{"id":6437,"date":"2026-07-08T11:21:03","date_gmt":"2026-07-08T09:21:03","guid":{"rendered":"https:\/\/www.leb.tf.fau.de\/?page_id=6437"},"modified":"2026-07-08T11:21:10","modified_gmt":"2026-07-08T09:21:10","slug":"publikationen","status":"publish","type":"page","link":"https:\/\/www.leb.tf.fau.de\/en\/research\/publikationen\/","title":{"rendered":"Publications"},"content":{"rendered":"<div class=\"cris\"><h3>2026<\/h3><ul class=\"cris-publications \" lang=\"en\"><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Chirala VYMR.<\/span>, <span class=\"author\" itemprop=\"author\">Wostatek T.<\/span>, <span class=\"author\" itemprop=\"author\">Kasumurthy  Rajendra S.<\/span>, <span class=\"author\" itemprop=\"author\">Savani M.<\/span>, <span class=\"author\" itemprop=\"author\">Schimmel S.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/365724106?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Data-Driven Analysis of GaN Dissolution in Supercritical Ammonia \u2013 Towards a Predictive Solubility Model for Ammonothermal Crystal Growth<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">21st European Meeting on Supercritical Fluids (EMSF 2026)<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">TU Clausthal-Zellerfeld<\/span><\/span>, <span itemprop=\"startDate\" content=\"2026-06-14\">14. June 2026<\/span> - <span itemprop=\"endDate\" content=\"2026-06-17\">17. June 2026<\/span>)<\/span><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Fritsch C.<\/span>, <span class=\"author\" itemprop=\"author\">Serwe A.<\/span>, <span class=\"author\" itemprop=\"author\">Jovanovic S.<\/span>, <span class=\"author\" itemprop=\"author\">Ranganathan H.<\/span>, <span class=\"author\" itemprop=\"author\">Hans M.<\/span>, <span class=\"author\" itemprop=\"author\">Hutzler A.<\/span>, <span class=\"author\" itemprop=\"author\">Dornseiffer J.<\/span>, <span class=\"author\" itemprop=\"author\">Kornienko N.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/361154931?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">CO2- and CO-Conversion to Methanol over promoted CuO\/ZnO-based infiltration composite catalyst spheres \u2014 Characterization, experimentals and comparative reaction kinetics<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_361154931\"><span itemprop=\"name\"><strong>Applied Catalysis A-General<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_361154931\" \/><span itemprop=\"volumeNumber\">713<\/span><\/span>  (<span itemprop=\"datePublished\">2026<\/span>), Article No.: <span itemprop=\"pagination\">120675<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_361154931\"><span itemprop=\"issn\">ISSN: 0926-860X<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.apcata.2025.120675' target='blank' itemprop=\"sameAs\">10.1016\/j.apcata.2025.120675<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Haller M.<\/span>, <span class=\"author\" itemprop=\"author\">Hewelt J.<\/span>, <span class=\"author\" itemprop=\"author\">Chirala VYMR.<\/span>, <span class=\"author\" itemprop=\"author\">Tran LV.<\/span>, <span class=\"author\" itemprop=\"author\">Bhide A.<\/span>, <span class=\"author\" itemprop=\"author\">Wegner M.<\/span>, <span class=\"author\" itemprop=\"author\">F\u00f6rster S.<\/span>, <span class=\"author\" itemprop=\"author\">Widdra W.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/365725673?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Host-Atom-Driven Transformation of a Honeycomb Oxide into  a Dodecagonal Quasicrystal<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_365725673\"><span itemprop=\"name\"><strong>Physical Review Letters<\/strong><\/span><\/span> (<span itemprop=\"datePublished\">2026<\/span>)<br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_365725673\"><span itemprop=\"issn\">ISSN: 0031-9007<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1103\/ws7j-tvty' target='blank' itemprop=\"sameAs\">10.1103\/ws7j-tvty<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Schwarberg J.<\/span>, <span class=\"author\" itemprop=\"author\">Magerl F.<\/span>, <span class=\"author\" itemprop=\"author\">Beuer S.<\/span>, <span class=\"author\" itemprop=\"author\">May A.<\/span>, <span class=\"author\" itemprop=\"author\">Gobert C.<\/span>, <span class=\"author\" itemprop=\"author\">Siebert M.<\/span>, <span class=\"author\" itemprop=\"author\">Miersch C.<\/span>, <span class=\"author\" itemprop=\"author\">M\u00f6ller H.<\/span>, <span class=\"author\" itemprop=\"author\">Knolle W.<\/span>, <span class=\"author\" itemprop=\"author\">Luo C.<\/span>, <span class=\"author\" itemprop=\"author\">Dick J.<\/span>, <span class=\"author\" itemprop=\"author\">Beyer FC.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Schulze J.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/365136812?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Impact of Surface Treatment on Noise in PL Measurements of Silicon Vacancies in 4H-SiC Lateral PIN-Diodes<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_365136812\"><span itemprop=\"name\"><strong>Nano Letters<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_365136812\" \/><span itemprop=\"volumeNumber\">26<\/span><\/span>  (<span itemprop=\"datePublished\">2026<\/span>), p. <span itemprop=\"pagination\">6567-6575<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_365136812\"><span itemprop=\"issn\">ISSN: 1530-6984<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1021\/acs.nanolett.6c00646' target='blank' itemprop=\"sameAs\">10.1021\/acs.nanolett.6c00646<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Schwarz J.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer J.<\/span>, <span class=\"author\" itemprop=\"author\">Ghazal R.<\/span>, <span class=\"author\" itemprop=\"author\">Schrotz AM.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Hutzler A.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/357163646?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Probing crystal axis orientation of birefringent materials via polarized microspectroscopy and anisotropic optical modeling<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_357163646\"><span itemprop=\"name\"><strong>JPhys Photonics<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_357163646\" \/><span itemprop=\"volumeNumber\">8<\/span><\/span>  (<span itemprop=\"datePublished\">2026<\/span>), p. <span itemprop=\"pagination\">015029<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_357163646\"><span itemprop=\"issn\">ISSN: 2515-7647<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1088\/2515-7647\/ae2e68' target='blank' itemprop=\"sameAs\">10.1088\/2515-7647\/ae2e68<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Seidenath M.<\/span>, <span class=\"author\" itemprop=\"author\">J\u00e4ger D.<\/span>, <span class=\"author\" itemprop=\"author\">Wilhelm J.<\/span>, <span class=\"author\" itemprop=\"author\">Rauh H.<\/span>, <span class=\"author\" itemprop=\"author\">M\u00e4rz M.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/365107614?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">In Situ Coating Thickness Measurement of Parylene Using a Capacitive Sensor<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_365107614\"><span itemprop=\"name\"><strong>Journal of Electronic Materials<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_365107614\" \/><span itemprop=\"volumeNumber\">7<\/span><\/span>  (<span itemprop=\"datePublished\">2026<\/span>), Article No.: <span itemprop=\"pagination\">11<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_365107614\"><span itemprop=\"issn\">ISSN: 0361-5235<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.3390\/electronicmat7020011' target='blank' itemprop=\"sameAs\">10.3390\/electronicmat7020011<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Weber J.<\/span>, <span class=\"author\" itemprop=\"author\">Rauh H.<\/span>, <span class=\"author\" itemprop=\"author\">Leib J.<\/span>, <span class=\"author\" itemprop=\"author\">M\u00e4rz M.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/360572030?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Capillary assisted automated silver direct bond of chip-on-chip through a novel sponge dipping approach<\/a><\/strong><\/span><br \/> (<span itemprop=\"datePublished\">2026<\/span>)<\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.36227\/techrxiv.176948352.23951073\/v1' target='blank' itemprop=\"sameAs\">10.36227\/techrxiv.176948352.23951073\/v1<\/a><br \/>(online publication)<\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Wostatek T.<\/span>, <span class=\"author\" itemprop=\"author\">Tian L.<\/span>, <span class=\"author\" itemprop=\"author\">Wei Y.<\/span>, <span class=\"author\" itemprop=\"author\">Neumeier S.<\/span>, <span class=\"author\" itemprop=\"author\">Schimmel S.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/365264423?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Experimental method and thermodynamic concept for investigating and rationalizing oxygen gettering by ammonothermal reactor walls<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">9th International Workshop on Crystal Growth Technology<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Berlin<\/span><\/span>, <span itemprop=\"startDate\" content=\"2026-06-08\">8. June 2026<\/span> - <span itemprop=\"endDate\" content=\"2026-06-11\">11. June 2026<\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"name\" style=\"font-weight:bold\">Abstract Book 9th International Workshop on Crystal Growth Technology<\/span>, <span itemprop=\"publisher\" itemscope itemtype=\"http:\/\/schema.org\/Organization\"><span class=\"city\" itemprop=\"address\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"addressLocality\">Berlin<\/span><\/span>: <\/span> <span itemprop=\"datePublished\">2026<\/span><\/span><br \/>URL: <a href='https:\/\/iwcgt-9.ikz-berlin.de\/ img\/2vm89F8\/ iwcgt-9-abstractbook.pdf' target='blank' itemprop=\"url\">https:\/\/iwcgt-9.ikz-berlin.de\/ img\/2vm89F8\/ iwcgt-9-abstractbook.pdf<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Yazdihojatabadi S.<\/span>, <span class=\"author\" itemprop=\"author\">Wostatek T.<\/span>, <span class=\"author\" itemprop=\"author\">Schimmel S.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/360212119?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Reactor materials and their role in ammonothermal growth of\r\nhigh-purity functional nitrides<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">14th Annual jDGKK Meeting<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Karlsruhe, Germany<\/span><\/span>, <span itemprop=\"startDate\" content=\"2026-03-03\">3. March 2026<\/span> - <span itemprop=\"endDate\" content=\"2026-03-03\">3. March 2026<\/span>)<\/span><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">\u017dan A.<\/span>, <span class=\"author\" itemprop=\"author\">Schwarberg J.<\/span>, <span class=\"author\" itemprop=\"author\">Wilhelm J.<\/span>, <span class=\"author\" itemprop=\"author\">Zimmermann V.<\/span>, <span class=\"author\" itemprop=\"author\">Topi\u010d M.<\/span>, <span class=\"author\" itemprop=\"author\">Jo\u0161t M.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/362342030?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Parylene Capping for Prolonged Stability of Perovskite Solar Cells<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_362342030\"><span itemprop=\"name\"><strong>Solar RRL<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_362342030\" \/><span itemprop=\"volumeNumber\">10<\/span><\/span>  (<span itemprop=\"datePublished\">2026<\/span>), Article No.: <span itemprop=\"pagination\">e70343<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_362342030\"><span itemprop=\"issn\">ISSN: 2367-198X<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1002\/solr.70343' target='blank' itemprop=\"sameAs\">10.1002\/solr.70343<\/a><\/li><\/ul><h3>2025<\/h3><ul class=\"cris-publications \" lang=\"en\"><li itemscope itemtype=\"http:\/\/schema.org\/Thesis\"><span class=\"author\" itemprop=\"author\">Bauer J.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/354807794?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Modellierung mikrospektroskopischer Reflektanz- und Transmittanzmessungen zur Brechungsindex-Bestimmung<\/a><\/strong><\/span> (Master thesis, <span itemprop=\"datePublished\">2025<\/span>)<\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Bl\u00e4\u00df U.<\/span>, <span class=\"author\" itemprop=\"author\">Wu M.<\/span>, <span class=\"author\" itemprop=\"author\">Epelbaum B.<\/span>, <span class=\"author\" itemprop=\"author\">Mei\u00dfner E.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/336407029?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Self-organised ordering of scandium into basal monolayers of aluminium nitride and its implication for the growth of well-crystallized (Al,Sc)N materials for electronic devices<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_336407029\"><span itemprop=\"name\"><strong>Journal of Materials Chemistry C<\/strong><\/span><\/span> (<span itemprop=\"datePublished\">2025<\/span>)<br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_336407029\"><span itemprop=\"issn\">ISSN: 2050-7526<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1039\/d4tc04545a' target='blank' itemprop=\"sameAs\">10.1039\/d4tc04545a<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Chatterjee A.<\/span>, <span class=\"author\" itemprop=\"author\">Wostatek T.<\/span>, <span class=\"author\" itemprop=\"author\">Schimmel S.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/336656211?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Growth kinetics - a key aspect of every semiconductor synthesis<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">13th annual meeting of the young crystal growers (jDGKK)<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Frankfurt am Main<\/span><\/span>, <span itemprop=\"startDate\" content=\"2025-03-04\">4. March 2025<\/span> - <span itemprop=\"endDate\" content=\"2025-03-04\">4. March 2025<\/span>)<\/span><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Chirala VYMR.<\/span>, <span class=\"author\" itemprop=\"author\">Schimmel S.<\/span>, <span class=\"author\" itemprop=\"author\">Civas EN.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/338518385?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Measuring solute concentrations in ammonothermal solution via in situ X-ray absorption - estimating detection limits for novel nitrides<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">DPG-Fr\u00fchjahrstagung der Sektion Kondensierte Materie (SKM)<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Universit\u00e4t Regensburg<\/span><\/span>, <span itemprop=\"startDate\" content=\"2025-03-16\">16. March 2025<\/span> - <span itemprop=\"endDate\" content=\"2025-03-21\">21. March 2025<\/span>)<\/span><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Drexler K.<\/span>, <span class=\"author\" itemprop=\"author\">Zhou Y.<\/span>, <span class=\"author\" itemprop=\"author\">Wunder B.<\/span>, <span class=\"author\" itemprop=\"author\">Lorentz V.<\/span>, <span class=\"author\" itemprop=\"author\">M\u00e4rz M.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/350946039?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Fault Detection and Mitigation of DC\/DC Converters with Semiconductor-Based Isolation for DC-EVSEs<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">2025 IEEE Seventh International Conference on DC Microgrids (ICDCM)<\/span> (, <span itemprop=\"startDate\" content=\"2025-06-04\">4. June 2025<\/span> - <span itemprop=\"endDate\" content=\"2025-06-06\">6. June 2025<\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"name\" style=\"font-weight:bold\">2025 IEEE Seventh International Conference on DC Microgrids (ICDCM)<\/span> <span itemprop=\"datePublished\">2025<\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/ICDCM63994.2025.11144678' target='blank' itemprop=\"sameAs\">10.1109\/ICDCM63994.2025.11144678<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Faraji S.<\/span>, <span class=\"author\" itemprop=\"author\">Mei\u00dfner E.<\/span>, <span class=\"author\" itemprop=\"author\">Besend\u00f6rfer S.<\/span>, <span class=\"author\" itemprop=\"author\">Miersch C.<\/span>, <span class=\"author\" itemprop=\"author\">Weing\u00e4rtner R.<\/span>, <span class=\"author\" itemprop=\"author\">Beyer FC.<\/span>, <span class=\"author\" itemprop=\"author\">Friedrich J.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/341324264?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Impact of Inhomogeneous Offcut Angles of GaN Native Substrates on Lateral Current Modulation in AlGaN Barrier Layers<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_341324264\"><span itemprop=\"name\"><strong>Crystal Research and Technology<\/strong><\/span><\/span> (<span itemprop=\"datePublished\">2025<\/span>)<br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_341324264\"><span itemprop=\"issn\">ISSN: 0232-1300<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1002\/crat.202400245' target='blank' itemprop=\"sameAs\">10.1002\/crat.202400245<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Fiedler L.<\/span>, <span class=\"author\" itemprop=\"author\">Hoffmeister D.<\/span>, <span class=\"author\" itemprop=\"author\">Ma TC.<\/span>, <span class=\"author\" itemprop=\"author\">Schwarz J.<\/span>, <span class=\"author\" itemprop=\"author\">G\u00fcnther F.<\/span>, <span class=\"author\" itemprop=\"author\">Przybilla T.<\/span>, <span class=\"author\" itemprop=\"author\">Spiecker E.<\/span>, <span class=\"author\" itemprop=\"author\">Thiele S.<\/span>, <span class=\"author\" itemprop=\"author\">Dworschak D.<\/span>, <span class=\"author\" itemprop=\"author\">Mayrhofer KJ.<\/span>, <span class=\"author\" itemprop=\"author\">Hutzler A.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/351464532?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Fluoride-Induced Corrosion of Stainless Steel: A Case Study for its Application as Proton Exchange Membrane Water Electrolysis Bipolar Plate Material<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_351464532\"><span itemprop=\"name\"><strong>Chemsuschem<\/strong><\/span><\/span> (<span itemprop=\"datePublished\">2025<\/span>)<br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_351464532\"><span itemprop=\"issn\">ISSN: 1864-5631<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1002\/cssc.202501561' target='blank' itemprop=\"sameAs\">10.1002\/cssc.202501561<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Geu\u00df M.<\/span>, <span class=\"author\" itemprop=\"author\">L\u00f6ttert L.<\/span>, <span class=\"author\" itemprop=\"author\">Hutzler A.<\/span>, <span class=\"author\" itemprop=\"author\">Schwarz J.<\/span>, <span class=\"author\" itemprop=\"author\">Nov\u00e1kov\u00e1 J.<\/span>, <span class=\"author\" itemprop=\"author\">Khalakhan I.<\/span>, <span class=\"author\" itemprop=\"author\">Gaber\u0161\u010dek M.<\/span>, <span class=\"author\" itemprop=\"author\">Mayrhofer KJ.<\/span>, <span class=\"author\" itemprop=\"author\">Thiele S.<\/span>, <span class=\"author\" itemprop=\"author\">Cherevko S.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/341309341?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Platinum interlayers reduce charge transport barriers between amorphous Ir-oxide OER electrocatalysts and the porous transport layer<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_341309341\"><span itemprop=\"name\"><strong>Chemical Engineering Journal<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_341309341\" \/><span itemprop=\"volumeNumber\">514<\/span><\/span>  (<span itemprop=\"datePublished\">2025<\/span>), Article No.: <span itemprop=\"pagination\">162887<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_341309341\"><span itemprop=\"issn\">ISSN: 1385-8947<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.cej.2025.162887' target='blank' itemprop=\"sameAs\">10.1016\/j.cej.2025.162887<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Hack M.<\/span>, <span class=\"author\" itemprop=\"author\">Korner R.<\/span>, <span class=\"author\" itemprop=\"author\">Schwarz D.<\/span>, <span class=\"author\" itemprop=\"author\">Daus A.<\/span>, <span class=\"author\" itemprop=\"author\">Schulze J.<\/span>, <span class=\"author\" itemprop=\"author\">Oehme M.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/348148073?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Quantum efficiency scaling by cascaded Ge multi-stage tunnel junctions<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_348148073\"><span itemprop=\"name\"><strong>Journal of Lightwave Technology<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_348148073\" \/><span itemprop=\"volumeNumber\">43<\/span><\/span>  (<span itemprop=\"datePublished\">2025<\/span>), p. <span itemprop=\"pagination\">8825-8831<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_348148073\"><span itemprop=\"issn\">ISSN: 0733-8724<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/JLT.2025.3589018' target='blank' itemprop=\"sameAs\">10.1109\/JLT.2025.3589018<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Hack M.<\/span>, <span class=\"author\" itemprop=\"author\">Seidel L.<\/span>, <span class=\"author\" itemprop=\"author\">Wanitzek M.<\/span>, <span class=\"author\" itemprop=\"author\">Oehme M.<\/span>, <span class=\"author\" itemprop=\"author\">Daus A.<\/span>, <span class=\"author\" itemprop=\"author\">Schulze J.<\/span>, <span class=\"author\" itemprop=\"author\">Schwarz D.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/338857563?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Determination of the scattering length (\u0393 \u2192 L) by the electrically pumped Germanium Zener Emitter<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_338857563\"><span itemprop=\"name\"><strong>IEEE Photonics Technology Letters<\/strong><\/span><\/span> (<span itemprop=\"datePublished\">2025<\/span>)<br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_338857563\"><span itemprop=\"issn\">ISSN: 1041-1135<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/LPT.2025.3549829' target='blank' itemprop=\"sameAs\">10.1109\/LPT.2025.3549829<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Hartmann A.<\/span>, <span class=\"author\" itemprop=\"author\">Boettcher N.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/351466252?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">A Novel Design Variation of a Monolithically Integrated SiC Circuit Breaker<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">48th MIPRO ICT and Electronics Convention, MIPRO 2025<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Opatija<\/span><\/span>, <span itemprop=\"startDate\" content=\"2025-06-02\">2. June 2025<\/span> - <span itemprop=\"endDate\" content=\"2025-06-06\">6. June 2025<\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"author\">Snjezana Babic, Zeljka Car, Marina Cicin-Sain, Pavle Ergovic, Tihana Galina Grbac, Vera Gradisnik, Stjepan Gros, Alan Jovic, Darko Jurekovic, Tihomir Katulic, Marko Koricic, Vedran Mornar, Juraj Petrovic, Karolj Skala, Dejan Skvorc, Vlado Sruk, Edvard Tijan, Joe S. Valacich, Neven Vrcek, Boris Vrdoljak (ed.): <\/span><span itemprop=\"name\" style=\"font-weight:bold\">2025 MIPRO 48th ICT and Electronics Convention, MIPRO 2025 - Proceedings<\/span> <span itemprop=\"datePublished\">2025<\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/MIPRO65660.2025.11131705' target='blank' itemprop=\"sameAs\">10.1109\/MIPRO65660.2025.11131705<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Kammel R.<\/span>, <span class=\"author\" itemprop=\"author\">Dick J.<\/span>, <span class=\"author\" itemprop=\"author\">May A.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Schulze J.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/351464779?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">600 \u00b0C Operation of a LDMOS Integrated on a 4H-SiC CMOS Platform<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">48th MIPRO ICT and Electronics Convention, MIPRO 2025<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Opatija<\/span><\/span>, <span itemprop=\"startDate\" content=\"2025-06-02\">2. June 2025<\/span> - <span itemprop=\"endDate\" content=\"2025-06-06\">6. June 2025<\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"author\">Snjezana Babic, Zeljka Car, Marina Cicin-Sain, Pavle Ergovic, Tihana Galina Grbac, Vera Gradisnik, Stjepan Gros, Alan Jovic, Darko Jurekovic, Tihomir Katulic, Marko Koricic, Vedran Mornar, Juraj Petrovic, Karolj Skala, Dejan Skvorc, Vlado Sruk, Edvard Tijan, Joe S. Valacich, Neven Vrcek, Boris Vrdoljak (ed.): <\/span><span itemprop=\"name\" style=\"font-weight:bold\">2025 MIPRO 48th ICT and Electronics Convention, MIPRO 2025 - Proceedings<\/span> <span itemprop=\"datePublished\">2025<\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/MIPRO65660.2025.11131887' target='blank' itemprop=\"sameAs\">10.1109\/MIPRO65660.2025.11131887<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Kinstler A.<\/span>, <span class=\"author\" itemprop=\"author\">Neumann R.<\/span>, <span class=\"author\" itemprop=\"author\">Taylor AA.<\/span>, <span class=\"author\" itemprop=\"author\">Besend\u00f6rfer S.<\/span>, <span class=\"author\" itemprop=\"author\">Mei\u00dfner E.<\/span>, <span class=\"author\" itemprop=\"author\">Weing\u00e4rtner R.<\/span>, <span class=\"author\" itemprop=\"author\">Brunner F.<\/span>, <span class=\"author\" itemprop=\"author\">Brusaterra E.<\/span>, <span class=\"author\" itemprop=\"author\">Bahat Treidel E.<\/span>, <span class=\"author\" itemprop=\"author\">Schulze J.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/353529034?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Direct investigation of localized leakage currents in GaN-on-sapphire pn-diodes<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_353529034\"><span itemprop=\"name\"><strong>Scientific Reports<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_353529034\" \/><span itemprop=\"volumeNumber\">15<\/span><\/span>  (<span itemprop=\"datePublished\">2025<\/span>), Article No.: <span itemprop=\"pagination\">39578<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_353529034\"><span itemprop=\"issn\">ISSN: 2045-2322<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1038\/s41598-025-25338-0' target='blank' itemprop=\"sameAs\">10.1038\/s41598-025-25338-0<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Liu Y.