
      Towards SiC-Based VUV Pin-Photodiodes - Investigations on 4H-SiC Photodiodes with Shallow Implanted Al Emitters
      DOI: 10.4028/p-959z1t
    • Schwarz J., Niebauer M., Kolesnik-Gray M., Szabo M., Baier L., Chava P., Erbe A., Krstic V., Rommel M., Hutzler A.:
      Correlating Optical Microspectroscopy with 4×4 Transfer Matrix Modeling for Characterizing Birefringent Van der Waals Materials
      In: Small Methods (2023)
      ISSN: 2366-9608
      DOI: 10.1002/smtd.202300618
    • Seidel L., Liu T., Marzban B., Kiyek V., Schulze J., Capellini G., Witzens J., Buca D., Oehme M.:
      SiGeSn/GeSn Multi Quantum Wells Light Emitting Diodes with a Negative Differential Resistance
      2023 IEEE Silicon Photonics Conference, SiPhotonics 2023 (Washington, DC, 4. April 2023 - 7. April 2023)
      In: IEEE International Conference on Group IV Photonics GFP 2023
      DOI: 10.1109/SiPhotonics55903.2023.10141960
    • Singh M., Abdelsamie M., Li Q., Kodalle T., Lee DK., Arnold S., Ceratti DR., Slack JL., Schwartz CP., Brabec C., Tao S., Sutter-Fella CM.:
      Effect of the Precursor Chemistry on the Crystallization of Triple Cation Mixed Halide Perovskites
      In: Chemistry of Materials (2023)
      ISSN: 0897-4756
      DOI: 10.1021/acs.chemmater.3c00799
    • Sk MR., Thunder S., Lehninger D., Sanctis S., Raffel Y., Lederer M., Jank MPM., Kaempfe T., De S., Chakrabarti B.:
      Ferroelectric Content-Addressable Memory Cells with IGZO Channel: Impact of Retention Degradation on the Multibit Operation
      In: ACS Applied Electronic Materials 5 (2023), S. 812-820
      ISSN: 2637-6113
      DOI: 10.1021/acsaelm.2c01357
    • Völkl A., Toutouly J., Drobek D., Apeleo Zubiri B., Spiecker E., Klupp Taylor R.:
      Gram-Scale Continuous Flow Synthesis of Silver-on-Silica Patchy Nanoparticles with Widely Tunable Resonances for Plasmonics Applications
      In: ACS Applied Nano Materials 6 (2023), S. 10126-10137
      ISSN: 2574-0970
      DOI: 10.1021/acsanm.3c00869
    • Kim S., Byun D.W., Shin H.K., Koo S.M., Erlbacher T., Lim M., Csato C., Förthner J., Rusch O., Ehrensberger K., Kupfer B., Beuer S., Oertel S.:
      A Modeling of 4H-SiC Super-Junction MOSFETs with Filtered High Energy Implantation
      Trans Tech Publications Ltd, 2023
      DOI: 10.4028/p-hyy2l9
    • Weißhaupt D., Funk HS., Oehme M., Bloos D., Berkmann F., Seidel L., Fischer IA., Schulze J.:
      High mobility Ge 2DHG based MODFETs for low-temperature applications
      In: Semiconductor Science and Technology 38 (2023), Art.Nr.: 035007
      ISSN: 0268-1242
      DOI: 10.1088/1361-6641/acb22f

    2022

    • Baierhofer D., Thomas B., Staiger F., Marchetti B., Foerster C., Erlbacher T.:
      Defect reduction in SiC epilayers by different substrate cleaning methods
      In: Materials Science in Semiconductor Processing 140 (2022)
      ISSN: 1369-8001
      DOI: 10.1016/j.mssp.2021.106414
    • Erlbacher T., Rouchier S., Guiot E., Picun G., Allibert F., Leib J., Becker T., Schwarzenbach W., Drouin A., Béthoux J.M., Widiez J.:
      Proven Power Cycling Reliability of SmartSiC™ Substrate for Power Devices
      International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2022
      DOI: 10.30420/565822081
    • Berkmann F., Augel L., Hack M., Kawaguchi Y., Weisshaupt D., Fischer IA., Schulze J.:
      Optimization of Fully Integrated Al Nanohole Array-Based Refractive Index Sensors for Use With a LED Light Source
      In: IEEE Photonics Journal 14 (2022)
      ISSN: 1943-0655
      DOI: 10.1109/JPHOT.2022.3177354
    • Boettcher N., Takamori T., Wada K., Saito W., Nishizawa SI., Erlbacher T.:
      Short Circuit Performance and Current Limiting Mode of a Monolithically Integrated SiC Circuit Breaker for DC Applications up to 800 v
      24th European Conference on Power Electronics and Applications, EPE 2022 ECCE Europe (Hannover, 5. September 2022 - 9. September 2022)
      In: 24th European Conference on Power Electronics and Applications, EPE 2022 ECCE Europe 2022
    • Daneri S., Kerschbaum A., Runa E.:
      One-dimensionality of the minimizers for a diffuse interface generalized antiferromagnetic model in general dimension
      In: Journal of Functional Analysis 283 (2022), Art.Nr.: 109715
      ISSN: 0022-1236
      DOI: 10.1016/j.jfa.2022.109715
    • Dreher V., Joch D., Kren H., Schwarberg J., Jank MP.:
      Ultrathin and flexible sensors for pressure and temperature monitoring inside battery cells
      2022 IEEE Sensors Conference, SENSORS 2022 (Dallas, TX, 30. Oktober 2022 - 2. November 2022)
      In: Proceedings of IEEE Sensors 2022
      DOI: 10.1109/SENSORS52175.2022.9967234
    • Friedrich RP., Kappes M., Cicha I., Tietze R., Braun C., Schneider-Stock R., Nagy R., Alexiou C., Janko C.:
      Optical Microscopy Systems for the Detection of Unlabeled Nanoparticles
      In: International Journal of Nanomedicine Volume 17 (2022), S. 2139-2163
      ISSN: 1176-9114
      DOI: 10.2147/IJN.S355007
    • Fritsch B., Wu M., Hutzler A., Zhou D., Spruit R., Vogl L., Will J., Pérez Garza H., März M., Jank M., Spiecker E.:
      Sub-Kelvin thermometry for evaluating the local temperature stability within in situ TEM gas cells
      In: Ultramicroscopy 235 (2022), S. 113494
      ISSN: 0304-3991
      DOI: 10.1016/j.ultramic.2022.113494
      URL: https://doi.org/10.1088/1361-6528/ab8a8c
    • Fritsch B., Zech T., Bruns M., Körner A., Khadivianazar S., Wu M., Zargar Talebi N., Virtanen S., Unruh T., Jank M., Spiecker E., Hutzler A.:
      Radiolysis‐Driven Evolution of Gold Nanostructures – Model Verification by Scale Bridging In Situ Liquid‐Phase Transmission Electron Microscopy and X‐Ray Diffraction
      In: Advanced Science 9 (2022), Art.Nr.: 2202803
      ISSN: 2198-3844
      DOI: 10.1002/advs.202202803
      URL: https://onlinelibrary.wiley.com/doi/10.1002/advs.202202803
    • Jena S.:
      Optimierung von Lithographieprozessen auf Germaniumoberflächen zur Herstellung von Nanodrähten (Bachelorarbeit, 2022)
    • Marhenke J., Dirnecker T., Vogel N., Rommel M.:
      Increasing flow rates in polydimethylsiloxane-based deterministic lateral displacement devices for sub-micrometer particle separation
      In: Microfluidics and Nanofluidics 27 (2022), Art.Nr.: 2
      ISSN: 1613-4982
      DOI: 10.1007/s10404-022-02609-0
    • Marzban B., Seidel L., Kiyek V., Liu T., Zöllner M., Ikonic Z., Capellini G., Buca D., Schulze J., Oehme M., Witzens J.:
      Modeling and design of an electrically pumped SiGeSn microring laser
      Silicon Photonics XVII 2022 (Online, 20. Februar 2022 - 24. Februar 2022)
      In: Graham T. Reed, Andrew P. Knights (Hrsg.): Proceedings of SPIE - The International Society for Optical Engineering 2022
      DOI: 10.1117/12.2609537
    • Marzban B., Seidel L., Liu T., Kiyek V., Wu K., Zollner MH., Ikonik Z., Schulze J., Grutzmacher D., Capellini G., Oehme M., Witzens J., Buca D.:
      Electrically pumped SiGeSn microring lasers
      2022 IEEE Photonics Society Summer Topicals Meeting Series, SUM 2022 (Cabo San Lucas, MEX, 11. Juli 2022 - 13. Juli 2022)
      In: 2022 IEEE Photonics Society Summer Topicals Meeting Series, SUM 2022 - Proceedings 2022
      DOI: 10.1109/SUM53465.2022.9858260
    • May A., Rommel M., Beuer S., Erlbacher T.:
      Via Size-Dependent Properties of TiAl Ohmic Contacts on 4H-SiC
      In: Materials Science Forum 1062 (2022), S. 185-189
      ISSN: 0255-5476
      DOI: 10.4028/p-36s1w4
    • Muthumbi AK.:
      Defect detection in nano-imprint stamps with deep learning and low resolution microscope (Masterarbeit, 2022)
    • Schimmel S., Salamon M., Tomida D., Ishiguro T., Honda Y., Chichibu SF., Amano H.:
      High Energy Computed Tomography as a Tool for Validation of Numerical Simulations of Ammonothermal Crystal Growth of GaN
      8th International Workshop on Crystal Growth Technology (Berlin, 29. Mai 2022 - 2. Juni 2022)
    • Schimmel S., Salamon M., Tomida D., Kobelt I., Heinlein L., Kimmel AC., Steigerwald T., Ishiguro T., Honda Y., Chichibu SF., Amano H., Schlücker E., Wellmann P.:
      In Situ Monitoring Technologies as Prospective Validation Tools for Numerical Simulations of Ammonothermal Crystal Growth
      7th European Conference on Crystal Growth (Paris, 25. Juli 2022 - 27. Juli 2022)
    • Schimmel S., Salamon M., Tomida D., Neumeier S., Ishiguro T., Honda Y., Chichibu SF., Amano H.:
      High-Energy Computed Tomography as a Prospective Tool for In Situ Monitoring of Mass Transfer Processes inside High-Pressure Reactors-A Case Study on Ammonothermal Bulk Crystal Growth of Nitrides including GaN
      In: Materials 15 (2022), S. 6165
      ISSN: 1996-1944
      DOI: 10.3390/ma15176165
    • Schimmel S., Sun W., Dropka N.:
      Artificial Intelligence for Crystal Growth and Characterization
      In: Crystals 12 (2022), S. 1232
      ISSN: 2073-4352
      DOI: 10.3390/cryst12091232
    • Schimmel S., Tomida D., Ishiguro T., Honda Y., Chichibu SF., Amano H.:
      Temperature field and fluid flow in ammonothermal growth of GaN during etch-back and crystal growth for a retrograde solubility configuration
      International Workshop on Nitride Semiconductors (Berlin, 9. Oktober 2022 - 14. Oktober 2022)
    • Sedova V.:
      Modeling of thick photoresist for grayscale lithography application (Masterarbeit, 2022)
    • Seidel L., Schafer S., Oehme M., Buca D., Capellini G., Schulze J., Schwarz D.:
      Electroluminescence of SixGe1-x-ySny / Ge1-ySny pin-Diodes Grown on a GeSn Buffer
      48th IEEE European Solid State Circuits Conference, ESSCIRC 2022 (Milan, ITA, 19. September 2022 - 22. September 2022)
      In: ESSCIRC 2022 - IEEE 48th European Solid State Circuits Conference, Proceedings 2022
      DOI: 10.1109/ESSCIRC55480.2022.9911458
    • Szabo M.:
      Optimierung und Charakterisierung von 2D-Materialien für die Passivierung von schwarzem Phosphor (Masterarbeit, 2022)
    • Wanitzek M., Oehme M., Spieth C., Schwarz D., Seidel L., Schulze J.:
      GeSn-on-Si Avalanche Photodiodes for Short-Wave Infrared Detection
      48th IEEE European Solid State Circuits Conference, ESSCIRC 2022 (Milan, ITA, 19. September 2022 - 22. September 2022)
      In: ESSCIRC 2022 - IEEE 48th European Solid State Circuits Conference, Proceedings 2022
      DOI: 10.1109/ESSCIRC55480.2022.9911363

    2021

    • Awad A., Brendel P., Evanschitzky P., Woldeamanual DS., Rosskopf A., Erdmann A.:
      Accurate prediction of EUV lithographic images and 3D mask effects using generative networks
      In: Journal of Micro-Nanolithography MEMS and MOEMS 20 (2021)
      ISSN: 1932-5150
      DOI: 10.1117/1.JMM.20.4.043201
    • Becker T.:
      Reliability of Silicon-Nitride based High-Voltage Monolithic Capacitors
      (2021)
      DOI: 10.24406/publica-fhg-410867
      (anderer)
    • Fritsch B., Hutzler A., Wu M., Khadivianazar S., Vogl L., Jank MPM., März M., Spiecker E.:
      Accessing local electron-beam induced temperature changes during in situ liquid-phase transmission electron microscopy
      In: Nanoscale Advances 3 (2021), S. 2466 - 2474
      ISSN: 2516-0230
      DOI: 10.1039/D0NA01027H
      URL: https://pubs.rsc.org/en/content/articlelanding/2021/NA/D0NA01027H
    • Fritsch B., Hutzler A., Wu M., Vogl L., Jank MP., März M., Spiecker E.:
      Beam-induced heating at low electron fluxes during liquid phase transmission electron microscopy
      In: Microscopy and Microanalysis 27 (2021), S. 1040-1042
      ISSN: 1431-9276
      DOI: 10.1017/S1431927621003937
    • Fritsch B., Hutzler A., Wu M., Vogl L., Jank MPM., März M., Spiecker E.:
      Evaluating local temperature changes during liquid cell transmission electron microscopy by in situ parallel beam electron diffraction
      Virtual Early Career European Microscopy Congress 2020 (Kopenhagen, 24. November 2020 - 26. November 2020)
      In: Proceedings of the European Microscopy Congress 2020 2021
      DOI: 10.22443/rms.emc2020.253
      URL: https://www.emc2020.eu/abstract/evaluating-local-temperature-changes-during-liquid-cell-transmission-electron-microscopy-by-emin-situnbspemparallel-beam-electron-diffraction.html
    • Geiling J., Steinberger M., Ortner F., Seyfried R., Nuss A., Uhrig F., Lange C., Oschsner R., Wasserscheid P., März M., Preuster P.:
      Combined dynamic operation of PEM fuel cell and continuous dehydrogenation of perhydro-dibenzyltoluene
      In: International Journal of Hydrogen Energy 46 (2021), S. 35662-35677
      ISSN: 0360-3199
      DOI: 10.1016/j.ijhydene.2021.08.034
    • Gerwig M., Ali AS., Neubert D., Polster S., Bohme U., Franze G., Rosenkranz M., Popov A., Ponomarev I., Jank M., Viehweger C., Brendler E., Frey L., Kroll P., Kroke E.:
      From Cyclopentasilane to Thin-Film Transistors
      In: Advanced Electronic Materials 7 (2021), S. 1-13
      ISSN: 2199-160X
      DOI: 10.1002/aelm.202000422
    • Hirsch A., Schulze M., Sturm F., Trempa M., Reimann C., Friedrich J.:
      Factors influencing the gas bubble evolution and the cristobalite formation in quartz glass Cz crucibles for Czochralski growth of silicon crystals
      In: Journal of Crystal Growth 570 (2021)
      ISSN: 0022-0248
      DOI: 10.1016/j.jcrysgro.2021.126231
    • Hutzler A., Fritsch B., Branscheid R., Wu M., Jank M., Spiecker E.:
      Direct Manipulation of Nanostructures Utilizing Donut-Shaped Potential Wells during Liquid-Phase Transmission Electron Microscopy
      Virtual Early Career European Microscopy Congress 2020
      DOI: 10.22443/rms.emc2020.158
    • Johnsson A., Schmidt G., Hauf M., Pichler P.:
      A Review of Platinum Diffusion in Silicon and Its Application for Lifetime Engineering in Power Devices
      In: physica status solidi (a) (2021)
      ISSN: 1862-6300
      DOI: 10.1002/pssa.202100462
    • Lehninger D., Ellinger M., Ali T., Li S., Mertens K., Lederer M., Olivio R., Kämpfe T., Hanisch N., Biedermann K., Rudolph M., Brackmann V., Sanctis S., Jank MP., Seidel K.:
      A Fully Integrated Ferroelectric Thin-Film-Transistor – Influence of Device Scaling on Threshold Voltage Compensation in Displays
      In: Advanced Electronic Materials (2021)
      ISSN: 2199-160X
      DOI: 10.1002/aelm.202100082
    • Meißner E., Besendörfer S., Faraji S., Bahat-Treidel E., Würfl J.:
      The long journey from crystal growth to power devices, the role of materials development for III-Nitride semiconductors
      2021 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2021 (Virtual, Online, 3. Mai 2021 - 7. Mai 2021)
      In: PCIM Europe Conference Proceedings 2021
    • Meißner E., Jockel D., Koch M., Niewa R.:
      A New Perspective on Growth of GaN from the Basic Ammonothermal Regime
      In: Elke Meissner, Rainer Niewa (Hrsg.): Ammonothermal Synthesis and Crystal Growth of Nitrides, Cham: Springer Science and Business Media Deutschland GmbH, 2021, S. 77-103 (Springer Series in Materials Science, Bd.304)
      ISBN: 978-3-030-56305-9

      DOI: 10.1007/978-3-030-56305-9_6
    • Nagy R., Dasari DBR., Babin C., Liu D., Vorobyov V., Niethammer M., Widmann M., Linkewitz T., Gediz I., Stoehr R., Weber HB., Ohshima T., Ghezellou M., Son NT., Ul-Hassan J., Kaiser F., Wrachtrup J.:
      Narrow inhomogeneous distribution of spin-active emitters in silicon carbide
      In: Applied Physics Letters 118 (2021), S. 144003
      ISSN: 0003-6951
      DOI: 10.1063/5.0046563
    • Rafaja D., Fischer P., Barchuk M., Motylenko M., Roeder C., Besendoerfer S., Meißner E.:
      X-Ray diffraction analysis and modeling of the depth profile of lattice strains in AlGaN stacks
      In: Thin Solid Films 732 (2021), Art.Nr.: 138777
      ISSN: 0040-6090
      DOI: 10.1016/j.tsf.2021.138777
    • Rühl M., Lehmeyer J., Nagy R., Weißer M., Bockstedte M., Krieger M., Weber HB.:
      Removing the orientational degeneracy of the TS defect in 4H-SiC by electric fields and strain
      In: New Journal of Physics 23 (2021), Art.Nr.: 073002
      ISSN: 1367-2630
      DOI: 10.1088/1367-2630/abfb3e
      URL: https://iopscience.iop.org/article/10.1088/1367-2630/abfb3e
    • Schimmel S., Tomida D., Ishiguro T., Honda Y., Chichibu SF., Amano H.:
      Numerical simulation of ammonothermal crystal growth of GaN-current state, challenges, and prospects
      In: Crystals 11 (2021), Art.Nr.: 356
      ISSN: 2073-4352
      DOI: 10.3390/cryst11040356
    • Schimmel S., Tomida D., Saito M., Bao Q., Ishiguro T., Honda Y., Chichibu SF., Amano H.:
      Boundary conditions for simulations of fluid flow and temperature field during ammonothermal crystal growth—a machine-learning assisted study of autoclave wall temperature distribution
      In: Crystals 11 (2021), S. 1-27
      ISSN: 2073-4352
      DOI: 10.3390/cryst11030254
    • Schimmel S., Tomida D., Saito M., Bao Q., Ishiguro T., Honda Y., Chichibu SF., Amano H., Wellmann P.:
      Numerical Simulations of Ammonothermal Crystal Growth of GaN and Pathways towards their Experimental Validation
      Seminar of the Young Crystal Growers (DGKK) (Berlin, 5. Oktober 2022 - 6. Oktober 2021)
    • Schlichting H.:
      Impact of Extended Defects on the Yield and Performance of 4H-SiC Power Devices
      5th Sino MOS-AK Workshop (Xi'an, 11. August 2021 - 13. August 2021)
      DOI: 10.5281/zenodo.5642677
    • Schmidt K., Polzinger B., Metry M., Koppe S., Zimmermann A.:
      Hybrid Additive Manufacturing by Embedded Electrical Circuits Using 3-D Dispensing
      In: IEEE Transactions on Components, Packaging and Manufacturing Technology 11 (2021), S. 510-521
      ISSN: 2156-3950
      DOI: 10.1109/TCPMT.2021.3054835
    • Schnick W., Cordes N., Mallmann M., Niewa R., Meißner E.:
      Ammonothermal Materials
      In: Elke Meissner, Rainer Niewa (Hrsg.): Ammonothermal Synthesis and Crystal Growth of Nitrides, Cham: Springer Science and Business Media Deutschland GmbH, 2021, S. 329-336 (Springer Series in Materials Science, Bd.304)
      DOI: 10.1007/978-3-030-56305-9_18
    • Taherkhani M., Fritsch B., Jank MPM., Spiecker E., Hutzler A.:
      Modelling the Radiolysis of Silver Nitrate Solutions in presence of Bromide Ions in Liquid-Phase Transmission Electron Microscopy
      In: Microscopy and Microanalysis 27 (2021), S. 103-104
      ISSN: 1431-9276
      DOI: 10.1017/S1431927621013519
    • Toumi S., Ouennoughi Z., Weiß R.:
      Temperature analysis of the Gaussian distribution modeling the barrier height inhomogeneity in the Tungsten/4H-SiC Schottky diode
      In: Applied Physics A: Materials Science and Processing 127 (2021), Art.Nr.: 661
      ISSN: 0947-8396
      DOI: 10.1007/s00339-021-04787-0
    • Yu Z., Xu T., Letz S., Bayer CF., Schletz A., März M.:
      Automated quantitative analysis of void morphology evolution in Ag[sbnd]Ag direct bonding interface after accelerated aging
      In: Microelectronics Reliability 126 (2021), Art.Nr.: 114285
      ISSN: 0026-2714
      DOI: 10.1016/j.microrel.2021.114285
    • Yu Z., Yu Z., Tan YZ., Bayer CF., Rauh H., Schletz A., März M., Birlem O.:
      Cu-Cu Thermocompression Bonding with Cu-Nanowire Films for Power Semiconductor Die-Attach on DBC Substrates
      23rd IEEE Electronics Packaging Technology Conference, EPTC 2021 (Virtual, Online, SGP, 1. Dezember 2021 - 30. Dezember 2021)
      In: 2021 IEEE 23rd Electronics Packaging Technology Conference, EPTC 2021 2021
      DOI: 10.1109/EPTC53413.2021.9663890

