Dr. Tobias Dirnecker

Dr.-Ing. Tobias Dirnecker, Akad. ORat

Akademischer Oberrat

Department Elektrotechnik-Elektronik-Informationstechnik (EEI)
Lehrstuhl für Elektronische Bauelemente

Raum 1.157
Cauerstr. 6
91058 Erlangen

Seminar über Bachelorarbeiten
- 2SWS; ECTS studies (ECTS credits: 2,5)
- Termin:
  - Fr 10:15-11:45, Raum 0.111 (außer vac) ICS
Seminar über Masterarbeiten (Sem MA)
- 2SWS
- Termin:
  - Fr 14:15-15:45, Raum 0.111 (außer vac) ICS

Stolzke T., Dirnecker T., Schwarz J., Frey L.:
Investigation of magnetic properties from a manganese-zinc-ferrite polymer bonded material
In: International Journal of Applied Electromagnetics and Mechanics 59 (2019), S. 97-104
ISSN: 1383-5416
DOI: 10.3233/JAE-171244

Scharin-Mehlmann M., Häring A., Rommel M., Dirnecker T., Friedrich O., Frey L., Gilbert D.:
Nano- and micro-patterned S-, H-, and X-PDMS for cell-based applications: Comparison of wettability, roughness, and cell-derived parameters
In: Frontiers in Bioengineering and Biotechnology 6 (2018), Art.Nr.: 51
ISSN: 2296-4185
DOI: 10.3389/fbioe.2018.00051
Stolzke T., Dirnecker T., Schwarz J., Frey L.:
Investigation of magnetic properties from a manganese–zinc–ferrite polymer bonded material
In: International Journal of Applied Electromagnetics and Mechanics Pre-press (2018), S. 1-8
ISSN: 1383-5416
DOI: 10.3233/JAE-171244

Scharin M., Rommel M., Dirnecker T., Marhenke J., Herrmann B., Rumler M., Fader R., Frey L., Herrmann M.:
Bioactivation of plane and patterned PDMS thin films by wettability engineering
In: BioNanoScience 4 (2014), S. 251-262
ISSN: 2191-1630
DOI: 10.1007/s12668-014-0145-6

Lemberger M., Schön F., Dirnecker T., Jank M., Frey L., Ryssel H., Paskaleva A., Zürcher S., Bauer A.:
MOCVD of Hafnium Silicate Films Obtained from a Single-Source Precusor on Silicon and Germanium for Gate-Dielectric Applications
In: Chemical Vapor Deposition 13 (2007), S. 105-111
ISSN: 0948-1907
DOI: 10.1002/cvde.200606511

Dirnecker T., Ryssel H.:
Untersuchung von Aufladungseffekten bei der Ionenimplantation
Aachen: Shaker Verlag, 2006
(Erlanger Berichte Mikroelektronik)
ISBN: 3-8322-5081-6

Lemberger M., Schön F., Dirnecker T., Jank M., Paskaleva A., Bauer A., Frey L., Ryssel H.:
High-k Hafnium Silicate Films on Silicon and Germanium Wafers by MOCVD Using a Single-Source Precursor
In: Proceedings of the 15th European Conference on Chemical Vapor Deposition (EUROCVD-15), Electrochemical Society, -: The Electrochemical Society, Inc., 2005, S. 873

Dirnecker T., Frey L., Bauer A., Ryssel H., Ruf A., Henke D., Beyer A.:
Influence of Antenna Shape and Resist Patterns on Charging Damage During Ion Implantation
Ion Implantation Technology (Taos, New Mexico, USA)
In: IEEE Proc. on Ion Implantation Technology-2002, Piscataway: 2003
DOI: 10.1109/IIT.2002.1257996
Henke D., Walther S., Weemann J., Dirnecker T., Ruf A., Beyer A., Lee K.:
Characterization of charging damage in plasma doping
Ion Implantation Technology (Taos, New Mexico, USA)
In: IEEE Proc. on Ion Implantation TEchnology-2002, Piscataway: 2003
DOI: 10.1109/IIT.2002.1257973

Beyer A., Hausmann A., Junack M., Radecker J., Ruf A., Dirnecker T.:
Plasma induced damage monitoring for HDP processes
7th Int. Symp. On Plasma & Process Induced Damage (Maui, Hawaii, USA)
In: Proc. 7th Int. Symp. On Plasma & Process Induced Damage, Santa Clara, USA: 2002
DOI: 10.1109/PPID.2002.1042615
Dirnecker T., Ruf A., Frey L., Beyer A., Bauer A., Henke D., Ryssel H.:
Influence of photoresist pattern on charging damage during high current ion implantation
7th International Symposium on Plasma- and Process-Induced Damage, P2ID 2002
DOI: 10.1109/PPID.2002.1042620