Publikationen
2023
Berkmann F. , Steuer O. , Ganss F. , Prucnal S. , Schwarz D. , Fischer IA. , Schulze J. :Sharp MIR plasmonic modes in gratings made of heavily doped pulsed laser-melted Ge1-xSnx In: Optical Materials Express 13 (2023 ), S. 752-763 ISSN: 2159-3930 DOI: 10.1364/OME.479637
Hutzler A. , Fritsch B. , Matthus CD. , Jank MP. , Rommel M. :Author Correction: Highly accurate determination of heterogeneously stacked Van-der-Waals materials by optical microspectroscopy (Scientific Reports, (2020), 10, 1, (13676), 10.1038/s41598-020-70580-3) In: Scientific Reports 13 (2023 ), Art.Nr.: 1410 ISSN: 2045-2322 DOI: 10.1038/s41598-023-28605-0
Pham A. :Systemübergreifende modulare Charakterisierung von Dünnschichtsystemen mittels Reflexionsmessungen (Masterarbeit, 2023 )
Schimmel S. , Tomida D. , Ishiguro T. , Honda Y. , Chichibu SF. , Amano H. :Temperature Field, Flow Field, and Temporal Fluctuations Thereof in Ammonothermal Growth of Bulk GaN—Transition from Dissolution Stage to Growth Stage Conditions In: Materials 16 (2023 ), S. 2016 ISSN: 1996-1944 DOI: 10.3390/ma16052016
Schmidt R. :Einzelprozessentwicklung für die Herstellung von Halbleiterbauelementen auf 4H-SiC a-Plane Substraten (Masterarbeit, 2023 )
Sk MR. , Thunder S. , Lehninger D. , Sanctis S. , Raffel Y. , Lederer M. , Jank MPM. , Kaempfe T. , De S. , Chakrabarti B. :Ferroelectric Content-Addressable Memory Cells with IGZO Channel: Impact of Retention Degradation on the Multibit Operation In: ACS Applied Electronic Materials 5 (2023 ), S. 812-820 ISSN: 2637-6113 DOI: 10.1021/acsaelm.2c01357
Völkl A. , Toutouly J. , Drobek D. , Apeleo Zubiri B. , Spiecker E. , Klupp Taylor R. :Gram-Scale Continuous Flow Synthesis of Silver-on-Silica Patchy Nanoparticles with Widely Tunable Resonances for Plasmonics Applications In: ACS Applied Nano Materials (2023 )ISSN: 2574-0970 DOI: 10.1021/acsanm.3c00869
Weißhaupt D. , Funk HS. , Oehme M. , Bloos D. , Berkmann F. , Seidel L. , Fischer IA. , Schulze J. :High mobility Ge 2DHG based MODFETs for low-temperature applications In: Semiconductor Science and Technology 38 (2023 ), Art.Nr.: 035007 ISSN: 0268-1242 DOI: 10.1088/1361-6641/acb22f
2022
Baierhofer D. , Thomas B. , Staiger F. , Marchetti B. , Foerster C. , Erlbacher T. :Defect reduction in SiC epilayers by different substrate cleaning methods In: Materials Science in Semiconductor Processing 140 (2022 )ISSN: 1369-8001 DOI: 10.1016/j.mssp.2021.106414
Berkmann F. , Augel L. , Hack M. , Kawaguchi Y. , Weisshaupt D. , Fischer IA. , Schulze J. :Optimization of Fully Integrated Al Nanohole Array-Based Refractive Index Sensors for Use With a LED Light Source In: IEEE Photonics Journal 14 (2022 )ISSN: 1943-0655 DOI: 10.1109/JPHOT.2022.3177354
Boettcher N. , Takamori T. , Wada K. , Saito W. , Nishizawa SI. , Erlbacher T. :Short Circuit Performance and Current Limiting Mode of a Monolithically Integrated SiC Circuit Breaker for DC Applications up to 800 v 24th European Conference on Power Electronics and Applications, EPE 2022 ECCE Europe (Hannover , 5. September 2022 - 9. September 2022 )In: 24th European Conference on Power Electronics and Applications, EPE 2022 ECCE Europe 2022
Daneri S. , Kerschbaum A. , Runa E. :One-dimensionality of the minimizers for a diffuse interface generalized antiferromagnetic model in general dimension In: Journal of Functional Analysis 283 (2022 ), Art.Nr.: 109715 ISSN: 0022-1236 DOI: 10.1016/j.jfa.2022.109715
Dreher V. , Joch D. , Kren H. , Schwarberg J. , Jank MP. :Ultrathin and flexible sensors for pressure and temperature monitoring inside battery cells 2022 IEEE Sensors Conference, SENSORS 2022 (Dallas, TX , 30. Oktober 2022 - 2. November 2022 )In: Proceedings of IEEE Sensors 2022 DOI: 10.1109/SENSORS52175.2022.9967234
Friedrich RP. , Kappes M. , Cicha I. , Tietze R. , Braun C. , Schneider-Stock R. , Nagy R. , Alexiou C. , Janko C. :Optical Microscopy Systems for the Detection of Unlabeled Nanoparticles In: International Journal of Nanomedicine Volume 17 (2022 ), S. 2139-2163 ISSN: 1176-9114 DOI: 10.2147/IJN.S355007
Fritsch B. , Wu M. , Hutzler A. , Zhou D. , Spruit R. , Vogl L. , Will J. , Pérez Garza H. , März M. , Jank M. , Spiecker E. :Sub-Kelvin thermometry for evaluating the local temperature stability within in situ TEM gas cells In: Ultramicroscopy 235 (2022 ), S. 113494 ISSN: 0304-3991 DOI: 10.1016/j.ultramic.2022.113494 URL: https://doi.org/10.1088/1361-6528/ab8a8c
Fritsch B. , Zech T. , Bruns M. , Körner A. , Khadivianazar S. , Wu M. , Zargar Talebi N. , Virtanen S. , Unruh T. , Jank M. , Spiecker E. , Hutzler A. :Radiolysis‐Driven Evolution of Gold Nanostructures – Model Verification by Scale Bridging In Situ Liquid‐Phase Transmission Electron Microscopy and X‐Ray Diffraction In: Advanced Science 9 (2022 ), Art.Nr.: 2202803 ISSN: 2198-3844 DOI: 10.1002/advs.202202803 URL: https://onlinelibrary.wiley.com/doi/10.1002/advs.202202803
Jena S. :Optimierung von Lithographieprozessen auf Germaniumoberflächen zur Herstellung von Nanodrähten (Bachelorarbeit, 2022 )
Marhenke J. , Dirnecker T. , Vogel N. , Rommel M. :Increasing flow rates in polydimethylsiloxane-based deterministic lateral displacement devices for sub-micrometer particle separation In: Microfluidics and Nanofluidics 27 (2022 ), Art.Nr.: 2 ISSN: 1613-4982 DOI: 10.1007/s10404-022-02609-0
Marzban B. , Seidel L. , Kiyek V. , Liu T. , Zöllner M. , Ikonic Z. , Capellini G. , Buca D. , Schulze J. , Oehme M. , Witzens J. :Modeling and design of an electrically pumped SiGeSn microring laser Silicon Photonics XVII 2022 (Online , 20. Februar 2022 - 24. Februar 2022 )In: Graham T. Reed, Andrew P. Knights (Hrsg.): Proceedings of SPIE - The International Society for Optical Engineering 2022 DOI: 10.1117/12.2609537
Marzban B. , Seidel L. , Liu T. , Kiyek V. , Wu K. , Zollner MH. , Ikonik Z. , Schulze J. , Grutzmacher D. , Capellini G. , Oehme M. , Witzens J. , Buca D. :Electrically pumped SiGeSn microring lasers 2022 IEEE Photonics Society Summer Topicals Meeting Series, SUM 2022 (Cabo San Lucas, MEX , 11. Juli 2022 - 13. Juli 2022 )In: 2022 IEEE Photonics Society Summer Topicals Meeting Series, SUM 2022 - Proceedings 2022 DOI: 10.1109/SUM53465.2022.9858260
May A. , Rommel M. , Beuer S. , Erlbacher T. :Via Size-Dependent Properties of TiAl Ohmic Contacts on 4H-SiC In: Materials Science Forum 1062 (2022 ), S. 185-189 ISSN: 0255-5476 DOI: 10.4028/p-36s1w4
Muthumbi AK. :Defect detection in nano-imprint stamps with deep learning and low resolution microscope (Masterarbeit, 2022 )
Schimmel S. , Salamon M. , Tomida D. , Ishiguro T. , Honda Y. , Chichibu SF. , Amano H. :High Energy Computed Tomography as a Tool for Validation of Numerical Simulations of Ammonothermal Crystal Growth of GaN 8th International Workshop on Crystal Growth Technology (Berlin , 29. Mai 2022 - 2. Juni 2022 )
Schimmel S. , Salamon M. , Tomida D. , Kobelt I. , Heinlein L. , Kimmel AC. , Steigerwald T. , Ishiguro T. , Honda Y. , Chichibu SF. , Amano H. , Schlücker E. , Wellmann P. :In Situ Monitoring Technologies as Prospective Validation Tools for Numerical Simulations of Ammonothermal Crystal Growth 7th European Conference on Crystal Growth (Paris , 25. Juli 2022 - 27. Juli 2022 )
Schimmel S. , Salamon M. , Tomida D. , Neumeier S. , Ishiguro T. , Honda Y. , Chichibu SF. , Amano H. :High-Energy Computed Tomography as a Prospective Tool for In Situ Monitoring of Mass Transfer Processes inside High-Pressure Reactors-A Case Study on Ammonothermal Bulk Crystal Growth of Nitrides including GaN In: Materials 15 (2022 ), S. 6165 ISSN: 1996-1944 DOI: 10.3390/ma15176165
Schimmel S. , Sun W. , Dropka N. :Artificial Intelligence for Crystal Growth and Characterization In: Crystals 12 (2022 ), S. 1232 ISSN: 2073-4352 DOI: 10.3390/cryst12091232
Schimmel S. , Tomida D. , Ishiguro T. , Honda Y. , Chichibu SF. , Amano H. :Temperature field and fluid flow in ammonothermal growth of GaN during etch-back and crystal growth for a retrograde solubility configuration International Workshop on Nitride Semiconductors (Berlin , 9. Oktober 2022 - 14. Oktober 2022 )
Sedova V. :Modeling of thick photoresist for grayscale lithography application (Masterarbeit, 2022 )
Seidel L. , Schafer S. , Oehme M. , Buca D. , Capellini G. , Schulze J. , Schwarz D. :Electroluminescence of SixGe1-x-ySny / Ge1-ySny pin-Diodes Grown on a GeSn Buffer 48th IEEE European Solid State Circuits Conference, ESSCIRC 2022 (Milan, ITA , 19. September 2022 - 22. September 2022 )In: ESSCIRC 2022 - IEEE 48th European Solid State Circuits Conference, Proceedings 2022 DOI: 10.1109/ESSCIRC55480.2022.9911458
Szabo M. :Optimierung und Charakterisierung von 2D-Materialien für die Passivierung von schwarzem Phosphor (Masterarbeit, 2022 )
Wanitzek M. , Oehme M. , Spieth C. , Schwarz D. , Seidel L. , Schulze J. :GeSn-on-Si Avalanche Photodiodes for Short-Wave Infrared Detection 48th IEEE European Solid State Circuits Conference, ESSCIRC 2022 (Milan, ITA , 19. September 2022 - 22. September 2022 )In: ESSCIRC 2022 - IEEE 48th European Solid State Circuits Conference, Proceedings 2022 DOI: 10.1109/ESSCIRC55480.2022.9911363
2021
Awad A. , Brendel P. , Evanschitzky P. , Woldeamanual DS. , Rosskopf A. , Erdmann A. :Accurate prediction of EUV lithographic images and 3D mask effects using generative networks In: Journal of Micro-Nanolithography MEMS and MOEMS 20 (2021 )ISSN: 1932-5150 DOI: 10.1117/1.JMM.20.4.043201
Fritsch B. , Hutzler A. , Wu M. , Khadivianazar S. , Vogl L. , Jank MPM. , März M. , Spiecker E. :Accessing local electron-beam induced temperature changes during in situ liquid-phase transmission electron microscopy In: Nanoscale Advances 3 (2021 ), S. 2466 - 2474 ISSN: 2516-0230 DOI: 10.1039/D0NA01027H URL: https://pubs.rsc.org/en/content/articlelanding/2021/NA/D0NA01027H
Fritsch B. , Hutzler A. , Wu M. , Vogl L. , Jank MP. , März M. , Spiecker E. :Beam-induced heating at low electron fluxes during liquid phase transmission electron microscopy In: Microscopy and Microanalysis 27 (2021 ), S. 1040-1042 ISSN: 1431-9276 DOI: 10.1017/S1431927621003937
Fritsch B. , Hutzler A. , Wu M. , Vogl L. , Jank MPM. , März M. , Spiecker E. :Evaluating local temperature changes during liquid cell transmission electron microscopy by in situ parallel beam electron diffraction Virtual Early Career European Microscopy Congress 2020 (Kopenhagen , 24. November 2020 - 26. November 2020 )In: Proceedings of the European Microscopy Congress 2020 2021 DOI: 10.22443/rms.emc2020.253 URL: https://www.emc2020.eu/abstract/evaluating-local-temperature-changes-during-liquid-cell-transmission-electron-microscopy-by-emin-situnbspemparallel-beam-electron-diffraction.html
Geiling J. , Steinberger M. , Ortner F. , Seyfried R. , Nuss A. , Uhrig F. , Lange C. , Oschsner R. , Wasserscheid P. , März M. , Preuster P. :Combined dynamic operation of PEM fuel cell and continuous dehydrogenation of perhydro-dibenzyltoluene In: International Journal of Hydrogen Energy 46 (2021 ), S. 35662-35677 ISSN: 0360-3199 DOI: 10.1016/j.ijhydene.2021.08.034
Gerwig M. , Ali AS. , Neubert D. , Polster S. , Bohme U. , Franze G. , Rosenkranz M. , Popov A. , Ponomarev I. , Jank M. , Viehweger C. , Brendler E. , Frey L. , Kroll P. , Kroke E. :From Cyclopentasilane to Thin-Film Transistors In: Advanced Electronic Materials 7 (2021 ), S. 1-13 ISSN: 2199-160X DOI: 10.1002/aelm.202000422
Hirsch A. , Schulze M. , Sturm F. , Trempa M. , Reimann C. , Friedrich J. :Factors influencing the gas bubble evolution and the cristobalite formation in quartz glass Cz crucibles for Czochralski growth of silicon crystals In: Journal of Crystal Growth 570 (2021 )ISSN: 0022-0248 DOI: 10.1016/j.jcrysgro.2021.126231
Hutzler A. , Fritsch B. , Branscheid R. , Wu M. , Jank M. , Spiecker E. :Direct Manipulation of Nanostructures Utilizing Donut-Shaped Potential Wells during Liquid-Phase Transmission Electron Microscopy Virtual Early Career European Microscopy Congress 2020 DOI: 10.22443/rms.emc2020.158
Johnsson A. , Schmidt G. , Hauf M. , Pichler P. :A Review of Platinum Diffusion in Silicon and Its Application for Lifetime Engineering in Power Devices In: physica status solidi (a) (2021 )ISSN: 1862-6300 DOI: 10.1002/pssa.202100462
Lehninger D. , Ellinger M. , Ali T. , Li S. , Mertens K. , Lederer M. , Olivio R. , Kämpfe T. , Hanisch N. , Biedermann K. , Rudolph M. , Brackmann V. , Sanctis S. , Jank MP. , Seidel K. :A Fully Integrated Ferroelectric Thin-Film-Transistor – Influence of Device Scaling on Threshold Voltage Compensation in Displays In: Advanced Electronic Materials (2021 )ISSN: 2199-160X DOI: 10.1002/aelm.202100082
Meißner E. , Besendörfer S. , Faraji S. , Bahat-Treidel E. , Würfl J. :The long journey from crystal growth to power devices, the role of materials development for III-Nitride semiconductors 2021 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2021 (Virtual, Online , 3. Mai 2021 - 7. Mai 2021 )In: PCIM Europe Conference Proceedings 2021
Meißner E. , Jockel D. , Koch M. , Niewa R. :A New Perspective on Growth of GaN from the Basic Ammonothermal Regime In: Elke Meissner, Rainer Niewa (Hrsg.): Ammonothermal Synthesis and Crystal Growth of Nitrides , Cham : Springer Science and Business Media Deutschland GmbH , 2021 , S. 77-103 (Springer Series in Materials Science, Bd.304)ISBN: 978-3-030-56305-9 DOI: 10.1007/978-3-030-56305-9_6
Nagy R. , Dasari DBR. , Babin C. , Liu D. , Vorobyov V. , Niethammer M. , Widmann M. , Linkewitz T. , Gediz I. , Stoehr R. , Weber HB. , Ohshima T. , Ghezellou M. , Son NT. , Ul-Hassan J. , Kaiser F. , Wrachtrup J. :Narrow inhomogeneous distribution of spin-active emitters in silicon carbide In: Applied Physics Letters 118 (2021 ), S. 144003 ISSN: 0003-6951 DOI: 10.1063/5.0046563
Rafaja D. , Fischer P. , Barchuk M. , Motylenko M. , Roeder C. , Besendoerfer S. , Meißner E. :X-Ray diffraction analysis and modeling of the depth profile of lattice strains in AlGaN stacks In: Thin Solid Films 732 (2021 ), Art.Nr.: 138777 ISSN: 0040-6090 DOI: 10.1016/j.tsf.2021.138777
Rühl M. , Lehmeyer J. , Nagy R. , Weißer M. , Bockstedte M. , Krieger M. , Weber HB. :Removing the orientational degeneracy of the TS defect in 4H-SiC by electric fields and strain In: New Journal of Physics 23 (2021 ), Art.Nr.: 073002 ISSN: 1367-2630 DOI: 10.1088/1367-2630/abfb3e URL: https://iopscience.iop.org/article/10.1088/1367-2630/abfb3e
Schimmel S. , Tomida D. , Ishiguro T. , Honda Y. , Chichibu SF. , Amano H. :Numerical simulation of ammonothermal crystal growth of GaN-current state, challenges, and prospects In: Crystals 11 (2021 ), Art.Nr.: 356 ISSN: 2073-4352 DOI: 10.3390/cryst11040356
Schimmel S. , Tomida D. , Saito M. , Bao Q. , Ishiguro T. , Honda Y. , Chichibu SF. , Amano H. :Boundary conditions for simulations of fluid flow and temperature field during ammonothermal crystal growth—a machine-learning assisted study of autoclave wall temperature distribution In: Crystals 11 (2021 ), S. 1-27 ISSN: 2073-4352 DOI: 10.3390/cryst11030254
Schimmel S. , Tomida D. , Saito M. , Bao Q. , Ishiguro T. , Honda Y. , Chichibu SF. , Amano H. , Wellmann P. :Numerical Simulations of Ammonothermal Crystal Growth of GaN and Pathways towards their Experimental Validation Seminar of the Young Crystal Growers (DGKK) (Berlin , 5. Oktober 2022 - 6. Oktober 2021 )
Schmidt K. , Polzinger B. , Metry M. , Koppe S. , Zimmermann A. :Hybrid Additive Manufacturing by Embedded Electrical Circuits Using 3-D Dispensing In: IEEE Transactions on Components, Packaging and Manufacturing Technology 11 (2021 ), S. 510-521 ISSN: 2156-3950 DOI: 10.1109/TCPMT.2021.3054835
Schnick W. , Cordes N. , Mallmann M. , Niewa R. , Meißner E. :Ammonothermal Materials In: Elke Meissner, Rainer Niewa (Hrsg.): Ammonothermal Synthesis and Crystal Growth of Nitrides , Cham : Springer Science and Business Media Deutschland GmbH , 2021 , S. 329-336 (Springer Series in Materials Science, Bd.304) DOI: 10.1007/978-3-030-56305-9_18
Taherkhani M. , Fritsch B. , Jank MPM. , Spiecker E. , Hutzler A. :Modelling the Radiolysis of Silver Nitrate Solutions in presence of Bromide Ions in Liquid-Phase Transmission Electron Microscopy In: Microscopy and Microanalysis 27 (2021 ), S. 103-104 ISSN: 1431-9276 DOI: 10.1017/S1431927621013519
Toumi S. , Ouennoughi Z. , Weiß R. :Temperature analysis of the Gaussian distribution modeling the barrier height inhomogeneity in the Tungsten/4H-SiC Schottky diode In: Applied Physics A: Materials Science and Processing 127 (2021 ), Art.Nr.: 661 ISSN: 0947-8396 DOI: 10.1007/s00339-021-04787-0
Yu Z. , Yu Z. , Tan YZ. , Bayer CF. , Rauh H. , Schletz A. , März M. , Birlem O. :Cu-Cu Thermocompression Bonding with Cu-Nanowire Films for Power Semiconductor Die-Attach on DBC Substrates 23rd IEEE Electronics Packaging Technology Conference, EPTC 2021 (Virtual, Online, SGP , 1. Dezember 2021 - 30. Dezember 2021 )In: 2021 IEEE 23rd Electronics Packaging Technology Conference, EPTC 2021 2021 DOI: 10.1109/EPTC53413.2021.9663890
2020
Albrecht M. , Klüpfel F. , Erlbacher T. :An Iterative Surface Potential Algorithm Including Interface Traps for Compact Modeling of SiC-MOSFETs In: IEEE Transactions on Electron Devices 67 (2020 ), S. 855-862 ISSN: 0018-9383 DOI: 10.1109/TED.2020.2967507
Albrecht M. , Pérez D. , Martens R. , Bauer AJ. , Erlbacher T. :Impact of channel implantation on a 4h-sic cmos operational amplifier for high temperature applications 18th International Conference on Silicon Carbide and Related Materials, ICSCRM 2019 (Kyoto , 29. September 2019 - 4. Oktober 2019 )In: Hiroshi Yano, Takeshi Ohshima, Kazuma Eto, Takeshi Mitani, Shinsuke Harada, Yasunori Tanaka (Hrsg.): Materials Science Forum 2020 DOI: 10.4028/www.scientific.net/MSF.1004.1123
Bejenari I. , Burenkov A. , Pichler P. , Deretzis I. , La Magna A. :Molecular dynamics modeling of the radial heat transfer from silicon nanowires 2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020 (, 3. September 2020 - 6. Oktober 2020 )In: International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020 DOI: 10.23919/SISPAD49475.2020.9241646
