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Abstract

Radiation detectors have a wide range of applications, such as in medical technology, materials analysis, and security screening. Gallium nitride (GaN) shows great potential as a material for sensitive and fast radiation detectors.

In this thesis (Bachelor’s/Master’s), various GaN detector structures—ranging from 1D to 2D—are to be simulated using TCAD Sentaurus, their electrical and detector-physical properties investigated, and—where available—compared with and calibrated against experimental measurement data.

This thesis is intended for students of electrical engineering, physics, materials science, mechatronics, or related fields with a basic understanding of semiconductor physics and an interest in numerical simulation. Prior experience with TCAD and CAD is very helpful but not required.

Project type:

Bachelor’s thesis / Master’s thesis

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Status:

open

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Contact: