2016 - 2020 | LEB

Dissertationen aus dem Jahr 2020

Name	Thema / Titel

J. Förthner	Laterale und vertikale Ladungskompensationsstrukturen in 4H-Siliziumkarbid Datum der Promotion: 21.10.2020
M. Scharin-Mehlmann	Nano- and Micro-Patterned PDMS Thin-Film for Biocompatible Devices / Nano- und mikrosturkturierte Polydimethylsiloxan Substrate für biomedizinische Anwendungen Datum der Promotion: 07.08.2020
X. Liu	Anwendung von Nanopartikel-ZnO Dünnschichttransistoren in einfachen Schaltungen Datum der Promotion: 05.06.2020
A. Zörner	Development and Investigation of a Printed Multi-Ion-Selective Sensor System Towards Healthcare Applications Datum der Promotion: 27.05.2020

Dissertationen aus dem Jahr 2019

Name	Thema / Titel

A. Johnsson	Post-implantation annealing of platinum in silicon Datum der Promotion: 20.11.19
C. Joffe	Modellbasierter Entwurf und Charakterisierung eines induktiven Ladesystems für Elektrofahrzeuge Datum der Promotion: 08.04.2019
H. Gehles	Fortschrittliche Detektions- und Entfernungsmethode von Polymerrückständen in Through Silicon Vias (TSV) Datum der Promotion: 15.03.2019
T. Onanuga	Process modeling of two-photon and grayscale laser direct-write lithography Datum der Promotion: 12.03.2019
P. Puls	Simulationsgestützte Effizienzoptimierung von industriellen Kaltwassersystemen mit thermischen Speichern Datum der Promotion: 26.02.2019 OPUS FAU Link
C. Matthus	Technologische Justierung der spektralen Empfindlichkeit von 4H-SiC-UV-Sensoren Datum der Promotion: 08.01.2019 OPUS FAU Link

Dissertationen aus dem Jahr 2018

Name	Thema / Titel

S. Kraft	Entwicklung und Charakterisierung eines doppelseitig gekühlten leistungselektronischen Moduls Datum der Promotion: 12.12.2018
M. Steinberger	Rückverstromung von wasserstoffhaltigen Gasgemischen in PEM-Brennstoffzellen am Beispiel des Epitaxieabgases Datum der Promotion: 11.12.2018
M. Förthner	Geprägte Bragg-Gitter Sensoren auf Basis von Hybridpolymeren Datum der Promotion: 04.12.2018
C. Bayer	Untersuchung der elektrischen Feldstärke und des Teilentladungsverhaltens an keramischen Schaltungsträgern Datum der Promotion: 17.08.2018
T. Heckel	Charakterisierung dynamischer Eigenschaften und Modellbildung neuartiger Leistungshalbleiterbauelemente auf Basis von SiC und GaN Datum der Promotion: 26.07.2018
A. Hutzler	Entwicklung fortschrittlicher Flüssigzellenarchitekturen für leistungsfähige in situ Transmissionselektronenmikroskopie in den Materialwissenschaften Datum der Promotion: 25.07.2018 OPUS FAU Link
A. Rosskopf	Berechnung von frequenzabhängigen Leistungsverlusten in induktiven Systemen mit Litzenkabeln mittels eines gekoppelten numerischen Ansatzes Datum der Promotion: 27.04.2018 OPUS FAU Link

