Publikationen

2026

• Schwarz J., Bauer J., Ghazal R., Schrotz AM., Rommel M., Hutzler A.:
  Probing crystal axis orientation of birefringent materials via polarized microspectroscopy and anisotropic optical modeling
  In: JPhys Photonics 8 (2026), S. 015029
  ISSN: 2515-7647
  DOI: 10.1088/2515-7647/ae2e68

2025

• Bauer J.:
  Modellierung mikrospektroskopischer Reflektanz- und Transmittanzmessungen zur Brechungsindex-Bestimmung (Masterarbeit, 2025)
• Bläß U., Wu M., Epelbaum B., Meißner E.:
  Self-organised ordering of scandium into basal monolayers of aluminium nitride and its implication for the growth of well-crystallized (Al,Sc)N materials for electronic devices
  In: Journal of Materials Chemistry C (2025)
  ISSN: 2050-7526
  DOI: 10.1039/d4tc04545a
• Chatterjee A., Wostatek T., Schimmel S.:
  Growth kinetics - a key aspect of every semiconductor synthesis
  13th annual meeting of the young crystal growers (jDGKK) (Frankfurt am Main, 4. März 2025 - 4. März 2025)
• Drexler K., Zhou Y., Wunder B., Lorentz V., März M.:
  Fault Detection and Mitigation of DC/DC Converters with Semiconductor-Based Isolation for DC-EVSEs
  2025 IEEE Seventh International Conference on DC Microgrids (ICDCM) (, 4. Juni 2025 - 6. Juni 2025)
  In: 2025 IEEE Seventh International Conference on DC Microgrids (ICDCM) 2025
  DOI: 10.1109/ICDCM63994.2025.11144678
• Faraji S., Meißner E., Besendörfer S., Miersch C., Weingärtner R., Beyer FC., Friedrich J.:
  Impact of Inhomogeneous Offcut Angles of GaN Native Substrates on Lateral Current Modulation in AlGaN Barrier Layers
  In: Crystal Research and Technology (2025)
  ISSN: 0232-1300
  DOI: 10.1002/crat.202400245
• Fiedler L., Hoffmeister D., Ma TC., Schwarz J., Günther F., Przybilla T., Spiecker E., Thiele S., Dworschak D., Mayrhofer KJ., Hutzler A.:
  Fluoride-Induced Corrosion of Stainless Steel: A Case Study for its Application as Proton Exchange Membrane Water Electrolysis Bipolar Plate Material
  In: Chemsuschem (2025)
  ISSN: 1864-5631
  DOI: 10.1002/cssc.202501561
• Geuß M., Löttert L., Hutzler A., Schwarz J., Nováková J., Khalakhan I., Gaberšček M., Mayrhofer KJ., Thiele S., Cherevko S.:
  Platinum interlayers reduce charge transport barriers between amorphous Ir-oxide OER electrocatalysts and the porous transport layer
  In: Chemical Engineering Journal 514 (2025), Art.Nr.: 162887
  ISSN: 1385-8947
  DOI: 10.1016/j.cej.2025.162887
• Hack M., Korner R., Schwarz D., Daus A., Schulze J., Oehme M.:
  Quantum efficiency scaling by cascaded Ge multi-stage tunnel junctions
  In: Journal of Lightwave Technology 43 (2025), S. 8825-8831
  ISSN: 0733-8724
  DOI: 10.1109/JLT.2025.3589018
• Hack M., Seidel L., Wanitzek M., Oehme M., Daus A., Schulze J., Schwarz D.:
  Determination of the scattering length (Γ → L) by the electrically pumped Germanium Zener Emitter
  In: IEEE Photonics Technology Letters (2025)
  ISSN: 1041-1135
  DOI: 10.1109/LPT.2025.3549829
• Hartmann A., Boettcher N.:
  A Novel Design Variation of a Monolithically Integrated SiC Circuit Breaker
  48th MIPRO ICT and Electronics Convention, MIPRO 2025 (Opatija, 2. Juni 2025 - 6. Juni 2025)
  In: Snjezana Babic, Zeljka Car, Marina Cicin-Sain, Pavle Ergovic, Tihana Galina Grbac, Vera Gradisnik, Stjepan Gros, Alan Jovic, Darko Jurekovic, Tihomir Katulic, Marko Koricic, Vedran Mornar, Juraj Petrovic, Karolj Skala, Dejan Skvorc, Vlado Sruk, Edvard Tijan, Joe S. Valacich, Neven Vrcek, Boris Vrdoljak (Hrsg.): 2025 MIPRO 48th ICT and Electronics Convention, MIPRO 2025 - Proceedings 2025
  DOI: 10.1109/MIPRO65660.2025.11131705
• Kammel R., Dick J., May A., Rommel M., Schulze J.:
  600 °C Operation of a LDMOS Integrated on a 4H-SiC CMOS Platform
  48th MIPRO ICT and Electronics Convention, MIPRO 2025 (Opatija, 2. Juni 2025 - 6. Juni 2025)
  In: Snjezana Babic, Zeljka Car, Marina Cicin-Sain, Pavle Ergovic, Tihana Galina Grbac, Vera Gradisnik, Stjepan Gros, Alan Jovic, Darko Jurekovic, Tihomir Katulic, Marko Koricic, Vedran Mornar, Juraj Petrovic, Karolj Skala, Dejan Skvorc, Vlado Sruk, Edvard Tijan, Joe S. Valacich, Neven Vrcek, Boris Vrdoljak (Hrsg.): 2025 MIPRO 48th ICT and Electronics Convention, MIPRO 2025 - Proceedings 2025
  DOI: 10.1109/MIPRO65660.2025.11131887
• Kinstler A., Neumann R., Taylor AA., Besendörfer S., Meißner E., Weingärtner R., Brunner F., Brusaterra E., Bahat Treidel E., Schulze J.:
  Direct investigation of localized leakage currents in GaN-on-sapphire pn-diodes
  In: Scientific Reports 15 (2025), Art.Nr.: 39578
  ISSN: 2045-2322
  DOI: 10.1038/s41598-025-25338-0
• Medvedev V., Erdmann A., Rosskopf A.:
  Physics-informed deep learning for 3D modeling of light diffraction from optical metasurfaces
  In: Optics Express 33 (2025), S. 1371-1384
  ISSN: 1094-4087
  DOI: 10.1364/OE.544116
• Meindl M., Forster F., Eckardt B., März M.:
  Fuel Cell systems in hybrid-electric aircraft
  European Electrolyser & Fuel Cell Forum (EFCF) (Luzern)
  In: European Electrolyser & Fuel Cell Forum (EFCF) 2025
  DOI: 10.5281/zenodo.17476245
• Schmied N., Kerscher M., Matlok S., Eckardt B., März M.:
  Enhanced Efficiency and Power Density in Next-Gen Power Electronics Through Zero Overvoltage Switching
  2025 Energy Conversion Congress & Expo Europe (ECCE Europe) (Birmingham, 1. September 2025 - 4. September 2025)
  In: 2025 Energy Conversion Congress & Expo Europe (ECCE Europe), New York City: 2025
  DOI: 10.1109/ECCE-Europe62795.2025.11238816
• Schwarz J., Dick J., Beuer S., Rommel M., Hutzler A.:
  Modeling the partially detected backside reflectance of transparent substrates in reflectance microspectroscopy
  In: Micron 198 (2025), S. 103878
  ISSN: 0968-4328
  DOI: 10.1016/j.micron.2025.103878
• Schwarz J., Niebauer M., Römling L., Pham A., Kolesnik-Gray M., Evanschitzky P., Vogel N., Krstic V., Rommel M., Hutzler A.:
  Spectro-Spatial Unmixing in Optical Microspectroscopy for Thickness Determination of Layered Materials
  In: Advanced Optical Materials 13 (2025), Art.Nr.: 2402502
  ISSN: 2195-1071
  DOI: 10.1002/adom.202402502
• Schwemmer B., Dick J., May A., Schulze J.:
  Empirical Modelling of Tunneling Processes in 4H-SiC Gated Pin-Diodes
  48th MIPRO ICT and Electronics Convention, MIPRO 2025 (Opatija, 2. Juni 2025 - 6. Juni 2025)
  In: Snjezana Babic, Zeljka Car, Marina Cicin-Sain, Pavle Ergovic, Tihana Galina Grbac, Vera Gradisnik, Stjepan Gros, Alan Jovic, Darko Jurekovic, Tihomir Katulic, Marko Koricic, Vedran Mornar, Juraj Petrovic, Karolj Skala, Dejan Skvorc, Vlado Sruk, Edvard Tijan, Joe S. Valacich, Neven Vrcek, Boris Vrdoljak (Hrsg.): 2025 MIPRO 48th ICT and Electronics Convention, MIPRO 2025 - Proceedings 2025
  DOI: 10.1109/MIPRO65660.2025.11131817
• Seidenath M., März M.:
  Modeling the Tripping Behavior of Fuses Based on Data Sheet Characteristics and Conductor Material Properties
  In: Electricity 6 (2025), S. 47
  DOI: 10.3390/electricity6030047
• Ultsch S., Dick J., Schwarz J., Schulze J.:
  Electroluminescent Behavior of Defects in 4H-SiC Light Emitting Diodes
  48th MIPRO ICT and Electronics Convention, MIPRO 2025 (Opatija, 2. Juni 2025 - 6. Juni 2025)
  In: Snjezana Babic, Zeljka Car, Marina Cicin-Sain, Pavle Ergovic, Tihana Galina Grbac, Vera Gradisnik, Stjepan Gros, Alan Jovic, Darko Jurekovic, Tihomir Katulic, Marko Koricic, Vedran Mornar, Juraj Petrovic, Karolj Skala, Dejan Skvorc, Vlado Sruk, Edvard Tijan, Joe S. Valacich, Neven Vrcek, Boris Vrdoljak (Hrsg.): 2025 MIPRO 48th ICT and Electronics Convention 2025
  DOI: 10.1109/MIPRO65660.2025.11132079
• Wimmer J., Dick J., Schulze J.:
  Fabrication and Electrical Characterization of Pure Boron on 4H-SiC Junctions
  48th MIPRO ICT and Electronics Convention, MIPRO 2025 (Opatija, 2. Juni 2025 - 6. Juni 2025)
  In: Snjezana Babic, Zeljka Car, Marina Cicin-Sain, Pavle Ergovic, Tihana Galina Grbac, Vera Gradisnik, Stjepan Gros, Alan Jovic, Darko Jurekovic, Tihomir Katulic, Marko Koricic, Vedran Mornar, Juraj Petrovic, Karolj Skala, Dejan Skvorc, Vlado Sruk, Edvard Tijan, Joe S. Valacich, Neven Vrcek, Boris Vrdoljak (Hrsg.): 2025 MIPRO 48th ICT and Electronics Convention 2025
  DOI: 10.1109/MIPRO65660.2025.11132043
• Wostatek T., Civas EN., Zheng J., Chirala VYMR., Schimmel S.:
  Emerging research directions in the field of nitride semiconductors
  13th annual meeting of the young crystal growers (jDGKK) (Frankfurt am Main, 4. März 2025)
• Wostatek T., Zenk M., Friedrich J., Schimmel S.:
  Numerical and experimental analysis of ammonothermal crystal growth configurations and their impact on the temperature field along the autoclave wall
  International Conference on Nitride Semiconductors - ICNS-15 (Malmö, 6. Juli 2025 - 11. Juli 2025)
  In: MIKON (Hrsg.): ABSTRACT BOOKLET ICNS 15 2025
  Open Access: https://files.mkon.nu/fmfiles/file/Abstractbook_ICNS15_020725_updated-1.pdf