    2020

    • Albrecht M., Klüpfel F., Erlbacher T.:
      An Iterative Surface Potential Algorithm Including Interface Traps for Compact Modeling of SiC-MOSFETs
      In: IEEE Transactions on Electron Devices 67 (2020), S. 855-862
      ISSN: 0018-9383
      DOI: 10.1109/TED.2020.2967507
    • Albrecht M., Pérez D., Martens R., Bauer AJ., Erlbacher T.:
      Impact of channel implantation on a 4h-sic cmos operational amplifier for high temperature applications
      18th International Conference on Silicon Carbide and Related Materials, ICSCRM 2019 (Kyoto, 29. September 2019 - 4. Oktober 2019)
      In: Hiroshi Yano, Takeshi Ohshima, Kazuma Eto, Takeshi Mitani, Shinsuke Harada, Yasunori Tanaka (Hrsg.): Materials Science Forum 2020
      DOI: 10.4028/www.scientific.net/MSF.1004.1123
    • Bejenari I., Burenkov A., Pichler P., Deretzis I., La Magna A.:
      Molecular dynamics modeling of the radial heat transfer from silicon nanowires
      2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020 (, 3. September 2020 - 6. Oktober 2020)
      In: International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020
      DOI: 10.23919/SISPAD49475.2020.9241646
    • Besendörfer S., Meißner E., Medjdoub F., Derluyn J., Friedrich J., Erlbacher T.:
      The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors
      In: Scientific Reports 10 (2020), Art.Nr.: 17252
      ISSN: 2045-2322
      DOI: 10.1038/s41598-020-73977-2
    • Besendörfer S., Meißner E., Tajalli A., Meneghini M., Freitas JA., Derluyn J., Medjdoub F., Meneghesso G., Friedrich J., Erlbacher T.:
      Vertical breakdown of GaN on Si due to V-pits
      In: Journal of Applied Physics 127 (2020), Art.Nr.: 015701
      ISSN: 0021-8979
      DOI: 10.1063/1.5129248
    • Besendörfer S., Meißner E., Zweipfennig T., Yacoub H., Fahle D., Behmenburg H., Kalisch H., Vescan A., Friedrich J., Erlbacher T.:
      Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures
      In: AIP Advances 10 (2020), Art.Nr.: 045028
      ISSN: 2158-3226
      DOI: 10.1063/1.5141905
    • Boettcher N., Erlbacher T.:
      Design Considerations on a Monolithically Integrated, Self Controlled and Regenerative 900 V SiC Circuit Breaker
      2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020 (Suita, 23. September 2020 - 25. September 2020)
      In: 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020 2020
      DOI: 10.1109/WiPDAAsia49671.2020.9360279
    • Di Benedetto L., Licciardo GD., Erlbacher T., Bauer AJ., Rubino A.:
      A 4H-SiC UV Phototransistor with Excellent Optical Gain Based on Controlled Potential Barrier
      In: IEEE Transactions on Electron Devices 67 (2020), S. 154-159
      ISSN: 0018-9383
      DOI: 10.1109/TED.2019.2950986
    • Faraji S., Meißner E., Weingärtner R., Besendörfer S., Friedrich J.:
      In-situ preparation of gan sacrificial layers on sapphire substrate in movpe reactor for self-separation of the overgrown gan crystal
      In: Crystals 10 (2020), S. 1-11
      ISSN: 2073-4352
      DOI: 10.3390/cryst10121100
    • Hellinger C., Rusch O., Rommel M., Bauer AJ., Erlbacher T.:
      Low-resistance ohmic contact formation by laser annealing of N-implanted 4H-SiC
      In: Hiroshi Yano, Takeshi Ohshima, Kazuma Eto, Takeshi Mitani, Shinsuke Harada, Yasunori Tanaka (Hrsg.): Materials Science Forum 2020
      DOI: 10.4028/www.scientific.net/MSF.1004.718
    • Hessler S., Knopf S., Rommel M., Girschikofsky M., Schmauß B., Hellmann R.:
      Advancing the sensitivity of integrated epoxy-based Bragg grating refractometry by high-index nanolayers
      In: Optics Letters 45 (2020), S. 5510-5513
      ISSN: 0146-9592
      DOI: 10.1364/OL.402768
    • Hutzler A., Fritsch B., Matthus C., Jank MPM., Rommel M.:
      Highly Accurate Determination of Heterogeneously Stacked Van-der-Waals Materials by Optical Microspectroscopy
      In: Scientific Reports 10 (2020), Art.Nr.: 13676
      ISSN: 2045-2322
      DOI: 10.1038/s41598-020-70580-3
      URL: https://www.nature.com/articles/s41598-020-70580-3
    • Kazantsev D., Ryssel H.:
      ASNOM mapping of SiC epilayer doping profile and of surface phonon polariton waveguiding
      In: Journal of Applied Physics 127 (2020)
      ISSN: 0021-8979
      DOI: 10.1063/1.5128104
    • Kocher M., Schlichting H., Kallinger B., Rommel M., Bauer AJ., Erlbacher T.:
      Influence of shallow pits and device design of 4H-SiC VDMOS transistors on in-line defect analysis by photoluminescence and differential interference contrast mapping
      18th International Conference on Silicon Carbide and Related Materials, ICSCRM 2019 (Kyoto, 29. September 2019 - 4. Oktober 2019)
      In: Hiroshi Yano, Takeshi Ohshima, Kazuma Eto, Takeshi Mitani, Shinsuke Harada, Yasunori Tanaka (Hrsg.): Materials Science Forum 2020
      DOI: 10.4028/www.scientific.net/MSF.1004.299
    • Morioka N., Babin C., Nagy R., Gediz I., Hesselmeier E., Liu D., Joliffe M., Niethammer M., Dasari D., Vorobyov V., Kolesov R., Stoehr R., Ul-Hassan J., Nguyen Tien Son ., Ohshima T., Udvarhelyi P., Thiering G., Gali A., Wrachtrup J., Kaiser F.:
      Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide
      In: Nature Communications 11 (2020), Art.Nr.: 2516
      ISSN: 2041-1723
      DOI: 10.1038/s41467-020-16330-5
    • Rickert L., Fritsch B., Kors A., Reithmaier JP., Benyoucef M.:
      Mode properties of telecom wavelength InP-based high-(Q/V) L4/3 photonic crystal cavities
      In: Nanotechnology 31 (2020), Art.Nr.: 315703
      ISSN: 1361-6528
      DOI: 10.1088/1361-6528/ab8a8c
      URL: https://iopscience.iop.org/article/10.1088/1361-6528/ab8a8c
    • Rusch O., Hellinger C., Moult J., Corcoran Y., Erlbacher T.:
      Reducing on-resistance for SiC diodes by thin wafer and laser anneal technology
      18th International Conference on Silicon Carbide and Related Materials, ICSCRM 2019 (Kyoto, 29. September 2019 - 4. Oktober 2019)
      In: Hiroshi Yano, Takeshi Ohshima, Kazuma Eto, Takeshi Mitani, Shinsuke Harada, Yasunori Tanaka (Hrsg.): Materials Science Forum 2020
      DOI: 10.4028/www.scientific.net/MSF.1004.155
    • Toumi S., Ouennoughi Z., Murakami K.:
      Effect of temperature on the Fowler-Nordheim barrier height, flat band potentials and electron/hole effective masses in the MOS capacitors
      In: Physica B-Condensed Matter 585 (2020), Art.Nr.: 412125
      ISSN: 0921-4526
      DOI: 10.1016/j.physb.2020.412125
    • Wankerl H., Stern M., Altieri-Weimar P., Al-Baddai S., Lang KJ., Roider F., Lang EW.:
      Fully convolutional networks for void segmentation in X-ray images of solder joints
      In: Journal of Manufacturing Processes 57 (2020), S. 762-767
      ISSN: 1526-6125
      DOI: 10.1016/j.jmapro.2020.07.021
    • Weiße J., Matthus C., Schlichting H., Mitlehner H., Erlbacher T.:
      RESURF n-LDMOS Transistor for Advanced Integrated Circuits in 4H-SiC
      In: IEEE Transactions on Electron Devices 67 (2020), S. 3278-3284
      ISSN: 0018-9383
      DOI: 10.1109/TED.2020.3002730
    • Wicht T., Mueller S., Weingaertner R., Epelbaum B., Besendoerfer S., Blaess U., Weißer M., Unruh T., Meißner E.:
      X-ray characterization of physical-vapor-transport-grown bulk AlN single crystals
      In: Journal of Applied Crystallography 53 (2020), S. 1080-1086
      ISSN: 0021-8898
      DOI: 10.1107/S1600576720008961
    • Yu Z., Zeng W., Zhao D., Zhang Z., Bayer CF., Schletz A., März M.:
      Reliability of silver direct bonding in thermal cycling tests
      8th IEEE Electronics System-Integration Technology Conference, ESTC 2020 (Tonsberg, Vestfold, 15. September 2020 - 18. September 2020)
      In: Proceedings - 2020 IEEE 8th Electronics System-Integration Technology Conference, ESTC 2020 2020
      DOI: 10.1109/ESTC48849.2020.9229753
    • Zhao D., Letz S., Schletz A., März M.:
      A Method for the Characterization of Adhesion Strength Degradation of Thin Films on Si-Substrate under thermal cycling test
      2020 CIPS (Berlin, 24. März 2020 - 26. März 2020)
    • Zhao D., Letz S., Yu Z., Schletz A., März M.:
      Combined experimental and numerical approach for investigating the mechanical degradation of the interface between thin film metallization and Si-substrate after temperature cycling test
      In: Microelectronics Reliability (2020)
      ISSN: 0026-2714
      DOI: 10.1016/j.microrel.2020.113785
    • Zhao Y., Miao P., Elia J., Hu H., Wang X., Heumüller T., Hou Y., Matt G., Osvet A., Chen YT., Tarragó M., de Ligny D., Przybilla T., Denninger P., Will J., Zhang J., Tang X., Li N., He C., Pan A., Meixner AJ., Spiecker E., Zhang D., Brabec C.:
      Strain-activated light-induced halide segregation in mixed-halide perovskite solids
      In: Nature Communications 11 (2020), Art.Nr.: 6328
      ISSN: 2041-1723
      DOI: 10.1038/s41467-020-20066-7
    • Zimmermann V., Zörner A., Chen W., Yu Z., Jank M., Bayer C., Schletz A., März M.:
      Integration of printed electronics with potted power electronic modules
      11th International Conference on Integrated Power Electronics Systems, CIPS 2020 (Berlin, 24. März 2020 - 26. März 2020)
      In: CIPS 2020 - 11th International Conference on Integrated Power Electronics Systems 2020

    2019

    • Albrecht M., Erlbacher T., Bauer A., Frey L.:
      Improving 5V digital 4H-SIC CMOS ics for operating at 400°C using PMOS channel implantation
      In: Materials Science Forum (2019), S. 827-831
      ISSN: 0255-5476
      DOI: 10.4028/www.scientific.net/MSF.963.827
    • Beljakowa S., Pichler P., Kalkofen B., Hübner R.:
      Diffusion of Phosphorus and Boron from Atomic Layer Deposition Oxides into Silicon
      In: physica status solidi (a) 216 (2019), Art.Nr.: 1900306
      ISSN: 1862-6300
      DOI: 10.1002/pssa.201900306
    • Boettcher N., Heckel T., Erlbacher T., Pelaic K.:
      Silicon RC-Snubber for 900 V Applications Utilising non-Stoichiometric Silicon Nitride
      31st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) (Shanghai, 19. Mai 2019 - 23. Mai 2019)
      In: 31st International Symposium on Power Semiconductor Devices & ICs, NEW YORK: 2019
      DOI: 10.1109/ISPSD.2019.8757589
    • Chen YC., Salter PS., Niethammer M., Widmann M., Kaiser F., Nagy R., Morioka N., Babin C., Erlekampf J., Berwian P., Booth MJ., Wrachtrup J.:
      Laser Writing of Scalable Single Color Centers in Silicon Carbide
      In: Nano Letters 19 (2019), S. 2377-2383
      ISSN: 1530-6984
      DOI: 10.1021/acs.nanolett.8b05070
    • Di Benedetto L., Matthus C., Erlbacher T., Bauer AJ., Licciardo GD., Rubino A., Frey L.:
      Performance of 4H-SIC bipolar diodes as temperature sensor at low temperatures
      12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018 (Birmingham, 2. September 2018 - 6. September 2018)
      In: Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (Hrsg.): Materials Science Forum 2019
      DOI: 10.4028/www.scientific.net/MSF.963.572
    • Erdmann A., Evanschitzky P., Mesilhy HMS., Philipsen V., Hendrickx E., Bauer M.:
      Attenuated phase shift mask for extreme ultraviolet: Can they mitigate three-dimensional mask effects?
      In: Journal of Micro-Nanolithography MEMS and MOEMS 18 (2019), Art.Nr.: 011005
      ISSN: 1932-5150
      DOI: 10.1117/1.JMM.18.1.011005
    • Erlekampf J., Kallinger B., Weiße J., Rommel M., Berwian P., Friedrich J., Erlbacher T.:
      Deeper insight into lifetime-engineering in 4H-SiC by ion implantation
      In: Journal of Applied Physics 126 (2019), Art.Nr.: 045701
      ISSN: 0021-8979
      DOI: 10.1063/1.5092429
    • Fedorova N., Macher P., Jovicic V., Zbogar-Rasic A., Delgado A.:
      Experimental investigation of the gravity influence on the condensation behaviour on Al and PTFE-samples
      27. GALA-Fachtagung "Experimentelle Strömungsmechanik" (Erlangen, 3. September 2019 - 5. September 2019)
      In: A. Delgado, B. Gatternig, M. Münsch, B. Ruck, A. Leder (Hrsg.): Proceedings der 27. GALA-Fachtagung "Experimentelle Strömungsmechanik" 2019
    • Grünler S., Rattmann G., Erlbacher T., Bauer AJ., Krach F., Frey L.:
      Towards highly integrated, automotive power SoCs using capacitors operating at 100 V implemented in TSV
      9th International Conference on Integrated Power Electronics Systems, CIPS 2016 (Nuremberg, DEU, 8. März 2016 - 10. März 2016)
      In: CIPS 2016 - 9th International Conference on Integrated Power Electronics Systems 2019
    • Hutzler A., Fritsch B., Jank M., Branscheid R., Martens C., Spiecker E., März M.:
      Nanoparticles: In Situ Liquid Cell TEM Studies on Etching and Growth Mechanisms of Gold Nanoparticles at a Solid–Liquid–Gas Interface
      In: Advanced Materials Interfaces 6 (2019), S. 1970126
      ISSN: 2196-7350
      DOI: 10.1002/admi.201970126
    • Hutzler A., Fritsch B., Jank M., Branscheid R., Martens R., Spiecker E., März M.:
      In Situ Liquid Cell TEM Studies on Etching and Growth Mechanisms of Gold Nanoparticles at a Solid-Liquid-Gas Interface
      In: Advanced Materials Interfaces 6 (2019), Art.Nr.: 1901027
      ISSN: 2196-7350
      DOI: 10.1002/admi.201901027
      URL: https://www.onlinelibrary.wiley.com/doi/10.1002/admi.201901027
    • Hutzler A., Fritsch B., Jank MPM., Branscheid R., Spiecker E., März M.:
      Preparation of Graphene-Supported Microwell Liquid Cells for In Situ Transmission Electron Microscopy
      In: Journal of Visualized Experiments (2019), Art.Nr.: e59751
      ISSN: 1940-087X
      DOI: 10.3791/59751
      URL: https://www.jove.com/video/59751/preparation-graphene-supported-microwell-liquid-cells-for-situ?status=a61757k
    • Hutzler A., Matthus C., Dolle C., Rommel M., Jank MPM., Spiecker E., Frey L.:
      Large-Area Layer Counting of Two-Dimensional Materials Evaluating the Wavelength Shift in Visible-Reflectance Spectroscopy
      In: Journal of Physical Chemistry C 123 (2019), S. 9192 - 9201
      ISSN: 1932-7447
      DOI: 10.1021/acs.jpcc.9b00957
      URL: https://pubs.acs.org/doi/10.1021/acs.jpcc.9b00957
    • Kocher M., Yao B., Weiße J., Rommel M., Xu ZW., Erlbacher T., Bauer A.:
      Determination of compensation ratios of al-implanted 4H-SIC by tcad modelling of TLM measurements
      12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018 (Birmingham, 2. September 2018 - 6. September 2018)
      In: Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (Hrsg.): Materials Science Forum 2019
      DOI: 10.4028/www.scientific.net/MSF.963.445
    • Matlok S., Boettcher N., Jahn M., Hörauf P., Erlbacher T., Eckardt B.:
      Retrofitting Wide Band Gap Devices to classic Power Modules using Silicon RC Snubbers
      2019 PCIM Europe (Nürnberg, 7. Mai 2019 - 9. Mai 2019)
      URL: https://www.researchgate.net/publication/331642497_Retrofitting_Wide_Band_Gap_Devices_to_classic_Power_Modules_using_Silicon_RC_Snubbers
    • Matthus CD., Bauer AJ., Frey L., Erlbacher T.:
      Wavelength-selective 4H-SiC UV-sensor array
      In: Materials Science in Semiconductor Processing 90 (2019), S. 205-211
      ISSN: 1369-8001
      DOI: 10.1016/j.mssp.2018.10.019
    • Matthus CD., Di Benedetto L., Kocher M., Bauer AJ., Licciardo GD., Rubino A., Erlbacher T.:
      Feasibility of 4H-SiC p-i-n Diode for Sensitive Temperature Measurements Between 20.5 K and 802 K
      In: IEEE Sensors Journal 19 (2019), S. 2871-2878
      ISSN: 1530-437X
      DOI: 10.1109/JSEN.2019.2891293
    • Pichler P., Sledziewski T., Häublein V., Bauer AJ., Erlbacher T.:
      Channeling in 4H-SiC from an application point of view
      12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018 (Birmingham, 2. September 2018 - 6. September 2018)
      In: Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (Hrsg.): Materials Science Forum 2019
      DOI: 10.4028/www.scientific.net/MSF.963.386
    • Rattmann G., Pichler P., Erlbacher T.:
      On a Novel Source Technology for Deep Aluminum Diffusion for Silicon Power Electronics
      In: physica status solidi (a) 216 (2019), Art.Nr.: 1900167
      ISSN: 1862-6300
      DOI: 10.1002/pssa.201900167
    • Rusch O., Moult J., Erlbacher T.:
      Influence of trench design on the electrical properties of 650v 4H-SIC JBS diodes
      12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018 (Birmingham, 2. September 2018 - 6. September 2018)
      In: Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (Hrsg.): Materials Science Forum 2019
      DOI: 10.4028/www.scientific.net/MSF.963.549
    • Schlichting H., Sledziewski T., Bauer A., Erlbacher T.:
      Design Considerations for Robust Manufacturing and High Yield of 1.2 kV 4H-SiC VDMOS Transistors
      In: Materials Science Forum 963 (2019), S. 763-767
      ISSN: 0255-5476
      DOI: 10.4028/www.scientific.net/MSF.963.763
    • Schlichting H., Sledziewski T., Bauer AJ., Erlbacher T.:
      Design considerations for robust manufacturing and high yield of 1.2 kv 4H-SIC VDMOS transistors
      12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018 (Birmingham, 2. September 2018 - 6. September 2018)
      In: Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (Hrsg.): Materials Science Forum 2019
      DOI: 10.4028/www.scientific.net/MSF.963.763
    • Schriefer T., Hofmann M.:
      A hybrid frequency-time-domain approach to determine the vibration fatigue life of electronic devices
      In: Microelectronics Reliability 98 (2019), S. 86-94
      ISSN: 0026-2714
      DOI: 10.1016/j.microrel.2019.04.001
    • Schriefer T., Hofmann M., Rauh H., Eckardt B., März M.:
      Parameter study on the electrical contact resistance of axially canted coil springs for high-current systems
      2018 29th International Conference on Electrical Contacts together with 64th IEEE Holm Conference on Electrical Contacts (Albuquerque, NM, 14. Oktober 2018 - 18. Oktober 2018)
      DOI: 10.1109/HOLM.2018.8611640
    • Stolzke T., Dirnecker T., Schwarz J., Frey L.:
      Investigation of magnetic properties from a manganese-zinc-ferrite polymer bonded material
      In: International Journal of Applied Electromagnetics and Mechanics 59 (2019), S. 97-104
      ISSN: 1383-5416
      DOI: 10.3233/JAE-171244
    • Stolzke T., Ehrlich S., Joffe C., März M.:
      Comprehensive accuracy examination of electrical power loss measurements of inductive components for frequencies up to 1 MHz
      In: Journal of Magnetism and Magnetic Materials 497 (2019), Art.Nr.: 166022
      ISSN: 0304-8853
      DOI: 10.1016/j.jmmm.2019.166022
    • Udvarhelyi P., Nagy R., Kaiser F., Lee SY., Wrachtrup J., Gali A.:
      Spectrally Stable Defect Qubits with no Inversion Symmetry for Robust Spin-To-Photon Interface
      In: Physical Review Applied 11 (2019), Art.Nr.: 044022
      ISSN: 2331-7019
      DOI: 10.1103/PhysRevApplied.11.044022
    • Weiße J., Hauck M., Krieger M., Bauer A., Erlbacher T.:
      Aluminum acceptor activation and charge compensation in implanted p-type 4H-SiC
      In: AIP Advances 9 (2019), S. 055308
      ISSN: 2158-3226
      DOI: 10.1063/1.5096440
    • Weiße J., Hauck M., Krieger M., Bauer AJ., Erlbacher T.:
      Publisher's Note: Aluminum acceptor activation and charge compensation in implanted p-type 4H-SiC (AIP Advances (2019) 9 (055308) DOI: 10.1063/1.5096440)
      In: AIP Advances 9 (2019), Art.Nr.: 079901
      ISSN: 2158-3226
      DOI: 10.1063/1.5118666
    • Weiße J., Hauck M., Sledziewski T., Krieger M., Bauer A., Mitlehner H., Frey L., Erlbacher T.:
      On the origin of charge compensation in aluminum-implanted n-type 4H-SiC by analysis of hall effect measurements
      12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018 (Birmingham, 2. September 2018 - 6. September 2018)
      In: Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (Hrsg.): Materials Science Forum 2019
      DOI: 10.4028/www.scientific.net/MSF.963.433
    • Weiße J., Mitlehner H., Frey L., Erlbacher T.:
      Design of a 4H-SIC resurf N-LDMOS transistor for high voltage integrated circuits
      12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018 (Birmingham, 2. September 2018 - 6. September 2018)
      In: Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (Hrsg.): Materials Science Forum 2019
      DOI: 10.4028/www.scientific.net/MSF.963.629
    • Śledziewski T., Erlbacher T., Bauer A., Frey L., Chen X., Zhao Y., Li C., Dai X.:
      Comparison between NI-SALICIDE and self-aligned lift-off used in fabrication of ohmic contacts for sic power MOSFET
      12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018 (Birmingham, 2. September 2018 - 6. September 2018)
      In: Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (Hrsg.): Materials Science Forum 2019
      DOI: 10.4028/www.scientific.net/MSF.963.490