<\/span>, <span class=\"author\" itemprop=\"author\">Ostermay I.<\/span>, <span class=\"author\" itemprop=\"author\">Thies A.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/359860720?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Physical modeling of side wall deposition by inclined electron beam evaporation<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_359860720\"><span itemprop=\"name\"><strong>Journal of Vacuum Science & Technology B<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_359860720\" \/><span itemprop=\"volumeNumber\">43<\/span><\/span>  (<span itemprop=\"datePublished\">2025<\/span>)<br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_359860720\"><span itemprop=\"issn\">ISSN: 2166-2746<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/\/10.1116\/6.0004846' target='blank' itemprop=\"sameAs\">\/10.1116\/6.0004846<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Medvedev V.<\/span>, <span class=\"author\" itemprop=\"author\">Erdmann A.<\/span>, <span class=\"author\" itemprop=\"author\">Rosskopf A.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/334086841?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Physics-informed deep learning for 3D modeling of light diffraction from optical metasurfaces<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_334086841\"><span itemprop=\"name\"><strong>Optics Express<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_334086841\" \/><span itemprop=\"volumeNumber\">33<\/span><\/span>  (<span itemprop=\"datePublished\">2025<\/span>), p. <span itemprop=\"pagination\">1371-1384<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_334086841\"><span itemprop=\"issn\">ISSN: 1094-4087<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1364\/OE.544116' target='blank' itemprop=\"sameAs\">10.1364\/OE.544116<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Meindl M.<\/span>, <span class=\"author\" itemprop=\"author\">Forster F.<\/span>, <span class=\"author\" itemprop=\"author\">Eckardt B.<\/span>, <span class=\"author\" itemprop=\"author\">M\u00e4rz M.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/354595378?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Fuel Cell systems in hybrid-electric aircraft<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">European Electrolyser & Fuel Cell Forum (EFCF)<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Luzern<\/span><\/span><span itemprop=\"startDate\" content=\"2025\"><\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"name\" style=\"font-weight:bold\">European Electrolyser & Fuel Cell Forum (EFCF)<\/span> <span itemprop=\"datePublished\">2025<\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.5281\/zenodo.17476245' target='blank' itemprop=\"sameAs\">10.5281\/zenodo.17476245<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Schmied N.<\/span>, <span class=\"author\" itemprop=\"author\">Kerscher M.<\/span>, <span class=\"author\" itemprop=\"author\">Matlok S.<\/span>, <span class=\"author\" itemprop=\"author\">Eckardt B.<\/span>, <span class=\"author\" itemprop=\"author\">M\u00e4rz M.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/354509215?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Enhanced Efficiency and Power Density in Next-Gen Power Electronics Through Zero Overvoltage Switching<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">2025 Energy Conversion Congress & Expo Europe (ECCE Europe)<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Birmingham<\/span><\/span>, <span itemprop=\"startDate\" content=\"2025-09-01\">1. September 2025<\/span> - <span itemprop=\"endDate\" content=\"2025-09-04\">4. September 2025<\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"name\" style=\"font-weight:bold\">2025 Energy Conversion Congress & Expo Europe (ECCE Europe)<\/span>, <span itemprop=\"publisher\" itemscope itemtype=\"http:\/\/schema.org\/Organization\"><span class=\"city\" itemprop=\"address\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"addressLocality\">New York City<\/span><\/span>: <\/span> <span itemprop=\"datePublished\">2025<\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/ECCE-Europe62795.2025.11238816' target='blank' itemprop=\"sameAs\">10.1109\/ECCE-Europe62795.2025.11238816<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Schwanninger R.<\/span>, <span class=\"author\" itemprop=\"author\">St\u00f6cklein N.<\/span>, <span class=\"author\" itemprop=\"author\">Weitz N.<\/span>, <span class=\"author\" itemprop=\"author\">Yang X.<\/span>, <span class=\"author\" itemprop=\"author\">M\u00e4rz M.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/350951052?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">A Path to Configurable Solid State Transformers and Energy Routers: The Modular Multi-Active Bridge<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/> (<span itemprop=\"datePublished\">2025<\/span>)<\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.36227\/techrxiv.175242752.26514109\/v1' target='blank' itemprop=\"sameAs\">10.36227\/techrxiv.175242752.26514109\/v1<\/a><br \/>(online publication)<\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Schwarz J.<\/span>, <span class=\"author\" itemprop=\"author\">Dick J.<\/span>, <span class=\"author\" itemprop=\"author\">Beuer S.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Hutzler A.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/348150906?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Modeling the partially detected backside reflectance of transparent substrates in reflectance microspectroscopy<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_348150906\"><span itemprop=\"name\"><strong>Micron<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_348150906\" \/><span itemprop=\"volumeNumber\">198<\/span><\/span>  (<span itemprop=\"datePublished\">2025<\/span>), p. <span itemprop=\"pagination\">103878<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_348150906\"><span itemprop=\"issn\">ISSN: 0968-4328<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.micron.2025.103878' target='blank' itemprop=\"sameAs\">10.1016\/j.micron.2025.103878<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Schwarz J.<\/span>, <span class=\"author\" itemprop=\"author\">Niebauer M.<\/span>, <span class=\"author\" itemprop=\"author\">R\u00f6mling L.<\/span>, <span class=\"author\" itemprop=\"author\">Pham A.<\/span>, <span class=\"author\" itemprop=\"author\">Kolesnik-Gray M.<\/span>, <span class=\"author\" itemprop=\"author\">Evanschitzky P.<\/span>, <span class=\"author\" itemprop=\"author\">Vogel N.<\/span>, <span class=\"author\" itemprop=\"author\">Krstic V.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Hutzler A.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/334412772?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Spectro-Spatial Unmixing in Optical Microspectroscopy for Thickness Determination of Layered Materials<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_334412772\"><span itemprop=\"name\"><strong>Advanced Optical Materials<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_334412772\" \/><span itemprop=\"volumeNumber\">13<\/span><\/span>  (<span itemprop=\"datePublished\">2025<\/span>), Article No.: <span itemprop=\"pagination\">2402502<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_334412772\"><span itemprop=\"issn\">ISSN: 2195-1071<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1002\/adom.202402502' target='blank' itemprop=\"sameAs\">10.1002\/adom.202402502<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Schwemmer B.<\/span>, <span class=\"author\" itemprop=\"author\">Dick J.<\/span>, <span class=\"author\" itemprop=\"author\">May A.<\/span>, <span class=\"author\" itemprop=\"author\">Schulze J.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/351465770?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Empirical Modelling of Tunneling Processes in 4H-SiC Gated Pin-Diodes<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">48th MIPRO ICT and Electronics Convention, MIPRO 2025<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Opatija<\/span><\/span>, <span itemprop=\"startDate\" content=\"2025-06-02\">2. June 2025<\/span> - <span itemprop=\"endDate\" content=\"2025-06-06\">6. June 2025<\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"author\">Snjezana Babic, Zeljka Car, Marina Cicin-Sain, Pavle Ergovic, Tihana Galina Grbac, Vera Gradisnik, Stjepan Gros, Alan Jovic, Darko Jurekovic, Tihomir Katulic, Marko Koricic, Vedran Mornar, Juraj Petrovic, Karolj Skala, Dejan Skvorc, Vlado Sruk, Edvard Tijan, Joe S. Valacich, Neven Vrcek, Boris Vrdoljak (ed.): <\/span><span itemprop=\"name\" style=\"font-weight:bold\">2025 MIPRO 48th ICT and Electronics Convention, MIPRO 2025 - Proceedings<\/span> <span itemprop=\"datePublished\">2025<\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/MIPRO65660.2025.11131817' target='blank' itemprop=\"sameAs\">10.1109\/MIPRO65660.2025.11131817<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Seidenath M.<\/span>, <span class=\"author\" itemprop=\"author\">M\u00e4rz M.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/350947228?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Modeling the Tripping Behavior of Fuses Based on Data Sheet Characteristics and Conductor Material Properties<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_350947228\"><span itemprop=\"name\"><strong>Electricity<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_350947228\" \/><span itemprop=\"volumeNumber\">6<\/span><\/span>  (<span itemprop=\"datePublished\">2025<\/span>), p. <span itemprop=\"pagination\">47<\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.3390\/electricity6030047' target='blank' itemprop=\"sameAs\">10.3390\/electricity6030047<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Ultsch S.<\/span>, <span class=\"author\" itemprop=\"author\">Dick J.<\/span>, <span class=\"author\" itemprop=\"author\">Schwarz J.<\/span>, <span class=\"author\" itemprop=\"author\">Schulze J.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/351462309?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Electroluminescent Behavior of Defects in 4H-SiC Light Emitting Diodes<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">48th MIPRO ICT and Electronics Convention, MIPRO 2025<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Opatija<\/span><\/span>, <span itemprop=\"startDate\" content=\"2025-06-02\">2. June 2025<\/span> - <span itemprop=\"endDate\" content=\"2025-06-06\">6. June 2025<\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"author\">Snjezana Babic, Zeljka Car, Marina Cicin-Sain, Pavle Ergovic, Tihana Galina Grbac, Vera Gradisnik, Stjepan Gros, Alan Jovic, Darko Jurekovic, Tihomir Katulic, Marko Koricic, Vedran Mornar, Juraj Petrovic, Karolj Skala, Dejan Skvorc, Vlado Sruk, Edvard Tijan, Joe S. Valacich, Neven Vrcek, Boris Vrdoljak (ed.): <\/span><span itemprop=\"name\" style=\"font-weight:bold\">2025 MIPRO 48th ICT and Electronics Convention<\/span> <span itemprop=\"datePublished\">2025<\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/MIPRO65660.2025.11132079' target='blank' itemprop=\"sameAs\">10.1109\/MIPRO65660.2025.11132079<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Wimmer J.<\/span>, <span class=\"author\" itemprop=\"author\">Dick J.<\/span>, <span class=\"author\" itemprop=\"author\">Schulze J.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/351463295?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Fabrication and Electrical Characterization of Pure Boron on 4H-SiC Junctions<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">48th MIPRO ICT and Electronics Convention, MIPRO 2025<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Opatija<\/span><\/span>, <span itemprop=\"startDate\" content=\"2025-06-02\">2. June 2025<\/span> - <span itemprop=\"endDate\" content=\"2025-06-06\">6. June 2025<\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"author\">Snjezana Babic, Zeljka Car, Marina Cicin-Sain, Pavle Ergovic, Tihana Galina Grbac, Vera Gradisnik, Stjepan Gros, Alan Jovic, Darko Jurekovic, Tihomir Katulic, Marko Koricic, Vedran Mornar, Juraj Petrovic, Karolj Skala, Dejan Skvorc, Vlado Sruk, Edvard Tijan, Joe S. Valacich, Neven Vrcek, Boris Vrdoljak (ed.): <\/span><span itemprop=\"name\" style=\"font-weight:bold\">2025 MIPRO 48th ICT and Electronics Convention<\/span> <span itemprop=\"datePublished\">2025<\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/MIPRO65660.2025.11132043' target='blank' itemprop=\"sameAs\">10.1109\/MIPRO65660.2025.11132043<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Wostatek T.<\/span>, <span class=\"author\" itemprop=\"author\">Civas EN.<\/span>, <span class=\"author\" itemprop=\"author\">Zheng J.<\/span>, <span class=\"author\" itemprop=\"author\">Chirala VYMR.<\/span>, <span class=\"author\" itemprop=\"author\">Schimmel S.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/338518041?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Emerging research directions in the field of nitride semiconductors<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">13th annual meeting of the young crystal growers (jDGKK)<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Frankfurt am Main<\/span><\/span>, <span itemprop=\"startDate\" content=\"2025-03-04\">4. March 2025<\/span>)<\/span><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Wostatek T.<\/span>, <span class=\"author\" itemprop=\"author\">Zenk M.<\/span>, <span class=\"author\" itemprop=\"author\">Friedrich J.<\/span>, <span class=\"author\" itemprop=\"author\">Schimmel S.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/351427178?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Numerical and experimental analysis of ammonothermal crystal growth configurations and their impact on the temperature field along the autoclave wall<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">International Conference on Nitride Semiconductors - ICNS-15<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Malm\u00f6<\/span><\/span>, <span itemprop=\"startDate\" content=\"2025-07-06\">6. July 2025<\/span> - <span itemprop=\"endDate\" content=\"2025-07-11\">11. July 2025<\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"author\">MIKON (ed.): <\/span><span itemprop=\"name\" style=\"font-weight:bold\">ABSTRACT BOOKLET ICNS 15<\/span> <span itemprop=\"datePublished\">2025<\/span><\/span><br \/>Open Access: <a href='https:\/\/files.mkon.nu\/fmfiles\/file\/Abstractbook_ICNS15_020725_updated-1.pdf' target='blank' itemprop=\"sameAs\">https:\/\/files.mkon.nu\/fmfiles\/file\/Abstractbook_ICNS15_020725_updated-1.pdf<\/a><\/li><\/ul><h3>2024<\/h3><ul class=\"cris-publications \" lang=\"en\"><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Awad A.<\/span>, <span class=\"author\" itemprop=\"author\">Behroozi C.<\/span>, <span class=\"author\" itemprop=\"author\">Erdmann A.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/334426090?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Integrated Mask Process Modeling for Better Yield Predictions<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">Photomask Technology 2024<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Monterey, CA<\/span><\/span>, <span itemprop=\"startDate\" content=\"2024-09-30\">30. September 2024<\/span> - <span itemprop=\"endDate\" content=\"2024-10-03\">3. October 2024<\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"author\">Seong-Sue Kim, Lawrence S. Melvin (ed.): <\/span><span itemprop=\"name\" style=\"font-weight:bold\">Proceedings of SPIE - The International Society for Optical Engineering<\/span> <span itemprop=\"datePublished\">2024<\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1117\/12.3035191' target='blank' itemprop=\"sameAs\">10.1117\/12.3035191<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\">Guiot E., Allibert F., Leib J., Becker T., Drouin A., Schwarzenbach W.:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/322742794?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">SiC engineered substrate: increasing SiC MOSFETs current density from device to module level<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">39th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2024<\/span><span itemprop=\"startDate\" content=\"2024\"><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/APEC48139.2024.10509052' target='blank' itemprop=\"sameAs\">10.1109\/APEC48139.2024.10509052<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Boettcher N.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/334457619?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Analytical Modelling of the Quasi-Static Operation of a Monolithically Integrated 4H-SiC Circuit Breaker Device<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_334457619\"><span itemprop=\"name\"><strong>Solid State Phenomena<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_334457619\" \/><span itemprop=\"volumeNumber\">360<\/span><\/span>  (<span itemprop=\"datePublished\">2024<\/span>), p. <span itemprop=\"pagination\">111-118<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_334457619\"><span itemprop=\"issn\">ISSN: 1012-0394<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4028\/p-EkvC4B' target='blank' itemprop=\"sameAs\">10.4028\/p-EkvC4B<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">B\u00f6ttcher N.<\/span>, <span class=\"author\" itemprop=\"author\">Kauth J.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">May A.<\/span>, <span class=\"author\" itemprop=\"author\">Baier L.<\/span>, <span class=\"author\" itemprop=\"author\">Jank M.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/361488724?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Investigation of Ohmic Contacts and Resistances of a 4H-SiC CMOS Technology up to 550\u25e6C<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_361488724\"><span itemprop=\"name\"><strong>Journal of Microelectronics and Electronic Packaging<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_361488724\" \/><span itemprop=\"volumeNumber\">21<\/span><\/span>  (<span itemprop=\"datePublished\">2024<\/span>), p. <span itemprop=\"pagination\">73-79<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_361488724\"><span itemprop=\"issn\">ISSN: 1551-4897<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4071\/001c.127390' target='blank' itemprop=\"sameAs\">10.4071\/001c.127390<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">B\u00f6ttcher N.<\/span>, <span class=\"author\" itemprop=\"author\">Sakai K.<\/span>, <span class=\"author\" itemprop=\"author\">Szabo M.<\/span>, <span class=\"author\" itemprop=\"author\">Beuer S.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/361490184?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Fast Estimation of the Lateral Fidelity of Ion Implantation in 4H-SiC through Calibration to JFET Transfer Characteristics in TCAD<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_361490184\"><span itemprop=\"name\"><strong>Solid State Phenomena<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_361490184\" \/><span itemprop=\"volumeNumber\">358<\/span><\/span>  (<span itemprop=\"datePublished\">2024<\/span>), p. <span itemprop=\"pagination\">133-140<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_361490184\"><span itemprop=\"issn\">ISSN: 1012-0394<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4028\/p-4Rj3jY' target='blank' itemprop=\"sameAs\">10.4028\/p-4Rj3jY<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Chirala VYMR.<\/span>, <span class=\"author\" itemprop=\"author\">Schimmel S.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/338519273?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Fundamentals of ammonothermal growth of nitride crystals<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">12th Annual jDGKK Meeting<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Erlangen<\/span><\/span>, <span itemprop=\"startDate\" content=\"2024-03-05\">5. March 2024<\/span> - <span itemprop=\"endDate\" content=\"2025-03-05\">5. March 2025<\/span>)<\/span><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Cornigli D.<\/span>, <span class=\"author\" itemprop=\"author\">Schlichting H.<\/span>, <span class=\"author\" itemprop=\"author\">Becker T.<\/span>, <span class=\"author\" itemprop=\"author\">Larcher L.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>, <span class=\"author\" itemprop=\"author\">Pe\u0161i\u0107 M.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/327921350?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Modelling-Augmented Failure Diagnostics in Planar SiC MOS Devices Using TDDB Measurements<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_327921350\"><span itemprop=\"name\"><strong>Solid State Phenomena<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_327921350\" \/><span itemprop=\"volumeNumber\">361<\/span><\/span>  (<span itemprop=\"datePublished\">2024<\/span>), p. <span itemprop=\"pagination\">93-98<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_327921350\"><span itemprop=\"issn\">ISSN: 1012-0394<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4028\/p-jbV5Vq' target='blank' itemprop=\"sameAs\">10.4028\/p-jbV5Vq<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/Thesis\"><span class=\"author\" itemprop=\"author\">Ghazal R.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/326504225?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Analyse und Modellierung mikrospektrometrischer Messungen an D\u00fcnnschichtsystemen unter Einsatz von Polarisationsoptiken<\/a><\/strong><\/span> (Master thesis, <span itemprop=\"datePublished\">2024<\/span>)<\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Hack M.<\/span>, <span class=\"author\" itemprop=\"author\">Kugler B.<\/span>, <span class=\"author\" itemprop=\"author\">Wanitzek M.<\/span>, <span class=\"author\" itemprop=\"author\">Vijayan P.<\/span>, <span class=\"author\" itemprop=\"author\">Schulze J.<\/span>, <span class=\"author\" itemprop=\"author\">Oehme M.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/330643470?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">In situ, non-invasive novel measurement method for the determination of integrated waveguide losses<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">Metamaterials, Metadevices, and Metasystems 2024<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">San Diego, CA<\/span><\/span>, <span itemprop=\"startDate\" content=\"2024-08-18\">18. August 2024<\/span> - <span itemprop=\"endDate\" content=\"2024-08-22\">22. August 2024<\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"author\">Nader Engheta, Mikhail A. Noginov, Nikolay I. Zheludev, Nikolay I. Zheludev (ed.): <\/span><span itemprop=\"name\" style=\"font-weight:bold\">Proceedings of SPIE - The International Society for Optical Engineering<\/span> <span itemprop=\"datePublished\">2024<\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1117\/12.3028025' target='blank' itemprop=\"sameAs\">10.1117\/12.3028025<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Hack M.<\/span>, <span class=\"author\" itemprop=\"author\">Seidel L.<\/span>, <span class=\"author\" itemprop=\"author\">Wanitzek M.<\/span>, <span class=\"author\" itemprop=\"author\">Oehme M.<\/span>, <span class=\"author\" itemprop=\"author\">Schulze J.<\/span>, <span class=\"author\" itemprop=\"author\">Schwarz D.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/315950331?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Utilizing direct Zener tunneling in Germanium for cryogenic quantum applications<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_315950331\"><span itemprop=\"name\"><strong>Materials Science in Semiconductor Processing<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_315950331\" \/><span itemprop=\"volumeNumber\">172<\/span><\/span>  (<span itemprop=\"datePublished\">2024<\/span>), Article No.: <span itemprop=\"pagination\">108057<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_315950331\"><span itemprop=\"issn\">ISSN: 1369-8001<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.mssp.2023.108057' target='blank' itemprop=\"sameAs\">10.1016\/j.mssp.2023.108057<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Hoffmeister D.<\/span>, <span class=\"author\" itemprop=\"author\">Finger S.<\/span>, <span class=\"author\" itemprop=\"author\">Fiedler L.<\/span>, <span class=\"author\" itemprop=\"author\">Ma TC.<\/span>, <span class=\"author\" itemprop=\"author\">K\u00f6rner A.<\/span>, <span class=\"author\" itemprop=\"author\">Zlatar M.<\/span>, <span class=\"author\" itemprop=\"author\">Fritsch B.<\/span>, <span class=\"author\" itemprop=\"author\">Bodnar KW.<\/span>, <span class=\"author\" itemprop=\"author\">Carl S.<\/span>, <span class=\"author\" itemprop=\"author\">G\u00f6tz A.<\/span>, <span class=\"author\" itemprop=\"author\">Zubiri BA.<\/span>, <span class=\"author\" itemprop=\"author\">Will J.<\/span>, <span class=\"author\" itemprop=\"author\">Spiecker E.<\/span>, <span class=\"author\" itemprop=\"author\">Cherevko S.<\/span>, <span class=\"author\" itemprop=\"author\">Freiberg A.<\/span>, <span class=\"author\" itemprop=\"author\">Mayrhofer K.<\/span>, <span class=\"author\" itemprop=\"author\">Thiele S.<\/span>, <span class=\"author\" itemprop=\"author\">Hutzler A.<\/span>, <span class=\"author\" itemprop=\"author\">van Pham C.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/324537370?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Photodeposition-Based Synthesis of TiO2@IrOx Core\u2013Shell Catalyst for Proton Exchange Membrane Water Electrolysis with Low Iridium Loading<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_324537370\"><span itemprop=\"name\"><strong>Advanced Science<\/strong><\/span><\/span> (<span itemprop=\"datePublished\">2024<\/span>)<br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_324537370\"><span itemprop=\"issn\">ISSN: 2198-3844<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1002\/advs.202402991' target='blank' itemprop=\"sameAs\">10.1002\/advs.202402991<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Joch D.<\/span>, <span class=\"author\" itemprop=\"author\">Lang T.<\/span>, <span class=\"author\" itemprop=\"author\">Sanctis S.<\/span>, <span class=\"author\" itemprop=\"author\">Jank M.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/327056294?