2024

• Awad A., Behroozi C., Erdmann A.:
  Integrated Mask Process Modeling for Better Yield Predictions
  Photomask Technology 2024 (Monterey, CA, 30. September 2024 - 3. Oktober 2024)
  In: Seong-Sue Kim, Lawrence S. Melvin (Hrsg.): Proceedings of SPIE - The International Society for Optical Engineering 2024
  DOI: 10.1117/12.3035191
• Guiot E., Allibert F., Leib J., Becker T., Drouin A., Schwarzenbach W.:
  SiC engineered substrate: increasing SiC MOSFETs current density from device to module level
  39th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2024
  DOI: 10.1109/APEC48139.2024.10509052
• Chirala VYMR., Schimmel S.:
  Fundamentals of ammonothermal growth of nitride crystals
  12th Annual jDGKK Meeting (Erlangen, 5. März 2024 - 5. März 2025)
• Cornigli D., Schlichting H., Becker T., Larcher L., Erlbacher T., Pešić M.:
  Modelling-Augmented Failure Diagnostics in Planar SiC MOS Devices Using TDDB Measurements
  In: Solid State Phenomena 361 (2024), S. 93-98
  ISSN: 1012-0394
  DOI: 10.4028/p-jbV5Vq
• Ghazal R.:
  Analyse und Modellierung mikrospektrometrischer Messungen an Dünnschichtsystemen unter Einsatz von Polarisationsoptiken (Masterarbeit, 2024)
• Hack M., Kugler B., Wanitzek M., Vijayan P., Schulze J., Oehme M.:
  In situ, non-invasive novel measurement method for the determination of integrated waveguide losses
  Metamaterials, Metadevices, and Metasystems 2024 (San Diego, CA, 18. August 2024 - 22. August 2024)
  In: Nader Engheta, Mikhail A. Noginov, Nikolay I. Zheludev, Nikolay I. Zheludev (Hrsg.): Proceedings of SPIE - The International Society for Optical Engineering 2024
  DOI: 10.1117/12.3028025
• Hack M., Seidel L., Wanitzek M., Oehme M., Schulze J., Schwarz D.:
  Utilizing direct Zener tunneling in Germanium for cryogenic quantum applications
  In: Materials Science in Semiconductor Processing 172 (2024), Art.Nr.: 108057
  ISSN: 1369-8001
  DOI: 10.1016/j.mssp.2023.108057
• Hoffmeister D., Finger S., Fiedler L., Ma TC., Körner A., Zlatar M., Fritsch B., Bodnar KW., Carl S., Götz A., Zubiri BA., Will J., Spiecker E., Cherevko S., Freiberg A., Mayrhofer K., Thiele S., Hutzler A., van Pham C.:
  Photodeposition-Based Synthesis of TiO2@IrOx Core–Shell Catalyst for Proton Exchange Membrane Water Electrolysis with Low Iridium Loading
  In: Advanced Science (2024)
  ISSN: 2198-3844
  DOI: 10.1002/advs.202402991
• Joch D., Lang T., Sanctis S., Jank M.:
  Simulation-Guided Analysis towards Trench Depth Optimization for Enhanced Flexibility in Stretch-Free, Shape-Induced Interconnects for Flexible Electronics
  In: Materials 17 (2024), Art.Nr.: 3849
  ISSN: 1996-1944
  DOI: 10.3390/ma17153849
• Joch D., Lehninger D., Sunil A., Sanctis S., Lang T., Zeltner J., Wartenberg P., Seidel K., Jank M.:
  Precise Compensation of Device Variability in IGZO-based Ferroelectric ThinFilm Transistors for Enhanced Transparent Display Performance
  International Symposium, Seminar, and Exhibition, Display Week 2024 (San Jose, CA, USA, 12. Mai 2024 - 17. Mai 2024)
  In: Digest of Technical Papers - SID International Symposium 2024
  DOI: 10.1002/sdtp.17463
• Ley M., Dick J., Schulze J.:
  Ab Initio Calculations to Determine Tunneling Parameters for 4H-SiC Tunneling Field-Effect Transistor Simulations
  47th ICT and Electronics Convention, MIPRO 2024 (Opatija, HRV, 20. Mai 2024 - 24. Mai 2024)
  In: Snjezana Babic, Zeljka Car, Marina Cicin-Sain, Dragan Cisic, Pavle Ergovic, Tihana Galinac Grbac, Vera Gradisnik, Stjepan Gros, Andrej Jokic, Alan Jovic, Darko Jurekovic, Tihomir Katulic, Marko Koricic, Vedran Mornar, Juraj Petrovic, Karolj Skala, Dejan Skvorc, Vlado Sruk, Marko Svaco, Edvard Tijan, Neven Vrcek, Boris Vrdoljak (Hrsg.): 2024 47th ICT and Electronics Convention, MIPRO 2024 - Proceedings 2024
  DOI: 10.1109/MIPRO60963.2024.10569785
• May A., Rommel M., Baier L., Schraml M., Dick J., Jank M., Schulze J.:
  A 4H-SiC CMOS Technology enabling Smart Sensor Integration and Circuit Operation above 500 °C
  2024 Smart Systems Integration Conference and Exhibition, SSI 2024 (Hamburg, 16. April 2024 - 18. April 2024)
  In: 2024 Smart Systems Integration Conference and Exhibition, SSI 2024 2024
  DOI: 10.1109/SSI63222.2024.10740550
• Okeil H., Erlbacher T., Wachutka G.:
  Very High Temperature Hall Sensors in a Wafer-Scale 4H-SiC Technology
  In: Advanced Materials Technologies (2024)
  ISSN: 2365-709X
  DOI: 10.1002/admt.202400046
• Popp L., Kampe P., Fritsch B., Hutzler A., Poller MJ., Albert J., Schühle P.:
  Supported Ruthenium Phosphide as a Promising Catalyst for Selective Hydrogenation of Sugars
  In: European Journal of Inorganic Chemistry (2024)
  ISSN: 1434-1948
  DOI: 10.1002/ejic.202400117
• Rusch O., Brueckner K., Erlbacher T.:
  Increasing 4H-SiC Trench Depth by Improving the Dry Etch Selectivity towards the Oxide Hard Mask
  DOI: 10.4028/p-1PoMgV
• Scheller D., Hrunski F., Schwarberg J., Knolle W., Soykal ÖO., Udvarhelyi P., Narang P., Weber HB., Hollendonner M., Nagy R.:
  Quantum enhanced electric field mapping within semiconductor devices
  In: Physical Review Applied (2024)
  ISSN: 2331-7019
  DOI: 10.1103/pv13-vgcw
• Schimmel S., Tomida D., Ishiguro T., Honda Y., Chichibu SF., Amano H.:
  Transition from etch-back to growth conditions during ammonothermal growth of GaN – a transient numerical model for convective flow and temperature distribution in a retrograde solubility configuration
  GaN Marathon (Verona, 9. Juni 2024 - 12. Juni 2024)
• Schraml M., Rommel M., Papathanasiou N., Erlbacher T.:
  Device Modeling of 4H-SiC PIN Photodiodes with Shallow Implanted Al Emitters for VUV Sensor Applications
  In: Key Engineering Materials 984 (2024), S. 55-62
  ISSN: 1013-9826
  DOI: 10.4028/p-T0xLa9
• Schwarberg J., Karhu R., Kallinger B., Rommel M., Schmidt R., Schulze J.:
  Investigation of CMOS Single Process Steps on 4H-SiC a-Plane Wafers for Quantum Applications
  47th ICT and Electronics Convention, MIPRO 2024 (Opatija, 20. Mai 2024 - 24. Mai 2024)
  In: Snjezana Babic, Zeljka Car, Marina Cicin-Sain, Dragan Cisic, Pavle Ergovic, Tihana Galinac Grbac, Vera Gradisnik, Stjepan Gros, Andrej Jokic, Alan Jovic, Darko Jurekovic, Tihomir Katulic, Marko Koricic, Vedran Mornar, Juraj Petrovic, Karolj Skala, Dejan Skvorc, Vlado Sruk, Marko Svaco, Edvard Tijan, Neven Vrcek, Boris Vrdoljak (Hrsg.): 2024 47th ICT and Electronics Convention, MIPRO 2024 - Proceedings 2024
  DOI: 10.1109/MIPRO60963.2024.10569589
• Seidel L., Liu T., Concepcion O., Spirito D., Benkhelifa A., Kiyek V., Schulze J., Marzban B., Capellini G., Witzens J., Grützmacher D., Buca D., Oehme M.:
  Pulse tunable SiGeSn/GeSn multi-quantum-well microdisk lasers
  Metamaterials, Metadevices, and Metasystems 2024 (San Diego, CA, USA, 18. August 2024 - 22. August 2024)
  In: Nader Engheta, Mikhail A. Noginov, Nikolay I. Zheludev, Nikolay I. Zheludev (Hrsg.): Proceedings of SPIE - The International Society for Optical Engineering 2024
  DOI: 10.1117/12.3028016
• Seidel L., Liu T., Concepción O., Marzban B., Kiyek V., Spirito D., Schwarz D., Benkhelifa A., Schulze J., Ikonic Z., Hartmann JM., Chelnokov A., Witzens J., Capellini G., Oehme M., Grützmacher D., Buca D.:
  Continuous-wave electrically pumped multi-quantum-well laser based on group-IV semiconductors
  In: Nature Communications 15 (2024), Art.Nr.: 10502
  ISSN: 2041-1723
  DOI: 10.1038/s41467-024-54873-z
• Stolzke T., Schwarz J., März M.:
  Simplifying Random Particle Structures within Soft Magnetic Composite Materials for the Optimization of 3D-FEM Simulations
  In: IEEE Transactions on Magnetics (2024), S. 1-1
  ISSN: 0018-9464
  DOI: 10.1109/TMAG.2024.3434611
• Sun J., Fritsch B., Körner A., Taherkhani M., Park C., Wang M., Hutzler A., Woehl TJ.:
  Discovery of Molecular Intermediates and Nonclassical Nanoparticle Formation Mechanisms by Liquid Phase Electron Microscopy and Reaction Throughput Analysis
  In: Small Structures (2024)
  ISSN: 2688-4062
  DOI: 10.1002/sstr.202400146
• Wanitzek M., Hack M., Ramachandra H., Seidel L., Schwarz D., Schulze J., Oehme M.:
  Reduction of dark current in Ge-on-Si avalanche photodiodes using a double mesa structure
  Metamaterials, Metadevices, and Metasystems 2024 (San Diego, CA, 18. August 2024 - 22. August 2024)
  In: Nader Engheta, Mikhail A. Noginov, Nikolay I. Zheludev, Nikolay I. Zheludev (Hrsg.): Proceedings of SPIE - The International Society for Optical Engineering 2024
  DOI: 10.1117/12.3028061
• Wanitzek M., Hack M., Schwarz D., Schulze J., Oehme M.:
  Low-temperature performance of GeSn-on-Si avalanche photodiodes toward single-photon detection
  In: Materials Science in Semiconductor Processing 176 (2024), Art.Nr.: 108303
  ISSN: 1369-8001
  DOI: 10.1016/j.mssp.2024.108303
• Wanitzek M., Schulze J., Oehme M.:
  Ge-on-Si single-photon avalanche diode using a double mesa structure
  In: Optics Letters 49 (2024), S. 6345-6348
  ISSN: 0146-9592
  DOI: 10.1364/OL.534436
• Wanitzek M., Schwarz D., Schulze J., Oehme M.:
  Bandwidth enhancement in GeSn-on-Si avalanche photodiodes with a 60 GHz gain-bandwidth-product
  2024 IEEE Silicon Photonics Conference, SiPhotonics 2024 (Tokyo, JPN, 15. April 2024 - 18. April 2024)
  In: IEEE International Conference on Group IV Photonics GFP 2024
  DOI: 10.1109/SiPhotonics60897.2024.10543351
• Wostatek T., Chirala VYMR., Stoddard N., Civas EN., Pimputkar S., Schimmel S.:
  Ammonothermal Crystal Growth of Functional Nitrides for Semiconductor Devices: Status and Potential
  In: Materials (2024)
  ISSN: 1996-1944
  DOI: 10.3390/ma17133104
• Wostatek T., Schimmel S.:
  Nitride semiconductor crystal growth at FAU Erlangen-Nürnberg
  12th annual meeting of the young crystal growers (Erlangen, 5. März 2024 - 5. März 2024)
• Zhao D., Letz S., Jank M., März M.:
  Adhesion strength of ductile thin film determined by cross-sectional nanoindentation
  In: International Journal of Mechanical Sciences 270 (2024), Art.Nr.: 109103
  ISSN: 0020-7403
  DOI: 10.1016/j.ijmecsci.2024.109103

2023

• Baierhofer D., Thomas B., Staiger F., Marchetti B., Förster C., Erlbacher T.:
  Correlation of Extended Defects with Electrical Yield of SiC MOSFET Devices
  In: Defect and Diffusion Forum 426 (2023), S. 11-16
  ISSN: 1012-0386
  DOI: 10.4028/p-i82158
• Guiot E., Allibert F., Leib J., Becker T., Erlbacher T.:
  Improved Power Cycling Reliability through the use of SmartSiC ™ Engineered Substrate for Power Devices
  2023 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2023
  DOI: 10.30420/566091210
• Guiot E., Allibert F., Leib J., Becker T., Schwarzenbach W., Hellinger C., Erlbacher T., Rouchier S.:
  Proven Power Cycling Reliability of Ohmic Annealing Free SiC Power Device Through the Use of SmartSiC™ Substrate
  Trans Tech Publications Ltd, 2023
  DOI: 10.4028/p-777hqg
• Schlichting H., Lim M., Becker T., Kallinger B., Erlbacher T.:
  The Influence of Extended Defects in 4H-SiC Epitaxial Layers on Gate Oxide Performance and Reliability
  Trans Tech Publications Ltd, 2023
  DOI: 10.4028/p-4i3rhf
• Berkmann F., Steuer O., Ganss F., Prucnal S., Schwarz D., Fischer IA., Schulze J.:
  Sharp MIR plasmonic modes in gratings made of heavily doped pulsed laser-melted Ge1-xSnx
  In: Optical Materials Express 13 (2023), S. 752-763
  ISSN: 2159-3930
  DOI: 10.1364/OME.479637
• Couasnon T., Fritsch B., Jank M., Blukis R., Hutzler A., Benning LG.:
  Goethite Mineral Dissolution to Probe the Chemistry of Radiolytic Water in Liquid-Phase Transmission Electron Microscopy
  In: Advanced Science 10 (2023), Art.Nr.: 2301904
  ISSN: 2198-3844
  DOI: 10.1002/advs.202301904
• Fritsch B., Körner A., Couasnon T., Blukis R., Taherkhani M., Benning LG., Jank M., Spiecker E., Hutzler A.:
  Tailoring the Acidity of Liquid Media with Ionizing Radiation: Rethinking the Acid-Base Correlation beyond pH
  In: Journal of Physical Chemistry Letters (2023), S. 4644-4651
  ISSN: 1948-7185
  DOI: 10.1021/acs.jpclett.3c00593
• Geiling J., Wagner L., Auer F., Ortner F., Nuß A., Seyfried R., Stammberger F., Steinberger M., Bösmann A., Öchsner R., Wasserscheid P., Graichen K., März M., Preuster P.:
  Operational experience with a liquid organic hydrogen carrier (LOHC) system for bidirectional storage of electrical energy over 725 h
  In: Journal of Energy Storage 72 (2023), Art.Nr.: 108478
  ISSN: 2352-152X
  DOI: 10.1016/j.est.2023.108478
• Hutzler A., Fritsch B., Matthus CD., Jank M., Rommel M.:
  Author Correction: Highly accurate determination of heterogeneously stacked Van-der-Waals materials by optical microspectroscopy (Scientific Reports, (2020), 10, 1, (13676), 10.1038/s41598-020-70580-3)
  In: Scientific Reports 13 (2023), Art.Nr.: 1410
  ISSN: 2045-2322
  DOI: 10.1038/s41598-023-28605-0
• Kolesnik-Gray M., Meingast L., Siebert M., Unbehaun T., Huf T., Ellrott G., Abellan Saez G., Wild S., Lloret Segura VJ., Mundloch U., Schwarz J., Niebauer M., Szabo M., Rommel M., Hutzler A., Hauke F., Hirsch A., Krstic V.:
  Unconventional conductivity increase in multilayer black phosphorus
  In: npj 2D Materials and Applications 7 (2023), Art.Nr.: 21
  ISSN: 2397-7132
  DOI: 10.1038/s41699-023-00384-2
• Marhenke J., Dirnecker T., Vogel N., Rommel M.:
  Stiffness influence on particle separation in polydimethylsiloxane-based deterministic lateral displacement devices
  In: Microfluidics and Nanofluidics 27 (2023), Art.Nr.: 76
  ISSN: 1613-4982
  DOI: 10.1007/s10404-023-02685-w
• Pham A.:
  Systemübergreifende modulare Charakterisierung von Dünnschichtsystemen mittels Reflexionsmessungen (Masterarbeit, 2023)
• Schimmel S.:
  Junior Research Group on Nitride Semiconductors
  Seminar of the Young Crystal Growers (DGKK) (, 14. März 2023)
• Schimmel S., Tomida D., Ishiguro T., Honda Y., Chichibu SF., Amano H.:
  Temperature Field, Flow Field, and Temporal Fluctuations Thereof in Ammonothermal Growth of Bulk GaN—Transition from Dissolution Stage to Growth Stage Conditions
  In: Materials 16 (2023), S. 2016
  ISSN: 1996-1944
  DOI: 10.3390/ma16052016
• Schlichting H., Lim M., Becker T., Kallinger B., Erlbacher T.:
  The Influence of Extended Defects in 4H-SiC Epitaxial Layers on Gate Oxide Performance and Reliability
  In: Materials Science Forum 1090 (2023), S. 127-133
  ISSN: 0255-5476
  DOI: 10.4028/p-4i3rhf
• Schmidt R.:
  Einzelprozessentwicklung für die Herstellung von Halbleiterbauelementen auf 4H-SiC a-Plane Substraten (Masterarbeit, 2023)
• Schraml M., Papathanasiou N., May A., Rommel M., Erlbacher T.:
  4H-SiC PIN Photodiode for VUV Detection Using an Enhanced Emitter Doping Design
  2023 IEEE Photonics Conference, IPC 2023 (Orlando, FL, USA, 12. November 2023 - 16. November 2023)
  In: 2023 IEEE Photonics Conference, IPC 2023 - Proceedings 2023
  DOI: 10.1109/IPC57732.2023.10360797
• Schraml M., Papathanasiou N., May A., Weiss T., Erlbacher T.:
  Towards SiC-Based VUV Pin-Photodiodes - Investigations on 4H-SiC Photodiodes with Shallow Implanted Al Emitters
  DOI: 10.4028/p-959z1t
• Schwarz J., Niebauer M., Kolesnik-Gray M., Szabo M., Baier L., Chava P., Erbe A., Krstic V., Rommel M., Hutzler A.:
  Correlating Optical Microspectroscopy with 4×4 Transfer Matrix Modeling for Characterizing Birefringent Van der Waals Materials
  In: Small Methods (2023)
  ISSN: 2366-9608
  DOI: 10.1002/smtd.202300618
• Seidel L., Liu T., Marzban B., Kiyek V., Schulze J., Capellini G., Witzens J., Buca D., Oehme M.:
  SiGeSn/GeSn Multi Quantum Wells Light Emitting Diodes with a Negative Differential Resistance
  2023 IEEE Silicon Photonics Conference, SiPhotonics 2023 (Washington, DC, 4. April 2023 - 7. April 2023)
  In: IEEE International Conference on Group IV Photonics GFP 2023
  DOI: 10.1109/SiPhotonics55903.2023.10141960
• Singh M., Abdelsamie M., Li Q., Kodalle T., Lee DK., Arnold S., Ceratti DR., Slack JL., Schwartz CP., Brabec C., Tao S., Sutter-Fella CM.:
  Effect of the Precursor Chemistry on the Crystallization of Triple Cation Mixed Halide Perovskites
  In: Chemistry of Materials (2023)
  ISSN: 0897-4756
  DOI: 10.1021/acs.chemmater.3c00799
• Sk MR., Thunder S., Lehninger D., Sanctis S., Raffel Y., Lederer M., Jank MPM., Kaempfe T., De S., Chakrabarti B.:
  Ferroelectric Content-Addressable Memory Cells with IGZO Channel: Impact of Retention Degradation on the Multibit Operation
  In: ACS Applied Electronic Materials 5 (2023), S. 812-820
  ISSN: 2637-6113
  DOI: 10.1021/acsaelm.2c01357
• Völkl A., Toutouly J., Drobek D., Apeleo Zubiri B., Spiecker E., Klupp Taylor R.:
  Gram-Scale Continuous Flow Synthesis of Silver-on-Silica Patchy Nanoparticles with Widely Tunable Resonances for Plasmonics Applications
  In: ACS Applied Nano Materials 6 (2023), S. 10126-10137
  ISSN: 2574-0970
  DOI: 10.1021/acsanm.3c00869
• Kim S., Byun D.W., Shin H.K., Koo S.M., Erlbacher T., Lim M., Csato C., Förthner J., Rusch O., Ehrensberger K., Kupfer B., Beuer S., Oertel S.:
  A Modeling of 4H-SiC Super-Junction MOSFETs with Filtered High Energy Implantation
  Trans Tech Publications Ltd, 2023
  DOI: 10.4028/p-hyy2l9
• Weißhaupt D., Funk HS., Oehme M., Bloos D., Berkmann F., Seidel L., Fischer IA., Schulze J.:
  High mobility Ge 2DHG based MODFETs for low-temperature applications
  In: Semiconductor Science and Technology 38 (2023), Art.Nr.: 035007
  ISSN: 0268-1242
  DOI: 10.1088/1361-6641/acb22f