    2018

    • Bilbao-Guillerna A., Thiruvallur Eachambadi R., Cadot GBJ., Axinte DA., Billingham J., Stumpf F., Stumpf F., Beuer S., Rommel M.:
      Novel Approach Based on Continuous Trench Modelling to Predict Focused Ion Beam Prepared Freeform Surfaces
      In: Journal of Materials Processing Technology (2018)
      ISSN: 0924-0136
      DOI: 10.1016/j.jmatprotec.2017.10.024
    • Distler F., Oppelt D., Schür J., Vossiek M.:
      Design and characterization of a compact and robust shielded dielectric waveguide for mmW applications
      In: Proceedings of the GeMiC 2018 - The 11th German Microwave Conference (GeMiC 2018) 2018
      DOI: 10.23919/gemic.2018.8335108
    • Erlbacher T., Huerner A., Zhu Y., Bach L., Schletz A., Zuerbig V., Pinti L., Kirste L., Giese C., Nebel CE., Bauer AJ., Frey L.:
      Electrical properties of schottky-diodes based on B doped diamond
      International Conference on Silicon Carbide and Related Materials, ICSCRM 2017
      DOI: 10.4028/www.scientific.net/MSF.924.931
    • Erlekampf J., Kaminzky D., Rosshirt K., Kallinger B., Rommel M., Berwian P., Friedrich J., Frey L.:
      Influence and mutual interaction of process parameters on the Z1/2defect concentration during epitaxy of 4H-SiC
      International Conference on Silicon Carbide and Related Materials, ICSCRM 2017
      DOI: 10.4028/www.scientific.net/MSF.924.112
    • Förthner M., Girschikofsky M., Rumler M., Stumpf F., Rommel M., Hellmann R., Frey L.:
      One-step nanoimprinted Bragg grating sensor based on hybrid polymers
      In: Sensors and Actuators A-Physical 283 (2018), S. 298-304
      ISSN: 0924-4247
      DOI: 10.1016/j.sna.2018.09.053
    • Girschikofsky MG., Rosenberger M., Förthner M., Rommel M., Frey L., Hellmann R.:
      Flexible thin film bending sensor based on Bragg gratings in hybrid polymers
      Optical Sensing and Detection V 2018
      DOI: 10.1117/12.2303820
    • Huerner A., Heckel T., Endruschat A., Erlbacher T., Bauer AJ., Frey L.:
      Analytical model for the influence of the gate-voltage on the forward conduction properties of the body-diode in SiC-MOSFETs
      International Conference on Silicon Carbide and Related Materials, ICSCRM 2017
      DOI: 10.4028/www.scientific.net/MSF.924.901
    • Hutzler A.:
      Development of advanced liquid cell architectures for high performance in situ transmission electron microscopy in materials sciences (Dissertation, 2018)
      URL: https://opus4.kobv.de/opus4-fau/frontdoor/index/index/docId/10092
    • Hutzler A., Matthus C., Rommel M., Jank M., Frey L.:
      Large-Area Layer Counting of 2D Materials via Visible Reflection Spectroscopy
      19th International Microscopy Congress (IMC19) (Sydney, 9. September 2018 - 14. September 2018)
      URL: https://abstracts.imc19.com/pdf/abstract_497.pdf
    • Hutzler A., Schmutzler T., Jank MPM., Branscheid R., Unruh T., Spiecker E., Frey L.:
      Unravelling the Mechanisms of Gold−Silver Core−Shell Nanostructure Formation by in Situ TEM Using an Advanced Liquid Cell Design
      In: Nano Letters 18 (2018), S. 7222 - 7229
      ISSN: 1530-6984
      DOI: 10.1021/acs.nanolett.8b03388
      URL: https://pubs.acs.org/doi/10.1021/acs.nanolett.8b03388
    • Kalkofen B., Ahmed B., Beljakowa S., Lisker M., Kim YS., Burte EP.:
      Atomic layer deposition of phosphorus oxide films as solid sources for doping of semiconductor structures
      18th IEEE International Conference on Nanotechnology (IEEE-NANO) (Cork, 23. Juli 2018 - 26. Juli 2018)
      In: 2018 IEEE 18TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO), NEW YORK: 2018
      DOI: 10.1109/nano.2018.8626235
    • Lomakin K., Pavlenko T., Ankenbrand M., Sippel M., Ringel J., Scheetz M., Klemm T., Gräf D., Helmreich K., Franke J., Gold G.:
      Evaluation and Characterization of 3D Printed Pyramid Horn Antennas utilizing different Deposition Techniques for Conductive Material
      In: IEEE Transactions on Components, Packaging and Manufacturing Technology (2018), S. 1-1
      ISSN: 2156-3950
      DOI: 10.1109/tcpmt.2018.2871931
    • Matthus C., Hürner A., Erlbacher T., Bauer AJ., Frey L.:
      Evidence of low injection efficiency for implanted p-emitters in bipolar 4H-SiC high-voltage diodes
      In: Solid-State Electronics (2018), S. 101-105
      ISSN: 0038-1101
      DOI: 10.1016/j.sse.2018.03.010
    • Nagy R., Widmann M., Niethammer M., Dasari DBR., Gerhardt I., Soykal OO., Radulaski M., Ohshima T., Vuckovic J., Nguyen Tien Son ., Ivanov IG., Economou SE., Bonato C., Lee SY., Wrachtrup J.:
      Quantum Properties of Dichroic Silicon Vacancies in Silicon Carbide
      In: Physical Review Applied 9 (2018), Art.Nr.: 034022
      ISSN: 2331-7019
      DOI: 10.1103/PhysRevApplied.9.034022
    • Nouibat TH., Messai Z., Chikouch D., Ouennoughi Z., Rouag N., Rommel M., Frey L.:
      Normalized differential conductance to study current conduction mechanisms in MOS structures
      In: Microelectronics Reliability 91 (2018), S. 183-187
      ISSN: 0026-2714
      DOI: 10.1016/j.microrel.2018.10.001
    • Rosenberger M., Girschikofsky M., Förthner M., Belle S., Rommel M., Frey L., Schmauß B., Hellmann R.:
      TiO2 surface functionalization of COC based planar waveguide Bragg gratings for refractive index sensing
      In: Journal of Optics 20 (2018), Art.Nr.: 01LT02
      ISSN: 2040-8978
      DOI: 10.1088/2040-8986/aa9bcf
    • Scharin-Mehlmann M., Häring A., Rommel M., Dirnecker T., Friedrich O., Frey L., Gilbert D.:
      Nano- and micro-patterned S-, H-, and X-PDMS for cell-based applications: Comparison of wettability, roughness, and cell-derived parameters
      In: Frontiers in Bioengineering and Biotechnology 6 (2018), Art.Nr.: 51
      ISSN: 2296-4185
      DOI: 10.3389/fbioe.2018.00051
    • Schneidereit D., Tschernich J., Friedrich O., Scharin-Mehlmann M., Gilbert D.:
      3D-Printed Reusable Cell Culture Chamber with Integrated Electrodes for Electrical Stimulation and Parallel Microscopic Evaluation
      In: 3D Printing and Additive Manufacturing 5 (2018), S. 115-125
      ISSN: 2329-7662
      DOI: 10.1089/3dp.2017.0103
    • Schriefer T., Hofmann M.:
      Assessing the vibrational response and robustness of electronic systems by dissolving time and length scale
      19th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) (Toulouse, 15. April 2018 - 18. April 2018)
      DOI: 10.1109/EuroSimE.2018.8369868
      URL: https://ieeexplore.ieee.org/document/8369868
    • Schriefer T., Hofmann M., März M.:
      Vibrational resistance investigation of an IGBT gate driver utilizing Frequency Response Analysis (FRA) and Highly Accelerated Life Test (HALT)
      2018 10th International Conference on Integrated Power Electronics Systems (CIPS) (Stuttgart, 20. März 2018 - 22. März 2018)
      URL: https://ieeexplore.ieee.org/document/8403138
    • Schrüfer D., Ellinger M., Jank M., Frey L., Weigel R., Hagelauer AM.:
      Circuits with Scaled Metal Oxide Technology for Future TOLAE RF Systems
      European Microwave Conference (Madrid, 23. September 2018 - 28. September 2018)
      In: Proceedings of the 48th European Microwave Conference 2018
    • Steinberger M., Geiling J., Oechsner R., Frey L.:
      Anode recirculation and purge strategies for PEM fuel cell operation with diluted hydrogen feed gas
      In: Applied Energy 232 (2018), S. 572-582
      ISSN: 0306-2619
      DOI: 10.1016/j.apenergy.2018.10.004
    • Stolzke T., Dirnecker T., Schwarz J., Frey L.:
      Investigation of magnetic properties from a manganese–zinc–ferrite polymer bonded material
      In: International Journal of Applied Electromagnetics and Mechanics Pre-press (2018), S. 1-8
      ISSN: 1383-5416
      DOI: 10.3233/JAE-171244
    • Unterreitmeier M., Nagler O., Pfitzner L., Weigel R., Holmer R.:
      An acoustic emmission sensor system for thin layer crack detection
      29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (Aalborg, 1. Oktober 2018 - 5. Oktober 2018)
      DOI: 10.1016/j.microrel.2018.07.015
    • Weiße J., Hauck M., Sledziewski T., Tschiesche M., Krieger M., Bauer A., Mitlehner H., Frey L., Erlbacher T.:
      Analysis of Compensation Effects in Aluminum-Implanted 4H-SiC Devices
      In: Materials Science Forum 924 (2018), S. 184-187
      ISSN: 0255-5476
      DOI: 10.4028/www.scientific.net/MSF.924.184
    • Yu Z., Zeltner S., Boettcher N., Rattmann G., Leib J., Bayer C., Schletz A., Erlbacher T., Frey L.:
      Heterogeneous Integration of Vertical GaN Power Transistor on Si Capacitor for DC-DC Converters
      7th Electronic System-Integration Technology Conference, ESTC 2018
      DOI: 10.1109/ESTC.2018.8546362
    • Zörner A., Oertel S., Jank M., Frey L., Langenstein B., Bertsch T.:
      Human Sweat Analysis Using a Portable Device Based on a Screen-printed Electrolyte Sensor
      In: Electroanalysis 30 (2018), S. 665-671
      ISSN: 1040-0397
      DOI: 10.1002/elan.201700672

    2017

    • Albrecht M., Hürner A., Erlbacher T., Bauer A., Frey L.:
      Experimental verification of a self-triggered solid-state circuit breaker based on a SiC BIFET
      In: Materials Science Forum 897 (2017), S. 665-668
      ISSN: 0255-5476
      DOI: 10.4028/www.scientific.net/MSF.897.665
    • Banzhaf S., Kenntner J., Grieb M., Schwaiger S., Erlbacher T., Bauer AJ., Frey L.:
      Stress reduction in high voltage MIS capacitor fabrication
      19th International Symposium on Power Electronics, Ee 2017
      DOI: 10.1109/PEE.2017.8171664
    • Förthner M., Papenheim M., Rumler M., Stumpf F., Baier L., Rommel M., Scheer HC., Frey L.:
      Polymerization related deformations in multilayer soft stamps for nanoimprint
      In: Journal of Applied Physics 122 (2017), Art.Nr.: 165305
      ISSN: 0021-8979
      DOI: 10.1063/1.5001463
    • Girschikofsky MG., Förthner M., Rommel M., Frey L., Hellmann R.:
      Fabrication of Bragg grating sensors in UV-NIL structured Ormocer waveguides
      Integrated Optics: Devices, Materials, and Technologies XXI 2017
      DOI: 10.1117/12.2249665
    • Girschikofsky MG., Rosenberger M., Förthner M., Rommel M., Frey L., Hellmann R.:
      Waveguide Bragg Gratings in Ormocer®s for Temperature Sensing
      In: Sensors 17 (2017), Art.Nr.: 2459
      ISSN: 1424-8220
      DOI: 10.3390/s17112459
    • Hutzler A., Branscheid R., Schmutzler T., Jank M., Frey L., Spiecker E.:
      Controlled silver-shell growth on gold nanorods studied by in situ liquid cell TEM techniques
      Microscopy Conference 2017 (Lausanne, 21. August 2017 - 25. August 2017)
      In: Microscopy Conference 2017 (MC 2017) - Proceedings 2017
      URL: https://epub.uni-regensburg.de/36099/
    • Hutzler A., Matthus C., Rommel M., Frey L.:
      Generalized approach to design multi-layer stacks for enhanced optical detectability of ultrathin layers
      In: Applied Physics Letters 110 (2017), Art.Nr.: 021909
      ISSN: 0003-6951
      DOI: 10.1063/1.4973968
    • Häublein V., Birnbaum E., Ryssel H., Frey L., Djupmyr M.:
      Ion Implantation of Polypropylene Films for the Manufacture of Thin Film Capacitors
      21st International Conference on Ion Implantation Technology, IIT 2016
      DOI: 10.1109/IIT.2016.7882887
    • Hürner A., Erlbacher T., Bauer A., Frey L.:
      Monolithically integrated solid-state-circuit-breaker for high power applications
      11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016
      DOI: 10.4028/www.scientific.net/MSF.897.661
    • Matthus C., Burenkov A., Erlbacher T.:
      Optimization of 4H-SiC photodiodes as selective UV sensors
      In: Materials Science Forum (2017), S. 622-625
      ISSN: 0255-5476
      DOI: 10.4028/www.scientific.net/MSF.897.622
    • Matthus C., Erlbacher T., Hess A., Bauer AJ., Frey L.:
      Advanced 4H-SiC p-i-n Diode as Highly Sensitive High-Temperature Sensor Up To 460 °C
      In: IEEE Transactions on Electron Devices 64 (2017), S. 3399-3404
      ISSN: 0018-9383
      DOI: 10.1109/TED.2017.2711271
    • Matthus C., Erlbacher T., Schöfer B., Bauer A., Frey L.:
      Implementation of 4H-SiC PiN-diodes as nearly linear temperature sensors up to 800 K towards SiC multi-sensor integration
      In: Materials Science Forum (2017), S. 618-621
      ISSN: 0255-5476
      DOI: 10.4028/www.scientific.net/MSF.897.618
    • Meister T., Ellinger F., Bartha JW., Berroth M., Burghartz J., Claus M., Frey L., Gagliardi A., Grundmann M., Hesselbarth J., Klauk H., Leo K., Lugli P., Mannsfeld S., Manoli Y., Negra R., Neumaier D., Pfeiffer U., Riedl T., Scheinert S., Scherf U., Thiede A., Tröster G., Vossiek M., Weigel R., Wenger C., Alavi G., Becherer M., Chavarin CA., Darwish M., Ellinger M., Fan CY., Fritsch M., Grotjahn F., Gunia M., Haase K., Hillger P., Ishida K., Jank M., Knobelspies S., Kuhl M., Lupina G., Naghadeh SM., Münzenrieder N., Özbek S., Rasteh M., Salvatore GA., Schrüfer D., Strobel C., Theisen M., Tuckmantel C., Von Wenckstern H., Wang Z., Zhang Z.:
      Program FFlexCom - High frequency flexible bendable electronics for wireless communication systems
      In: 2017 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS) 2017
      DOI: 10.1109/COMCAS.2017.8244733
    • Rosenberger M., Roth G-., Adelmann B., Schmauß B., Hellmann R.:
      Temperature Referenced Planar Bragg Grating Strain Sensor in fs-Laser Cut COC Specimen
      In: IEEE Photonics Technology Letters (2017)
      ISSN: 1041-1135
      DOI: 10.1109/LPT.2017.2693401
    • Schimmel S., Koch M., Macher P., Kimmel AC., Steigerwald T., Alt N., Schlücker E., Wellmann P.:
      Solubility and dissolution kinetics of GaN in supercritical ammonia in presence of ammonoacidic and ammonobasic mineralizers
      In: Journal of Crystal Growth 479 (2017), S. 59-66
      ISSN: 0022-0248
      DOI: 10.1016/j.jcrysgro.2017.09.027
    • Schimmel S., Meisel M., Hertweck B., Steigerwald T., Nebel C., Alt N., Schlücker E., Wellmann P.:
      Chemical stability of carbon-based inorganic construction materials for in situ x-ray measurements of ammonothermal crystal growth of nitrides
      5th German-Swiss Conference on Crystal Growth (Freiburg, 8. März 2017 - 10. März 2017)
    • Steinberg C., Rumler M., Manuel RA., Papenheim M., Wang S., Mayer A., Becker M., Rommel M., Scheer HC.:
      Complex 3D structures via double imprint of hybrid structures and sacrificial mould techniques
      In: Microelectronic Engineering 176 (2017), S. 22-27
      ISSN: 0167-9317
      DOI: 10.1016/j.mee.2017.01.009