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Simulation-Guided Analysis towards Trench Depth Optimization for Enhanced Flexibility in Stretch-Free, Shape-Induced Interconnects for Flexible Electronics<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_327056294\"><span itemprop=\"name\"><strong>Materials<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_327056294\" \/><span itemprop=\"volumeNumber\">17<\/span><\/span>  (<span itemprop=\"datePublished\">2024<\/span>), Article No.: <span itemprop=\"pagination\">3849<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_327056294\"><span itemprop=\"issn\">ISSN: 1996-1944<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.3390\/ma17153849' target='blank' itemprop=\"sameAs\">10.3390\/ma17153849<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Joch D.<\/span>, <span class=\"author\" itemprop=\"author\">Lehninger D.<\/span>, <span class=\"author\" itemprop=\"author\">Sunil A.<\/span>, <span class=\"author\" itemprop=\"author\">Sanctis S.<\/span>, <span class=\"author\" itemprop=\"author\">Lang T.<\/span>, <span class=\"author\" itemprop=\"author\">Zeltner J.<\/span>, <span class=\"author\" itemprop=\"author\">Wartenberg P.<\/span>, <span class=\"author\" itemprop=\"author\">Seidel K.<\/span>, <span class=\"author\" itemprop=\"author\">Jank M.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/328232973?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Precise Compensation of Device Variability in IGZO-based Ferroelectric ThinFilm Transistors for Enhanced Transparent Display Performance<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">International Symposium, Seminar, and Exhibition, Display Week 2024<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">San Jose, CA, USA<\/span><\/span>, <span itemprop=\"startDate\" content=\"2024-05-12\">12. May 2024<\/span> - <span itemprop=\"endDate\" content=\"2024-05-17\">17. May 2024<\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"name\" style=\"font-weight:bold\">Digest of Technical Papers - SID International Symposium<\/span> <span itemprop=\"datePublished\">2024<\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1002\/sdtp.17463' target='blank' itemprop=\"sameAs\">10.1002\/sdtp.17463<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Ley M.<\/span>, <span class=\"author\" itemprop=\"author\">Dick J.<\/span>, <span class=\"author\" itemprop=\"author\">Schulze J.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/325740804?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Ab Initio Calculations to Determine Tunneling Parameters for 4H-SiC Tunneling Field-Effect Transistor Simulations<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">47th ICT and Electronics Convention, MIPRO 2024<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Opatija, HRV<\/span><\/span>, <span itemprop=\"startDate\" content=\"2024-05-20\">20. May 2024<\/span> - <span itemprop=\"endDate\" content=\"2024-05-24\">24. May 2024<\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"author\">Snjezana Babic, Zeljka Car, Marina Cicin-Sain, Dragan Cisic, Pavle Ergovic, Tihana Galinac Grbac, Vera Gradisnik, Stjepan Gros, Andrej Jokic, Alan Jovic, Darko Jurekovic, Tihomir Katulic, Marko Koricic, Vedran Mornar, Juraj Petrovic, Karolj Skala, Dejan Skvorc, Vlado Sruk, Marko Svaco, Edvard Tijan, Neven Vrcek, Boris Vrdoljak (ed.): <\/span><span itemprop=\"name\" style=\"font-weight:bold\">2024 47th ICT and Electronics Convention, MIPRO 2024 - Proceedings<\/span> <span itemprop=\"datePublished\">2024<\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/MIPRO60963.2024.10569785' target='blank' itemprop=\"sameAs\">10.1109\/MIPRO60963.2024.10569785<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">May A.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Baier L.<\/span>, <span class=\"author\" itemprop=\"author\">Schraml M.<\/span>, <span class=\"author\" itemprop=\"author\">Dick J.<\/span>, <span class=\"author\" itemprop=\"author\">Jank M.<\/span>, <span class=\"author\" itemprop=\"author\">Schulze J.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/334438109?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">A 4H-SiC CMOS Technology enabling Smart Sensor Integration and Circuit Operation above 500 \u00b0C<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">2024 Smart Systems Integration Conference and Exhibition, SSI 2024<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Hamburg<\/span><\/span>, <span itemprop=\"startDate\" content=\"2024-04-16\">16. April 2024<\/span> - <span itemprop=\"endDate\" content=\"2024-04-18\">18. April 2024<\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"name\" style=\"font-weight:bold\">2024 Smart Systems Integration Conference and Exhibition, SSI 2024<\/span> <span itemprop=\"datePublished\">2024<\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/SSI63222.2024.10740550' target='blank' itemprop=\"sameAs\">10.1109\/SSI63222.2024.10740550<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Okeil H.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>, <span class=\"author\" itemprop=\"author\">Wachutka G.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/327069943?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Very High Temperature Hall Sensors in a Wafer-Scale 4H-SiC Technology<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_327069943\"><span itemprop=\"name\"><strong>Advanced Materials Technologies<\/strong><\/span><\/span> (<span itemprop=\"datePublished\">2024<\/span>)<br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_327069943\"><span itemprop=\"issn\">ISSN: 2365-709X<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1002\/admt.202400046' target='blank' itemprop=\"sameAs\">10.1002\/admt.202400046<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Popp L.<\/span>, <span class=\"author\" itemprop=\"author\">Kampe P.<\/span>, <span class=\"author\" itemprop=\"author\">Fritsch B.<\/span>, <span class=\"author\" itemprop=\"author\">Hutzler A.<\/span>, <span class=\"author\" itemprop=\"author\">Poller MJ.<\/span>, <span class=\"author\" itemprop=\"author\">Albert J.<\/span>, <span class=\"author\" itemprop=\"author\">Sch\u00fchle P.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/324536632?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Supported Ruthenium Phosphide as a Promising Catalyst for Selective Hydrogenation of Sugars<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_324536632\"><span itemprop=\"name\"><strong>European Journal of Inorganic Chemistry<\/strong><\/span><\/span> (<span itemprop=\"datePublished\">2024<\/span>)<br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_324536632\"><span itemprop=\"issn\">ISSN: 1434-1948<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1002\/ejic.202400117' target='blank' itemprop=\"sameAs\">10.1002\/ejic.202400117<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Rusch O.<\/span>, <span class=\"author\" itemprop=\"author\">Brueckner K.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/334458606?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Increasing 4H-SiC Trench Depth by Improving the Dry Etch Selectivity towards the Oxide Hard Mask<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4028\/p-1PoMgV' target='blank' itemprop=\"sameAs\">10.4028\/p-1PoMgV<\/a><\/span><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Scheller D.<\/span>, <span class=\"author\" itemprop=\"author\">Hrunski F.<\/span>, <span class=\"author\" itemprop=\"author\">Schwarberg J.<\/span>, <span class=\"author\" itemprop=\"author\">Knolle W.<\/span>, <span class=\"author\" itemprop=\"author\">Soykal \u00d6O.<\/span>, <span class=\"author\" itemprop=\"author\">Udvarhelyi P.<\/span>, <span class=\"author\" itemprop=\"author\">Narang P.<\/span>, <span class=\"author\" itemprop=\"author\">Weber HB.<\/span>, <span class=\"author\" itemprop=\"author\">Hollendonner M.<\/span>, <span class=\"author\" itemprop=\"author\">Nagy R.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/333115962?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Quantum enhanced electric field mapping within semiconductor devices<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_333115962\"><span itemprop=\"name\"><strong>Physical Review Applied<\/strong><\/span><\/span> (<span itemprop=\"datePublished\">2024<\/span>)<br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_333115962\"><span itemprop=\"issn\">ISSN: 2331-7019<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1103\/pv13-vgcw' target='blank' itemprop=\"sameAs\">10.1103\/pv13-vgcw<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Schimmel S.<\/span>, <span class=\"author\" itemprop=\"author\">Tomida D.<\/span>, <span class=\"author\" itemprop=\"author\">Ishiguro T.<\/span>, <span class=\"author\" itemprop=\"author\">Honda Y.<\/span>, <span class=\"author\" itemprop=\"author\">Chichibu SF.<\/span>, <span class=\"author\" itemprop=\"author\">Amano H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/324352421?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Transition from etch-back to growth conditions during ammonothermal growth of GaN \u2013 a transient numerical model for convective flow and temperature distribution in a retrograde solubility configuration<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">GaN Marathon<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Verona<\/span><\/span>, <span itemprop=\"startDate\" content=\"2024-06-09\">9. June 2024<\/span> - <span itemprop=\"endDate\" content=\"2024-06-12\">12. June 2024<\/span>)<\/span><\/li><li itemscope itemtype=\"http:\/\/schema.org\/Thesis\"><span class=\"author\" itemprop=\"author\">Schmid F.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/359021435?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Entwicklung und Optimierung eines Ball-Wedge-Wirebond-Prozesses f\u00fcr kleine Kontaktpads<\/a><\/strong><\/span> (Bachelor thesis, <span itemprop=\"datePublished\">2024<\/span>)<\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Schraml M.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Papathanasiou N.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/329420927?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Device Modeling of 4H-SiC PIN Photodiodes with Shallow Implanted Al Emitters for VUV Sensor Applications<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_329420927\"><span itemprop=\"name\"><strong>Key Engineering Materials<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_329420927\" \/><span itemprop=\"volumeNumber\">984<\/span><\/span>  (<span itemprop=\"datePublished\">2024<\/span>), p. <span itemprop=\"pagination\">55-62<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_329420927\"><span itemprop=\"issn\">ISSN: 1013-9826<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4028\/p-T0xLa9' target='blank' itemprop=\"sameAs\">10.4028\/p-T0xLa9<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Schwarberg J.<\/span>, <span class=\"author\" itemprop=\"author\">Karhu R.<\/span>, <span class=\"author\" itemprop=\"author\">Kallinger B.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Schmidt R.<\/span>, <span class=\"author\" itemprop=\"author\">Schulze J.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/325740560?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Investigation of CMOS Single Process Steps on 4H-SiC a-Plane Wafers for Quantum Applications<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">47th ICT and Electronics Convention, MIPRO 2024<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Opatija<\/span><\/span>, <span itemprop=\"startDate\" content=\"2024-05-20\">20. May 2024<\/span> - <span itemprop=\"endDate\" content=\"2024-05-24\">24. May 2024<\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"author\">Snjezana Babic, Zeljka Car, Marina Cicin-Sain, Dragan Cisic, Pavle Ergovic, Tihana Galinac Grbac, Vera Gradisnik, Stjepan Gros, Andrej Jokic, Alan Jovic, Darko Jurekovic, Tihomir Katulic, Marko Koricic, Vedran Mornar, Juraj Petrovic, Karolj Skala, Dejan Skvorc, Vlado Sruk, Marko Svaco, Edvard Tijan, Neven Vrcek, Boris Vrdoljak (ed.): <\/span><span itemprop=\"name\" style=\"font-weight:bold\">2024 47th ICT and Electronics Convention, MIPRO 2024 - Proceedings<\/span> <span itemprop=\"datePublished\">2024<\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/MIPRO60963.2024.10569589' target='blank' itemprop=\"sameAs\">10.1109\/MIPRO60963.2024.10569589<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Seidel L.<\/span>, <span class=\"author\" itemprop=\"author\">Liu T.<\/span>, <span class=\"author\" itemprop=\"author\">Concepcion O.<\/span>, <span class=\"author\" itemprop=\"author\">Spirito D.<\/span>, <span class=\"author\" itemprop=\"author\">Benkhelifa A.<\/span>, <span class=\"author\" itemprop=\"author\">Kiyek V.<\/span>, <span class=\"author\" itemprop=\"author\">Schulze J.<\/span>, <span class=\"author\" itemprop=\"author\">Marzban B.<\/span>, <span class=\"author\" itemprop=\"author\">Capellini G.<\/span>, <span class=\"author\" itemprop=\"author\">Witzens J.<\/span>, <span class=\"author\" itemprop=\"author\">Gr\u00fctzmacher D.<\/span>, <span class=\"author\" itemprop=\"author\">Buca D.<\/span>, <span class=\"author\" itemprop=\"author\">Oehme M.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/330643225?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Pulse tunable SiGeSn\/GeSn multi-quantum-well microdisk lasers<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">Metamaterials, Metadevices, and Metasystems 2024<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">San Diego, CA, USA<\/span><\/span>, <span itemprop=\"startDate\" content=\"2024-08-18\">18. August 2024<\/span> - <span itemprop=\"endDate\" content=\"2024-08-22\">22. August 2024<\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"author\">Nader Engheta, Mikhail A. Noginov, Nikolay I. Zheludev, Nikolay I. Zheludev (ed.): <\/span><span itemprop=\"name\" style=\"font-weight:bold\">Proceedings of SPIE - The International Society for Optical Engineering<\/span> <span itemprop=\"datePublished\">2024<\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1117\/12.3028016' target='blank' itemprop=\"sameAs\">10.1117\/12.3028016<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Seidel L.<\/span>, <span class=\"author\" itemprop=\"author\">Liu T.<\/span>, <span class=\"author\" itemprop=\"author\">Concepci\u00f3n O.<\/span>, <span class=\"author\" itemprop=\"author\">Marzban B.<\/span>, <span class=\"author\" itemprop=\"author\">Kiyek V.<\/span>, <span class=\"author\" itemprop=\"author\">Spirito D.<\/span>, <span class=\"author\" itemprop=\"author\">Schwarz D.<\/span>, <span class=\"author\" itemprop=\"author\">Benkhelifa A.<\/span>, <span class=\"author\" itemprop=\"author\">Schulze J.<\/span>, <span class=\"author\" itemprop=\"author\">Ikonic Z.<\/span>, <span class=\"author\" itemprop=\"author\">Hartmann JM.<\/span>, <span class=\"author\" itemprop=\"author\">Chelnokov A.<\/span>, <span class=\"author\" itemprop=\"author\">Witzens J.<\/span>, <span class=\"author\" itemprop=\"author\">Capellini G.<\/span>, <span class=\"author\" itemprop=\"author\">Oehme M.<\/span>, <span class=\"author\" itemprop=\"author\">Gr\u00fctzmacher D.<\/span>, <span class=\"author\" itemprop=\"author\">Buca D.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/334284486?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Continuous-wave electrically pumped multi-quantum-well laser based on group-IV semiconductors<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_334284486\"><span itemprop=\"name\"><strong>Nature Communications<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_334284486\" \/><span itemprop=\"volumeNumber\">15<\/span><\/span>  (<span itemprop=\"datePublished\">2024<\/span>), Article No.: <span itemprop=\"pagination\">10502<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_334284486\"><span itemprop=\"issn\">ISSN: 2041-1723<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1038\/s41467-024-54873-z' target='blank' itemprop=\"sameAs\">10.1038\/s41467-024-54873-z<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Stolzke T.<\/span>, <span class=\"author\" itemprop=\"author\">Schwarz J.<\/span>, <span class=\"author\" itemprop=\"author\">M\u00e4rz M.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/326824361?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Simplifying Random Particle Structures within Soft Magnetic Composite Materials for the Optimization of 3D-FEM Simulations<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_326824361\"><span itemprop=\"name\"><strong>IEEE Transactions on Magnetics<\/strong><\/span><\/span> (<span itemprop=\"datePublished\">2024<\/span>), p. <span itemprop=\"pagination\">1-1<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_326824361\"><span itemprop=\"issn\">ISSN: 0018-9464<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/TMAG.2024.3434611' target='blank' itemprop=\"sameAs\">10.1109\/TMAG.2024.3434611<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Sun J.<\/span>, <span class=\"author\" itemprop=\"author\">Fritsch B.<\/span>, <span class=\"author\" itemprop=\"author\">K\u00f6rner A.<\/span>, <span class=\"author\" itemprop=\"author\">Taherkhani M.<\/span>, <span class=\"author\" itemprop=\"author\">Park C.<\/span>, <span class=\"author\" itemprop=\"author\">Wang M.<\/span>, <span class=\"author\" itemprop=\"author\">Hutzler A.<\/span>, <span class=\"author\" itemprop=\"author\">Woehl TJ.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/326824114?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Discovery of Molecular Intermediates and Nonclassical Nanoparticle Formation Mechanisms by Liquid Phase Electron Microscopy and Reaction Throughput Analysis<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_326824114\"><span itemprop=\"name\"><strong>Small Structures<\/strong><\/span><\/span> (<span itemprop=\"datePublished\">2024<\/span>)<br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_326824114\"><span itemprop=\"issn\">ISSN: 2688-4062<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1002\/sstr.202400146' target='blank' itemprop=\"sameAs\">10.1002\/sstr.202400146<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Wanitzek M.<\/span>, <span class=\"author\" itemprop=\"author\">Hack M.<\/span>, <span class=\"author\" itemprop=\"author\">Ramachandra H.<\/span>, <span class=\"author\" itemprop=\"author\">Seidel L.<\/span>, <span class=\"author\" itemprop=\"author\">Schwarz D.<\/span>, <span class=\"author\" itemprop=\"author\">Schulze J.<\/span>, <span class=\"author\" itemprop=\"author\">Oehme M.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/330642737?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Reduction of dark current in Ge-on-Si avalanche photodiodes using a double mesa structure<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">Metamaterials, Metadevices, and Metasystems 2024<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">San Diego, CA<\/span><\/span>, <span itemprop=\"startDate\" content=\"2024-08-18\">18. August 2024<\/span> - <span itemprop=\"endDate\" content=\"2024-08-22\">22. August 2024<\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"author\">Nader Engheta, Mikhail A. Noginov, Nikolay I. Zheludev, Nikolay I. Zheludev (ed.): <\/span><span itemprop=\"name\" style=\"font-weight:bold\">Proceedings of SPIE - The International Society for Optical Engineering<\/span> <span itemprop=\"datePublished\">2024<\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1117\/12.3028061' target='blank' itemprop=\"sameAs\">10.1117\/12.3028061<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Wanitzek M.<\/span>, <span class=\"author\" itemprop=\"author\">Hack M.<\/span>, <span class=\"author\" itemprop=\"author\">Schwarz D.<\/span>, <span class=\"author\" itemprop=\"author\">Schulze J.<\/span>, <span class=\"author\" itemprop=\"author\">Oehme M.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/319709747?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Low-temperature performance of GeSn-on-Si avalanche photodiodes toward single-photon detection<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_319709747\"><span itemprop=\"name\"><strong>Materials Science in Semiconductor Processing<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_319709747\" \/><span itemprop=\"volumeNumber\">176<\/span><\/span>  (<span itemprop=\"datePublished\">2024<\/span>), Article No.: <span itemprop=\"pagination\">108303<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_319709747\"><span itemprop=\"issn\">ISSN: 1369-8001<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.mssp.2024.108303' target='blank' itemprop=\"sameAs\">10.1016\/j.mssp.2024.108303<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Wanitzek M.<\/span>, <span class=\"author\" itemprop=\"author\">Schulze J.<\/span>, <span class=\"author\" itemprop=\"author\">Oehme M.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/331666380?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Ge-on-Si single-photon avalanche diode using a double mesa structure<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_331666380\"><span itemprop=\"name\"><strong>Optics Letters<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_331666380\" \/><span itemprop=\"volumeNumber\">49<\/span><\/span>  (<span itemprop=\"datePublished\">2024<\/span>), p. <span itemprop=\"pagination\">6345-6348<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_331666380\"><span itemprop=\"issn\">ISSN: 0146-9592<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1364\/OL.534436' target='blank' itemprop=\"sameAs\">10.1364\/OL.534436<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Wanitzek M.<\/span>, <span class=\"author\" itemprop=\"author\">Schwarz D.<\/span>, <span class=\"author\" itemprop=\"author\">Schulze J.<\/span>, <span class=\"author\" itemprop=\"author\">Oehme M.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/325121444?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Bandwidth enhancement in GeSn-on-Si avalanche photodiodes with a 60 GHz gain-bandwidth-product<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">2024 IEEE Silicon Photonics Conference, SiPhotonics 2024<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Tokyo, JPN<\/span><\/span>, <span itemprop=\"startDate\" content=\"2024-04-15\">15. April 2024<\/span> - <span itemprop=\"endDate\" content=\"2024-04-18\">18. April 2024<\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"name\" style=\"font-weight:bold\">IEEE International Conference on Group IV Photonics GFP<\/span> <span itemprop=\"datePublished\">2024<\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/SiPhotonics60897.2024.10543351' target='blank' itemprop=\"sameAs\">10.1109\/SiPhotonics60897.2024.10543351<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Wostatek T.<\/span>, <span class=\"author\" itemprop=\"author\">Chirala VYMR.<\/span>, <span class=\"author\" itemprop=\"author\">Stoddard N.<\/span>, <span class=\"author\" itemprop=\"author\">Civas EN.<\/span>, <span class=\"author\" itemprop=\"author\">Pimputkar S.<\/span>, <span class=\"author\" itemprop=\"author\">Schimmel S.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/324794522?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Ammonothermal Crystal Growth of Functional Nitrides for Semiconductor Devices: Status and Potential<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_324794522\"><span itemprop=\"name\"><strong>Materials<\/strong><\/span><\/span> (<span itemprop=\"datePublished\">2024<\/span>)<br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_324794522\"><span itemprop=\"issn\">ISSN: 1996-1944<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.3390\/ma17133104' target='blank' itemprop=\"sameAs\">10.3390\/ma17133104<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Wostatek T.<\/span>, <span class=\"author\" itemprop=\"author\">Schimmel S.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/324985307?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Nitride semiconductor crystal growth at FAU Erlangen-N\u00fcrnberg<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">12th annual meeting of the young crystal growers<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Erlangen<\/span><\/span>, <span itemprop=\"startDate\" content=\"2024-03-05\">5. March 2024<\/span> - <span itemprop=\"endDate\" content=\"2024-03-05\">5. March 2024<\/span>)<\/span><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Zhao D.<\/span>, <span class=\"author\" itemprop=\"author\">Letz S.<\/span>, <span class=\"author\" itemprop=\"author\">Jank M.<\/span>, <span class=\"author\" itemprop=\"author\">M\u00e4rz M.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/319051938?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Adhesion strength of ductile thin film determined by cross-sectional nanoindentation<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_319051938\"><span itemprop=\"name\"><strong>International Journal of Mechanical Sciences<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_319051938\" \/><span itemprop=\"volumeNumber\">270<\/span><\/span>  (<span itemprop=\"datePublished\">2024<\/span>), Article No.: <span itemprop=\"pagination\">109103<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_319051938\"><span itemprop=\"issn\">ISSN: 0020-7403<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.ijmecsci.2024.109103' target='blank' itemprop=\"sameAs\">10.1016\/j.ijmecsci.2024.109103<\/a><\/li><\/ul><h3>2023<\/h3><ul class=\"cris-publications \" lang=\"en\"><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Baierhofer D.<\/span>, <span class=\"author\" itemprop=\"author\">Thomas B.<\/span>, <span class=\"author\" itemprop=\"author\">Staiger F.<\/span>, <span class=\"author\" itemprop=\"author\">Marchetti B.<\/span>, <span class=\"author\" itemprop=\"author\">F\u00f6rster C.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/313479697?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Correlation of Extended Defects with Electrical Yield of SiC MOSFET Devices<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_313479697\"><span itemprop=\"name\"><strong>Defect and Diffusion Forum<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_313479697\" \/><span itemprop=\"volumeNumber\">426<\/span><\/span>  (<span itemprop=\"datePublished\">2023<\/span>), p. <span itemprop=\"pagination\">11-16<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_313479697\"><span itemprop=\"issn\">ISSN: 1012-0386<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4028\/p-i82158' target='blank' itemprop=\"sameAs\">10.4028\/p-i82158<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\">Guiot E., Allibert F., Leib J., Becker T., Erlbacher T.:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/322741566?