Julian Schwarz

Chair of Electron Devices

Research associates

Address

Cauerstraße 6 91058 Erlangen
Room: 01.156, Floor: 01

2026

2025

2024

2023

2019

2018

2025

  • , , , :
    Electroluminescent Behavior of Defects in 4H-SiC Light Emitting Diodes
    48th MIPRO ICT and Electronics Convention, MIPRO 2025 (Opatija, 2. June 2025 - 6. June 2025)
    In: 2025 MIPRO 48th ICT and Electronics Convention
    DOI: 10.1109/MIPRO65660.2025.11132079

  • Electronic devices based on the 2D material black phosphorus - layer-dependent properties

    (Third Party Funds Single)

    Project leader:
    Term: 16. September 2021 - 15. September 2024
    Acronym: HU 2827/2-1
    Funding source: DFG-Einzelförderung / Sachbeihilfe (EIN-SBH)
    Two-dimensional materials show enormous potential concerning application in electronic devices because of their extraordinary properties. The utilization of materials of this kind, however, is accompanied by significant challenges as layer-dependent properties substantially determine potential device functionalities. These challenges are caused by an extensive lack of systematic studies investigating fabrication processes of electronic devices, including optimization as well as resulting electrical functionalities considering number of layers and anisotropy. Studies of this kind are intrinsically complex and defying as non-destructive methods for determining the number of layers of 2D materials integrated in electronic devices have to be combined and tuned with layer-dependent measurements of electrical properties. Within the framework of this project the influence of the number of layers on device properties of electronic devices based on the 2D material black phosphorous will be distinctly determined by a methodical combination of analytical reflectance spectroscopy and measurements of the electronic transport. For this purpose, various device architectures will be investigated with respect to their layer-dependent properties and anisotropy. These properties include both purely electronical and valleytronical aspects. The number of layers is ascertained by a custom-built optical method which exploits the properties of the spectral reflectance of the material. For varying device architectures various approaches like lateral and vertical contacting, different gate dielectrics, tunneling contacts as well as different surface passivations are utilized. As operating principle for fundamental and electrical characterization, field effect, Hall effect and valley-Hall effect are exploited. Obtained insights will contribute to a fundamental comprehension of properties of 2D materials with respect to their applicability in modern and future-based electronics.
  • Physikalische Modellierung mikrospektroskopischer Messungen zur Charakterisierung von optischen Schichtsystemen

    (Own Funds)

    Project leader:
    Term: since 1. May 2021