Dr.-Ing. Norman Böttcher

2024

• Boettcher N., Rommel M., Erlbacher T.:
  Analytical Modelling of the Quasi-Static Operation of a Monolithically Integrated 4H-SiC Circuit Breaker Device
  In: Solid State Phenomena 360 (2024), p. 111-118
  ISSN: 1012-0394
  DOI: 10.4028/p-EkvC4B
• Böttcher N., Kauth J., Rommel M., May A., Baier L., Jank M.:
  Investigation of Ohmic Contacts and Resistances of a 4H-SiC CMOS Technology up to 550◦C
  In: Journal of Microelectronics and Electronic Packaging 21 (2024), p. 73-79
  ISSN: 1551-4897
  DOI: 10.4071/001c.127390
• Böttcher N., Sakai K., Szabo M., Beuer S., Rommel M.:
  Fast Estimation of the Lateral Fidelity of Ion Implantation in 4H-SiC through Calibration to JFET Transfer Characteristics in TCAD
  In: Solid State Phenomena 358 (2024), p. 133-140
  ISSN: 1012-0394
  DOI: 10.4028/p-4Rj3jY

2023

• Böttcher N., Takamori T., Wada K., Erlbacher T., Saito W., Nishizawa SI.:
  Adjustable Current Limiting Function with a Monolithically Integrated SiC Circuit Breaker Device
  In: IEEE Transactions on Industry Applications 59 (2023), p. 6427-6435
  ISSN: 0093-9994
  DOI: 10.1109/TIA.2023.3288856

2021

• Boettcher N., Erlbacher T.:
  A Monolithically Integrated SiC Circuit Breaker
  In: IEEE Electron Device Letters (2021)
  ISSN: 0741-3106
  DOI: 10.1109/LED.2021.3102935

2025

• Hartmann A., Boettcher N.:
  A Novel Design Variation of a Monolithically Integrated SiC Circuit Breaker
  48th MIPRO ICT and Electronics Convention, MIPRO 2025 (Opatija, 2. Juni 2025 - 6. Juni 2025)
  In: Snjezana Babic, Zeljka Car, Marina Cicin-Sain, Pavle Ergovic, Tihana Galina Grbac, Vera Gradisnik, Stjepan Gros, Alan Jovic, Darko Jurekovic, Tihomir Katulic, Marko Koricic, Vedran Mornar, Juraj Petrovic, Karolj Skala, Dejan Skvorc, Vlado Sruk, Edvard Tijan, Joe S. Valacich, Neven Vrcek, Boris Vrdoljak (ed.): 2025 MIPRO 48th ICT and Electronics Convention, MIPRO 2025 - Proceedings 2025
  DOI: 10.1109/MIPRO65660.2025.11131705

2022

• Becker T., Boettcher N., Erlbacher T.:
  Influence of Non-Stoichiometric Silicon Nitride Layer Thickness on Electrical Properties and Manufacturability of 900 V Silicon RC-Snubbers
  12th International Conference on Integrated Power Electronics Systems, CIPS 2022 (Berlin, DEU, 15. März 2022 - 17. März 2022)
  In: ETG-Fachbericht 2022
  URL: https://www.scopus.com/record/display.uri?eid=2-s2.0-85136098985&origin=inward
• Boettcher N., Takamori T., Wada K., Saito W., Nishizawa SI., Erlbacher T.:
  Fabrication Aspects and Switching Performance of a Self-Sensing 800 V SiC Circuit Breaker Device
  34th IEEE International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022 (Vancouver, BC, CAN, 22. Mai 2022 - 25. Mai 2022)
  In: Proceedings of the International Symposium on Power Semiconductor Devices and ICs 2022
  DOI: 10.1109/ISPSD49238.2022.9813628
• Boettcher N., Takamori T., Wada K., Saito W., Nishizawa SI., Erlbacher T.:
  Short Circuit Performance and Current Limiting Mode of a Monolithically Integrated SiC Circuit Breaker for DC Applications up to 800 v
  24th European Conference on Power Electronics and Applications, EPE 2022 ECCE Europe (Hannover, 5. September 2022 - 9. September 2022)
  In: 24th European Conference on Power Electronics and Applications, EPE 2022 ECCE Europe 2022
• Böttcher N., Takamori T., Wada K., Erlbacher T., Saito W., Nishizawa SI.:
  Adjustable Current Limit Feature with a Self-Sensing and Self-Triggering Monolithically Integrated SiC Circuit Breaker Device
  2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022
  DOI: 10.1109/ECCE50734.2022.9948054

2020

• Boettcher N., Erlbacher T.:
  Design Considerations on a Monolithically Integrated, Self Controlled and Regenerative 900 V SiC Circuit Breaker
  2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020 (Suita, 23. September 2020 - 25. September 2020)
  In: 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020 2020
  DOI: 10.1109/WiPDAAsia49671.2020.9360279

2019

• Boettcher N., Heckel T., Erlbacher T., Pelaic K.:
  Silicon RC-Snubber for 900 V Applications Utilising non-Stoichiometric Silicon Nitride
  31st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) (Shanghai, 19. Mai 2019 - 23. Mai 2019)
  In: 31st International Symposium on Power Semiconductor Devices & ICs, NEW YORK: 2019
  DOI: 10.1109/ISPSD.2019.8757589
• Matlok S., Boettcher N., Jahn M., Hörauf P., Erlbacher T., Eckardt B.:
  Retrofitting Wide Band Gap Devices to classic Power Modules using Silicon RC Snubbers
  2019 PCIM Europe (Nürnberg, 7. Mai 2019 - 9. Mai 2019)
  URL: https://www.researchgate.net/publication/331642497_Retrofitting_Wide_Band_Gap_Devices_to_classic_Power_Modules_using_Silicon_RC_Snubbers

2018

• Yu Z., Zeltner S., Boettcher N., Rattmann G., Leib J., Bayer C., Schletz A., Erlbacher T., Frey L.:
  Heterogeneous Integration of Vertical GaN Power Transistor on Si Capacitor for DC-DC Converters
  7th Electronic System-Integration Technology Conference, ESTC 2018
  DOI: 10.1109/ESTC.2018.8546362