2022

• Baierhofer D., Thomas B., Staiger F., Marchetti B., Foerster C., Erlbacher T.:
  Defect reduction in SiC epilayers by different substrate cleaning methods
  In: Materials Science in Semiconductor Processing 140 (2022)
  ISSN: 1369-8001
  DOI: 10.1016/j.mssp.2021.106414
• Erlbacher T., Rouchier S., Guiot E., Picun G., Allibert F., Leib J., Becker T., Schwarzenbach W., Drouin A., Béthoux J.M., Widiez J.:
  Proven Power Cycling Reliability of SmartSiC™ Substrate for Power Devices
  International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2022
  DOI: 10.30420/565822081
• Berkmann F., Augel L., Hack M., Kawaguchi Y., Weisshaupt D., Fischer IA., Schulze J.:
  Optimization of Fully Integrated Al Nanohole Array-Based Refractive Index Sensors for Use With a LED Light Source
  In: IEEE Photonics Journal 14 (2022)
  ISSN: 1943-0655
  DOI: 10.1109/JPHOT.2022.3177354
• Boettcher N., Takamori T., Wada K., Saito W., Nishizawa SI., Erlbacher T.:
  Short Circuit Performance and Current Limiting Mode of a Monolithically Integrated SiC Circuit Breaker for DC Applications up to 800 v
  24th European Conference on Power Electronics and Applications, EPE 2022 ECCE Europe (Hannover, 5. September 2022 - 9. September 2022)
  In: 24th European Conference on Power Electronics and Applications, EPE 2022 ECCE Europe 2022
• Daneri S., Kerschbaum A., Runa E.:
  One-dimensionality of the minimizers for a diffuse interface generalized antiferromagnetic model in general dimension
  In: Journal of Functional Analysis 283 (2022), Art.Nr.: 109715
  ISSN: 0022-1236
  DOI: 10.1016/j.jfa.2022.109715
• Dreher V., Joch D., Kren H., Schwarberg J., Jank M.:
  Ultrathin and flexible sensors for pressure and temperature monitoring inside battery cells
  2022 IEEE Sensors Conference, SENSORS 2022 (Dallas, TX, 30. Oktober 2022 - 2. November 2022)
  In: Proceedings of IEEE Sensors 2022
  DOI: 10.1109/SENSORS52175.2022.9967234
• Friedrich RP., Kappes M., Cicha I., Tietze R., Braun C., Schneider-Stock R., Nagy R., Alexiou C., Janko C.:
  Optical Microscopy Systems for the Detection of Unlabeled Nanoparticles
  In: International Journal of Nanomedicine Volume 17 (2022), S. 2139-2163
  ISSN: 1176-9114
  DOI: 10.2147/IJN.S355007
• Fritsch B., Wu M., Hutzler A., Zhou D., Spruit R., Vogl L., Will J., Pérez Garza H., März M., Jank M., Spiecker E.:
  Sub-Kelvin thermometry for evaluating the local temperature stability within in situ TEM gas cells
  In: Ultramicroscopy 235 (2022), S. 113494
  ISSN: 0304-3991
  DOI: 10.1016/j.ultramic.2022.113494
• Fritsch B., Zech T., Bruns M., Körner A., Khadivianazar S., Wu M., Zargar Talebi N., Virtanen S., Unruh T., Jank M., Spiecker E., Hutzler A.:
  Radiolysis‐Driven Evolution of Gold Nanostructures – Model Verification by Scale Bridging In Situ Liquid‐Phase Transmission Electron Microscopy and X‐Ray Diffraction
  In: Advanced Science 9 (2022), Art.Nr.: 2202803
  ISSN: 2198-3844
  DOI: 10.1002/advs.202202803
  URL: https://onlinelibrary.wiley.com/doi/10.1002/advs.202202803
• Jena S.:
  Optimierung von Lithographieprozessen auf Germaniumoberflächen zur Herstellung von Nanodrähten (Bachelorarbeit, 2022)
• Marhenke J., Dirnecker T., Vogel N., Rommel M.:
  Increasing flow rates in polydimethylsiloxane-based deterministic lateral displacement devices for sub-micrometer particle separation
  In: Microfluidics and Nanofluidics 27 (2022), Art.Nr.: 2
  ISSN: 1613-4982
  DOI: 10.1007/s10404-022-02609-0
• Marzban B., Seidel L., Kiyek V., Liu T., Zöllner M., Ikonic Z., Capellini G., Buca D., Schulze J., Oehme M., Witzens J.:
  Modeling and design of an electrically pumped SiGeSn microring laser
  Silicon Photonics XVII 2022 (Online, 20. Februar 2022 - 24. Februar 2022)
  In: Graham T. Reed, Andrew P. Knights (Hrsg.): Proceedings of SPIE - The International Society for Optical Engineering 2022
  DOI: 10.1117/12.2609537
• Marzban B., Seidel L., Liu T., Kiyek V., Wu K., Zollner MH., Ikonik Z., Schulze J., Grutzmacher D., Capellini G., Oehme M., Witzens J., Buca D.:
  Electrically pumped SiGeSn microring lasers
  2022 IEEE Photonics Society Summer Topicals Meeting Series, SUM 2022 (Cabo San Lucas, MEX, 11. Juli 2022 - 13. Juli 2022)
  In: 2022 IEEE Photonics Society Summer Topicals Meeting Series, SUM 2022 - Proceedings 2022
  DOI: 10.1109/SUM53465.2022.9858260
• May A., Rommel M., Beuer S., Erlbacher T.:
  Via Size-Dependent Properties of TiAl Ohmic Contacts on 4H-SiC
  In: Materials Science Forum 1062 (2022), S. 185-189
  ISSN: 0255-5476
  DOI: 10.4028/p-36s1w4
• Muthumbi AK.:
  Defect detection in nano-imprint stamps with deep learning and low resolution microscope (Masterarbeit, 2022)
• Schimmel S., Salamon M., Tomida D., Ishiguro T., Honda Y., Chichibu SF., Amano H.:
  High Energy Computed Tomography as a Tool for Validation of Numerical Simulations of Ammonothermal Crystal Growth of GaN
  8th International Workshop on Crystal Growth Technology (Berlin, 29. Mai 2022 - 2. Juni 2022)
• Schimmel S., Salamon M., Tomida D., Kobelt I., Heinlein L., Kimmel AC., Steigerwald T., Ishiguro T., Honda Y., Chichibu SF., Amano H., Schlücker E., Wellmann P.:
  In Situ Monitoring Technologies as Prospective Validation Tools for Numerical Simulations of Ammonothermal Crystal Growth
  7th European Conference on Crystal Growth (Paris, 25. Juli 2022 - 27. Juli 2022)
• Schimmel S., Salamon M., Tomida D., Neumeier S., Ishiguro T., Honda Y., Chichibu SF., Amano H.:
  High-Energy Computed Tomography as a Prospective Tool for In Situ Monitoring of Mass Transfer Processes inside High-Pressure Reactors-A Case Study on Ammonothermal Bulk Crystal Growth of Nitrides including GaN
  In: Materials 15 (2022), S. 6165
  ISSN: 1996-1944
  DOI: 10.3390/ma15176165
• Schimmel S., Sun W., Dropka N.:
  Artificial Intelligence for Crystal Growth and Characterization
  In: Crystals 12 (2022), S. 1232
  ISSN: 2073-4352
  DOI: 10.3390/cryst12091232
• Schimmel S., Tomida D., Ishiguro T., Honda Y., Chichibu SF., Amano H.:
  Temperature field and fluid flow in ammonothermal growth of GaN during etch-back and crystal growth for a retrograde solubility configuration
  International Workshop on Nitride Semiconductors (Berlin, 9. Oktober 2022 - 14. Oktober 2022)
• Sedova V.:
  Modeling of thick photoresist for grayscale lithography application (Masterarbeit, 2022)
• Seidel L., Schafer S., Oehme M., Buca D., Capellini G., Schulze J., Schwarz D.:
  Electroluminescence of SixGe1-x-ySny / Ge1-ySny pin-Diodes Grown on a GeSn Buffer
  48th IEEE European Solid State Circuits Conference, ESSCIRC 2022 (Milan, ITA, 19. September 2022 - 22. September 2022)
  In: ESSCIRC 2022 - IEEE 48th European Solid State Circuits Conference, Proceedings 2022
  DOI: 10.1109/ESSCIRC55480.2022.9911458
• Szabo M.:
  Optimierung und Charakterisierung von 2D-Materialien für die Passivierung von schwarzem Phosphor (Masterarbeit, 2022)
• Wanitzek M., Oehme M., Spieth C., Schwarz D., Seidel L., Schulze J.:
  GeSn-on-Si Avalanche Photodiodes for Short-Wave Infrared Detection
  48th IEEE European Solid State Circuits Conference, ESSCIRC 2022 (Milan, ITA, 19. September 2022 - 22. September 2022)
  In: ESSCIRC 2022 - IEEE 48th European Solid State Circuits Conference, Proceedings 2022
  DOI: 10.1109/ESSCIRC55480.2022.9911363

2021

• Awad A., Brendel P., Evanschitzky P., Woldeamanual DS., Rosskopf A., Erdmann A.:
  Accurate prediction of EUV lithographic images and 3D mask effects using generative networks
  In: Journal of Micro-Nanolithography MEMS and MOEMS 20 (2021)
  ISSN: 1932-5150
  DOI: 10.1117/1.JMM.20.4.043201
• Becker T.:
  Reliability of Silicon-Nitride based High-Voltage Monolithic Capacitors
  (2021)
  DOI: 10.24406/publica-fhg-410867
  (anderer)
• Fritsch B., Hutzler A., Wu M., Khadivianazar S., Vogl L., Jank M., März M., Spiecker E.:
  Accessing local electron-beam induced temperature changes during in situ liquid-phase transmission electron microscopy
  In: Nanoscale Advances 3 (2021), S. 2466 - 2474
  ISSN: 2516-0230
  DOI: 10.1039/D0NA01027H
  URL: https://pubs.rsc.org/en/content/articlelanding/2021/NA/D0NA01027H
• Fritsch B., Hutzler A., Wu M., Vogl L., Jank M., März M., Spiecker E.:
  Beam-induced heating at low electron fluxes during liquid phase transmission electron microscopy
  In: Microscopy and Microanalysis 27 (2021), S. 1040-1042
  ISSN: 1431-9276
  DOI: 10.1017/S1431927621003937
• Fritsch B., Hutzler A., Wu M., Vogl L., Jank MPM., März M., Spiecker E.:
  Evaluating local temperature changes during liquid cell transmission electron microscopy by in situ parallel beam electron diffraction
  Virtual Early Career European Microscopy Congress 2020 (Kopenhagen, 24. November 2020 - 26. November 2020)
  In: Proceedings of the European Microscopy Congress 2020 2021
  DOI: 10.22443/rms.emc2020.253
  URL: https://www.emc2020.eu/abstract/evaluating-local-temperature-changes-during-liquid-cell-transmission-electron-microscopy-by-emin-situnbspemparallel-beam-electron-diffraction.html
• Geiling J., Steinberger M., Ortner F., Seyfried R., Nuss A., Uhrig F., Lange C., Oschsner R., Wasserscheid P., März M., Preuster P.:
  Combined dynamic operation of PEM fuel cell and continuous dehydrogenation of perhydro-dibenzyltoluene
  In: International Journal of Hydrogen Energy 46 (2021), S. 35662-35677
  ISSN: 0360-3199
  DOI: 10.1016/j.ijhydene.2021.08.034
• Gerwig M., Ali AS., Neubert D., Polster S., Bohme U., Franze G., Rosenkranz M., Popov A., Ponomarev I., Jank M., Viehweger C., Brendler E., Frey L., Kroll P., Kroke E.:
  From Cyclopentasilane to Thin-Film Transistors
  In: Advanced Electronic Materials 7 (2021), S. 1-13
  ISSN: 2199-160X
  DOI: 10.1002/aelm.202000422
• Hirsch A., Schulze M., Sturm F., Trempa M., Reimann C., Friedrich J.:
  Factors influencing the gas bubble evolution and the cristobalite formation in quartz glass Cz crucibles for Czochralski growth of silicon crystals
  In: Journal of Crystal Growth 570 (2021)
  ISSN: 0022-0248
  DOI: 10.1016/j.jcrysgro.2021.126231
• Hutzler A., Fritsch B., Branscheid R., Wu M., Jank M., Spiecker E.:
  Direct Manipulation of Nanostructures Utilizing Donut-Shaped Potential Wells during Liquid-Phase Transmission Electron Microscopy
  Virtual Early Career European Microscopy Congress 2020
  DOI: 10.22443/rms.emc2020.158
• Johnsson A., Schmidt G., Hauf M., Pichler P.:
  A Review of Platinum Diffusion in Silicon and Its Application for Lifetime Engineering in Power Devices
  In: physica status solidi (a) (2021)
  ISSN: 1862-6300
  DOI: 10.1002/pssa.202100462
• Lehninger D., Ellinger M., Ali T., Li S., Mertens K., Lederer M., Olivio R., Kämpfe T., Hanisch N., Biedermann K., Rudolph M., Brackmann V., Sanctis S., Jank M., Seidel K.:
  A Fully Integrated Ferroelectric Thin-Film-Transistor – Influence of Device Scaling on Threshold Voltage Compensation in Displays
  In: Advanced Electronic Materials (2021)
  ISSN: 2199-160X
  DOI: 10.1002/aelm.202100082
• Meißner E., Besendörfer S., Faraji S., Bahat-Treidel E., Würfl J.:
  The long journey from crystal growth to power devices, the role of materials development for III-Nitride semiconductors
  2021 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2021 (Virtual, Online, 3. Mai 2021 - 7. Mai 2021)
  In: PCIM Europe Conference Proceedings 2021
• Meißner E., Jockel D., Koch M., Niewa R.:
  A New Perspective on Growth of GaN from the Basic Ammonothermal Regime
  In: Elke Meissner, Rainer Niewa (Hrsg.): Ammonothermal Synthesis and Crystal Growth of Nitrides, Cham: Springer Science and Business Media Deutschland GmbH, 2021, S. 77-103 (Springer Series in Materials Science, Bd.304)
  ISBN: 978-3-030-56305-9
  DOI: 10.1007/978-3-030-56305-9_6
• Nagy R., Dasari DBR., Babin C., Liu D., Vorobyov V., Niethammer M., Widmann M., Linkewitz T., Gediz I., Stoehr R., Weber HB., Ohshima T., Ghezellou M., Son NT., Ul-Hassan J., Kaiser F., Wrachtrup J.:
  Narrow inhomogeneous distribution of spin-active emitters in silicon carbide
  In: Applied Physics Letters 118 (2021), S. 144003
  ISSN: 0003-6951
  DOI: 10.1063/5.0046563
• Rafaja D., Fischer P., Barchuk M., Motylenko M., Roeder C., Besendoerfer S., Meißner E.:
  X-Ray diffraction analysis and modeling of the depth profile of lattice strains in AlGaN stacks
  In: Thin Solid Films 732 (2021), Art.Nr.: 138777
  ISSN: 0040-6090
  DOI: 10.1016/j.tsf.2021.138777
• Rühl M., Lehmeyer J., Nagy R., Weißer M., Bockstedte M., Krieger M., Weber HB.:
  Removing the orientational degeneracy of the TS defect in 4H-SiC by electric fields and strain
  In: New Journal of Physics 23 (2021), Art.Nr.: 073002
  ISSN: 1367-2630
  DOI: 10.1088/1367-2630/abfb3e
  URL: https://iopscience.iop.org/article/10.1088/1367-2630/abfb3e
• Schimmel S., Tomida D., Ishiguro T., Honda Y., Chichibu SF., Amano H.:
  Numerical simulation of ammonothermal crystal growth of GaN-current state, challenges, and prospects
  In: Crystals 11 (2021), Art.Nr.: 356
  ISSN: 2073-4352
  DOI: 10.3390/cryst11040356
• Schimmel S., Tomida D., Saito M., Bao Q., Ishiguro T., Honda Y., Chichibu SF., Amano H.:
  Boundary conditions for simulations of fluid flow and temperature field during ammonothermal crystal growth—a machine-learning assisted study of autoclave wall temperature distribution
  In: Crystals 11 (2021), S. 1-27
  ISSN: 2073-4352
  DOI: 10.3390/cryst11030254
• Schimmel S., Tomida D., Saito M., Bao Q., Ishiguro T., Honda Y., Chichibu SF., Amano H., Wellmann P.:
  Numerical Simulations of Ammonothermal Crystal Growth of GaN and Pathways towards their Experimental Validation
  Seminar of the Young Crystal Growers (DGKK) (Berlin, 5. Oktober 2022 - 6. Oktober 2021)
• Schlichting H.:
  Impact of Extended Defects on the Yield and Performance of 4H-SiC Power Devices
  5th Sino MOS-AK Workshop (Xi'an, 11. August 2021 - 13. August 2021)
  DOI: 10.5281/zenodo.5642677
• Schmidt K., Polzinger B., Metry M., Koppe S., Zimmermann A.:
  Hybrid Additive Manufacturing by Embedded Electrical Circuits Using 3-D Dispensing
  In: IEEE Transactions on Components, Packaging and Manufacturing Technology 11 (2021), S. 510-521
  ISSN: 2156-3950
  DOI: 10.1109/TCPMT.2021.3054835
• Schnick W., Cordes N., Mallmann M., Niewa R., Meißner E.:
  Ammonothermal Materials
  In: Elke Meissner, Rainer Niewa (Hrsg.): Ammonothermal Synthesis and Crystal Growth of Nitrides, Cham: Springer Science and Business Media Deutschland GmbH, 2021, S. 329-336 (Springer Series in Materials Science, Bd.304)
  DOI: 10.1007/978-3-030-56305-9_18
• Taherkhani M., Fritsch B., Jank M., Spiecker E., Hutzler A.:
  Modelling the Radiolysis of Silver Nitrate Solutions in presence of Bromide Ions in Liquid-Phase Transmission Electron Microscopy
  In: Microscopy and Microanalysis 27 (2021), S. 103-104
  ISSN: 1431-9276
  DOI: 10.1017/S1431927621013519
• Toumi S., Ouennoughi Z., Weiß R.:
  Temperature analysis of the Gaussian distribution modeling the barrier height inhomogeneity in the Tungsten/4H-SiC Schottky diode
  In: Applied Physics A: Materials Science and Processing 127 (2021), Art.Nr.: 661
  ISSN: 0947-8396
  DOI: 10.1007/s00339-021-04787-0
• Yu Z., Xu T., Letz S., Bayer CF., Schletz A., März M.:
  Automated quantitative analysis of void morphology evolution in Ag[sbnd]Ag direct bonding interface after accelerated aging
  In: Microelectronics Reliability 126 (2021), Art.Nr.: 114285
  ISSN: 0026-2714
  DOI: 10.1016/j.microrel.2021.114285
• Yu Z., Yu Z., Tan YZ., Bayer CF., Rauh H., Schletz A., März M., Birlem O.:
  Cu-Cu Thermocompression Bonding with Cu-Nanowire Films for Power Semiconductor Die-Attach on DBC Substrates
  23rd IEEE Electronics Packaging Technology Conference, EPTC 2021 (Virtual, Online, SGP, 1. Dezember 2021 - 30. Dezember 2021)
  In: 2021 IEEE 23rd Electronics Packaging Technology Conference, EPTC 2021 2021
  DOI: 10.1109/EPTC53413.2021.9663890