Besendörfer S. , Meißner E. , Medjdoub F. , Derluyn J. , Friedrich J. , Erlbacher T. :The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors In: Scientific Reports 10 (2020 ), Art.Nr.: 17252 ISSN: 2045-2322 DOI: 10.1038/s41598-020-73977-2
Besendörfer S. , Meißner E. , Tajalli A. , Meneghini M. , Freitas JA. , Derluyn J. , Medjdoub F. , Meneghesso G. , Friedrich J. , Erlbacher T. :Vertical breakdown of GaN on Si due to V-pits In: Journal of Applied Physics 127 (2020 ), Art.Nr.: 015701 ISSN: 0021-8979 DOI: 10.1063/1.5129248
Besendörfer S. , Meißner E. , Zweipfennig T. , Yacoub H. , Fahle D. , Behmenburg H. , Kalisch H. , Vescan A. , Friedrich J. , Erlbacher T. :Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures In: AIP Advances 10 (2020 ), Art.Nr.: 045028 ISSN: 2158-3226 DOI: 10.1063/1.5141905
Boettcher N. , Erlbacher T. :Design Considerations on a Monolithically Integrated, Self Controlled and Regenerative 900 V SiC Circuit Breaker 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020 (Suita , 23. September 2020 - 25. September 2020 )In: 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020 2020 DOI: 10.1109/WiPDAAsia49671.2020.9360279
Di Benedetto L. , Licciardo GD. , Erlbacher T. , Bauer AJ. , Rubino A. :A 4H-SiC UV Phototransistor with Excellent Optical Gain Based on Controlled Potential Barrier In: IEEE Transactions on Electron Devices 67 (2020 ), S. 154-159 ISSN: 0018-9383 DOI: 10.1109/TED.2019.2950986
Faraji S. , Meißner E. , Weingärtner R. , Besendörfer S. , Friedrich J. :In-situ preparation of gan sacrificial layers on sapphire substrate in movpe reactor for self-separation of the overgrown gan crystal In: Crystals 10 (2020 ), S. 1-11 ISSN: 2073-4352 DOI: 10.3390/cryst10121100
Hellinger C. , Rusch O. , Rommel M. , Bauer AJ. , Erlbacher T. :Low-resistance ohmic contact formation by laser annealing of N-implanted 4H-SiC In: Hiroshi Yano, Takeshi Ohshima, Kazuma Eto, Takeshi Mitani, Shinsuke Harada, Yasunori Tanaka (Hrsg.): Materials Science Forum 2020 DOI: 10.4028/www.scientific.net/MSF.1004.718
Hessler S. , Knopf S. , Rommel M. , Girschikofsky M. , Schmauß B. , Hellmann R. :Advancing the sensitivity of integrated epoxy-based Bragg grating refractometry by high-index nanolayers In: Optics Letters 45 (2020 ), S. 5510-5513 ISSN: 0146-9592 DOI: 10.1364/OL.402768
Hutzler A. , Fritsch B. , Matthus C. , Jank MPM. , Rommel M. :Highly Accurate Determination of Heterogeneously Stacked Van-der-Waals Materials by Optical Microspectroscopy In: Scientific Reports 10 (2020 ), Art.Nr.: 13676 ISSN: 2045-2322 DOI: 10.1038/s41598-020-70580-3 URL: https://www.nature.com/articles/s41598-020-70580-3
Kazantsev D. , Ryssel H. :ASNOM mapping of SiC epilayer doping profile and of surface phonon polariton waveguiding In: Journal of Applied Physics 127 (2020 )ISSN: 0021-8979 DOI: 10.1063/1.5128104
Kocher M. , Schlichting H. , Kallinger B. , Rommel M. , Bauer AJ. , Erlbacher T. :Influence of shallow pits and device design of 4H-SiC VDMOS transistors on in-line defect analysis by photoluminescence and differential interference contrast mapping 18th International Conference on Silicon Carbide and Related Materials, ICSCRM 2019 (Kyoto , 29. September 2019 - 4. Oktober 2019 )In: Hiroshi Yano, Takeshi Ohshima, Kazuma Eto, Takeshi Mitani, Shinsuke Harada, Yasunori Tanaka (Hrsg.): Materials Science Forum 2020 DOI: 10.4028/www.scientific.net/MSF.1004.299
Morioka N. , Babin C. , Nagy R. , Gediz I. , Hesselmeier E. , Liu D. , Joliffe M. , Niethammer M. , Dasari D. , Vorobyov V. , Kolesov R. , Stoehr R. , Ul-Hassan J. , Nguyen Tien Son . , Ohshima T. , Udvarhelyi P. , Thiering G. , Gali A. , Wrachtrup J. , Kaiser F. :Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide In: Nature Communications 11 (2020 ), Art.Nr.: 2516 ISSN: 2041-1723 DOI: 10.1038/s41467-020-16330-5
Rickert L. , Fritsch B. , Kors A. , Reithmaier JP. , Benyoucef M. :Mode properties of telecom wavelength InP-based high-(Q/V) L4/3 photonic crystal cavities In: Nanotechnology 31 (2020 ), Art.Nr.: 315703 ISSN: 1361-6528 DOI: 10.1088/1361-6528/ab8a8c URL: https://iopscience.iop.org/article/10.1088/1361-6528/ab8a8c
Rusch O. , Hellinger C. , Moult J. , Corcoran Y. , Erlbacher T. :Reducing on-resistance for SiC diodes by thin wafer and laser anneal technology 18th International Conference on Silicon Carbide and Related Materials, ICSCRM 2019 (Kyoto , 29. September 2019 - 4. Oktober 2019 )In: Hiroshi Yano, Takeshi Ohshima, Kazuma Eto, Takeshi Mitani, Shinsuke Harada, Yasunori Tanaka (Hrsg.): Materials Science Forum 2020 DOI: 10.4028/www.scientific.net/MSF.1004.155
Toumi S. , Ouennoughi Z. , Murakami K. :Effect of temperature on the Fowler-Nordheim barrier height, flat band potentials and electron/hole effective masses in the MOS capacitors In: Physica B-Condensed Matter 585 (2020 ), Art.Nr.: 412125 ISSN: 0921-4526 DOI: 10.1016/j.physb.2020.412125
Wankerl H. , Stern M. , Altieri-Weimar P. , Al-Baddai S. , Lang KJ. , Roider F. , Lang EW. :Fully convolutional networks for void segmentation in X-ray images of solder joints In: Journal of Manufacturing Processes 57 (2020 ), S. 762-767 ISSN: 1526-6125 DOI: 10.1016/j.jmapro.2020.07.021
Weiße J. , Matthus C. , Schlichting H. , Mitlehner H. , Erlbacher T. :RESURF n-LDMOS Transistor for Advanced Integrated Circuits in 4H-SiC In: IEEE Transactions on Electron Devices 67 (2020 ), S. 3278-3284 ISSN: 0018-9383 DOI: 10.1109/TED.2020.3002730
Wicht T. , Mueller S. , Weingaertner R. , Epelbaum B. , Besendoerfer S. , Blaess U. , Weißer M. , Unruh T. , Meißner E. :X-ray characterization of physical-vapor-transport-grown bulk AlN single crystals In: Journal of Applied Crystallography 53 (2020 ), S. 1080-1086 ISSN: 0021-8898 DOI: 10.1107/S1600576720008961
Yu Z. , Zeng W. , Zhao D. , Zhang Z. , Bayer CF. , Schletz A. , März M. :Reliability of silver direct bonding in thermal cycling tests 8th IEEE Electronics System-Integration Technology Conference, ESTC 2020 (Tonsberg, Vestfold , 15. September 2020 - 18. September 2020 )In: Proceedings - 2020 IEEE 8th Electronics System-Integration Technology Conference, ESTC 2020 2020 DOI: 10.1109/ESTC48849.2020.9229753
Zhao D. , Letz S. , Schletz A. , März M. :A Method for the Characterization of Adhesion Strength Degradation of Thin Films on Si-Substrate under thermal cycling test 2020 CIPS (Berlin , 24. März 2020 - 26. März 2020 )
Zhao D. , Letz S. , Yu Z. , Schletz A. , März M. :Combined experimental and numerical approach for investigating the mechanical degradation of the interface between thin film metallization and Si-substrate after temperature cycling test In: Microelectronics Reliability (2020 )ISSN: 0026-2714 DOI: 10.1016/j.microrel.2020.113785
Zhao Y. , Miao P. , Elia J. , Hu H. , Wang X. , Heumüller T. , Hou Y. , Matt G. , Osvet A. , Chen YT. , Tarragó M. , de Ligny D. , Przybilla T. , Denninger P. , Will J. , Zhang J. , Tang X. , Li N. , He C. , Pan A. , Meixner AJ. , Spiecker E. , Zhang D. , Brabec C. :Strain-activated light-induced halide segregation in mixed-halide perovskite solids In: Nature Communications 11 (2020 ), Art.Nr.: 6328 ISSN: 2041-1723 DOI: 10.1038/s41467-020-20066-7
Zimmermann V. , Zörner A. , Chen W. , Yu Z. , Jank M. , Bayer C. , Schletz A. , März M. :Integration of printed electronics with potted power electronic modules 11th International Conference on Integrated Power Electronics Systems, CIPS 2020 (Berlin , 24. März 2020 - 26. März 2020 )In: CIPS 2020 - 11th International Conference on Integrated Power Electronics Systems 2020
2019
Albrecht M. , Erlbacher T. , Bauer A. , Frey L. :Improving 5V digital 4H-SIC CMOS ics for operating at 400°C using PMOS channel implantation In: Materials Science Forum (2019 ), S. 827-831 ISSN: 0255-5476 DOI: 10.4028/www.scientific.net/MSF.963.827
Beljakowa S. , Pichler P. , Kalkofen B. , Hübner R. :Diffusion of Phosphorus and Boron from Atomic Layer Deposition Oxides into Silicon In: physica status solidi (a) 216 (2019 ), Art.Nr.: 1900306 ISSN: 1862-6300 DOI: 10.1002/pssa.201900306
Boettcher N. , Heckel T. , Erlbacher T. , Pelaic K. :Silicon RC-Snubber for 900 V Applications Utilising non-Stoichiometric Silicon Nitride 31st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) (Shanghai , 19. Mai 2019 - 23. Mai 2019 )In: 31st International Symposium on Power Semiconductor Devices & ICs , NEW YORK : 2019 DOI: 10.1109/ISPSD.2019.8757589
Chen YC. , Salter PS. , Niethammer M. , Widmann M. , Kaiser F. , Nagy R. , Morioka N. , Babin C. , Erlekampf J. , Berwian P. , Booth MJ. , Wrachtrup J. :Laser Writing of Scalable Single Color Centers in Silicon Carbide In: Nano Letters 19 (2019 ), S. 2377-2383 ISSN: 1530-6984 DOI: 10.1021/acs.nanolett.8b05070
Di Benedetto L. , Matthus C. , Erlbacher T. , Bauer AJ. , Licciardo GD. , Rubino A. , Frey L. :Performance of 4H-SIC bipolar diodes as temperature sensor at low temperatures 12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018 (Birmingham , 2. September 2018 - 6. September 2018 )In: Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (Hrsg.): Materials Science Forum 2019 DOI: 10.4028/www.scientific.net/MSF.963.572
Erdmann A. , Evanschitzky P. , Mesilhy HMS. , Philipsen V. , Hendrickx E. , Bauer M. :Attenuated phase shift mask for extreme ultraviolet: Can they mitigate three-dimensional mask effects? In: Journal of Micro-Nanolithography MEMS and MOEMS 18 (2019 ), Art.Nr.: 011005 ISSN: 1932-5150 DOI: 10.1117/1.JMM.18.1.011005
Erlekampf J. , Kallinger B. , Weiße J. , Rommel M. , Berwian P. , Friedrich J. , Erlbacher T. :Deeper insight into lifetime-engineering in 4H-SiC by ion implantation In: Journal of Applied Physics 126 (2019 ), Art.Nr.: 045701 ISSN: 0021-8979 DOI: 10.1063/1.5092429
Fedorova N. , Macher P. , Jovicic V. , Zbogar-Rasic A. , Delgado A. :Experimental investigation of the gravity influence on the condensation behaviour on Al and PTFE-samples 27. GALA-Fachtagung "Experimentelle Strömungsmechanik" (Erlangen , 3. September 2019 - 5. September 2019 )In: A. Delgado, B. Gatternig, M. Münsch, B. Ruck, A. Leder (Hrsg.): Proceedings der 27. GALA-Fachtagung "Experimentelle Strömungsmechanik" 2019
Grünler S. , Rattmann G. , Erlbacher T. , Bauer AJ. , Krach F. , Frey L. :Towards highly integrated, automotive power SoCs using capacitors operating at 100 V implemented in TSV 9th International Conference on Integrated Power Electronics Systems, CIPS 2016 (Nuremberg, DEU , 8. März 2016 - 10. März 2016 )In: CIPS 2016 - 9th International Conference on Integrated Power Electronics Systems 2019
Hutzler A. , Fritsch B. , Jank M. , Branscheid R. , Martens R. , Spiecker E. , März M. :In Situ Liquid Cell TEM Studies on Etching and Growth Mechanisms of Gold Nanoparticles at a Solid-Liquid-Gas Interface In: Advanced Materials Interfaces 6 (2019 ), Art.Nr.: 1901027 ISSN: 2196-7350 DOI: 10.1002/admi.201901027 URL: https://www.onlinelibrary.wiley.com/doi/10.1002/admi.201901027
Hutzler A. , Fritsch B. , Jank MPM. , Branscheid R. , Spiecker E. , März M. :Preparation of Graphene-Supported Microwell Liquid Cells for In Situ Transmission Electron Microscopy In: Journal of Visualized Experiments (2019 ), Art.Nr.: e59751 ISSN: 1940-087X DOI: 10.3791/59751 URL: https://www.jove.com/video/59751/preparation-graphene-supported-microwell-liquid-cells-for-situ?status=a61757k
Hutzler A. , Matthus C. , Dolle C. , Rommel M. , Jank MPM. , Spiecker E. , Frey L. :Large-Area Layer Counting of Two-Dimensional Materials Evaluating the Wavelength Shift in Visible-Reflectance Spectroscopy In: Journal of Physical Chemistry C 123 (2019 ), S. 9192 - 9201 ISSN: 1932-7447 DOI: 10.1021/acs.jpcc.9b00957 URL: https://pubs.acs.org/doi/10.1021/acs.jpcc.9b00957
Kocher M. , Yao B. , Weiße J. , Rommel M. , Xu ZW. , Erlbacher T. , Bauer A. :Determination of compensation ratios of al-implanted 4H-SIC by tcad modelling of TLM measurements 12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018 (Birmingham , 2. September 2018 - 6. September 2018 )In: Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (Hrsg.): Materials Science Forum 2019 DOI: 10.4028/www.scientific.net/MSF.963.445
Matlok S. , Boettcher N. , Jahn M. , Hörauf P. , Erlbacher T. , Eckardt B. :Retrofitting Wide Band Gap Devices to classic Power Modules using Silicon RC Snubbers 2019 PCIM Europe (Nürnberg , 7. Mai 2019 - 9. Mai 2019 ) URL: https://www.researchgate.net/publication/331642497_Retrofitting_Wide_Band_Gap_Devices_to_classic_Power_Modules_using_Silicon_RC_Snubbers
Matthus CD. , Bauer AJ. , Frey L. , Erlbacher T. :Wavelength-selective 4H-SiC UV-sensor array In: Materials Science in Semiconductor Processing 90 (2019 ), S. 205-211 ISSN: 1369-8001 DOI: 10.1016/j.mssp.2018.10.019
Matthus CD. , Di Benedetto L. , Kocher M. , Bauer AJ. , Licciardo GD. , Rubino A. , Erlbacher T. :Feasibility of 4H-SiC p-i-n Diode for Sensitive Temperature Measurements Between 20.5 K and 802 K In: IEEE Sensors Journal 19 (2019 ), S. 2871-2878 ISSN: 1530-437X DOI: 10.1109/JSEN.2019.2891293
Pichler P. , Sledziewski T. , Häublein V. , Bauer AJ. , Erlbacher T. :Channeling in 4H-SiC from an application point of view 12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018 (Birmingham , 2. September 2018 - 6. September 2018 )In: Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (Hrsg.): Materials Science Forum 2019 DOI: 10.4028/www.scientific.net/MSF.963.386
Rattmann G. , Pichler P. , Erlbacher T. :On a Novel Source Technology for Deep Aluminum Diffusion for Silicon Power Electronics In: physica status solidi (a) 216 (2019 ), Art.Nr.: 1900167 ISSN: 1862-6300 DOI: 10.1002/pssa.201900167
Rusch O. , Moult J. , Erlbacher T. :Influence of trench design on the electrical properties of 650v 4H-SIC JBS diodes 12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018 (Birmingham , 2. September 2018 - 6. September 2018 )In: Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (Hrsg.): Materials Science Forum 2019 DOI: 10.4028/www.scientific.net/MSF.963.549
Schlichting H. , Sledziewski T. , Bauer AJ. , Erlbacher T. :Design considerations for robust manufacturing and high yield of 1.2 kv 4H-SIC VDMOS transistors 12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018 (Birmingham , 2. September 2018 - 6. September 2018 )In: Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (Hrsg.): Materials Science Forum 2019 DOI: 10.4028/www.scientific.net/MSF.963.763
Schriefer T. , Hofmann M. :A hybrid frequency-time-domain approach to determine the vibration fatigue life of electronic devices In: Microelectronics Reliability 98 (2019 ), S. 86-94 ISSN: 0026-2714 DOI: 10.1016/j.microrel.2019.04.001
Schriefer T. , Hofmann M. , Rauh H. , Eckardt B. , März M. :Parameter study on the electrical contact resistance of axially canted coil springs for high-current systems 2018 29th International Conference on Electrical Contacts together with 64th IEEE Holm Conference on Electrical Contacts (Albuquerque, NM , 14. Oktober 2018 - 18. Oktober 2018 ) DOI: 10.1109/HOLM.2018.8611640
Stolzke T. , Dirnecker T. , Schwarz J. , Frey L. :Investigation of magnetic properties from a manganese-zinc-ferrite polymer bonded material In: International Journal of Applied Electromagnetics and Mechanics 59 (2019 ), S. 97-104 ISSN: 1383-5416 DOI: 10.3233/JAE-171244
Stolzke T. , Ehrlich S. , Joffe C. , März M. :Comprehensive accuracy examination of electrical power loss measurements of inductive components for frequencies up to 1 MHz In: Journal of Magnetism and Magnetic Materials 497 (2019 ), Art.Nr.: 166022 ISSN: 0304-8853 DOI: 10.1016/j.jmmm.2019.166022
Udvarhelyi P. , Nagy R. , Kaiser F. , Lee SY. , Wrachtrup J. , Gali A. :Spectrally Stable Defect Qubits with no Inversion Symmetry for Robust Spin-To-Photon Interface In: Physical Review Applied 11 (2019 ), Art.Nr.: 044022 ISSN: 2331-7019 DOI: 10.1103/PhysRevApplied.11.044022
Weiße J. , Hauck M. , Krieger M. , Bauer A. , Erlbacher T. :Aluminum acceptor activation and charge compensation in implanted p-type 4H-SiC In: AIP Advances 9 (2019 ), S. 055308 ISSN: 2158-3226 DOI: 10.1063/1.5096440
Weiße J. , Hauck M. , Krieger M. , Bauer AJ. , Erlbacher T. :Publisher's Note: Aluminum acceptor activation and charge compensation in implanted p-type 4H-SiC (AIP Advances (2019) 9 (055308) DOI: 10.1063/1.5096440) In: AIP Advances 9 (2019 ), Art.Nr.: 079901 ISSN: 2158-3226 DOI: 10.1063/1.5118666
Weiße J. , Hauck M. , Sledziewski T. , Krieger M. , Bauer A. , Mitlehner H. , Frey L. , Erlbacher T. :On the origin of charge compensation in aluminum-implanted n-type 4H-SiC by analysis of hall effect measurements 12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018 (Birmingham , 2. September 2018 - 6. September 2018 )In: Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (Hrsg.): Materials Science Forum 2019 DOI: 10.4028/www.scientific.net/MSF.963.433
Weiße J. , Mitlehner H. , Frey L. , Erlbacher T. :Design of a 4H-SIC resurf N-LDMOS transistor for high voltage integrated circuits 12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018 (Birmingham , 2. September 2018 - 6. September 2018 )In: Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (Hrsg.): Materials Science Forum 2019 DOI: 10.4028/www.scientific.net/MSF.963.629
Śledziewski T. , Erlbacher T. , Bauer A. , Frey L. , Chen X. , Zhao Y. , Li C. , Dai X. :Comparison between NI-SALICIDE and self-aligned lift-off used in fabrication of ohmic contacts for sic power MOSFET 12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018 (Birmingham , 2. September 2018 - 6. September 2018 )In: Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (Hrsg.): Materials Science Forum 2019 DOI: 10.4028/www.scientific.net/MSF.963.490
2018
Bilbao-Guillerna A. , Thiruvallur Eachambadi R. , Cadot GBJ. , Axinte DA. , Billingham J. , Stumpf F. , Stumpf F. , Beuer S. , Rommel M. :Novel Approach Based on Continuous Trench Modelling to Predict Focused Ion Beam Prepared Freeform Surfaces In: Journal of Materials Processing Technology (2018 )ISSN: 0924-0136 DOI: 10.1016/j.jmatprotec.2017.10.024
