Navigation

PhD Position (m/f) (TVL 13) – Electronic Devices Based On 2D Material Black Phosphorous

The Chair of Electron Devices looks for a PhD student (m/w/d) for:

Optimization of fabrication and characterization of electronic devices based on the 2D material black phosphorous

2D materials are a highly interesting class of materials for applications in microelectronics. Many of those 2D materials exhibit extraordinary properties like a high charge-carrier mobility, thermal conductivity, mechanical stability, or impermeability against liquids or gases. Common deposition techniques for 2D materials are mechanical exfoliation or chemical vapor deposition (CVD) onto catalytically active substrates (e.g. metals like Copper or Nickel) and a subsequent transfer onto the substrate of choice. A process integration of these materials into conventional semiconductor processes, however, remains challenging due to incompatibilities with classical fabrication technology.

Black phosphorous (BP) which is a 2D semiconductor features a band gap that is tunable via adjusting the number of layers. A deliberate fabrication of electronic devices based on BP exhibiting distinct properties, however, remains problematic in many regards. Due to BP being almost entirely deposited via exfoliation, the exact number of layers is far from being easily controlled. Also, the high reactivity of BP in the presence of oxygen- or water-containing atmospheres requires suitable passivation strategies. In the end, anisotropic transport of charges has to be considered when conceiving BP devices.

Within the framework of a DFG project the aforementioned issues will be tackled in close collaboration of the LEB (Department Electrical Engineering) and the Professorship of Applied Physics (Department Physics), as well as the Fraunhofer IISB.

 

The assignment of the incumbent (m/f/d) include but are not limited to:

  • Refinement and advancement of the fabrication of transistor structures based on the 2D material black phosphorous especially focusing on gate dielectric and passivation
  • Microspectroscopic (optical, IR, UV, polarization dependent) characterization of fabricated devices as well as determination of electronic device parameters (IV/CV(T,B), Hall, valleytronic) in collaboration
  • Correlation of electronic properties with the number of layers of black phosphorous
  • Development of physical models for correlating the device properties with the number of individual layers of the 2D semiconductor

 

Required qualifications:

  • Completed academic degree in the subject, electrical engineering, physics, materials sciences or similar
  • Profound knowledge in the subject of semiconductor technology, microspectroscopy, 2D materials and/or electronic devices or deep interest in gaining respective
  • Independent way of working, self-initiative and ability to work in a team
  • Good practice in German language
  • Experiences in programming with Python or comparable coding language

 

Preferable qualifications:

  • Affinity for handling of scientific questions
  • Practical experiences in the area of semiconductor fabrication, device characterization, or spectroscopy
  • Pursuit of a doctorate

 

Earliest starting date:

Immediately

 

Kind of engagement:

TV-L E13, non-tenured full-time position

 

Please send your convincing application or questions to the job offer to:

 Dr. Andreas Hutzler

Electron Devices (LEB)

Friedrich-Alexander University Erlangen-Nürnberg (FAU)

Cauerstraße 6

91058 Erlangen

 

09131/85-28638

andreas.hutzler@fau.de

 

Disabled persons with equal qualification will be considered preferably.

The FAU aims at increasing the quota of women in science and explicitly requests for applications of female candidates.