    2016

    • Albrecht M., Erlbacher T., Bauer A., Frey L.:
      Potential of 4H-SiC CMOS for high temperature applications using advanced lateral p-MOSFETs
      In: Materials Science Forum 858 (2016), S. 821-824
      ISSN: 0255-5476
      DOI: 10.4028/www.scientific.net/MSF.858.821
    • Banzhaf S., Schwaiger S., Erlbacher T., Bauer A., Frey L.:
      Post-Trench Processing of Silicon Deep Trench Capacitors for Power Electronic Applications
      DOI: 10.1109/ISPSD.2016.7520862
    • Burenkov A., Matthus C., Erlbacher T.:
      Optimization of 4H-SiC UV Photodiode Performance Using Numerical Process and Device Simulation
      In: IEEE Sensors Journal 16 (2016), S. 4246-4252
      ISSN: 1530-437X
      DOI: 10.1109/JSEN.2016.2539598
    • Ditze S., Endruschat A., Schriefer T., Rosskopf A., Heckel T.:
      Inductive power transfer system with a rotary transformer for contactless energy transfer on rotating applications
      2016 IEEE International Symposium on Circuits and Systems, ISCAS 2016
      DOI: 10.1109/ISCAS.2016.7538876
    • Endruschat A., Heckel T., Reiner R., Waltereit P., Quay R., Ambacher O., März M., Eckardt B., Frey L.:
      Slew rate control of a 600 V 55 mΩ GaN cascode
      4th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2016 (Fayetteville, AR, 7. November 2016 - 9. November 2016)
      DOI: 10.1109/WiPDA.2016.7799963
    • Frey L., Förthner M., Hellmann R., Rommel M., Girschikofsky MG.:
      Waveguide Bragg gratings in Ormocer hybrid polymers
      In: Optics Express 24 (2016), S. 14725-14736
      ISSN: 1094-4087
      DOI: 10.1364/OE.24.014725
    • Förthner M., Rumler M., Stumpf F., Fader R., Rommel M., Frey L., Girschikofsky M., Belle S., Hellmann R., Klein JJ.:
      Hybrid polymers processed by substrate conformal imprint lithography for the fabrication of planar Bragg gratings
      In: Applied Physics A-Materials Science & Processing 122 (2016)
      ISSN: 0947-8396
      DOI: 10.1007/s00339-016-9767-6
    • Gruenler S., Rattmann G., Erlbacher T., Bauer AJ., Frey L.:
      Monolithic 3D TSV-based high-voltage, high-temperature capacitors
      In: Microelectronic Engineering 156 (2016), S. 19-23
      ISSN: 0167-9317
      DOI: 10.1016/j.mee.2016.02.008
    • Heckel T., Rettner C., März M.:
      Fundamental Efficiency Limits in Power Electronic Systems
      2015 IEEE International Telecommunications Energy Conference, INTELEC 2015
      DOI: 10.1109/INTLEC.2015.7572399
    • Hutzler A., Branscheid R., Jank M., Frey L., Spiecker E.:
      Graphene-Supported Microwell Liquid Cell for In Situ Electron Microscopy in Materials Science
      In: Microscopy and Microanalysis 22 (2016), S. 78 - 79
      ISSN: 1431-9276
      DOI: 10.1017/S1431927616012423
    • Hutzler A., Branscheid R., Jank M., Frey L., Spiecker E.:
      Graphene‐supported microwell liquid cell for in situ studies in TEM and SEM
      European Microscopy Congress 2016 (Lyon, 28. August 2016 - 2. September 2016)
      In: European Microscopy Congress 2016 Volume 1: Instrumentation and Methods 2016
      DOI: 10.1002/9783527808465.EMC2016.6612
    • Hürner A., Mitlehner H., Erlbacher T., Bauer A., Frey L.:
      Conduction loss reduction for bipolar injection field-effect-transistors (BIFET)
      Trans Tech Publications Ltd, 2016
      ISBN: 9783035710427
      DOI: 10.4028/www.scientific.net/MSF.858.917
    • Jelinek M., Laven JG., Ganagona N., Job R., Schustereder W., Schulze HJ., Rommel M., Frey L.:
      Metastable defects in proton implanted and annealed silicon
      In: Solid State Phenomena 242 (2016), S. 169-174
      ISSN: 1012-0394
      DOI: 10.4028/www.scientific.net/SSP.242.169
    • Jelinek M., Laven JG., Ganagona N., Schustereder W., Schulze HJ., Rommel M., Frey L.:
      The efficiency of hydrogen-doping as a function of implantation temperature
      Trans Tech Publications Ltd, 2016
      ISBN: 9783038356080
      DOI: 10.4028/www.scientific.net/SSP.242.175
    • Krach F., Heckel T., Frey L., Bauer A., Erlbacher T., März M.:
      Innovative Monolithic RC-Snubber for Fast Switching Power Modules
      9th International Conference on Integrated Power Electronics Systems (CIPS)
    • Krach F., Thielen N., Heckel T., Bauer A., Erlbacher T., Frey L., Heckel T.:
      Silicon integrated RC snubbers for applications up to 900V with reduced mechanical stress and high manufacturability
      (2016), Art.Nr.: 7548452
      ISSN: 15483770
      DOI: 10.1109/DRC.2016.7548452
      (anderer)
    • Kreutzer O., Heckel T., März M.:
      Using SiC MOSFET’s full potential – Switching faster than 200 kV/μs
      Trans Tech Publications Ltd, 2016
      ISBN: 9783035710427
      DOI: 10.4028/www.scientific.net/MSF.858.880
    • Liu X., Wegener CM., Polster S., Jank M., Roosen A., Frey L.:
      Materials Integration for Printed Zinc Oxide Thin-Film Transistors: Engineering of a Fully-Printed Semiconductor/Contact Scheme
      In: Journal of Display Technology 12 (2016)
      ISSN: 1551-319X
      DOI: 10.1109/JDT.2015.2445378
    • Lorentz V., Schwarz R., Heckel T., März M., Frey L., Heckel T.:
      Integrated galvanically isolated MOSFET and IGBT gate-driver circuit with switching speed control
      41st Annual Conference of the IEEE Industrial Electronics Society, IECON 2015
      DOI: 10.1109/IECON.2015.7392158
    • Matthus C., Erlbacher T., Burenkov A., Bauer A., Frey L.:
      Ion implanted 4H-SiC UV pin-diodes for solar radiation detection – Simulation and characterization
      In: Materials Science Forum 858 (2016), S. 1032-1035
      ISSN: 0255-5476
      DOI: 10.4028/www.scientific.net/MSF.858.1032
    • Meric Z., Mehringer C., Jank MPM., Peukert W., Frey L.:
      Electrical properties of solution processed layers based on Ge-Si alloy nanoparticles
      In: MRS Advances 1 (2016), S. 2331-2336
      ISSN: 2059-8521
      DOI: 10.1557/adv.2016.329
    • Munoz LE., Bilyy R., Biermann MHC., Kienhoefer D., Maueröder C., Hahn J., Brauner JM., Weidner D., Chen J., Scharin-Mehlmann M., Janko C., Friedrich RP., Mielenz D., Dumych T., Lootsik MD., Schauer C., Schett G., Hoffmann M., Zhao Y., Herrmann M.:
      Nanoparticles size-dependently initiate self-limiting NETosis-driven inflammation
      In: Proceedings of the National Academy of Sciences of the United States of America 113 (2016), S. E5856-E5865
      ISSN: 0027-8424
      DOI: 10.1073/pnas.1602230113
    • Oertel S., Jank M., Frey L., Hofmann C., Lang N., Struck M.:
      Screen-printed biochemical sensors for detection of ammonia levels in sweat - Towards integration with vital parameter monitoring sports gear
      9th International Conference on Biomedical Electronics and Devices, BIODEVICES 2016 - Part of 9th International Joint Conference on Biomedical Engineering Systems and Technologies, BIOSTEC 2016
      DOI: 10.5220/0005691501600165
    • Pobegen G., Weiße J., Hauck M., Weber HB., Krieger M.:
      On the origin of threshold voltage instability under operating conditions of 4H-SiC n-channel MOSFETs
      In: Materials Science Forum 858 (2016)
      ISSN: 0255-5476
      DOI: 10.4028/www.scientific.net/MSF.858.473
    • Polster S., Jank M., Frey L.:
      Correlation of film morphology and defect content with the charge-carrier transport in thin-film transistors based on ZnO nanoparticles
      In: Journal of Applied Physics 119 (2016)
      ISSN: 0021-8979
      DOI: 10.1063/1.4939289
    • Preuster P., Wagner L., Nuß A., Geiling J., Steinberger M., Bösmann A., Wasserscheid P.:
      Evaluation of a novel reactor concept for the process intensification and intelligent heat management in the hydrogenation and dehydrogenation of Liquid Organic Hydrogen Carriers
      21st World Hydrogen Energy Conference 2016, WHEC 2016 (Saragossa, 13. Juni 2016 - 16. Juni 2016)
      URL: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85016937508&origin=inward
    • Rumler M., Kollmuss M., Baier L., Michel F., Förthner M., Becker M., Rommel M., Frey L.:
      Combination of direct laser writing and soft lithography molds for combined nano- and microfabrication
      DOI: 10.1117/12.2248219
    • Sanftl B., Joffe C., Trautmann M., Weigel R., Kölpin A.:
      Reliabe Data Link for Power Transfer Control in an Inductive Charging System for Electric Vehicles
      IEEE MTT-S International Conference on Microwaves for Intelligent Mobility (San Diego, USA)
      In: IEEE MTT-S International Conference on Microwaves for Intelligent Mobility 2016
      DOI: 10.1109/ICMIM.2016.7533929
    • Schriefer T., Hofmann M.:
      Mechanical Reliability of Power Electronic Systems
      9th International Conference on Integrated Power Electronics Systems (Nuremberg, 8. März 2016 - 10. März 2016)
      URL: https://ieeexplore.ieee.org/document/7736747
    • Spitzer P., Condic M., Herrmann M., Oberstein T., Scharin-Mehlmann M., Gilbert D., Friedrich O., Groemer T., Kornhuber J., Lang R., Maler JM.:
      Amyloidogenic amyloid-?-peptide variants induce microbial agglutination and exert antimicrobial activity
      In: Scientific Reports 6 (2016), S. 32228
      ISSN: 2045-2322
      DOI: 10.1038/srep32228
    • Toumi, S. S., Ouennoughi Z., Strenger C., Frey L.:
      Determination of Fowler-Nordheim tunneling parameters in Metal-Oxide-Semiconductor structure including oxide field correction using a vertical optimization method
      In: Solid-State Electronics 122 (2016), S. 56-63
      ISSN: 0038-1101
      DOI: 10.1016/j.sse.2016.04.007
    • Trautmann M., Joffe C., Pflaum F., Sanftl B., Weigel R., Heckel T., Kölpin A.:
      Implementation of Simultaneous Energy and Data Transfer in a Contactless Connector
      IEEE Topical Conference on Wireless Sensors and Sensor Networks (WiSNet) (Austin, TX)
      DOI: 10.1109/WISNET.2016.7444333
    • Wegener CM., Spiehl D., Sauer HM., Mikschl F., Liu X., Kölpin N., Schmidt M., Jank M., Dörsam E., Roosen A.:
      Flexographic printing of nanoparticulate tin-doped indium oxide inks on PET foils and glass substrates
      In: Journal of Materials Science (2016)
      ISSN: 0022-2461
      DOI: 10.1007/s10853-016-9772-3
    • Xie F., Weiß R., Weigel R.:
      Simple Mathematical Operation-Based Calibration Method for Giant Magnetoresistive Current Sensor Applying B-Spline Modeling
      In: IEEE Sensors Journal 16 (2016), S. 4733-4739
      ISSN: 1530-437X
      DOI: 10.1109/JSEN.2016.2558468
    • Zhou X., Häublein V., Liu N., Nguyen NT., Zolnhofer E., Tsuchiya H., Manuela K., Meyer K., Schmuki P., Frey L.:
      TiO2 Nanotubes: Nitrogen-Ion Implantation at Low Dose Provides Noble-Metal-Free Photocatalytic H-2-Evolution Activity
      In: Angewandte Chemie International Edition 55 (2016), S. 3763-3767
      ISSN: 1433-7851
      DOI: 10.1002/anie.201511580
    • Ziller J., Dräger T., Heckel T.:
      Inductive high data rate transmission for bearing systems
      IEEE Topical Conference on Wireless Sensors and Sensor Networks, WiSNet 2016
      DOI: 10.1109/WISNET.2016.7444332

    2015

    • Adelmann B., Hürner A., Roth GL., Hellmann R.:
      Back side ablation of SiC diodes using a q-switched NIR laser
      In: Journal of Laser Micro Nanoengineering 10 (2015), S. 190-194
      ISSN: 1880-0688
      DOI: 10.2961/jlmn.2015.02.0016
    • Banzhaf C., Grieb M., Rambach M., Bauer A., Frey L.:
      Impact of post-trench processing on the electrical characteristics of 4H-SiC trench-MOS structures with thick top and bottom oxides
      Trans Tech Publications Ltd, 2015
      ISBN: 9783038354789
      DOI: 10.4028/www.scientific.net/MSF.821-823.753
    • Dudek D., Fettweis G., Frey L., Kissinger D., Kutter C., Mathis W., Lugli P., Russer P., Weigel R., Wolff I.:
      Hidden Electronics
      In: Positionspapier des VDE, 2015, S. 1-24
      URL: https://www.vde.com/de/fg/gmm/news/documents/vde_pp_hidden\%20electronics_rz_web.pdf
      (Working Paper)
    • Eckardt B., Heckel T.:
      High Power Density Automotive Converters using SiC or GaN Power Devices
      Automotive Power Electronics International Conference (APE)
      URL: http://www.sia.fr/publications/157-high-power-density-automotive-converters-using-sic-or-gan-power-devices
    • Erlbacher T., Schwarzmann H., Bauer AJ., Doehler GH., Schreivogel M., Lutz T., Guillen FH., Graf J., Fix R., Frey L.:
      Modeling of ion drift in 4H-SiC-based chemical MOSFET sensors
      In: Journal of Vacuum Science & Technology B 33 (2015)
      ISSN: 1071-1023
      DOI: 10.1116/1.4903054
    • Frey L., Osvet A., Zhou X., Haeublein V., Schmuki P., Frey L., Spiecker E., Mackovic M., Liu N., Hartmann M., Nakajima T., Venkatesan UM.:
      "Black" TiO2 Nanotubes Formed by High-Energy Proton Implantation Show Noble-Metal-co-Catalyst Free Photocatalytic H2-Evolution
      In: Nano Letters 15 (2015), S. 6815-6820
      ISSN: 1530-6984
      DOI: 10.1021/acs.nanolett.5b02663
    • Fügl M., Mackh G., Meissner E., Frey L.:
      Assessment of dicing induced damage and residual stress on the mechanical and electrical behavior of chips
      2015 65th IEEE Electronic Components and Technology Conference, ECTC 2015
      DOI: 10.1109/ECTC.2015.7159594
    • Girschikofsky MG., Förthner M., Rommel M., Frey L., Hellmann R.:
      Bragg gratings in imprinted Ormocer® waveguides
      24th International Conference on Plastic Optical Fibers, POF 2015
      URL: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84964659470&origin=inward
    • Grosch J., Teuber E., Jank M., Lorentz V., März M., Frey L.:
      Device optimization and application study of low cost printed temperature sensor for mobile and stationary battery based Energy Storage Systems
      International Conference on Smart Energy Grid Engineering, SEGE 2015
      DOI: 10.1109/SEGE.2015.7324599
    • Gruenler S., Rattmann G., Erlbacher T., Bauer AJ., Frey L.:
      High-voltage monolithic 3D capacitors based on through-silicon-via technology
      IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference, IITC/MAM 2015
      DOI: 10.1109/IITC-MAM.2015.7325655
    • Heckel T., Eckhardt B., März M., Frey L., Heckel T.:
      SiC MOSFETs in hard-switching bidirectional DC/DC converters
      Trans Tech Publications Ltd, 2015
      ISBN: 9783038354789
      DOI: 10.4028/www.scientific.net/MSF.821-823.689
    • Heckel T., Frey L.:
      A Novel Charge Based SPICE Model for Nonlinear Device Capacitances
      3rd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2015
      DOI: 10.1109/WiPDA.2015.7369263
    • Hofmann M., Eckardt B., Heckel T.:
      Inverter Technology for High-Speed Drives Like Electric Turbochargers
      10th ETG/GMM-Symposium on Innovative Small Drives and Micro-Motor Systems (IKMT)
    • Hürner A., Di Benedetto L., Erlbacher T., Mitlehner H., Bauer A., Frey L.:
      Robust double-ring junction termination extension design for high voltage power semiconductor devices based on 4H-SiC
      Trans Tech Publications Ltd, 2015
      ISBN: 9783038354789
      DOI: 10.4028/www.scientific.net/MSF.821-823.656
    • Hürner A., Erlbacher T., Mitlehner H., Bauer A., Frey L.:
      Temperature dependent characterization of bipolar injection field- effect-transistors (BiFET) for determining the short-circuit-capability
      Trans Tech Publications Ltd, 2015
      ISBN: 9783038354789
      DOI: 10.4028/www.scientific.net/MSF.821-823.806
    • Jelinek M., Laven JG., Kirnstoetter S., Schustereder W., Schulze H-., Rommel M., Frey L.:
      A DLTS study of hydrogen doped czochralski-grown silicon
      In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 365 (2015), S. 240-243
      ISSN: 0168-583X
      DOI: 10.1016/j.nimb.2015.07.078
    • Kaliya Perumal Veerapandian S., Beuer S., Rumler M., Stumpf F., Thomas K., Pillatsch L., Michler J., Frey L., Rommel M.:
      Comparison of silicon and 4H silicon carbide patterning using focused ion beams
      In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 365 (2015), S. 44-49
      ISSN: 0168-583X
      DOI: 10.1016/j.nimb.2015.07.079
    • Krach F., Schwarzmann H., Bauer A., Erlbacher T., Frey L.:
      Silicon nitride, a high potential dielectric for 600 v integrated RC-snubber applications
      In: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics 33 (2015), Art.Nr.: 01A112
      ISSN: 2166-2754
      DOI: 10.1116/1.4906082
    • Noll S., Rambach M., Grieb M., Scholten D., Bauer A., Frey L.:
      Influence of annealing, oxidation and doping on conduction-band near interface traps in 4H-SiC characterized by low temperature conductance measurements
      Trans Tech Publications Ltd, 2015
      ISBN: 9783038354789
      DOI: 10.4028/www.scientific.net/MSF.821-823.476
    • Paskaleva A., Rommel M., Hutzler A., Spassov D., Bauer A.:
      Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
      In: ACS Applied Materials and Interfaces 7 (2015), S. 17032 - 17043
      ISSN: 1944-8244
      DOI: 10.1021/acsami.5b03071
      URL: http://pubs.acs.org/doi/abs/10.1021/acsami.5b03071
    • Paskaleva A., Weinreich W., Bauer A., Lemberger M., Frey L.:
      Improved electrical behavior of ZrO2-based MIM structures by optimizing the O3 oxidation pulse time
      In: Materials Science in Semiconductor Processing 29 (2015), S. 124-131
      ISSN: 1369-8001
      DOI: 10.1016/j.mssp.2013.12.030
    • Peukert W., Meric Z., Mehringer C., Jank M., Frey L., Karpstein N.:
      Tunable conduction type of solution-processed germanium nanoparticle based field effect transistors and their inverter integration
      In: Physical Chemistry Chemical Physics 17 (2015), S. 22106-22114
      ISSN: 1463-9076
      DOI: 10.1039/c5cp03321g
    • Rouag, N., Ouennoughi Z., Rommel M., Murakami K., Frey L.:
      Current conduction mechanism of MIS devices using multidimensional minimization system program
      In: Microelectronics Reliability 55 (2015), S. 1028-1034
      ISSN: 0026-2714
      DOI: 10.1016/j.microrel.2015.05.001
    • Salinaro A., Pobegen G., Aichinger T., Zippelius B., Peters DP., Friedrichs P., Frey L.:
      Charge pumping measurements on differently passivated lateral 4H-SiC MOSFETs
      In: IEEE Transactions on Electron Devices 62 (2015), S. 155-163
      ISSN: 0018-9383
      DOI: 10.1109/TED.2014.2372874
    • Stadler A., Stolzke T., Gulden C.:
      Design and simulation of thermally optimized filter inductors for a 1mw windmill demonstrator
      2015 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2015
      URL: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84997418748∨igin=inward
    • Stadler A., Stolzke T., Gulden C.:
      Optimized filter inductors for a 1MW windmill demonstrator with an objective to reduced converter size
      17th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2015
      DOI: 10.1109/EPE.2015.7309130
    • Stolzke T., Stadler A., Gulden C.:
      Calculating phase currents for high frequency three phase inductors via the inductance matrix
      2015 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2015
      URL: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84997417432&origin=inward
    • Szwarc R., Frey L., Weber H., Moder I., Erlbacher T., Rommel M., Bauer AJ.:
      Modelling of the electrochemical etch stop with high reverse bias across pn-junctions
      26th Annual SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2015
      DOI: 10.1109/ASMC.2015.7164437
    • Wegener CM., Spiehl D., Mikschl F., Liu X., Roosen A.:
      Printing of Ultrathin Nanoparticulate Indium Tin Oxide Structures
      International Conference and Exhibition on Ceramic Interconnect and Ceramic Microsystems Technologies (CICMT)