Distler F. , Oppelt D. , Schür J. , Vossiek M. :Design and characterization of a compact and robust shielded dielectric waveguide for mmW applications In: Proceedings of the GeMiC 2018 - The 11th German Microwave Conference (GeMiC 2018) 2018 DOI: 10.23919/gemic.2018.8335108
Erlbacher T. , Huerner A. , Zhu Y. , Bach L. , Schletz A. , Zuerbig V. , Pinti L. , Kirste L. , Giese C. , Nebel CE. , Bauer AJ. , Frey L. :Electrical properties of schottky-diodes based on B doped diamond International Conference on Silicon Carbide and Related Materials, ICSCRM 2017 DOI: 10.4028/www.scientific.net/MSF.924.931
Erlekampf J. , Kaminzky D. , Rosshirt K. , Kallinger B. , Rommel M. , Berwian P. , Friedrich J. , Frey L. :Influence and mutual interaction of process parameters on the Z1/2defect concentration during epitaxy of 4H-SiC International Conference on Silicon Carbide and Related Materials, ICSCRM 2017 DOI: 10.4028/www.scientific.net/MSF.924.112
Förthner M. , Girschikofsky M. , Rumler M. , Stumpf F. , Rommel M. , Hellmann R. , Frey L. :One-step nanoimprinted Bragg grating sensor based on hybrid polymers In: Sensors and Actuators A-Physical 283 (2018 ), S. 298-304 ISSN: 0924-4247 DOI: 10.1016/j.sna.2018.09.053
Girschikofsky MG. , Rosenberger M. , Förthner M. , Rommel M. , Frey L. , Hellmann R. :Flexible thin film bending sensor based on Bragg gratings in hybrid polymers Optical Sensing and Detection V 2018 DOI: 10.1117/12.2303820
Huerner A. , Heckel T. , Endruschat A. , Erlbacher T. , Bauer AJ. , Frey L. :Analytical model for the influence of the gate-voltage on the forward conduction properties of the body-diode in SiC-MOSFETs International Conference on Silicon Carbide and Related Materials, ICSCRM 2017 DOI: 10.4028/www.scientific.net/MSF.924.901
Hutzler A. :Development of advanced liquid cell architectures for high performance in situ transmission electron microscopy in materials sciences (Dissertation, 2018 ) URL: https://opus4.kobv.de/opus4-fau/frontdoor/index/index/docId/10092
Hutzler A. , Matthus C. , Rommel M. , Jank M. , Frey L. :Large-Area Layer Counting of 2D Materials via Visible Reflection Spectroscopy 19th International Microscopy Congress (IMC19) (Sydney , 9. September 2018 - 14. September 2018 ) URL: https://abstracts.imc19.com/pdf/abstract_497.pdf
Hutzler A. , Schmutzler T. , Jank MPM. , Branscheid R. , Unruh T. , Spiecker E. , Frey L. :Unravelling the Mechanisms of Gold−Silver Core−Shell Nanostructure Formation by in Situ TEM Using an Advanced Liquid Cell Design In: Nano Letters 18 (2018 ), S. 7222 - 7229 ISSN: 1530-6984 DOI: 10.1021/acs.nanolett.8b03388 URL: https://pubs.acs.org/doi/10.1021/acs.nanolett.8b03388
Kalkofen B. , Ahmed B. , Beljakowa S. , Lisker M. , Kim YS. , Burte EP. :Atomic layer deposition of phosphorus oxide films as solid sources for doping of semiconductor structures 18th IEEE International Conference on Nanotechnology (IEEE-NANO) (Cork , 23. Juli 2018 - 26. Juli 2018 )In: 2018 IEEE 18TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO) , NEW YORK : 2018
Lomakin K. , Pavlenko T. , Ankenbrand M. , Sippel M. , Ringel J. , Scheetz M. , Klemm T. , Gräf D. , Helmreich K. , Franke J. , Gold G. :Evaluation and Characterization of 3D Printed Pyramid Horn Antennas utilizing different Deposition Techniques for Conductive Material In: IEEE Transactions on Components, Packaging and Manufacturing Technology (2018 ), S. 1-1 ISSN: 2156-3950 DOI: 10.1109/tcpmt.2018.2871931
Matthus C. , Hürner A. , Erlbacher T. , Bauer AJ. , Frey L. :Evidence of low injection efficiency for implanted p-emitters in bipolar 4H-SiC high-voltage diodes In: Solid-State Electronics (2018 ), S. 101-105 ISSN: 0038-1101 DOI: 10.1016/j.sse.2018.03.010
Nagy R. , Widmann M. , Niethammer M. , Dasari DBR. , Gerhardt I. , Soykal OO. , Radulaski M. , Ohshima T. , Vuckovic J. , Nguyen Tien Son . , Ivanov IG. , Economou SE. , Bonato C. , Lee SY. , Wrachtrup J. :Quantum Properties of Dichroic Silicon Vacancies in Silicon Carbide In: Physical Review Applied 9 (2018 ), Art.Nr.: 034022 ISSN: 2331-7019 DOI: 10.1103/PhysRevApplied.9.034022
Nouibat TH. , Messai Z. , Chikouch D. , Ouennoughi Z. , Rouag N. , Rommel M. , Frey L. :Normalized differential conductance to study current conduction mechanisms in MOS structures In: Microelectronics Reliability 91 (2018 ), S. 183-187 ISSN: 0026-2714 DOI: 10.1016/j.microrel.2018.10.001
Rosenberger M. , Girschikofsky M. , Förthner M. , Belle S. , Rommel M. , Frey L. , Schmauß B. , Hellmann R. :TiO2 surface functionalization of COC based planar waveguide Bragg gratings for refractive index sensing In: Journal of Optics 20 (2018 ), Art.Nr.: 01LT02 ISSN: 2040-8978 DOI: 10.1088/2040-8986/aa9bcf
Scharin-Mehlmann M. , Häring A. , Rommel M. , Dirnecker T. , Friedrich O. , Frey L. , Gilbert D. :Nano- and micro-patterned S-, H-, and X-PDMS for cell-based applications: Comparison of wettability, roughness, and cell-derived parameters In: Frontiers in Bioengineering and Biotechnology 6 (2018 ), Art.Nr.: 51 ISSN: 2296-4185 DOI: 10.3389/fbioe.2018.00051
Schneidereit D. , Tschernich J. , Friedrich O. , Scharin-Mehlmann M. , Gilbert D. :3D-Printed Reusable Cell Culture Chamber with Integrated Electrodes for Electrical Stimulation and Parallel Microscopic Evaluation In: 3D Printing and Additive Manufacturing 5 (2018 ), S. 115-125 ISSN: 2329-7662 DOI: 10.1089/3dp.2017.0103
Schriefer T. , Hofmann M. :Assessing the vibrational response and robustness of electronic systems by dissolving time and length scale 19th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) (Toulouse , 15. April 2018 - 18. April 2018 ) DOI: 10.1109/EuroSimE.2018.8369868 URL: https://ieeexplore.ieee.org/document/8369868
Schriefer T. , Hofmann M. , März M. :Vibrational resistance investigation of an IGBT gate driver utilizing Frequency Response Analysis (FRA) and Highly Accelerated Life Test (HALT) 2018 10th International Conference on Integrated Power Electronics Systems (CIPS) (Stuttgart , 20. März 2018 - 22. März 2018 ) URL: https://ieeexplore.ieee.org/document/8403138
Schrüfer D. , Ellinger M. , Jank M. , Frey L. , Weigel R. , Hagelauer AM. :Circuits with Scaled Metal Oxide Technology for Future TOLAE RF Systems European Microwave Conference (Madrid , 23. September 2018 - 28. September 2018 )In: Proceedings of the 48th European Microwave Conference 2018
Steinberger M. , Geiling J. , Oechsner R. , Frey L. :Anode recirculation and purge strategies for PEM fuel cell operation with diluted hydrogen feed gas In: Applied Energy 232 (2018 ), S. 572-582 ISSN: 0306-2619 DOI: 10.1016/j.apenergy.2018.10.004
Stolzke T. , Dirnecker T. , Schwarz J. , Frey L. :Investigation of magnetic properties from a manganese–zinc–ferrite polymer bonded material In: International Journal of Applied Electromagnetics and Mechanics Pre-press (2018 ), S. 1-8 ISSN: 1383-5416 DOI: 10.3233/JAE-171244
Unterreitmeier M. , Nagler O. , Pfitzner L. , Weigel R. , Holmer R. :An acoustic emmission sensor system for thin layer crack detection 29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (Aalborg , 1. Oktober 2018 - 5. Oktober 2018 )
Weiße J. , Hauck M. , Sledziewski T. , Tschiesche M. , Krieger M. , Bauer A. , Mitlehner H. , Frey L. , Erlbacher T. :Analysis of Compensation Effects in Aluminum-Implanted 4H-SiC Devices In: Materials Science Forum 924 (2018 ), S. 184-187 ISSN: 0255-5476 DOI: 10.4028/www.scientific.net/MSF.924.184
Yu Z. , Zeltner S. , Boettcher N. , Rattmann G. , Leib J. , Bayer C. , Schletz A. , Erlbacher T. , Frey L. :Heterogeneous Integration of Vertical GaN Power Transistor on Si Capacitor for DC-DC Converters 7th Electronic System-Integration Technology Conference, ESTC 2018 DOI: 10.1109/ESTC.2018.8546362
Zörner A. , Oertel S. , Jank M. , Frey L. , Langenstein B. , Bertsch T. :Human Sweat Analysis Using a Portable Device Based on a Screen-printed Electrolyte Sensor In: Electroanalysis 30 (2018 ), S. 665-671 ISSN: 1040-0397 DOI: 10.1002/elan.201700672
2017
Albrecht M. , Hürner A. , Erlbacher T. , Bauer A. , Frey L. :Experimental verification of a self-triggered solid-state circuit breaker based on a SiC BIFET In: Materials Science Forum 897 (2017 ), S. 665-668 ISSN: 0255-5476 DOI: 10.4028/www.scientific.net/MSF.897.665
Banzhaf S. , Kenntner J. , Grieb M. , Schwaiger S. , Erlbacher T. , Bauer AJ. , Frey L. :Stress reduction in high voltage MIS capacitor fabrication 19th International Symposium on Power Electronics, Ee 2017 DOI: 10.1109/PEE.2017.8171664
Förthner M. , Papenheim M. , Rumler M. , Stumpf F. , Baier L. , Rommel M. , Scheer HC. , Frey L. :Polymerization related deformations in multilayer soft stamps for nanoimprint In: Journal of Applied Physics 122 (2017 ), Art.Nr.: 165305 ISSN: 0021-8979 DOI: 10.1063/1.5001463
Girschikofsky MG. , Förthner M. , Rommel M. , Frey L. , Hellmann R. :Fabrication of Bragg grating sensors in UV-NIL structured Ormocer waveguides Integrated Optics: Devices, Materials, and Technologies XXI 2017 DOI: 10.1117/12.2249665
Girschikofsky MG. , Rosenberger M. , Förthner M. , Rommel M. , Frey L. , Hellmann R. :Waveguide Bragg Gratings in Ormocer®s for Temperature Sensing In: Sensors 17 (2017 ), Art.Nr.: 2459 ISSN: 1424-8220 DOI: 10.3390/s17112459
Hutzler A. , Branscheid R. , Schmutzler T. , Jank M. , Frey L. , Spiecker E. :Controlled silver-shell growth on gold nanorods studied by in situ liquid cell TEM techniques Microscopy Conference 2017 (Lausanne , 21. August 2017 - 25. August 2017 )In: Microscopy Conference 2017 (MC 2017) - Proceedings 2017 URL: https://epub.uni-regensburg.de/36099/
Hutzler A. , Matthus C. , Rommel M. , Frey L. :Generalized approach to design multi-layer stacks for enhanced optical detectability of ultrathin layers In: Applied Physics Letters 110 (2017 ), Art.Nr.: 021909 ISSN: 0003-6951 DOI: 10.1063/1.4973968
Häublein V. , Birnbaum E. , Ryssel H. , Frey L. , Djupmyr M. :Ion Implantation of Polypropylene Films for the Manufacture of Thin Film Capacitors 21st International Conference on Ion Implantation Technology, IIT 2016 DOI: 10.1109/IIT.2016.7882887
Hürner A. , Erlbacher T. , Bauer A. , Frey L. :Monolithically integrated solid-state-circuit-breaker for high power applications 11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016 DOI: 10.4028/www.scientific.net/MSF.897.661
Matthus C. , Burenkov A. , Erlbacher T. :Optimization of 4H-SiC photodiodes as selective UV sensors In: Materials Science Forum (2017 ), S. 622-625 ISSN: 0255-5476 DOI: 10.4028/www.scientific.net/MSF.897.622
Matthus C. , Erlbacher T. , Hess A. , Bauer AJ. , Frey L. :Advanced 4H-SiC p-i-n Diode as Highly Sensitive High-Temperature Sensor Up To 460 °C In: IEEE Transactions on Electron Devices 64 (2017 ), S. 3399-3404 ISSN: 0018-9383 DOI: 10.1109/TED.2017.2711271
Matthus C. , Erlbacher T. , Schöfer B. , Bauer A. , Frey L. :Implementation of 4H-SiC PiN-diodes as nearly linear temperature sensors up to 800 K towards SiC multi-sensor integration In: Materials Science Forum (2017 ), S. 618-621 ISSN: 0255-5476 DOI: 10.4028/www.scientific.net/MSF.897.618
Meister T. , Ellinger F. , Bartha JW. , Berroth M. , Burghartz J. , Claus M. , Frey L. , Gagliardi A. , Grundmann M. , Hesselbarth J. , Klauk H. , Leo K. , Lugli P. , Mannsfeld S. , Manoli Y. , Negra R. , Neumaier D. , Pfeiffer U. , Riedl T. , Scheinert S. , Scherf U. , Thiede A. , Tröster G. , Vossiek M. , Weigel R. , Wenger C. , Alavi G. , Becherer M. , Chavarin CA. , Darwish M. , Ellinger M. , Fan CY. , Fritsch M. , Grotjahn F. , Gunia M. , Haase K. , Hillger P. , Ishida K. , Jank M. , Knobelspies S. , Kuhl M. , Lupina G. , Naghadeh SM. , Münzenrieder N. , Özbek S. , Rasteh M. , Salvatore GA. , Schrüfer D. , Strobel C. , Theisen M. , Tuckmantel C. , Von Wenckstern H. , Wang Z. , Zhang Z. :Program FFlexCom - High frequency flexible bendable electronics for wireless communication systems In: 2017 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS) 2017 DOI: 10.1109/COMCAS.2017.8244733
Rosenberger M. , Roth G-. , Adelmann B. , Schmauß B. , Hellmann R. :Temperature Referenced Planar Bragg Grating Strain Sensor in fs-Laser Cut COC Specimen In: IEEE Photonics Technology Letters (2017 )ISSN: 1041-1135 DOI: 10.1109/LPT.2017.2693401
Schimmel S. , Koch M. , Macher P. , Kimmel AC. , Steigerwald T. , Alt N. , Schlücker E. , Wellmann P. :Solubility and dissolution kinetics of GaN in supercritical ammonia in presence of ammonoacidic and ammonobasic mineralizers In: Journal of Crystal Growth 479 (2017 ), S. 59-66 ISSN: 0022-0248 DOI: 10.1016/j.jcrysgro.2017.09.027
Schimmel S. , Meisel M. , Hertweck B. , Steigerwald T. , Nebel C. , Alt N. , Schlücker E. , Wellmann P. :Chemical stability of carbon-based inorganic construction materials for in situ x-ray measurements of ammonothermal crystal growth of nitrides 5th German-Swiss Conference on Crystal Growth (Freiburg , 8. März 2017 - 10. März 2017 )
Steinberg C. , Rumler M. , Manuel RA. , Papenheim M. , Wang S. , Mayer A. , Becker M. , Rommel M. , Scheer HC. :Complex 3D structures via double imprint of hybrid structures and sacrificial mould techniques In: Microelectronic Engineering 176 (2017 ), S. 22-27 ISSN: 0167-9317 DOI: 10.1016/j.mee.2017.01.009
2016
Albrecht M. , Erlbacher T. , Bauer A. , Frey L. :Potential of 4H-SiC CMOS for high temperature applications using advanced lateral p-MOSFETs In: Materials Science Forum 858 (2016 ), S. 821-824 ISSN: 0255-5476 DOI: 10.4028/www.scientific.net/MSF.858.821
Banzhaf S. , Schwaiger S. , Erlbacher T. , Bauer A. , Frey L. :Post-Trench Processing of Silicon Deep Trench Capacitors for Power Electronic Applications DOI: 10.1109/ISPSD.2016.7520862
Burenkov A. , Matthus C. , Erlbacher T. :Optimization of 4H-SiC UV Photodiode Performance Using Numerical Process and Device Simulation In: IEEE Sensors Journal 16 (2016 ), S. 4246-4252 ISSN: 1530-437X DOI: 10.1109/JSEN.2016.2539598
Ditze S. , Endruschat A. , Schriefer T. , Rosskopf A. , Heckel T. :Inductive power transfer system with a rotary transformer for contactless energy transfer on rotating applications 2016 IEEE International Symposium on Circuits and Systems, ISCAS 2016 DOI: 10.1109/ISCAS.2016.7538876
Endruschat A. , Heckel T. , Reiner R. , Waltereit P. , Quay R. , Ambacher O. , März M. , Eckardt B. , Frey L. :Slew rate control of a 600 V 55 mΩ GaN cascode 4th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2016 (Fayetteville, AR , 7. November 2016 - 9. November 2016 ) DOI: 10.1109/WiPDA.2016.7799963
Frey L. , Förthner M. , Hellmann R. , Rommel M. , Girschikofsky MG. :Waveguide Bragg gratings in Ormocer hybrid polymers In: Optics Express 24 (2016 ), S. 14725-14736 ISSN: 1094-4087 DOI: 10.1364/OE.24.014725
Förthner M. , Rumler M. , Stumpf F. , Fader R. , Rommel M. , Frey L. , Girschikofsky M. , Belle S. , Hellmann R. , Klein JJ. :Hybrid polymers processed by substrate conformal imprint lithography for the fabrication of planar Bragg gratings In: Applied Physics A-Materials Science & Processing 122 (2016 )ISSN: 0947-8396 DOI: 10.1007/s00339-016-9767-6
Gruenler S. , Rattmann G. , Erlbacher T. , Bauer AJ. , Frey L. :Monolithic 3D TSV-based high-voltage, high-temperature capacitors In: Microelectronic Engineering 156 (2016 ), S. 19-23 ISSN: 0167-9317 DOI: 10.1016/j.mee.2016.02.008
Heckel T. , Rettner C. , März M. :Fundamental Efficiency Limits in Power Electronic Systems 2015 IEEE International Telecommunications Energy Conference, INTELEC 2015 DOI: 10.1109/INTLEC.2015.7572399
Hutzler A. , Branscheid R. , Jank M. , Frey L. , Spiecker E. :Graphene-Supported Microwell Liquid Cell for In Situ Electron Microscopy in Materials Science In: Microscopy and Microanalysis 22 (2016 ), S. 78 - 79 ISSN: 1431-9276 DOI: 10.1017/S1431927616012423
Hutzler A. , Branscheid R. , Jank M. , Frey L. , Spiecker E. :Graphene‐supported microwell liquid cell for in situ studies in TEM and SEM European Microscopy Congress 2016 (Lyon , 28. August 2016 - 2. September 2016 )In: European Microscopy Congress 2016 Volume 1: Instrumentation and Methods 2016 DOI: 10.1002/9783527808465.EMC2016.6612
Hürner A. , Mitlehner H. , Erlbacher T. , Bauer A. , Frey L. :Conduction loss reduction for bipolar injection field-effect-transistors (BIFET) Trans Tech Publications Ltd , 2016 ISBN: 9783035710427 DOI: 10.4028/www.scientific.net/MSF.858.917
Jelinek M. , Laven JG. , Ganagona N. , Job R. , Schustereder W. , Schulze HJ. , Rommel M. , Frey L. :Metastable defects in proton implanted and annealed silicon In: Solid State Phenomena 242 (2016 ), S. 169-174 ISSN: 1012-0394 DOI: 10.4028/www.scientific.net/SSP.242.169
Jelinek M. , Laven JG. , Ganagona N. , Schustereder W. , Schulze HJ. , Rommel M. , Frey L. :The efficiency of hydrogen-doping as a function of implantation temperature Trans Tech Publications Ltd , 2016 ISBN: 9783038356080 DOI: 10.4028/www.scientific.net/SSP.242.175
Krach F. , Heckel T. , Frey L. , Bauer A. , Erlbacher T. , März M. :Innovative Monolithic RC-Snubber for Fast Switching Power Modules 9th International Conference on Integrated Power Electronics Systems (CIPS)
Krach F. , Thielen N. , Heckel T. , Bauer A. , Erlbacher T. , Frey L. , Heckel T. :Silicon integrated RC snubbers for applications up to 900V with reduced mechanical stress and high manufacturability (2016 ), Art.Nr.: 7548452 ISSN: 15483770 DOI: 10.1109/DRC.2016.7548452 (anderer)
Kreutzer O. , Heckel T. , März M. :Using SiC MOSFET’s full potential – Switching faster than 200 kV/μs Trans Tech Publications Ltd , 2016 ISBN: 9783035710427 DOI: 10.4028/www.scientific.net/MSF.858.880
Liu X. , Wegener CM. , Polster S. , Jank M. , Roosen A. , Frey L. :Materials Integration for Printed Zinc Oxide Thin-Film Transistors: Engineering of a Fully-Printed Semiconductor/Contact Scheme In: Journal of Display Technology 12 (2016 )ISSN: 1551-319X DOI: 10.1109/JDT.2015.2445378