2020

• Albrecht M., Klüpfel F., Erlbacher T.:
  An Iterative Surface Potential Algorithm Including Interface Traps for Compact Modeling of SiC-MOSFETs
  In: IEEE Transactions on Electron Devices 67 (2020), S. 855-862
  ISSN: 0018-9383
  DOI: 10.1109/TED.2020.2967507
• Albrecht M., Pérez D., Martens R., Bauer AJ., Erlbacher T.:
  Impact of channel implantation on a 4h-sic cmos operational amplifier for high temperature applications
  18th International Conference on Silicon Carbide and Related Materials, ICSCRM 2019 (Kyoto, 29. September 2019 - 4. Oktober 2019)
  In: Hiroshi Yano, Takeshi Ohshima, Kazuma Eto, Takeshi Mitani, Shinsuke Harada, Yasunori Tanaka (Hrsg.): Materials Science Forum 2020
  DOI: 10.4028/www.scientific.net/MSF.1004.1123
• Bejenari I., Burenkov A., Pichler P., Deretzis I., La Magna A.:
  Molecular dynamics modeling of the radial heat transfer from silicon nanowires
  2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020 (, 3. September 2020 - 6. Oktober 2020)
  In: International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020
  DOI: 10.23919/SISPAD49475.2020.9241646
• Besendörfer S., Meißner E., Medjdoub F., Derluyn J., Friedrich J., Erlbacher T.:
  The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors
  In: Scientific Reports 10 (2020), Art.Nr.: 17252
  ISSN: 2045-2322
  DOI: 10.1038/s41598-020-73977-2
• Besendörfer S., Meißner E., Tajalli A., Meneghini M., Freitas JA., Derluyn J., Medjdoub F., Meneghesso G., Friedrich J., Erlbacher T.:
  Vertical breakdown of GaN on Si due to V-pits
  In: Journal of Applied Physics 127 (2020), Art.Nr.: 015701
  ISSN: 0021-8979
  DOI: 10.1063/1.5129248
• Besendörfer S., Meißner E., Zweipfennig T., Yacoub H., Fahle D., Behmenburg H., Kalisch H., Vescan A., Friedrich J., Erlbacher T.:
  Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures
  In: AIP Advances 10 (2020), Art.Nr.: 045028
  ISSN: 2158-3226
  DOI: 10.1063/1.5141905
• Boettcher N., Erlbacher T.:
  Design Considerations on a Monolithically Integrated, Self Controlled and Regenerative 900 V SiC Circuit Breaker
  2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020 (Suita, 23. September 2020 - 25. September 2020)
  In: 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020 2020
  DOI: 10.1109/WiPDAAsia49671.2020.9360279
• Di Benedetto L., Licciardo GD., Erlbacher T., Bauer AJ., Rubino A.:
  A 4H-SiC UV Phototransistor with Excellent Optical Gain Based on Controlled Potential Barrier
  In: IEEE Transactions on Electron Devices 67 (2020), S. 154-159
  ISSN: 0018-9383
  DOI: 10.1109/TED.2019.2950986
• Faraji S., Meißner E., Weingärtner R., Besendörfer S., Friedrich J.:
  In-situ preparation of gan sacrificial layers on sapphire substrate in movpe reactor for self-separation of the overgrown gan crystal
  In: Crystals 10 (2020), S. 1-11
  ISSN: 2073-4352
  DOI: 10.3390/cryst10121100
• Hellinger C., Rusch O., Rommel M., Bauer AJ., Erlbacher T.:
  Low-resistance ohmic contact formation by laser annealing of N-implanted 4H-SiC
  In: Hiroshi Yano, Takeshi Ohshima, Kazuma Eto, Takeshi Mitani, Shinsuke Harada, Yasunori Tanaka (Hrsg.): Materials Science Forum 2020
  DOI: 10.4028/www.scientific.net/MSF.1004.718
• Hessler S., Knopf S., Rommel M., Girschikofsky M., Schmauß B., Hellmann R.:
  Advancing the sensitivity of integrated epoxy-based Bragg grating refractometry by high-index nanolayers
  In: Optics Letters 45 (2020), S. 5510-5513
  ISSN: 0146-9592
  DOI: 10.1364/OL.402768
• Hutzler A., Fritsch B., Matthus C., Jank MPM., Rommel M.:
  Highly Accurate Determination of Heterogeneously Stacked Van-der-Waals Materials by Optical Microspectroscopy
  In: Scientific Reports 10 (2020), Art.Nr.: 13676
  ISSN: 2045-2322
  DOI: 10.1038/s41598-020-70580-3
  URL: https://www.nature.com/articles/s41598-020-70580-3
• Kazantsev D., Ryssel H.:
  ASNOM mapping of SiC epilayer doping profile and of surface phonon polariton waveguiding
  In: Journal of Applied Physics 127 (2020)
  ISSN: 0021-8979
  DOI: 10.1063/1.5128104
• Kocher M., Schlichting H., Kallinger B., Rommel M., Bauer AJ., Erlbacher T.:
  Influence of shallow pits and device design of 4H-SiC VDMOS transistors on in-line defect analysis by photoluminescence and differential interference contrast mapping
  18th International Conference on Silicon Carbide and Related Materials, ICSCRM 2019 (Kyoto, 29. September 2019 - 4. Oktober 2019)
  In: Hiroshi Yano, Takeshi Ohshima, Kazuma Eto, Takeshi Mitani, Shinsuke Harada, Yasunori Tanaka (Hrsg.): Materials Science Forum 2020
  DOI: 10.4028/www.scientific.net/MSF.1004.299
• Morioka N., Babin C., Nagy R., Gediz I., Hesselmeier E., Liu D., Joliffe M., Niethammer M., Dasari D., Vorobyov V., Kolesov R., Stoehr R., Ul-Hassan J., Nguyen Tien Son ., Ohshima T., Udvarhelyi P., Thiering G., Gali A., Wrachtrup J., Kaiser F.:
  Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide
  In: Nature Communications 11 (2020), Art.Nr.: 2516
  ISSN: 2041-1723
  DOI: 10.1038/s41467-020-16330-5
• Rickert L., Fritsch B., Kors A., Reithmaier JP., Benyoucef M.:
  Mode properties of telecom wavelength InP-based high-(Q/V) L4/3 photonic crystal cavities
  In: Nanotechnology 31 (2020), Art.Nr.: 315703
  ISSN: 1361-6528
  DOI: 10.1088/1361-6528/ab8a8c
  URL: https://iopscience.iop.org/article/10.1088/1361-6528/ab8a8c
• Rusch O., Hellinger C., Moult J., Corcoran Y., Erlbacher T.:
  Reducing on-resistance for SiC diodes by thin wafer and laser anneal technology
  18th International Conference on Silicon Carbide and Related Materials, ICSCRM 2019 (Kyoto, 29. September 2019 - 4. Oktober 2019)
  In: Hiroshi Yano, Takeshi Ohshima, Kazuma Eto, Takeshi Mitani, Shinsuke Harada, Yasunori Tanaka (Hrsg.): Materials Science Forum 2020
  DOI: 10.4028/www.scientific.net/MSF.1004.155
• Toumi S., Ouennoughi Z., Murakami K.:
  Effect of temperature on the Fowler-Nordheim barrier height, flat band potentials and electron/hole effective masses in the MOS capacitors
  In: Physica B-Condensed Matter 585 (2020), Art.Nr.: 412125
  ISSN: 0921-4526
  DOI: 10.1016/j.physb.2020.412125
• Wankerl H., Stern M., Altieri-Weimar P., Al-Baddai S., Lang KJ., Roider F., Lang EW.:
  Fully convolutional networks for void segmentation in X-ray images of solder joints
  In: Journal of Manufacturing Processes 57 (2020), S. 762-767
  ISSN: 1526-6125
  DOI: 10.1016/j.jmapro.2020.07.021
• Weiße J., Matthus C., Schlichting H., Mitlehner H., Erlbacher T.:
  RESURF n-LDMOS Transistor for Advanced Integrated Circuits in 4H-SiC
  In: IEEE Transactions on Electron Devices 67 (2020), S. 3278-3284
  ISSN: 0018-9383
  DOI: 10.1109/TED.2020.3002730
• Wicht T., Mueller S., Weingaertner R., Epelbaum B., Besendoerfer S., Bläß U., Weißer M., Unruh T., Meißner E.:
  X-ray characterization of physical-vapor-transport-grown bulk AlN single crystals
  In: Journal of Applied Crystallography 53 (2020), S. 1080-1086
  ISSN: 0021-8898
  DOI: 10.1107/S1600576720008961
• Yu Z., Zeng W., Zhao D., Zhang Z., Bayer CF., Schletz A., März M.:
  Reliability of silver direct bonding in thermal cycling tests
  8th IEEE Electronics System-Integration Technology Conference, ESTC 2020 (Tonsberg, Vestfold, 15. September 2020 - 18. September 2020)
  In: Proceedings - 2020 IEEE 8th Electronics System-Integration Technology Conference, ESTC 2020 2020
  DOI: 10.1109/ESTC48849.2020.9229753
• Zhao D., Letz S., Schletz A., März M.:
  A Method for the Characterization of Adhesion Strength Degradation of Thin Films on Si-Substrate under thermal cycling test
  2020 CIPS (Berlin, 24. März 2020 - 26. März 2020)
• Zhao D., Letz S., Yu Z., Schletz A., März M.:
  Combined experimental and numerical approach for investigating the mechanical degradation of the interface between thin film metallization and Si-substrate after temperature cycling test
  In: Microelectronics Reliability (2020)
  ISSN: 0026-2714
  DOI: 10.1016/j.microrel.2020.113785
• Zhao Y., Miao P., Elia J., Hu H., Wang X., Heumüller T., Hou Y., Matt G., Osvet A., Chen YT., Tarragó M., de Ligny D., Przybilla T., Denninger P., Will J., Zhang J., Tang X., Li N., He C., Pan A., Meixner AJ., Spiecker E., Zhang D., Brabec C.:
  Strain-activated light-induced halide segregation in mixed-halide perovskite solids
  In: Nature Communications 11 (2020), Art.Nr.: 6328
  ISSN: 2041-1723
  DOI: 10.1038/s41467-020-20066-7
• Zimmermann V., Zörner A., Chen W., Yu Z., Jank M., Bayer C., Schletz A., März M.:
  Integration of printed electronics with potted power electronic modules
  11th International Conference on Integrated Power Electronics Systems, CIPS 2020 (Berlin, 24. März 2020 - 26. März 2020)
  In: CIPS 2020 - 11th International Conference on Integrated Power Electronics Systems 2020