Dissertationen aus dem Jahr 2017

Name	Thema / Titel

R. Randoll	Investigations on a Packaging Technology for PCB Integrated Power Electronics Datum der Promotion: 02.11.2017 Abstract: –
L. Stockmeier	Heavily n-type doped silicon and the dislocation formation during ist growth by the Czochralski method Datum der Promotion: 26.10.2017 Abstract: –
A. Hürner	SiC-BIFET – ein bipolarer SiC-Feldeffekttransistor für das Mittelspannungsnetz Datum der Promotion: 10.07.2017 Abstract: –
A. Tobisch	Telezentrische Deflektometrie zur Nanotopographiemessung von Halbleiterscheiben Datum der Promotion: 06.07.2017 Abstract: –
M. Rumler	Großflächige Herstellung plasmonischer Filterstrukturen mittels substratkonformer Imprintlithografie Datum der Promotion: 04.07.2017 Abstract: –
E. Badr	Platinum diffusion for advanced silicon power devices Datum der Promotion: 27.01.2017 Abstract: Since the mid-1970s, platinum has been utilized for the lifetime engineering of minority charge carriers in silicon power devices. While previously platinum was introduced via diffusion from a silicide, contemporary process flows feature the implantation of platinum and its partial removal by phosphorous diffusion gettering. In this work, the first systematic investigations of such processes are presented. The experimental findings are completed by quantitative models which allow the calculation of platinum profiles in industrial environments. Since existing models were found to fail to describe platinum diffusion from silicide sources for industrial process flows, a new parameterization had to be found. The goal was reached by combining experiments from literature with own dedicated experiments in which the temperature was ramped down at the end of the process. The model developed is now also able to describe the distribution of platinum for such processes. Moreover, a rigorous analysis of the platinum profiles on the basis of the developed model allowed narrowing down the parameter space for the intrinsic point defects in silicon. Compared to platinum diffusion from a platinum silicide layer, ion implantation offers the advantage of precise control over the doping process. The post-implantation annealing of platinum was studied for a wide range of implantation conditions and temperatures. Based on the experimental results, a quantitative model was developed. Combining existing models for platinum diffusion and the evolution of ion implantation damage and completing it to include impurity clustering, it allows the simulation of platinum profiles after implantation and annealing. To further engineer the platinum distribution across the wafer, phosphorus diffusion gettering was studied. It resulted in an inhomogeneous distribution of platinum across the wafer. Such distributions are suitable for local lifetime control of devices. On a physical level, platinum is suggested to form complexes with phosphorus. A model which includes the supersaturation of self-interstitials due to the implantation and diffusion of phosphorus was developed and was able to successfully reproduce the measured profiles of substitutional platinum. Platinum-hydrogen complexes can form unintentionally by various manufacturing processes. In this thesis, the electrical properties of platinum-hydrogen complexes were studied. The hydrogen was introduced into platinum-doped samples by wet chemical etching treatments. The fingerprints of platinum-hydrogen complexes deduced from DLTS measurements were compared to literature to complement previous studies. As a result, two new levels were suggested as platinum-hydrogen related. The experiments and simulations carried out in this work have led to a better understanding of silicon point defects, platinum diffusion and platinum interaction with phosphorus and hydrogen. The developed simulation models represent a basis for improving the electrical properties and development of fast switching devices such as IGBTs and PIN diodes.

