We always have topics available for bachelor’s and master’s theses, research internships, and student projects (e.g., research or master’s projects), as well as open positions for student/research assistants (HiWi positions) and lab students. Most of these are listed below.
If you cannot find a suitable topic there, we would still encourage you to contact us and share your ideas with us. Please direct your inquiries to Tobias Dirnecker. Please indicate what type of student work you are looking for, what qualifications you have, and which areas of work are of particular interest to you.
- BA/MA: Simulation of GaN-based radiation detectors using TCAD Sentaurus— Abstract Radiation detectors have a wide range of applications, such as in medical technology, materials analysis, and security screening. Gallium nitride (GaN) shows great potential as a material for sensitive and fast radiation detectors. In this thesis (Bachelor’s/Master’s), various GaN detector structures—ranging from 1D to 2D—are to be simulated using TCAD Sentaurus, their electrical… Read more: BA/MA: Simulation of GaN-based radiation detectors using TCAD Sentaurus
- MA: Edge Termintion in SuperjunctionDescription Superjunction devices have already demonstrated in silicon technologies that the previous “silicon limit” can be exceeded. They allow for a smaller chip area per device and/or a reduction of the on-resistance compared to conventional designs at the same design voltage. The industry is increasingly moving towards silicon carbide (SiC) for high-voltage applications. Due to… Read more: MA: Edge Termintion in Superjunction
- MA: Simulation of passive optical devices on the 4H-SiC platformDescription For several years, the Chair of Electronic Devices has been working in the innovative field of quantum devices and process integration for quantum-electronic applications. The focus lies on using the semiconductor material silicon carbide (SiC) for quantum computing and integrating SiC qubits into electronic devices. In this context, the quantum-electronic properties of point defects… Read more: MA: Simulation of passive optical devices on the 4H-SiC platform
Dr.-Ing. Tobias Dirnecker
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Prof. Dr.-Ing. Jörg Schulze
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