Lorentz V. , Schwarz R. , Heckel T. , März M. , Frey L. , Heckel T. :Integrated galvanically isolated MOSFET and IGBT gate-driver circuit with switching speed control 41st Annual Conference of the IEEE Industrial Electronics Society, IECON 2015 DOI: 10.1109/IECON.2015.7392158
Matthus C. , Erlbacher T. , Burenkov A. , Bauer A. , Frey L. :Ion implanted 4H-SiC UV pin-diodes for solar radiation detection – Simulation and characterization In: Materials Science Forum 858 (2016 ), S. 1032-1035 ISSN: 0255-5476 DOI: 10.4028/www.scientific.net/MSF.858.1032
Meric Z. , Mehringer C. , Jank MPM. , Peukert W. , Frey L. :Electrical properties of solution processed layers based on Ge-Si alloy nanoparticles In: MRS Advances 1 (2016 ), S. 2331-2336 ISSN: 2059-8521 DOI: 10.1557/adv.2016.329
Munoz LE. , Bilyy R. , Biermann MHC. , Kienhoefer D. , Maueröder C. , Hahn J. , Brauner JM. , Weidner D. , Chen J. , Scharin-Mehlmann M. , Janko C. , Friedrich RP. , Mielenz D. , Dumych T. , Lootsik MD. , Schauer C. , Schett G. , Hoffmann M. , Zhao Y. , Herrmann M. :Nanoparticles size-dependently initiate self-limiting NETosis-driven inflammation In: Proceedings of the National Academy of Sciences of the United States of America 113 (2016 ), S. E5856-E5865 ISSN: 0027-8424 DOI: 10.1073/pnas.1602230113
Oertel S. , Jank M. , Frey L. , Hofmann C. , Lang N. , Struck M. :Screen-printed biochemical sensors for detection of ammonia levels in sweat - Towards integration with vital parameter monitoring sports gear 9th International Conference on Biomedical Electronics and Devices, BIODEVICES 2016 - Part of 9th International Joint Conference on Biomedical Engineering Systems and Technologies, BIOSTEC 2016 DOI: 10.5220/0005691501600165
Pobegen G. , Weiße J. , Hauck M. , Weber HB. , Krieger M. :On the origin of threshold voltage instability under operating conditions of 4H-SiC n-channel MOSFETs In: Materials Science Forum 858 (2016 )ISSN: 0255-5476 DOI: 10.4028/www.scientific.net/MSF.858.473
Polster S. , Jank M. , Frey L. :Correlation of film morphology and defect content with the charge-carrier transport in thin-film transistors based on ZnO nanoparticles In: Journal of Applied Physics 119 (2016 )ISSN: 0021-8979 DOI: 10.1063/1.4939289
Preuster P. , Wagner L. , Nuß A. , Geiling J. , Steinberger M. , Bösmann A. , Wasserscheid P. :Evaluation of a novel reactor concept for the process intensification and intelligent heat management in the hydrogenation and dehydrogenation of Liquid Organic Hydrogen Carriers 21st World Hydrogen Energy Conference 2016, WHEC 2016 (Saragossa , 13. Juni 2016 - 16. Juni 2016 ) URL: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85016937508&origin=inward
Rumler M. , Kollmuss M. , Baier L. , Michel F. , Förthner M. , Becker M. , Rommel M. , Frey L. :Combination of direct laser writing and soft lithography molds for combined nano- and microfabrication DOI: 10.1117/12.2248219
Sanftl B. , Joffe C. , Trautmann M. , Weigel R. , Kölpin A. :Reliabe Data Link for Power Transfer Control in an Inductive Charging System for Electric Vehicles IEEE MTT-S International Conference on Microwaves for Intelligent Mobility (San Diego, USA )In: IEEE MTT-S International Conference on Microwaves for Intelligent Mobility 2016 DOI: 10.1109/ICMIM.2016.7533929
Schriefer T. , Hofmann M. :Mechanical Reliability of Power Electronic Systems 9th International Conference on Integrated Power Electronics Systems (Nuremberg , 8. März 2016 - 10. März 2016 ) URL: https://ieeexplore.ieee.org/document/7736747
Spitzer P. , Condic M. , Herrmann M. , Oberstein T. , Scharin-Mehlmann M. , Gilbert D. , Friedrich O. , Groemer T. , Kornhuber J. , Lang R. , Maler JM. :Amyloidogenic amyloid-?-peptide variants induce microbial agglutination and exert antimicrobial activity In: Scientific Reports 6 (2016 ), S. 32228 ISSN: 2045-2322 DOI: 10.1038/srep32228
Toumi, S. S. , Ouennoughi Z. , Strenger C. , Frey L. :Determination of Fowler-Nordheim tunneling parameters in Metal-Oxide-Semiconductor structure including oxide field correction using a vertical optimization method In: Solid-State Electronics 122 (2016 ), S. 56-63 ISSN: 0038-1101 DOI: 10.1016/j.sse.2016.04.007
Trautmann M. , Joffe C. , Pflaum F. , Sanftl B. , Weigel R. , Heckel T. , Kölpin A. :Implementation of Simultaneous Energy and Data Transfer in a Contactless Connector IEEE Topical Conference on Wireless Sensors and Sensor Networks (WiSNet) (Austin, TX ) DOI: 10.1109/WISNET.2016.7444333
Wegener CM. , Spiehl D. , Sauer HM. , Mikschl F. , Liu X. , Kölpin N. , Schmidt M. , Jank M. , Dörsam E. , Roosen A. :Flexographic printing of nanoparticulate tin-doped indium oxide inks on PET foils and glass substrates In: Journal of Materials Science (2016 )ISSN: 0022-2461 DOI: 10.1007/s10853-016-9772-3
Xie F. , Weiß R. , Weigel R. :Simple Mathematical Operation-Based Calibration Method for Giant Magnetoresistive Current Sensor Applying B-Spline Modeling In: IEEE Sensors Journal 16 (2016 ), S. 4733-4739 ISSN: 1530-437X DOI: 10.1109/JSEN.2016.2558468
Zhou X. , Häublein V. , Liu N. , Nguyen NT. , Zolnhofer E. , Tsuchiya H. , Manuela K. , Meyer K. , Schmuki P. , Frey L. :TiO2 Nanotubes: Nitrogen-Ion Implantation at Low Dose Provides Noble-Metal-Free Photocatalytic H-2-Evolution Activity In: Angewandte Chemie International Edition 55 (2016 ), S. 3763-3767 ISSN: 1433-7851 DOI: 10.1002/anie.201511580
Ziller J. , Dräger T. , Heckel T. :Inductive high data rate transmission for bearing systems IEEE Topical Conference on Wireless Sensors and Sensor Networks, WiSNet 2016 DOI: 10.1109/WISNET.2016.7444332
2015
Adelmann B. , Hürner A. , Roth GL. , Hellmann R. :Back side ablation of SiC diodes using a q-switched NIR laser In: Journal of Laser Micro Nanoengineering 10 (2015 ), S. 190-194 ISSN: 1880-0688 DOI: 10.2961/jlmn.2015.02.0016
Banzhaf C. , Grieb M. , Rambach M. , Bauer A. , Frey L. :Impact of post-trench processing on the electrical characteristics of 4H-SiC trench-MOS structures with thick top and bottom oxides Trans Tech Publications Ltd , 2015 ISBN: 9783038354789 DOI: 10.4028/www.scientific.net/MSF.821-823.753
Dudek D. , Fettweis G. , Frey L. , Kissinger D. , Kutter C. , Mathis W. , Lugli P. , Russer P. , Weigel R. , Wolff I. :Hidden Electronics In: Positionspapier des VDE , 2015 , S. 1-24 URL: https://www.vde.com/de/fg/gmm/news/documents/vde_pp_hidden\%20electronics_rz_web.pdf (Working Paper)
Eckardt B. , Heckel T. :High Power Density Automotive Converters using SiC or GaN Power Devices Automotive Power Electronics International Conference (APE) URL: http://www.sia.fr/publications/157-high-power-density-automotive-converters-using-sic-or-gan-power-devices
Erlbacher T. , Schwarzmann H. , Bauer AJ. , Doehler GH. , Schreivogel M. , Lutz T. , Guillen FH. , Graf J. , Fix R. , Frey L. :Modeling of ion drift in 4H-SiC-based chemical MOSFET sensors In: Journal of Vacuum Science & Technology B 33 (2015 )ISSN: 1071-1023 DOI: 10.1116/1.4903054
Frey L. , Osvet A. , Zhou X. , Haeublein V. , Schmuki P. , Frey L. , Spiecker E. , Mackovic M. , Liu N. , Hartmann M. , Nakajima T. , Venkatesan UM. :"Black" TiO2 Nanotubes Formed by High-Energy Proton Implantation Show Noble-Metal-co-Catalyst Free Photocatalytic H2-Evolution In: Nano Letters 15 (2015 ), S. 6815-6820 ISSN: 1530-6984 DOI: 10.1021/acs.nanolett.5b02663
Fügl M. , Mackh G. , Meissner E. , Frey L. :Assessment of dicing induced damage and residual stress on the mechanical and electrical behavior of chips 2015 65th IEEE Electronic Components and Technology Conference, ECTC 2015 DOI: 10.1109/ECTC.2015.7159594
Girschikofsky MG. , Förthner M. , Rommel M. , Frey L. , Hellmann R. :Bragg gratings in imprinted Ormocer® waveguides 24th International Conference on Plastic Optical Fibers, POF 2015 URL: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84964659470&origin=inward
Grosch J. , Teuber E. , Jank M. , Lorentz V. , März M. , Frey L. :Device optimization and application study of low cost printed temperature sensor for mobile and stationary battery based Energy Storage Systems International Conference on Smart Energy Grid Engineering, SEGE 2015 DOI: 10.1109/SEGE.2015.7324599
Gruenler S. , Rattmann G. , Erlbacher T. , Bauer AJ. , Frey L. :High-voltage monolithic 3D capacitors based on through-silicon-via technology IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference, IITC/MAM 2015 DOI: 10.1109/IITC-MAM.2015.7325655
Heckel T. , Eckhardt B. , März M. , Frey L. , Heckel T. :SiC MOSFETs in hard-switching bidirectional DC/DC converters Trans Tech Publications Ltd , 2015 ISBN: 9783038354789 DOI: 10.4028/www.scientific.net/MSF.821-823.689
Heckel T. , Frey L. :A Novel Charge Based SPICE Model for Nonlinear Device Capacitances 3rd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2015 DOI: 10.1109/WiPDA.2015.7369263
Hofmann M. , Eckardt B. , Heckel T. :Inverter Technology for High-Speed Drives Like Electric Turbochargers 10th ETG/GMM-Symposium on Innovative Small Drives and Micro-Motor Systems (IKMT)
Hürner A. , Di Benedetto L. , Erlbacher T. , Mitlehner H. , Bauer A. , Frey L. :Robust double-ring junction termination extension design for high voltage power semiconductor devices based on 4H-SiC Trans Tech Publications Ltd , 2015 ISBN: 9783038354789 DOI: 10.4028/www.scientific.net/MSF.821-823.656
Hürner A. , Erlbacher T. , Mitlehner H. , Bauer A. , Frey L. :Temperature dependent characterization of bipolar injection field- effect-transistors (BiFET) for determining the short-circuit-capability Trans Tech Publications Ltd , 2015 ISBN: 9783038354789 DOI: 10.4028/www.scientific.net/MSF.821-823.806
Jelinek M. , Laven JG. , Kirnstoetter S. , Schustereder W. , Schulze H-. , Rommel M. , Frey L. :A DLTS study of hydrogen doped czochralski-grown silicon In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 365 (2015 ), S. 240-243 ISSN: 0168-583X DOI: 10.1016/j.nimb.2015.07.078
Kaliya Perumal Veerapandian S. , Beuer S. , Rumler M. , Stumpf F. , Thomas K. , Pillatsch L. , Michler J. , Frey L. , Rommel M. :Comparison of silicon and 4H silicon carbide patterning using focused ion beams In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 365 (2015 ), S. 44-49 ISSN: 0168-583X DOI: 10.1016/j.nimb.2015.07.079
Krach F. , Schwarzmann H. , Bauer A. , Erlbacher T. , Frey L. :Silicon nitride, a high potential dielectric for 600 v integrated RC-snubber applications In: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics 33 (2015 ), Art.Nr.: 01A112 ISSN: 2166-2754 DOI: 10.1116/1.4906082
Noll S. , Rambach M. , Grieb M. , Scholten D. , Bauer A. , Frey L. :Influence of annealing, oxidation and doping on conduction-band near interface traps in 4H-SiC characterized by low temperature conductance measurements Trans Tech Publications Ltd , 2015 ISBN: 9783038354789 DOI: 10.4028/www.scientific.net/MSF.821-823.476
Paskaleva A. , Rommel M. , Hutzler A. , Spassov D. , Bauer A. :Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping In: ACS Applied Materials and Interfaces 7 (2015 ), S. 17032 - 17043 ISSN: 1944-8244 DOI: 10.1021/acsami.5b03071 URL: http://pubs.acs.org/doi/abs/10.1021/acsami.5b03071
Paskaleva A. , Weinreich W. , Bauer A. , Lemberger M. , Frey L. :Improved electrical behavior of ZrO2-based MIM structures by optimizing the O3 oxidation pulse time In: Materials Science in Semiconductor Processing 29 (2015 ), S. 124-131 ISSN: 1369-8001 DOI: 10.1016/j.mssp.2013.12.030
Peukert W. , Meric Z. , Mehringer C. , Jank M. , Frey L. , Karpstein N. :Tunable conduction type of solution-processed germanium nanoparticle based field effect transistors and their inverter integration In: Physical Chemistry Chemical Physics 17 (2015 ), S. 22106-22114 ISSN: 1463-9076 DOI: 10.1039/c5cp03321g
Rouag, N. , Ouennoughi Z. , Rommel M. , Murakami K. , Frey L. :Current conduction mechanism of MIS devices using multidimensional minimization system program In: Microelectronics Reliability 55 (2015 ), S. 1028-1034 ISSN: 0026-2714 DOI: 10.1016/j.microrel.2015.05.001
Salinaro A. , Pobegen G. , Aichinger T. , Zippelius B. , Peters DP. , Friedrichs P. , Frey L. :Charge pumping measurements on differently passivated lateral 4H-SiC MOSFETs In: IEEE Transactions on Electron Devices 62 (2015 ), S. 155-163 ISSN: 0018-9383 DOI: 10.1109/TED.2014.2372874
Stadler A. , Stolzke T. , Gulden C. :Design and simulation of thermally optimized filter inductors for a 1mw windmill demonstrator 2015 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2015 URL: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84997418748∨igin=inward
Stadler A. , Stolzke T. , Gulden C. :Optimized filter inductors for a 1MW windmill demonstrator with an objective to reduced converter size 17th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2015 DOI: 10.1109/EPE.2015.7309130
Stolzke T. , Stadler A. , Gulden C. :Calculating phase currents for high frequency three phase inductors via the inductance matrix 2015 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2015 URL: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84997417432&origin=inward
Szwarc R. , Frey L. , Weber H. , Moder I. , Erlbacher T. , Rommel M. , Bauer AJ. :Modelling of the electrochemical etch stop with high reverse bias across pn-junctions 26th Annual SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2015 DOI: 10.1109/ASMC.2015.7164437
Wegener CM. , Spiehl D. , Mikschl F. , Liu X. , Roosen A. :Printing of Ultrathin Nanoparticulate Indium Tin Oxide Structures International Conference and Exhibition on Ceramic Interconnect and Ceramic Microsystems Technologies (CICMT)
2014
Banzhaf C. , Grieb M. , Trautmann A. , Bauer A. , Frey L. :Influence of diverse post-trench processes on the electrical performance of 4H-SiC MOS structures Trans Tech Publications Ltd , 2014 ISBN: 9783038350101 DOI: 10.4028/www.scientific.net/MSF.778-780.595
Banzhaf C. , Grieb M. , Trautmann A. , Bauer A. , Frey L. :Investigation of trenched and high temperature annealed 4H-SiC Trans Tech Publications Ltd , 2014 ISBN: 9783038350101 DOI: 10.4028/www.scientific.net/MSF.778-780.742
Erlbacher T. , Schwarzmann H. , Krach F. , Bauer AJ. , Berberich SE. , Kasko I. , Frey L. :Reliability of monolithic RC-snubbers in MOS-based power modules 5th Electronics System-Integration Technology Conference, ESTC 2014 DOI: 10.1109/ESTC.2014.6962794
Erlekampf J. , Seebeck J. , Savva P. , Meissner E. , Friedrich J. , Alt N. , Schlücker E. , Frey L. :Numerical time-dependent 3D simulation of flow pattern and heat distribution in an ammonothermal system with various baffle shapes In: Journal of Crystal Growth 403 (2014 ), S. 96-104 ISSN: 0022-0248 DOI: 10.1016/j.jcrysgro.2014.06.007
Frey L. , Niedermeier MT. , Wenger MM. , Filimon R. , Sedlacek V. , Lorentz VR. , Fort C. , März M. , Ferrieux JP. :Galvanically isolated differential data transmission using capacitive coupling and a modified Manchester algorithm for smart power converters 2014 IEEE 23rd International Symposium on Industrial Electronics, ISIE 2014 (Istanbul ) DOI: 10.1109/ISIE.2014.6865029
Frey L. , Trapnauskas J. , Rommel M. , Bauer AJ. , Frey L. :Thickness mapping of high-κ dielectrics at the nanoscale In: Applied Physics Letters 104 (2014 ), Art.Nr.: 052907 ISSN: 0003-6951 DOI: 10.1063/1.4863947
Fügl M. , Mackh G. , Meissner E. , Frey L. :Analytical stress characterization after different chip separation methods In: Microelectronics Reliability 54 (2014 ), S. 1735-1740 ISSN: 0026-2714 DOI: 10.1016/j.microrel.2014.07.086
Haublein V. , Birnbaum E. , Ryssel H. , Frey L. , Grimm W. :Modification of polypropylene films for thin film capacitors by ion implantation 20th International Conference on Ion Implantation Technology, IIT 2014 DOI: 10.1109/IIT.2014.6939968
Heckel T. , Frey L. , Zeltner S. :Characterization and Application of 600 V Normally-Off GaN Transistors in Hard Switching DC/DC Converters 26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014 (Waikoloa, HI ) DOI: 10.1109/ISPSD.2014.6855976
Hilden T. , Jänker P. , Frey L. :Comparison of Si/SiC semiconductor performance using experiment-based simulation International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2014 (Nuremberg ) URL: https://www.scopus.com/record/display.uri?eid=2-s2.0-84906535889∨igin=inward
Hürner A. , Bonse C. , Clemmer G. , Kallinger B. , Heckel T. , Erlbacher T. , Mitlehner H. , Häublein V. , Bauer A. , Frey L. , Heckel T. :Temperature and electrical field dependence of the ambipolar mobility in n-doped 4H-SiC Trans Tech Publications Ltd , 2014 ISBN: 9783038350101 DOI: 10.4028/www.scientific.net/MSF.778-780.487
Hürner A. , Mitlehner H. , Erlbacher T. , Bauer A. , Frey L. :Experimental analysis of bipolar SiC-devices for future energy distribution systems 2014 16th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2014 DOI: 10.1109/EPE.2014.6910847
Jelinek M. , Laven JG. , Job R. , Schustereder W. , Schulze HJ. , Rommel M. , Frey L. :New method to increase the doping efficiency of proton implantation in a high-dose regime 13th High Purity and High Mobility Semiconductor Symposium - 2014 ECS and SMEQ Joint International Meeting DOI: 10.1149/06411.0199ecst
Jelinek M. , Laven JG. , Rommel M. , Schustereder W. , Schulze HJ. , Frey L. , Job R. :Deep-level defects in high-dose proton implanted and high-temperature annealed silicon 13th High Purity and High Mobility Semiconductor Symposium - 2014 ECS and SMEQ Joint International Meeting DOI: 10.1149/06411.0173ecst
Jelinek M. , Schustereder W. , Laven JG. , Schulze HJ. , Kirnstoetter S. , Rommel M. , Frey L. :MeV-proton channeling in crystalline silicon 20th International Conference on Ion Implantation Technology, IIT 2014 DOI: 10.1109/IIT.2014.6940059
Kilian D. , Polster S. , Vogeler I. , Frey L. , Jank M. , Peukert W. :Pulsed direct flame deposition and thermal annealing of transparent amorphous indium zinc oxide films as active layers in field effect transistors In: ACS Applied Materials and Interfaces 6 (2014 ), S. 12245-12251 ISSN: 1944-8244 DOI: 10.1021/am501837u
