Dr.-Ing. Tobias Dirnecker, Akad. ORat
Vorlesung (VORL)
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Halbleiterbauelemente
Physikalische Grundlagen der Halbleiterbauelemente
- Di 16:15-17:45, Raum H5
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Nano IV: Halbleiter
Veranstaltung für Studiengang Nanotechnologie.
- Do 10:15-11:45, Raum 0.111
Praktikum (PR)
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Praktikum Mechatronische Systeme
Hinweis: die Veranstaltung wird in diesem Semester zunächst digital beginnen. Spätere Präsenztermine sind ggf. möglich. Weitere Informationen im StudOn-Bereich zum Praktikum.
- Mi 14:15-17:45
- Einzeltermin am 14.04.2021 14:00-16:00, Raum Zoom-Meeting
- Einzeltermin am 07.07.2021 9:00-12:00
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Praktikum Mikroelektronik
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Praktikum Technologie der Silicium-Halbleiterbauelemente
- Mi 8:15-11:45, Raum 0.111
Seminar (SEM)
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Seminar über Bachelorarbeiten (Sem BA)
- Fr 10:15-11:45, Raum 0.111
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Seminar über Masterarbeiten (Sem MA)
- Fr 12:15-13:45, Raum 0.111
Sonstige Lehrveranstaltung (SL)
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Forschungspraktikum am LEB (10 ECTS) (Prak FOR-LEB_10)
Nach Vereinbarung; Nur für EEI Master
- Zeit/Ort n.V.
2019
Investigation of magnetic properties from a manganese-zinc-ferrite polymer bonded material
In: International Journal of Applied Electromagnetics and Mechanics 59 (2019), S. 97-104
ISSN: 1383-5416
DOI: 10.3233/JAE-171244
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2018
Nano- and micro-patterned S-, H-, and X-PDMS for cell-based applications: Comparison of wettability, roughness, and cell-derived parameters
In: Frontiers in Bioengineering and Biotechnology 6 (2018), Art.Nr.: 51
ISSN: 2296-4185
DOI: 10.3389/fbioe.2018.00051
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Investigation of magnetic properties from a manganese–zinc–ferrite polymer bonded material
In: International Journal of Applied Electromagnetics and Mechanics Pre-press (2018), S. 1-8
ISSN: 1383-5416
DOI: 10.3233/JAE-171244
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2014
Bioactivation of plane and patterned PDMS thin films by wettability engineering
In: BioNanoScience 4 (2014), S. 251-262
ISSN: 2191-1630
DOI: 10.1007/s12668-014-0145-6
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2007
MOCVD of Hafnium Silicate Films Obtained from a Single-Source Precusor on Silicon and Germanium for Gate-Dielectric Applications
In: Chemical Vapor Deposition 13 (2007), S. 105-111
ISSN: 0948-1907
DOI: 10.1002/cvde.200606511
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2006
Untersuchung von Aufladungseffekten bei der Ionenimplantation
Aachen: Shaker Verlag, 2006
(Erlanger Berichte Mikroelektronik)
ISBN: 3-8322-5081-6
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2005
High-k Hafnium Silicate Films on Silicon and Germanium Wafers by MOCVD Using a Single-Source Precursor
In: Proceedings of the 15th European Conference on Chemical Vapor Deposition (EUROCVD-15), Electrochemical Society, -: The Electrochemical Society, Inc., 2005, S. 873
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2003
Influence of Antenna Shape and Resist Patterns on Charging Damage During Ion Implantation
Ion Implantation Technology (Taos, New Mexico, USA)
In: IEEE Proc. on Ion Implantation Technology-2002, Piscataway: 2003
DOI: 10.1109/IIT.2002.1257996
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Characterization of charging damage in plasma doping
Ion Implantation Technology (Taos, New Mexico, USA)
In: IEEE Proc. on Ion Implantation TEchnology-2002, Piscataway: 2003
DOI: 10.1109/IIT.2002.1257973
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2002
Plasma induced damage monitoring for HDP processes
7th Int. Symp. On Plasma & Process Induced Damage (Maui, Hawaii, USA)
In: Proc. 7th Int. Symp. On Plasma & Process Induced Damage, Santa Clara, USA: 2002
DOI: 10.1109/PPID.2002.1042615
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Influence of photoresist pattern on charging damage during high current ion implantation
7th International Symposium on Plasma- and Process-Induced Damage, P2ID 2002
DOI: 10.1109/PPID.2002.1042620
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