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Improved Power Cycling Reliability through the use of SmartSiC \u2122 Engineered Substrate for Power Devices<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">2023 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2023<\/span><span itemprop=\"startDate\" content=\"2023\"><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.30420\/566091210' target='blank' itemprop=\"sameAs\">10.30420\/566091210<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/Book\">Guiot E., Allibert F., Leib J., Becker T., Schwarzenbach W., Hellinger C., Erlbacher T., Rouchier S.:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/322742169?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Proven Power Cycling Reliability of Ohmic Annealing Free SiC Power Device Through the Use of SmartSiC\u2122 Substrate<\/a><\/strong><\/span><br \/><span itemprop=\"publisher\" itemscope itemtype=\"http:\/\/schema.org\/Organization\"><span itemprop=\"name\">Trans Tech Publications Ltd<\/span><\/span>, <span itemprop=\"datePublished\">2023<\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4028\/p-777hqg' target='blank' itemprop=\"sameAs\">10.4028\/p-777hqg<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/Book\">Schlichting H., Lim M., Becker T., Kallinger B., Erlbacher T.:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/322743146?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">The Influence of Extended Defects in 4H-SiC Epitaxial Layers on Gate Oxide Performance and Reliability<\/a><\/strong><\/span><br \/><span itemprop=\"publisher\" itemscope itemtype=\"http:\/\/schema.org\/Organization\"><span itemprop=\"name\">Trans Tech Publications Ltd<\/span><\/span>, <span itemprop=\"datePublished\">2023<\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4028\/p-4i3rhf' target='blank' itemprop=\"sameAs\">10.4028\/p-4i3rhf<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Berkmann F.<\/span>, <span class=\"author\" itemprop=\"author\">Steuer O.<\/span>, <span class=\"author\" itemprop=\"author\">Ganss F.<\/span>, <span class=\"author\" itemprop=\"author\">Prucnal S.<\/span>, <span class=\"author\" itemprop=\"author\">Schwarz D.<\/span>, <span class=\"author\" itemprop=\"author\">Fischer IA.<\/span>, <span class=\"author\" itemprop=\"author\">Schulze J.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/291580111?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Sharp MIR plasmonic modes in gratings made of heavily doped pulsed laser-melted Ge1-xSnx<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_291580111\"><span itemprop=\"name\"><strong>Optical Materials Express<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_291580111\" \/><span itemprop=\"volumeNumber\">13<\/span><\/span>  (<span itemprop=\"datePublished\">2023<\/span>), p. <span itemprop=\"pagination\">752-763<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_291580111\"><span itemprop=\"issn\">ISSN: 2159-3930<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1364\/OME.479637' target='blank' itemprop=\"sameAs\">10.1364\/OME.479637<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">B\u00f6ttcher N.<\/span>, <span class=\"author\" itemprop=\"author\">Takamori T.<\/span>, <span class=\"author\" itemprop=\"author\">Wada K.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>, <span class=\"author\" itemprop=\"author\">Saito W.<\/span>, <span class=\"author\" itemprop=\"author\">Nishizawa SI.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/361489734?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Adjustable Current Limiting Function with a Monolithically Integrated SiC Circuit Breaker Device<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_361489734\"><span itemprop=\"name\"><strong>IEEE Transactions on Industry Applications<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_361489734\" \/><span itemprop=\"volumeNumber\">59<\/span><\/span>  (<span itemprop=\"datePublished\">2023<\/span>), p. <span itemprop=\"pagination\">6427-6435<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_361489734\"><span itemprop=\"issn\">ISSN: 0093-9994<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/TIA.2023.3288856' target='blank' itemprop=\"sameAs\">10.1109\/TIA.2023.3288856<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Couasnon T.<\/span>, <span class=\"author\" itemprop=\"author\">Fritsch B.<\/span>, <span class=\"author\" itemprop=\"author\">Jank M.<\/span>, <span class=\"author\" itemprop=\"author\">Blukis R.<\/span>, <span class=\"author\" itemprop=\"author\">Hutzler A.<\/span>, <span class=\"author\" itemprop=\"author\">Benning LG.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/310443876?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Goethite Mineral Dissolution to Probe the Chemistry of Radiolytic Water in Liquid-Phase Transmission Electron Microscopy<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_310443876\"><span itemprop=\"name\"><strong>Advanced Science<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_310443876\" \/><span itemprop=\"volumeNumber\">10<\/span><\/span>  (<span itemprop=\"datePublished\">2023<\/span>), Article No.: <span itemprop=\"pagination\">2301904<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_310443876\"><span itemprop=\"issn\">ISSN: 2198-3844<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1002\/advs.202301904' target='blank' itemprop=\"sameAs\">10.1002\/advs.202301904<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Fritsch B.<\/span>, <span class=\"author\" itemprop=\"author\">K\u00f6rner A.<\/span>, <span class=\"author\" itemprop=\"author\">Couasnon T.<\/span>, <span class=\"author\" itemprop=\"author\">Blukis R.<\/span>, <span class=\"author\" itemprop=\"author\">Taherkhani M.<\/span>, <span class=\"author\" itemprop=\"author\">Benning LG.<\/span>, <span class=\"author\" itemprop=\"author\">Jank M.<\/span>, <span class=\"author\" itemprop=\"author\">Spiecker E.<\/span>, <span class=\"author\" itemprop=\"author\">Hutzler A.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/306959773?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Tailoring the Acidity of Liquid Media with Ionizing Radiation: Rethinking the Acid-Base Correlation beyond pH<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_306959773\"><span itemprop=\"name\"><strong>Journal of Physical Chemistry Letters<\/strong><\/span><\/span> (<span itemprop=\"datePublished\">2023<\/span>), p. <span itemprop=\"pagination\">4644-4651<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_306959773\"><span itemprop=\"issn\">ISSN: 1948-7185<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1021\/acs.jpclett.3c00593' target='blank' itemprop=\"sameAs\">10.1021\/acs.jpclett.3c00593<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Geiling J.<\/span>, <span class=\"author\" itemprop=\"author\">Wagner L.<\/span>, <span class=\"author\" itemprop=\"author\">Auer F.<\/span>, <span class=\"author\" itemprop=\"author\">Ortner F.<\/span>, <span class=\"author\" itemprop=\"author\">Nu\u00df A.<\/span>, <span class=\"author\" itemprop=\"author\">Seyfried R.<\/span>, <span class=\"author\" itemprop=\"author\">Stammberger F.<\/span>, <span class=\"author\" itemprop=\"author\">Steinberger M.<\/span>, <span class=\"author\" itemprop=\"author\">B\u00f6smann A.<\/span>, <span class=\"author\" itemprop=\"author\">\u00d6chsner R.<\/span>, <span class=\"author\" itemprop=\"author\">Wasserscheid P.<\/span>, <span class=\"author\" itemprop=\"author\">Graichen K.<\/span>, <span class=\"author\" itemprop=\"author\">M\u00e4rz M.<\/span>, <span class=\"author\" itemprop=\"author\">Preuster P.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/309667023?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Operational experience with a liquid organic hydrogen carrier (LOHC) system for bidirectional storage of electrical energy over 725 h<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_309667023\"><span itemprop=\"name\"><strong>Journal of Energy Storage<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_309667023\" \/><span itemprop=\"volumeNumber\">72<\/span><\/span>  (<span itemprop=\"datePublished\">2023<\/span>), Article No.: <span itemprop=\"pagination\">108478<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_309667023\"><span itemprop=\"issn\">ISSN: 2352-152X<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.est.2023.108478' target='blank' itemprop=\"sameAs\">10.1016\/j.est.2023.108478<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\">Gradwohl Kevin-P, Lu Chen-Hsun, Liu Yujia, Richter Carsten, Boeck Torsten, Martin Jens, Albrecht Martin:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/359859975?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Strain relaxation of Si\/SiGe heterostructures by a geometric Monte Carlo approach<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_359859975\"><span itemprop=\"name\"><strong>Physica Status Solidi-Rapid Research Letters<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_359859975\" \/><span itemprop=\"volumeNumber\">17<\/span><\/span>  (<span itemprop=\"datePublished\">2023<\/span>), p. <span itemprop=\"pagination\">2200398<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_359859975\"><span itemprop=\"issn\">ISSN: 1862-6254<\/span><\/span><\/span><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Hutzler A.<\/span>, <span class=\"author\" itemprop=\"author\">Fritsch B.<\/span>, <span class=\"author\" itemprop=\"author\">Matthus CD.<\/span>, <span class=\"author\" itemprop=\"author\">Jank M.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/288787097?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Author Correction: Highly accurate determination of heterogeneously stacked Van-der-Waals materials by optical microspectroscopy (Scientific Reports, (2020), 10, 1, (13676), 10.1038\/s41598-020-70580-3)<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_288787097\"><span itemprop=\"name\"><strong>Scientific Reports<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_288787097\" \/><span itemprop=\"volumeNumber\">13<\/span><\/span>  (<span itemprop=\"datePublished\">2023<\/span>), Article No.: <span itemprop=\"pagination\">1410<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_288787097\"><span itemprop=\"issn\">ISSN: 2045-2322<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1038\/s41598-023-28605-0' target='blank' itemprop=\"sameAs\">10.1038\/s41598-023-28605-0<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Kolesnik-Gray M.<\/span>, <span class=\"author\" itemprop=\"author\">Meingast L.<\/span>, <span class=\"author\" itemprop=\"author\">Siebert M.<\/span>, <span class=\"author\" itemprop=\"author\">Unbehaun T.<\/span>, <span class=\"author\" itemprop=\"author\">Huf T.<\/span>, <span class=\"author\" itemprop=\"author\">Ellrott G.<\/span>, <span class=\"author\" itemprop=\"author\">Abellan Saez G.<\/span>, <span class=\"author\" itemprop=\"author\">Wild S.<\/span>, <span class=\"author\" itemprop=\"author\">Lloret Segura VJ.<\/span>, <span class=\"author\" itemprop=\"author\">Mundloch U.<\/span>, <span class=\"author\" itemprop=\"author\">Schwarz J.<\/span>, <span class=\"author\" itemprop=\"author\">Niebauer M.<\/span>, <span class=\"author\" itemprop=\"author\">Szabo M.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Hutzler A.<\/span>, <span class=\"author\" itemprop=\"author\">Hauke F.<\/span>, <span class=\"author\" itemprop=\"author\">Hirsch A.<\/span>, <span class=\"author\" itemprop=\"author\">Krstic V.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/296094770?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Unconventional conductivity increase in multilayer black phosphorus<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_296094770\"><span itemprop=\"name\"><strong>npj 2D Materials and Applications<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_296094770\" \/><span itemprop=\"volumeNumber\">7<\/span><\/span>  (<span itemprop=\"datePublished\">2023<\/span>), Article No.: <span itemprop=\"pagination\">21<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_296094770\"><span itemprop=\"issn\">ISSN: 2397-7132<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1038\/s41699-023-00384-2' target='blank' itemprop=\"sameAs\">10.1038\/s41699-023-00384-2<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\">Liu Yujia, Gradwohl Kevin-Peter, Lu Chen-HSun, Yamamoto Yuji, Remmele Thilo, Corley-Wiciak Cedric, Teubner Thomas, Richter Carsten, Albrecht Martin, Boeck Torsten:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/359860223?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Growth of 28Si Quantum Well Layers for Qubits by a Hybrid MBE\/CVD Technique<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_359860223\"><span itemprop=\"name\"><strong>ECS Journal of Solid State Science and Technology<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_359860223\" \/><span itemprop=\"volumeNumber\">12<\/span><\/span>  (<span itemprop=\"datePublished\">2023<\/span>), p. <span itemprop=\"pagination\">024006<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_359860223\"><span itemprop=\"issn\">ISSN: 2162-8769<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1149\/2162-8777\/acb734' target='blank' itemprop=\"sameAs\">10.1149\/2162-8777\/acb734<\/a><br \/>URL: <a href='https:\/\/iopscience.iop.org\/article\/10.1149\/2162-8777\/acb734\/meta' target='blank' itemprop=\"url\">https:\/\/iopscience.iop.org\/article\/10.1149\/2162-8777\/acb734\/meta<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Liu Y.<\/span>, <span class=\"author\" itemprop=\"author\">Gradwohl KP.<\/span>, <span class=\"author\" itemprop=\"author\">Lu CH.<\/span>, <span class=\"author\" itemprop=\"author\">Kaspars D.<\/span>, <span class=\"author\" itemprop=\"author\">Yamamoto Y.<\/span>, <span class=\"author\" itemprop=\"author\">Becker L.<\/span>, <span class=\"author\" itemprop=\"author\">Storck P.<\/span>, <span class=\"author\" itemprop=\"author\">Remmele T.<\/span>, <span class=\"author\" itemprop=\"author\">Boeck T.<\/span>, <span class=\"author\" itemprop=\"author\">Richter C.<\/span>, <span class=\"author\" itemprop=\"author\">Albrecht M.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/359860472?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Strain relaxation from annealing of SiGe heterostructures for qubits<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_359860472\"><span itemprop=\"name\"><strong>Journal of Applied Physics<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_359860472\" \/><span itemprop=\"volumeNumber\">134<\/span><\/span>  (<span itemprop=\"datePublished\">2023<\/span>)<br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_359860472\"><span itemprop=\"issn\">ISSN: 0021-8979<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1063\/5.0155448' target='blank' itemprop=\"sameAs\">10.1063\/5.0155448<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Marhenke J.<\/span>, <span class=\"author\" itemprop=\"author\">Dirnecker T.<\/span>, <span class=\"author\" itemprop=\"author\">Vogel N.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/312953572?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Stiffness influence on particle separation in polydimethylsiloxane-based deterministic lateral displacement devices<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_312953572\"><span itemprop=\"name\"><strong>Microfluidics and Nanofluidics<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_312953572\" \/><span itemprop=\"volumeNumber\">27<\/span><\/span>  (<span itemprop=\"datePublished\">2023<\/span>), Article No.: <span itemprop=\"pagination\">76<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_312953572\"><span itemprop=\"issn\">ISSN: 1613-4982<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1007\/s10404-023-02685-w' target='blank' itemprop=\"sameAs\">10.1007\/s10404-023-02685-w<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/Thesis\"><span class=\"author\" itemprop=\"author\">Pham A.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/301666643?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">System\u00fcbergreifende modulare Charakterisierung von D\u00fcnnschichtsystemen mittels Reflexionsmessungen<\/a><\/strong><\/span> (Master thesis, <span itemprop=\"datePublished\">2023<\/span>)<\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Schimmel S.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/338518973?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Junior Research Group on Nitride Semiconductors<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">Seminar of the Young Crystal Growers (DGKK)<\/span> (, <span itemprop=\"startDate\" content=\"2023-03-14\">14. March 2023<\/span>)<\/span><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Schimmel S.<\/span>, <span class=\"author\" itemprop=\"author\">Tomida D.<\/span>, <span class=\"author\" itemprop=\"author\">Ishiguro T.<\/span>, <span class=\"author\" itemprop=\"author\">Honda Y.<\/span>, <span class=\"author\" itemprop=\"author\">Chichibu SF.<\/span>, <span class=\"author\" itemprop=\"author\">Amano H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/291490162?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Temperature Field, Flow Field, and Temporal Fluctuations Thereof in Ammonothermal Growth of Bulk GaN\u2014Transition from Dissolution Stage to Growth Stage Conditions<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_291490162\"><span itemprop=\"name\"><strong>Materials<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_291490162\" \/><span itemprop=\"volumeNumber\">16<\/span><\/span>  (<span itemprop=\"datePublished\">2023<\/span>), p. <span itemprop=\"pagination\">2016<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_291490162\"><span itemprop=\"issn\">ISSN: 1996-1944<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.3390\/ma16052016' target='blank' itemprop=\"sameAs\">10.3390\/ma16052016<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Schlichting H.<\/span>, <span class=\"author\" itemprop=\"author\">Lim M.<\/span>, <span class=\"author\" itemprop=\"author\">Becker T.<\/span>, <span class=\"author\" itemprop=\"author\">Kallinger B.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/318179910?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">The Influence of Extended Defects in 4H-SiC Epitaxial Layers on Gate Oxide Performance and Reliability<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_318179910\"><span itemprop=\"name\"><strong>Materials Science Forum<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_318179910\" \/><span itemprop=\"volumeNumber\">1090<\/span><\/span>  (<span itemprop=\"datePublished\">2023<\/span>), p. <span itemprop=\"pagination\">127-133<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_318179910\"><span itemprop=\"issn\">ISSN: 0255-5476<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4028\/p-4i3rhf' target='blank' itemprop=\"sameAs\">10.4028\/p-4i3rhf<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/Thesis\"><span class=\"author\" itemprop=\"author\">Schmidt R.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/294621849?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Einzelprozessentwicklung f\u00fcr die Herstellung von Halbleiterbauelementen auf 4H-SiC a-Plane Substraten<\/a><\/strong><\/span> (Master thesis, <span itemprop=\"datePublished\">2023<\/span>)<\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Schraml M.<\/span>, <span class=\"author\" itemprop=\"author\">Papathanasiou N.<\/span>, <span class=\"author\" itemprop=\"author\">May A.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/332558664?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">4H-SiC PIN Photodiode for VUV Detection Using an Enhanced Emitter Doping Design<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">2023 IEEE Photonics Conference, IPC 2023<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Orlando, FL, USA<\/span><\/span>, <span itemprop=\"startDate\" content=\"2023-11-12\">12. November 2023<\/span> - <span itemprop=\"endDate\" content=\"2023-11-16\">16. November 2023<\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"name\" style=\"font-weight:bold\">2023 IEEE Photonics Conference, IPC 2023 - Proceedings<\/span> <span itemprop=\"datePublished\">2023<\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/IPC57732.2023.10360797' target='blank' itemprop=\"sameAs\">10.1109\/IPC57732.2023.10360797<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Schraml M.<\/span>, <span class=\"author\" itemprop=\"author\">Papathanasiou N.<\/span>, <span class=\"author\" itemprop=\"author\">May A.<\/span>, <span class=\"author\" itemprop=\"author\">Weiss T.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/306955293?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Towards SiC-Based VUV Pin-Photodiodes - Investigations on 4H-SiC Photodiodes with Shallow Implanted Al Emitters<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4028\/p-959z1t' target='blank' itemprop=\"sameAs\">10.4028\/p-959z1t<\/a><\/span><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Schwarz J.<\/span>, <span class=\"author\" itemprop=\"author\">Niebauer M.<\/span>, <span class=\"author\" itemprop=\"author\">Kolesnik-Gray M.<\/span>, <span class=\"author\" itemprop=\"author\">Szabo M.<\/span>, <span class=\"author\" itemprop=\"author\">Baier L.<\/span>, <span class=\"author\" itemprop=\"author\">Chava P.<\/span>, <span class=\"author\" itemprop=\"author\">Erbe A.<\/span>, <span class=\"author\" itemprop=\"author\">Krstic V.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Hutzler A.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/308164713?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Correlating Optical Microspectroscopy with 4\u00d74\u00a0Transfer Matrix Modeling for Characterizing Birefringent Van der Waals Materials<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_308164713\"><span itemprop=\"name\"><strong>Small Methods<\/strong><\/span><\/span> (<span itemprop=\"datePublished\">2023<\/span>)<br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_308164713\"><span itemprop=\"issn\">ISSN: 2366-9608<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1002\/smtd.202300618' target='blank' itemprop=\"sameAs\">10.1002\/smtd.202300618<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Seidel L.<\/span>, <span class=\"author\" itemprop=\"author\">Liu T.<\/span>, <span class=\"author\" itemprop=\"author\">Marzban B.<\/span>, <span class=\"author\" itemprop=\"author\">Kiyek V.<\/span>, <span class=\"author\" itemprop=\"author\">Schulze J.<\/span>, <span class=\"author\" itemprop=\"author\">Capellini G.<\/span>, <span class=\"author\" itemprop=\"author\">Witzens J.<\/span>, <span class=\"author\" itemprop=\"author\">Buca D.<\/span>, <span class=\"author\" itemprop=\"author\">Oehme M.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/307287968?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">SiGeSn\/GeSn Multi Quantum Wells Light Emitting Diodes with a Negative Differential Resistance<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">2023 IEEE Silicon Photonics Conference, SiPhotonics 2023<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Washington, DC<\/span><\/span>, <span itemprop=\"startDate\" content=\"2023-04-04\">4. April 2023<\/span> - <span itemprop=\"endDate\" content=\"2023-04-07\">7. April 2023<\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"name\" style=\"font-weight:bold\">IEEE International Conference on Group IV Photonics GFP<\/span> <span itemprop=\"datePublished\">2023<\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/SiPhotonics55903.2023.10141960' target='blank' itemprop=\"sameAs\">10.1109\/SiPhotonics55903.2023.10141960<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Singh M.<\/span>, <span class=\"author\" itemprop=\"author\">Abdelsamie M.<\/span>, <span class=\"author\" itemprop=\"author\">Li Q.<\/span>, <span class=\"author\" itemprop=\"author\">Kodalle T.<\/span>, <span class=\"author\" itemprop=\"author\">Lee DK.<\/span>, <span class=\"author\" itemprop=\"author\">Arnold S.<\/span>, <span class=\"author\" itemprop=\"author\">Ceratti DR.<\/span>, <span class=\"author\" itemprop=\"author\">Slack JL.<\/span>, <span class=\"author\" itemprop=\"author\">Schwartz CP.<\/span>, <span class=\"author\" itemprop=\"author\">Brabec C.<\/span>, <span class=\"author\" itemprop=\"author\">Tao S.<\/span>, <span class=\"author\" itemprop=\"author\">Sutter-Fella CM.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/313208609?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Effect of the Precursor Chemistry on the Crystallization of Triple Cation Mixed Halide Perovskites<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_313208609\"><span itemprop=\"name\"><strong>Chemistry of Materials<\/strong><\/span><\/span> (<span itemprop=\"datePublished\">2023<\/span>)<br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_313208609\"><span itemprop=\"issn\">ISSN: 0897-4756<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1021\/acs.chemmater.3c00799' target='blank' itemprop=\"sameAs\">10.1021\/acs.chemmater.3c00799<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Sk MR.<\/span>, <span class=\"author\" itemprop=\"author\">Thunder S.<\/span>, <span class=\"author\" itemprop=\"author\">Lehninger D.<\/span>, <span class=\"author\" itemprop=\"author\">Sanctis S.<\/span>, <span class=\"author\" itemprop=\"author\">Raffel Y.<\/span>, <span class=\"author\" itemprop=\"author\">Lederer M.<\/span>, <span class=\"author\" itemprop=\"author\">Jank MPM.<\/span>, <span class=\"author\" itemprop=\"author\">Kaempfe T.<\/span>, <span class=\"author\" itemprop=\"author\">De S.<\/span>, <span class=\"author\" itemprop=\"author\">Chakrabarti B.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/292074842?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Ferroelectric Content-Addressable Memory Cells with IGZO Channel: Impact of Retention Degradation on the Multibit Operation<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_292074842\"><span itemprop=\"name\"><strong>ACS Applied Electronic Materials<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_292074842\" \/><span itemprop=\"volumeNumber\">5<\/span><\/span>  (<span itemprop=\"datePublished\">2023<\/span>), p. <span itemprop=\"pagination\">812-820<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_292074842\"><span itemprop=\"issn\">ISSN: 2637-6113<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1021\/acsaelm.2c01357' target='blank' itemprop=\"sameAs\">10.1021\/acsaelm.2c01357<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">V\u00f6lkl A.