Koller TM. , Schmid S. , Sachnov S. , Rausch MH. , Wasserscheid P. , Fröba AP. :Measurement and Prediction of the Thermal Conductivity of Tricyanomethanide- and Tetracyanoborate-Based Imidazolium Ionic Liquids In: International Journal of Thermophysics 35 (2014 ), S. 195-217 ISSN: 0195-928X DOI: 10.1007/s10765-014-1617-1
Landwehr J. , Fader R. , Rumler M. , Rommel M. , Bauer A. , Frey L. , Simon B. , Fodor B. , Petrik P. , Schiener A. , Winter B. , Spiecker E. :Optical polymers with tunable refractive index for nanoimprint technologies In: Nanotechnology 25 (2014 ), S. Article number 505301 ISSN: 1361-6528 DOI: 10.1088/0957-4484/25/50/505301
Laven JG. , Jelinek M. , Job R. , Schustereder W. , Schulze H-. , Rommel M. , Frey L. :DLTS characterization of proton-implanted silicon under varying annealing conditions In: Physica Status Solidi 251 (2014 ), S. 2189-2192 ISSN: 0031-8957 DOI: 10.1002/pssb.201400028
Murakami K. , Rommel M. , Hudec B. , Rosova A. , Husekova K. , Dobrocka E. , Rammula R. , Kasikov A. , Han JH. , Lee W. , Song SJ. , Paskaleva A. , Bauer AJ. , Frey L. , Froehlich K. , Aarik J. , Hwang CS. :Nanoscale characterization of TiO2 films grown by atomic layer deposition on RuO2 electrodes In: ACS Applied Materials and Interfaces 6 (2014 ), S. 2486-2492 ISSN: 1944-8244 DOI: 10.1021/am4049139
Noll S. , Rambach M. , Grieb M. , Scholten D. , Bauer A. , Frey L. :Effect of shallow n-doping on field effect mobility in p-doped channels of 4H-SiC MOS field effect transistors Trans Tech Publications Ltd , 2014 ISBN: 9783038350101 DOI: 10.4028/www.scientific.net/MSF.778-780.702
Oertel S. , Jank M. , Teuber E. , Bauer A. , Frey L. :High-mobility metal-oxide thin-film transistors by spray deposition of environmentally friendly precursors In: Thin Solid Films 553 (2014 ), S. 114-117 ISSN: 0040-6090 DOI: 10.1016/j.tsf.2013.11.061
Scharin M. , Rommel M. , Dirnecker T. , Marhenke J. , Herrmann B. , Rumler M. , Fader R. , Frey L. , Herrmann M. :Bioactivation of plane and patterned PDMS thin films by wettability engineering In: BioNanoScience 4 (2014 ), S. 251-262 ISSN: 2191-1630 DOI: 10.1007/s12668-014-0145-6
Schimmel S. , Künecke U. , Steigerwald T. , Hertweck B. , Alt N. , Schlücker E. , Wellmann P. :In Situ Visualization of GaN Crystals in Ammonothermal High Pressure Autoclaves by X-ray Imaging German Conference on Crystal Growth (Halle , 12. März 2014 - 14. März 2014 )
Stadler A. , Huber R. , Stolzke T. , Gulden C. :Analytical calculation of copper losses in litz-wire windings of gapped inductors In: IEEE Transactions on Magnetics 50 (2014 ), Art.Nr.: 6748958 ISSN: 0018-9464 DOI: 10.1109/TMAG.2013.2282333
Stadler A. , Stolzke T. , Gulden C. :A new generation of modular power inductors with minimum thermal resistance 2014 16th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2014 DOI: 10.1109/EPE.2014.6910771
Stadler A. , Stolzke T. , Gulden C. :High frequency high current filter inductors with minimum thermal resistance 16th International Power Electronics and Motion Control Conference and Exposition, PEMC 2014 DOI: 10.1109/EPEPEMC.2014.6980507
Strenger C. , Uhnevionak V. , Mortet V. , Ortiz G. , Erlbacher T. , Burenkov A. , Bauer A. , Cristiano F. , Bedel-Pereira E. , Pichler P. , Ryssel H. , Frey L. :Systematic analysis of the high-and low-field channel mobility in lateral 4H-SiC MOSFETs 15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013 (Miyazaki )In: Silicon Carbide and Related Materials 2013 2014 DOI: 10.4028/www.scientific.net/MSF.778-780.583
Thesen MW. , Nees D. , Ruttloff S. , Rumler M. , Rommel M. , Schlachter F. , Grützner S. , Vogler M. , Schleunitz A. , Grützner G. :Inkjetable and photo-curable resists for large-area and high-throughput roll-to-roll nanoimprint lithography In: Journal of Micro-Nanolithography MEMS and MOEMS 13 (2014 )ISSN: 1932-5150 DOI: 10.1117/1.JMM.13.4.043003
Thesen MW. , Rumler M. , Schlachter F. , Grützner S. , Moormann C. , Rommel M. , Nees D. , Ruttloff S. , Pfirrmann S. , Vogler M. , Schleunitz A. , Grützner G. :Enabling Large Area and High Throughput Roll-to-Roll NIL by Novel Inkjetable and Photo-curable NIL-Resists DOI: 10.1117/12.2046279
2013
Adelmann B. , Hürner A. , Schlegel T. , Bauer A. , Frey L. , Hellmann R. :Laser alloying nickel on 4H-silicon carbide substrate to generate ohmic contacts In: Journal of Laser Micro Nanoengineering 8 (2013 ), S. 97-101 ISSN: 1880-0688 DOI: 10.2961/jlmn.2013.01.0019 (Zeitungsartikel)
Banzhaf C. , Grieb M. , Trautmann A. , Bauer A. , Frey L. :Characterization of diverse gate oxides on 4H-SiC 3D trench-MOS structures 2013 ISBN: 9783037856246 DOI: 10.4028/www.scientific.net/MSF.740-742.691
Baum M. , Polster S. , Jank M. , Alexeev I. , Frey L. , Schmidt M. :Laser melting of nanoparticulate transparent conductive oxide thin films In: Journal of Laser Micro Nanoengineering 8 (2013 ), S. 144-148 ISSN: 1880-0688 DOI: 10.2961/jlmn.2013.02.0005
Behrens T. , Suenner T. , Geinitz E. , Schletz A. , Frey L. :Optimization of copper top-side metallization for high performance SiC-devices 2013 ISBN: 9783037856246 DOI: 10.4028/www.scientific.net/MSF.740-742.801
Fader R. , Landwehr J. , Rumler M. , Rommel M. , Bauer A. , Frey L. , Voelkel R. , Brehm M. , Kraft A. :Functional epoxy polymer for direct nano-imprinting of micro-optical elements In: Microelectronic Engineering 110 (2013 ), S. 90-93 ISSN: 0167-9317 DOI: 10.1016/j.mee.2013.02.030
Fader R. , Rommel M. , Bauer A. , Rumler M. , Frey L. , Verschuuren MA. , Van De Laar R. , Ji R. , Schoembs U. :Accuracy of wafer level alignment with substrate conformal imprint lithography In: Journal of Vacuum Science & Technology B 31 (2013 ), S. 6FB02 ISSN: 1071-1023 DOI: 10.1116/1.4824696
Hackenberg M. , Rommel M. , Rumler M. , Lorenz J. , Pichler P. , Huet K. , Negro R. , Fisicaro . , La Magna A. , Taleb N. , Quillec M. :Melt Depth and Time Variations during Pulsed Laser Thermal Annealing with One and More Pulses, In: Solid-State Device Research Conference (ESSDERC), 2013 Proceedings of the European , 2013 , S. 214-217 DOI: 10.1109/ESSDERC.2013.6818857
Häublein V. , Temmel G. , Mitlehner H. , Rattmann G. , Strenger C. , Hürner A. , Bauer A. , Ryssel H. , Frey L. :Comparative study of n-LIGBT and n-LDMOS structures on 4H-SiC 2013 ISBN: 9783037856246 DOI: 10.4028/www.scientific.net/MSF.740-742.887
Hürner A. , Schlegl T. , Adelmann B. , Mitlehner H. , Hellmann R. , Bauer A. , Frey L. :Alloying of ohmic contacts to n-type 4H-SiC via laser irradiation 2013 ISBN: 9783037856246 DOI: 10.4028/www.scientific.net/MSF.740-742.773
Iglesias V. , Martin-Martinez J. , Porti M. , Rodriguez R. , Nafria M. , Aymerich X. , Erlbacher T. , Rommel M. , Murakami K. , Bauer AJ. , Frey L. , Bersuker G. :Bimodal CAFM TDDB distributions in polycrystalline HfO2 gate stacks: The role of the interfacial layer and grain boundaries In: Microelectronic Engineering 109 (2013 ), S. 129-132 ISSN: 0167-9317 DOI: 10.1016/j.mee.2013.03.022
Jokubavicius V. , Huang HH. , Schimmel S. , Liljedahl R. , Yakimova R. , Syväjärvi M. :Towards bulk-like 3C-SiC growth using low off-axis substrates In: Materials Science Forum 740-742 (2013 ), S. 275-278 ISSN: 0255-5476 DOI: 10.4028/www.scientific.net/msf.740-742.275
Kölpin N. , Wegener CM. , Teuber E. , Polster S. , Frey L. , Roosen A. :Conceptional design of nano-particulate ITO inks for inkjet printing of electron devices In: Journal of Materials Science 48 (2013 ), S. 1623-1631 ISSN: 0022-2461 DOI: 10.1007/s10853-012-6919-8
Laven JG. , Job R. , Hans Joachim S. , Niedernostheide FJ. , Schustereder W. , Frey L. :Activation and dissociation of proton-induced donor profiles in silicon In: ECS Journal of Solid State Science and Technology 2 (2013 )ISSN: 2162-8769 DOI: 10.1149/2.028309jss
Noll S. , Scholten D. , Grieb M. , Bauer A. , Frey L. :Electrical impact of the aluminum p-implant annealing on lateral MOSFET transistors on 4H-SiC n-epi 2013 ISBN: 9783037856246 DOI: 10.4028/www.scientific.net/MSF.740-742.521
Ouennoughi Z. , Strenger C. , Bourouba F. , Haeublein V. , Ryssel H. , Frey L. :Conduction mechanisms in thermal nitride and dry gate oxides grown on 4H-SiC In: Microelectronics Reliability 53 (2013 ), S. 1841-1847 ISSN: 0026-2714 DOI: 10.1016/j.microrel.2013.06.009
Rommel M. , Jambreck JD. , Lemberger M. , Bauer A. , Frey L. , Murakami K. , Richter C. , Weinzierl P. :Influence of parasitic capacitances on conductive AFM I-V measurements and approaches for its reduction In: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics 31 (2013 ), Art.Nr.: 01A108 ISSN: 2166-2754 DOI: 10.1116/1.4768679
Rommel M. , Rumler M. , Haas A. , Bauer AJ. , Frey L. :Processing of silicon nanostructures by Ga+ resistless lithography and reactive ion etching In: Microelectronic Engineering 110 (2013 ), S. 177-182 ISSN: 0167-9317 DOI: 10.1016/j.mee.2013.03.081
Rumler M. , Fader R. , Haas A. , Rommel M. , Bauer A. , Frey L. :Evaluation of resistless Ga+ beam lithography for UV NIL stamp fabrication In: Nanotechnology 24 (2013 ), S. 365302 ISSN: 0957-4484 DOI: 10.1088/0957-4484/24/36/365302
Stadler A. , Huber R. , Stolzke T. , Gulden C. :The simulation of copper losses in litz-wire windings considering air gap fringing fields International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2013 (Nuremberg ) URL: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84906347177∨igin=inward
Strenger C. , Uhnevionak V. , Burenkov A. , Bauer A. , Pichler P. , Erlbacher T. , Ryssel H. , Frey L. :Influence of ion implantation in SiC on the channel mobility in lateral n-channel MOSFETs DOI: 10.1149/05804.0071ecst
2012
Alt NS. , Meissner E. , Schlücker E. , Frey L. :In situ monitoring technologies for ammonthermal reactors In: Physica Status Solidi (C) Current Topics in Solid State Physics 9 (2012 ), S. 436-439 ISSN: 1862-6351 DOI: 10.1002/pssc.201100361
Baum M. , Polster S. , Jank M. , Alexeev I. , Frey L. , Schmidt M. :Efficient laser induced consolidation of nanoparticulate ZnO thin films with reduced thermal budget In: Applied Physics A-Materials Science & Processing 107 (2012 ), S. 269-273 ISSN: 0947-8396 DOI: 10.1007/s00339-012-6871-0
Daves W. , Krauss A. , Haeublein V. , Bauer A. , Frey L. :4H-SiC MOSFETs with a stable protective coating for harsh environment applications 2012 ISBN: 9783037854198 DOI: 10.4028/www.scientific.net/MSF.717-720.1089
Daves W. , Krauß A. , Häublein V. , Bauer A. , Frey L. :Structural and reliability analysis of ohmic contacts to SiC with a stable protective coating for harsh environment applications In: ECS Journal of Solid State Science and Technology 1 (2012 )ISSN: 2162-8769 DOI: 10.1149/2.019201jss
Erlbacher T. , Bauer AJ. , Frey L. :Significant on-resistance reduction of LDMOS devices by intermitted trench gates integration In: IEEE Transactions on Electron Devices 59 (2012 ), S. 3470-3476 ISSN: 0018-9383 DOI: 10.1109/TED.2012.2220777
Erlbacher T. , Bickermann M. , Kallinger B. , Meissner E. , Bauer A. , Frey L. :Ohmic and rectifying contacts on bulk AlN for radiation detector applications In: Physica Status Solidi (C) Current Topics in Solid State Physics 9 (2012 ), S. 968-971 ISSN: 1862-6351 DOI: 10.1002/pssc.201100341
Erlbacher T. , Schwarzmann H. , Bauer AJ. , Berberich SE. , vom Dorp J. , Frey L. :Improving module performance and reliability in power electronic applications by monolithic integration of RC-snubbers 24th International Symposium on Power Semiconductor Devices and ICs, ISPSD'12 (Bruges ) DOI: 10.1109/ISPSD.2012.6229078
Fader R. , Schmitt H. , Rommel M. , Bauer AJ. , Frey L. , Ji R. , Hornung M. , Brehm M. , Vogler M. :Novel organic polymer for UV-enhanced substrate conformal imprint lithography In: Microelectronic Engineering 98 (2012 ), S. 238-241 ISSN: 0167-9317 DOI: 10.1016/j.mee.2012.07.010
Frey L. , Hürner A. , Bauer A. , Erlbacher T. :Feasibility and limitations of anti-fuses based on bistable non-volatile switches for power electronic applications In: Solid-State Electronics 75 (2012 ), S. 33-36 ISSN: 0038-1101 DOI: 10.1016/j.sse.2012.05.004
Hilden T. , Janker P. , Frey L. :Reverse recovery of All-SiC switches International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2012 (Nuremberg ) URL: https://www.scopus.com/record/display.uri?eid=2-s2.0-84874123396∨igin=inward
Hofmann M. , Schletz A. , Domes K. , März M. , Frey L. :Modular inverter power electronic for intelligent e-drives 2012 2nd International Electric Drives Production Conference, EDPC 2012 (Nuremberg ) DOI: 10.1109/EDPC.2012.6425132
Häublein V. , Ryssel H. , Frey L. :Purity of ion beams: Analysis and simulation of mass spectra and mass interferences in ion implantation In: Advances in Materials Science and Engineering 2012 (2012 ), Art.Nr.: 610150 ISSN: 1687-8434 DOI: 10.1155/2012/610150
Krach F. , Hertel S. , Waldmann D. , Jobst J. , Krieger M. , Reshanov S. , Schoner A. , Weber HB. :A switch for epitaxial graphene electronics: Utilizing the silicon carbide substrate as transistor channel In: Applied Physics Letters 100 (2012 ), S. 122102 ISSN: 0003-6951 DOI: 10.1063/1.3695157
Laven J. , Job R. , Schulze H-. , Niedernostheide FJ. , Schustereder W. , Frey L. :The thermal budget of hydrogen-related donor profiles: Diffusion-limited activation and thermal dissociation 12th High Purity Silicon Symposium - 222nd ECS Meeting (Honolulu, HI ) DOI: 10.1149/05005.0161ecst
Lorentz V. , Wenger M. , Giegerich M. , Zeltner S. , März M. , Frey L. :Smart battery cell monitoring with contactless data transmission 16th International Forum on Advanced Microsystems for Automotive Applications, AMAA 2012 (Berlin ) DOI: 10.1007/978-3-642-29673-4_2
Lorentz V. , Wenger M. , Grosch J. , Giegerich M. , Jank M. , März M. , Frey L. :Novel cost-efficient contactless distributed monitoring concept for smart battery cells 21st IEEE International Symposium on Industrial Electronics, ISIE 2012 (Hangzhou ) DOI: 10.1109/ISIE.2012.6237285
Maier R. , Haeublein V. , Ryssel H. , Völlm H. , Feili D. , Seidel H. , Frey L. :Solid-phase epitaxy of silicon amorphized by implantation of the alkali elements rubidium and cesium 19th International Conference on Ion Implantation Technology 2012, IIT 2012 (Valladolid ) DOI: 10.1063/1.4766542
Mueller J. , Boescke TS. , Schroeder U. , Hoffmann R. , Mikolajick T. , Frey L. :Nanosecond polarization switching and long retention in a novel MFIS-FET based on ferroelectric HfO 2 In: IEEE Electron Device Letters 33 (2012 ), S. 185-187 ISSN: 0741-3106 DOI: 10.1109/LED.2011.2177435
Mueller J. , Boescke TS. , Schroeder U. , Mueller S. , Braeuhaus D. , Boettger U. , Frey L. , Mikolajick T. :Ferroelectricity in simple binary ZrO 2 and HfO 2 In: Nano Letters 12 (2012 ), S. 4318-4323 ISSN: 1530-6984 DOI: 10.1021/nl302049k
Roll G. , Jakschik S. , Goldmann M. , Wachowiak A. , Mikolajick T. , Frey L. :Intrinsic MOSFET leakage of high-k peripheral DRAM devices: Measurement and simulation 2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 (Hsinchu ) DOI: 10.1109/VLSI-TSA.2012.6210165
Rommel M. , Bauer AJ. , Frey L. :Simple and efficient method to fabricate nano cone arrays by FIB milling demonstrated on planar substrates and on protruded structures In: Microelectronic Engineering 98 (2012 ), S. 242-245 ISSN: 0167-9317 DOI: 10.1016/j.mee.2012.07.009
Rumler M. , Rommel M. , Erlekampf J. , Azizi M. , Geiger T. , Bauer AJ. , Meissner E. , Frey L. :Characterization of grain boundaries in multicrystalline silicon with high lateral resolution using conductive atomic force microscopy In: Journal of Applied Physics 112 (2012 ), Art.Nr.: 034909 ISSN: 0021-8979 DOI: 10.1063/1.4746742
Schmitt H. , Duempelmann P. , Fader R. , Rommel M. , Bauer AJ. , Frey L. , Brehm M. , Kraft A. :Life time evaluation of PDMS stamps for UV-enhanced substrate conformal imprint lithography In: Microelectronic Engineering 98 (2012 ), S. 275-278 ISSN: 0167-9317 DOI: 10.1016/j.mee.2012.04.032
Schwarzmann H. , Erlbacher T. , Bauer A. , Ryssel H. , Frey L. :Amplitude modulated resonant push-pull driver for piezoelectric transformers in switching power applications 2012 7th International Conference on Integrated Power Electronics Systems, CIPS 2012 (Nuremberg ) URL: https://www.scopus.com/record/display.uri?eid=2-s2.0-84881091503∨igin=inward
Stadler A. , Gulden C. , Stolzke T. :Nonlinear inductors for active power factor correction circuits 15th International Power Electronics and Motion Control Conference and Exposition, EPE-PEMC 2012 ECCE Europe (Novi Sad ) DOI: 10.1109/EPEPEMC.2012.6397508
Stadler A. , Stolzke T. , Gulden C. :Nonlinear power inductors for large current crest factors International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2012 (Nuremberg ) URL: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84874154772∨igin=inward
2011
Bickermann M. , Schimmel S. , Epelbaum B. , Filip O. , Heimann P. , Nagata S. , Winnacker A. :Structural defects in aluminium nitride bulk crystals visualized by cathodoluminescence maps In: Physica Status Solidi (C) Current Topics in Solid State Physics 8 (2011 ), S. 2235–2238 ISSN: 1862-6351 DOI: 10.1002/pssc.201000864
Daves W. , Krauss A. , Behnel N. , Haeublein V. , Bauer A. , Frey L. :Amorphous silicon carbide thin films (a-SiC:H) deposited by plasma-enhanced chemical vapor deposition as protective coatings for harsh environment applications In: Thin Solid Films 519 (2011 ), S. 5892-5898 ISSN: 0040-6090 DOI: 10.1016/j.tsf.2011.02.089
Daves W. , Krauss A. , Haeublein V. , Bauer AJ. , Frey L. :Enhancement of the stability of Ti and Ni ohmic contacts to 4H-SiC with a stable protective coating for harsh environment applications In: Journal of Electronic Materials 40 (2011 ), S. 1990-1997 ISSN: 0361-5235 DOI: 10.1007/s11664-011-1681-2
Daves W. , Krauss A. , Häublein V. , Bauer A. , Frey L. :Electrical characterization of lateral 4H-SiC MOSFETs in the temperature range of 25 to 600 °C for harsh environment applications 2011 IMAPS International Conference on High Temperature Electronics Network, HiTEN 2011 (Oxford ) URL: https://www.scopus.com/record/display.uri?eid=2-s2.0-84876889044∨igin=inward
