Abgeschlossen 2025FA: Design of 4H SiC CMOS logic gates and sequential circuits
Vishvas Nanjunda Swamy – Wide bandgap semiconductor, particularly Silicon Carbide (SiC), based electronic devices and circuits are presently being developed for use in hightemperature, high-power, and high-radiation conditions under which conventional semiconductors cannot adequately perform[1]. This study highlights the trade-offs between power efficiency, speed, and area. Utilizing the second generation of the process design kit […]Vishvas Nanjunda Swamy – Wide bandgap semiconductor, particularly Silicon Carbide (SiC), based electronic devices and circuits are presently being developed for use in hightemperature, high-power, and high-radiation conditions under which conventional semiconductors cannot adequately perform[1]. This study highlights the trade-offs between power efficiency, speed, and area. Utilizing the second generation of the process design kit […]