    2014

    • Banzhaf C., Grieb M., Trautmann A., Bauer A., Frey L.:
      Influence of diverse post-trench processes on the electrical performance of 4H-SiC MOS structures
      Trans Tech Publications Ltd, 2014
      ISBN: 9783038350101
      DOI: 10.4028/www.scientific.net/MSF.778-780.595
    • Banzhaf C., Grieb M., Trautmann A., Bauer A., Frey L.:
      Investigation of trenched and high temperature annealed 4H-SiC
      Trans Tech Publications Ltd, 2014
      ISBN: 9783038350101
      DOI: 10.4028/www.scientific.net/MSF.778-780.742
    • Erlbacher T., Schwarzmann H., Krach F., Bauer AJ., Berberich SE., Kasko I., Frey L.:
      Reliability of monolithic RC-snubbers in MOS-based power modules
      5th Electronics System-Integration Technology Conference, ESTC 2014
      DOI: 10.1109/ESTC.2014.6962794
    • Erlekampf J., Seebeck J., Savva P., Meissner E., Friedrich J., Alt N., Schlücker E., Frey L.:
      Numerical time-dependent 3D simulation of flow pattern and heat distribution in an ammonothermal system with various baffle shapes
      In: Journal of Crystal Growth 403 (2014), S. 96-104
      ISSN: 0022-0248
      DOI: 10.1016/j.jcrysgro.2014.06.007
    • Frey L., Niedermeier MT., Wenger MM., Filimon R., Sedlacek V., Lorentz VR., Fort C., März M., Ferrieux JP.:
      Galvanically isolated differential data transmission using capacitive coupling and a modified Manchester algorithm for smart power converters
      2014 IEEE 23rd International Symposium on Industrial Electronics, ISIE 2014 (Istanbul)
      DOI: 10.1109/ISIE.2014.6865029
    • Frey L., Trapnauskas J., Rommel M., Bauer AJ., Frey L.:
      Thickness mapping of high-κ dielectrics at the nanoscale
      In: Applied Physics Letters 104 (2014), Art.Nr.: 052907
      ISSN: 0003-6951
      DOI: 10.1063/1.4863947
    • Fügl M., Mackh G., Meissner E., Frey L.:
      Analytical stress characterization after different chip separation methods
      In: Microelectronics Reliability 54 (2014), S. 1735-1740
      ISSN: 0026-2714
      DOI: 10.1016/j.microrel.2014.07.086
    • Haublein V., Birnbaum E., Ryssel H., Frey L., Grimm W.:
      Modification of polypropylene films for thin film capacitors by ion implantation
      20th International Conference on Ion Implantation Technology, IIT 2014
      DOI: 10.1109/IIT.2014.6939968
    • Heckel T., Frey L., Zeltner S.:
      Characterization and Application of 600 V Normally-Off GaN Transistors in Hard Switching DC/DC Converters
      26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014 (Waikoloa, HI)
      DOI: 10.1109/ISPSD.2014.6855976
    • Hilden T., Jänker P., Frey L.:
      Comparison of Si/SiC semiconductor performance using experiment-based simulation
      International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2014 (Nuremberg)
      URL: https://www.scopus.com/record/display.uri?eid=2-s2.0-84906535889∨igin=inward
    • Hürner A., Bonse C., Clemmer G., Kallinger B., Heckel T., Erlbacher T., Mitlehner H., Häublein V., Bauer A., Frey L., Heckel T.:
      Temperature and electrical field dependence of the ambipolar mobility in n-doped 4H-SiC
      Trans Tech Publications Ltd, 2014
      ISBN: 9783038350101
      DOI: 10.4028/www.scientific.net/MSF.778-780.487
    • Hürner A., Mitlehner H., Erlbacher T., Bauer A., Frey L.:
      Experimental analysis of bipolar SiC-devices for future energy distribution systems
      2014 16th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2014
      DOI: 10.1109/EPE.2014.6910847
    • Jelinek M., Laven JG., Job R., Schustereder W., Schulze HJ., Rommel M., Frey L.:
      New method to increase the doping efficiency of proton implantation in a high-dose regime
      13th High Purity and High Mobility Semiconductor Symposium - 2014 ECS and SMEQ Joint International Meeting
      DOI: 10.1149/06411.0199ecst
    • Jelinek M., Laven JG., Rommel M., Schustereder W., Schulze HJ., Frey L., Job R.:
      Deep-level defects in high-dose proton implanted and high-temperature annealed silicon
      13th High Purity and High Mobility Semiconductor Symposium - 2014 ECS and SMEQ Joint International Meeting
      DOI: 10.1149/06411.0173ecst
    • Jelinek M., Schustereder W., Laven JG., Schulze HJ., Kirnstoetter S., Rommel M., Frey L.:
      MeV-proton channeling in crystalline silicon
      20th International Conference on Ion Implantation Technology, IIT 2014
      DOI: 10.1109/IIT.2014.6940059
    • Kilian D., Polster S., Vogeler I., Frey L., Jank M., Peukert W.:
      Pulsed direct flame deposition and thermal annealing of transparent amorphous indium zinc oxide films as active layers in field effect transistors
      In: ACS Applied Materials and Interfaces 6 (2014), S. 12245-12251
      ISSN: 1944-8244
      DOI: 10.1021/am501837u
    • Koller TM., Schmid S., Sachnov S., Rausch MH., Wasserscheid P., Fröba AP.:
      Measurement and Prediction of the Thermal Conductivity of Tricyanomethanide- and Tetracyanoborate-Based Imidazolium Ionic Liquids
      In: International Journal of Thermophysics 35 (2014), S. 195-217
      ISSN: 0195-928X
      DOI: 10.1007/s10765-014-1617-1
    • Landwehr J., Fader R., Rumler M., Rommel M., Bauer A., Frey L., Simon B., Fodor B., Petrik P., Schiener A., Winter B., Spiecker E.:
      Optical polymers with tunable refractive index for nanoimprint technologies
      In: Nanotechnology 25 (2014), S. Article number 505301
      ISSN: 1361-6528
      DOI: 10.1088/0957-4484/25/50/505301
    • Laven JG., Jelinek M., Job R., Schustereder W., Schulze H-., Rommel M., Frey L.:
      DLTS characterization of proton-implanted silicon under varying annealing conditions
      In: Physica Status Solidi 251 (2014), S. 2189-2192
      ISSN: 0031-8957
      DOI: 10.1002/pssb.201400028
    • Murakami K., Rommel M., Hudec B., Rosova A., Husekova K., Dobrocka E., Rammula R., Kasikov A., Han JH., Lee W., Song SJ., Paskaleva A., Bauer AJ., Frey L., Froehlich K., Aarik J., Hwang CS.:
      Nanoscale characterization of TiO2 films grown by atomic layer deposition on RuO2 electrodes
      In: ACS Applied Materials and Interfaces 6 (2014), S. 2486-2492
      ISSN: 1944-8244
      DOI: 10.1021/am4049139
    • Noll S., Rambach M., Grieb M., Scholten D., Bauer A., Frey L.:
      Effect of shallow n-doping on field effect mobility in p-doped channels of 4H-SiC MOS field effect transistors
      Trans Tech Publications Ltd, 2014
      ISBN: 9783038350101
      DOI: 10.4028/www.scientific.net/MSF.778-780.702
    • Oertel S., Jank M., Teuber E., Bauer A., Frey L.:
      High-mobility metal-oxide thin-film transistors by spray deposition of environmentally friendly precursors
      In: Thin Solid Films 553 (2014), S. 114-117
      ISSN: 0040-6090
      DOI: 10.1016/j.tsf.2013.11.061
    • Scharin M., Rommel M., Dirnecker T., Marhenke J., Herrmann B., Rumler M., Fader R., Frey L., Herrmann M.:
      Bioactivation of plane and patterned PDMS thin films by wettability engineering
      In: BioNanoScience 4 (2014), S. 251-262
      ISSN: 2191-1630
      DOI: 10.1007/s12668-014-0145-6
    • Schimmel S., Künecke U., Steigerwald T., Hertweck B., Alt N., Schlücker E., Wellmann P.:
      In Situ Visualization of GaN Crystals in Ammonothermal High Pressure Autoclaves by X-ray Imaging
      German Conference on Crystal Growth (Halle, 12. März 2014 - 14. März 2014)
    • Stadler A., Huber R., Stolzke T., Gulden C.:
      Analytical calculation of copper losses in litz-wire windings of gapped inductors
      In: IEEE Transactions on Magnetics 50 (2014), Art.Nr.: 6748958
      ISSN: 0018-9464
      DOI: 10.1109/TMAG.2013.2282333
    • Stadler A., Stolzke T., Gulden C.:
      A new generation of modular power inductors with minimum thermal resistance
      2014 16th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2014
      DOI: 10.1109/EPE.2014.6910771
    • Stadler A., Stolzke T., Gulden C.:
      High frequency high current filter inductors with minimum thermal resistance
      16th International Power Electronics and Motion Control Conference and Exposition, PEMC 2014
      DOI: 10.1109/EPEPEMC.2014.6980507
    • Strenger C., Uhnevionak V., Mortet V., Ortiz G., Erlbacher T., Burenkov A., Bauer A., Cristiano F., Bedel-Pereira E., Pichler P., Ryssel H., Frey L.:
      Systematic analysis of the high-and low-field channel mobility in lateral 4H-SiC MOSFETs
      15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013 (Miyazaki)
      In: Silicon Carbide and Related Materials 2013 2014
      DOI: 10.4028/www.scientific.net/MSF.778-780.583
    • Thesen MW., Nees D., Ruttloff S., Rumler M., Rommel M., Schlachter F., Grützner S., Vogler M., Schleunitz A., Grützner G.:
      Inkjetable and photo-curable resists for large-area and high-throughput roll-to-roll nanoimprint lithography
      In: Journal of Micro-Nanolithography MEMS and MOEMS 13 (2014)
      ISSN: 1932-5150
      DOI: 10.1117/1.JMM.13.4.043003
    • Thesen MW., Rumler M., Schlachter F., Grützner S., Moormann C., Rommel M., Nees D., Ruttloff S., Pfirrmann S., Vogler M., Schleunitz A., Grützner G.:
      Enabling Large Area and High Throughput Roll-to-Roll NIL by Novel Inkjetable and Photo-curable NIL-Resists
      DOI: 10.1117/12.2046279

    2013

    • Adelmann B., Hürner A., Schlegel T., Bauer A., Frey L., Hellmann R.:
      Laser alloying nickel on 4H-silicon carbide substrate to generate ohmic contacts
      In: Journal of Laser Micro Nanoengineering 8 (2013), S. 97-101
      ISSN: 1880-0688
      DOI: 10.2961/jlmn.2013.01.0019
      (Zeitungsartikel)
    • Banzhaf C., Grieb M., Trautmann A., Bauer A., Frey L.:
      Characterization of diverse gate oxides on 4H-SiC 3D trench-MOS structures
      2013
      ISBN: 9783037856246
      DOI: 10.4028/www.scientific.net/MSF.740-742.691
    • Baum M., Polster S., Jank M., Alexeev I., Frey L., Schmidt M.:
      Laser melting of nanoparticulate transparent conductive oxide thin films
      In: Journal of Laser Micro Nanoengineering 8 (2013), S. 144-148
      ISSN: 1880-0688
      DOI: 10.2961/jlmn.2013.02.0005
    • Behrens T., Suenner T., Geinitz E., Schletz A., Frey L.:
      Optimization of copper top-side metallization for high performance SiC-devices
      2013
      ISBN: 9783037856246
      DOI: 10.4028/www.scientific.net/MSF.740-742.801
    • Fader R., Landwehr J., Rumler M., Rommel M., Bauer A., Frey L., Voelkel R., Brehm M., Kraft A.:
      Functional epoxy polymer for direct nano-imprinting of micro-optical elements
      In: Microelectronic Engineering 110 (2013), S. 90-93
      ISSN: 0167-9317
      DOI: 10.1016/j.mee.2013.02.030
    • Fader R., Rommel M., Bauer A., Rumler M., Frey L., Verschuuren MA., Van De Laar R., Ji R., Schoembs U.:
      Accuracy of wafer level alignment with substrate conformal imprint lithography
      In: Journal of Vacuum Science & Technology B 31 (2013), S. 6FB02
      ISSN: 1071-1023
      DOI: 10.1116/1.4824696
    • Hackenberg M., Rommel M., Rumler M., Lorenz J., Pichler P., Huet K., Negro R., Fisicaro ., La Magna A., Taleb N., Quillec M.:
      Melt Depth and Time Variations during Pulsed Laser Thermal Annealing with One and More Pulses,
      In: Solid-State Device Research Conference (ESSDERC), 2013 Proceedings of the European, 2013, S. 214-217
      DOI: 10.1109/ESSDERC.2013.6818857
    • Häublein V., Temmel G., Mitlehner H., Rattmann G., Strenger C., Hürner A., Bauer A., Ryssel H., Frey L.:
      Comparative study of n-LIGBT and n-LDMOS structures on 4H-SiC
      2013
      ISBN: 9783037856246
      DOI: 10.4028/www.scientific.net/MSF.740-742.887
    • Hürner A., Schlegl T., Adelmann B., Mitlehner H., Hellmann R., Bauer A., Frey L.:
      Alloying of ohmic contacts to n-type 4H-SiC via laser irradiation
      2013
      ISBN: 9783037856246
      DOI: 10.4028/www.scientific.net/MSF.740-742.773
    • Iglesias V., Martin-Martinez J., Porti M., Rodriguez R., Nafria M., Aymerich X., Erlbacher T., Rommel M., Murakami K., Bauer AJ., Frey L., Bersuker G.:
      Bimodal CAFM TDDB distributions in polycrystalline HfO2 gate stacks: The role of the interfacial layer and grain boundaries
      In: Microelectronic Engineering 109 (2013), S. 129-132
      ISSN: 0167-9317
      DOI: 10.1016/j.mee.2013.03.022
    • Jokubavicius V., Huang HH., Schimmel S., Liljedahl R., Yakimova R., Syväjärvi M.:
      Towards bulk-like 3C-SiC growth using low off-axis substrates
      In: Materials Science Forum 740-742 (2013), S. 275-278
      ISSN: 0255-5476
      DOI: 10.4028/www.scientific.net/msf.740-742.275
    • Kölpin N., Wegener CM., Teuber E., Polster S., Frey L., Roosen A.:
      Conceptional design of nano-particulate ITO inks for inkjet printing of electron devices
      In: Journal of Materials Science 48 (2013), S. 1623-1631
      ISSN: 0022-2461
      DOI: 10.1007/s10853-012-6919-8
    • Laven JG., Job R., Hans Joachim S., Niedernostheide FJ., Schustereder W., Frey L.:
      Activation and dissociation of proton-induced donor profiles in silicon
      In: ECS Journal of Solid State Science and Technology 2 (2013)
      ISSN: 2162-8769
      DOI: 10.1149/2.028309jss
    • Noll S., Scholten D., Grieb M., Bauer A., Frey L.:
      Electrical impact of the aluminum p-implant annealing on lateral MOSFET transistors on 4H-SiC n-epi
      2013
      ISBN: 9783037856246
      DOI: 10.4028/www.scientific.net/MSF.740-742.521
    • Ouennoughi Z., Strenger C., Bourouba F., Haeublein V., Ryssel H., Frey L.:
      Conduction mechanisms in thermal nitride and dry gate oxides grown on 4H-SiC
      In: Microelectronics Reliability 53 (2013), S. 1841-1847
      ISSN: 0026-2714
      DOI: 10.1016/j.microrel.2013.06.009
    • Rommel M., Jambreck JD., Lemberger M., Bauer A., Frey L., Murakami K., Richter C., Weinzierl P.:
      Influence of parasitic capacitances on conductive AFM I-V measurements and approaches for its reduction
      In: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics 31 (2013), Art.Nr.: 01A108
      ISSN: 2166-2754
      DOI: 10.1116/1.4768679
    • Rommel M., Rumler M., Haas A., Bauer AJ., Frey L.:
      Processing of silicon nanostructures by Ga+ resistless lithography and reactive ion etching
      In: Microelectronic Engineering 110 (2013), S. 177-182
      ISSN: 0167-9317
      DOI: 10.1016/j.mee.2013.03.081
    • Rumler M., Fader R., Haas A., Rommel M., Bauer A., Frey L.:
      Evaluation of resistless Ga+ beam lithography for UV NIL stamp fabrication
      In: Nanotechnology 24 (2013), S. 365302
      ISSN: 0957-4484
      DOI: 10.1088/0957-4484/24/36/365302
    • Stadler A., Huber R., Stolzke T., Gulden C.:
      The simulation of copper losses in litz-wire windings considering air gap fringing fields
      International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2013 (Nuremberg)
      URL: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84906347177∨igin=inward
    • Strenger C., Uhnevionak V., Burenkov A., Bauer A., Pichler P., Erlbacher T., Ryssel H., Frey L.:
      Influence of ion implantation in SiC on the channel mobility in lateral n-channel MOSFETs
      DOI: 10.1149/05804.0071ecst

    2012

    • Alt NS., Meissner E., Schlücker E., Frey L.:
      In situ monitoring technologies for ammonthermal reactors
      In: Physica Status Solidi (C) Current Topics in Solid State Physics 9 (2012), S. 436-439
      ISSN: 1862-6351
      DOI: 10.1002/pssc.201100361
    • Baum M., Polster S., Jank M., Alexeev I., Frey L., Schmidt M.:
      Efficient laser induced consolidation of nanoparticulate ZnO thin films with reduced thermal budget
      In: Applied Physics A-Materials Science & Processing 107 (2012), S. 269-273
      ISSN: 0947-8396
      DOI: 10.1007/s00339-012-6871-0
    • Daves W., Krauss A., Haeublein V., Bauer A., Frey L.:
      4H-SiC MOSFETs with a stable protective coating for harsh environment applications
      2012
      ISBN: 9783037854198
      DOI: 10.4028/www.scientific.net/MSF.717-720.1089
    • Daves W., Krauß A., Häublein V., Bauer A., Frey L.:
      Structural and reliability analysis of ohmic contacts to SiC with a stable protective coating for harsh environment applications
      In: ECS Journal of Solid State Science and Technology 1 (2012)
      ISSN: 2162-8769
      DOI: 10.1149/2.019201jss
    • Erlbacher T., Bauer AJ., Frey L.:
      Significant on-resistance reduction of LDMOS devices by intermitted trench gates integration
      In: IEEE Transactions on Electron Devices 59 (2012), S. 3470-3476
      ISSN: 0018-9383
      DOI: 10.1109/TED.2012.2220777
    • Erlbacher T., Bickermann M., Kallinger B., Meissner E., Bauer A., Frey L.:
      Ohmic and rectifying contacts on bulk AlN for radiation detector applications
      In: Physica Status Solidi (C) Current Topics in Solid State Physics 9 (2012), S. 968-971
      ISSN: 1862-6351
      DOI: 10.1002/pssc.201100341
    • Erlbacher T., Schwarzmann H., Bauer AJ., Berberich SE., vom Dorp J., Frey L.:
      Improving module performance and reliability in power electronic applications by monolithic integration of RC-snubbers
      24th International Symposium on Power Semiconductor Devices and ICs, ISPSD'12 (Bruges)
      DOI: 10.1109/ISPSD.2012.6229078
    • Fader R., Schmitt H., Rommel M., Bauer AJ., Frey L., Ji R., Hornung M., Brehm M., Vogler M.:
      Novel organic polymer for UV-enhanced substrate conformal imprint lithography
      In: Microelectronic Engineering 98 (2012), S. 238-241
      ISSN: 0167-9317
      DOI: 10.1016/j.mee.2012.07.010
    • Frey L., Hürner A., Bauer A., Erlbacher T.:
      Feasibility and limitations of anti-fuses based on bistable non-volatile switches for power electronic applications
      In: Solid-State Electronics 75 (2012), S. 33-36
      ISSN: 0038-1101
      DOI: 10.1016/j.sse.2012.05.004
    • Hilden T., Janker P., Frey L.:
      Reverse recovery of All-SiC switches
      International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2012 (Nuremberg)
      URL: https://www.scopus.com/record/display.uri?eid=2-s2.0-84874123396∨igin=inward
    • Hofmann M., Schletz A., Domes K., März M., Frey L.:
      Modular inverter power electronic for intelligent e-drives
      2012 2nd International Electric Drives Production Conference, EDPC 2012 (Nuremberg)
      DOI: 10.1109/EDPC.2012.6425132
    • Häublein V., Ryssel H., Frey L.:
      Purity of ion beams: Analysis and simulation of mass spectra and mass interferences in ion implantation
      In: Advances in Materials Science and Engineering 2012 (2012), Art.Nr.: 610150
      ISSN: 1687-8434
      DOI: 10.1155/2012/610150
    • Krach F., Hertel S., Waldmann D., Jobst J., Krieger M., Reshanov S., Schoner A., Weber HB.:
      A switch for epitaxial graphene electronics: Utilizing the silicon carbide substrate as transistor channel
      In: Applied Physics Letters 100 (2012), S. 122102
      ISSN: 0003-6951
      DOI: 10.1063/1.3695157
    • Laven J., Job R., Schulze H-., Niedernostheide FJ., Schustereder W., Frey L.:
      The thermal budget of hydrogen-related donor profiles: Diffusion-limited activation and thermal dissociation
      12th High Purity Silicon Symposium - 222nd ECS Meeting (Honolulu, HI)
      DOI: 10.1149/05005.0161ecst
    • Lorentz V., Wenger M., Giegerich M., Zeltner S., März M., Frey L.:
      Smart battery cell monitoring with contactless data transmission
      16th International Forum on Advanced Microsystems for Automotive Applications, AMAA 2012 (Berlin)
      DOI: 10.1007/978-3-642-29673-4_2
    • Lorentz V., Wenger M., Grosch J., Giegerich M., Jank M., März M., Frey L.:
      Novel cost-efficient contactless distributed monitoring concept for smart battery cells
      21st IEEE International Symposium on Industrial Electronics, ISIE 2012 (Hangzhou)
      DOI: 10.1109/ISIE.2012.6237285
    • Maier R., Haeublein V., Ryssel H., Völlm H., Feili D., Seidel H., Frey L.:
      Solid-phase epitaxy of silicon amorphized by implantation of the alkali elements rubidium and cesium
      19th International Conference on Ion Implantation Technology 2012, IIT 2012 (Valladolid)
      DOI: 10.1063/1.4766542
    • Mueller J., Boescke TS., Schroeder U., Hoffmann R., Mikolajick T., Frey L.:
      Nanosecond polarization switching and long retention in a novel MFIS-FET based on ferroelectric HfO 2
      In: IEEE Electron Device Letters 33 (2012), S. 185-187
      ISSN: 0741-3106
      DOI: 10.1109/LED.2011.2177435
    • Mueller J., Boescke TS., Schroeder U., Mueller S., Braeuhaus D., Boettger U., Frey L., Mikolajick T.:
      Ferroelectricity in simple binary ZrO 2 and HfO 2
      In: Nano Letters 12 (2012), S. 4318-4323
      ISSN: 1530-6984
      DOI: 10.1021/nl302049k
    • Roll G., Jakschik S., Goldmann M., Wachowiak A., Mikolajick T., Frey L.:
      Intrinsic MOSFET leakage of high-k peripheral DRAM devices: Measurement and simulation
      2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 (Hsinchu)
      DOI: 10.1109/VLSI-TSA.2012.6210165
    • Rommel M., Bauer AJ., Frey L.:
      Simple and efficient method to fabricate nano cone arrays by FIB milling demonstrated on planar substrates and on protruded structures
      In: Microelectronic Engineering 98 (2012), S. 242-245
      ISSN: 0167-9317
      DOI: 10.1016/j.mee.2012.07.009
    • Rumler M., Rommel M., Erlekampf J., Azizi M., Geiger T., Bauer AJ., Meissner E., Frey L.:
      Characterization of grain boundaries in multicrystalline silicon with high lateral resolution using conductive atomic force microscopy
      In: Journal of Applied Physics 112 (2012), Art.Nr.: 034909
      ISSN: 0021-8979
      DOI: 10.1063/1.4746742
    • Schmitt H., Duempelmann P., Fader R., Rommel M., Bauer AJ., Frey L., Brehm M., Kraft A.:
      Life time evaluation of PDMS stamps for UV-enhanced substrate conformal imprint lithography
      In: Microelectronic Engineering 98 (2012), S. 275-278
      ISSN: 0167-9317
      DOI: 10.1016/j.mee.2012.04.032
    • Schwarzmann H., Erlbacher T., Bauer A., Ryssel H., Frey L.:
      Amplitude modulated resonant push-pull driver for piezoelectric transformers in switching power applications
      2012 7th International Conference on Integrated Power Electronics Systems, CIPS 2012 (Nuremberg)
      URL: https://www.scopus.com/record/display.uri?eid=2-s2.0-84881091503∨igin=inward
    • Stadler A., Gulden C., Stolzke T.:
      Nonlinear inductors for active power factor correction circuits
      15th International Power Electronics and Motion Control Conference and Exposition, EPE-PEMC 2012 ECCE Europe (Novi Sad)
      DOI: 10.1109/EPEPEMC.2012.6397508
    • Stadler A., Stolzke T., Gulden C.:
      Nonlinear power inductors for large current crest factors
      International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2012 (Nuremberg)
      URL: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84874154772∨igin=inward