<\/span>, <span class=\"author\" itemprop=\"author\">Toutouly J.<\/span>, <span class=\"author\" itemprop=\"author\">Drobek D.<\/span>, <span class=\"author\" itemprop=\"author\">Apeleo Zubiri B.<\/span>, <span class=\"author\" itemprop=\"author\">Spiecker E.<\/span>, <span class=\"author\" itemprop=\"author\">Klupp Taylor R.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/301958569?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Gram-Scale Continuous Flow Synthesis of Silver-on-Silica Patchy Nanoparticles with Widely Tunable Resonances for Plasmonics Applications<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_301958569\"><span itemprop=\"name\"><strong>ACS Applied Nano Materials<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_301958569\" \/><span itemprop=\"volumeNumber\">6<\/span><\/span>  (<span itemprop=\"datePublished\">2023<\/span>), p. <span itemprop=\"pagination\">10126-10137<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_301958569\"><span itemprop=\"issn\">ISSN: 2574-0970<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1021\/acsanm.3c00869' target='blank' itemprop=\"sameAs\">10.1021\/acsanm.3c00869<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/Book\">Kim S., Byun D.W., Shin H.K., Koo S.M., Erlbacher T., Lim M., Csato C., F\u00f6rthner J., Rusch O., Ehrensberger K., Kupfer B., Beuer S., Oertel S.:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/318654180?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">A Modeling of 4H-SiC Super-Junction MOSFETs with Filtered High Energy Implantation<\/a><\/strong><\/span><br \/><span itemprop=\"publisher\" itemscope itemtype=\"http:\/\/schema.org\/Organization\"><span itemprop=\"name\">Trans Tech Publications Ltd<\/span><\/span>, <span itemprop=\"datePublished\">2023<\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4028\/p-hyy2l9' target='blank' itemprop=\"sameAs\">10.4028\/p-hyy2l9<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Wei\u00dfhaupt D.<\/span>, <span class=\"author\" itemprop=\"author\">Funk HS.<\/span>, <span class=\"author\" itemprop=\"author\">Oehme M.<\/span>, <span class=\"author\" itemprop=\"author\">Bloos D.<\/span>, <span class=\"author\" itemprop=\"author\">Berkmann F.<\/span>, <span class=\"author\" itemprop=\"author\">Seidel L.<\/span>, <span class=\"author\" itemprop=\"author\">Fischer IA.<\/span>, <span class=\"author\" itemprop=\"author\">Schulze J.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/289024490?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">High mobility Ge 2DHG based MODFETs for low-temperature applications<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_289024490\"><span itemprop=\"name\"><strong>Semiconductor Science and Technology<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_289024490\" \/><span itemprop=\"volumeNumber\">38<\/span><\/span>  (<span itemprop=\"datePublished\">2023<\/span>), Article No.: <span itemprop=\"pagination\">035007<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_289024490\"><span itemprop=\"issn\">ISSN: 0268-1242<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1088\/1361-6641\/acb22f' target='blank' itemprop=\"sameAs\">10.1088\/1361-6641\/acb22f<\/a><\/li><\/ul><h3>2022<\/h3><ul class=\"cris-publications \" lang=\"en\"><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Baierhofer D.<\/span>, <span class=\"author\" itemprop=\"author\">Thomas B.<\/span>, <span class=\"author\" itemprop=\"author\">Staiger F.<\/span>, <span class=\"author\" itemprop=\"author\">Marchetti B.<\/span>, <span class=\"author\" itemprop=\"author\">Foerster C.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/267818532?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Defect reduction in SiC epilayers by different substrate cleaning methods<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_267818532\"><span itemprop=\"name\"><strong>Materials Science in Semiconductor Processing<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_267818532\" \/><span itemprop=\"volumeNumber\">140<\/span><\/span>  (<span itemprop=\"datePublished\">2022<\/span>)<br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_267818532\"><span itemprop=\"issn\">ISSN: 1369-8001<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.mssp.2021.106414' target='blank' itemprop=\"sameAs\">10.1016\/j.mssp.2021.106414<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\">Erlbacher T., Rouchier S., Guiot E., Picun G., Allibert F., Leib J., Becker T., Schwarzenbach W., Drouin A., B\u00e9thoux J.M., Widiez J.:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/322742513?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Proven Power Cycling Reliability of SmartSiC\u2122 Substrate for Power Devices<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2022<\/span><span itemprop=\"startDate\" content=\"2022\"><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.30420\/565822081' target='blank' itemprop=\"sameAs\">10.30420\/565822081<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Becker T.<\/span>, <span class=\"author\" itemprop=\"author\">Boettcher N.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/281177703?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Influence of Non-Stoichiometric Silicon Nitride Layer Thickness on Electrical Properties and Manufacturability of 900 V Silicon RC-Snubbers<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">12th International Conference on Integrated Power Electronics Systems, CIPS 2022<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Berlin, DEU<\/span><\/span>, <span itemprop=\"startDate\" content=\"2022-03-15\">15. March 2022<\/span> - <span itemprop=\"endDate\" content=\"2022-03-17\">17. March 2022<\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"name\" style=\"font-weight:bold\">ETG-Fachbericht<\/span> <span itemprop=\"datePublished\">2022<\/span><\/span><br \/>URL: <a href='https:\/\/www.scopus.com\/record\/display.uri?eid=2-s2.0-85136098985&origin=inward' target='blank' itemprop=\"url\">https:\/\/www.scopus.com\/record\/display.uri?eid=2-s2.0-85136098985&origin=inward<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Berkmann F.<\/span>, <span class=\"author\" itemprop=\"author\">Augel L.<\/span>, <span class=\"author\" itemprop=\"author\">Hack M.<\/span>, <span class=\"author\" itemprop=\"author\">Kawaguchi Y.<\/span>, <span class=\"author\" itemprop=\"author\">Weisshaupt D.<\/span>, <span class=\"author\" itemprop=\"author\">Fischer IA.<\/span>, <span class=\"author\" itemprop=\"author\">Schulze J.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/277087156?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Optimization of Fully Integrated Al Nanohole Array-Based Refractive Index Sensors for Use With a LED Light Source<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_277087156\"><span itemprop=\"name\"><strong>IEEE Photonics Journal<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_277087156\" \/><span itemprop=\"volumeNumber\">14<\/span><\/span>  (<span itemprop=\"datePublished\">2022<\/span>)<br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_277087156\"><span itemprop=\"issn\">ISSN: 1943-0655<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/JPHOT.2022.3177354' target='blank' itemprop=\"sameAs\">10.1109\/JPHOT.2022.3177354<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Boettcher N.<\/span>, <span class=\"author\" itemprop=\"author\">Takamori T.<\/span>, <span class=\"author\" itemprop=\"author\">Wada K.<\/span>, <span class=\"author\" itemprop=\"author\">Saito W.<\/span>, <span class=\"author\" itemprop=\"author\">Nishizawa SI.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/281179442?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Fabrication Aspects and Switching Performance of a Self-Sensing 800 V SiC Circuit Breaker Device<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">34th IEEE International Symposium on Power Semiconductor Devices and ICs, ISPSD 2022<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Vancouver, BC, CAN<\/span><\/span>, <span itemprop=\"startDate\" content=\"2022-05-22\">22. May 2022<\/span> - <span itemprop=\"endDate\" content=\"2022-05-25\">25. May 2022<\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"name\" style=\"font-weight:bold\">Proceedings of the International Symposium on Power Semiconductor Devices and ICs<\/span> <span itemprop=\"datePublished\">2022<\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/ISPSD49238.2022.9813628' target='blank' itemprop=\"sameAs\">10.1109\/ISPSD49238.2022.9813628<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Boettcher N.<\/span>, <span class=\"author\" itemprop=\"author\">Takamori T.<\/span>, <span class=\"author\" itemprop=\"author\">Wada K.<\/span>, <span class=\"author\" itemprop=\"author\">Saito W.<\/span>, <span class=\"author\" itemprop=\"author\">Nishizawa SI.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/285693250?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Short Circuit Performance and Current Limiting Mode of a Monolithically Integrated SiC Circuit Breaker for DC Applications up to 800 v<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">24th European Conference on Power Electronics and Applications, EPE 2022 ECCE Europe<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Hannover<\/span><\/span>, <span itemprop=\"startDate\" content=\"2022-09-05\">5. September 2022<\/span> - <span itemprop=\"endDate\" content=\"2022-09-09\">9. September 2022<\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"name\" style=\"font-weight:bold\">24th European Conference on Power Electronics and Applications, EPE 2022 ECCE Europe<\/span> <span itemprop=\"datePublished\">2022<\/span><\/span><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">B\u00f6ttcher N.<\/span>, <span class=\"author\" itemprop=\"author\">Takamori T.<\/span>, <span class=\"author\" itemprop=\"author\">Wada K.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>, <span class=\"author\" itemprop=\"author\">Saito W.<\/span>, <span class=\"author\" itemprop=\"author\">Nishizawa SI.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/361489384?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Adjustable Current Limit Feature with a Self-Sensing and Self-Triggering Monolithically Integrated SiC Circuit Breaker Device<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">2022 IEEE Energy Conversion Congress and Exposition, ECCE 2022<\/span><span itemprop=\"startDate\" content=\"2022\"><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/ECCE50734.2022.9948054' target='blank' itemprop=\"sameAs\">10.1109\/ECCE50734.2022.9948054<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Daneri S.<\/span>, <span class=\"author\" itemprop=\"author\">Kerschbaum A.<\/span>, <span class=\"author\" itemprop=\"author\">Runa E.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/283160055?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">One-dimensionality of the minimizers for a diffuse interface generalized antiferromagnetic model in general dimension<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_283160055\"><span itemprop=\"name\"><strong>Journal of Functional Analysis<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_283160055\" \/><span itemprop=\"volumeNumber\">283<\/span><\/span>  (<span itemprop=\"datePublished\">2022<\/span>), Article No.: <span itemprop=\"pagination\">109715<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_283160055\"><span itemprop=\"issn\">ISSN: 0022-1236<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.jfa.2022.109715' target='blank' itemprop=\"sameAs\">10.1016\/j.jfa.2022.109715<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Dreher V.<\/span>, <span class=\"author\" itemprop=\"author\">Joch D.<\/span>, <span class=\"author\" itemprop=\"author\">Kren H.<\/span>, <span class=\"author\" itemprop=\"author\">Schwarberg J.<\/span>, <span class=\"author\" itemprop=\"author\">Jank M.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/287352026?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Ultrathin and flexible sensors for pressure and temperature monitoring inside battery cells<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">2022 IEEE Sensors Conference, SENSORS 2022<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Dallas, TX<\/span><\/span>, <span itemprop=\"startDate\" content=\"2022-10-30\">30. October 2022<\/span> - <span itemprop=\"endDate\" content=\"2022-11-02\">2. November 2022<\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"name\" style=\"font-weight:bold\">Proceedings of IEEE Sensors<\/span> <span itemprop=\"datePublished\">2022<\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/SENSORS52175.2022.9967234' target='blank' itemprop=\"sameAs\">10.1109\/SENSORS52175.2022.9967234<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Ernst O.<\/span>, <span class=\"author\" itemprop=\"author\">Liu Y.<\/span>, <span class=\"author\" itemprop=\"author\">Boeck T.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/359858981?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Leveraging dewetting models rather than nucleation models: current crystallographic challenges in interfacial and nanomaterials research: Contemporary and prospective opportunities to exploit dewetting theory for energy conversion devices and quantum computing<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_359858981\"><span itemprop=\"name\"><strong>Zeitschrift f\u00fcr Kristallographie - Crystalline Materials<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_359858981\" \/><span itemprop=\"volumeNumber\">237<\/span><\/span>  (<span itemprop=\"datePublished\">2022<\/span>), p. <span itemprop=\"pagination\">191--200<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_359858981\"><span itemprop=\"issn\">ISSN: 2194-4946<\/span><\/span><\/span><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Friedrich RP.<\/span>, <span class=\"author\" itemprop=\"author\">Kappes M.<\/span>, <span class=\"author\" itemprop=\"author\">Cicha I.<\/span>, <span class=\"author\" itemprop=\"author\">Tietze R.<\/span>, <span class=\"author\" itemprop=\"author\">Braun C.<\/span>, <span class=\"author\" itemprop=\"author\">Schneider-Stock R.<\/span>, <span class=\"author\" itemprop=\"author\">Nagy R.<\/span>, <span class=\"author\" itemprop=\"author\">Alexiou C.<\/span>, <span class=\"author\" itemprop=\"author\">Janko C.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/275408015?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Optical Microscopy Systems for the Detection of Unlabeled Nanoparticles<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_275408015\"><span itemprop=\"name\"><strong>International Journal of Nanomedicine<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_275408015\" \/><span itemprop=\"volumeNumber\">Volume 17<\/span><\/span>  (<span itemprop=\"datePublished\">2022<\/span>), p. <span itemprop=\"pagination\">2139-2163<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_275408015\"><span itemprop=\"issn\">ISSN: 1176-9114<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.2147\/IJN.S355007' target='blank' itemprop=\"sameAs\">10.2147\/IJN.S355007<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Fritsch B.<\/span>, <span class=\"author\" itemprop=\"author\">Wu M.<\/span>, <span class=\"author\" itemprop=\"author\">Hutzler A.<\/span>, <span class=\"author\" itemprop=\"author\">Zhou D.<\/span>, <span class=\"author\" itemprop=\"author\">Spruit R.<\/span>, <span class=\"author\" itemprop=\"author\">Vogl L.<\/span>, <span class=\"author\" itemprop=\"author\">Will J.<\/span>, <span class=\"author\" itemprop=\"author\">P\u00e9rez Garza H.<\/span>, <span class=\"author\" itemprop=\"author\">M\u00e4rz M.<\/span>, <span class=\"author\" itemprop=\"author\">Jank M.<\/span>, <span class=\"author\" itemprop=\"author\">Spiecker E.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/269943496?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Sub-Kelvin thermometry for evaluating the local temperature stability within in situ TEM gas cells<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_269943496\"><span itemprop=\"name\"><strong>Ultramicroscopy<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_269943496\" \/><span itemprop=\"volumeNumber\">235<\/span><\/span>  (<span itemprop=\"datePublished\">2022<\/span>), p. <span itemprop=\"pagination\">113494<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_269943496\"><span itemprop=\"issn\">ISSN: 0304-3991<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.ultramic.2022.113494' target='blank' itemprop=\"sameAs\">10.1016\/j.ultramic.2022.113494<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Fritsch B.<\/span>, <span class=\"author\" itemprop=\"author\">Zech T.<\/span>, <span class=\"author\" itemprop=\"author\">Bruns M.<\/span>, <span class=\"author\" itemprop=\"author\">K\u00f6rner A.<\/span>, <span class=\"author\" itemprop=\"author\">Khadivianazar S.<\/span>, <span class=\"author\" itemprop=\"author\">Wu M.<\/span>, <span class=\"author\" itemprop=\"author\">Zargar Talebi N.<\/span>, <span class=\"author\" itemprop=\"author\">Virtanen S.<\/span>, <span class=\"author\" itemprop=\"author\">Unruh T.<\/span>, <span class=\"author\" itemprop=\"author\">Jank M.<\/span>, <span class=\"author\" itemprop=\"author\">Spiecker E.<\/span>, <span class=\"author\" itemprop=\"author\">Hutzler A.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/277472013?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Radiolysis\u2010Driven Evolution of Gold Nanostructures \u2013 Model Verification by Scale Bridging In Situ Liquid\u2010Phase Transmission Electron Microscopy and X\u2010Ray Diffraction<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_277472013\"><span itemprop=\"name\"><strong>Advanced Science<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_277472013\" \/><span itemprop=\"volumeNumber\">9<\/span><\/span>  (<span itemprop=\"datePublished\">2022<\/span>), Article No.: <span itemprop=\"pagination\">2202803<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_277472013\"><span itemprop=\"issn\">ISSN: 2198-3844<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1002\/advs.202202803' target='blank' itemprop=\"sameAs\">10.1002\/advs.202202803<\/a><br \/>URL: <a href='https:\/\/onlinelibrary.wiley.com\/doi\/10.1002\/advs.202202803' target='blank' itemprop=\"url\">https:\/\/onlinelibrary.wiley.com\/doi\/10.1002\/advs.202202803<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/Thesis\"><span class=\"author\" itemprop=\"author\">Jena S.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/287958496?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Optimierung von Lithographieprozessen auf Germaniumoberfl\u00e4chen zur Herstellung von Nanodr\u00e4hten<\/a><\/strong><\/span> (Bachelor thesis, <span itemprop=\"datePublished\">2022<\/span>)<\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Liu Y.<\/span>, <span class=\"author\" itemprop=\"author\">Gradwohl KP.<\/span>, <span class=\"author\" itemprop=\"author\">Lu CH.<\/span>, <span class=\"author\" itemprop=\"author\">Remmele T.<\/span>, <span class=\"author\" itemprop=\"author\">Yamamoto Y.<\/span>, <span class=\"author\" itemprop=\"author\">Zoellner MH.<\/span>, <span class=\"author\" itemprop=\"author\">Schroeder T.<\/span>, <span class=\"author\" itemprop=\"author\">Boeck T.<\/span>, <span class=\"author\" itemprop=\"author\">Houari A.<\/span>, <span class=\"author\" itemprop=\"author\">Richter C.<\/span>, <span class=\"author\" itemprop=\"author\">Albrecht M.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/359859478?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Role of critical thickness in SiGe\/Si\/SiGe heterostructure design for qubits<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_359859478\"><span itemprop=\"name\"><strong>Journal of Applied Physics<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_359859478\" \/><span itemprop=\"volumeNumber\">132<\/span><\/span>  (<span itemprop=\"datePublished\">2022<\/span>)<br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_359859478\"><span itemprop=\"issn\">ISSN: 0021-8979<\/span><\/span><\/span><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\">Liu Yujia, Gradwohl Kevin-Peter, Lu Chenhsun, Yamamoto Yuji, Remmele Thilo, Corley-Wiciak Cedric, Teubner Thomas, Richter Carsten, Albrecht Martin, Boeck Torsten:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/359859726?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Viewing SiGe Heterostructure for Qubits with Dislocation Theory<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_359859726\"><span itemprop=\"name\"><strong>ECS Transactions<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_359859726\" \/><span itemprop=\"volumeNumber\">109<\/span><\/span>  (<span itemprop=\"datePublished\">2022<\/span>), p. <span itemprop=\"pagination\">189--196<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_359859726\"><span itemprop=\"issn\">ISSN: 1938-5862<\/span><\/span><\/span><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Liu Y.<\/span>, <span class=\"author\" itemprop=\"author\">Rinner S.<\/span>, <span class=\"author\" itemprop=\"author\">Remmele T.<\/span>, <span class=\"author\" itemprop=\"author\">Ernst O.<\/span>, <span class=\"author\" itemprop=\"author\">Reiserer A.<\/span>, <span class=\"author\" itemprop=\"author\">Boeck T.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/359859230?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">28Silicon-on-insulator for optically interfaced quantum emitters<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_359859230\"><span itemprop=\"name\"><strong>Journal of Crystal Growth<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_359859230\" \/><span itemprop=\"volumeNumber\">593<\/span><\/span>  (<span itemprop=\"datePublished\">2022<\/span>), p. <span itemprop=\"pagination\">126733<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_359859230\"><span itemprop=\"issn\">ISSN: 0022-0248<\/span><\/span><\/span><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Marhenke J.<\/span>, <span class=\"author\" itemprop=\"author\">Dirnecker T.<\/span>, <span class=\"author\" itemprop=\"author\">Vogel N.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/285876309?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Increasing flow rates in polydimethylsiloxane-based deterministic lateral displacement devices for sub-micrometer particle separation<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_285876309\"><span itemprop=\"name\"><strong>Microfluidics and Nanofluidics<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_285876309\" \/><span itemprop=\"volumeNumber\">27<\/span><\/span>  (<span itemprop=\"datePublished\">2022<\/span>), Article No.: <span itemprop=\"pagination\">2<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_285876309\"><span itemprop=\"issn\">ISSN: 1613-4982<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1007\/s10404-022-02609-0' target='blank' itemprop=\"sameAs\">10.1007\/s10404-022-02609-0<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Marzban B.<\/span>, <span class=\"author\" itemprop=\"author\">Seidel L.<\/span>, <span class=\"author\" itemprop=\"author\">Kiyek V.<\/span>, <span class=\"author\" itemprop=\"author\">Liu T.<\/span>, <span class=\"author\" itemprop=\"author\">Z\u00f6llner M.<\/span>, <span class=\"author\" itemprop=\"author\">Ikonic Z.<\/span>, <span class=\"author\" itemprop=\"author\">Capellini G.<\/span>, <span class=\"author\" itemprop=\"author\">Buca D.<\/span>, <span class=\"author\" itemprop=\"author\">Schulze J.<\/span>, <span class=\"author\" itemprop=\"author\">Oehme M.<\/span>, <span class=\"author\" itemprop=\"author\">Witzens J.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/276688005?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Modeling and design of an electrically pumped SiGeSn microring laser<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">Silicon Photonics XVII 2022<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Online<\/span><\/span>, <span itemprop=\"startDate\" content=\"2022-02-20\">20. February 2022<\/span> - <span itemprop=\"endDate\" content=\"2022-02-24\">24. February 2022<\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"author\">Graham T. Reed, Andrew P. Knights (ed.): <\/span><span itemprop=\"name\" style=\"font-weight:bold\">Proceedings of SPIE - The International Society for Optical Engineering<\/span> <span itemprop=\"datePublished\">2022<\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1117\/12.2609537' target='blank' itemprop=\"sameAs\">10.1117\/12.2609537<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Marzban B.<\/span>, <span class=\"author\" itemprop=\"author\">Seidel L.<\/span>, <span class=\"author\" itemprop=\"author\">Liu T.<\/span>, <span class=\"author\" itemprop=\"author\">Kiyek V.<\/span>, <span class=\"author\" itemprop=\"author\">Wu K.<\/span>, <span class=\"author\" itemprop=\"author\">Zollner MH.<\/span>, <span class=\"author\" itemprop=\"author\">Ikonik Z.<\/span>, <span class=\"author\" itemprop=\"author\">Schulze J.<\/span>, <span class=\"author\" itemprop=\"author\">Grutzmacher D.<\/span>, <span class=\"author\" itemprop=\"author\">Capellini G.<\/span>, <span class=\"author\" itemprop=\"author\">Oehme M.<\/span>, <span class=\"author\" itemprop=\"author\">Witzens J.<\/span>, <span class=\"author\" itemprop=\"author\">Buca D.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/282424054?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Electrically pumped SiGeSn microring lasers<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">2022 IEEE Photonics Society Summer Topicals Meeting Series, SUM 2022<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Cabo San Lucas, MEX<\/span><\/span>, <span itemprop=\"startDate\" content=\"2022-07-11\">11. July 2022<\/span> - <span itemprop=\"endDate\" content=\"2022-07-13\">13. July 2022<\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"name\" style=\"font-weight:bold\">2022 IEEE Photonics Society Summer Topicals Meeting Series, SUM 2022 - Proceedings<\/span> <span itemprop=\"datePublished\">2022<\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/SUM53465.2022.9858260' target='blank' itemprop=\"sameAs\">10.1109\/SUM53465.2022.9858260<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">May A.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Beuer S.