Daves W. , Krauss A. , Le-Huu M. , Kronmüller S. , Haeublein V. , Bauer A. , Frey L. :Comparative study on metallization and passivation materials for high temperature sensor applications 2011 ISBN: 9783037850794 DOI: 10.4028/www.scientific.net/MSF.679-680.449
Erlbacher T. , Yanev VC. , Rommel M. , Bauer A. , Frey L. :Gate oxide reliability at the nanoscale evaluated by combining conductive atomic force microscopy and constant voltage stress In: Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena 29 (2011 ), S. 01AB08 ISSN: 0734-211X DOI: 10.1116/1.3532820
Fet A. , Haeublein V. , Bauer AJ. , Ryssel H. , Frey L. :Fluorine implantation for effective work function control in p-type metal-oxide-semiconductor high-k metal gate stacks In: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics 29 (2011 )ISSN: 2166-2754 DOI: 10.1116/1.3521471
Frey L. , Le-Huu M. , Grieb M. , Schrey F. , Schmitt H. , Haeublein V. , Bauer A. , Ryssel H. :4H-SiC n-MOSFET logic circuits for high temperature operation 2011 ISBN: 9783037850794 DOI: 10.4028/www.scientific.net/MSF.679-680.734
Garcia E. , Sültrop C. , Hausotte T. :Verbesserung der Detektion sphärischer Marker für die optische Navigationschirurgie. 10. Jahrestagung der Deutschen Gesellschaft für Computer- und Roboterassistierte Chirurgie (Magedeburg , 15. September 2011 - 16. September 2011 )In: Bugert O, Schipper J, Zachow S (Hrsg.): Proceedings, 10. Jahrestagung der Deutschen Gesellschaft für Computer- und Roboterassistierte Chirurgie 2011
Hofmann M. , Eckhardt B. , März M. , Frey L. :Thermal characterization of an axle-twin-drive with system integrated double-inverter 1st International Electric Drives Production Conference, EDPC-2011 (Nuremberg ) DOI: 10.1109/EDPC.2011.6085560
Huang J. , Ujwal R. , Lemberger M. , Jank M. , Polster S. , Ryssel H. , Frey L. :Effects of oxygen and forming gas annealing on ZnO TFTs 2010 MRS Fall Meeting (Boston, MA ) DOI: 10.1557/opl.2011.1144
Jambreck J. , Böhmler M. , Rommel M. , Hartschuh A. , Bauer A. , Frey L. :Light confinement by structured metal tips for antenna-based scanning near-field optical microscopy Instrumentation, Metrology, and Standards for Nanomanufacturing, Optics, and Semiconductors V (San Diego, CA ) DOI: 10.1117/12.893306
Jambreck JD. , Yanev V. , Schmitt H. , Rommel M. , Bauer AJ. , Frey L. :Manufacturing, characterization, and application of nanoimprinted metallic probe demonstrators for electrical scanning probe microscopy In: Microelectronic Engineering 88 (2011 ), S. 2584-2588 ISSN: 0167-9317 DOI: 10.1016/j.mee.2010.12.022
Jank M. , Frey L. , Peukert W. , Körmer R. , Wu J. , Otto M. :EPR investigations of non-oxidized silicon nanoparticles from thermal pyrolysis of silane In: Physica Status Solidi 5 (2011 ), S. 244-246 ISSN: 0031-8957 DOI: 10.1002/pssr.201105208
Kaiser RJ. , Koffel S. , Pichler P. , Bauer AJ. , Amon B. , Frey L. , Ryssel H. :Germanium substrate loss during thermal processing In: Microelectronic Engineering 88 (2011 ), S. 499-502 ISSN: 0167-9317 DOI: 10.1016/j.mee.2010.08.031
Koffel S. , Kaiser RJ. , Bauer AJ. , Amon B. , Pichler P. , Lorenz J. , Frey L. , Scheiblin P. , Mazzocchi V. , Barnes J-. , Claverie A. :Experiments and simulation of the diffusion and activation of the n-type dopants P, As, and Sb implanted into germanium In: Microelectronic Engineering 88 (2011 ), S. 458-461 ISSN: 0167-9317 DOI: 10.1016/j.mee.2010.09.023
Laven J. , Hans Joachim S. , Häublein V. , Niedernostheide FJ. , Ryssel H. , Frey L. :Dopant profiles in silicon created by MeV hydrogen implantation: Influence of annealing parameters In: Physica Status Solidi (C) Current Topics in Solid State Physics 8 (2011 ), S. 697--700 ISSN: 1862-6351 DOI: 10.1002/pssc.201000161
Laven JG. , Job R. , Schustereder W. , Hans Joachim S. , Niedernostheide FJ. , Schulze H. , Frey L. :Conversion efficiency of radiation damage profiles into hydrogenrelated donor profiles Trans Tech Publications Ltd , 2011 ISBN: 9783037852323 DOI: 10.4028/www.scientific.net/SSP.178-179.375
Le-Huu M. , Schmitt H. , Noll S. , Grieb M. , Schrey FF. , Bauer AJ. , Frey L. , Ryssel H. :Investigation of the reliability of 4H-SiC MOS devices for high temperature applications In: Microelectronics Reliability 51 (2011 ), S. 1346-1350 ISSN: 0026-2714 DOI: 10.1016/j.microrel.2011.03.015
Lorentz VRH. , Schwarzmann H. , März M. , Bauer AJ. , Ryssel H. , Frey L. , Poure P. , Braun F. :A novel PWM control for a bi-directional full-bridge DC-DC converter with smooth conversion mode transitions In: International Journal of Electronics 98 (2011 ), S. 1025-1054 ISSN: 0020-7217 DOI: 10.1080/00207217.2011.567035
Mueller J. , Boescke TS. , Braeuhaus D. , Schroeder U. , Boettger U. , Sundqvist J. , Kuecher P. , Mikolajick T. , Frey L. :Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applications In: Applied Physics Letters 99 (2011 ), Art.Nr.: 112901 ISSN: 0003-6951 DOI: 10.1063/1.3636417
Murakami K. , Rommel M. , Yanev V. , Bauer A. , Frey L. :Current voltage characteristics through grains and grain boundaries of high-k dielectric thin films measured by tunneling atomic force microscopy Frontiers of Characterization and Metrology for Nanoelectronics: 2011 (Grenoble ) DOI: 10.1063/1.3657879
Murakami K. , Rommel M. , Yanev V. , Erlbacher T. , Bauer AJ. , Frey L. :A highly sensitive evaluation method for the determination of different current conduction mechanisms through dielectric layers In: Journal of Applied Physics 110 (2011 ), Art.Nr.: 054104 ISSN: 0021-8979 DOI: 10.1063/1.3631088
Müller J. , Schröder UP. , Böschke TS. , Müller I. , Böttger U. , Wilde L. , Sundqvist J. , Lemberger M. , Kücher P. , Mikolajick T. , Frey L. :Ferroelectricity in yttrium-doped hafnium oxide In: Journal of Applied Physics 110 (2011 ), S. Article number 114113 ISSN: 0021-8979 DOI: 10.1063/1.3667205
Paskaleva A. , Lemberger M. , Bauer AJ. , Frey L. :Implication of oxygen vacancies on current conduction mechanisms in TiN/Zr1-xAlxO2/TiN metal-insulator-metal structures In: Journal of Applied Physics 109 (2011 ), Art.Nr.: 076101 ISSN: 0021-8979 DOI: 10.1063/1.3565056
Roll G. , Goldbach M. , Frey L. :Leakage current and defect characterization of p+n-source/drain diodes In: Microelectronics Reliability 51 (2011 ), S. 2081-2085 ISSN: 0026-2714 DOI: 10.1016/j.microrel.2011.05.015
Roll G. , Jakschik S. , Burenkov A. , Goldbach M. , Mikolajick T. , Frey L. :Impact of carbon junction implant on leakage currents and defect distribution: Measurement and simulation In: Solid-State Electronics (2011 ), S. 170-176 ISSN: 0038-1101 DOI: 10.1016/j.sse.2011.06.016
Roll G. , Jakschik S. , Goldbach M. , Wachowiak A. , Mikolajick T. , Frey L. :Analysis of the effect of germanium preamorphization on interface defects and leakage current for high-k metal-oxide-semiconductor field-effect transistor In: Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena 29 (2011 )ISSN: 0734-211X DOI: 10.1116/1.3521479
Schmitt H. , Haeublein V. , Bauer A. , Frey L. :Influence of annealing parameters on surface roughness, mobility, and contact resistance of aluminium implanted 4H SiC 2011 ISBN: 9783037850794 DOI: 10.4028/www.scientific.net/MSF.679-680.417
Schneider O. , Epple P. , Teuber E. , Meyer B. , Jank MPM. , Rauh C. , Delgado A. :Jet printing of colloidal solutions - Numerical modeling and experimental verification of the influence of ink and surface parameters on droplet spreading In: Advanced Powder Technology 22 (2011 ), S. 266-270 ISSN: 0921-8831 DOI: 10.1016/j.apt.2011.02.003
Walther S. , Polster S. , Jank MPM. , Thiem H. , Ryssel H. , Frey L. :Tuning of charge carrier density of ZnO nanoparticle films by oxygen plasma treatment In: Advanced Powder Technology 22 (2011 ), S. 253-256 ISSN: 0921-8831 DOI: 10.1016/j.apt.2011.01.012
Walther S. , Polster S. , Meyer B. , Jank MPM. , Ryssel H. , Frey L. :Properties of SiO2 and Si3 N4 as gate dielectrics for printed ZnO transistors In: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics 29 (2011 )ISSN: 2166-2754 DOI: 10.1116/1.3524291
Weis S. , Körmer R. , Jank M. , Lemberger M. , Otto M. , Ryssel H. , Peukert W. , Frey L. :Conduction Mechanisms and Environmental Sensitivity of Solution-Processed Silicon Nanoparticle Layers for Thin-Film Transistors In: Small 7 (2011 ), S. 2853-2857 ISSN: 1613-6829 DOI: 10.1002/smll.201100703
Yanev V. , Rommel M. , Bauer AJ. , Frey L. :Characterization of thickness variations of thin dielectric layers at the nanoscale using scanning capacitance microscopy In: Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena 29 (2011 )ISSN: 0734-211X DOI: 10.1116/1.3532822
vom Dorp J. , Berberich SE. , Erlbacher T. , Bauer A. , Ryssel H. , Frey L. :Monolithic RC-snubber for power electronic applications 2011 IEEE 9th International Conference on Power Electronics and Drive Systems, PEDS 2011 (Singapore ) DOI: 10.1109/PEDS.2011.6147217
vom Dorp J. , Erlbacher T. , Bauer AJ. , Ryssel H. , Frey L. :Dielectric layers suitable for high voltage integrated trench capacitors In: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics 29 (2011 )ISSN: 2166-2754 DOI: 10.1116/1.3525283
2010
Baer E. , Kunder D. , Evanschitzky P. , Lorenz J. :Coupling of Equipment and Feature-Scale Profile Simulation for Dry-Etching of Polysilicon Gate Lines Workshop (Bologna )In: Proceedings of SISPAD 2010 2010
Bauer A. , Friedrichs P. , Krieger M. , Pensl G. , Rupp R. , Seyller T. (Hrsg.):Silicon Carbide and Related Materials 2009 - Parts 1 and 2 Stafa-Zuerich : 2010 (Materials Science Forum, Bd. 645-648)ISBN: 0-87849-279-8
Erdmann A. , Fühner T. , Evanschitzky P. :Mask diffraction analysis and optimization for EUV masks DOI: 10.1117/12.814119
Erlbacher T. , Bauer AJ. , Frey L. :Reduced on resistance in LDMOS devices by integrating trench gates into planar technology In: IEEE Electron Device Letters 31 (2010 ), S. 464-466 ISSN: 0741-3106 DOI: 10.1109/LED.2010.2043049
Fet A. , Haeublein V. , Bauer AJ. , Ryssel H. , Frey L. :Effective work function tuning in high-κ dielectric metal-oxide-semiconductor stacks by fluorine and lanthanide doping In: Applied Physics Letters 96 (2010 ), Art.Nr.: 053506 ISSN: 0003-6951 DOI: 10.1063/1.3303976
Fet A. , Haeublein V. , Bauer AJ. , Ryssel H. , Frey L. :Modeling of the effective work function instability in metal/high-κ dielectric stacks In: Journal of Applied Physics 107 (2010 ), Art.Nr.: 124514 ISSN: 0021-8979 DOI: 10.1063/1.3391280
Hinz J. , Bauer AJ. , Frey L. :Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application In: Semiconductor Science and Technology 25 (2010 )ISSN: 0268-1242 DOI: 10.1088/0268-1242/25/7/075009
Hinz J. , Bauer AJ. , Thiede T. , Fischer RA. , Frey L. :Evaluation of NbN thin films grown by MOCVD and plasma-enhanced ALD for gate electrode application in high-k/SiO2 gate stacks In: Semiconductor Science and Technology 25 (2010 ), Art.Nr.: 045009 ISSN: 0268-1242 DOI: 10.1088/0268-1242/25/4/045009
Jahn J. , Erdmann A. , Fühner T. , Liu S. , Shao F. , Barenbaum A. :Topography-aware BARC optimization for double patterning SPIE Advanced Lithography (San Jose , 23. Februar 2010 - 25. Februar 2010 )In: Proceedings of the SPIE 2010 DOI: 10.1117/12.846441
Jambreck JD. , Schmitt H. , Amon B. , Rommel M. , Bauer AJ. , Frey L. :Fabrication of metallic SPM tips by combining UV nanoimprint lithography and focused ion beam processing In: Microelectronic Engineering 87 (2010 ), S. 1123-1126 ISSN: 0167-9317 DOI: 10.1016/j.mee.2009.11.040
Kaiser RJ. , Koffel S. , Pichler P. , Bauer AJ. , Amon B. , Claverie A. , Benassayag G. , Scheiblin P. , Frey L. , Ryssel H. :Honeycomb voids due to ion implantation in germanium In: Thin Solid Films 518 (2010 ), S. 2323-2325 ISSN: 0040-6090 DOI: 10.1016/j.tsf.2009.09.138
Körmer R. , Jank M. , Ryssel H. , Schmid HJ. , Peukert W. :Aerosol synthesis of silicon nanoparticles with narrow size distribution-Part 1: Experimental investigations In: Journal of Aerosol Science 41 (2010 ), S. 998--1007 ISSN: 0021-8502 DOI: 10.1016/j.jaerosci.2010.05.007
Laven J. , Job R. , Schulze HJ. , Niedernostheide FJ. , Häublein V. , Schulze H. , Schustereder W. , Ryssel H. , Frey L. :The Impact of Helium Co-Implantation on Hydrogen Induced Donor Profiles in Float Zone Silicon In: ECS Transactions 33 (2010 ), S. 51-62 ISSN: 1938-5862 DOI: 10.1149/1.3485682
Le-Huu M. , Schrey F. , Grieb M. , Schmitt H. , Haeublein V. , Bauer A. , Ryssel H. , Frey L. :NMOS logic circuits using 4H-SiC MOSFETs for high temperature applications Trans Tech Publications Ltd , 2010 ISBN: 9780878492794 DOI: 10.4028/www.scientific.net/MSF.645-648.1143
Lorentz VR. , Berberich SEB. , März M. , Bauer AJ. , Ryssel H. , Poure P. , Braun F. :Light-load efficiency increase in high-frequency integrated DC-DC converters by parallel dynamic width controlling In: Analog Integrated Circuits and Signal Processing 62 (2010 ), S. 1-8 ISSN: 0925-1030 DOI: 10.1007/s10470-009-9323-9
Pichler P. , Burenkov A. , Lorenz J. , Kampen C. , Frey L. :Future challenges in CMOS process modeling In: Thin Solid Films 518 (2010 ), S. 2478-2484 ISSN: 0040-6090 DOI: 10.1016/j.tsf.2009.09.150
Rommel M. , Jambreck JD. , Ebm C. , Platzgummer E. , Bauer AJ. , Frey L. :Influence of FIB patterning strategies on the shape of 3D structures: Comparison of experiments with simulations In: Microelectronic Engineering 87 (2010 ), S. 1566-1568 ISSN: 0167-9317 DOI: 10.1016/j.mee.2009.10.054
Rommel M. , Spoldi G. , Yanev V. , Beuer S. , Amon B. , Jambreck J. , Petersen S. , Bauer AJ. , Frey L. :Comprehensive study of focused ion beam induced lateral damage in silicon by scanning probe microscopy techniques In: Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena 28 (2010 ), S. 595-607 ISSN: 0734-211X DOI: 10.1116/1.3431085
Schmitt H. , Rommel M. , Bauer A. , Frey L. , Bich A. , Eisner M. , Voelkel R. , Hornung M. :Full wafer microlens replication by UV imprint lithography In: Microelectronic Engineering 87 (2010 ), S. 1074--1076 ISSN: 0167-9317 DOI: 10.1016/j.mee.2009.11.069
Walther S. , Schäfer S. , Jank MPM. , Thiem H. , Peukert W. , Frey L. , Ryssel H. :Influence of annealing temperature and measurement ambient on TFTs based on gas phase synthesized ZnO nanoparticles In: Microelectronic Engineering 87 (2010 ), S. 2312-2316 ISSN: 0167-9317 DOI: 10.1016/j.mee.2010.03.009
2009
Erdmann A. , Fuhrmann J. , Fiebach A. , Uhle M. , Szmanda C. , Truong C. :A model of self-limiting residual acid diffusion for pattern doubling In: Microelectronic Engineering 86 (2009 ), S. 792 ISSN: 0167-9317 DOI: 10.1016/j.mee.2008.10.023
Erdmann A. , Pflaum C. , Rahimi Z. :Finite integration (FI) method for modeling optical wavers in lithography masks 7th International Fraunhofer IISB Lithography Simulation Workshop (Hersbruck )In: 7th International Fraunhofer IISB Lithography Simulation Workshop 2009
Fet A. , Haeublein V. , Bauer AJ. , Ryssel H. , Frey L. :Lanthanum implantation for threshold voltage control in metal/high-k devices In: Microelectronic Engineering 86 (2009 ), S. 1782-1785 ISSN: 0167-9317 DOI: 10.1016/j.mee.2009.03.042
Motzek K. , Bich A. , Erdmann A. , Hornung M. , Hennemeyer M. , Meliorisz PB. , Hofmann U. , Ünal N. , Voelkel R. , Partel S. , Hudek P. :Optimization of illumination pupils and mask features for proximity printing Micro- and Nano-Engineering (Ghent, Belgium )In: Micro- and Nano-Engineering 2009 DOI: 10.1016/j.mee.2009.10.038
Mueller J. , Boescke TS. , Schroeder U. , Reinicke M. , Oberbeck L. , Zhou D. , Weinreich W. , Kuecher P. , Lemberger M. , Frey L. :Improved manufacturability of ZrO2 MIM capacitors by process stabilizing HfO2 addition In: Microelectronic Engineering 86 (2009 ), S. 1818-1821 ISSN: 0167-9317 DOI: 10.1016/j.mee.2009.03.076
Patsis GP. , Drygiannakis D. , Raptis T. , Gogoliddes E. , Erdmann A. :Advanced lithography models for strict process control in the 32nm technology node In: Microelectronic Engineering 86 (2009 ), S. 513 ISSN: 0167-9317 DOI: 10.1016/j.mee.2009.01.050
Reibold D. , Shao F. , Erdmann A. , Peschel U. :Extraordinary low transmission effects for ultra-thin patterned metal films In: Optics Express 17 (2009 ), S. 544 ISSN: 1094-4087 DOI: 10.1364/OE.17.000544
Shao F. , Evanschitzky P. , Fühner T. , Erdmann A. :Efficient Analysis of Three Dimensional EUV Mask Induced Imageing Artifacts Using the Waveguide Decomposition Method BACUS (Monterey )In: BACUS 2009 DOI: 10.1117/12.833464
Shao F. , Evanschitzky P. , Fühner T. , Erdmann A. :Rigorous diffraction simulations of topographic wafer stacks in double patterning In: Microelectronic Engineering 86 (2009 ), S. 289 ISSN: 0167-9317 DOI: 10.1016/j.mee.2008.11.078
Straue N. , Rauscher M. , Walther S. , Faber H. , Roosen A. :Preparation and soft lithographic printing of nano-sized ITO-dispersions for the manufacture of electrodes for TFTs In: Journal of Materials Science 44 (2009 ), S. 6011 - 6019 ISSN: 0022-2461 DOI: 10.1007/s10853-009-3804-1 URL: http://link.springer.com/article/10.1007%2Fs10853-009-3804-1
Yanev V. , Erlbacher T. , Rommel M. , Bauer AJ. , Frey L. :Comparative study between conventional macroscopic IV techniques and advanced AFM based methods for electrical characterization of dielectrics at the nanoscale In: Microelectronic Engineering 86 (2009 ), S. 1911-1914 ISSN: 0167-9317 DOI: 10.1016/j.mee.2009.03.094
2008
Erlbacher T. , Jank MPM. , Ryssel H. , Frey L. , Engl R. , Walter A. , Sezi R. , Dehm C. :Self-aligned growth of organometallic layers for nonvolatile memories: Comparison of liquid-phase and vapor-phase deposition In: Journal of The Electrochemical Society 155 (2008 ), S. H693-H697 ISSN: 0013-4651 DOI: 10.1149/1.2957907
Martinez Limia A. , Pichler P. , Steen C. , Paul S. , Lerch W. :Modeling of the Diffusion and Activation of Arsenic in Silicon Including Clustering and Precipitation Gettering and Defect Engineering in Semiconductor Technology XII (Italien , 14. Oktober 2007 - 19. Oktober 2007 )In: Gettering and Defect Engineering in Semiconductor Technology XII 2008 DOI: 10.4028/www.scientific.net/SSP.131-133.277
