Research is being conducted into modern device concepts that enable efficient control and conversion of electrical energy. In addition to optimizing device parameters such as minimizing switching speeds, reducing resistance in the conductive state, or increasing voltage resistance and current carrying capacity, systematic investigations are being conducted on the influence of defects on the yield and reliability of the devices.

Current research topics:

• Functionalization of the tunnel effect for power transistors (Jan Dick)
• Investigation of advanced concepts for SiC MOS power transistors with trench structures (Power Trench MOSFETs) (Stephan Kühn)
• Characterization and evaluation of material defects with regard to yield and reliability of SiC MOS power transistors with trench structures (Power Trench MOSFETs) (Nadja Kölbel)

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