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/278142802?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Via Size-Dependent Properties of TiAl Ohmic Contacts on 4H-SiC<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_278142802\"><span itemprop=\"name\"><strong>Materials Science Forum<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_278142802\" \/><span itemprop=\"volumeNumber\">1062<\/span><\/span>  (<span itemprop=\"datePublished\">2022<\/span>), p. <span itemprop=\"pagination\">185-189<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_278142802\"><span itemprop=\"issn\">ISSN: 0255-5476<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4028\/p-36s1w4' target='blank' itemprop=\"sameAs\">10.4028\/p-36s1w4<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/Thesis\"><span class=\"author\" itemprop=\"author\">Muthumbi AK.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/298084384?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Defect detection in nano-imprint stamps with deep learning and low resolution microscope<\/a><\/strong><\/span> (Master thesis, <span itemprop=\"datePublished\">2022<\/span>)<\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Schimmel S.<\/span>, <span class=\"author\" itemprop=\"author\">Salamon M.<\/span>, <span class=\"author\" itemprop=\"author\">Tomida D.<\/span>, <span class=\"author\" itemprop=\"author\">Ishiguro T.<\/span>, <span class=\"author\" itemprop=\"author\">Honda Y.<\/span>, <span class=\"author\" itemprop=\"author\">Chichibu SF.<\/span>, <span class=\"author\" itemprop=\"author\">Amano H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/281272447?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">High Energy Computed Tomography as a Tool for Validation of Numerical Simulations of Ammonothermal Crystal Growth of GaN<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">8th International Workshop on Crystal Growth Technology<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Berlin<\/span><\/span>, <span itemprop=\"startDate\" content=\"2022-05-29\">29. May 2022<\/span> - <span itemprop=\"endDate\" content=\"2022-06-02\">2. June 2022<\/span>)<\/span><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Schimmel S.<\/span>, <span class=\"author\" itemprop=\"author\">Salamon M.<\/span>, <span class=\"author\" itemprop=\"author\">Tomida D.<\/span>, <span class=\"author\" itemprop=\"author\">Kobelt I.<\/span>, <span class=\"author\" itemprop=\"author\">Heinlein L.<\/span>, <span class=\"author\" itemprop=\"author\">Kimmel AC.<\/span>, <span class=\"author\" itemprop=\"author\">Steigerwald T.<\/span>, <span class=\"author\" itemprop=\"author\">Ishiguro T.<\/span>, <span class=\"author\" itemprop=\"author\">Honda Y.<\/span>, <span class=\"author\" itemprop=\"author\">Chichibu SF.<\/span>, <span class=\"author\" itemprop=\"author\">Amano H.<\/span>, <span class=\"author\" itemprop=\"author\">Schl\u00fccker E.<\/span>, <span class=\"author\" itemprop=\"author\">Wellmann P.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/281272186?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">In Situ Monitoring Technologies as Prospective Validation Tools for Numerical Simulations of Ammonothermal Crystal Growth<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">7th European Conference on Crystal Growth<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Paris<\/span><\/span>, <span itemprop=\"startDate\" content=\"2022-07-25\">25. July 2022<\/span> - <span itemprop=\"endDate\" content=\"2022-07-27\">27. July 2022<\/span>)<\/span><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Schimmel S.<\/span>, <span class=\"author\" itemprop=\"author\">Salamon M.<\/span>, <span class=\"author\" itemprop=\"author\">Tomida D.<\/span>, <span class=\"author\" itemprop=\"author\">Neumeier S.<\/span>, <span class=\"author\" itemprop=\"author\">Ishiguro T.<\/span>, <span class=\"author\" itemprop=\"author\">Honda Y.<\/span>, <span class=\"author\" itemprop=\"author\">Chichibu SF.<\/span>, <span class=\"author\" itemprop=\"author\">Amano H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/281725596?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">High-Energy Computed Tomography as a Prospective Tool for In Situ Monitoring of Mass Transfer Processes inside High-Pressure Reactors-A Case Study on Ammonothermal Bulk Crystal Growth of Nitrides including GaN<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_281725596\"><span itemprop=\"name\"><strong>Materials<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_281725596\" \/><span itemprop=\"volumeNumber\">15<\/span><\/span>  (<span itemprop=\"datePublished\">2022<\/span>), p. <span itemprop=\"pagination\">6165<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_281725596\"><span itemprop=\"issn\">ISSN: 1996-1944<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.3390\/ma15176165' target='blank' itemprop=\"sameAs\">10.3390\/ma15176165<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Schimmel S.<\/span>, <span class=\"author\" itemprop=\"author\">Sun W.<\/span>, <span class=\"author\" itemprop=\"author\">Dropka N.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/281837762?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Artificial Intelligence for Crystal Growth and Characterization<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_281837762\"><span itemprop=\"name\"><strong>Crystals<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_281837762\" \/><span itemprop=\"volumeNumber\">12<\/span><\/span>  (<span itemprop=\"datePublished\">2022<\/span>), p. <span itemprop=\"pagination\">1232<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_281837762\"><span itemprop=\"issn\">ISSN: 2073-4352<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.3390\/cryst12091232' target='blank' itemprop=\"sameAs\">10.3390\/cryst12091232<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Schimmel S.<\/span>, <span class=\"author\" itemprop=\"author\">Tomida D.<\/span>, <span class=\"author\" itemprop=\"author\">Ishiguro T.<\/span>, <span class=\"author\" itemprop=\"author\">Honda Y.<\/span>, <span class=\"author\" itemprop=\"author\">Chichibu SF.<\/span>, <span class=\"author\" itemprop=\"author\">Amano H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/284004185?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Temperature field and fluid flow in ammonothermal growth of GaN during etch-back and crystal growth for a retrograde solubility configuration<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">International Workshop on Nitride Semiconductors<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Berlin<\/span><\/span>, <span itemprop=\"startDate\" content=\"2022-10-09\">9. October 2022<\/span> - <span itemprop=\"endDate\" content=\"2022-10-14\">14. October 2022<\/span>)<\/span><\/li><li itemscope itemtype=\"http:\/\/schema.org\/Thesis\"><span class=\"author\" itemprop=\"author\">Sedova V.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/298089018?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Modeling of thick photoresist for grayscale lithography application<\/a><\/strong><\/span> (Master thesis, <span itemprop=\"datePublished\">2022<\/span>)<\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Seidel L.<\/span>, <span class=\"author\" itemprop=\"author\">Schafer S.<\/span>, <span class=\"author\" itemprop=\"author\">Oehme M.<\/span>, <span class=\"author\" itemprop=\"author\">Buca D.<\/span>, <span class=\"author\" itemprop=\"author\">Capellini G.<\/span>, <span class=\"author\" itemprop=\"author\">Schulze J.<\/span>, <span class=\"author\" itemprop=\"author\">Schwarz D.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/285695960?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Electroluminescence of SixGe1-x-ySny \/ Ge1-ySny pin-Diodes Grown on a GeSn Buffer<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">48th IEEE European Solid State Circuits Conference, ESSCIRC 2022<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Milan, ITA<\/span><\/span>, <span itemprop=\"startDate\" content=\"2022-09-19\">19. September 2022<\/span> - <span itemprop=\"endDate\" content=\"2022-09-22\">22. September 2022<\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"name\" style=\"font-weight:bold\">ESSCIRC 2022 - IEEE 48th European Solid State Circuits Conference, Proceedings<\/span> <span itemprop=\"datePublished\">2022<\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/ESSCIRC55480.2022.9911458' target='blank' itemprop=\"sameAs\">10.1109\/ESSCIRC55480.2022.9911458<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/Thesis\"><span class=\"author\" itemprop=\"author\">Szabo M.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/287421122?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Optimierung und Charakterisierung von 2D-Materialien f\u00fcr die Passivierung von schwarzem Phosphor<\/a><\/strong><\/span> (Master thesis, <span itemprop=\"datePublished\">2022<\/span>)<\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Wanitzek M.<\/span>, <span class=\"author\" itemprop=\"author\">Oehme M.<\/span>, <span class=\"author\" itemprop=\"author\">Spieth C.<\/span>, <span class=\"author\" itemprop=\"author\">Schwarz D.<\/span>, <span class=\"author\" itemprop=\"author\">Seidel L.<\/span>, <span class=\"author\" itemprop=\"author\">Schulze J.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/285695225?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">GeSn-on-Si Avalanche Photodiodes for Short-Wave Infrared Detection<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">48th IEEE European Solid State Circuits Conference, ESSCIRC 2022<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Milan, ITA<\/span><\/span>, <span itemprop=\"startDate\" content=\"2022-09-19\">19. September 2022<\/span> - <span itemprop=\"endDate\" content=\"2022-09-22\">22. September 2022<\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"name\" style=\"font-weight:bold\">ESSCIRC 2022 - IEEE 48th European Solid State Circuits Conference, Proceedings<\/span> <span itemprop=\"datePublished\">2022<\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/ESSCIRC55480.2022.9911363' target='blank' itemprop=\"sameAs\">10.1109\/ESSCIRC55480.2022.9911363<\/a><\/li><\/ul><h3>2021<\/h3><ul class=\"cris-publications \" lang=\"en\"><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Awad A.<\/span>, <span class=\"author\" itemprop=\"author\">Brendel P.<\/span>, <span class=\"author\" itemprop=\"author\">Evanschitzky P.<\/span>, <span class=\"author\" itemprop=\"author\">Woldeamanual DS.<\/span>, <span class=\"author\" itemprop=\"author\">Rosskopf A.<\/span>, <span class=\"author\" itemprop=\"author\">Erdmann A.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/268300461?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Accurate prediction of EUV lithographic images and 3D mask effects using generative networks<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_268300461\"><span itemprop=\"name\"><strong>Journal of Micro-Nanolithography MEMS and MOEMS<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_268300461\" \/><span itemprop=\"volumeNumber\">20<\/span><\/span>  (<span itemprop=\"datePublished\">2021<\/span>)<br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_268300461\"><span itemprop=\"issn\">ISSN: 1932-5150<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1117\/1.JMM.20.4.043201' target='blank' itemprop=\"sameAs\">10.1117\/1.JMM.20.4.043201<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Becker T.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/338882404?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Reliability of Silicon-Nitride based High-Voltage Monolithic Capacitors<\/a><\/strong><\/span><br \/> (<span itemprop=\"datePublished\">2021<\/span>)<\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.24406\/publica-fhg-410867' target='blank' itemprop=\"sameAs\">10.24406\/publica-fhg-410867<\/a><br \/>(anderer)<\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Boettcher N.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/262977228?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">A Monolithically Integrated SiC Circuit Breaker<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_262977228\"><span itemprop=\"name\"><strong>IEEE Electron Device Letters<\/strong><\/span><\/span> (<span itemprop=\"datePublished\">2021<\/span>)<br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_262977228\"><span itemprop=\"issn\">ISSN: 0741-3106<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/LED.2021.3102935' target='blank' itemprop=\"sameAs\">10.1109\/LED.2021.3102935<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Fritsch B.<\/span>, <span class=\"author\" itemprop=\"author\">Hutzler A.<\/span>, <span class=\"author\" itemprop=\"author\">Wu M.<\/span>, <span class=\"author\" itemprop=\"author\">Khadivianazar S.<\/span>, <span class=\"author\" itemprop=\"author\">Vogl L.<\/span>, <span class=\"author\" itemprop=\"author\">Jank M.<\/span>, <span class=\"author\" itemprop=\"author\">M\u00e4rz M.<\/span>, <span class=\"author\" itemprop=\"author\">Spiecker E.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/249988049?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Accessing local electron-beam induced temperature changes during in situ liquid-phase transmission electron microscopy<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_249988049\"><span itemprop=\"name\"><strong>Nanoscale Advances<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_249988049\" \/><span itemprop=\"volumeNumber\">3<\/span><\/span>  (<span itemprop=\"datePublished\">2021<\/span>), p. <span itemprop=\"pagination\">2466 - 2474<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_249988049\"><span itemprop=\"issn\">ISSN: 2516-0230<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1039\/D0NA01027H' target='blank' itemprop=\"sameAs\">10.1039\/D0NA01027H<\/a><br \/>URL: <a href='https:\/\/pubs.rsc.org\/en\/content\/articlelanding\/2021\/NA\/D0NA01027H' target='blank' itemprop=\"url\">https:\/\/pubs.rsc.org\/en\/content\/articlelanding\/2021\/NA\/D0NA01027H<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Fritsch B.<\/span>, <span class=\"author\" itemprop=\"author\">Hutzler A.<\/span>, <span class=\"author\" itemprop=\"author\">Wu M.<\/span>, <span class=\"author\" itemprop=\"author\">Vogl L.<\/span>, <span class=\"author\" itemprop=\"author\">Jank M.<\/span>, <span class=\"author\" itemprop=\"author\">M\u00e4rz M.<\/span>, <span class=\"author\" itemprop=\"author\">Spiecker E.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/262560817?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Beam-induced heating at low electron fluxes during liquid phase transmission electron microscopy<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_262560817\"><span itemprop=\"name\"><strong>Microscopy and Microanalysis<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_262560817\" \/><span itemprop=\"volumeNumber\">27<\/span><\/span>  (<span itemprop=\"datePublished\">2021<\/span>), p. <span itemprop=\"pagination\">1040-1042<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_262560817\"><span itemprop=\"issn\">ISSN: 1431-9276<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1017\/S1431927621003937' target='blank' itemprop=\"sameAs\">10.1017\/S1431927621003937<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Fritsch B.<\/span>, <span class=\"author\" itemprop=\"author\">Hutzler A.<\/span>, <span class=\"author\" itemprop=\"author\">Wu M.<\/span>, <span class=\"author\" itemprop=\"author\">Vogl L.<\/span>, <span class=\"author\" itemprop=\"author\">Jank MPM.<\/span>, <span class=\"author\" itemprop=\"author\">M\u00e4rz M.<\/span>, <span class=\"author\" itemprop=\"author\">Spiecker E.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/251841129?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Evaluating local temperature changes during liquid cell transmission electron microscopy by in situ parallel beam electron diffraction<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">Virtual Early Career European Microscopy Congress 2020<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Kopenhagen<\/span><\/span>, <span itemprop=\"startDate\" content=\"2020-11-24\">24. November 2020<\/span> - <span itemprop=\"endDate\" content=\"2020-11-26\">26. November 2020<\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"name\" style=\"font-weight:bold\">Proceedings of the European Microscopy Congress 2020<\/span> <span itemprop=\"datePublished\">2021<\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.22443\/rms.emc2020.253' target='blank' itemprop=\"sameAs\">10.22443\/rms.emc2020.253<\/a><br \/>URL: <a href='https:\/\/www.emc2020.eu\/abstract\/evaluating-local-temperature-changes-during-liquid-cell-transmission-electron-microscopy-by-emin-situnbspemparallel-beam-electron-diffraction.html' target='blank' itemprop=\"url\">https:\/\/www.emc2020.eu\/abstract\/evaluating-local-temperature-changes-during-liquid-cell-transmission-electron-microscopy-by-emin-situnbspemparallel-beam-electron-diffraction.html<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Geiling J.<\/span>, <span class=\"author\" itemprop=\"author\">Steinberger M.<\/span>, <span class=\"author\" itemprop=\"author\">Ortner F.<\/span>, <span class=\"author\" itemprop=\"author\">Seyfried R.<\/span>, <span class=\"author\" itemprop=\"author\">Nuss A.<\/span>, <span class=\"author\" itemprop=\"author\">Uhrig F.<\/span>, <span class=\"author\" itemprop=\"author\">Lange C.<\/span>, <span class=\"author\" itemprop=\"author\">Oschsner R.<\/span>, <span class=\"author\" itemprop=\"author\">Wasserscheid P.<\/span>, <span class=\"author\" itemprop=\"author\">M\u00e4rz M.<\/span>, <span class=\"author\" itemprop=\"author\">Preuster P.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/265502856?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Combined dynamic operation of PEM fuel cell and continuous dehydrogenation of perhydro-dibenzyltoluene<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_265502856\"><span itemprop=\"name\"><strong>International Journal of Hydrogen Energy<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_265502856\" \/><span itemprop=\"volumeNumber\">46<\/span><\/span>  (<span itemprop=\"datePublished\">2021<\/span>), p. <span itemprop=\"pagination\">35662-35677<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_265502856\"><span itemprop=\"issn\">ISSN: 0360-3199<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.ijhydene.2021.08.034' target='blank' itemprop=\"sameAs\">10.1016\/j.ijhydene.2021.08.034<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Gerwig M.<\/span>, <span class=\"author\" itemprop=\"author\">Ali AS.<\/span>, <span class=\"author\" itemprop=\"author\">Neubert D.<\/span>, <span class=\"author\" itemprop=\"author\">Polster S.<\/span>, <span class=\"author\" itemprop=\"author\">Bohme U.<\/span>, <span class=\"author\" itemprop=\"author\">Franze G.<\/span>, <span class=\"author\" itemprop=\"author\">Rosenkranz M.<\/span>, <span class=\"author\" itemprop=\"author\">Popov A.<\/span>, <span class=\"author\" itemprop=\"author\">Ponomarev I.<\/span>, <span class=\"author\" itemprop=\"author\">Jank M.<\/span>, <span class=\"author\" itemprop=\"author\">Viehweger C.<\/span>, <span class=\"author\" itemprop=\"author\">Brendler E.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Kroll P.<\/span>, <span class=\"author\" itemprop=\"author\">Kroke E.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/247577386?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">From Cyclopentasilane to Thin-Film Transistors<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_247577386\"><span itemprop=\"name\"><strong>Advanced Electronic Materials<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_247577386\" \/><span itemprop=\"volumeNumber\">7<\/span><\/span>  (<span itemprop=\"datePublished\">2021<\/span>), p. <span itemprop=\"pagination\">1-13<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_247577386\"><span itemprop=\"issn\">ISSN: 2199-160X<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1002\/aelm.202000422' target='blank' itemprop=\"sameAs\">10.1002\/aelm.202000422<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Hirsch A.<\/span>, <span class=\"author\" itemprop=\"author\">Schulze M.<\/span>, <span class=\"author\" itemprop=\"author\">Sturm F.<\/span>, <span class=\"author\" itemprop=\"author\">Trempa M.<\/span>, <span class=\"author\" itemprop=\"author\">Reimann C.<\/span>, <span class=\"author\" itemprop=\"author\">Friedrich J.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/263541898?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Factors influencing the gas bubble evolution and the cristobalite formation in quartz glass Cz crucibles for Czochralski growth of silicon crystals<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_263541898\"><span itemprop=\"name\"><strong>Journal of Crystal Growth<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_263541898\" \/><span itemprop=\"volumeNumber\">570<\/span><\/span>  (<span itemprop=\"datePublished\">2021<\/span>)<br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_263541898\"><span itemprop=\"issn\">ISSN: 0022-0248<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.jcrysgro.2021.126231' target='blank' itemprop=\"sameAs\">10.1016\/j.jcrysgro.2021.126231<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Hutzler A.<\/span>, <span class=\"author\" itemprop=\"author\">Fritsch B.<\/span>, <span class=\"author\" itemprop=\"author\">Branscheid R.<\/span>, <span class=\"author\" itemprop=\"author\">Wu M.<\/span>, <span class=\"author\" itemprop=\"author\">Jank M.<\/span>, <span class=\"author\" itemprop=\"author\">Spiecker E.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/255223718?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Direct Manipulation of Nanostructures Utilizing Donut-Shaped Potential Wells during Liquid-Phase Transmission Electron Microscopy<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">Virtual Early Career European Microscopy Congress 2020<\/span><span itemprop=\"startDate\" content=\"2021\"><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.22443\/rms.emc2020.158' target='blank' itemprop=\"sameAs\">10.22443\/rms.emc2020.158<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Johnsson A.<\/span>, <span class=\"author\" itemprop=\"author\">Schmidt G.<\/span>, <span class=\"author\" itemprop=\"author\">Hauf M.<\/span>, <span class=\"author\" itemprop=\"author\">Pichler P.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/266778596?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">A Review of Platinum Diffusion in Silicon and Its Application for Lifetime Engineering in Power Devices<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_266778596\"><span itemprop=\"name\"><strong>physica status solidi (a)<\/strong><\/span><\/span> (<span itemprop=\"datePublished\">2021<\/span>)<br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_266778596\"><span itemprop=\"issn\">ISSN: 1862-6300<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1002\/pssa.202100462' target='blank' itemprop=\"sameAs\">10.1002\/pssa.202100462<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\">Kaiser Angelika, Ceja Erick Torres, Liu Yujia, Huber Florian, M\u00fcller Raphael, Herr Ulrich, Thonke Klaus:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/359858732?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">H2S sensing for breath analysis with Au functionalized ZnO nanowires<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_359858732\"><span itemprop=\"name\"><strong>Nanotechnology<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_359858732\" \/><span itemprop=\"volumeNumber\">32<\/span><\/span>  (<span itemprop=\"datePublished\">2021<\/span>), p. <span itemprop=\"pagination\">205505<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_359858732\"><span itemprop=\"issn\">ISSN: 1361-6528<\/span><\/span><\/span><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Lehninger D.<\/span>, <span class=\"author\" itemprop=\"author\">Ellinger M.<\/span>, <span class=\"author\" itemprop=\"author\">Ali T.<\/span>, <span class=\"author\" itemprop=\"author\">Li S.<\/span>, <span class=\"author\" itemprop=\"author\">Mertens K.<\/span>, <span class=\"author\" itemprop=\"author\">Lederer M.<\/span>, <span class=\"author\" itemprop=\"author\">Olivio R.<\/span>, <span class=\"author\" itemprop=\"author\">K\u00e4mpfe T.<\/span>, <span class=\"author\" itemprop=\"author\">Hanisch N.<\/span>, <span class=\"author\" itemprop=\"author\">Biedermann K.<\/span>, <span class=\"author\" itemprop=\"author\">Rudolph M.<\/span>, <span class=\"author\" itemprop=\"author\">Brackmann V.<\/span>, <span class=\"author\" itemprop=\"author\">Sanctis S.<\/span>, <span class=\"author\" itemprop=\"author\">Jank M.<\/span>, <span class=\"author\" itemprop=\"author\">Seidel K.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/258804555?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">A Fully Integrated Ferroelectric Thin-Film-Transistor \u2013 Influence of Device Scaling on Threshold Voltage Compensation in Displays<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_258804555\"><span itemprop=\"name\"><strong>Advanced Electronic Materials<\/strong><\/span><\/span> (<span itemprop=\"datePublished\">2021<\/span>)<br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_258804555\"><span itemprop=\"issn\">ISSN: 2199-160X<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1002\/aelm.202100082' target='blank' itemprop=\"sameAs\">10.1002\/aelm.202100082<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Mei\u00dfner E.<\/span>, <span class=\"author\" itemprop=\"author\">Besend\u00f6rfer S.<\/span>, <span class=\"author\" itemprop=\"author\">Faraji S.<\/span>, <span class=\"author\" itemprop=\"author\">Bahat-Treidel E.<\/span>, <span class=\"author\" itemprop=\"author\">W\u00fcrfl J.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/265781411?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">The long journey from crystal growth to power devices, the role of materials development for III-Nitride semiconductors<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">2021 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2021<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Virtual, Online<\/span><\/span>, <span itemprop=\"startDate\" content=\"2021-05-03\">3. May 2021<\/span> - <span itemprop=\"endDate\" content=\"2021-05-07\">7. May 2021<\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"name\" style=\"font-weight:bold\">PCIM Europe Conference Proceedings<\/span> <span itemprop=\"datePublished\">2021<\/span><\/span><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Mei\u00dfner E.