Dissertationen aus dem Jahr 2016

Name	Thema / Titel

S. Noll	Prozessabhängigkeit der Feldeffektbeweglichkeit und Stabilität der Einsatzspannung von 4H-SiC MOS Transistoren Datum der Promotion: 12.10.2016 Abstract: – [Diese Dissertation ist unter der ISBN 978-3-8440-4872-8 in der Reihe „Erlanger Berichte Mikroelektronik“ im Shaker-Verlag erschienen.]
D. Xu	Inverse Image Modeling for Defect Detection and Optical System Characterization Datum der Promotion: 05.10.2016 OPUS FAU Link Abstract: Optical projection lithography is the predominant microlithography technique that is used in the semiconductor fabrication process. It uses light to transfer the information from a patterned photomask to a photoresist on the top of the wafer by a projection system. The fabrication of photomasks cannot avoid small defects. Therefore, accurate metrology and measurements of photomasks are very important for ensuring the reliable performance of the mask and the final product. Since most of the defects are below the resolution limit of the projection systems, computational methods are very helpful to recover the required information on the defect from the observed projection images and to predict the printability of the defect. In general, mask inspection and defect detection are performed by capturing the images of photomasks and by image processing. Presently used metrology equipments and computational techniques provide excellent performance for current integrated circuit (IC) fabrications. However, due to the shrinkage of the minimum acceptable defect size with respect to lithographic critical dimensions, and multilayer defects introduced by the usage of extreme ultraviolet (EUV) lithography, mask inspection and defect detection are becoming more critical. Reconstructing the defect geometries from projection images of photomaks and to understand the printability of defects are very important. However, there is no analytical solution for this kind of inverse reconstruction problem. This thesis proposes new approaches for the reconstruction of defect properties and geometry parameters from measured images of defective and defect-free masks for deep ultraviolet (DUV) and EUV lithography. In this thesis, a new defect reconstruction procedure for absorber defects on DUV photomasks from projection images is investigated and proposed. Firstly, the possibility of detecting and characterizing a defect with a known shape from the intensity distributions of projection images of the mask at different focus positions is investigated, the dependencies of the retrieval results on optimizers, illumination settings, defect sizes, and reference images are presented. The evaluation of the performance of the technique is done by comparing the retrieval errors resulting from different defect shapes, mask patterns, and types of noise. Moreover, the sensitivity of the defect detection to Zernike aberrations of the optical image projection system and the retrieval accuracy for different mask models and types of defects are investigated. Considering the actual situation that the defect shape is unknown, the technique is extended to reconstruct sparsely distributed absorber defects inside a known mask layout. The basic idea of compressed sensing is employed in the setup of the proposed algorithm. The footprint of the defect, which is the measured or simulated difference between images of masks with and without defects, is used to reconstruct the position, shape, and transmission of defects. The dependency of the reconstruction results on defect sizes and types of defects, as well as the sensitivity of the technique to noise are investigated. Another important and originative defect reconstruction technique of the thesis is to characterize multilayer defects on EUV masks from EUV projection images at different focus positions. Multilayer defects change the phase of the reflected light, details of the phase information of the reflected light in the vicinity of the defect have an important impact on the printing behavior of the defect. To retrieve the phase distribution of the defect, the transport-of-intensity equation (TIE) is applied in the thesis. The defect-induced intensity and phase modifications and their dependency from defect geometry parameters are analyzed by several selected optical properties of multilayer defects, including the minima and width of the intensity and phase distribution, and the central intensity value. To reconstruct the defect geometry parameters from the intensity and phase of a defect, a principal component analysis (PCA) is employed to parameterize the intensity and phase distributions into principal component coefficients. In order to construct the base functions of the PCA, a combination of a reference multilayer defect and appropriate pupil filters is introduced to obtain the designed sets of intensity and phase distributions. Finally, an artificial neural network (ANN) is applied to correlate the principal component coefficients of the intensity and the phase of the defect with the defect geometry parameters and to reconstruct the unknown defect geometry parameters. The performance of the proposed approach is evaluated both for mask blank defects and for defects in the vicinity of an absorber pattern.
A. Salinaro	Charakterisierung und Entwicklung der 4H-SiC/SiO2 Grenzfläche für Leistungs-MOSFET Anwendungen Datum der Promotion: 13.05.2016 Abstract: –
T. Hilden	Technologievergleich und Nutzenbewertung zwischen Silizium-und Siliziumkarbidleistungshalbleitern durch versuchsgestützte Simulation am Beispiel hartschaltender DC/DC-Wandler für Luftfahrtanwendungen Datum der Promotion: 04.05.2016 Abstract: – [Diese Dissertation ist unter der ISBN 978-3-9588-6102-2 in der Reihe „Erlanger Berichte Mikroelektronik“ im Shaker-Verlag erschienen.]
C. Banzhaf	Entwicklung und Charakterisierung von Trench-Gate-Strukturen für 4H-SiC Leistungs-MOSFETs Datum der Promotion: 22.02.2016 Abstract: – [Diese Dissertation ist unter der ISBN 978-3-8440-4372-3 in der Reihe „Erlanger Berichte Mikroelektronik“ im Shaker-Verlag erschienen.]
S. Polster	Nanopartikuläre ZnO-Schichten für Dünnschichttransistoren Datum der Promotion: 18.01.2016 Abstract: – [Diese Dissertation ist unter der ISBN 978-3-8440-4377-8 in der Reihe „Erlanger Berichte Mikroelektronik“ im Shaker-Verlag erschienen.]