Pei L. , Duscher G. , Steen C. , Pichler P. , Ryssel H. , Napolitani E. , De Salvador D. , Piro AM. , Terrasi AT. , Severac F. , Cristiano F. , Ravichandran K. , Gupta N. , Windl W. :Detailed arsenic concentration profiles at Si/SiO2 interfaces In: Journal of Applied Physics 104 (2008 ), Art.Nr.: 043507 ISSN: 0021-8979 DOI: 10.1063/1.2967713
Rommel M. , Bauer A. , Ryssel H. :Detailed Carrier Lifetime Analysis of Iron-Contaminated Boron-doped Silicon by Comparison of Simulation and Measurement In: Journal of The Electrochemical Society 155 (2008 ), S. H117 ISSN: 0013-4651 DOI: 10.1149/1.2819628
2007
Christoph D. , Fühner T. , Tollkühn B. , Erdmann A. , Kókai G. :Application of a memetic algorithm to the calibration of micro-lithography In: Grosan, Crina; Abraham, Ajith (Hrsg.): Hybrid Evolutionary Algorithms , Berlin Heidelberg : Springer , 2007 , S. 201-239 ISBN: 978-3-540-73296-9 DOI: 10.1007/978-3-540-73297-6
Krieger M. , Semmelroth K. , Weber HB. , Pensl G. , Rambach M. , Frey L. :Impurity Conduction in Silicon Carbide In: Materials Science Forum 556-557 (2007 ), S. 364 ISSN: 0255-5476
Lemberger M. , Schön F. , Dirnecker T. , Jank M. , Frey L. , Ryssel H. , Paskaleva A. , Zürcher S. , Bauer A. :MOCVD of Hafnium Silicate Films Obtained from a Single-Source Precusor on Silicon and Germanium for Gate-Dielectric Applications In: Chemical Vapor Deposition 13 (2007 ), S. 105-111 ISSN: 0948-1907 DOI: 10.1002/cvde.200606511
Schmitt H. , Frey L. , Ryssel H. , Rommel M. , Lehrer C. :UV nanoimprint materials: Surface energies, residual layers, and imprint quality In: Journal of Vacuum Science & Technology B 25 (2007 ), S. 785-790 ISSN: 1071-1023 DOI: 10.1116/1.2732742
Wellmann P. , Karl U. , Kleber S. , Schmitt H. :Cathodoluminescence characterization of organic semiconductor materials for light emitting device applications In: Journal of Applied Physics 101 (2007 )ISSN: 0021-8979 DOI: 10.1063/1.2743090
2006
Berberich SEB. , März M. , Bauer A. , Beuer S. , Ryssel H. :Active Fuse 2006 IEEE International Symposium on Power Semiconductor Devices and IC's (Naples , 4. Juni 2006 - 8. Juni 2006 )In: Symposium on Power Semiconductor Devices and IC's 2006 DOI: 10.1109/ISPSD.2006.1666088
Dirnecker T. , Ryssel H. :Untersuchung von Aufladungseffekten bei der Ionenimplantation Aachen : Shaker Verlag , 2006 (Erlanger Berichte Mikroelektronik)ISBN: 3-8322-5081-6
Ghicov A. , Macák J. , Tsuchiya H. , Kunze J. , Häublein V. , Frey L. , Schmuki P. :Ion implantation and annealing for an efficient N-doping of TiO2 nanotubes In: Nano Letters 6 (2006 ), S. 1080-1082 ISSN: 1530-6984 DOI: 10.1021/nl0600979
Häublein V. , Frey L. , Ryssel H. :The impact of mass resolution on molybdenum contamination for B, P, BF 2, and As implantations ION IMPLANTATION TECHNOLOGY: 16th International Conference on Ion Implantation Technology, IIT 2006 (Marseille ) URL: https://www.scopus.com/record/display.uri?eid=2-s2.0-33846941211&origin=inward
Jank M. , Kandziora C. , Frey L. , Ryssel H. :Well Design in a Bulk CMOS Technology with Low Mask Count 2006 16th International Conference on Ion Implantation Technology (Marseille , 11. Juni 2006 - 16. November 2006 )In: AIP Conference Proceedings Volume 866, Issue 1 2006 DOI: 10.1063/1.2401476
Lugstein A. , Frey L. , Bertagnolli E. , Platzgummer E. , Biedermann A. , Langfischer H. , Eder-Kapl S. , Kuemmel M. , Cernusca S. , Loeschner H. , Lehrer C. :Simulation of ion beam direct structuring for 3D nanoimprint template fabrication In: Microelectronic Engineering 83 (2006 ), S. 936-939 ISSN: 0167-9317 DOI: 10.1016/j.mee.2006.01.140
Oechsner R. , Pfeffer M. , Pfitzner L. , Ryssel H. , Beer K. , Boldin M. , de Mey B. , Engelhard M. , O'Murchu C. , Ditmar J. , Colson P. , Madore M. , Krahn L. , Kempe W. , Luisman E. :Creation of E-Learning Content for Microelectronics Manufacturing 12th IFAC Symposium on Information Control Problems in Manufacturing (Saint-Etienne, France , 17. Mai 2006 - 19. Mai 2006 )In: Proceeding of the 12th IFAC Symposium on Information Control Problems in Manufacturing 2006
Peto G. , Khanh N. , Horvath Z. , Molnar G. , Gyulai J. , Kotai E. , Guczi L. , Frey L. :Nanoscale morphology and photoemission of arsenic implanted germanium films In: Journal of Applied Physics 99 (2006 )ISSN: 0021-8979 DOI: 10.1063/1.2190717
Rambach M. , Frey L. , Bauer A. , Ryssel H. :Extracting activation and compensation ratio from aluminum implanted 4H-SiC by modeling of resistivity measurements 2006 ISBN: 9780878494255 URL: https://www.scopus.com/record/display.uri?eid=2-s2.0-37849042244&origin=inward
2005
Bauer A. , Paskaleva A. , Lemberger M. , Frey L. , Ryssel H. :Thin HfxTiySixO films with varying Hf to Ti contents as candidates for high-k dielectrics 207th ECS Meeting (Quebec ) URL: https://www.scopus.com/record/display.uri?eid=2-s2.0-31844445401&origin=inward
Berberich SE. , Bauer A. , Frey L. , Ryssel H. :Triple trench gate IGBTs 17th International Symposium on Power Semiconductor Devices and ICs, ISPSD'05 (Sanata Barbara, CA ) URL: https://www.scopus.com/record/display.uri?eid=2-s2.0-27744589892&origin=inward
Döhler G. , Renner F. , Klar O. , Eckardt M. , Schwanhäußer A. , Malzer S. , Driscoll D. , Hanson M. , Gossard A. , Loata g. , Löffler T. , Roskos H. :THz-photomixer based on quasi-ballistic transport In: Semiconductor Science and Technology 20 (2005 )ISSN: 0268-1242 DOI: 10.1088/0268-1242/20/7/007
Frey L. , Bauer A. , Ryssel H. :Chemical vapor phase precipitation of new materials for sub 50 nm transistors Chemische Dampfphasenabscheidung von neuen Materialien für Sub-50-nm-Transistoren In: Chemie Ingenieur Technik 77 (2005 ), S. 1215-1216 ISSN: 0009-286X DOI: 10.1002/cite.200590331
Haeublein V. , Sadrawetz S. , Frey L. , Martinz HP. , Ryssel H. :Investigations into the wear of a WL10 ion source In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 237 (2005 ), S. 341-345 ISSN: 0168-583X DOI: 10.1016/j.nimb.2005.05.011
Häublein V. , Frey L. , Ryssel H. :Additional peaks in mass spectra due to charge exchange events and dissociation of molecular ions during extraction In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 237 (2005 ), S. 346-350 ISSN: 0168-583X DOI: 10.1016/j.nimb.2005.05.012
Lemberger M. , Paskaleva A. , Zürcher S. , Bauer A. , Frey L. , Ryssel H. :Electrical properties of hafnium silicate films obtained from a single-source MOCVD precursor In: Microelectronics Reliability 45 (2005 ), S. 819-822 ISSN: 0026-2714 DOI: 10.1016/j.microrel.2004.11.040
Lemberger M. , Schön F. , Dirnecker T. , Jank M. , Paskaleva A. , Bauer A. , Frey L. , Ryssel H. :High-k Hafnium Silicate Films on Silicon and Germanium Wafers by MOCVD Using a Single-Source Precursor In: Proceedings of the 15th European Conference on Chemical Vapor Deposition (EUROCVD-15), Electrochemical Society , - : The Electrochemical Society, Inc. , 2005 , S. 873
Müller R. , Künecke U. , Weingärtner R. , Schmitt H. , Desperrier P. , Wellmann P. :High Al-doping of SiC using a modified PVT (M-PVT) growth set-up In: Materials Science Forum 483 (2005 ), S. 31-34 ISSN: 0255-5476 DOI: 10.4028/www.scientific.net/MSF.483-485.31
Rambach M. , Bauer A. , Frey L. , Friedrichs P. , Ryssel H. :Annealing of Aluminium Implanted 4H-SiC: Comparison of Furnace and Lamp Annealing In: Materials Science Forum 483-485 (2005 ), S. 483 ISSN: 0255-5476
Rambach M. , Schmid F. , Krieger M. , Frey L. , Bauer A. , Pensl G. , Ryssel H. :Implantation and Annealing of Aluminum in 4H Silicon Carbide In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 237 (2005 ), S. 68-71 ISSN: 0168-583X DOI: 10.1016/j.nimb.2005.04.079
Rommel M. , Groß M. , Ettinger A. , Lemberger M. , Bauer A. , Frey L. , Ryssel H. :Characterization of interface state densitiesby photocurrent analysis: Comparison of results for different insulator layers In: Microelectronic Engineering 80 (2005 ), S. 50-53 ISSN: 0167-9317 DOI: 10.1016/j.mee.2005.04.042
Rommel M. , Groß M. , Frey L. , Bauer A. , Ryssel H. :Wafer scale characterization of interface state densities without test structures by photocurrent analysis 35th European Solid State Device Research Conference (Grenoble ) URL: https://www.scopus.com/record/display.uri?eid=2-s2.0-31744443828&origin=inward
Ryssel H. , Ullrich M. , Burenkov A. :Ion Sputtering at Grazing Incidence for SIMS-Analysis In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 228 (2005 ), S. 373-377 ISSN: 0168-583X DOI: 10.1016/j.nimb.2004.10.073
Schmitt H. , Müller R. , Maier M. , Winnacker A. , Wellmann P. :Photoluminescence study of in-situ rare earth doped PVT-grown SiC single crystals In: Materials Science Forum 483 (2005 ), S. 445-448 ISSN: 0255-5476 DOI: 10.4028/www.scientific.net/MSF.483-485.445
2004
Frey L. , Rambach M. , Weiss R. , Bauer A. , Ryssel H. :Investigation of rapid thermal annealed pn-junctions in SiC 2004 URL: https://www.scopus.com/record/display.uri?eid=2-s2.0-8744264042&origin=inward
Fühner T. , Erdmann A. , Farkas R. , Tollkühn B. , Kókai G. :Genetic Algorithms to Improve Mask and Illumination Geometries in Lithographic Imaging Systems 1st European Workshop on Hardware Optimisation (EVOHOT2004) (Coimbra , 3. April 2004 - 5. April 2004 )In: Günther R. Raidl, Stefano Cagnoni, Jürgen Branke, David Wolfe Corne, Rolf Drechsler, Yaochu Jin, Colin G. Johnson, Penousal Machado, Elena Marchiori, Franz Rothlauf, George D. Smith, Giovanni Squillero (Hrsg.): Applications of Evolutionary Computing - EvoWorkshops 2004: EvoBIO, EvoCOMNET, EvoHOT, EvoISAP, EvoMUSART, and EvoSTOC , Berlin Heidelberg : 2004 DOI: 10.1007/978-3-540-24653-4_22
Lehrer C. , Frey L. , Petersen S. , Ryssel H. , Schäfer M. , Sulzbach T. :Integration of field emitters into scanning probe microscopy sensors using focused ion and electron beams In: Journal of Vacuum Science & Technology B 22 (2004 ), S. 1402-1406 ISSN: 1071-1023 URL: https://www.scopus.com/record/display.uri?eid=2-s2.0-3242722353∨igin=inward
Lemberger M. , Paskaleva A. , Zürcher S. , Bauer A. , Frey L. , Ryssel H. :Electrical characterization and reliability aspects of zirconium silicate films obtained from novel MOCVD precursors In: Microelectronic Engineering 72 (2004 ), S. 315-320 ISSN: 0167-9317 DOI: 10.1016/j.mee.2004.01.010
Nguyen PH. , Lorenz J. , Baer E. , Ryssel H. :Modeling of Chemical-Mechanical Polishing on Patterned Wafers as Part of Integrated Topography Process Simulation MAM2004 (Leuven, Belgium , 7. März 2004 - 10. März 2004 )In: Microelectronic Engineering 2004 DOI: 10.1016/j.mee.2004.07.018 URL: http://www.sciencedirect.com/science?_ob=MImg&_imagekey=B6V0W-4D1V29P-2-C&_cdi=5657&_user=746735&_orig=browse&_coverDate=10/01/2004&_sk=999239998&view=c&wchp=dGLbVlb-zSkzk&md5=4039dffb5d8e4b57dba393cf896acaef&ie=/sdarticle.pdf
Paskaleva A. , Bauer A. , Lemberger M. , Zürcher S. :Physical and Electrical Properties of Thin High-k HfxTiySizO Film With varying Hf to Ti Ratios DOI: 10.1063/1.1702101
Schmidt C. , Petrik P. , Schneider C. , Fried M. , Löhner T. , Bársony I. , Gyulai J. , Ryssel H. :Optical Characterization of Ferroelectric Strontium-Bismut-Tantalate (SBT) Thin Films In: Thin Solid Films 455-456 (2004 ), S. 495-499 ISSN: 0040-6090 DOI: 10.1016/j.tsf.2003.11.248
Weiss R. , Frey L. , Ryssel H. :Modeling of the influence of Schottky barrier inhomogeneities on SiC diode characteristics 2004 URL: https://www.scopus.com/record/display.uri?eid=2-s2.0-8644276383&origin=inward
Yasenov NN. , Berberich SE. , Frey L. , Ryssel H. :Design, fabrication and characterization of a microactuator for nebulization of fluids
2003
Bauer A. , Rambach M. , Frey L. , Weiss R. , Rupp R. , Friedrichs P. , Schörner R. , Peters DP. :Surface Properties and Electrical Characteristics of Rapid Thermal Annealed 4H-SiC 2003 URL: https://www.scopus.com/record/display.uri?eid=2-s2.0-18744421066&origin=inward
Berberich SE. , Bauer A. , Frey L. , Ryssel H. :Trench sidewall doping for lateral power devices 33rd European Solid-State Device Research Conference, ESSDERC 2003 DOI: 10.1109/ESSDERC.2003.1256893
Dirnecker T. , Frey L. , Bauer A. , Ryssel H. , Ruf A. , Henke D. , Beyer A. :Influence of Antenna Shape and Resist Patterns on Charging Damage During Ion Implantation Ion Implantation Technology (Taos, New Mexico, USA )In: IEEE Proc. on Ion Implantation Technology-2002 , Piscataway : 2003 DOI: 10.1109/IIT.2002.1257996
Erdmann A. , Farkas R. , Fühner T. , Tollkühn B. , Kókai G. :Mask and Source Optimization for Lithographic Imaging Systems Wave-Optical Systems Engineering II (San Diego, CA , 31. Dezember 2003 - 31. Dezember 2003 )In: Wyrowski, F. (Hrsg.): Wave-Optical Systems Engineering II, SPIE 5182 2003 DOI: 10.1117/12.504732 URL: http://www2.informatik.uni-erlangen.de/publication/download/spie5182_12.ps.gz
Farkas R. , Kókai G. , Erdmann A. , Fühner T. , Tollkühn B. :Optimization of one-and two dimensional masks in the optical lithography Treffen der Fachgruppe Maschinelles Lernen, Wissensentdeckung, Data Mining der Gesellschaft für Informatik (FGML 2003) (Karlsruhe , 6. Oktober 2003 - 8. Oktober 2003 )In: Treffen der Fachgruppe Maschinelles Lernen, Wissensentdeckung, Data Mining der Gesellschaft für Informatik (FGML 2003) 2003 URL: http://www2.informatik.uni-erlangen.de/publication/download/fgml03.ps.gz
Frey L. , Lehrer C. :Materials processing by focused ion beams for TEM sample preparation and nanostructuring Materialbearbeitung mittels fokussierter ionenstrahlen zur TEM-probenpräparation und nanostrukturierung In: Praktische Metallographie 40 (2003 ), S. 184-192 ISSN: 0032-678X URL: https://www.scopus.com/record/display.uri?eid=2-s2.0-0038681908∨igin=inward
Frey L. , Lehrer C. , Ryssel H. :Nanoscale effects in focused ion beam processing In: Applied Physics A-Materials Science & Processing 76 (2003 ), S. 1017-1023 ISSN: 0947-8396 DOI: 10.1007/s00339-002-1943-1
Henke D. , Walther S. , Weemann J. , Dirnecker T. , Ruf A. , Beyer A. , Lee K. :Characterization of charging damage in plasma doping Ion Implantation Technology (Taos, New Mexico, USA )In: IEEE Proc. on Ion Implantation TEchnology-2002 , Piscataway : 2003 DOI: 10.1109/IIT.2002.1257973
Paskaleva A. , Lemberger M. , Zürcher S. , Bauer A. , Frey L. , Ryssel H. :Electrical Characterization of Zirconium Silicate Films Obtained from Novel MOCVD Precursors WoDiM 2002 (Grenoble, France )In: Proceedings of the 12th Workshop on Dielectrics in Microelectronics (WoDiM 2002) , Grenoble, France : 2003 DOI: 10.1016/S0026-2714(03)00180-X
Tollkühn B. , Fühner T. , Matiut D. , Erdmann A. , Semmler A. , Küchler B. , Kókai G. :Will Darwins's Law Help Us to Improve Our Resist Models? Advances in Resist Technology and Processing, SPIE 5039 (Santa Clara, CA , 23. Februar 2003 - 23. Februar 2003 )In: Theodore H. Fedynyshyn (Hrsg.): Advances in Resist Technology and Processing XX 2003 DOI: 10.1117/12.485078 URL: http://www2.informatik.uni-erlangen.de/publication/download/spie5039-33.pdf
2002
Beyer A. , Hausmann A. , Junack M. , Radecker J. , Ruf A. , Dirnecker T. :Plasma induced damage monitoring for HDP processes 7th Int. Symp. On Plasma & Process Induced Damage (Maui, Hawaii, USA )In: Proc. 7th Int. Symp. On Plasma & Process Induced Damage , Santa Clara, USA : 2002 DOI: 10.1109/PPID.2002.1042615
Boubekeur H. , Mikolajick T. , Bauer A. , Frey L. , Ryssel H. :Effect of barium contamination on gate oxide integrity in high-k dram In: Journal of Non-Crystalline Solids 303 (2002 ), S. 12-16 ISSN: 0022-3093 DOI: 10.1016/S0022-3093(02)00957-2
Boubekeur H. , Mikolajick T. , Pamler W. , Höpfner J. , Frey L. , Ryssel H. :Platinum contamination issues in ferroelectric memories In: Journal of Applied Physics 92 (2002 ), S. 3257-3265 ISSN: 0021-8979 DOI: 10.1063/1.1500414
Dirnecker T. , Ruf A. , Frey L. , Beyer A. , Bauer A. , Henke D. , Ryssel H. :Influence of photoresist pattern on charging damage during high current ion implantation 7th International Symposium on Plasma- and Process-Induced Damage, P2ID 2002 DOI: 10.1109/PPID.2002.1042620
Frey L. , Ryssel H. (Hrsg.):Erlanger Berichte Mikroelektronik Aachen : 2002 ISBN: 3-8322-0960-3
Fujita M. , Tajima J. , Nakagawa T. , Abo S. , Kinomura A. , Pászti F. , Takai M. , Schork R. , Frey L. , Ryssel H. :Development of enhanced depth-resolution technique for shallow dopant profiles In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 190 (2002 ), S. 26-33 ISSN: 0168-583X DOI: 10.1016/S0168-583X(01)01248-4
Häublein V. , Frey L. , Ryssel H. :ENCOTION - A new simulation tool for energetic contamination analysis 2002 14th IEEE International Conference on Ion Implantation Technology, IIT 2002 DOI: 10.1109/IIT.2002.1257977
Häublein V. , Frey L. , Ryssel H. , Walser H. :Investigation of lanthanum contamination from a lanthanated tungsten ion source 2002 14th IEEE International Conference on Ion Implantation Technology, IIT 2002 DOI: 10.1109/IIT.2002.1258011
Jank M. , Frey L. , Bauer A. , Ryssel H. :Investigation of implantation-induced defects in thin gate oxides using low field tunnel currents 2002 14th IEEE International Conference on Ion Implantation Technology, IIT 2002 DOI: 10.1109/IIT.2002.1257972
Leistner T. , Lehmbacher K. , Härter P. , Schmidt C. , Bauer A. , Frey L. , Ryssel H. :MOCVD of titanium dioxide on the basis of new precursors In: Journal of Non-Crystalline Solids 303 (2002 ), S. 64-68 ISSN: 0022-3093 DOI: 10.1016/S0022-3093(02)00965-1
Weiss R. , Frey L. , Ryssel H. :Different ion implanted edge terminations for Schottky diodes on SiC 2002 14th IEEE International Conference on Ion Implantation Technology, IIT 2002 DOI: 10.1109/IIT.2002.1257958
2001
Boubekeur H. , Mikolajick T. , Höpfner J. , Dehm C. , Pamler W. , Steiner J. , Kilian G. , Kolbesen B. , Bauer A. , Frey L. , Ryssel H. :Barium, strontium and bismuth contamination in CMOS processes Trans Tech Publications Ltd , 2001 ISBN: 9783908450573 DOI: 10.4028/www.scientific.net/SSP.76-77.9
