Completed student projects

Browse all posts in the Completed student projects category.

1 to 6 of 26

07APR 2026
Completed 2025
BA: Electrical Characterization of High-Temperature Degradation in Vertical SiC Trench-Pin Diodes
Daniel Ramig – Abstract will be available soon. — Project type: Bachelor thesis — Status: Completed — Contact
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07APR 2026
Completed 2026
BA: Evaluation of the conductance method for determining the interface state densities of 4H-SiC-based MOS structures
Lukas Fehler — The aim of this thesis was to evaluate the conductance method using a Keysight E4980A Precision LCR Meter for determining the interface state density in 4H-SiC-based MOS structures. To this end, n-type 4H-SiC MOS capacitors with a 55 nm thick SiO2 layer were characterized at room temperature of 300 K by both […]
Read more about BA: Evaluation of the conductance method for determining the interface state densities of 4H-SiC-based MOS structures
01APR 2026
Completed 2026
MA: Simulation-based analysis of error effects in the characterization of ohmic contacts on 4H-SiC using CBKR test structures
Fabian Schellenberger — This work investigates the Cross bridge Kelvin resistor (CBKR) structure for the measurement of specific contact resistances 𝜌c on 4H-SiC. The influences that reduce the measurement precision of this test structure are investigated using a simulation-based approach. The information gained with these simulations allow for the extraction of design rules for improved […]Fabian Schellenberger — This work investigates the Cross bridge Kelvin resistor (CBKR) structure for the measurement of specific contact resistances 𝜌c on 4H-SiC. The influences that reduce the measurement precision of this test structure are investigated using a simulation-based approach. The information gained with these simulations allow for the extraction of design rules for improved […]
Read more about MA: Simulation-based analysis of error effects in the characterization of ohmic contacts on 4H-SiC using CBKR test structures
31MAR 2026
Completed 2026
MA: Electrical characterization and comparative analysis of MAGFET designs in a 4H-SiC CMOS technology
Pedram Sarmadi — This thesis presents a systematic electrical characterization of n- and p-type split-drain MAGFETs fabricated in a 4H-SiC CMOS technology developed at Fraunhofer IISB. The study quantifies key sensor metrics under variations of device geometry, electrical biasing and temperature. Measurements include operation without magnetic field, under a static permanent magnetic field, and after […]Pedram Sarmadi — This thesis presents a systematic electrical characterization of n- and p-type split-drain MAGFETs fabricated in a 4H-SiC CMOS technology developed at Fraunhofer IISB. The study quantifies key sensor metrics under variations of device geometry, electrical biasing and temperature. Measurements include operation without magnetic field, under a static permanent magnetic field, and after […]
Read more about MA: Electrical characterization and comparative analysis of MAGFET designs in a 4H-SiC CMOS technology
02MAR 2026
Completed 2026
MA: Investigation of correlations between process data, test structure properties and device caracteristics of MOSFETs via machine learning models
Zhifeng Huang — In recent years, artificial intelligence (AI) technologies such as machine learning have developed rapidly. The decrease in computing cost provides a potentially efficient solution for monitoring, analyzing, and predicting key parameters of metal-oxide-semiconductor fieldeffect transistors (MOSFETs).Based on this development, this work investigates a method that uses a random forest regressor model to […]Zhifeng Huang — In recent years, artificial intelligence (AI) technologies such as machine learning have developed rapidly. The decrease in computing cost provides a potentially efficient solution for monitoring, analyzing, and predicting key parameters of metal-oxide-semiconductor fieldeffect transistors (MOSFETs).Based on this development, this work investigates a method that uses a random forest regressor model to […]
Read more about MA: Investigation of correlations between process data, test structure properties and device caracteristics of MOSFETs via machine learning models
01MAR 2026
Completed 2026
FA: Characterization of SiC thin films on SiO₂/Si substrates before and after thermal post-treatment
Tobias Eilender — Project type: Student research project — Status: Completed — Contact:
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