2019

• Albrecht M., Erlbacher T., Bauer A., Frey L.:
  Improving 5V digital 4H-SIC CMOS ics for operating at 400°C using PMOS channel implantation
  In: Materials Science Forum (2019), S. 827-831
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.963.827
• Beljakowa S., Pichler P., Kalkofen B., Hübner R.:
  Diffusion of Phosphorus and Boron from Atomic Layer Deposition Oxides into Silicon
  In: physica status solidi (a) 216 (2019), Art.Nr.: 1900306
  ISSN: 1862-6300
  DOI: 10.1002/pssa.201900306
• Boettcher N., Heckel T., Erlbacher T., Pelaic K.:
  Silicon RC-Snubber for 900 V Applications Utilising non-Stoichiometric Silicon Nitride
  31st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) (Shanghai, 19. Mai 2019 - 23. Mai 2019)
  In: 31st International Symposium on Power Semiconductor Devices & ICs, NEW YORK: 2019
  DOI: 10.1109/ISPSD.2019.8757589
• Chen YC., Salter PS., Niethammer M., Widmann M., Kaiser F., Nagy R., Morioka N., Babin C., Erlekampf J., Berwian P., Booth MJ., Wrachtrup J.:
  Laser Writing of Scalable Single Color Centers in Silicon Carbide
  In: Nano Letters 19 (2019), S. 2377-2383
  ISSN: 1530-6984
  DOI: 10.1021/acs.nanolett.8b05070
• Di Benedetto L., Matthus C., Erlbacher T., Bauer AJ., Licciardo GD., Rubino A., Frey L.:
  Performance of 4H-SIC bipolar diodes as temperature sensor at low temperatures
  12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018 (Birmingham, 2. September 2018 - 6. September 2018)
  In: Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (Hrsg.): Materials Science Forum 2019
  DOI: 10.4028/www.scientific.net/MSF.963.572
• Erdmann A., Evanschitzky P., Mesilhy HMS., Philipsen V., Hendrickx E., Bauer M.:
  Attenuated phase shift mask for extreme ultraviolet: Can they mitigate three-dimensional mask effects?
  In: Journal of Micro-Nanolithography MEMS and MOEMS 18 (2019), Art.Nr.: 011005
  ISSN: 1932-5150
  DOI: 10.1117/1.JMM.18.1.011005
• Erlekampf J., Kallinger B., Weiße J., Rommel M., Berwian P., Friedrich J., Erlbacher T.:
  Deeper insight into lifetime-engineering in 4H-SiC by ion implantation
  In: Journal of Applied Physics 126 (2019), Art.Nr.: 045701
  ISSN: 0021-8979
  DOI: 10.1063/1.5092429
• Fedorova N., Macher P., Jovicic V., Zbogar-Rasic A., Delgado A.:
  Experimental investigation of the gravity influence on the condensation behaviour on Al and PTFE-samples
  27. GALA-Fachtagung "Experimentelle Strömungsmechanik" (Erlangen, 3. September 2019 - 5. September 2019)
  In: A. Delgado, B. Gatternig, M. Münsch, B. Ruck, A. Leder (Hrsg.): Proceedings der 27. GALA-Fachtagung "Experimentelle Strömungsmechanik" 2019
• Grünler S., Rattmann G., Erlbacher T., Bauer AJ., Krach F., Frey L.:
  Towards highly integrated, automotive power SoCs using capacitors operating at 100 V implemented in TSV
  9th International Conference on Integrated Power Electronics Systems, CIPS 2016 (Nuremberg, DEU, 8. März 2016 - 10. März 2016)
  In: CIPS 2016 - 9th International Conference on Integrated Power Electronics Systems 2019
• Hutzler A., Fritsch B., Jank M., Branscheid R., Martens C., Spiecker E., März M.:
  Nanoparticles: In Situ Liquid Cell TEM Studies on Etching and Growth Mechanisms of Gold Nanoparticles at a Solid–Liquid–Gas Interface
  In: Advanced Materials Interfaces 6 (2019), S. 1970126
  ISSN: 2196-7350
  DOI: 10.1002/admi.201970126
• Hutzler A., Fritsch B., Jank M., Branscheid R., Martens R., Spiecker E., März M.:
  In Situ Liquid Cell TEM Studies on Etching and Growth Mechanisms of Gold Nanoparticles at a Solid-Liquid-Gas Interface
  In: Advanced Materials Interfaces 6 (2019), Art.Nr.: 1901027
  ISSN: 2196-7350
  DOI: 10.1002/admi.201901027
  URL: https://www.onlinelibrary.wiley.com/doi/10.1002/admi.201901027
• Hutzler A., Fritsch B., Jank MPM., Branscheid R., Spiecker E., März M.:
  Preparation of Graphene-Supported Microwell Liquid Cells for In Situ Transmission Electron Microscopy
  In: Journal of Visualized Experiments (2019), Art.Nr.: e59751
  ISSN: 1940-087X
  DOI: 10.3791/59751
  URL: https://www.jove.com/video/59751/preparation-graphene-supported-microwell-liquid-cells-for-situ?status=a61757k
• Hutzler A., Matthus C., Dolle C., Rommel M., Jank M., Spiecker E., Frey L.:
  Large-Area Layer Counting of Two-Dimensional Materials Evaluating the Wavelength Shift in Visible-Reflectance Spectroscopy
  In: Journal of Physical Chemistry C 123 (2019), S. 9192 - 9201
  ISSN: 1932-7447
  DOI: 10.1021/acs.jpcc.9b00957
  URL: https://pubs.acs.org/doi/10.1021/acs.jpcc.9b00957
• Kocher M., Yao B., Weiße J., Rommel M., Xu ZW., Erlbacher T., Bauer A.:
  Determination of compensation ratios of al-implanted 4H-SIC by tcad modelling of TLM measurements
  12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018 (Birmingham, 2. September 2018 - 6. September 2018)
  In: Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (Hrsg.): Materials Science Forum 2019
  DOI: 10.4028/www.scientific.net/MSF.963.445
• Matlok S., Boettcher N., Jahn M., Hörauf P., Erlbacher T., Eckardt B.:
  Retrofitting Wide Band Gap Devices to classic Power Modules using Silicon RC Snubbers
  2019 PCIM Europe (Nürnberg, 7. Mai 2019 - 9. Mai 2019)
  URL: https://www.researchgate.net/publication/331642497_Retrofitting_Wide_Band_Gap_Devices_to_classic_Power_Modules_using_Silicon_RC_Snubbers
• Matthus CD., Bauer AJ., Frey L., Erlbacher T.:
  Wavelength-selective 4H-SiC UV-sensor array
  In: Materials Science in Semiconductor Processing 90 (2019), S. 205-211
  ISSN: 1369-8001
  DOI: 10.1016/j.mssp.2018.10.019
• Matthus CD., Di Benedetto L., Kocher M., Bauer AJ., Licciardo GD., Rubino A., Erlbacher T.:
  Feasibility of 4H-SiC p-i-n Diode for Sensitive Temperature Measurements Between 20.5 K and 802 K
  In: IEEE Sensors Journal 19 (2019), S. 2871-2878
  ISSN: 1530-437X
  DOI: 10.1109/JSEN.2019.2891293
• Pichler P., Sledziewski T., Häublein V., Bauer AJ., Erlbacher T.:
  Channeling in 4H-SiC from an application point of view
  12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018 (Birmingham, 2. September 2018 - 6. September 2018)
  In: Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (Hrsg.): Materials Science Forum 2019
  DOI: 10.4028/www.scientific.net/MSF.963.386
• Rattmann G., Pichler P., Erlbacher T.:
  On a Novel Source Technology for Deep Aluminum Diffusion for Silicon Power Electronics
  In: physica status solidi (a) 216 (2019), Art.Nr.: 1900167
  ISSN: 1862-6300
  DOI: 10.1002/pssa.201900167
• Rusch O., Moult J., Erlbacher T.:
  Influence of trench design on the electrical properties of 650v 4H-SIC JBS diodes
  12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018 (Birmingham, 2. September 2018 - 6. September 2018)
  In: Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (Hrsg.): Materials Science Forum 2019
  DOI: 10.4028/www.scientific.net/MSF.963.549
• Schlichting H., Sledziewski T., Bauer A., Erlbacher T.:
  Design Considerations for Robust Manufacturing and High Yield of 1.2 kV 4H-SiC VDMOS Transistors
  In: Materials Science Forum 963 (2019), S. 763-767
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.963.763
• Schlichting H., Sledziewski T., Bauer AJ., Erlbacher T.:
  Design considerations for robust manufacturing and high yield of 1.2 kv 4H-SIC VDMOS transistors
  12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018 (Birmingham, 2. September 2018 - 6. September 2018)
  In: Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (Hrsg.): Materials Science Forum 2019
  DOI: 10.4028/www.scientific.net/MSF.963.763
• Schriefer T., Hofmann M.:
  A hybrid frequency-time-domain approach to determine the vibration fatigue life of electronic devices
  In: Microelectronics Reliability 98 (2019), S. 86-94
  ISSN: 0026-2714
  DOI: 10.1016/j.microrel.2019.04.001
• Schriefer T., Hofmann M., Rauh H., Eckardt B., März M.:
  Parameter study on the electrical contact resistance of axially canted coil springs for high-current systems
  2018 29th International Conference on Electrical Contacts together with 64th IEEE Holm Conference on Electrical Contacts (Albuquerque, NM, 14. Oktober 2018 - 18. Oktober 2018)
  DOI: 10.1109/HOLM.2018.8611640
• Stolzke T., Dirnecker T., Schwarz J., Frey L.:
  Investigation of magnetic properties from a manganese-zinc-ferrite polymer bonded material
  In: International Journal of Applied Electromagnetics and Mechanics 59 (2019), S. 97-104
  ISSN: 1383-5416
  DOI: 10.3233/JAE-171244
• Stolzke T., Ehrlich S., Joffe C., März M.:
  Comprehensive accuracy examination of electrical power loss measurements of inductive components for frequencies up to 1 MHz
  In: Journal of Magnetism and Magnetic Materials 497 (2019), Art.Nr.: 166022
  ISSN: 0304-8853
  DOI: 10.1016/j.jmmm.2019.166022
• Udvarhelyi P., Nagy R., Kaiser F., Lee SY., Wrachtrup J., Gali A.:
  Spectrally Stable Defect Qubits with no Inversion Symmetry for Robust Spin-To-Photon Interface
  In: Physical Review Applied 11 (2019), Art.Nr.: 044022
  ISSN: 2331-7019
  DOI: 10.1103/PhysRevApplied.11.044022
• Weiße J., Hauck M., Krieger M., Bauer A., Erlbacher T.:
  Aluminum acceptor activation and charge compensation in implanted p-type 4H-SiC
  In: AIP Advances 9 (2019), S. 055308
  ISSN: 2158-3226
  DOI: 10.1063/1.5096440
• Weiße J., Hauck M., Krieger M., Bauer AJ., Erlbacher T.:
  Publisher's Note: Aluminum acceptor activation and charge compensation in implanted p-type 4H-SiC (AIP Advances (2019) 9 (055308) DOI: 10.1063/1.5096440)
  In: AIP Advances 9 (2019), Art.Nr.: 079901
  ISSN: 2158-3226
  DOI: 10.1063/1.5118666
• Weiße J., Hauck M., Sledziewski T., Krieger M., Bauer A., Mitlehner H., Frey L., Erlbacher T.:
  On the origin of charge compensation in aluminum-implanted n-type 4H-SiC by analysis of hall effect measurements
  12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018 (Birmingham, 2. September 2018 - 6. September 2018)
  In: Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (Hrsg.): Materials Science Forum 2019
  DOI: 10.4028/www.scientific.net/MSF.963.433
• Weiße J., Mitlehner H., Frey L., Erlbacher T.:
  Design of a 4H-SIC resurf N-LDMOS transistor for high voltage integrated circuits
  12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018 (Birmingham, 2. September 2018 - 6. September 2018)
  In: Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (Hrsg.): Materials Science Forum 2019
  DOI: 10.4028/www.scientific.net/MSF.963.629
• Śledziewski T., Erlbacher T., Bauer A., Frey L., Chen X., Zhao Y., Li C., Dai X.:
  Comparison between NI-SALICIDE and self-aligned lift-off used in fabrication of ohmic contacts for sic power MOSFET
  12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018 (Birmingham, 2. September 2018 - 6. September 2018)
  In: Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (Hrsg.): Materials Science Forum 2019
  DOI: 10.4028/www.scientific.net/MSF.963.490

2018

• Bilbao-Guillerna A., Thiruvallur Eachambadi R., Cadot GBJ., Axinte DA., Billingham J., Stumpf F., Stumpf F., Beuer S., Rommel M.:
  Novel Approach Based on Continuous Trench Modelling to Predict Focused Ion Beam Prepared Freeform Surfaces
  In: Journal of Materials Processing Technology (2018)
  ISSN: 0924-0136
  DOI: 10.1016/j.jmatprotec.2017.10.024
• Distler F., Oppelt D., Schür J., Vossiek M.:
  Design and characterization of a compact and robust shielded dielectric waveguide for mmW applications
  In: Proceedings of the GeMiC 2018 - The 11th German Microwave Conference (GeMiC 2018) 2018
  DOI: 10.23919/gemic.2018.8335108
• Erlbacher T., Huerner A., Zhu Y., Bach L., Schletz A., Zuerbig V., Pinti L., Kirste L., Giese C., Nebel CE., Bauer AJ., Frey L.:
  Electrical properties of schottky-diodes based on B doped diamond
  International Conference on Silicon Carbide and Related Materials, ICSCRM 2017
  DOI: 10.4028/www.scientific.net/MSF.924.931
• Erlekampf J., Kaminzky D., Rosshirt K., Kallinger B., Rommel M., Berwian P., Friedrich J., Frey L.:
  Influence and mutual interaction of process parameters on the Z1/2defect concentration during epitaxy of 4H-SiC
  International Conference on Silicon Carbide and Related Materials, ICSCRM 2017
  DOI: 10.4028/www.scientific.net/MSF.924.112
• Förthner M., Girschikofsky M., Rumler M., Stumpf F., Rommel M., Hellmann R., Frey L.:
  One-step nanoimprinted Bragg grating sensor based on hybrid polymers
  In: Sensors and Actuators A-Physical 283 (2018), S. 298-304
  ISSN: 0924-4247
  DOI: 10.1016/j.sna.2018.09.053
• Girschikofsky MG., Rosenberger M., Förthner M., Rommel M., Frey L., Hellmann R.:
  Flexible thin film bending sensor based on Bragg gratings in hybrid polymers
  Optical Sensing and Detection V 2018
  DOI: 10.1117/12.2303820
• Huerner A., Heckel T., Endruschat A., Erlbacher T., Bauer AJ., Frey L.:
  Analytical model for the influence of the gate-voltage on the forward conduction properties of the body-diode in SiC-MOSFETs
  International Conference on Silicon Carbide and Related Materials, ICSCRM 2017
  DOI: 10.4028/www.scientific.net/MSF.924.901
• Hutzler A.:
  Development of advanced liquid cell architectures for high performance in situ transmission electron microscopy in materials sciences (Dissertation, 2018)
  URL: https://opus4.kobv.de/opus4-fau/frontdoor/index/index/docId/10092
• Hutzler A., Matthus C., Rommel M., Jank M., Frey L.:
  Large-Area Layer Counting of 2D Materials via Visible Reflection Spectroscopy
  19th International Microscopy Congress (IMC19) (Sydney, 9. September 2018 - 14. September 2018)
  URL: https://abstracts.imc19.com/pdf/abstract_497.pdf
• Hutzler A., Schmutzler T., Jank M., Branscheid R., Unruh T., Spiecker E., Frey L.:
  Unravelling the Mechanisms of Gold−Silver Core−Shell Nanostructure Formation by in Situ TEM Using an Advanced Liquid Cell Design
  In: Nano Letters 18 (2018), S. 7222 - 7229
  ISSN: 1530-6984
  DOI: 10.1021/acs.nanolett.8b03388
  URL: https://pubs.acs.org/doi/10.1021/acs.nanolett.8b03388
• Kalkofen B., Ahmed B., Beljakowa S., Lisker M., Kim YS., Burte EP.:
  Atomic layer deposition of phosphorus oxide films as solid sources for doping of semiconductor structures
  18th IEEE International Conference on Nanotechnology (IEEE-NANO) (Cork, 23. Juli 2018 - 26. Juli 2018)
  In: 2018 IEEE 18TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO), NEW YORK: 2018
  DOI: 10.1109/nano.2018.8626235
• Lomakin K., Pavlenko T., Ankenbrand M., Sippel M., Ringel J., Scheetz M., Klemm T., Gräf D., Helmreich K., Franke J., Gold G.:
  Evaluation and Characterization of 3D Printed Pyramid Horn Antennas utilizing different Deposition Techniques for Conductive Material
  In: IEEE Transactions on Components, Packaging and Manufacturing Technology (2018), S. 1-1
  ISSN: 2156-3950
  DOI: 10.1109/tcpmt.2018.2871931
• Matthus C., Hürner A., Erlbacher T., Bauer AJ., Frey L.:
  Evidence of low injection efficiency for implanted p-emitters in bipolar 4H-SiC high-voltage diodes
  In: Solid-State Electronics (2018), S. 101-105
  ISSN: 0038-1101
  DOI: 10.1016/j.sse.2018.03.010
• Nagy R., Widmann M., Niethammer M., Dasari DBR., Gerhardt I., Soykal OO., Radulaski M., Ohshima T., Vuckovic J., Nguyen Tien Son ., Ivanov IG., Economou SE., Bonato C., Lee SY., Wrachtrup J.:
  Quantum Properties of Dichroic Silicon Vacancies in Silicon Carbide
  In: Physical Review Applied 9 (2018), Art.Nr.: 034022
  ISSN: 2331-7019
  DOI: 10.1103/PhysRevApplied.9.034022
• Nouibat TH., Messai Z., Chikouch D., Ouennoughi Z., Rouag N., Rommel M., Frey L.:
  Normalized differential conductance to study current conduction mechanisms in MOS structures
  In: Microelectronics Reliability 91 (2018), S. 183-187
  ISSN: 0026-2714
  DOI: 10.1016/j.microrel.2018.10.001
• Rosenberger M., Girschikofsky M., Förthner M., Belle S., Rommel M., Frey L., Schmauß B., Hellmann R.:
  TiO2 surface functionalization of COC based planar waveguide Bragg gratings for refractive index sensing
  In: Journal of Optics 20 (2018), Art.Nr.: 01LT02
  ISSN: 2040-8978
  DOI: 10.1088/2040-8986/aa9bcf
• Scharin-Mehlmann M., Häring A., Rommel M., Dirnecker T., Friedrich O., Frey L., Gilbert D.:
  Nano- and micro-patterned S-, H-, and X-PDMS for cell-based applications: Comparison of wettability, roughness, and cell-derived parameters
  In: Frontiers in Bioengineering and Biotechnology 6 (2018), Art.Nr.: 51
  ISSN: 2296-4185
  DOI: 10.3389/fbioe.2018.00051
• Schneidereit D., Tschernich J., Friedrich O., Scharin-Mehlmann M., Gilbert D.:
  3D-Printed Reusable Cell Culture Chamber with Integrated Electrodes for Electrical Stimulation and Parallel Microscopic Evaluation
  In: 3D Printing and Additive Manufacturing 5 (2018), S. 115-125
  ISSN: 2329-7662
  DOI: 10.1089/3dp.2017.0103
• Schriefer T., Hofmann M.:
  Assessing the vibrational response and robustness of electronic systems by dissolving time and length scale
  19th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) (Toulouse, 15. April 2018 - 18. April 2018)
  DOI: 10.1109/EuroSimE.2018.8369868
  URL: https://ieeexplore.ieee.org/document/8369868
• Schriefer T., Hofmann M., März M.:
  Vibrational resistance investigation of an IGBT gate driver utilizing Frequency Response Analysis (FRA) and Highly Accelerated Life Test (HALT)
  2018 10th International Conference on Integrated Power Electronics Systems (CIPS) (Stuttgart, 20. März 2018 - 22. März 2018)
  URL: https://ieeexplore.ieee.org/document/8403138
• Schrüfer D., Ellinger M., Jank M., Frey L., Weigel R., Hagelauer AM.:
  Circuits with Scaled Metal Oxide Technology for Future TOLAE RF Systems
  European Microwave Conference (Madrid, 23. September 2018 - 28. September 2018)
  In: Proceedings of the 48th European Microwave Conference 2018
• Steinberger M., Geiling J., Oechsner R., Frey L.:
  Anode recirculation and purge strategies for PEM fuel cell operation with diluted hydrogen feed gas
  In: Applied Energy 232 (2018), S. 572-582
  ISSN: 0306-2619
  DOI: 10.1016/j.apenergy.2018.10.004
• Stolzke T., Dirnecker T., Schwarz J., Frey L.:
  Investigation of magnetic properties from a manganese–zinc–ferrite polymer bonded material
  In: International Journal of Applied Electromagnetics and Mechanics Pre-press (2018), S. 1-8
  ISSN: 1383-5416
  DOI: 10.3233/JAE-171244
• Unterreitmeier M., Nagler O., Pfitzner L., Weigel R., Holmer R.:
  An acoustic emmission sensor system for thin layer crack detection
  29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (Aalborg, 1. Oktober 2018 - 5. Oktober 2018)
  DOI: 10.1016/j.microrel.2018.07.015
• Weiße J., Hauck M., Sledziewski T., Tschiesche M., Krieger M., Bauer A., Mitlehner H., Frey L., Erlbacher T.:
  Analysis of Compensation Effects in Aluminum-Implanted 4H-SiC Devices
  In: Materials Science Forum 924 (2018), S. 184-187
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.924.184
• Yu Z., Zeltner S., Boettcher N., Rattmann G., Leib J., Bayer C., Schletz A., Erlbacher T., Frey L.:
  Heterogeneous Integration of Vertical GaN Power Transistor on Si Capacitor for DC-DC Converters
  7th Electronic System-Integration Technology Conference, ESTC 2018
  DOI: 10.1109/ESTC.2018.8546362
• Zörner A., Oertel S., Jank M., Frey L., Langenstein B., Bertsch T.:
  Human Sweat Analysis Using a Portable Device Based on a Screen-printed Electrolyte Sensor
  In: Electroanalysis 30 (2018), S. 665-671
  ISSN: 1040-0397
  DOI: 10.1002/elan.201700672