    2011

    • Bickermann M., Schimmel S., Epelbaum B., Filip O., Heimann P., Nagata S., Winnacker A.:
      Structural defects in aluminium nitride bulk crystals visualized by cathodoluminescence maps
      In: Physica Status Solidi (C) Current Topics in Solid State Physics 8 (2011), S. 2235–2238
      ISSN: 1862-6351
      DOI: 10.1002/pssc.201000864
    • Daves W., Krauss A., Behnel N., Haeublein V., Bauer A., Frey L.:
      Amorphous silicon carbide thin films (a-SiC:H) deposited by plasma-enhanced chemical vapor deposition as protective coatings for harsh environment applications
      In: Thin Solid Films 519 (2011), S. 5892-5898
      ISSN: 0040-6090
      DOI: 10.1016/j.tsf.2011.02.089
    • Daves W., Krauss A., Haeublein V., Bauer AJ., Frey L.:
      Enhancement of the stability of Ti and Ni ohmic contacts to 4H-SiC with a stable protective coating for harsh environment applications
      In: Journal of Electronic Materials 40 (2011), S. 1990-1997
      ISSN: 0361-5235
      DOI: 10.1007/s11664-011-1681-2
    • Daves W., Krauss A., Häublein V., Bauer A., Frey L.:
      Electrical characterization of lateral 4H-SiC MOSFETs in the temperature range of 25 to 600 °C for harsh environment applications
      2011 IMAPS International Conference on High Temperature Electronics Network, HiTEN 2011 (Oxford)
      URL: https://www.scopus.com/record/display.uri?eid=2-s2.0-84876889044∨igin=inward
    • Daves W., Krauss A., Le-Huu M., Kronmüller S., Haeublein V., Bauer A., Frey L.:
      Comparative study on metallization and passivation materials for high temperature sensor applications
      2011
      ISBN: 9783037850794
      DOI: 10.4028/www.scientific.net/MSF.679-680.449
    • Erlbacher T., Yanev VC., Rommel M., Bauer A., Frey L.:
      Gate oxide reliability at the nanoscale evaluated by combining conductive atomic force microscopy and constant voltage stress
      In: Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena 29 (2011), S. 01AB08
      ISSN: 0734-211X
      DOI: 10.1116/1.3532820
    • Fet A., Haeublein V., Bauer AJ., Ryssel H., Frey L.:
      Fluorine implantation for effective work function control in p-type metal-oxide-semiconductor high-k metal gate stacks
      In: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics 29 (2011)
      ISSN: 2166-2754
      DOI: 10.1116/1.3521471
    • Frey L., Le-Huu M., Grieb M., Schrey F., Schmitt H., Haeublein V., Bauer A., Ryssel H.:
      4H-SiC n-MOSFET logic circuits for high temperature operation
      2011
      ISBN: 9783037850794
      DOI: 10.4028/www.scientific.net/MSF.679-680.734
    • Garcia E., Sültrop C., Hausotte T.:
      Verbesserung der Detektion sphärischer Marker für die optische Navigationschirurgie.
      10. Jahrestagung der Deutschen Gesellschaft für Computer- und Roboterassistierte Chirurgie (Magedeburg, 15. September 2011 - 16. September 2011)
      In: Bugert O, Schipper J, Zachow S (Hrsg.): Proceedings, 10. Jahrestagung der Deutschen Gesellschaft für Computer- und Roboterassistierte Chirurgie 2011
    • Hofmann M., Eckhardt B., März M., Frey L.:
      Thermal characterization of an axle-twin-drive with system integrated double-inverter
      1st International Electric Drives Production Conference, EDPC-2011 (Nuremberg)
      DOI: 10.1109/EDPC.2011.6085560
    • Huang J., Ujwal R., Lemberger M., Jank M., Polster S., Ryssel H., Frey L.:
      Effects of oxygen and forming gas annealing on ZnO TFTs
      2010 MRS Fall Meeting (Boston, MA)
      DOI: 10.1557/opl.2011.1144
    • Jambreck J., Böhmler M., Rommel M., Hartschuh A., Bauer A., Frey L.:
      Light confinement by structured metal tips for antenna-based scanning near-field optical microscopy
      Instrumentation, Metrology, and Standards for Nanomanufacturing, Optics, and Semiconductors V (San Diego, CA)
      DOI: 10.1117/12.893306
    • Jambreck JD., Yanev V., Schmitt H., Rommel M., Bauer AJ., Frey L.:
      Manufacturing, characterization, and application of nanoimprinted metallic probe demonstrators for electrical scanning probe microscopy
      In: Microelectronic Engineering 88 (2011), S. 2584-2588
      ISSN: 0167-9317
      DOI: 10.1016/j.mee.2010.12.022
    • Jank M., Frey L., Peukert W., Körmer R., Wu J., Otto M.:
      EPR investigations of non-oxidized silicon nanoparticles from thermal pyrolysis of silane
      In: Physica Status Solidi 5 (2011), S. 244-246
      ISSN: 0031-8957
      DOI: 10.1002/pssr.201105208
    • Kaiser RJ., Koffel S., Pichler P., Bauer AJ., Amon B., Frey L., Ryssel H.:
      Germanium substrate loss during thermal processing
      In: Microelectronic Engineering 88 (2011), S. 499-502
      ISSN: 0167-9317
      DOI: 10.1016/j.mee.2010.08.031
    • Koffel S., Kaiser RJ., Bauer AJ., Amon B., Pichler P., Lorenz J., Frey L., Scheiblin P., Mazzocchi V., Barnes J-., Claverie A.:
      Experiments and simulation of the diffusion and activation of the n-type dopants P, As, and Sb implanted into germanium
      In: Microelectronic Engineering 88 (2011), S. 458-461
      ISSN: 0167-9317
      DOI: 10.1016/j.mee.2010.09.023
    • Laven J., Hans Joachim S., Häublein V., Niedernostheide FJ., Ryssel H., Frey L.:
      Dopant profiles in silicon created by MeV hydrogen implantation: Influence of annealing parameters
      In: Physica Status Solidi (C) Current Topics in Solid State Physics 8 (2011), S. 697--700
      ISSN: 1862-6351
      DOI: 10.1002/pssc.201000161
    • Laven JG., Job R., Schustereder W., Hans Joachim S., Niedernostheide FJ., Schulze H., Frey L.:
      Conversion efficiency of radiation damage profiles into hydrogenrelated donor profiles
      Trans Tech Publications Ltd, 2011
      ISBN: 9783037852323
      DOI: 10.4028/www.scientific.net/SSP.178-179.375
    • Le-Huu M., Schmitt H., Noll S., Grieb M., Schrey FF., Bauer AJ., Frey L., Ryssel H.:
      Investigation of the reliability of 4H-SiC MOS devices for high temperature applications
      In: Microelectronics Reliability 51 (2011), S. 1346-1350
      ISSN: 0026-2714
      DOI: 10.1016/j.microrel.2011.03.015
    • Lorentz VRH., Schwarzmann H., März M., Bauer AJ., Ryssel H., Frey L., Poure P., Braun F.:
      A novel PWM control for a bi-directional full-bridge DC-DC converter with smooth conversion mode transitions
      In: International Journal of Electronics 98 (2011), S. 1025-1054
      ISSN: 0020-7217
      DOI: 10.1080/00207217.2011.567035
    • Mueller J., Boescke TS., Braeuhaus D., Schroeder U., Boettger U., Sundqvist J., Kuecher P., Mikolajick T., Frey L.:
      Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applications
      In: Applied Physics Letters 99 (2011), Art.Nr.: 112901
      ISSN: 0003-6951
      DOI: 10.1063/1.3636417
    • Murakami K., Rommel M., Yanev V., Bauer A., Frey L.:
      Current voltage characteristics through grains and grain boundaries of high-k dielectric thin films measured by tunneling atomic force microscopy
      Frontiers of Characterization and Metrology for Nanoelectronics: 2011 (Grenoble)
      DOI: 10.1063/1.3657879
    • Murakami K., Rommel M., Yanev V., Erlbacher T., Bauer AJ., Frey L.:
      A highly sensitive evaluation method for the determination of different current conduction mechanisms through dielectric layers
      In: Journal of Applied Physics 110 (2011), Art.Nr.: 054104
      ISSN: 0021-8979
      DOI: 10.1063/1.3631088
    • Müller J., Schröder UP., Böschke TS., Müller I., Böttger U., Wilde L., Sundqvist J., Lemberger M., Kücher P., Mikolajick T., Frey L.:
      Ferroelectricity in yttrium-doped hafnium oxide
      In: Journal of Applied Physics 110 (2011), S. Article number 114113
      ISSN: 0021-8979
      DOI: 10.1063/1.3667205
    • Paskaleva A., Lemberger M., Bauer AJ., Frey L.:
      Implication of oxygen vacancies on current conduction mechanisms in TiN/Zr1-xAlxO2/TiN metal-insulator-metal structures
      In: Journal of Applied Physics 109 (2011), Art.Nr.: 076101
      ISSN: 0021-8979
      DOI: 10.1063/1.3565056
    • Roll G., Goldbach M., Frey L.:
      Leakage current and defect characterization of p+n-source/drain diodes
      In: Microelectronics Reliability 51 (2011), S. 2081-2085
      ISSN: 0026-2714
      DOI: 10.1016/j.microrel.2011.05.015
    • Roll G., Jakschik S., Burenkov A., Goldbach M., Mikolajick T., Frey L.:
      Impact of carbon junction implant on leakage currents and defect distribution: Measurement and simulation
      In: Solid-State Electronics (2011), S. 170-176
      ISSN: 0038-1101
      DOI: 10.1016/j.sse.2011.06.016
    • Roll G., Jakschik S., Goldbach M., Wachowiak A., Mikolajick T., Frey L.:
      Analysis of the effect of germanium preamorphization on interface defects and leakage current for high-k metal-oxide-semiconductor field-effect transistor
      In: Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena 29 (2011)
      ISSN: 0734-211X
      DOI: 10.1116/1.3521479
    • Schmitt H., Haeublein V., Bauer A., Frey L.:
      Influence of annealing parameters on surface roughness, mobility, and contact resistance of aluminium implanted 4H SiC
      2011
      ISBN: 9783037850794
      DOI: 10.4028/www.scientific.net/MSF.679-680.417
    • Schneider O., Epple P., Teuber E., Meyer B., Jank MPM., Rauh C., Delgado A.:
      Jet printing of colloidal solutions - Numerical modeling and experimental verification of the influence of ink and surface parameters on droplet spreading
      In: Advanced Powder Technology 22 (2011), S. 266-270
      ISSN: 0921-8831
      DOI: 10.1016/j.apt.2011.02.003
    • Walther S., Polster S., Jank MPM., Thiem H., Ryssel H., Frey L.:
      Tuning of charge carrier density of ZnO nanoparticle films by oxygen plasma treatment
      In: Advanced Powder Technology 22 (2011), S. 253-256
      ISSN: 0921-8831
      DOI: 10.1016/j.apt.2011.01.012
    • Walther S., Polster S., Meyer B., Jank MPM., Ryssel H., Frey L.:
      Properties of SiO2 and Si3 N4 as gate dielectrics for printed ZnO transistors
      In: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics 29 (2011)
      ISSN: 2166-2754
      DOI: 10.1116/1.3524291
    • Weis S., Körmer R., Jank M., Lemberger M., Otto M., Ryssel H., Peukert W., Frey L.:
      Conduction Mechanisms and Environmental Sensitivity of Solution-Processed Silicon Nanoparticle Layers for Thin-Film Transistors
      In: Small 7 (2011), S. 2853-2857
      ISSN: 1613-6829
      DOI: 10.1002/smll.201100703
    • Yanev V., Rommel M., Bauer AJ., Frey L.:
      Characterization of thickness variations of thin dielectric layers at the nanoscale using scanning capacitance microscopy
      In: Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena 29 (2011)
      ISSN: 0734-211X
      DOI: 10.1116/1.3532822
    • vom Dorp J., Berberich SE., Erlbacher T., Bauer A., Ryssel H., Frey L.:
      Monolithic RC-snubber for power electronic applications
      2011 IEEE 9th International Conference on Power Electronics and Drive Systems, PEDS 2011 (Singapore)
      DOI: 10.1109/PEDS.2011.6147217
    • vom Dorp J., Erlbacher T., Bauer AJ., Ryssel H., Frey L.:
      Dielectric layers suitable for high voltage integrated trench capacitors
      In: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics 29 (2011)
      ISSN: 2166-2754
      DOI: 10.1116/1.3525283

    2010

    • Baer E., Kunder D., Evanschitzky P., Lorenz J.:
      Coupling of Equipment and Feature-Scale Profile Simulation for Dry-Etching of Polysilicon Gate Lines
      Workshop (Bologna)
      In: Proceedings of SISPAD 2010 2010
    • Bauer A., Friedrichs P., Krieger M., Pensl G., Rupp R., Seyller T. (Hrsg.):
      Silicon Carbide and Related Materials 2009 - Parts 1 and 2
      Stafa-Zuerich: 2010
      (Materials Science Forum, Bd. 645-648)
      ISBN: 0-87849-279-8
    • Egelkraut S., März M., Rauch M., Schletz A., Frey L.:
      A Highly Integrated EMI Filter Using Polymer Bonded Soft Magnetics as Core Material
      IEEE Applied Power Electronics Conference (APEC) (Palm Springs)
    • Erdmann A., Fühner T., Evanschitzky P.:
      Mask diffraction analysis and optimization for EUV masks
      DOI: 10.1117/12.814119
    • Erlbacher T., Bauer AJ., Frey L.:
      Reduced on resistance in LDMOS devices by integrating trench gates into planar technology
      In: IEEE Electron Device Letters 31 (2010), S. 464-466
      ISSN: 0741-3106
      DOI: 10.1109/LED.2010.2043049
    • Fet A., Haeublein V., Bauer AJ., Ryssel H., Frey L.:
      Effective work function tuning in high-κ dielectric metal-oxide-semiconductor stacks by fluorine and lanthanide doping
      In: Applied Physics Letters 96 (2010), Art.Nr.: 053506
      ISSN: 0003-6951
      DOI: 10.1063/1.3303976
    • Fet A., Haeublein V., Bauer AJ., Ryssel H., Frey L.:
      Modeling of the effective work function instability in metal/high-κ dielectric stacks
      In: Journal of Applied Physics 107 (2010), Art.Nr.: 124514
      ISSN: 0021-8979
      DOI: 10.1063/1.3391280
    • Hinz J., Bauer AJ., Frey L.:
      Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application
      In: Semiconductor Science and Technology 25 (2010)
      ISSN: 0268-1242
      DOI: 10.1088/0268-1242/25/7/075009
    • Hinz J., Bauer AJ., Thiede T., Fischer RA., Frey L.:
      Evaluation of NbN thin films grown by MOCVD and plasma-enhanced ALD for gate electrode application in high-k/SiO2 gate stacks
      In: Semiconductor Science and Technology 25 (2010), Art.Nr.: 045009
      ISSN: 0268-1242
      DOI: 10.1088/0268-1242/25/4/045009
    • Jahn J., Erdmann A., Fühner T., Liu S., Shao F., Barenbaum A.:
      Topography-aware BARC optimization for double patterning
      SPIE Advanced Lithography (San Jose, 23. Februar 2010 - 25. Februar 2010)
      In: Proceedings of the SPIE 2010
      DOI: 10.1117/12.846441
    • Jambreck JD., Schmitt H., Amon B., Rommel M., Bauer AJ., Frey L.:
      Fabrication of metallic SPM tips by combining UV nanoimprint lithography and focused ion beam processing
      In: Microelectronic Engineering 87 (2010), S. 1123-1126
      ISSN: 0167-9317
      DOI: 10.1016/j.mee.2009.11.040
    • Kaiser RJ., Koffel S., Pichler P., Bauer AJ., Amon B., Claverie A., Benassayag G., Scheiblin P., Frey L., Ryssel H.:
      Honeycomb voids due to ion implantation in germanium
      In: Thin Solid Films 518 (2010), S. 2323-2325
      ISSN: 0040-6090
      DOI: 10.1016/j.tsf.2009.09.138
    • Körmer R., Jank M., Ryssel H., Schmid HJ., Peukert W.:
      Aerosol synthesis of silicon nanoparticles with narrow size distribution-Part 1: Experimental investigations
      In: Journal of Aerosol Science 41 (2010), S. 998--1007
      ISSN: 0021-8502
      DOI: 10.1016/j.jaerosci.2010.05.007
    • Laven J., Job R., Schulze HJ., Niedernostheide FJ., Häublein V., Schulze H., Schustereder W., Ryssel H., Frey L.:
      The Impact of Helium Co-Implantation on Hydrogen Induced Donor Profiles in Float Zone Silicon
      In: ECS Transactions 33 (2010), S. 51-62
      ISSN: 1938-5862
      DOI: 10.1149/1.3485682
    • Le-Huu M., Schrey F., Grieb M., Schmitt H., Haeublein V., Bauer A., Ryssel H., Frey L.:
      NMOS logic circuits using 4H-SiC MOSFETs for high temperature applications
      Trans Tech Publications Ltd, 2010
      ISBN: 9780878492794
      DOI: 10.4028/www.scientific.net/MSF.645-648.1143
    • Lorentz VR., Berberich SEB., März M., Bauer AJ., Ryssel H., Poure P., Braun F.:
      Light-load efficiency increase in high-frequency integrated DC-DC converters by parallel dynamic width controlling
      In: Analog Integrated Circuits and Signal Processing 62 (2010), S. 1-8
      ISSN: 0925-1030
      DOI: 10.1007/s10470-009-9323-9
    • Pichler P., Burenkov A., Lorenz J., Kampen C., Frey L.:
      Future challenges in CMOS process modeling
      In: Thin Solid Films 518 (2010), S. 2478-2484
      ISSN: 0040-6090
      DOI: 10.1016/j.tsf.2009.09.150
    • Rommel M., Jambreck JD., Ebm C., Platzgummer E., Bauer AJ., Frey L.:
      Influence of FIB patterning strategies on the shape of 3D structures: Comparison of experiments with simulations
      In: Microelectronic Engineering 87 (2010), S. 1566-1568
      ISSN: 0167-9317
      DOI: 10.1016/j.mee.2009.10.054
    • Rommel M., Spoldi G., Yanev V., Beuer S., Amon B., Jambreck J., Petersen S., Bauer AJ., Frey L.:
      Comprehensive study of focused ion beam induced lateral damage in silicon by scanning probe microscopy techniques
      In: Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena 28 (2010), S. 595-607
      ISSN: 0734-211X
      DOI: 10.1116/1.3431085
    • Schmitt H., Rommel M., Bauer A., Frey L., Bich A., Eisner M., Voelkel R., Hornung M.:
      Full wafer microlens replication by UV imprint lithography
      In: Microelectronic Engineering 87 (2010), S. 1074--1076
      ISSN: 0167-9317
      DOI: 10.1016/j.mee.2009.11.069
    • Walther S., Schäfer S., Jank MPM., Thiem H., Peukert W., Frey L., Ryssel H.:
      Influence of annealing temperature and measurement ambient on TFTs based on gas phase synthesized ZnO nanoparticles
      In: Microelectronic Engineering 87 (2010), S. 2312-2316
      ISSN: 0167-9317
      DOI: 10.1016/j.mee.2010.03.009

    2009

    • Egelkraut S., Rauch M., Schletz A., Gardocki A., März M., Ryssel H.:
      Polymer bonded soft magnetics for EMI filter applications
      3rd Int. Conference on Automotive Power Electronics (APE) (Paris, 25. März 2009 - 26. März 2009)
    • Erdmann A., Fuhrmann J., Fiebach A., Uhle M., Szmanda C., Truong C.:
      A model of self-limiting residual acid diffusion for pattern doubling
      In: Microelectronic Engineering 86 (2009), S. 792
      ISSN: 0167-9317
      DOI: 10.1016/j.mee.2008.10.023
    • Erdmann A., Pflaum C., Rahimi Z.:
      Finite integration (FI) method for modeling optical wavers in lithography masks
      7th International Fraunhofer IISB Lithography Simulation Workshop (Hersbruck)
      In: 7th International Fraunhofer IISB Lithography Simulation Workshop 2009
    • Fet A., Haeublein V., Bauer AJ., Ryssel H., Frey L.:
      Lanthanum implantation for threshold voltage control in metal/high-k devices
      In: Microelectronic Engineering 86 (2009), S. 1782-1785
      ISSN: 0167-9317
      DOI: 10.1016/j.mee.2009.03.042
    • Motzek K., Bich A., Erdmann A., Hornung M., Hennemeyer M., Meliorisz PB., Hofmann U., Ünal N., Voelkel R., Partel S., Hudek P.:
      Optimization of illumination pupils and mask features for proximity printing
      Micro- and Nano-Engineering (Ghent, Belgium)
      In: Micro- and Nano-Engineering 2009
      DOI: 10.1016/j.mee.2009.10.038
    • Mueller J., Boescke TS., Schroeder U., Reinicke M., Oberbeck L., Zhou D., Weinreich W., Kuecher P., Lemberger M., Frey L.:
      Improved manufacturability of ZrO2 MIM capacitors by process stabilizing HfO2 addition
      In: Microelectronic Engineering 86 (2009), S. 1818-1821
      ISSN: 0167-9317
      DOI: 10.1016/j.mee.2009.03.076
    • Patsis GP., Drygiannakis D., Raptis T., Gogoliddes E., Erdmann A.:
      Advanced lithography models for strict process control in the 32nm technology node
      In: Microelectronic Engineering 86 (2009), S. 513
      ISSN: 0167-9317
      DOI: 10.1016/j.mee.2009.01.050
    • Reibold D., Shao F., Erdmann A., Peschel U.:
      Extraordinary low transmission effects for ultra-thin patterned metal films
      In: Optics Express 17 (2009), S. 544
      ISSN: 1094-4087
      DOI: 10.1364/OE.17.000544
    • Shao F., Evanschitzky P., Fühner T., Erdmann A.:
      Efficient Analysis of Three Dimensional EUV Mask Induced Imageing Artifacts Using the Waveguide Decomposition Method
      BACUS (Monterey)
      In: BACUS 2009
      DOI: 10.1117/12.833464
    • Shao F., Evanschitzky P., Fühner T., Erdmann A.:
      Rigorous diffraction simulations of topographic wafer stacks in double patterning
      In: Microelectronic Engineering 86 (2009), S. 289
      ISSN: 0167-9317
      DOI: 10.1016/j.mee.2008.11.078
    • Straue N., Rauscher M., Walther S., Faber H., Roosen A.:
      Preparation and soft lithographic printing of nano-sized ITO-dispersions for the manufacture of electrodes for TFTs
      In: Journal of Materials Science 44 (2009), S. 6011 - 6019
      ISSN: 0022-2461
      DOI: 10.1007/s10853-009-3804-1
      URL: http://link.springer.com/article/10.1007%2Fs10853-009-3804-1
    • Yanev V., Erlbacher T., Rommel M., Bauer AJ., Frey L.:
      Comparative study between conventional macroscopic IV techniques and advanced AFM based methods for electrical characterization of dielectrics at the nanoscale
      In: Microelectronic Engineering 86 (2009), S. 1911-1914
      ISSN: 0167-9317
      DOI: 10.1016/j.mee.2009.03.094