Boubekeur H. , Mikolajick T. , Nagel N. , Dehm C. , Pamler W. , Bauer A. , Frey L. , Ryssel H. :Impact of platinum contamination on ferroelectric memories 13th International Symposium on Integrated Ferroelectrics (Colorado Springs, CO ) DOI: 10.1080/10584580108015667
Dziomba T. , Danzebrink H. , Lehrer C. , Frey L. , Sulzbach T. , Ohlsson O. :High-resolution constant-height imaging with apertured silicon cantilever probes In: Journal of Microscopy 202 (2001 ), S. 22-27 ISSN: 0022-2720 DOI: 10.1046/j.1365-2818.2001.00858.x
Jank MPM. , Lemberger M. , Bauer A. , Frey L. , Ryssel H. :Electrical reliability aspects of through the gate implanted MOS structures with thin oxides In: Microelectronics Reliability 41 (2001 ), S. 987-990 ISSN: 0026-2714 DOI: 10.1016/S0026-2714(01)00053-1
Lehrer C. , Frey L. , Petersen S. , Ryssel H. :Limitations of focused ion beam nanomachining In: Journal of Vacuum Science & Technology B 19 (2001 ), S. 2533-2538 ISSN: 1071-1023 DOI: 10.1116/1.1417553
Lehrer C. , Frey L. , Petersen S. , Sulzbach T. , Ohlsson O. , Dziomba T. , Danzebrink H. , Ryssel H. :Fabrication of silicon aperture probes for scanning near-field optical microscopy by focused ion beam nano machining In: Microelectronic Engineering (2001 ), S. 721-728 ISSN: 0167-9317 DOI: 10.1016/S0167-9317(01)00463-4
Schür C. , Marek T. , Strunk HP. , Tautz S. , Steen C. , Kiesel P. , Malzer S. , Döhler G. , Niecke M. , Schröder F. , Mayer R. , Knappe R. :Substrate misorientation as additional parameter for low temperature growth of GaAs In: Physik mikrostrukturierter Halbleiter 23 (2001 ), S. 145-150 ISSN: 1434-2073
Weiss R. , Frey L. , Ryssel H. :Tungsten, nickel, and molybdenum Schottky diodes with different edge termination In: Applied Surface Science 184 (2001 ), S. 413-418 ISSN: 0169-4332 DOI: 10.1016/S0169-4332(01)00527-X
2000
Boubekeur H. , Höpfner J. , Mikolajick T. , Dehm C. , Frey L. , Ryssel H. :Aspects of barium contamination in high dielectric dynamic random access memories In: Journal of The Electrochemical Society 147 (2000 ), S. 4297-4300 ISSN: 0013-4651 DOI: 10.1149/1.1394057
Funk K. , Häublein V. , Chakor H. , Ameen M. , Frey L. , Ryssel H. , Ramirez A. :Investigation of molybdenum contamination in 11B+ and 31P+ implants 2000 13th International Conference on Ion Implantation Technology, IIT 2000 (Alpbach ) DOI: 10.1109/.2000.924252
Jank M. , Lemberger M. , Frey L. , Ryssel H. :Gate oxide damage due to through the gate implantation in MOS-structures with ultrathin and standard oxides 2000 13th International Conference on Ion Implantation Technology, IIT 2000 (Alpbach ) DOI: 10.1109/IIT.2000.924101
Kröner F. , Schork R. , Frey L. , Burenkov A. , Ryssel H. :Phosphorus Ion Shower Implantation for special power IC applications 2000 13th International Conference on Ion Implantation Technology, IIT 2000 (Alpbach ) DOI: 10.1109/.2000.924191
Lehrer C. , Frey L. , Petersen S. , Mizutam M. , Takai M. , Ryssel H. :Defects and gallium - Contamination during focused ion beam micro machining 2000 13th International Conference on Ion Implantation Technology, IIT 2000 (Alpbach ) DOI: 10.1109/.2000.924248
Tajima J. , Park Y. , Fujita M. , Takai M. , Schork R. , Frey L. , Ryssel H. :Enhanced depth-resolution analysis with medium energy ion scattering (meis) for shallow junction profiling 2000 13th International Conference on Ion Implantation Technology, IIT 2000 (Alpbach ) DOI: 10.1109/.2000.924225
Weiland R. , Boit C. , Dawes N. , Dzieslaty A. , Demm E. , Ebersberger B. , Frey L. , Geyer S. , Hirsch A. , Lehrer C. , Meis P. , Kamolz M. , Lezec H. , Rettenmaier H. , Tlttes W. , Trefchler R. , Zimmermann H. :Wafer Conserving Full Range Construction Analysis for IC Fabrication and Process Development Based on FIB /Dual Beam Inline Application Proceedings of the 26th International Symposium for Testing and Failure Analysis (Bellevue, WA )In: Proceedings of the 26th International Symposium for Testing and Failure Analysis 2000 URL: https://www.scopus.com/record/display.uri?eid=2-s2.0-10744227841∨igin=inward
Yavas O. , Ochiai C. , Takai M. , Park Y. , Lehrer C. , Lipp S. , Frey L. , Ryssel H. , Hosono A. , Okuda S. :Field emitter array fabricated using focused ion and electron beam induced reaction In: Journal of Vacuum Science & Technology B 18 (2000 ), S. 976-979 ISSN: 1071-1023 DOI: 10.1116/1.591310
1999
Bauer A. , Mayer P. , Frey L. , Haeublein V. , Ryssel H. :Forming nitrided gate oxides by nitrogen implantation into the substrate before gate oxidation by RTO Proceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98) (Kyoto, Jpn )In: Proceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98) , Piscataway, NJ, United States : 1999 URL: https://www.scopus.com/record/display.uri?eid=2-s2.0-0033338246&origin=inward
Bauer A. , Mayer P. , Frey L. , Haeublein V. , Ryssel H. :Implantation of nitrogen into polysilicon to suppress boron penetration through the gate oxide Proceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98) (Kyoto, Jpn )In: Proceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98) , Piscataway, NJ, United States : 1999 URL: https://www.scopus.com/record/display.uri?eid=2-s2.0-0033322718&origin=inward
Biró L. , Márk G. , Gyulai J. , Havancsák K. , Lipp S. , Lehrer C. , Frey L. , Ryssel H. :AFM and STM investigation of carbon nanotubes produced by high energy ion irradiation of graphite In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 147 (1999 ), S. 142-147 ISSN: 0168-583X DOI: 10.1016/S0168-583X(98)00565-5
Biró L. , Márk G. , Gyulai J. , Rozlosnik N. , Kürti J. , Szabó B. , Frey L. , Ryssel H. :Scanning probe method investigation of carbon nanotubes produced by high energy ion irradiation of graphite In: Carbon 37 (1999 ), S. 739-744 ISSN: 0008-6223 DOI: 10.1016/S0008-6223(98)00264-4
Biró L. , Szabó B. , Márk G. , Gyulai J. , Havancsák K. , Kürti J. , Dunlop A. , Frey L. , Ryssel H. :Carbon nanotubes produced by high energy (E > 100 MeV), heavy ion irradiation of graphite In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 148 (1999 ), S. 1102-1105 ISSN: 0168-583X DOI: 10.1016/S0168-583X(98)00738-1
Danzebrink H. , Dziomba T. , Sulzbach T. , Ohlsson O. , Lehrer C. , Frey L. :Nano-slit probes for near-field optical microscopy fabricated by focused ion beams In: Journal of Microscopy 194 (1999 ), S. 335-339 ISSN: 0022-2720 DOI: 10.1046/j.1365-2818.1999.00505.x
Dziomba T. , Sulzbach T. , Ohlsson O. , Lehrer C. , Frey L. , Danzebrink H. :Ion beam-treated silicon probes operated in transmission and cross-polarized reflection mode near-infrared scanning near-field optical microscopy (NIR-SNOM) In: Surface and Interface Analysis 27 (1999 ), S. 486-490 ISSN: 0142-2421 URL: https://www.scopus.com/record/display.uri?eid=2-s2.0-0032643999&origin=inward
Park Y. , Nagai T. , Takai M. , Lehrer C. , Frey L. , Ryssel H. :Comparison of beam-induced deposition using ion microprobe In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 148 (1999 ), S. 25-31 ISSN: 0168-583X URL: https://www.scopus.com/record/display.uri?eid=2-s2.0-0033513926&origin=inward
Park Y. , Takai M. , Lehrer C. , Frey L. , Ryssel H. :Impurity incorporation during beam assisted processing analyzed using nuclear microprobe In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 158 (1999 ), S. 487-492 ISSN: 0168-583X DOI: 10.1016/S0168-583X(99)00371-7
Park Y. , Takai M. , Lehrer C. , Frey L. , Ryssel H. :Investigation of Cu films by focused ion beam induced deposition using nuclear microprobe In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 158 (1999 ), S. 493-498 ISSN: 0168-583X DOI: 10.1016/S0168-583X(99)00501-7
Schmidt C. , Lehnert W. , Leistner T. , Frey L. , Ryssel H. :MOCVD of ferroelectric thin films Proceedings of the 1999 12th European Conference on Chemical Vapour Deposition ((EUROCVD12) (Barcelona, Spain )In: Proceedings of the 1999 12th European Conference on Chemical Vapour Deposition ((EUROCVD12) , Les Ulis Cedex A, France : 1999 URL: https://www.scopus.com/record/display.uri?eid=2-s2.0-0033188109&origin=inward
1998
Montandon C. , Bourenkov A. , Frey L. , Pichler P. , Biersack JP. :Distortion of sims profiles due to ion beam mixing: Shallow arsenic implants in silicon In: Radiation Effects and Defects in Solids 145 (1998 ), S. 213-223 ISSN: 1042-0150 DOI: 10.1080/10420159808225765
Park Y. , Takai M. , Lehrer C. , Frey L. , Ryssel H. :Microprobe analysis of Pt films deposited by beam induced reaction In: Japanese Journal of Applied Physics 37 (1998 ), S. 7042-7046 ISSN: 0021-4922 URL: https://www.scopus.com/record/display.uri?eid=2-s2.0-4243307043&origin=inward
Park Y. , Takai M. , Nagai T. , Kishimoto T. , Seidl A. , Lehrer C. , Frey L. , Ryssel H. :Microanalysis of masklessly fabricated micro structures using nuclear microprobe In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms (1998 ), S. 373-378 ISSN: 0168-583X DOI: 10.1016/S0168-583X(97)00709-X
1997
Biró L. , Gyulai J. , Havancsák K. , Didyk A. , Bogen S. , Frey L. , Ryssel H. :New method based on atomic force microscopy for in-depth characterization of damage in Si irraadiate with 209 MeV Kr In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 122 (1997 ), S. 559-562 ISSN: 0168-583X DOI: 10.1016/S0168-583X(96)00662-3
Biró L. , Gyulai J. , Havancsák K. , Didyk A. , Frey L. , Ryssel H. :In-depth damage distribution by scanning probe methods in targets irradiated with 200 MeV ions In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms (1997 ), S. 32-37 ISSN: 0168-583X DOI: 10.1016/S0168-583X(96)01106-8
Frey L. , Stoemenos J. , Schork R. , Nejim A. , Hemment P. :Synthesis of SiC by high temperature C+ implantation into SiO2: The role of Si/SiO2 interface In: Journal of The Electrochemical Society 144 (1997 ), S. 4314-4320 ISSN: 0013-4651 DOI: 10.1149/1.1838184
Park Y. , Takai M. , Nagai T. , Kishimoto T. , Lehrer C. , Frey L. , Ryssel H. :Microanalysis of impurity contamination in masklessly etched area using focused ion beam In: Japanese Journal of Applied Physics 36 (1997 ), S. 7712-7716 ISSN: 0021-4922 URL: https://www.scopus.com/record/display.uri?eid=2-s2.0-0031346547&origin=inward
Saggio M. , Montandon C. , Bourenkov A. , Frey L. , Pichler P. :Distortion of sims profiles due to ion beam mixing In: Radiation Effects and Defects in Solids 141 (1997 ), S. 37-52 ISSN: 1042-0150 DOI: 10.1080/10420159708211555
Schwenke H. , Knoth J. , Fabry L. , Pahlke S. , Scholz R. , Frey L. :Measurement of shallow arsenic impurity profiles in semiconductor silicon using time-of-flight secondary ion mass spectrometry and total reflection X-ray fluorescence spectrometry In: Journal of The Electrochemical Society 144 (1997 ), S. 3979-3983 ISSN: 0013-4651 DOI: 10.1149/1.1838122
1996
Bogen S. , Herden M. , Frey L. , Ryssel H. :Reduction of lateral parasitic current flow by buried recombination layers formed by high energy implantation of C or O into silicon Proceedings of the 1996 11th International Conference on Ion Implantation Technology (Austin, TX, USA )In: Ishida E.; Mehta S.; Banerjee S.; Current M.; Smith T.C.; et al (Hrsg.): Proceedings of the 1996 11th International Conference on Ion Implantation Technology , Piscataway, NJ, United States : 1996 URL: https://www.scopus.com/record/display.uri?eid=2-s2.0-0030373286∨igin=inward
Frey L. , Bogen S. , Herden M. , Ryssel H. :Deep implants for semiconductor device applications In: Radiation Effects and Defects in Solids 140 (1996 ), S. 87-101 ISSN: 1042-0150 DOI: 10.1080/10420159608212943
Jiao G. , Bogen S. , Frey L. , Ryssel H. :A multi-laminate wire mesh ionizer for a Cs sputter negative ion source In: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 382 (1996 ), S. 332-334 ISSN: 0168-9002 DOI: 10.1016/S0168-9002(96)00701-2
Lipp S. , Frey L. , Lehrer C. , Demm E. , Pauthner S. , Ryssel H. :A comparison of focused ion beam and electron beam induced deposition processes In: Microelectronics Reliability 36 (1996 ), S. 1779-1782 ISSN: 0026-2714 URL: https://www.scopus.com/record/display.uri?eid=2-s2.0-0030274008∨igin=inward
Lipp S. , Frey L. , Lehrer C. , Frank B. , Demm E. , Pauthner S. , Ryssel H. :Tetramethoxysilane as a precursor for focused ion beam and electron beam assisted insulator (SiOx) deposition In: Journal of Vacuum Science & Technology B 14 (1996 ), S. 3920-3923 ISSN: 1071-1023 URL: https://www.scopus.com/record/display.uri?eid=2-s2.0-0000353753∨igin=inward
Lipp S. , Frey L. , Lehrer C. , Frank B. , Demm E. , Ryssel H. :Investigations on the topology of structures milled and etched by focused ion beams In: Journal of Vacuum Science & Technology B 14 (1996 ), S. 3996-3999 ISSN: 1071-1023 URL: https://www.scopus.com/record/display.uri?eid=2-s2.0-0001398692∨igin=inward
1995
Bogen S. , Körber K. , Gong L. , Frey L. , Ryssel H. :Comparison of retrograde and conventional p-wells in regard of latch-up susceptibility In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 96 (1995 ), S. 411-415 ISSN: 0168-583X DOI: 10.1016/0168-583X(94)00530-3
Frey L. , Ryssel H. , Bogen S. , Hobler G. , Simionescu A. :Model for the electronic stopping of channeled ions in silicon around the stopping power maximum In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 106 (1995 ), S. 47-50 ISSN: 0168-583X DOI: 10.1016/0168-583X(95)00676-1
Gong L. , Petersen S. , Frey L. , Ryssel H. :Improved delineation technique for two dimensional dopant profiling In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 96 (1995 ), S. 133-138 ISSN: 0168-583X DOI: 10.1016/0168-583X(94)00472-2
Lipp S. , Frey L. , Franz G. , Demm E. , Petersen S. , Ryssel H. :Local material removal by focused ion beam milling and etching In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 106 (1995 ), S. 630-635 ISSN: 0168-583X DOI: 10.1016/0168-583X(95)00778-4
1994
Biró L. , Gyulai J. , Bogen S. , Frey L. , Ryssel H. :Investigation of the effect of altered defect structure produced by photon assisted implantation on the diffusion of As in silicon during thermal annealing In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 85 (1994 ), S. 925-928 ISSN: 0168-583X DOI: 10.1016/0168-583X(94)95952-8
Frey L. , Pichler P. , Kasko I. , Thies I. , Lipp S. , Streckfuss N. , Gong L. , Ryssel H. :Practical aspects of ion beam analysis of semiconductor structures In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 85 (1994 ), S. 356-362 ISSN: 0168-583X DOI: 10.1016/0168-583X(94)95844-0
Gong L. , Bogen S. , Frey L. , Jung W. , Ryssel H. :Analytical description of high energy implantation profiles of boron and phosphorus into crystalline silicon In: Radiation Effects and Defects in Solids 127 (1994 ), S. 385-395 ISSN: 1042-0150 DOI: 10.1080/10420159408221046
Gyulai J. , Ryssel H. , Biró L. , Frey L. , Kuki A. , Kormány T. , Serfozo G. , Khanh N. :Athermal effects in ion implanted layers In: Radiation Effects and Defects in Solids 127 (1994 ), S. 397-404 ISSN: 1042-0150 DOI: 10.1080/10420159408221047
1993
Biró L. , Gyulai J. , Ryssel H. , Frey L. , Kormány T. , Tuan N. , Horváth z. :Photon assisted implantation (PAI) In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms (1993 ), S. 607-611 ISSN: 0168-583X DOI: 10.1016/0168-583X(93)96191-E
Bogen S. , Gong L. , Frey L. , Ryssel H. :High energy implantation of 10B and 11B into (100) silicon in channel and in random direction In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms (1993 ), S. 659-662 ISSN: 0168-583X DOI: 10.1016/0168-583X(93)96203-O
Frey L. , Ergele W. , Falter T. , Gong L. , Ryssel H. :Analysis of microstructured samples by focused ion beam sample preparation In: Microelectronic Engineering 21 (1993 ), S. 375-378 ISSN: 0167-9317 DOI: 10.1016/0167-9317(93)90095-M
Gong L. , Frey L. , Bogen S. , Ryssel H. :A novel delineation technique for 2D-profiling of dopants in crystalline silicon In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 74 (1993 ), S. 186-190 ISSN: 0168-583X DOI: 10.1016/0168-583X(93)95040-C
Kasko I. , Dehm C. , Frey L. , Ryssel H. :Effect of ion-beam mixing temperature on cobalt silicide formation In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms (1993 ), S. 786-789 ISSN: 0168-583X DOI: 10.1016/0168-583X(93)90682-V
Kroninger F. , Streckfuss N. , Frey L. , Falter T. , Ryzlewicz C. , Pfitzner L. , Ryssel H. :Application of advanced contamination analysis for qualification of wafer handling systems and chucks In: Applied Surface Science 63 (1993 ), S. 93-98 ISSN: 0169-4332 DOI: 10.1016/0169-4332(93)90070-R
Ryssel H. , Frey L. , Streckfuss N. , Schork R. , Kroninger F. , Falter T. :Contamination control and ultrasensitive chemical analysis In: Applied Surface Science 63 (1993 ), S. 79-87 ISSN: 0169-4332 DOI: 10.1016/0169-4332(93)90068-M
1992
Antos L. , Gyulai J. , Khanh N. , Frey L. :End-of-range disorder influenced by inherent oxygen in silicon In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 71 (1992 ), S. 399-405 ISSN: 0168-583X DOI: 10.1016/0168-583X(92)95357-W
Frey L. , Bogen S. , Gong L. , Jung W. , Ryssel H. , Gyulai J. :High energy ion implantation for semiconductor application at Fraunhofer-AIS, Erlangen In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 62 (1992 ), S. 410-415 ISSN: 0168-583X DOI: 10.1016/0168-583X(92)95267-U
Frey L. , Kroninger F. , Streckfusse N. , Ryssel H. , Margail J. :Characterization of metal impurities in silicon-on-insulator material In: Materials Science and Engineering B-Advanced Functional Solid-State Materials 12 (1992 ), S. 195-198 ISSN: 0921-5107 DOI: 10.1016/0921-5107(92)90285-H
Gong L. , Bogen S. , Frey L. , Jung W. , Ryssel H. :Simulation of high energy implantation profiles in crystalline silicon In: Microelectronic Engineering (1992 ), S. 495-498 ISSN: 0167-9317 DOI: 10.1016/0167-9317(92)90482-7
Streckfusse N. , Frey L. , Zielonka G. , Kroninger F. , Ryzlewicz C. , Ryssel H. :Analysis of trace metals on silicon surfaces In: Fresenius Zeitschrift für Analytische Chemie 343 (1992 ), S. 765-768 ISSN: 0016-1152 DOI: 10.1007/BF00633562
1991