2017

• Albrecht M., Hürner A., Erlbacher T., Bauer A., Frey L.:
  Experimental verification of a self-triggered solid-state circuit breaker based on a SiC BIFET
  In: Materials Science Forum 897 (2017), S. 665-668
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.897.665
• Banzhaf S., Kenntner J., Grieb M., Schwaiger S., Erlbacher T., Bauer AJ., Frey L.:
  Stress reduction in high voltage MIS capacitor fabrication
  19th International Symposium on Power Electronics, Ee 2017
  DOI: 10.1109/PEE.2017.8171664
• Förthner M., Papenheim M., Rumler M., Stumpf F., Baier L., Rommel M., Scheer HC., Frey L.:
  Polymerization related deformations in multilayer soft stamps for nanoimprint
  In: Journal of Applied Physics 122 (2017), Art.Nr.: 165305
  ISSN: 0021-8979
  DOI: 10.1063/1.5001463
• Girschikofsky MG., Förthner M., Rommel M., Frey L., Hellmann R.:
  Fabrication of Bragg grating sensors in UV-NIL structured Ormocer waveguides
  Integrated Optics: Devices, Materials, and Technologies XXI 2017
  DOI: 10.1117/12.2249665
• Girschikofsky MG., Rosenberger M., Förthner M., Rommel M., Frey L., Hellmann R.:
  Waveguide Bragg Gratings in Ormocer®s for Temperature Sensing
  In: Sensors 17 (2017), Art.Nr.: 2459
  ISSN: 1424-8220
  DOI: 10.3390/s17112459
• Hutzler A., Branscheid R., Schmutzler T., Jank M., Frey L., Spiecker E.:
  Controlled silver-shell growth on gold nanorods studied by in situ liquid cell TEM techniques
  Microscopy Conference 2017 (Lausanne, 21. August 2017 - 25. August 2017)
  In: Microscopy Conference 2017 (MC 2017) - Proceedings 2017
  URL: https://epub.uni-regensburg.de/36099/
• Hutzler A., Matthus C., Rommel M., Frey L.:
  Generalized approach to design multi-layer stacks for enhanced optical detectability of ultrathin layers
  In: Applied Physics Letters 110 (2017), Art.Nr.: 021909
  ISSN: 0003-6951
  DOI: 10.1063/1.4973968
• Häublein V., Birnbaum E., Ryssel H., Frey L., Djupmyr M.:
  Ion Implantation of Polypropylene Films for the Manufacture of Thin Film Capacitors
  21st International Conference on Ion Implantation Technology, IIT 2016
  DOI: 10.1109/IIT.2016.7882887
• Hürner A., Erlbacher T., Bauer A., Frey L.:
  Monolithically integrated solid-state-circuit-breaker for high power applications
  11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016
  DOI: 10.4028/www.scientific.net/MSF.897.661
• Matthus C., Burenkov A., Erlbacher T.:
  Optimization of 4H-SiC photodiodes as selective UV sensors
  In: Materials Science Forum (2017), S. 622-625
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.897.622
• Matthus C., Erlbacher T., Hess A., Bauer AJ., Frey L.:
  Advanced 4H-SiC p-i-n Diode as Highly Sensitive High-Temperature Sensor Up To 460 °C
  In: IEEE Transactions on Electron Devices 64 (2017), S. 3399-3404
  ISSN: 0018-9383
  DOI: 10.1109/TED.2017.2711271
• Matthus C., Erlbacher T., Schöfer B., Bauer A., Frey L.:
  Implementation of 4H-SiC PiN-diodes as nearly linear temperature sensors up to 800 K towards SiC multi-sensor integration
  In: Materials Science Forum (2017), S. 618-621
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.897.618
• Meister T., Ellinger F., Bartha JW., Berroth M., Burghartz J., Claus M., Frey L., Gagliardi A., Grundmann M., Hesselbarth J., Klauk H., Leo K., Lugli P., Mannsfeld S., Manoli Y., Negra R., Neumaier D., Pfeiffer U., Riedl T., Scheinert S., Scherf U., Thiede A., Tröster G., Vossiek M., Weigel R., Wenger C., Alavi G., Becherer M., Chavarin CA., Darwish M., Ellinger M., Fan CY., Fritsch M., Grotjahn F., Gunia M., Haase K., Hillger P., Ishida K., Jank M., Knobelspies S., Kuhl M., Lupina G., Naghadeh SM., Münzenrieder N., Özbek S., Rasteh M., Salvatore GA., Schrüfer D., Strobel C., Theisen M., Tuckmantel C., Von Wenckstern H., Wang Z., Zhang Z.:
  Program FFlexCom - High frequency flexible bendable electronics for wireless communication systems
  In: 2017 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS) 2017
  DOI: 10.1109/COMCAS.2017.8244733
• Rosenberger M., Roth G-., Adelmann B., Schmauß B., Hellmann R.:
  Temperature Referenced Planar Bragg Grating Strain Sensor in fs-Laser Cut COC Specimen
  In: IEEE Photonics Technology Letters (2017)
  ISSN: 1041-1135
  DOI: 10.1109/LPT.2017.2693401
• Schimmel S., Koch M., Macher P., Kimmel AC., Steigerwald T., Alt N., Schlücker E., Wellmann P.:
  Solubility and dissolution kinetics of GaN in supercritical ammonia in presence of ammonoacidic and ammonobasic mineralizers
  In: Journal of Crystal Growth 479 (2017), S. 59-66
  ISSN: 0022-0248
  DOI: 10.1016/j.jcrysgro.2017.09.027
• Schimmel S., Meisel M., Hertweck B., Steigerwald T., Nebel C., Alt N., Schlücker E., Wellmann P.:
  Chemical stability of carbon-based inorganic construction materials for in situ x-ray measurements of ammonothermal crystal growth of nitrides
  5th German-Swiss Conference on Crystal Growth (Freiburg, 8. März 2017 - 10. März 2017)
• Steinberg C., Rumler M., Manuel RA., Papenheim M., Wang S., Mayer A., Becker M., Rommel M., Scheer HC.:
  Complex 3D structures via double imprint of hybrid structures and sacrificial mould techniques
  In: Microelectronic Engineering 176 (2017), S. 22-27
  ISSN: 0167-9317
  DOI: 10.1016/j.mee.2017.01.009

2016

• Albrecht M., Erlbacher T., Bauer A., Frey L.:
  Potential of 4H-SiC CMOS for high temperature applications using advanced lateral p-MOSFETs
  In: Materials Science Forum 858 (2016), S. 821-824
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.858.821
• Banzhaf S., Schwaiger S., Erlbacher T., Bauer A., Frey L.:
  Post-Trench Processing of Silicon Deep Trench Capacitors for Power Electronic Applications
  DOI: 10.1109/ISPSD.2016.7520862
• Burenkov A., Matthus C., Erlbacher T.:
  Optimization of 4H-SiC UV Photodiode Performance Using Numerical Process and Device Simulation
  In: IEEE Sensors Journal 16 (2016), S. 4246-4252
  ISSN: 1530-437X
  DOI: 10.1109/JSEN.2016.2539598
• Ditze S., Endruschat A., Schriefer T., Rosskopf A., Heckel T.:
  Inductive power transfer system with a rotary transformer for contactless energy transfer on rotating applications
  2016 IEEE International Symposium on Circuits and Systems, ISCAS 2016
  DOI: 10.1109/ISCAS.2016.7538876
• Endruschat A., Heckel T., Reiner R., Waltereit P., Quay R., Ambacher O., März M., Eckardt B., Frey L.:
  Slew rate control of a 600 V 55 mΩ GaN cascode
  4th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2016 (Fayetteville, AR, 7. November 2016 - 9. November 2016)
  DOI: 10.1109/WiPDA.2016.7799963
• Frey L., Förthner M., Hellmann R., Rommel M., Girschikofsky MG.:
  Waveguide Bragg gratings in Ormocer hybrid polymers
  In: Optics Express 24 (2016), S. 14725-14736
  ISSN: 1094-4087
  DOI: 10.1364/OE.24.014725
• Förthner M., Rumler M., Stumpf F., Fader R., Rommel M., Frey L., Girschikofsky M., Belle S., Hellmann R., Klein JJ.:
  Hybrid polymers processed by substrate conformal imprint lithography for the fabrication of planar Bragg gratings
  In: Applied Physics A-Materials Science & Processing 122 (2016)
  ISSN: 0947-8396
  DOI: 10.1007/s00339-016-9767-6
• Gruenler S., Rattmann G., Erlbacher T., Bauer AJ., Frey L.:
  Monolithic 3D TSV-based high-voltage, high-temperature capacitors
  In: Microelectronic Engineering 156 (2016), S. 19-23
  ISSN: 0167-9317
  DOI: 10.1016/j.mee.2016.02.008
• Heckel T., Rettner C., März M.:
  Fundamental Efficiency Limits in Power Electronic Systems
  2015 IEEE International Telecommunications Energy Conference, INTELEC 2015
  DOI: 10.1109/INTLEC.2015.7572399
• Hutzler A., Branscheid R., Jank M., Frey L., Spiecker E.:
  Graphene-Supported Microwell Liquid Cell for In Situ Electron Microscopy in Materials Science
  In: Microscopy and Microanalysis 22 (2016), S. 78 - 79
  ISSN: 1431-9276
  DOI: 10.1017/S1431927616012423
• Hutzler A., Branscheid R., Jank M., Frey L., Spiecker E.:
  Graphene‐supported microwell liquid cell for in situ studies in TEM and SEM
  European Microscopy Congress 2016 (Lyon, 28. August 2016 - 2. September 2016)
  In: European Microscopy Congress 2016 Volume 1: Instrumentation and Methods 2016
  DOI: 10.1002/9783527808465.EMC2016.6612
• Hürner A., Mitlehner H., Erlbacher T., Bauer A., Frey L.:
  Conduction loss reduction for bipolar injection field-effect-transistors (BIFET)
  Trans Tech Publications Ltd, 2016
  ISBN: 9783035710427
  DOI: 10.4028/www.scientific.net/MSF.858.917
• Jelinek M., Laven JG., Ganagona N., Job R., Schustereder W., Schulze HJ., Rommel M., Frey L.:
  Metastable defects in proton implanted and annealed silicon
  In: Solid State Phenomena 242 (2016), S. 169-174
  ISSN: 1012-0394
  DOI: 10.4028/www.scientific.net/SSP.242.169
• Jelinek M., Laven JG., Ganagona N., Schustereder W., Schulze HJ., Rommel M., Frey L.:
  The efficiency of hydrogen-doping as a function of implantation temperature
  Trans Tech Publications Ltd, 2016
  ISBN: 9783038356080
  DOI: 10.4028/www.scientific.net/SSP.242.175
• Krach F., Heckel T., Frey L., Bauer A., Erlbacher T., März M.:
  Innovative Monolithic RC-Snubber for Fast Switching Power Modules
  9th International Conference on Integrated Power Electronics Systems (CIPS)
• Krach F., Thielen N., Heckel T., Bauer A., Erlbacher T., Frey L., Heckel T.:
  Silicon integrated RC snubbers for applications up to 900V with reduced mechanical stress and high manufacturability
  (2016), Art.Nr.: 7548452
  ISSN: 15483770
  DOI: 10.1109/DRC.2016.7548452
  (anderer)
• Kreutzer O., Heckel T., März M.:
  Using SiC MOSFET’s full potential – Switching faster than 200 kV/μs
  Trans Tech Publications Ltd, 2016
  ISBN: 9783035710427
  DOI: 10.4028/www.scientific.net/MSF.858.880
• Liu X., Wegener CM., Polster S., Jank M., Roosen A., Frey L.:
  Materials Integration for Printed Zinc Oxide Thin-Film Transistors: Engineering of a Fully-Printed Semiconductor/Contact Scheme
  In: Journal of Display Technology 12 (2016)
  ISSN: 1551-319X
  DOI: 10.1109/JDT.2015.2445378
• Lorentz V., Schwarz R., Heckel T., März M., Frey L., Heckel T.:
  Integrated galvanically isolated MOSFET and IGBT gate-driver circuit with switching speed control
  41st Annual Conference of the IEEE Industrial Electronics Society, IECON 2015
  DOI: 10.1109/IECON.2015.7392158
• Matthus C., Erlbacher T., Burenkov A., Bauer A., Frey L.:
  Ion implanted 4H-SiC UV pin-diodes for solar radiation detection – Simulation and characterization
  In: Materials Science Forum 858 (2016), S. 1032-1035
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.858.1032
• Meric Z., Mehringer C., Jank MPM., Peukert W., Frey L.:
  Electrical properties of solution processed layers based on Ge-Si alloy nanoparticles
  In: MRS Advances 1 (2016), S. 2331-2336
  ISSN: 2059-8521
  DOI: 10.1557/adv.2016.329
• Munoz LE., Bilyy R., Biermann MHC., Kienhoefer D., Maueröder C., Hahn J., Brauner JM., Weidner D., Chen J., Scharin-Mehlmann M., Janko C., Friedrich RP., Mielenz D., Dumych T., Lootsik MD., Schauer C., Schett G., Hoffmann M., Zhao Y., Herrmann M.:
  Nanoparticles size-dependently initiate self-limiting NETosis-driven inflammation
  In: Proceedings of the National Academy of Sciences of the United States of America 113 (2016), S. E5856-E5865
  ISSN: 0027-8424
  DOI: 10.1073/pnas.1602230113
• Oertel S., Jank M., Frey L., Hofmann C., Lang N., Struck M.:
  Screen-printed biochemical sensors for detection of ammonia levels in sweat - Towards integration with vital parameter monitoring sports gear
  9th International Conference on Biomedical Electronics and Devices, BIODEVICES 2016 - Part of 9th International Joint Conference on Biomedical Engineering Systems and Technologies, BIOSTEC 2016
  DOI: 10.5220/0005691501600165
• Pobegen G., Weiße J., Hauck M., Weber HB., Krieger M.:
  On the origin of threshold voltage instability under operating conditions of 4H-SiC n-channel MOSFETs
  In: Materials Science Forum 858 (2016)
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/MSF.858.473
• Polster S., Jank M., Frey L.:
  Correlation of film morphology and defect content with the charge-carrier transport in thin-film transistors based on ZnO nanoparticles
  In: Journal of Applied Physics 119 (2016)
  ISSN: 0021-8979
  DOI: 10.1063/1.4939289
• Preuster P., Wagner L., Nuß A., Geiling J., Steinberger M., Bösmann A., Wasserscheid P.:
  Evaluation of a novel reactor concept for the process intensification and intelligent heat management in the hydrogenation and dehydrogenation of Liquid Organic Hydrogen Carriers
  21st World Hydrogen Energy Conference 2016, WHEC 2016 (Saragossa, 13. Juni 2016 - 16. Juni 2016)
  URL: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85016937508&origin=inward
• Rumler M., Kollmuss M., Baier L., Michel F., Förthner M., Becker M., Rommel M., Frey L.:
  Combination of direct laser writing and soft lithography molds for combined nano- and microfabrication
  DOI: 10.1117/12.2248219
• Sanftl B., Joffe C., Trautmann M., Weigel R., Kölpin A.:
  Reliabe Data Link for Power Transfer Control in an Inductive Charging System for Electric Vehicles
  IEEE MTT-S International Conference on Microwaves for Intelligent Mobility (San Diego, USA)
  In: IEEE MTT-S International Conference on Microwaves for Intelligent Mobility 2016
  DOI: 10.1109/ICMIM.2016.7533929
• Schriefer T., Hofmann M.:
  Mechanical Reliability of Power Electronic Systems
  9th International Conference on Integrated Power Electronics Systems (Nuremberg, 8. März 2016 - 10. März 2016)
  URL: https://ieeexplore.ieee.org/document/7736747
• Spitzer P., Condic M., Herrmann M., Oberstein T., Scharin-Mehlmann M., Gilbert D., Friedrich O., Groemer T., Kornhuber J., Lang R., Maler JM.:
  Amyloidogenic amyloid-?-peptide variants induce microbial agglutination and exert antimicrobial activity
  In: Scientific Reports 6 (2016), S. 32228
  ISSN: 2045-2322
  DOI: 10.1038/srep32228
• Toumi, S. S., Ouennoughi Z., Strenger C., Frey L.:
  Determination of Fowler-Nordheim tunneling parameters in Metal-Oxide-Semiconductor structure including oxide field correction using a vertical optimization method
  In: Solid-State Electronics 122 (2016), S. 56-63
  ISSN: 0038-1101
  DOI: 10.1016/j.sse.2016.04.007
• Trautmann M., Joffe C., Pflaum F., Sanftl B., Weigel R., Heckel T., Kölpin A.:
  Implementation of Simultaneous Energy and Data Transfer in a Contactless Connector
  IEEE Topical Conference on Wireless Sensors and Sensor Networks (WiSNet) (Austin, TX)
  DOI: 10.1109/WISNET.2016.7444333
• Wegener CM., Spiehl D., Sauer HM., Mikschl F., Liu X., Kölpin N., Schmidt M., Jank M., Dörsam E., Roosen A.:
  Flexographic printing of nanoparticulate tin-doped indium oxide inks on PET foils and glass substrates
  In: Journal of Materials Science (2016)
  ISSN: 0022-2461
  DOI: 10.1007/s10853-016-9772-3
• Xie F., Weiß R., Weigel R.:
  Simple Mathematical Operation-Based Calibration Method for Giant Magnetoresistive Current Sensor Applying B-Spline Modeling
  In: IEEE Sensors Journal 16 (2016), S. 4733-4739
  ISSN: 1530-437X
  DOI: 10.1109/JSEN.2016.2558468
• Zhou X., Häublein V., Liu N., Nguyen NT., Zolnhofer E., Tsuchiya H., Manuela K., Meyer K., Schmuki P., Frey L.:
  TiO2 Nanotubes: Nitrogen-Ion Implantation at Low Dose Provides Noble-Metal-Free Photocatalytic H-2-Evolution Activity
  In: Angewandte Chemie International Edition 55 (2016), S. 3763-3767
  ISSN: 1433-7851
  DOI: 10.1002/anie.201511580
• Ziller J., Dräger T., Heckel T.:
  Inductive high data rate transmission for bearing systems
  IEEE Topical Conference on Wireless Sensors and Sensor Networks, WiSNet 2016
  DOI: 10.1109/WISNET.2016.7444332