    2008

    • Egelkraut S., März M., Ryssel H.:
      Polymer bonded soft magnetic particles for planar inductive devices
      5th International Conference on Integrated Power Systems (CIPS) (Nürnberg)
      URL: https://ieeexplore.ieee.org/document/5755689?arnumber=5755689
    • Erlbacher T., Jank MPM., Ryssel H., Frey L., Engl R., Walter A., Sezi R., Dehm C.:
      Self-aligned growth of organometallic layers for nonvolatile memories: Comparison of liquid-phase and vapor-phase deposition
      In: Journal of The Electrochemical Society 155 (2008), S. H693-H697
      ISSN: 0013-4651
      DOI: 10.1149/1.2957907
    • Martinez Limia A., Pichler P., Steen C., Paul S., Lerch W.:
      Modeling of the Diffusion and Activation of Arsenic in Silicon Including Clustering and Precipitation
      Gettering and Defect Engineering in Semiconductor Technology XII (Italien, 14. Oktober 2007 - 19. Oktober 2007)
      In: Gettering and Defect Engineering in Semiconductor Technology XII 2008
      DOI: 10.4028/www.scientific.net/SSP.131-133.277
    • Pei L., Duscher G., Steen C., Pichler P., Ryssel H., Napolitani E., De Salvador D., Piro AM., Terrasi AT., Severac F., Cristiano F., Ravichandran K., Gupta N., Windl W.:
      Detailed arsenic concentration profiles at Si/SiO2 interfaces
      In: Journal of Applied Physics 104 (2008), Art.Nr.: 043507
      ISSN: 0021-8979
      DOI: 10.1063/1.2967713
    • Rommel M., Bauer A., Ryssel H.:
      Detailed Carrier Lifetime Analysis of Iron-Contaminated Boron-doped Silicon by Comparison of Simulation and Measurement
      In: Journal of The Electrochemical Society 155 (2008), S. H117
      ISSN: 0013-4651
      DOI: 10.1149/1.2819628

    2007

    • Christoph D., Fühner T., Tollkühn B., Erdmann A., Kókai G.:
      Application of a memetic algorithm to the calibration of micro-lithography
      In: Grosan, Crina; Abraham, Ajith (Hrsg.): Hybrid Evolutionary Algorithms, Berlin Heidelberg: Springer, 2007, S. 201-239
      ISBN: 978-3-540-73296-9

      DOI: 10.1007/978-3-540-73297-6
    • Krieger M., Semmelroth K., Weber HB., Pensl G., Rambach M., Frey L.:
      Impurity Conduction in Silicon Carbide
      In: Materials Science Forum 556-557 (2007), S. 364
      ISSN: 0255-5476
    • Lemberger M., Schön F., Dirnecker T., Jank M., Frey L., Ryssel H., Paskaleva A., Zürcher S., Bauer A.:
      MOCVD of Hafnium Silicate Films Obtained from a Single-Source Precusor on Silicon and Germanium for Gate-Dielectric Applications
      In: Chemical Vapor Deposition 13 (2007), S. 105-111
      ISSN: 0948-1907
      DOI: 10.1002/cvde.200606511
    • Schmitt H., Frey L., Ryssel H., Rommel M., Lehrer C.:
      UV nanoimprint materials: Surface energies, residual layers, and imprint quality
      In: Journal of Vacuum Science & Technology B 25 (2007), S. 785-790
      ISSN: 1071-1023
      DOI: 10.1116/1.2732742
    • Wellmann P., Karl U., Kleber S., Schmitt H.:
      Cathodoluminescence characterization of organic semiconductor materials for light emitting device applications
      In: Journal of Applied Physics 101 (2007)
      ISSN: 0021-8979
      DOI: 10.1063/1.2743090

    2006

    • S.E. Berberich, M. Marz, A.J. Bauer, S.K. Beuer, H. Ryssel:
      Active Fuse
      2006 IEEE International Symposium on Power Semiconductor Devices and IC's (Naples, 4. Juni 2006 - 8. Juni 2006)
      In: Symposium on Power Semiconductor Devices and IC's 2006
      DOI: 10.1109/ISPSD.2006.1666088
    • Dirnecker T., Ryssel H.:
      Untersuchung von Aufladungseffekten bei der Ionenimplantation
      Aachen: Shaker Verlag, 2006
      (Erlanger Berichte Mikroelektronik)
      ISBN: 3-8322-5081-6
    • Ghicov A., Macák J., Tsuchiya H., Kunze J., Häublein V., Frey L., Schmuki P.:
      Ion implantation and annealing for an efficient N-doping of TiO2 nanotubes
      In: Nano Letters 6 (2006), S. 1080-1082
      ISSN: 1530-6984
      DOI: 10.1021/nl0600979
    • Häublein V., Frey L., Ryssel H.:
      The impact of mass resolution on molybdenum contamination for B, P, BF 2, and As implantations
      ION IMPLANTATION TECHNOLOGY: 16th International Conference on Ion Implantation Technology, IIT 2006 (Marseille)
      URL: https://www.scopus.com/record/display.uri?eid=2-s2.0-33846941211&origin=inward
    • Jank M., Kandziora C., Frey L., Ryssel H.:
      Well Design in a Bulk CMOS Technology with Low Mask Count
      2006 16th International Conference on Ion Implantation Technology (Marseille, 11. Juni 2006 - 16. November 2006)
      In: AIP Conference Proceedings Volume 866, Issue 1 2006
      DOI: 10.1063/1.2401476
    • Lugstein A., Frey L., Bertagnolli E., Platzgummer E., Biedermann A., Langfischer H., Eder-Kapl S., Kuemmel M., Cernusca S., Loeschner H., Lehrer C.:
      Simulation of ion beam direct structuring for 3D nanoimprint template fabrication
      In: Microelectronic Engineering 83 (2006), S. 936-939
      ISSN: 0167-9317
      DOI: 10.1016/j.mee.2006.01.140
    • Oechsner R., Pfeffer M., Pfitzner L., Ryssel H., Beer K., Boldin M., de Mey B., Engelhard M., O'Murchu C., Ditmar J., Colson P., Madore M., Krahn L., Kempe W., Luisman E.:
      Creation of E-Learning Content for Microelectronics Manufacturing
      12th IFAC Symposium on Information Control Problems in Manufacturing (Saint-Etienne, France, 17. Mai 2006 - 19. Mai 2006)
      In: Proceeding of the 12th IFAC Symposium on Information Control Problems in Manufacturing 2006
    • Peto G., Khanh N., Horvath Z., Molnar G., Gyulai J., Kotai E., Guczi L., Frey L.:
      Nanoscale morphology and photoemission of arsenic implanted germanium films
      In: Journal of Applied Physics 99 (2006)
      ISSN: 0021-8979
      DOI: 10.1063/1.2190717
    • Rambach M., Frey L., Bauer A., Ryssel H.:
      Extracting activation and compensation ratio from aluminum implanted 4H-SiC by modeling of resistivity measurements
      2006
      ISBN: 9780878494255
      URL: https://www.scopus.com/record/display.uri?eid=2-s2.0-37849042244&origin=inward

    2005

    • Bauer A., Paskaleva A., Lemberger M., Frey L., Ryssel H.:
      Thin HfxTiySixO films with varying Hf to Ti contents as candidates for high-k dielectrics
      207th ECS Meeting (Quebec)
      URL: https://www.scopus.com/record/display.uri?eid=2-s2.0-31844445401&origin=inward
    • Berberich SE., Bauer A., Frey L., Ryssel H.:
      Triple trench gate IGBTs
      17th International Symposium on Power Semiconductor Devices and ICs, ISPSD'05 (Sanata Barbara, CA)
      URL: https://www.scopus.com/record/display.uri?eid=2-s2.0-27744589892&origin=inward
    • Döhler G., Renner F., Klar O., Eckardt M., Schwanhäußer A., Malzer S., Driscoll D., Hanson M., Gossard A., Loata g., Löffler T., Roskos H.:
      THz-photomixer based on quasi-ballistic transport
      In: Semiconductor Science and Technology 20 (2005)
      ISSN: 0268-1242
      DOI: 10.1088/0268-1242/20/7/007
    • Frey L., Bauer A., Ryssel H.:
      Chemical vapor phase precipitation of new materials for sub 50 nm transistors Chemische Dampfphasenabscheidung von neuen Materialien für Sub-50-nm-Transistoren
      In: Chemie Ingenieur Technik 77 (2005), S. 1215-1216
      ISSN: 0009-286X
      DOI: 10.1002/cite.200590331
    • Haeublein V., Sadrawetz S., Frey L., Martinz HP., Ryssel H.:
      Investigations into the wear of a WL10 ion source
      In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 237 (2005), S. 341-345
      ISSN: 0168-583X
      DOI: 10.1016/j.nimb.2005.05.011
    • Häublein V., Frey L., Ryssel H.:
      Additional peaks in mass spectra due to charge exchange events and dissociation of molecular ions during extraction
      In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 237 (2005), S. 346-350
      ISSN: 0168-583X
      DOI: 10.1016/j.nimb.2005.05.012
    • Lemberger M., Paskaleva A., Zürcher S., Bauer A., Frey L., Ryssel H.:
      Electrical properties of hafnium silicate films obtained from a single-source MOCVD precursor
      In: Microelectronics Reliability 45 (2005), S. 819-822
      ISSN: 0026-2714
      DOI: 10.1016/j.microrel.2004.11.040
    • Lemberger M., Schön F., Dirnecker T., Jank M., Paskaleva A., Bauer A., Frey L., Ryssel H.:
      High-k Hafnium Silicate Films on Silicon and Germanium Wafers by MOCVD Using a Single-Source Precursor
      In: Proceedings of the 15th European Conference on Chemical Vapor Deposition (EUROCVD-15), Electrochemical Society, -: The Electrochemical Society, Inc., 2005, S. 873
    • Müller R., Künecke U., Weingärtner R., Schmitt H., Desperrier P., Wellmann P.:
      High Al-doping of SiC using a modified PVT (M-PVT) growth set-up
      In: Materials Science Forum 483 (2005), S. 31-34
      ISSN: 0255-5476
      DOI: 10.4028/www.scientific.net/MSF.483-485.31
    • Rambach M., Bauer A., Frey L., Friedrichs P., Ryssel H.:
      Annealing of Aluminium Implanted 4H-SiC: Comparison of Furnace and Lamp Annealing
      In: Materials Science Forum 483-485 (2005), S. 483
      ISSN: 0255-5476
    • Rambach M., Schmid F., Krieger M., Frey L., Bauer A., Pensl G., Ryssel H.:
      Implantation and Annealing of Aluminum in 4H Silicon Carbide
      In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 237 (2005), S. 68-71
      ISSN: 0168-583X
      DOI: 10.1016/j.nimb.2005.04.079
    • Rommel M., Groß M., Ettinger A., Lemberger M., Bauer A., Frey L., Ryssel H.:
      Characterization of interface state densitiesby photocurrent analysis: Comparison of results for different insulator layers
      In: Microelectronic Engineering 80 (2005), S. 50-53
      ISSN: 0167-9317
      DOI: 10.1016/j.mee.2005.04.042
    • Rommel M., Groß M., Frey L., Bauer A., Ryssel H.:
      Wafer scale characterization of interface state densities without test structures by photocurrent analysis
      35th European Solid State Device Research Conference (Grenoble)
      URL: https://www.scopus.com/record/display.uri?eid=2-s2.0-31744443828&origin=inward
    • Ryssel H., Ullrich M., Burenkov A.:
      Ion Sputtering at Grazing Incidence for SIMS-Analysis
      In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 228 (2005), S. 373-377
      ISSN: 0168-583X
      DOI: 10.1016/j.nimb.2004.10.073
    • Schmitt H., Müller R., Maier M., Winnacker A., Wellmann P.:
      Photoluminescence study of in-situ rare earth doped PVT-grown SiC single crystals
      In: Materials Science Forum 483 (2005), S. 445-448
      ISSN: 0255-5476
      DOI: 10.4028/www.scientific.net/MSF.483-485.445

    2004

    • Frey L., Rambach M., Weiss R., Bauer A., Ryssel H.:
      Investigation of rapid thermal annealed pn-junctions in SiC
      2004
      URL: https://www.scopus.com/record/display.uri?eid=2-s2.0-8744264042&origin=inward
    • Fühner T., Erdmann A., Farkas R., Tollkühn B., Kókai G.:
      Genetic Algorithms to Improve Mask and Illumination Geometries in Lithographic Imaging Systems
      1st European Workshop on Hardware Optimisation (EVOHOT2004) (Coimbra, 3. April 2004 - 5. April 2004)
      In: Günther R. Raidl, Stefano Cagnoni, Jürgen Branke, David Wolfe Corne, Rolf Drechsler, Yaochu Jin, Colin G. Johnson, Penousal Machado, Elena Marchiori, Franz Rothlauf, George D. Smith, Giovanni Squillero (Hrsg.): Applications of Evolutionary Computing - EvoWorkshops 2004: EvoBIO, EvoCOMNET, EvoHOT, EvoISAP, EvoMUSART, and EvoSTOC, Berlin Heidelberg: 2004
      DOI: 10.1007/978-3-540-24653-4_22
    • Lehrer C., Frey L., Petersen S., Ryssel H., Schäfer M., Sulzbach T.:
      Integration of field emitters into scanning probe microscopy sensors using focused ion and electron beams
      In: Journal of Vacuum Science & Technology B 22 (2004), S. 1402-1406
      ISSN: 1071-1023
      URL: https://www.scopus.com/record/display.uri?eid=2-s2.0-3242722353∨igin=inward
    • Lemberger M., Paskaleva A., Zürcher S., Bauer A., Frey L., Ryssel H.:
      Electrical characterization and reliability aspects of zirconium silicate films obtained from novel MOCVD precursors
      In: Microelectronic Engineering 72 (2004), S. 315-320
      ISSN: 0167-9317
      DOI: 10.1016/j.mee.2004.01.010
    • Nguyen PH., Lorenz J., Baer E., Ryssel H.:
      Modeling of Chemical-Mechanical Polishing on Patterned Wafers as Part of Integrated Topography Process Simulation
      MAM2004 (Leuven, Belgium, 7. März 2004 - 10. März 2004)
      In: Microelectronic Engineering 2004
      DOI: 10.1016/j.mee.2004.07.018
      URL: http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6V0W-4D1V29P-2-C&_cdi=5657&_user=746735&_orig=browse&_coverDate=10/01/2004&_sk=999239998&view=c&wchp=dGLbVlb-zSkzk&md5=4039dffb5d8e4b57dba393cf896acaef&ie=/sdarticle.pdf
    • Paskaleva A., Bauer A., Lemberger M., Zürcher S.:
      Physical and Electrical Properties of Thin High-k HfxTiySizO Film With varying Hf to Ti Ratios
      DOI: 10.1063/1.1702101
    • Schmidt C., Petrik P., Schneider C., Fried M., Löhner T., Bársony I., Gyulai J., Ryssel H.:
      Optical Characterization of Ferroelectric Strontium-Bismut-Tantalate (SBT) Thin Films
      In: Thin Solid Films 455-456 (2004), S. 495-499
      ISSN: 0040-6090
      DOI: 10.1016/j.tsf.2003.11.248
    • Weiss R., Frey L., Ryssel H.:
      Modeling of the influence of Schottky barrier inhomogeneities on SiC diode characteristics
      2004
      URL: https://www.scopus.com/record/display.uri?eid=2-s2.0-8644276383&origin=inward
    • Yasenov NN., Berberich SE., Frey L., Ryssel H.:
      Design, fabrication and characterization of a microactuator for nebulization of fluids

    2003

    • Bauer A., Rambach M., Frey L., Weiss R., Rupp R., Friedrichs P., Schörner R., Peters DP.:
      Surface Properties and Electrical Characteristics of Rapid Thermal Annealed 4H-SiC
      2003
      URL: https://www.scopus.com/record/display.uri?eid=2-s2.0-18744421066&origin=inward
    • Berberich SE., Bauer A., Frey L., Ryssel H.:
      Trench sidewall doping for lateral power devices
      33rd European Solid-State Device Research Conference, ESSDERC 2003
      DOI: 10.1109/ESSDERC.2003.1256893
    • Dirnecker T., Frey L., Bauer A., Ryssel H., Ruf A., Henke D., Beyer A.:
      Influence of Antenna Shape and Resist Patterns on Charging Damage During Ion Implantation
      Ion Implantation Technology (Taos, New Mexico, USA)
      In: IEEE Proc. on Ion Implantation Technology-2002, Piscataway: 2003
      DOI: 10.1109/IIT.2002.1257996
    • Erdmann A., Farkas R., Fühner T., Tollkühn B., Kókai G.:
      Mask and Source Optimization for Lithographic Imaging Systems
      Wave-Optical Systems Engineering II (San Diego, CA, 31. Dezember 2003 - 31. Dezember 2003)
      In: Wyrowski, F. (Hrsg.): Wave-Optical Systems Engineering II, SPIE 5182 2003
      DOI: 10.1117/12.504732
      URL: http://www2.informatik.uni-erlangen.de/publication/download/spie5182_12.ps.gz
    • Farkas R., Kókai G., Erdmann A., Fühner T., Tollkühn B.:
      Optimization of one-and two dimensional masks in the optical lithography
      Treffen der Fachgruppe Maschinelles Lernen, Wissensentdeckung, Data Mining der Gesellschaft für Informatik (FGML 2003) (Karlsruhe, 6. Oktober 2003 - 8. Oktober 2003)
      In: Treffen der Fachgruppe Maschinelles Lernen, Wissensentdeckung, Data Mining der Gesellschaft für Informatik (FGML 2003) 2003
      URL: http://www2.informatik.uni-erlangen.de/publication/download/fgml03.ps.gz
    • Frey L., Lehrer C.:
      Materials processing by focused ion beams for TEM sample preparation and nanostructuring Materialbearbeitung mittels fokussierter ionenstrahlen zur TEM-probenpräparation und nanostrukturierung
      In: Praktische Metallographie 40 (2003), S. 184-192
      ISSN: 0032-678X
      URL: https://www.scopus.com/record/display.uri?eid=2-s2.0-0038681908∨igin=inward
    • Frey L., Lehrer C., Ryssel H.:
      Nanoscale effects in focused ion beam processing
      In: Applied Physics A-Materials Science & Processing 76 (2003), S. 1017-1023
      ISSN: 0947-8396
      DOI: 10.1007/s00339-002-1943-1
    • Henke D., Walther S., Weemann J., Dirnecker T., Ruf A., Beyer A., Lee K.:
      Characterization of charging damage in plasma doping
      Ion Implantation Technology (Taos, New Mexico, USA)
      In: IEEE Proc. on Ion Implantation TEchnology-2002, Piscataway: 2003
      DOI: 10.1109/IIT.2002.1257973
    • Paskaleva A., Lemberger M., Zürcher S., Bauer A., Frey L., Ryssel H.:
      Electrical Characterization of Zirconium Silicate Films Obtained from Novel MOCVD Precursors
      WoDiM 2002 (Grenoble, France)
      In: Proceedings of the 12th Workshop on Dielectrics in Microelectronics (WoDiM 2002), Grenoble, France: 2003
      DOI: 10.1016/S0026-2714(03)00180-X
    • Tollkühn B., Fühner T., Matiut D., Erdmann A., Semmler A., Küchler B., Kókai G.:
      Will Darwins's Law Help Us to Improve Our Resist Models?
      Advances in Resist Technology and Processing, SPIE 5039 (Santa Clara, CA, 23. Februar 2003 - 23. Februar 2003)
      In: Theodore H. Fedynyshyn (Hrsg.): Advances in Resist Technology and Processing XX 2003
      DOI: 10.1117/12.485078
      URL: http://www2.informatik.uni-erlangen.de/publication/download/spie5039-33.pdf

    2002

    • Beyer A., Hausmann A., Junack M., Radecker J., Ruf A., Dirnecker T.:
      Plasma induced damage monitoring for HDP processes
      7th Int. Symp. On Plasma & Process Induced Damage (Maui, Hawaii, USA)
      In: Proc. 7th Int. Symp. On Plasma & Process Induced Damage, Santa Clara, USA: 2002
      DOI: 10.1109/PPID.2002.1042615
    • Boubekeur H., Mikolajick T., Bauer A., Frey L., Ryssel H.:
      Effect of barium contamination on gate oxide integrity in high-k dram
      In: Journal of Non-Crystalline Solids 303 (2002), S. 12-16
      ISSN: 0022-3093
      DOI: 10.1016/S0022-3093(02)00957-2
    • Boubekeur H., Mikolajick T., Pamler W., Höpfner J., Frey L., Ryssel H.:
      Platinum contamination issues in ferroelectric memories
      In: Journal of Applied Physics 92 (2002), S. 3257-3265
      ISSN: 0021-8979
      DOI: 10.1063/1.1500414
    • Dirnecker T., Ruf A., Frey L., Beyer A., Bauer A., Henke D., Ryssel H.:
      Influence of photoresist pattern on charging damage during high current ion implantation
      7th International Symposium on Plasma- and Process-Induced Damage, P2ID 2002
      DOI: 10.1109/PPID.2002.1042620
    • Frey L., Ryssel H. (Hrsg.):
      Erlanger Berichte Mikroelektronik
      Aachen: 2002
      ISBN: 3-8322-0960-3
    • Fujita M., Tajima J., Nakagawa T., Abo S., Kinomura A., Pászti F., Takai M., Schork R., Frey L., Ryssel H.:
      Development of enhanced depth-resolution technique for shallow dopant profiles
      In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 190 (2002), S. 26-33
      ISSN: 0168-583X
      DOI: 10.1016/S0168-583X(01)01248-4
    • Häublein V., Frey L., Ryssel H.:
      ENCOTION - A new simulation tool for energetic contamination analysis
      2002 14th IEEE International Conference on Ion Implantation Technology, IIT 2002
      DOI: 10.1109/IIT.2002.1257977
    • Häublein V., Frey L., Ryssel H., Walser H.:
      Investigation of lanthanum contamination from a lanthanated tungsten ion source
      2002 14th IEEE International Conference on Ion Implantation Technology, IIT 2002
      DOI: 10.1109/IIT.2002.1258011
    • Jank M., Frey L., Bauer A., Ryssel H.:
      Investigation of implantation-induced defects in thin gate oxides using low field tunnel currents
      2002 14th IEEE International Conference on Ion Implantation Technology, IIT 2002
      DOI: 10.1109/IIT.2002.1257972
    • Leistner T., Lehmbacher K., Härter P., Schmidt C., Bauer A., Frey L., Ryssel H.:
      MOCVD of titanium dioxide on the basis of new precursors
      In: Journal of Non-Crystalline Solids 303 (2002), S. 64-68
      ISSN: 0022-3093
      DOI: 10.1016/S0022-3093(02)00965-1
    • Weiss R., Frey L., Ryssel H.:
      Different ion implanted edge terminations for Schottky diodes on SiC
      2002 14th IEEE International Conference on Ion Implantation Technology, IIT 2002
      DOI: 10.1109/IIT.2002.1257958