<\/span>, <span class=\"author\" itemprop=\"author\">Jockel D.<\/span>, <span class=\"author\" itemprop=\"author\">Koch M.<\/span>, <span class=\"author\" itemprop=\"author\">Niewa R.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/251059784?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">A New Perspective on Growth of GaN from the Basic Ammonothermal Regime<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"author\">Elke Meissner, Rainer Niewa (ed.): <\/span><span itemprop=\"name\"><strong>Ammonothermal Synthesis and Crystal Growth of Nitrides<\/strong><\/span>, <span itemprop=\"publisher\" itemscope itemtype=\"http:\/\/schema.org\/Organization\"><span class=\"city\" itemprop=\"address\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"addressLocality\">Cham<\/span><\/span>: <span itemprop=\"name\">Springer Science and Business Media Deutschland GmbH<\/span><\/span>, <span itemprop=\"datePublished\">2021<\/span>, p. <span itemprop=\"pagination\">77-103<\/span> (Springer Series in Materials Science, Vol.304)<br \/><span itemprop=\"isbn\">ISBN: 978-3-030-56305-9<\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1007\/978-3-030-56305-9_6' target='blank' itemprop=\"sameAs\">10.1007\/978-3-030-56305-9_6<\/a><\/span><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Nagy R.<\/span>, <span class=\"author\" itemprop=\"author\">Dasari DBR.<\/span>, <span class=\"author\" itemprop=\"author\">Babin C.<\/span>, <span class=\"author\" itemprop=\"author\">Liu D.<\/span>, <span class=\"author\" itemprop=\"author\">Vorobyov V.<\/span>, <span class=\"author\" itemprop=\"author\">Niethammer M.<\/span>, <span class=\"author\" itemprop=\"author\">Widmann M.<\/span>, <span class=\"author\" itemprop=\"author\">Linkewitz T.<\/span>, <span class=\"author\" itemprop=\"author\">Gediz I.<\/span>, <span class=\"author\" itemprop=\"author\">Stoehr R.<\/span>, <span class=\"author\" itemprop=\"author\">Weber HB.<\/span>, <span class=\"author\" itemprop=\"author\">Ohshima T.<\/span>, <span class=\"author\" itemprop=\"author\">Ghezellou M.<\/span>, <span class=\"author\" itemprop=\"author\">Son NT.<\/span>, <span class=\"author\" itemprop=\"author\">Ul-Hassan J.<\/span>, <span class=\"author\" itemprop=\"author\">Kaiser F.<\/span>, <span class=\"author\" itemprop=\"author\">Wrachtrup J.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/255269744?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Narrow inhomogeneous distribution of spin-active emitters in silicon carbide<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_255269744\"><span itemprop=\"name\"><strong>Applied Physics Letters<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_255269744\" \/><span itemprop=\"volumeNumber\">118<\/span><\/span>  (<span itemprop=\"datePublished\">2021<\/span>), p. <span itemprop=\"pagination\">144003<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_255269744\"><span itemprop=\"issn\">ISSN: 0003-6951<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1063\/5.0046563' target='blank' itemprop=\"sameAs\">10.1063\/5.0046563<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Rafaja D.<\/span>, <span class=\"author\" itemprop=\"author\">Fischer P.<\/span>, <span class=\"author\" itemprop=\"author\">Barchuk M.<\/span>, <span class=\"author\" itemprop=\"author\">Motylenko M.<\/span>, <span class=\"author\" itemprop=\"author\">Roeder C.<\/span>, <span class=\"author\" itemprop=\"author\">Besendoerfer S.<\/span>, <span class=\"author\" itemprop=\"author\">Mei\u00dfner E.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/261841575?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">X-Ray diffraction analysis and modeling of the depth profile of lattice strains in AlGaN stacks<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_261841575\"><span itemprop=\"name\"><strong>Thin Solid Films<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_261841575\" \/><span itemprop=\"volumeNumber\">732<\/span><\/span>  (<span itemprop=\"datePublished\">2021<\/span>), Article No.: <span itemprop=\"pagination\">138777<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_261841575\"><span itemprop=\"issn\">ISSN: 0040-6090<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.tsf.2021.138777' target='blank' itemprop=\"sameAs\">10.1016\/j.tsf.2021.138777<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">R\u00fchl M.<\/span>, <span class=\"author\" itemprop=\"author\">Lehmeyer J.<\/span>, <span class=\"author\" itemprop=\"author\">Nagy R.<\/span>, <span class=\"author\" itemprop=\"author\">Wei\u00dfer M.<\/span>, <span class=\"author\" itemprop=\"author\">Bockstedte M.<\/span>, <span class=\"author\" itemprop=\"author\">Krieger M.<\/span>, <span class=\"author\" itemprop=\"author\">Weber HB.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/256187164?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Removing the orientational degeneracy of the TS defect in 4H-SiC by electric fields and strain<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_256187164\"><span itemprop=\"name\"><strong>New Journal of Physics<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_256187164\" \/><span itemprop=\"volumeNumber\">23<\/span><\/span>  (<span itemprop=\"datePublished\">2021<\/span>), Article No.: <span itemprop=\"pagination\">073002<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_256187164\"><span itemprop=\"issn\">ISSN: 1367-2630<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1088\/1367-2630\/abfb3e' target='blank' itemprop=\"sameAs\">10.1088\/1367-2630\/abfb3e<\/a><br \/>URL: <a href='https:\/\/iopscience.iop.org\/article\/10.1088\/1367-2630\/abfb3e' target='blank' itemprop=\"url\">https:\/\/iopscience.iop.org\/article\/10.1088\/1367-2630\/abfb3e<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Schimmel S.<\/span>, <span class=\"author\" itemprop=\"author\">Tomida D.<\/span>, <span class=\"author\" itemprop=\"author\">Ishiguro T.<\/span>, <span class=\"author\" itemprop=\"author\">Honda Y.<\/span>, <span class=\"author\" itemprop=\"author\">Chichibu SF.<\/span>, <span class=\"author\" itemprop=\"author\">Amano H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/281256048?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Numerical simulation of ammonothermal crystal growth of GaN-current state, challenges, and prospects<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_281256048\"><span itemprop=\"name\"><strong>Crystals<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_281256048\" \/><span itemprop=\"volumeNumber\">11<\/span><\/span>  (<span itemprop=\"datePublished\">2021<\/span>), Article No.: <span itemprop=\"pagination\">356<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_281256048\"><span itemprop=\"issn\">ISSN: 2073-4352<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.3390\/cryst11040356' target='blank' itemprop=\"sameAs\">10.3390\/cryst11040356<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Schimmel S.<\/span>, <span class=\"author\" itemprop=\"author\">Tomida D.<\/span>, <span class=\"author\" itemprop=\"author\">Saito M.<\/span>, <span class=\"author\" itemprop=\"author\">Bao Q.<\/span>, <span class=\"author\" itemprop=\"author\">Ishiguro T.<\/span>, <span class=\"author\" itemprop=\"author\">Honda Y.<\/span>, <span class=\"author\" itemprop=\"author\">Chichibu SF.<\/span>, <span class=\"author\" itemprop=\"author\">Amano H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/281255650?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Boundary conditions for simulations of fluid flow and temperature field during ammonothermal crystal growth\u2014a machine-learning assisted study of autoclave wall temperature distribution<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_281255650\"><span itemprop=\"name\"><strong>Crystals<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_281255650\" \/><span itemprop=\"volumeNumber\">11<\/span><\/span>  (<span itemprop=\"datePublished\">2021<\/span>), p. <span itemprop=\"pagination\">1-27<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_281255650\"><span itemprop=\"issn\">ISSN: 2073-4352<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.3390\/cryst11030254' target='blank' itemprop=\"sameAs\">10.3390\/cryst11030254<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Schimmel S.<\/span>, <span class=\"author\" itemprop=\"author\">Tomida D.<\/span>, <span class=\"author\" itemprop=\"author\">Saito M.<\/span>, <span class=\"author\" itemprop=\"author\">Bao Q.<\/span>, <span class=\"author\" itemprop=\"author\">Ishiguro T.<\/span>, <span class=\"author\" itemprop=\"author\">Honda Y.<\/span>, <span class=\"author\" itemprop=\"author\">Chichibu SF.<\/span>, <span class=\"author\" itemprop=\"author\">Amano H.<\/span>, <span class=\"author\" itemprop=\"author\">Wellmann P.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/281272709?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Numerical Simulations of Ammonothermal Crystal Growth of GaN and Pathways towards their Experimental Validation<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">Seminar of the Young Crystal Growers (DGKK)<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Berlin<\/span><\/span>, <span itemprop=\"startDate\" content=\"2022-10-05\">5. October 2022<\/span> - <span itemprop=\"endDate\" content=\"2021-10-06\">6. October 2021<\/span>)<\/span><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Schlichting H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/318165066?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Impact of Extended Defects on the Yield and Performance of 4H-SiC Power Devices<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">5th Sino MOS-AK Workshop<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Xi'an<\/span><\/span>, <span itemprop=\"startDate\" content=\"2021-08-11\">11. August 2021<\/span> - <span itemprop=\"endDate\" content=\"2021-08-13\">13. August 2021<\/span>)<\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.5281\/zenodo.5642677' target='blank' itemprop=\"sameAs\">10.5281\/zenodo.5642677<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Schmidt K.<\/span>, <span class=\"author\" itemprop=\"author\">Polzinger B.<\/span>, <span class=\"author\" itemprop=\"author\">Metry M.<\/span>, <span class=\"author\" itemprop=\"author\">Koppe S.<\/span>, <span class=\"author\" itemprop=\"author\">Zimmermann A.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/255365795?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Hybrid Additive Manufacturing by Embedded Electrical Circuits Using 3-D Dispensing<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_255365795\"><span itemprop=\"name\"><strong>IEEE Transactions on Components, Packaging and Manufacturing Technology<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_255365795\" \/><span itemprop=\"volumeNumber\">11<\/span><\/span>  (<span itemprop=\"datePublished\">2021<\/span>), p. <span itemprop=\"pagination\">510-521<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_255365795\"><span itemprop=\"issn\">ISSN: 2156-3950<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/TCPMT.2021.3054835' target='blank' itemprop=\"sameAs\">10.1109\/TCPMT.2021.3054835<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Schnick W.<\/span>, <span class=\"author\" itemprop=\"author\">Cordes N.<\/span>, <span class=\"author\" itemprop=\"author\">Mallmann M.<\/span>, <span class=\"author\" itemprop=\"author\">Niewa R.<\/span>, <span class=\"author\" itemprop=\"author\">Mei\u00dfner E.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/251060284?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Ammonothermal Materials<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"author\">Elke Meissner, Rainer Niewa (ed.): <\/span><span itemprop=\"name\"><strong>Ammonothermal Synthesis and Crystal Growth of Nitrides<\/strong><\/span>, <span itemprop=\"publisher\" itemscope itemtype=\"http:\/\/schema.org\/Organization\"><span class=\"city\" itemprop=\"address\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"addressLocality\">Cham<\/span><\/span>: <span itemprop=\"name\">Springer Science and Business Media Deutschland GmbH<\/span><\/span>, <span itemprop=\"datePublished\">2021<\/span>, p. <span itemprop=\"pagination\">329-336<\/span> (Springer Series in Materials Science, Vol.304)<\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1007\/978-3-030-56305-9_18' target='blank' itemprop=\"sameAs\">10.1007\/978-3-030-56305-9_18<\/a><\/span><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Taherkhani M.<\/span>, <span class=\"author\" itemprop=\"author\">Fritsch B.<\/span>, <span class=\"author\" itemprop=\"author\">Jank M.<\/span>, <span class=\"author\" itemprop=\"author\">Spiecker E.<\/span>, <span class=\"author\" itemprop=\"author\">Hutzler A.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/267018706?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Modelling the Radiolysis of Silver Nitrate Solutions in presence of Bromide Ions in Liquid-Phase Transmission Electron Microscopy<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_267018706\"><span itemprop=\"name\"><strong>Microscopy and Microanalysis<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_267018706\" \/><span itemprop=\"volumeNumber\">27<\/span><\/span>  (<span itemprop=\"datePublished\">2021<\/span>), p. <span itemprop=\"pagination\">103-104<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_267018706\"><span itemprop=\"issn\">ISSN: 1431-9276<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1017\/S1431927621013519' target='blank' itemprop=\"sameAs\">10.1017\/S1431927621013519<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Toumi S.<\/span>, <span class=\"author\" itemprop=\"author\">Ouennoughi Z.<\/span>, <span class=\"author\" itemprop=\"author\">Wei\u00df R.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/262965190?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Temperature analysis of the Gaussian distribution modeling the barrier height inhomogeneity in the Tungsten\/4H-SiC Schottky diode<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_262965190\"><span itemprop=\"name\"><strong>Applied Physics A: Materials Science and Processing<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_262965190\" \/><span itemprop=\"volumeNumber\">127<\/span><\/span>  (<span itemprop=\"datePublished\">2021<\/span>), Article No.: <span itemprop=\"pagination\">661<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_262965190\"><span itemprop=\"issn\">ISSN: 0947-8396<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1007\/s00339-021-04787-0' target='blank' itemprop=\"sameAs\">10.1007\/s00339-021-04787-0<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Yu Z.<\/span>, <span class=\"author\" itemprop=\"author\">Xu T.<\/span>, <span class=\"author\" itemprop=\"author\">Letz S.<\/span>, <span class=\"author\" itemprop=\"author\">Bayer CF.<\/span>, <span class=\"author\" itemprop=\"author\">Schletz A.<\/span>, <span class=\"author\" itemprop=\"author\">M\u00e4rz M.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/267254134?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Automated quantitative analysis of void morphology evolution in Ag[sbnd]Ag direct bonding interface after accelerated aging<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_267254134\"><span itemprop=\"name\"><strong>Microelectronics Reliability<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_267254134\" \/><span itemprop=\"volumeNumber\">126<\/span><\/span>  (<span itemprop=\"datePublished\">2021<\/span>), Article No.: <span itemprop=\"pagination\">114285<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_267254134\"><span itemprop=\"issn\">ISSN: 0026-2714<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.microrel.2021.114285' target='blank' itemprop=\"sameAs\">10.1016\/j.microrel.2021.114285<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Yu Z.<\/span>, <span class=\"author\" itemprop=\"author\">Yu Z.<\/span>, <span class=\"author\" itemprop=\"author\">Tan YZ.<\/span>, <span class=\"author\" itemprop=\"author\">Bayer CF.<\/span>, <span class=\"author\" itemprop=\"author\">Rauh H.<\/span>, <span class=\"author\" itemprop=\"author\">Schletz A.<\/span>, <span class=\"author\" itemprop=\"author\">M\u00e4rz M.<\/span>, <span class=\"author\" itemprop=\"author\">Birlem O.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/276488206?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Cu-Cu Thermocompression Bonding with Cu-Nanowire Films for Power Semiconductor Die-Attach on DBC Substrates<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">23rd IEEE Electronics Packaging Technology Conference, EPTC 2021<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Virtual, Online, SGP<\/span><\/span>, <span itemprop=\"startDate\" content=\"2021-12-01\">1. December 2021<\/span> - <span itemprop=\"endDate\" content=\"2021-12-30\">30. December 2021<\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"name\" style=\"font-weight:bold\">2021 IEEE 23rd Electronics Packaging Technology Conference, EPTC 2021<\/span> <span itemprop=\"datePublished\">2021<\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/EPTC53413.2021.9663890' target='blank' itemprop=\"sameAs\">10.1109\/EPTC53413.2021.9663890<\/a><\/li><\/ul><h3>2020<\/h3><ul class=\"cris-publications \" lang=\"en\"><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Albrecht M.<\/span>, <span class=\"author\" itemprop=\"author\">Kl\u00fcpfel F.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/235052460?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">An Iterative Surface Potential Algorithm Including Interface Traps for Compact Modeling of SiC-MOSFETs<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_235052460\"><span itemprop=\"name\"><strong>IEEE Transactions on Electron Devices<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_235052460\" \/><span itemprop=\"volumeNumber\">67<\/span><\/span>  (<span itemprop=\"datePublished\">2020<\/span>), p. <span itemprop=\"pagination\">855-862<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_235052460\"><span itemprop=\"issn\">ISSN: 0018-9383<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/TED.2020.2967507' target='blank' itemprop=\"sameAs\">10.1109\/TED.2020.2967507<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Albrecht M.<\/span>, <span class=\"author\" itemprop=\"author\">P\u00e9rez D.<\/span>, <span class=\"author\" itemprop=\"author\">Martens R.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer AJ.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/242203489?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Impact of channel implantation on a 4h-sic cmos operational amplifier for high temperature applications<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">18th International Conference on Silicon Carbide and Related Materials, ICSCRM 2019<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Kyoto<\/span><\/span>, <span itemprop=\"startDate\" content=\"2019-09-29\">29. September 2019<\/span> - <span itemprop=\"endDate\" content=\"2019-10-04\">4. October 2019<\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"author\">Hiroshi Yano, Takeshi Ohshima, Kazuma Eto, Takeshi Mitani, Shinsuke Harada, Yasunori Tanaka (ed.): <\/span><span itemprop=\"name\" style=\"font-weight:bold\">Materials Science Forum<\/span> <span itemprop=\"datePublished\">2020<\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4028\/www.scientific.net\/MSF.1004.1123' target='blank' itemprop=\"sameAs\">10.4028\/www.scientific.net\/MSF.1004.1123<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Bejenari I.<\/span>, <span class=\"author\" itemprop=\"author\">Burenkov A.<\/span>, <span class=\"author\" itemprop=\"author\">Pichler P.<\/span>, <span class=\"author\" itemprop=\"author\">Deretzis I.<\/span>, <span class=\"author\" itemprop=\"author\">La Magna A.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/245890082?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Molecular dynamics modeling of the radial heat transfer from silicon nanowires<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">2020 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2020<\/span> (, <span itemprop=\"startDate\" content=\"2020-09-03\">3. September 2020<\/span> - <span itemprop=\"endDate\" content=\"2020-10-06\">6. October 2020<\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"name\" style=\"font-weight:bold\">International Conference on Simulation of Semiconductor Processes and Devices, SISPAD<\/span> <span itemprop=\"datePublished\">2020<\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.23919\/SISPAD49475.2020.9241646' target='blank' itemprop=\"sameAs\">10.23919\/SISPAD49475.2020.9241646<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Besend\u00f6rfer S.<\/span>, <span class=\"author\" itemprop=\"author\">Mei\u00dfner E.<\/span>, <span class=\"author\" itemprop=\"author\">Medjdoub F.<\/span>, <span class=\"author\" itemprop=\"author\">Derluyn J.<\/span>, <span class=\"author\" itemprop=\"author\">Friedrich J.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/244294794?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">The impact of dislocations on AlGaN\/GaN Schottky diodes and on gate failure of high electron mobility transistors<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_244294794\"><span itemprop=\"name\"><strong>Scientific Reports<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_244294794\" \/><span itemprop=\"volumeNumber\">10<\/span><\/span>  (<span itemprop=\"datePublished\">2020<\/span>), Article No.: <span itemprop=\"pagination\">17252<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_244294794\"><span itemprop=\"issn\">ISSN: 2045-2322<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1038\/s41598-020-73977-2' target='blank' itemprop=\"sameAs\">10.1038\/s41598-020-73977-2<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Besend\u00f6rfer S.<\/span>, <span class=\"author\" itemprop=\"author\">Mei\u00dfner E.<\/span>, <span class=\"author\" itemprop=\"author\">Tajalli A.<\/span>, <span class=\"author\" itemprop=\"author\">Meneghini M.<\/span>, <span class=\"author\" itemprop=\"author\">Freitas JA.<\/span>, <span class=\"author\" itemprop=\"author\">Derluyn J.<\/span>, <span class=\"author\" itemprop=\"author\">Medjdoub F.<\/span>, <span class=\"author\" itemprop=\"author\">Meneghesso G.<\/span>, <span class=\"author\" itemprop=\"author\">Friedrich J.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/232903543?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Vertical breakdown of GaN on Si due to V-pits<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_232903543\"><span itemprop=\"name\"><strong>Journal of Applied Physics<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_232903543\" \/><span itemprop=\"volumeNumber\">127<\/span><\/span>  (<span itemprop=\"datePublished\">2020<\/span>), Article No.: <span itemprop=\"pagination\">015701<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_232903543\"><span itemprop=\"issn\">ISSN: 0021-8979<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1063\/1.5129248' target='blank' itemprop=\"sameAs\">10.1063\/1.5129248<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Besend\u00f6rfer S.<\/span>, <span class=\"author\" itemprop=\"author\">Mei\u00dfner E.<\/span>, <span class=\"author\" itemprop=\"author\">Zweipfennig T.<\/span>, <span class=\"author\" itemprop=\"author\">Yacoub H.<\/span>, <span class=\"author\" itemprop=\"author\">Fahle D.<\/span>, <span class=\"author\" itemprop=\"author\">Behmenburg H.<\/span>, <span class=\"author\" itemprop=\"author\">Kalisch H.<\/span>, <span class=\"author\" itemprop=\"author\">Vescan A.<\/span>, <span class=\"author\" itemprop=\"author\">Friedrich J.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/237940203?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_237940203\"><span itemprop=\"name\"><strong>AIP Advances<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_237940203\" \/><span itemprop=\"volumeNumber\">10<\/span><\/span>  (<span itemprop=\"datePublished\">2020<\/span>), Article No.: <span itemprop=\"pagination\">045028<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_237940203\"><span itemprop=\"issn\">ISSN: 2158-3226<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1063\/1.5141905' target='blank' itemprop=\"sameAs\">10.1063\/1.5141905<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Boettcher N.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/255629860?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Design Considerations on a Monolithically Integrated, Self Controlled and Regenerative 900 V SiC Circuit Breaker<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Suita<\/span><\/span>, <span itemprop=\"startDate\" content=\"2020-09-23\">23. September 2020<\/span> - <span itemprop=\"endDate\" content=\"2020-09-25\">25. September 2020<\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"name\" style=\"font-weight:bold\">2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2020<\/span> <span itemprop=\"datePublished\">2020<\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/WiPDAAsia49671.2020.9360279' target='blank' itemprop=\"sameAs\">10.1109\/WiPDAAsia49671.2020.9360279<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Di Benedetto L.<\/span>, <span class=\"author\" itemprop=\"author\">Licciardo GD.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer AJ.<\/span>, <span class=\"author\" itemprop=\"author\">Rubino A.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/232032551?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">A 4H-SiC UV Phototransistor with Excellent Optical Gain Based on Controlled Potential Barrier<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_232032551\"><span itemprop=\"name\"><strong>IEEE Transactions on Electron Devices<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_232032551\" \/><span itemprop=\"volumeNumber\">67<\/span><\/span>  (<span itemprop=\"datePublished\">2020<\/span>), p. <span itemprop=\"pagination\">154-159<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_232032551\"><span itemprop=\"issn\">ISSN: 0018-9383<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/TED.2019.2950986' target='blank' itemprop=\"sameAs\">10.1109\/TED.2019.2950986<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Faraji S.