2015

• Adelmann B., Hürner A., Roth GL., Hellmann R.:
  Back side ablation of SiC diodes using a q-switched NIR laser
  In: Journal of Laser Micro Nanoengineering 10 (2015), S. 190-194
  ISSN: 1880-0688
  DOI: 10.2961/jlmn.2015.02.0016
• Banzhaf C., Grieb M., Rambach M., Bauer A., Frey L.:
  Impact of post-trench processing on the electrical characteristics of 4H-SiC trench-MOS structures with thick top and bottom oxides
  Trans Tech Publications Ltd, 2015
  ISBN: 9783038354789
  DOI: 10.4028/www.scientific.net/MSF.821-823.753
• Dudek D., Fettweis G., Frey L., Kissinger D., Kutter C., Mathis W., Lugli P., Russer P., Weigel R., Wolff I.:
  Hidden Electronics
  In: Positionspapier des VDE, 2015, S. 1-24
  URL: https://www.vde.com/de/fg/gmm/news/documents/vde_pp_hidden\%20electronics_rz_web.pdf
  (Working Paper)
• Eckardt B., Heckel T.:
  High Power Density Automotive Converters using SiC or GaN Power Devices
  Automotive Power Electronics International Conference (APE)
  URL: http://www.sia.fr/publications/157-high-power-density-automotive-converters-using-sic-or-gan-power-devices
• Erlbacher T., Schwarzmann H., Bauer AJ., Doehler GH., Schreivogel M., Lutz T., Guillen FH., Graf J., Fix R., Frey L.:
  Modeling of ion drift in 4H-SiC-based chemical MOSFET sensors
  In: Journal of Vacuum Science & Technology B 33 (2015)
  ISSN: 1071-1023
  DOI: 10.1116/1.4903054
• Frey L., Osvet A., Zhou X., Haeublein V., Schmuki P., Frey L., Spiecker E., Mackovic M., Liu N., Hartmann M., Nakajima T., Venkatesan UM.:
  "Black" TiO2 Nanotubes Formed by High-Energy Proton Implantation Show Noble-Metal-co-Catalyst Free Photocatalytic H2-Evolution
  In: Nano Letters 15 (2015), S. 6815-6820
  ISSN: 1530-6984
  DOI: 10.1021/acs.nanolett.5b02663
• Fügl M., Mackh G., Meissner E., Frey L.:
  Assessment of dicing induced damage and residual stress on the mechanical and electrical behavior of chips
  2015 65th IEEE Electronic Components and Technology Conference, ECTC 2015
  DOI: 10.1109/ECTC.2015.7159594
• Girschikofsky MG., Förthner M., Rommel M., Frey L., Hellmann R.:
  Bragg gratings in imprinted Ormocer® waveguides
  24th International Conference on Plastic Optical Fibers, POF 2015
  URL: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84964659470&origin=inward
• Grosch J., Teuber E., Jank M., Lorentz V., März M., Frey L.:
  Device optimization and application study of low cost printed temperature sensor for mobile and stationary battery based Energy Storage Systems
  International Conference on Smart Energy Grid Engineering, SEGE 2015
  DOI: 10.1109/SEGE.2015.7324599
• Gruenler S., Rattmann G., Erlbacher T., Bauer AJ., Frey L.:
  High-voltage monolithic 3D capacitors based on through-silicon-via technology
  IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference, IITC/MAM 2015
  DOI: 10.1109/IITC-MAM.2015.7325655
• Heckel T., Eckhardt B., März M., Frey L., Heckel T.:
  SiC MOSFETs in hard-switching bidirectional DC/DC converters
  Trans Tech Publications Ltd, 2015
  ISBN: 9783038354789
  DOI: 10.4028/www.scientific.net/MSF.821-823.689
• Heckel T., Frey L.:
  A Novel Charge Based SPICE Model for Nonlinear Device Capacitances
  3rd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2015
  DOI: 10.1109/WiPDA.2015.7369263
• Hofmann M., Eckardt B., Heckel T.:
  Inverter Technology for High-Speed Drives Like Electric Turbochargers
  10th ETG/GMM-Symposium on Innovative Small Drives and Micro-Motor Systems (IKMT)
• Hürner A., Di Benedetto L., Erlbacher T., Mitlehner H., Bauer A., Frey L.:
  Robust double-ring junction termination extension design for high voltage power semiconductor devices based on 4H-SiC
  Trans Tech Publications Ltd, 2015
  ISBN: 9783038354789
  DOI: 10.4028/www.scientific.net/MSF.821-823.656
• Hürner A., Erlbacher T., Mitlehner H., Bauer A., Frey L.:
  Temperature dependent characterization of bipolar injection field- effect-transistors (BiFET) for determining the short-circuit-capability
  Trans Tech Publications Ltd, 2015
  ISBN: 9783038354789
  DOI: 10.4028/www.scientific.net/MSF.821-823.806
• Jelinek M., Laven JG., Kirnstoetter S., Schustereder W., Schulze H-., Rommel M., Frey L.:
  A DLTS study of hydrogen doped czochralski-grown silicon
  In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 365 (2015), S. 240-243
  ISSN: 0168-583X
  DOI: 10.1016/j.nimb.2015.07.078
• Kaliya Perumal Veerapandian S., Beuer S., Rumler M., Stumpf F., Thomas K., Pillatsch L., Michler J., Frey L., Rommel M.:
  Comparison of silicon and 4H silicon carbide patterning using focused ion beams
  In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 365 (2015), S. 44-49
  ISSN: 0168-583X
  DOI: 10.1016/j.nimb.2015.07.079
• Krach F., Schwarzmann H., Bauer A., Erlbacher T., Frey L.:
  Silicon nitride, a high potential dielectric for 600 v integrated RC-snubber applications
  In: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics 33 (2015), Art.Nr.: 01A112
  ISSN: 2166-2754
  DOI: 10.1116/1.4906082
• Noll S., Rambach M., Grieb M., Scholten D., Bauer A., Frey L.:
  Influence of annealing, oxidation and doping on conduction-band near interface traps in 4H-SiC characterized by low temperature conductance measurements
  Trans Tech Publications Ltd, 2015
  ISBN: 9783038354789
  DOI: 10.4028/www.scientific.net/MSF.821-823.476
• Paskaleva A., Rommel M., Hutzler A., Spassov D., Bauer A.:
  Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping
  In: ACS Applied Materials and Interfaces 7 (2015), S. 17032 - 17043
  ISSN: 1944-8244
  DOI: 10.1021/acsami.5b03071
  URL: http://pubs.acs.org/doi/abs/10.1021/acsami.5b03071
• Paskaleva A., Weinreich W., Bauer A., Lemberger M., Frey L.:
  Improved electrical behavior of ZrO2-based MIM structures by optimizing the O3 oxidation pulse time
  In: Materials Science in Semiconductor Processing 29 (2015), S. 124-131
  ISSN: 1369-8001
  DOI: 10.1016/j.mssp.2013.12.030
• Peukert W., Meric Z., Mehringer C., Jank M., Frey L., Karpstein N.:
  Tunable conduction type of solution-processed germanium nanoparticle based field effect transistors and their inverter integration
  In: Physical Chemistry Chemical Physics 17 (2015), S. 22106-22114
  ISSN: 1463-9076
  DOI: 10.1039/c5cp03321g
• Rouag, N., Ouennoughi Z., Rommel M., Murakami K., Frey L.:
  Current conduction mechanism of MIS devices using multidimensional minimization system program
  In: Microelectronics Reliability 55 (2015), S. 1028-1034
  ISSN: 0026-2714
  DOI: 10.1016/j.microrel.2015.05.001
• Salinaro A., Pobegen G., Aichinger T., Zippelius B., Peters DP., Friedrichs P., Frey L.:
  Charge pumping measurements on differently passivated lateral 4H-SiC MOSFETs
  In: IEEE Transactions on Electron Devices 62 (2015), S. 155-163
  ISSN: 0018-9383
  DOI: 10.1109/TED.2014.2372874
• Stadler A., Stolzke T., Gulden C.:
  Design and simulation of thermally optimized filter inductors for a 1mw windmill demonstrator
  2015 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2015
  URL: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84997418748∨igin=inward
• Stadler A., Stolzke T., Gulden C.:
  Optimized filter inductors for a 1MW windmill demonstrator with an objective to reduced converter size
  17th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2015
  DOI: 10.1109/EPE.2015.7309130
• Stolzke T., Stadler A., Gulden C.:
  Calculating phase currents for high frequency three phase inductors via the inductance matrix
  2015 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2015
  URL: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84997417432&origin=inward
• Szwarc R., Frey L., Weber H., Moder I., Erlbacher T., Rommel M., Bauer AJ.:
  Modelling of the electrochemical etch stop with high reverse bias across pn-junctions
  26th Annual SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2015
  DOI: 10.1109/ASMC.2015.7164437
• Wegener CM., Spiehl D., Mikschl F., Liu X., Roosen A.:
  Printing of Ultrathin Nanoparticulate Indium Tin Oxide Structures
  International Conference and Exhibition on Ceramic Interconnect and Ceramic Microsystems Technologies (CICMT)

2014

• Banzhaf C., Grieb M., Trautmann A., Bauer A., Frey L.:
  Influence of diverse post-trench processes on the electrical performance of 4H-SiC MOS structures
  Trans Tech Publications Ltd, 2014
  ISBN: 9783038350101
  DOI: 10.4028/www.scientific.net/MSF.778-780.595
• Banzhaf C., Grieb M., Trautmann A., Bauer A., Frey L.:
  Investigation of trenched and high temperature annealed 4H-SiC
  Trans Tech Publications Ltd, 2014
  ISBN: 9783038350101
  DOI: 10.4028/www.scientific.net/MSF.778-780.742
• Erlbacher T., Schwarzmann H., Krach F., Bauer AJ., Berberich SE., Kasko I., Frey L.:
  Reliability of monolithic RC-snubbers in MOS-based power modules
  5th Electronics System-Integration Technology Conference, ESTC 2014
  DOI: 10.1109/ESTC.2014.6962794
• Erlekampf J., Seebeck J., Savva P., Meissner E., Friedrich J., Alt N., Schlücker E., Frey L.:
  Numerical time-dependent 3D simulation of flow pattern and heat distribution in an ammonothermal system with various baffle shapes
  In: Journal of Crystal Growth 403 (2014), S. 96-104
  ISSN: 0022-0248
  DOI: 10.1016/j.jcrysgro.2014.06.007
• Frey L., Niedermeier MT., Wenger MM., Filimon R., Sedlacek V., Lorentz VR., Fort C., März M., Ferrieux JP.:
  Galvanically isolated differential data transmission using capacitive coupling and a modified Manchester algorithm for smart power converters
  2014 IEEE 23rd International Symposium on Industrial Electronics, ISIE 2014 (Istanbul)
  DOI: 10.1109/ISIE.2014.6865029
• Frey L., Trapnauskas J., Rommel M., Bauer AJ., Frey L.:
  Thickness mapping of high-κ dielectrics at the nanoscale
  In: Applied Physics Letters 104 (2014), Art.Nr.: 052907
  ISSN: 0003-6951
  DOI: 10.1063/1.4863947
• Fügl M., Mackh G., Meissner E., Frey L.:
  Analytical stress characterization after different chip separation methods
  In: Microelectronics Reliability 54 (2014), S. 1735-1740
  ISSN: 0026-2714
  DOI: 10.1016/j.microrel.2014.07.086
• Haublein V., Birnbaum E., Ryssel H., Frey L., Grimm W.:
  Modification of polypropylene films for thin film capacitors by ion implantation
  20th International Conference on Ion Implantation Technology, IIT 2014
  DOI: 10.1109/IIT.2014.6939968
• Heckel T., Frey L., Zeltner S.:
  Characterization and Application of 600 V Normally-Off GaN Transistors in Hard Switching DC/DC Converters
  26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014 (Waikoloa, HI)
  DOI: 10.1109/ISPSD.2014.6855976
• Hilden T., Jänker P., Frey L.:
  Comparison of Si/SiC semiconductor performance using experiment-based simulation
  International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2014 (Nuremberg)
  URL: https://www.scopus.com/record/display.uri?eid=2-s2.0-84906535889∨igin=inward
• Hürner A., Bonse C., Clemmer G., Kallinger B., Heckel T., Erlbacher T., Mitlehner H., Häublein V., Bauer A., Frey L., Heckel T.:
  Temperature and electrical field dependence of the ambipolar mobility in n-doped 4H-SiC
  Trans Tech Publications Ltd, 2014
  ISBN: 9783038350101
  DOI: 10.4028/www.scientific.net/MSF.778-780.487
• Hürner A., Mitlehner H., Erlbacher T., Bauer A., Frey L.:
  Experimental analysis of bipolar SiC-devices for future energy distribution systems
  2014 16th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2014
  DOI: 10.1109/EPE.2014.6910847
• Jelinek M., Laven JG., Job R., Schustereder W., Schulze HJ., Rommel M., Frey L.:
  New method to increase the doping efficiency of proton implantation in a high-dose regime
  13th High Purity and High Mobility Semiconductor Symposium - 2014 ECS and SMEQ Joint International Meeting
  DOI: 10.1149/06411.0199ecst
• Jelinek M., Laven JG., Rommel M., Schustereder W., Schulze HJ., Frey L., Job R.:
  Deep-level defects in high-dose proton implanted and high-temperature annealed silicon
  13th High Purity and High Mobility Semiconductor Symposium - 2014 ECS and SMEQ Joint International Meeting
  DOI: 10.1149/06411.0173ecst
• Jelinek M., Schustereder W., Laven JG., Schulze HJ., Kirnstoetter S., Rommel M., Frey L.:
  MeV-proton channeling in crystalline silicon
  20th International Conference on Ion Implantation Technology, IIT 2014
  DOI: 10.1109/IIT.2014.6940059
• Kilian D., Polster S., Vogeler I., Frey L., Jank M., Peukert W.:
  Pulsed direct flame deposition and thermal annealing of transparent amorphous indium zinc oxide films as active layers in field effect transistors
  In: ACS Applied Materials and Interfaces 6 (2014), S. 12245-12251
  ISSN: 1944-8244
  DOI: 10.1021/am501837u
• Koller TM., Schmid S., Sachnov S., Rausch MH., Wasserscheid P., Fröba AP.:
  Measurement and Prediction of the Thermal Conductivity of Tricyanomethanide- and Tetracyanoborate-Based Imidazolium Ionic Liquids
  In: International Journal of Thermophysics 35 (2014), S. 195-217
  ISSN: 0195-928X
  DOI: 10.1007/s10765-014-1617-1
• Landwehr J., Fader R., Rumler M., Rommel M., Bauer A., Frey L., Simon B., Fodor B., Petrik P., Schiener A., Winter B., Spiecker E.:
  Optical polymers with tunable refractive index for nanoimprint technologies
  In: Nanotechnology 25 (2014), S. Article number 505301
  ISSN: 1361-6528
  DOI: 10.1088/0957-4484/25/50/505301
• Laven JG., Jelinek M., Job R., Schustereder W., Schulze H-., Rommel M., Frey L.:
  DLTS characterization of proton-implanted silicon under varying annealing conditions
  In: Physica Status Solidi 251 (2014), S. 2189-2192
  ISSN: 0031-8957
  DOI: 10.1002/pssb.201400028
• Murakami K., Rommel M., Hudec B., Rosova A., Husekova K., Dobrocka E., Rammula R., Kasikov A., Han JH., Lee W., Song SJ., Paskaleva A., Bauer AJ., Frey L., Froehlich K., Aarik J., Hwang CS.:
  Nanoscale characterization of TiO2 films grown by atomic layer deposition on RuO2 electrodes
  In: ACS Applied Materials and Interfaces 6 (2014), S. 2486-2492
  ISSN: 1944-8244
  DOI: 10.1021/am4049139
• Noll S., Rambach M., Grieb M., Scholten D., Bauer A., Frey L.:
  Effect of shallow n-doping on field effect mobility in p-doped channels of 4H-SiC MOS field effect transistors
  Trans Tech Publications Ltd, 2014
  ISBN: 9783038350101
  DOI: 10.4028/www.scientific.net/MSF.778-780.702
• Oertel S., Jank M., Teuber E., Bauer A., Frey L.:
  High-mobility metal-oxide thin-film transistors by spray deposition of environmentally friendly precursors
  In: Thin Solid Films 553 (2014), S. 114-117
  ISSN: 0040-6090
  DOI: 10.1016/j.tsf.2013.11.061
• Scharin M., Rommel M., Dirnecker T., Marhenke J., Herrmann B., Rumler M., Fader R., Frey L., Herrmann M.:
  Bioactivation of plane and patterned PDMS thin films by wettability engineering
  In: BioNanoScience 4 (2014), S. 251-262
  ISSN: 2191-1630
  DOI: 10.1007/s12668-014-0145-6
• Schimmel S., Künecke U., Steigerwald T., Hertweck B., Alt N., Schlücker E., Wellmann P.:
  In Situ Visualization of GaN Crystals in Ammonothermal High Pressure Autoclaves by X-ray Imaging
  German Conference on Crystal Growth (Halle, 12. März 2014 - 14. März 2014)
• Stadler A., Huber R., Stolzke T., Gulden C.:
  Analytical calculation of copper losses in litz-wire windings of gapped inductors
  In: IEEE Transactions on Magnetics 50 (2014), Art.Nr.: 6748958
  ISSN: 0018-9464
  DOI: 10.1109/TMAG.2013.2282333
• Stadler A., Stolzke T., Gulden C.:
  A new generation of modular power inductors with minimum thermal resistance
  2014 16th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2014
  DOI: 10.1109/EPE.2014.6910771
• Stadler A., Stolzke T., Gulden C.:
  High frequency high current filter inductors with minimum thermal resistance
  16th International Power Electronics and Motion Control Conference and Exposition, PEMC 2014
  DOI: 10.1109/EPEPEMC.2014.6980507
• Strenger C., Uhnevionak V., Mortet V., Ortiz G., Erlbacher T., Burenkov A., Bauer A., Cristiano F., Bedel-Pereira E., Pichler P., Ryssel H., Frey L.:
  Systematic analysis of the high-and low-field channel mobility in lateral 4H-SiC MOSFETs
  15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013 (Miyazaki)
  In: Silicon Carbide and Related Materials 2013 2014
  DOI: 10.4028/www.scientific.net/MSF.778-780.583
• Thesen MW., Nees D., Ruttloff S., Rumler M., Rommel M., Schlachter F., Grützner S., Vogler M., Schleunitz A., Grützner G.:
  Inkjetable and photo-curable resists for large-area and high-throughput roll-to-roll nanoimprint lithography
  In: Journal of Micro-Nanolithography MEMS and MOEMS 13 (2014)
  ISSN: 1932-5150
  DOI: 10.1117/1.JMM.13.4.043003
• Thesen MW., Rumler M., Schlachter F., Grützner S., Moormann C., Rommel M., Nees D., Ruttloff S., Pfirrmann S., Vogler M., Schleunitz A., Grützner G.:
  Enabling Large Area and High Throughput Roll-to-Roll NIL by Novel Inkjetable and Photo-curable NIL-Resists
  DOI: 10.1117/12.2046279