    2001

    • Boubekeur H., Mikolajick T., Höpfner J., Dehm C., Pamler W., Steiner J., Kilian G., Kolbesen B., Bauer A., Frey L., Ryssel H.:
      Barium, strontium and bismuth contamination in CMOS processes
      Trans Tech Publications Ltd, 2001
      ISBN: 9783908450573
      DOI: 10.4028/www.scientific.net/SSP.76-77.9
    • Boubekeur H., Mikolajick T., Nagel N., Dehm C., Pamler W., Bauer A., Frey L., Ryssel H.:
      Impact of platinum contamination on ferroelectric memories
      13th International Symposium on Integrated Ferroelectrics (Colorado Springs, CO)
      DOI: 10.1080/10584580108015667
    • Dziomba T., Danzebrink H., Lehrer C., Frey L., Sulzbach T., Ohlsson O.:
      High-resolution constant-height imaging with apertured silicon cantilever probes
      In: Journal of Microscopy 202 (2001), S. 22-27
      ISSN: 0022-2720
      DOI: 10.1046/j.1365-2818.2001.00858.x
    • Jank MPM., Lemberger M., Bauer A., Frey L., Ryssel H.:
      Electrical reliability aspects of through the gate implanted MOS structures with thin oxides
      In: Microelectronics Reliability 41 (2001), S. 987-990
      ISSN: 0026-2714
      DOI: 10.1016/S0026-2714(01)00053-1
    • Lehrer C., Frey L., Petersen S., Ryssel H.:
      Limitations of focused ion beam nanomachining
      In: Journal of Vacuum Science & Technology B 19 (2001), S. 2533-2538
      ISSN: 1071-1023
      DOI: 10.1116/1.1417553
    • Lehrer C., Frey L., Petersen S., Sulzbach T., Ohlsson O., Dziomba T., Danzebrink H., Ryssel H.:
      Fabrication of silicon aperture probes for scanning near-field optical microscopy by focused ion beam nano machining
      In: Microelectronic Engineering (2001), S. 721-728
      ISSN: 0167-9317
      DOI: 10.1016/S0167-9317(01)00463-4
    • Schür C., Marek T., Strunk HP., Tautz S., Steen C., Kiesel P., Malzer S., Döhler G., Niecke M., Schröder F., Mayer R., Knappe R.:
      Substrate misorientation as additional parameter for low temperature growth of GaAs
      In: Physik mikrostrukturierter Halbleiter 23 (2001), S. 145-150
      ISSN: 1434-2073
    • Weiss R., Frey L., Ryssel H.:
      Tungsten, nickel, and molybdenum Schottky diodes with different edge termination
      In: Applied Surface Science 184 (2001), S. 413-418
      ISSN: 0169-4332
      DOI: 10.1016/S0169-4332(01)00527-X

    2000

    • Boubekeur H., Höpfner J., Mikolajick T., Dehm C., Frey L., Ryssel H.:
      Aspects of barium contamination in high dielectric dynamic random access memories
      In: Journal of The Electrochemical Society 147 (2000), S. 4297-4300
      ISSN: 0013-4651
      DOI: 10.1149/1.1394057
    • Funk K., Häublein V., Chakor H., Ameen M., Frey L., Ryssel H., Ramirez A.:
      Investigation of molybdenum contamination in 11B+ and 31P+ implants
      2000 13th International Conference on Ion Implantation Technology, IIT 2000 (Alpbach)
      DOI: 10.1109/.2000.924252
    • Jank M., Lemberger M., Frey L., Ryssel H.:
      Gate oxide damage due to through the gate implantation in MOS-structures with ultrathin and standard oxides
      2000 13th International Conference on Ion Implantation Technology, IIT 2000 (Alpbach)
      DOI: 10.1109/IIT.2000.924101
    • Kröner F., Schork R., Frey L., Burenkov A., Ryssel H.:
      Phosphorus Ion Shower Implantation for special power IC applications
      2000 13th International Conference on Ion Implantation Technology, IIT 2000 (Alpbach)
      DOI: 10.1109/.2000.924191
    • Lehrer C., Frey L., Petersen S., Mizutam M., Takai M., Ryssel H.:
      Defects and gallium - Contamination during focused ion beam micro machining
      2000 13th International Conference on Ion Implantation Technology, IIT 2000 (Alpbach)
      DOI: 10.1109/.2000.924248
    • Tajima J., Park Y., Fujita M., Takai M., Schork R., Frey L., Ryssel H.:
      Enhanced depth-resolution analysis with medium energy ion scattering (meis) for shallow junction profiling
      2000 13th International Conference on Ion Implantation Technology, IIT 2000 (Alpbach)
      DOI: 10.1109/.2000.924225
    • Weiland R., Boit C., Dawes N., Dzieslaty A., Demm E., Ebersberger B., Frey L., Geyer S., Hirsch A., Lehrer C., Meis P., Kamolz M., Lezec H., Rettenmaier H., Tlttes W., Trefchler R., Zimmermann H.:
      Wafer Conserving Full Range Construction Analysis for IC Fabrication and Process Development Based on FIB /Dual Beam Inline Application
      Proceedings of the 26th International Symposium for Testing and Failure Analysis (Bellevue, WA)
      In: Proceedings of the 26th International Symposium for Testing and Failure Analysis 2000
      URL: https://www.scopus.com/record/display.uri?eid=2-s2.0-10744227841∨igin=inward
    • Yavas O., Ochiai C., Takai M., Park Y., Lehrer C., Lipp S., Frey L., Ryssel H., Hosono A., Okuda S.:
      Field emitter array fabricated using focused ion and electron beam induced reaction
      In: Journal of Vacuum Science & Technology B 18 (2000), S. 976-979
      ISSN: 1071-1023
      DOI: 10.1116/1.591310

    1999

    • Bauer A., Mayer P., Frey L., Haeublein V., Ryssel H.:
      Forming nitrided gate oxides by nitrogen implantation into the substrate before gate oxidation by RTO
      Proceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98) (Kyoto, Jpn)
      In: Proceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98), Piscataway, NJ, United States: 1999
      URL: https://www.scopus.com/record/display.uri?eid=2-s2.0-0033338246&origin=inward
    • Bauer A., Mayer P., Frey L., Haeublein V., Ryssel H.:
      Implantation of nitrogen into polysilicon to suppress boron penetration through the gate oxide
      Proceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98) (Kyoto, Jpn)
      In: Proceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98), Piscataway, NJ, United States: 1999
      URL: https://www.scopus.com/record/display.uri?eid=2-s2.0-0033322718&origin=inward
    • Biró L., Márk G., Gyulai J., Havancsák K., Lipp S., Lehrer C., Frey L., Ryssel H.:
      AFM and STM investigation of carbon nanotubes produced by high energy ion irradiation of graphite
      In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 147 (1999), S. 142-147
      ISSN: 0168-583X
      DOI: 10.1016/S0168-583X(98)00565-5
    • Biró L., Márk G., Gyulai J., Rozlosnik N., Kürti J., Szabó B., Frey L., Ryssel H.:
      Scanning probe method investigation of carbon nanotubes produced by high energy ion irradiation of graphite
      In: Carbon 37 (1999), S. 739-744
      ISSN: 0008-6223
      DOI: 10.1016/S0008-6223(98)00264-4
    • Biró L., Szabó B., Márk G., Gyulai J., Havancsák K., Kürti J., Dunlop A., Frey L., Ryssel H.:
      Carbon nanotubes produced by high energy (E > 100 MeV), heavy ion irradiation of graphite
      In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 148 (1999), S. 1102-1105
      ISSN: 0168-583X
      DOI: 10.1016/S0168-583X(98)00738-1
    • Danzebrink H., Dziomba T., Sulzbach T., Ohlsson O., Lehrer C., Frey L.:
      Nano-slit probes for near-field optical microscopy fabricated by focused ion beams
      In: Journal of Microscopy 194 (1999), S. 335-339
      ISSN: 0022-2720
      DOI: 10.1046/j.1365-2818.1999.00505.x
    • Dziomba T., Sulzbach T., Ohlsson O., Lehrer C., Frey L., Danzebrink H.:
      Ion beam-treated silicon probes operated in transmission and cross-polarized reflection mode near-infrared scanning near-field optical microscopy (NIR-SNOM)
      In: Surface and Interface Analysis 27 (1999), S. 486-490
      ISSN: 0142-2421
      URL: https://www.scopus.com/record/display.uri?eid=2-s2.0-0032643999&origin=inward
    • Park Y., Nagai T., Takai M., Lehrer C., Frey L., Ryssel H.:
      Comparison of beam-induced deposition using ion microprobe
      In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 148 (1999), S. 25-31
      ISSN: 0168-583X
      URL: https://www.scopus.com/record/display.uri?eid=2-s2.0-0033513926&origin=inward
    • Park Y., Takai M., Lehrer C., Frey L., Ryssel H.:
      Impurity incorporation during beam assisted processing analyzed using nuclear microprobe
      In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 158 (1999), S. 487-492
      ISSN: 0168-583X
      DOI: 10.1016/S0168-583X(99)00371-7
    • Park Y., Takai M., Lehrer C., Frey L., Ryssel H.:
      Investigation of Cu films by focused ion beam induced deposition using nuclear microprobe
      In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 158 (1999), S. 493-498
      ISSN: 0168-583X
      DOI: 10.1016/S0168-583X(99)00501-7
    • Schmidt C., Lehnert W., Leistner T., Frey L., Ryssel H.:
      MOCVD of ferroelectric thin films
      Proceedings of the 1999 12th European Conference on Chemical Vapour Deposition ((EUROCVD12) (Barcelona, Spain)
      In: Proceedings of the 1999 12th European Conference on Chemical Vapour Deposition ((EUROCVD12), Les Ulis Cedex A, France: 1999
      URL: https://www.scopus.com/record/display.uri?eid=2-s2.0-0033188109&origin=inward

    1998

    • Montandon C., Bourenkov A., Frey L., Pichler P., Biersack JP.:
      Distortion of sims profiles due to ion beam mixing: Shallow arsenic implants in silicon
      In: Radiation Effects and Defects in Solids 145 (1998), S. 213-223
      ISSN: 1042-0150
      DOI: 10.1080/10420159808225765
    • Park Y., Takai M., Lehrer C., Frey L., Ryssel H.:
      Microprobe analysis of Pt films deposited by beam induced reaction
      In: Japanese Journal of Applied Physics 37 (1998), S. 7042-7046
      ISSN: 0021-4922
      URL: https://www.scopus.com/record/display.uri?eid=2-s2.0-4243307043&origin=inward
    • Park Y., Takai M., Nagai T., Kishimoto T., Seidl A., Lehrer C., Frey L., Ryssel H.:
      Microanalysis of masklessly fabricated micro structures using nuclear microprobe
      In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms (1998), S. 373-378
      ISSN: 0168-583X
      DOI: 10.1016/S0168-583X(97)00709-X

    1997

    • Biró L., Gyulai J., Havancsák K., Didyk A., Bogen S., Frey L., Ryssel H.:
      New method based on atomic force microscopy for in-depth characterization of damage in Si irraadiate with 209 MeV Kr
      In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 122 (1997), S. 559-562
      ISSN: 0168-583X
      DOI: 10.1016/S0168-583X(96)00662-3
    • Biró L., Gyulai J., Havancsák K., Didyk A., Frey L., Ryssel H.:
      In-depth damage distribution by scanning probe methods in targets irradiated with 200 MeV ions
      In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms (1997), S. 32-37
      ISSN: 0168-583X
      DOI: 10.1016/S0168-583X(96)01106-8
    • Frey L., Stoemenos J., Schork R., Nejim A., Hemment P.:
      Synthesis of SiC by high temperature C+ implantation into SiO2: The role of Si/SiO2 interface
      In: Journal of The Electrochemical Society 144 (1997), S. 4314-4320
      ISSN: 0013-4651
      DOI: 10.1149/1.1838184
    • Park Y., Takai M., Nagai T., Kishimoto T., Lehrer C., Frey L., Ryssel H.:
      Microanalysis of impurity contamination in masklessly etched area using focused ion beam
      In: Japanese Journal of Applied Physics 36 (1997), S. 7712-7716
      ISSN: 0021-4922
      URL: https://www.scopus.com/record/display.uri?eid=2-s2.0-0031346547&origin=inward
    • Saggio M., Montandon C., Bourenkov A., Frey L., Pichler P.:
      Distortion of sims profiles due to ion beam mixing
      In: Radiation Effects and Defects in Solids 141 (1997), S. 37-52
      ISSN: 1042-0150
      DOI: 10.1080/10420159708211555
    • Schwenke H., Knoth J., Fabry L., Pahlke S., Scholz R., Frey L.:
      Measurement of shallow arsenic impurity profiles in semiconductor silicon using time-of-flight secondary ion mass spectrometry and total reflection X-ray fluorescence spectrometry
      In: Journal of The Electrochemical Society 144 (1997), S. 3979-3983
      ISSN: 0013-4651
      DOI: 10.1149/1.1838122

    1996

    • Bogen S., Herden M., Frey L., Ryssel H.:
      Reduction of lateral parasitic current flow by buried recombination layers formed by high energy implantation of C or O into silicon
      Proceedings of the 1996 11th International Conference on Ion Implantation Technology (Austin, TX, USA)
      In: Ishida E.; Mehta S.; Banerjee S.; Current M.; Smith T.C.; et al (Hrsg.): Proceedings of the 1996 11th International Conference on Ion Implantation Technology, Piscataway, NJ, United States: 1996
      URL: https://www.scopus.com/record/display.uri?eid=2-s2.0-0030373286∨igin=inward
    • Frey L., Bogen S., Herden M., Ryssel H.:
      Deep implants for semiconductor device applications
      In: Radiation Effects and Defects in Solids 140 (1996), S. 87-101
      ISSN: 1042-0150
      DOI: 10.1080/10420159608212943
    • Jiao G., Bogen S., Frey L., Ryssel H.:
      A multi-laminate wire mesh ionizer for a Cs sputter negative ion source
      In: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 382 (1996), S. 332-334
      ISSN: 0168-9002
      DOI: 10.1016/S0168-9002(96)00701-2
    • Lipp S., Frey L., Lehrer C., Demm E., Pauthner S., Ryssel H.:
      A comparison of focused ion beam and electron beam induced deposition processes
      In: Microelectronics Reliability 36 (1996), S. 1779-1782
      ISSN: 0026-2714
      URL: https://www.scopus.com/record/display.uri?eid=2-s2.0-0030274008∨igin=inward
    • Lipp S., Frey L., Lehrer C., Frank B., Demm E., Pauthner S., Ryssel H.:
      Tetramethoxysilane as a precursor for focused ion beam and electron beam assisted insulator (SiOx) deposition
      In: Journal of Vacuum Science & Technology B 14 (1996), S. 3920-3923
      ISSN: 1071-1023
      URL: https://www.scopus.com/record/display.uri?eid=2-s2.0-0000353753∨igin=inward
    • Lipp S., Frey L., Lehrer C., Frank B., Demm E., Ryssel H.:
      Investigations on the topology of structures milled and etched by focused ion beams
      In: Journal of Vacuum Science & Technology B 14 (1996), S. 3996-3999
      ISSN: 1071-1023
      URL: https://www.scopus.com/record/display.uri?eid=2-s2.0-0001398692∨igin=inward

    1995

    • Bogen S., Körber K., Gong L., Frey L., Ryssel H.:
      Comparison of retrograde and conventional p-wells in regard of latch-up susceptibility
      In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 96 (1995), S. 411-415
      ISSN: 0168-583X
      DOI: 10.1016/0168-583X(94)00530-3
    • Frey L., Ryssel H., Bogen S., Hobler G., Simionescu A.:
      Model for the electronic stopping of channeled ions in silicon around the stopping power maximum
      In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 106 (1995), S. 47-50
      ISSN: 0168-583X
      DOI: 10.1016/0168-583X(95)00676-1
    • Gong L., Petersen S., Frey L., Ryssel H.:
      Improved delineation technique for two dimensional dopant profiling
      In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 96 (1995), S. 133-138
      ISSN: 0168-583X
      DOI: 10.1016/0168-583X(94)00472-2
    • Lipp S., Frey L., Franz G., Demm E., Petersen S., Ryssel H.:
      Local material removal by focused ion beam milling and etching
      In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 106 (1995), S. 630-635
      ISSN: 0168-583X
      DOI: 10.1016/0168-583X(95)00778-4

    1994

    • Biró L., Gyulai J., Bogen S., Frey L., Ryssel H.:
      Investigation of the effect of altered defect structure produced by photon assisted implantation on the diffusion of As in silicon during thermal annealing
      In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 85 (1994), S. 925-928
      ISSN: 0168-583X
      DOI: 10.1016/0168-583X(94)95952-8
    • Frey L., Pichler P., Kasko I., Thies I., Lipp S., Streckfuss N., Gong L., Ryssel H.:
      Practical aspects of ion beam analysis of semiconductor structures
      In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 85 (1994), S. 356-362
      ISSN: 0168-583X
      DOI: 10.1016/0168-583X(94)95844-0
    • Gong L., Bogen S., Frey L., Jung W., Ryssel H.:
      Analytical description of high energy implantation profiles of boron and phosphorus into crystalline silicon
      In: Radiation Effects and Defects in Solids 127 (1994), S. 385-395
      ISSN: 1042-0150
      DOI: 10.1080/10420159408221046
    • Gyulai J., Ryssel H., Biró L., Frey L., Kuki A., Kormány T., Serfozo G., Khanh N.:
      Athermal effects in ion implanted layers
      In: Radiation Effects and Defects in Solids 127 (1994), S. 397-404
      ISSN: 1042-0150
      DOI: 10.1080/10420159408221047

    1993

    • Biró L., Gyulai J., Ryssel H., Frey L., Kormány T., Tuan N., Horváth z.:
      Photon assisted implantation (PAI)
      In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms (1993), S. 607-611
      ISSN: 0168-583X
      DOI: 10.1016/0168-583X(93)96191-E
    • Bogen S., Gong L., Frey L., Ryssel H.:
      High energy implantation of 10B and 11B into (100) silicon in channel and in random direction
      In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms (1993), S. 659-662
      ISSN: 0168-583X
      DOI: 10.1016/0168-583X(93)96203-O
    • Frey L., Ergele W., Falter T., Gong L., Ryssel H.:
      Analysis of microstructured samples by focused ion beam sample preparation
      In: Microelectronic Engineering 21 (1993), S. 375-378
      ISSN: 0167-9317
      DOI: 10.1016/0167-9317(93)90095-M
    • Gong L., Frey L., Bogen S., Ryssel H.:
      A novel delineation technique for 2D-profiling of dopants in crystalline silicon
      In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 74 (1993), S. 186-190
      ISSN: 0168-583X
      DOI: 10.1016/0168-583X(93)95040-C
    • Kasko I., Dehm C., Frey L., Ryssel H.:
      Effect of ion-beam mixing temperature on cobalt silicide formation
      In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms (1993), S. 786-789
      ISSN: 0168-583X
      DOI: 10.1016/0168-583X(93)90682-V
    • Kroninger F., Streckfuss N., Frey L., Falter T., Ryzlewicz C., Pfitzner L., Ryssel H.:
      Application of advanced contamination analysis for qualification of wafer handling systems and chucks
      In: Applied Surface Science 63 (1993), S. 93-98
      ISSN: 0169-4332
      DOI: 10.1016/0169-4332(93)90070-R
    • Ryssel H., Frey L., Streckfuss N., Schork R., Kroninger F., Falter T.:
      Contamination control and ultrasensitive chemical analysis
      In: Applied Surface Science 63 (1993), S. 79-87
      ISSN: 0169-4332
      DOI: 10.1016/0169-4332(93)90068-M

    1992

    • Antos L., Gyulai J., Khanh N., Frey L.:
      End-of-range disorder influenced by inherent oxygen in silicon
      In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 71 (1992), S. 399-405
      ISSN: 0168-583X
      DOI: 10.1016/0168-583X(92)95357-W
    • Frey L., Bogen S., Gong L., Jung W., Ryssel H., Gyulai J.:
      High energy ion implantation for semiconductor application at Fraunhofer-AIS, Erlangen
      In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 62 (1992), S. 410-415
      ISSN: 0168-583X
      DOI: 10.1016/0168-583X(92)95267-U
    • Frey L., Kroninger F., Streckfusse N., Ryssel H., Margail J.:
      Characterization of metal impurities in silicon-on-insulator material
      In: Materials Science and Engineering B-Advanced Functional Solid-State Materials 12 (1992), S. 195-198
      ISSN: 0921-5107
      DOI: 10.1016/0921-5107(92)90285-H
    • Gong L., Bogen S., Frey L., Jung W., Ryssel H.:
      Simulation of high energy implantation profiles in crystalline silicon
      In: Microelectronic Engineering (1992), S. 495-498
      ISSN: 0167-9317
      DOI: 10.1016/0167-9317(92)90482-7
    • Streckfusse N., Frey L., Zielonka G., Kroninger F., Ryzlewicz C., Ryssel H.:
      Analysis of trace metals on silicon surfaces
      In: Fresenius Zeitschrift für Analytische Chemie 343 (1992), S. 765-768
      ISSN: 0016-1152
      DOI: 10.1007/BF00633562

    1991

    • Gyulai J., Frey L., Ryssel H., Khanh N.:
      Effect of oxygen on the formation of end-of-range disorder in implantation amorphized silicon
      In: Journal of Materials Research 6 (1991), S. 1695-1700
      ISSN: 0884-2914
      DOI: 10.1557/JMR.1991.1695
    • Oechsner R., Kluge A., Frey L., Ryssel H.:
      Tribological properties of carbonized photoresist
      In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms (1991), S. 793-797
      ISSN: 0168-583X
      DOI: 10.1016/0168-583X(91)95706-J
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