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Optical Lithography: Technology, Physical Effects, and Modelling

Dozent/in

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Zeit/Ort n.V.:

Die Vorlesung findet voraussichtlich über Zoom statt. Weitere Hinweise finden Sie im StudOn-Kurs zur Vorlesung.

  • Do 10:15-11:45

Studienfächer / Studienrichtungen

  • WF EEI-MA ab Sem. 1
  • WF EEI-BA ab Sem. 5
  • WF EEI-MA ab Sem. 1
  • WF AOT-GL ab Sem. 1
  • PF NT-MA ab Sem. 1

Inhalt

Semiconductor lithography covers the process of pattern transfer from a mask/layout to a photosensitive layer on the surface of a wafer. It is one of the most critical steps in the fabrication of microelectronic circuits. The majority of semiconductor chips are fabricated by optical projection lithography. Other lithographic techniques are used to fabricate lithographic masks or new optical and mechanical devices on the micro- or nanometer scale. Innovations such as the introduction of optical proximity correction OPC), phase shift masks (PSM), special illumination techniques, chemical amplified resist (CAR) materials, immersion techniques have pushed the smallest feature sizes, which are produced by optical projection techniques, from several wavelengths in the early 80ties to less than a quarter of a wavelength nowadays.
This course reviews different types of optical lithographies and compares them to other methods. The advantages, disadvantages, and limitations of lithographic methods are discussed from different perspectives. Important components of lithographic systems, such as masks, projection systems, and photoresist will be described in detail. Physical and chemical effects such as the light diffraction from small features on advanced photomasks, image formation in high numerical aperture systems, and coupled kinetic/diffusion processes in modern chemical amplified resists will be analysed. The course includes an in-depth introduction to lithography simulation which is used to devise and optimize modern lithographic processes.

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Titel

Optical Lithography: Technology, Physical Effects, and Modelling

Zusätzliche Informationen

Erwartete Teilnehmerzahl: 20