2013

• Adelmann B., Hürner A., Schlegel T., Bauer A., Frey L., Hellmann R.:
  Laser alloying nickel on 4H-silicon carbide substrate to generate ohmic contacts
  In: Journal of Laser Micro Nanoengineering 8 (2013), S. 97-101
  ISSN: 1880-0688
  DOI: 10.2961/jlmn.2013.01.0019
  (Zeitungsartikel)
• Banzhaf C., Grieb M., Trautmann A., Bauer A., Frey L.:
  Characterization of diverse gate oxides on 4H-SiC 3D trench-MOS structures
  2013
  ISBN: 9783037856246
  DOI: 10.4028/www.scientific.net/MSF.740-742.691
• Baum M., Polster S., Jank M., Alexeev I., Frey L., Schmidt M.:
  Laser melting of nanoparticulate transparent conductive oxide thin films
  In: Journal of Laser Micro Nanoengineering 8 (2013), S. 144-148
  ISSN: 1880-0688
  DOI: 10.2961/jlmn.2013.02.0005
• Behrens T., Suenner T., Geinitz E., Schletz A., Frey L.:
  Optimization of copper top-side metallization for high performance SiC-devices
  2013
  ISBN: 9783037856246
  DOI: 10.4028/www.scientific.net/MSF.740-742.801
• Fader R., Landwehr J., Rumler M., Rommel M., Bauer A., Frey L., Voelkel R., Brehm M., Kraft A.:
  Functional epoxy polymer for direct nano-imprinting of micro-optical elements
  In: Microelectronic Engineering 110 (2013), S. 90-93
  ISSN: 0167-9317
  DOI: 10.1016/j.mee.2013.02.030
• Fader R., Rommel M., Bauer A., Rumler M., Frey L., Verschuuren MA., Van De Laar R., Ji R., Schoembs U.:
  Accuracy of wafer level alignment with substrate conformal imprint lithography
  In: Journal of Vacuum Science & Technology B 31 (2013), S. 6FB02
  ISSN: 1071-1023
  DOI: 10.1116/1.4824696
• Hackenberg M., Rommel M., Rumler M., Lorenz J., Pichler P., Huet K., Negro R., Fisicaro ., La Magna A., Taleb N., Quillec M.:
  Melt Depth and Time Variations during Pulsed Laser Thermal Annealing with One and More Pulses,
  In: Solid-State Device Research Conference (ESSDERC), 2013 Proceedings of the European, 2013, S. 214-217
  DOI: 10.1109/ESSDERC.2013.6818857
• Häublein V., Temmel G., Mitlehner H., Rattmann G., Strenger C., Hürner A., Bauer A., Ryssel H., Frey L.:
  Comparative study of n-LIGBT and n-LDMOS structures on 4H-SiC
  2013
  ISBN: 9783037856246
  DOI: 10.4028/www.scientific.net/MSF.740-742.887
• Hürner A., Schlegl T., Adelmann B., Mitlehner H., Hellmann R., Bauer A., Frey L.:
  Alloying of ohmic contacts to n-type 4H-SiC via laser irradiation
  2013
  ISBN: 9783037856246
  DOI: 10.4028/www.scientific.net/MSF.740-742.773
• Iglesias V., Martin-Martinez J., Porti M., Rodriguez R., Nafria M., Aymerich X., Erlbacher T., Rommel M., Murakami K., Bauer AJ., Frey L., Bersuker G.:
  Bimodal CAFM TDDB distributions in polycrystalline HfO2 gate stacks: The role of the interfacial layer and grain boundaries
  In: Microelectronic Engineering 109 (2013), S. 129-132
  ISSN: 0167-9317
  DOI: 10.1016/j.mee.2013.03.022
• Jokubavicius V., Huang HH., Schimmel S., Liljedahl R., Yakimova R., Syväjärvi M.:
  Towards bulk-like 3C-SiC growth using low off-axis substrates
  In: Materials Science Forum 740-742 (2013), S. 275-278
  ISSN: 0255-5476
  DOI: 10.4028/www.scientific.net/msf.740-742.275
• Kölpin N., Wegener CM., Teuber E., Polster S., Frey L., Roosen A.:
  Conceptional design of nano-particulate ITO inks for inkjet printing of electron devices
  In: Journal of Materials Science 48 (2013), S. 1623-1631
  ISSN: 0022-2461
  DOI: 10.1007/s10853-012-6919-8
• Laven JG., Job R., Hans Joachim S., Niedernostheide FJ., Schustereder W., Frey L.:
  Activation and dissociation of proton-induced donor profiles in silicon
  In: ECS Journal of Solid State Science and Technology 2 (2013)
  ISSN: 2162-8769
  DOI: 10.1149/2.028309jss
• Noll S., Scholten D., Grieb M., Bauer A., Frey L.:
  Electrical impact of the aluminum p-implant annealing on lateral MOSFET transistors on 4H-SiC n-epi
  2013
  ISBN: 9783037856246
  DOI: 10.4028/www.scientific.net/MSF.740-742.521
• Ouennoughi Z., Strenger C., Bourouba F., Haeublein V., Ryssel H., Frey L.:
  Conduction mechanisms in thermal nitride and dry gate oxides grown on 4H-SiC
  In: Microelectronics Reliability 53 (2013), S. 1841-1847
  ISSN: 0026-2714
  DOI: 10.1016/j.microrel.2013.06.009
• Rommel M., Jambreck JD., Lemberger M., Bauer A., Frey L., Murakami K., Richter C., Weinzierl P.:
  Influence of parasitic capacitances on conductive AFM I-V measurements and approaches for its reduction
  In: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics 31 (2013), Art.Nr.: 01A108
  ISSN: 2166-2754
  DOI: 10.1116/1.4768679
• Rommel M., Rumler M., Haas A., Bauer AJ., Frey L.:
  Processing of silicon nanostructures by Ga+ resistless lithography and reactive ion etching
  In: Microelectronic Engineering 110 (2013), S. 177-182
  ISSN: 0167-9317
  DOI: 10.1016/j.mee.2013.03.081
• Rumler M., Fader R., Haas A., Rommel M., Bauer A., Frey L.:
  Evaluation of resistless Ga+ beam lithography for UV NIL stamp fabrication
  In: Nanotechnology 24 (2013), S. 365302
  ISSN: 0957-4484
  DOI: 10.1088/0957-4484/24/36/365302
• Stadler A., Huber R., Stolzke T., Gulden C.:
  The simulation of copper losses in litz-wire windings considering air gap fringing fields
  International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2013 (Nuremberg)
  URL: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84906347177∨igin=inward
• Strenger C., Uhnevionak V., Burenkov A., Bauer A., Pichler P., Erlbacher T., Ryssel H., Frey L.:
  Influence of ion implantation in SiC on the channel mobility in lateral n-channel MOSFETs
  DOI: 10.1149/05804.0071ecst

2012

• Alt NS., Meissner E., Schlücker E., Frey L.:
  In situ monitoring technologies for ammonthermal reactors
  In: Physica Status Solidi (C) Current Topics in Solid State Physics 9 (2012), S. 436-439
  ISSN: 1862-6351
  DOI: 10.1002/pssc.201100361
• Baum M., Polster S., Jank M., Alexeev I., Frey L., Schmidt M.:
  Efficient laser induced consolidation of nanoparticulate ZnO thin films with reduced thermal budget
  In: Applied Physics A-Materials Science & Processing 107 (2012), S. 269-273
  ISSN: 0947-8396
  DOI: 10.1007/s00339-012-6871-0
• Daves W., Krauss A., Haeublein V., Bauer A., Frey L.:
  4H-SiC MOSFETs with a stable protective coating for harsh environment applications
  2012
  ISBN: 9783037854198
  DOI: 10.4028/www.scientific.net/MSF.717-720.1089
• Daves W., Krauß A., Häublein V., Bauer A., Frey L.:
  Structural and reliability analysis of ohmic contacts to SiC with a stable protective coating for harsh environment applications
  In: ECS Journal of Solid State Science and Technology 1 (2012)
  ISSN: 2162-8769
  DOI: 10.1149/2.019201jss
• Erlbacher T., Bauer AJ., Frey L.:
  Significant on-resistance reduction of LDMOS devices by intermitted trench gates integration
  In: IEEE Transactions on Electron Devices 59 (2012), S. 3470-3476
  ISSN: 0018-9383
  DOI: 10.1109/TED.2012.2220777
• Erlbacher T., Bickermann M., Kallinger B., Meissner E., Bauer A., Frey L.:
  Ohmic and rectifying contacts on bulk AlN for radiation detector applications
  In: Physica Status Solidi (C) Current Topics in Solid State Physics 9 (2012), S. 968-971
  ISSN: 1862-6351
  DOI: 10.1002/pssc.201100341
• Erlbacher T., Schwarzmann H., Bauer AJ., Berberich SE., vom Dorp J., Frey L.:
  Improving module performance and reliability in power electronic applications by monolithic integration of RC-snubbers
  24th International Symposium on Power Semiconductor Devices and ICs, ISPSD'12 (Bruges)
  DOI: 10.1109/ISPSD.2012.6229078
• Fader R., Schmitt H., Rommel M., Bauer AJ., Frey L., Ji R., Hornung M., Brehm M., Vogler M.:
  Novel organic polymer for UV-enhanced substrate conformal imprint lithography
  In: Microelectronic Engineering 98 (2012), S. 238-241
  ISSN: 0167-9317
  DOI: 10.1016/j.mee.2012.07.010
• Frey L., Hürner A., Bauer A., Erlbacher T.:
  Feasibility and limitations of anti-fuses based on bistable non-volatile switches for power electronic applications
  In: Solid-State Electronics 75 (2012), S. 33-36
  ISSN: 0038-1101
  DOI: 10.1016/j.sse.2012.05.004
• Hilden T., Janker P., Frey L.:
  Reverse recovery of All-SiC switches
  International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2012 (Nuremberg)
  URL: https://www.scopus.com/record/display.uri?eid=2-s2.0-84874123396∨igin=inward
• Hofmann M., Schletz A., Domes K., März M., Frey L.:
  Modular inverter power electronic for intelligent e-drives
  2012 2nd International Electric Drives Production Conference, EDPC 2012 (Nuremberg)
  DOI: 10.1109/EDPC.2012.6425132
• Häublein V., Ryssel H., Frey L.:
  Purity of ion beams: Analysis and simulation of mass spectra and mass interferences in ion implantation
  In: Advances in Materials Science and Engineering 2012 (2012), Art.Nr.: 610150
  ISSN: 1687-8434
  DOI: 10.1155/2012/610150
• Krach F., Hertel S., Waldmann D., Jobst J., Krieger M., Reshanov S., Schoner A., Weber HB.:
  A switch for epitaxial graphene electronics: Utilizing the silicon carbide substrate as transistor channel
  In: Applied Physics Letters 100 (2012), S. 122102
  ISSN: 0003-6951
  DOI: 10.1063/1.3695157
• Laven J., Job R., Schulze H-., Niedernostheide FJ., Schustereder W., Frey L.:
  The thermal budget of hydrogen-related donor profiles: Diffusion-limited activation and thermal dissociation
  12th High Purity Silicon Symposium - 222nd ECS Meeting (Honolulu, HI)
  DOI: 10.1149/05005.0161ecst
• Lorentz V., Wenger M., Giegerich M., Zeltner S., März M., Frey L.:
  Smart battery cell monitoring with contactless data transmission
  16th International Forum on Advanced Microsystems for Automotive Applications, AMAA 2012 (Berlin)
  DOI: 10.1007/978-3-642-29673-4_2
• Lorentz V., Wenger M., Grosch J., Giegerich M., Jank M., März M., Frey L.:
  Novel cost-efficient contactless distributed monitoring concept for smart battery cells
  21st IEEE International Symposium on Industrial Electronics, ISIE 2012 (Hangzhou)
  DOI: 10.1109/ISIE.2012.6237285
• Maier R., Haeublein V., Ryssel H., Völlm H., Feili D., Seidel H., Frey L.:
  Solid-phase epitaxy of silicon amorphized by implantation of the alkali elements rubidium and cesium
  19th International Conference on Ion Implantation Technology 2012, IIT 2012 (Valladolid)
  DOI: 10.1063/1.4766542
• Mueller J., Boescke TS., Schroeder U., Hoffmann R., Mikolajick T., Frey L.:
  Nanosecond polarization switching and long retention in a novel MFIS-FET based on ferroelectric HfO 2
  In: IEEE Electron Device Letters 33 (2012), S. 185-187
  ISSN: 0741-3106
  DOI: 10.1109/LED.2011.2177435
• Mueller J., Boescke TS., Schroeder U., Mueller S., Braeuhaus D., Boettger U., Frey L., Mikolajick T.:
  Ferroelectricity in simple binary ZrO 2 and HfO 2
  In: Nano Letters 12 (2012), S. 4318-4323
  ISSN: 1530-6984
  DOI: 10.1021/nl302049k
• Roll G., Jakschik S., Goldmann M., Wachowiak A., Mikolajick T., Frey L.:
  Intrinsic MOSFET leakage of high-k peripheral DRAM devices: Measurement and simulation
  2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012 (Hsinchu)
  DOI: 10.1109/VLSI-TSA.2012.6210165
• Rommel M., Bauer AJ., Frey L.:
  Simple and efficient method to fabricate nano cone arrays by FIB milling demonstrated on planar substrates and on protruded structures
  In: Microelectronic Engineering 98 (2012), S. 242-245
  ISSN: 0167-9317
  DOI: 10.1016/j.mee.2012.07.009
• Rumler M., Rommel M., Erlekampf J., Azizi M., Geiger T., Bauer AJ., Meissner E., Frey L.:
  Characterization of grain boundaries in multicrystalline silicon with high lateral resolution using conductive atomic force microscopy
  In: Journal of Applied Physics 112 (2012), Art.Nr.: 034909
  ISSN: 0021-8979
  DOI: 10.1063/1.4746742
• Schmitt H., Duempelmann P., Fader R., Rommel M., Bauer AJ., Frey L., Brehm M., Kraft A.:
  Life time evaluation of PDMS stamps for UV-enhanced substrate conformal imprint lithography
  In: Microelectronic Engineering 98 (2012), S. 275-278
  ISSN: 0167-9317
  DOI: 10.1016/j.mee.2012.04.032
• Schmitt H, Jäger J, et al:
  Application and Feasibility of Fault Current Limiters in Power Systems
  In: Electra (2012), S. 51-57
  ISSN: 0424-7701
• Schwarzmann H., Erlbacher T., Bauer A., Ryssel H., Frey L.:
  Amplitude modulated resonant push-pull driver for piezoelectric transformers in switching power applications
  2012 7th International Conference on Integrated Power Electronics Systems, CIPS 2012 (Nuremberg)
  URL: https://www.scopus.com/record/display.uri?eid=2-s2.0-84881091503∨igin=inward
• Stadler A., Gulden C., Stolzke T.:
  Nonlinear inductors for active power factor correction circuits
  15th International Power Electronics and Motion Control Conference and Exposition, EPE-PEMC 2012 ECCE Europe (Novi Sad)
  DOI: 10.1109/EPEPEMC.2012.6397508
• Stadler A., Stolzke T., Gulden C.:
  Nonlinear power inductors for large current crest factors
  International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2012 (Nuremberg)
  URL: https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84874154772∨igin=inward