Roland Nagy

Prof. Dr.-Ing. Roland Nagy

Department Elektrotechnik-Elektronik-Informationstechnik (EEI)
Lehrstuhl für Elektronische Bauelemente

Raum 1.163
Cauerstr. 6
91058 Erlangen

Parthasarathy SK., Kallinger B., Kaiser F., Berwian P., Dasari D., Friedrich J., Nagy R.:
Scalable Quantum Memory Nodes Using Nuclear Spins in Silicon Carbide
In: Physical Review Applied 19 (2023), Art.Nr.: 034026
ISSN: 2331-7019
DOI: 10.1103/PhysRevApplied.19.034026

Friedrich RP., Kappes M., Cicha I., Tietze R., Braun C., Schneider-Stock R., Nagy R., Alexiou C., Janko C.:
Optical Microscopy Systems for the Detection of Unlabeled Nanoparticles
In: International Journal of Nanomedicine Volume 17 (2022), S. 2139-2163
ISSN: 1176-9114
DOI: 10.2147/IJN.S355007

Nagy R., Dasari DBR., Babin C., Liu D., Vorobyov V., Niethammer M., Widmann M., Linkewitz T., Gediz I., Stoehr R., Weber HB., Ohshima T., Ghezellou M., Son NT., Ul-Hassan J., Kaiser F., Wrachtrup J.:
Narrow inhomogeneous distribution of spin-active emitters in silicon carbide
In: Applied Physics Letters 118 (2021), S. 144003
ISSN: 0003-6951
DOI: 10.1063/5.0046563
Rühl M., Lehmeyer J., Nagy R., Weißer M., Bockstedte M., Krieger M., Weber HB.:
Removing the orientational degeneracy of the TS defect in 4H-SiC by electric fields and strain
In: New Journal of Physics 23 (2021), Art.Nr.: 073002
ISSN: 1367-2630
DOI: 10.1088/1367-2630/abfb3e
URL: https://iopscience.iop.org/article/10.1088/1367-2630/abfb3e

Morioka N., Babin C., Nagy R., Gediz I., Hesselmeier E., Liu D., Joliffe M., Niethammer M., Dasari D., Vorobyov V., Kolesov R., Stoehr R., Ul-Hassan J., Nguyen Tien Son ., Ohshima T., Udvarhelyi P., Thiering G., Gali A., Wrachtrup J., Kaiser F.:
Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide
In: Nature Communications 11 (2020), Art.Nr.: 2516
ISSN: 2041-1723
DOI: 10.1038/s41467-020-16330-5

Chen YC., Salter PS., Niethammer M., Widmann M., Kaiser F., Nagy R., Morioka N., Babin C., Erlekampf J., Berwian P., Booth MJ., Wrachtrup J.:
Laser Writing of Scalable Single Color Centers in Silicon Carbide
In: Nano Letters 19 (2019), S. 2377-2383
ISSN: 1530-6984
DOI: 10.1021/acs.nanolett.8b05070
Nagy R., Niethammer M., Widmann M., Chen YC., Udvarhelyi P., Bonato C., Hassan JU., Karhu R., Ivanov IG., Nguyen Tien Son ., Maze JR., Ohshima T., Soykal OO., Gali A., Lee SY., Kaiser F., Wrachtrup J.:
High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide
In: Nature Communications 10 (2019), Art.Nr.: 1954
ISSN: 2041-1723
DOI: 10.1038/s41467-019-09873-9
Udvarhelyi P., Nagy R., Kaiser F., Lee SY., Wrachtrup J., Gali A.:
Spectrally Stable Defect Qubits with no Inversion Symmetry for Robust Spin-To-Photon Interface
In: Physical Review Applied 11 (2019), Art.Nr.: 044022
ISSN: 2331-7019
DOI: 10.1103/PhysRevApplied.11.044022

Nagy R., Widmann M., Niethammer M., Dasari DBR., Gerhardt I., Soykal OO., Radulaski M., Ohshima T., Vuckovic J., Nguyen Tien Son ., Ivanov IG., Economou SE., Bonato C., Lee SY., Wrachtrup J.:
Quantum Properties of Dichroic Silicon Vacancies in Silicon Carbide
In: Physical Review Applied 9 (2018), Art.Nr.: 034022
ISSN: 2331-7019
DOI: 10.1103/PhysRevApplied.9.034022