Research is being conducted on novel active and passive photonic devices based on silicon carbide (SiC). Due to its wide bandgap, nonlinear optical effects, and optically active defects (color centers), SiC offers significant advantages over silicon for both active and passive photonics as well as quantum photonics.

In the field of active photonic devices, the large bandgap of 3.2 eV in the 4H-SiC polytype is utilized to realize integrated UV photodetectors. These can be used as a significantly more cost-effective alternative to conventional UV photodiodes. Additionally, research is being conducted on materials and devices for integrated light emission and detection.

Passive photonics encompasses, among other things, the development of waveguides, beam splitters, and ring resonators based on the SiC-on-Insulator (SiCOI) platform. A central focus is the integrated guidance, manipulation, and filtering of light for color-center-based quantum technologies (quantum sensing, communication, and computing).

Research Topics

• Development, Design, and Modeling of Vertical 4H-SiC PIN Photodiodes for Highly Sensitive UV-C and VUV Photon Detection (Ph.D. project in collaboration with Fraunhofer IISB)
• Silicon Carbide Qubits Towards a Fab-Ready Technology (Fabian Magerl)
• Integrated photodetector concepts for color-center-based quantum electronics (Robert Kammel)
• Development of a SiC APD for the detection of UVC radiation (Ph.D. project in cooperation with Fraunhofer IISB)

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