Roland Nagy
Prof. Dr.-Ing. Roland Nagy
Publikationen
2023
Scalable Quantum Memory Nodes Using Nuclear Spins in Silicon Carbide
In: Physical Review Applied 19 (2023), Art.Nr.: 034026
ISSN: 2331-7019
DOI: 10.1103/PhysRevApplied.19.034026
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2022
Optical Microscopy Systems for the Detection of Unlabeled Nanoparticles
In: International Journal of Nanomedicine Volume 17 (2022), S. 2139-2163
ISSN: 1176-9114
DOI: 10.2147/IJN.S355007
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2021
Narrow inhomogeneous distribution of spin-active emitters in silicon carbide
In: Applied Physics Letters 118 (2021), S. 144003
ISSN: 0003-6951
DOI: 10.1063/5.0046563
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Removing the orientational degeneracy of the TS defect in 4H-SiC by electric fields and strain
In: New Journal of Physics 23 (2021), Art.Nr.: 073002
ISSN: 1367-2630
DOI: 10.1088/1367-2630/abfb3e
URL: https://iopscience.iop.org/article/10.1088/1367-2630/abfb3e
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2020
Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide
In: Nature Communications 11 (2020), Art.Nr.: 2516
ISSN: 2041-1723
DOI: 10.1038/s41467-020-16330-5
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2019
Laser Writing of Scalable Single Color Centers in Silicon Carbide
In: Nano Letters 19 (2019), S. 2377-2383
ISSN: 1530-6984
DOI: 10.1021/acs.nanolett.8b05070
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High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide
In: Nature Communications 10 (2019), Art.Nr.: 1954
ISSN: 2041-1723
DOI: 10.1038/s41467-019-09873-9
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Spectrally Stable Defect Qubits with no Inversion Symmetry for Robust Spin-To-Photon Interface
In: Physical Review Applied 11 (2019), Art.Nr.: 044022
ISSN: 2331-7019
DOI: 10.1103/PhysRevApplied.11.044022
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2018
Quantum Properties of Dichroic Silicon Vacancies in Silicon Carbide
In: Physical Review Applied 9 (2018), Art.Nr.: 034022
ISSN: 2331-7019
DOI: 10.1103/PhysRevApplied.9.034022
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