<\/span>, <span class=\"author\" itemprop=\"author\">Mei\u00dfner E.<\/span>, <span class=\"author\" itemprop=\"author\">Weing\u00e4rtner R.<\/span>, <span class=\"author\" itemprop=\"author\">Besend\u00f6rfer S.<\/span>, <span class=\"author\" itemprop=\"author\">Friedrich J.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/246689528?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">In-situ preparation of gan sacrificial layers on sapphire substrate in movpe reactor for self-separation of the overgrown gan crystal<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_246689528\"><span itemprop=\"name\"><strong>Crystals<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_246689528\" \/><span itemprop=\"volumeNumber\">10<\/span><\/span>  (<span itemprop=\"datePublished\">2020<\/span>), p. <span itemprop=\"pagination\">1-11<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_246689528\"><span itemprop=\"issn\">ISSN: 2073-4352<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.3390\/cryst10121100' target='blank' itemprop=\"sameAs\">10.3390\/cryst10121100<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Hellinger C.<\/span>, <span class=\"author\" itemprop=\"author\">Rusch O.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer AJ.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/243323177?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Low-resistance ohmic contact formation by laser annealing of N-implanted 4H-SiC<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"author\">Hiroshi Yano, Takeshi Ohshima, Kazuma Eto, Takeshi Mitani, Shinsuke Harada, Yasunori Tanaka (ed.): <\/span><span itemprop=\"name\" style=\"font-weight:bold\">Materials Science Forum<\/span> <span itemprop=\"datePublished\">2020<\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4028\/www.scientific.net\/MSF.1004.718' target='blank' itemprop=\"sameAs\">10.4028\/www.scientific.net\/MSF.1004.718<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Hessler S.<\/span>, <span class=\"author\" itemprop=\"author\">Knopf S.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Girschikofsky M.<\/span>, <span class=\"author\" itemprop=\"author\">Schmau\u00df B.<\/span>, <span class=\"author\" itemprop=\"author\">Hellmann R.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/244617742?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Advancing the sensitivity of integrated epoxy-based Bragg grating refractometry by high-index nanolayers<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_244617742\"><span itemprop=\"name\"><strong>Optics Letters<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_244617742\" \/><span itemprop=\"volumeNumber\">45<\/span><\/span>  (<span itemprop=\"datePublished\">2020<\/span>), p. <span itemprop=\"pagination\">5510-5513<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_244617742\"><span itemprop=\"issn\">ISSN: 0146-9592<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1364\/OL.402768' target='blank' itemprop=\"sameAs\">10.1364\/OL.402768<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Hutzler A.<\/span>, <span class=\"author\" itemprop=\"author\">Fritsch B.<\/span>, <span class=\"author\" itemprop=\"author\">Matthus C.<\/span>, <span class=\"author\" itemprop=\"author\">Jank MPM.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/238796286?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Highly Accurate Determination of Heterogeneously Stacked Van-der-Waals Materials by Optical Microspectroscopy<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_238796286\"><span itemprop=\"name\"><strong>Scientific Reports<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_238796286\" \/><span itemprop=\"volumeNumber\">10<\/span><\/span>  (<span itemprop=\"datePublished\">2020<\/span>), Article No.: <span itemprop=\"pagination\">13676<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_238796286\"><span itemprop=\"issn\">ISSN: 2045-2322<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1038\/s41598-020-70580-3' target='blank' itemprop=\"sameAs\">10.1038\/s41598-020-70580-3<\/a><br \/>URL: <a href='https:\/\/www.nature.com\/articles\/s41598-020-70580-3' target='blank' itemprop=\"url\">https:\/\/www.nature.com\/articles\/s41598-020-70580-3<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Kazantsev D.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/237182517?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">ASNOM mapping of SiC epilayer doping profile and of surface phonon polariton waveguiding<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_237182517\"><span itemprop=\"name\"><strong>Journal of Applied Physics<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_237182517\" \/><span itemprop=\"volumeNumber\">127<\/span><\/span>  (<span itemprop=\"datePublished\">2020<\/span>)<br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_237182517\"><span itemprop=\"issn\">ISSN: 0021-8979<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1063\/1.5128104' target='blank' itemprop=\"sameAs\">10.1063\/1.5128104<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Kocher M.<\/span>, <span class=\"author\" itemprop=\"author\">Schlichting H.<\/span>, <span class=\"author\" itemprop=\"author\">Kallinger B.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer AJ.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/242203233?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Influence of shallow pits and device design of 4H-SiC VDMOS transistors on in-line defect analysis by photoluminescence and differential interference contrast mapping<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">18th International Conference on Silicon Carbide and Related Materials, ICSCRM 2019<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Kyoto<\/span><\/span>, <span itemprop=\"startDate\" content=\"2019-09-29\">29. September 2019<\/span> - <span itemprop=\"endDate\" content=\"2019-10-04\">4. October 2019<\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"author\">Hiroshi Yano, Takeshi Ohshima, Kazuma Eto, Takeshi Mitani, Shinsuke Harada, Yasunori Tanaka (ed.): <\/span><span itemprop=\"name\" style=\"font-weight:bold\">Materials Science Forum<\/span> <span itemprop=\"datePublished\">2020<\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4028\/www.scientific.net\/MSF.1004.299' target='blank' itemprop=\"sameAs\">10.4028\/www.scientific.net\/MSF.1004.299<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Morioka N.<\/span>, <span class=\"author\" itemprop=\"author\">Babin C.<\/span>, <span class=\"author\" itemprop=\"author\">Nagy R.<\/span>, <span class=\"author\" itemprop=\"author\">Gediz I.<\/span>, <span class=\"author\" itemprop=\"author\">Hesselmeier E.<\/span>, <span class=\"author\" itemprop=\"author\">Liu D.<\/span>, <span class=\"author\" itemprop=\"author\">Joliffe M.<\/span>, <span class=\"author\" itemprop=\"author\">Niethammer M.<\/span>, <span class=\"author\" itemprop=\"author\">Dasari D.<\/span>, <span class=\"author\" itemprop=\"author\">Vorobyov V.<\/span>, <span class=\"author\" itemprop=\"author\">Kolesov R.<\/span>, <span class=\"author\" itemprop=\"author\">Stoehr R.<\/span>, <span class=\"author\" itemprop=\"author\">Ul-Hassan J.<\/span>, <span class=\"author\" itemprop=\"author\">Nguyen Tien Son .<\/span>, <span class=\"author\" itemprop=\"author\">Ohshima T.<\/span>, <span class=\"author\" itemprop=\"author\">Udvarhelyi P.<\/span>, <span class=\"author\" itemprop=\"author\">Thiering G.<\/span>, <span class=\"author\" itemprop=\"author\">Gali A.<\/span>, <span class=\"author\" itemprop=\"author\">Wrachtrup J.<\/span>, <span class=\"author\" itemprop=\"author\">Kaiser F.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/244626453?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_244626453\"><span itemprop=\"name\"><strong>Nature Communications<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_244626453\" \/><span itemprop=\"volumeNumber\">11<\/span><\/span>  (<span itemprop=\"datePublished\">2020<\/span>), Article No.: <span itemprop=\"pagination\">2516<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_244626453\"><span itemprop=\"issn\">ISSN: 2041-1723<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1038\/s41467-020-16330-5' target='blank' itemprop=\"sameAs\">10.1038\/s41467-020-16330-5<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Rickert L.<\/span>, <span class=\"author\" itemprop=\"author\">Fritsch B.<\/span>, <span class=\"author\" itemprop=\"author\">Kors A.<\/span>, <span class=\"author\" itemprop=\"author\">Reithmaier JP.<\/span>, <span class=\"author\" itemprop=\"author\">Benyoucef M.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/261388566?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Mode properties of telecom wavelength InP-based high-(Q\/V) L4\/3 photonic crystal cavities<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_261388566\"><span itemprop=\"name\"><strong>Nanotechnology<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_261388566\" \/><span itemprop=\"volumeNumber\">31<\/span><\/span>  (<span itemprop=\"datePublished\">2020<\/span>), Article No.: <span itemprop=\"pagination\">315703<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_261388566\"><span itemprop=\"issn\">ISSN: 1361-6528<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1088\/1361-6528\/ab8a8c' target='blank' itemprop=\"sameAs\">10.1088\/1361-6528\/ab8a8c<\/a><br \/>URL: <a href='https:\/\/iopscience.iop.org\/article\/10.1088\/1361-6528\/ab8a8c' target='blank' itemprop=\"url\">https:\/\/iopscience.iop.org\/article\/10.1088\/1361-6528\/ab8a8c<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Rusch O.<\/span>, <span class=\"author\" itemprop=\"author\">Hellinger C.<\/span>, <span class=\"author\" itemprop=\"author\">Moult J.<\/span>, <span class=\"author\" itemprop=\"author\">Corcoran Y.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/242203745?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Reducing on-resistance for SiC diodes by thin wafer and laser anneal technology<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">18th International Conference on Silicon Carbide and Related Materials, ICSCRM 2019<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Kyoto<\/span><\/span>, <span itemprop=\"startDate\" content=\"2019-09-29\">29. September 2019<\/span> - <span itemprop=\"endDate\" content=\"2019-10-04\">4. October 2019<\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"author\">Hiroshi Yano, Takeshi Ohshima, Kazuma Eto, Takeshi Mitani, Shinsuke Harada, Yasunori Tanaka (ed.): <\/span><span itemprop=\"name\" style=\"font-weight:bold\">Materials Science Forum<\/span> <span itemprop=\"datePublished\">2020<\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4028\/www.scientific.net\/MSF.1004.155' target='blank' itemprop=\"sameAs\">10.4028\/www.scientific.net\/MSF.1004.155<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Toumi S.<\/span>, <span class=\"author\" itemprop=\"author\">Ouennoughi Z.<\/span>, <span class=\"author\" itemprop=\"author\">Murakami K.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/237177837?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Effect of temperature on the Fowler-Nordheim barrier height, flat band potentials and electron\/hole effective masses in the MOS capacitors<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_237177837\"><span itemprop=\"name\"><strong>Physica B-Condensed Matter<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_237177837\" \/><span itemprop=\"volumeNumber\">585<\/span><\/span>  (<span itemprop=\"datePublished\">2020<\/span>), Article No.: <span itemprop=\"pagination\">412125<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_237177837\"><span itemprop=\"issn\">ISSN: 0921-4526<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.physb.2020.412125' target='blank' itemprop=\"sameAs\">10.1016\/j.physb.2020.412125<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Wankerl H.<\/span>, <span class=\"author\" itemprop=\"author\">Stern M.<\/span>, <span class=\"author\" itemprop=\"author\">Altieri-Weimar P.<\/span>, <span class=\"author\" itemprop=\"author\">Al-Baddai S.<\/span>, <span class=\"author\" itemprop=\"author\">Lang KJ.<\/span>, <span class=\"author\" itemprop=\"author\">Roider F.<\/span>, <span class=\"author\" itemprop=\"author\">Lang EW.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/241255715?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Fully convolutional networks for void segmentation in X-ray images of solder joints<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_241255715\"><span itemprop=\"name\"><strong>Journal of Manufacturing Processes<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_241255715\" \/><span itemprop=\"volumeNumber\">57<\/span><\/span>  (<span itemprop=\"datePublished\">2020<\/span>), p. <span itemprop=\"pagination\">762-767<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_241255715\"><span itemprop=\"issn\">ISSN: 1526-6125<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.jmapro.2020.07.021' target='blank' itemprop=\"sameAs\">10.1016\/j.jmapro.2020.07.021<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Wei\u00dfe J.<\/span>, <span class=\"author\" itemprop=\"author\">Matthus C.<\/span>, <span class=\"author\" itemprop=\"author\">Schlichting H.<\/span>, <span class=\"author\" itemprop=\"author\">Mitlehner H.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/241525230?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">RESURF n-LDMOS Transistor for Advanced Integrated Circuits in 4H-SiC<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_241525230\"><span itemprop=\"name\"><strong>IEEE Transactions on Electron Devices<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_241525230\" \/><span itemprop=\"volumeNumber\">67<\/span><\/span>  (<span itemprop=\"datePublished\">2020<\/span>), p. <span itemprop=\"pagination\">3278-3284<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_241525230\"><span itemprop=\"issn\">ISSN: 0018-9383<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/TED.2020.3002730' target='blank' itemprop=\"sameAs\">10.1109\/TED.2020.3002730<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Wicht T.<\/span>, <span class=\"author\" itemprop=\"author\">Mueller S.<\/span>, <span class=\"author\" itemprop=\"author\">Weingaertner R.<\/span>, <span class=\"author\" itemprop=\"author\">Epelbaum B.<\/span>, <span class=\"author\" itemprop=\"author\">Besendoerfer S.<\/span>, <span class=\"author\" itemprop=\"author\">Bl\u00e4\u00df U.<\/span>, <span class=\"author\" itemprop=\"author\">Wei\u00dfer M.<\/span>, <span class=\"author\" itemprop=\"author\">Unruh T.<\/span>, <span class=\"author\" itemprop=\"author\">Mei\u00dfner E.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/242002119?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">X-ray characterization of physical-vapor-transport-grown bulk AlN single crystals<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_242002119\"><span itemprop=\"name\"><strong>Journal of Applied Crystallography<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_242002119\" \/><span itemprop=\"volumeNumber\">53<\/span><\/span>  (<span itemprop=\"datePublished\">2020<\/span>), p. <span itemprop=\"pagination\">1080-1086<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_242002119\"><span itemprop=\"issn\">ISSN: 0021-8898<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1107\/S1600576720008961' target='blank' itemprop=\"sameAs\">10.1107\/S1600576720008961<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Yu Z.<\/span>, <span class=\"author\" itemprop=\"author\">Zeng W.<\/span>, <span class=\"author\" itemprop=\"author\">Zhao D.<\/span>, <span class=\"author\" itemprop=\"author\">Zhang Z.<\/span>, <span class=\"author\" itemprop=\"author\">Bayer CF.<\/span>, <span class=\"author\" itemprop=\"author\">Schletz A.<\/span>, <span class=\"author\" itemprop=\"author\">M\u00e4rz M.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/246375492?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Reliability of silver direct bonding in thermal cycling tests<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">8th IEEE Electronics System-Integration Technology Conference, ESTC 2020<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Tonsberg, Vestfold<\/span><\/span>, <span itemprop=\"startDate\" content=\"2020-09-15\">15. September 2020<\/span> - <span itemprop=\"endDate\" content=\"2020-09-18\">18. September 2020<\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"name\" style=\"font-weight:bold\">Proceedings - 2020 IEEE 8th Electronics System-Integration Technology Conference, ESTC 2020<\/span> <span itemprop=\"datePublished\">2020<\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/ESTC48849.2020.9229753' target='blank' itemprop=\"sameAs\">10.1109\/ESTC48849.2020.9229753<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Zhao D.<\/span>, <span class=\"author\" itemprop=\"author\">Letz S.<\/span>, <span class=\"author\" itemprop=\"author\">Schletz A.<\/span>, <span class=\"author\" itemprop=\"author\">M\u00e4rz M.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/240054873?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">A Method for the Characterization of Adhesion Strength Degradation of Thin Films on Si-Substrate under thermal cycling test<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">2020 CIPS<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Berlin<\/span><\/span>, <span itemprop=\"startDate\" content=\"2020-03-24\">24. March 2020<\/span> - <span itemprop=\"endDate\" content=\"2020-03-26\">26. March 2020<\/span>)<\/span><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Zhao D.<\/span>, <span class=\"author\" itemprop=\"author\">Letz S.<\/span>, <span class=\"author\" itemprop=\"author\">Yu Z.<\/span>, <span class=\"author\" itemprop=\"author\">Schletz A.<\/span>, <span class=\"author\" itemprop=\"author\">M\u00e4rz M.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/259741631?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Combined experimental and numerical approach for investigating the mechanical degradation of the interface between thin film metallization and Si-substrate after temperature cycling test<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_259741631\"><span itemprop=\"name\"><strong>Microelectronics Reliability<\/strong><\/span><\/span> (<span itemprop=\"datePublished\">2020<\/span>)<br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_259741631\"><span itemprop=\"issn\">ISSN: 0026-2714<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.microrel.2020.113785' target='blank' itemprop=\"sameAs\">10.1016\/j.microrel.2020.113785<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Zhao Y.<\/span>, <span class=\"author\" itemprop=\"author\">Miao P.<\/span>, <span class=\"author\" itemprop=\"author\">Elia J.<\/span>, <span class=\"author\" itemprop=\"author\">Hu H.<\/span>, <span class=\"author\" itemprop=\"author\">Wang X.<\/span>, <span class=\"author\" itemprop=\"author\">Heum\u00fcller T.<\/span>, <span class=\"author\" itemprop=\"author\">Hou Y.<\/span>, <span class=\"author\" itemprop=\"author\">Matt G.<\/span>, <span class=\"author\" itemprop=\"author\">Osvet A.<\/span>, <span class=\"author\" itemprop=\"author\">Chen YT.<\/span>, <span class=\"author\" itemprop=\"author\">Tarrag\u00f3 M.<\/span>, <span class=\"author\" itemprop=\"author\">de Ligny D.<\/span>, <span class=\"author\" itemprop=\"author\">Przybilla T.<\/span>, <span class=\"author\" itemprop=\"author\">Denninger P.<\/span>, <span class=\"author\" itemprop=\"author\">Will J.<\/span>, <span class=\"author\" itemprop=\"author\">Zhang J.<\/span>, <span class=\"author\" itemprop=\"author\">Tang X.<\/span>, <span class=\"author\" itemprop=\"author\">Li N.<\/span>, <span class=\"author\" itemprop=\"author\">He C.<\/span>, <span class=\"author\" itemprop=\"author\">Pan A.<\/span>, <span class=\"author\" itemprop=\"author\">Meixner AJ.<\/span>, <span class=\"author\" itemprop=\"author\">Spiecker E.<\/span>, <span class=\"author\" itemprop=\"author\">Zhang D.<\/span>, <span class=\"author\" itemprop=\"author\">Brabec C.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/246729220?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Strain-activated light-induced halide segregation in mixed-halide perovskite solids<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_246729220\"><span itemprop=\"name\"><strong>Nature Communications<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_246729220\" \/><span itemprop=\"volumeNumber\">11<\/span><\/span>  (<span itemprop=\"datePublished\">2020<\/span>), Article No.: <span itemprop=\"pagination\">6328<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_246729220\"><span itemprop=\"issn\">ISSN: 2041-1723<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1038\/s41467-020-20066-7' target='blank' itemprop=\"sameAs\">10.1038\/s41467-020-20066-7<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Zimmermann V.<\/span>, <span class=\"author\" itemprop=\"author\">Z\u00f6rner A.<\/span>, <span class=\"author\" itemprop=\"author\">Chen W.<\/span>, <span class=\"author\" itemprop=\"author\">Yu Z.<\/span>, <span class=\"author\" itemprop=\"author\">Jank M.<\/span>, <span class=\"author\" itemprop=\"author\">Bayer C.<\/span>, <span class=\"author\" itemprop=\"author\">Schletz A.<\/span>, <span class=\"author\" itemprop=\"author\">M\u00e4rz M.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/255656297?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Integration of printed electronics with potted power electronic modules<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">11th International Conference on Integrated Power Electronics Systems, CIPS 2020<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Berlin<\/span><\/span>, <span itemprop=\"startDate\" content=\"2020-03-24\">24. March 2020<\/span> - <span itemprop=\"endDate\" content=\"2020-03-26\">26. March 2020<\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"name\" style=\"font-weight:bold\">CIPS 2020 - 11th International Conference on Integrated Power Electronics Systems<\/span> <span itemprop=\"datePublished\">2020<\/span><\/span><\/li><\/ul><h3>2019<\/h3><ul class=\"cris-publications \" lang=\"en\"><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Albrecht M.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/228220198?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Improving 5V digital 4H-SIC CMOS ics for operating at 400\u00b0C using PMOS channel implantation<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_228220198\"><span itemprop=\"name\"><strong>Materials Science Forum<\/strong><\/span><\/span> (<span itemprop=\"datePublished\">2019<\/span>), p. <span itemprop=\"pagination\">827-831<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_228220198\"><span itemprop=\"issn\">ISSN: 0255-5476<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4028\/www.scientific.net\/MSF.963.827' target='blank' itemprop=\"sameAs\">10.4028\/www.scientific.net\/MSF.963.827<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Beljakowa S.<\/span>, <span class=\"author\" itemprop=\"author\">Pichler P.<\/span>, <span class=\"author\" itemprop=\"author\">Kalkofen B.<\/span>, <span class=\"author\" itemprop=\"author\">H\u00fcbner R.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/224752184?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Diffusion of Phosphorus and Boron from Atomic Layer Deposition Oxides into Silicon<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_224752184\"><span itemprop=\"name\"><strong>physica status solidi (a)<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_224752184\" \/><span itemprop=\"volumeNumber\">216<\/span><\/span>  (<span itemprop=\"datePublished\">2019<\/span>), Article No.: <span itemprop=\"pagination\">1900306<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_224752184\"><span itemprop=\"issn\">ISSN: 1862-6300<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1002\/pssa.201900306' target='blank' itemprop=\"sameAs\">10.1002\/pssa.201900306<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Boettcher N.<\/span>, <span class=\"author\" itemprop=\"author\">Heckel T.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>, <span class=\"author\" itemprop=\"author\">Pelaic K.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/227174572?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Silicon RC-Snubber for 900 V Applications Utilising non-Stoichiometric Silicon Nitride<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">31st IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Shanghai<\/span><\/span>, <span itemprop=\"startDate\" content=\"2019-05-19\">19. May 2019<\/span> - <span itemprop=\"endDate\" content=\"2019-05-23\">23. May 2019<\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"name\" style=\"font-weight:bold\">31st International Symposium on Power Semiconductor Devices & ICs<\/span>, <span itemprop=\"publisher\" itemscope itemtype=\"http:\/\/schema.org\/Organization\"><span class=\"city\" itemprop=\"address\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"addressLocality\">NEW YORK<\/span><\/span>: <\/span> <span itemprop=\"datePublished\">2019<\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/ISPSD.2019.8757589' target='blank' itemprop=\"sameAs\">10.1109\/ISPSD.2019.8757589<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Chen YC.<\/span>, <span class=\"author\" itemprop=\"author\">Salter PS.<\/span>, <span class=\"author\" itemprop=\"author\">Niethammer M.<\/span>, <span class=\"author\" itemprop=\"author\">Widmann M.<\/span>, <span class=\"author\" itemprop=\"author\">Kaiser F.<\/span>, <span class=\"author\" itemprop=\"author\">Nagy R.<\/span>, <span class=\"author\" itemprop=\"author\">Morioka N.<\/span>, <span class=\"author\" itemprop=\"author\">Babin C.<\/span>, <span class=\"author\" itemprop=\"author\">Erlekampf J.<\/span>, <span class=\"author\" itemprop=\"author\">Berwian P.<\/span>, <span class=\"author\" itemprop=\"author\">Booth MJ.<\/span>, <span class=\"author\" itemprop=\"author\">Wrachtrup J.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/244626955?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Laser Writing of Scalable Single Color Centers in Silicon Carbide<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_244626955\"><span itemprop=\"name\"><strong>Nano Letters<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_244626955\" \/><span itemprop=\"volumeNumber\">19<\/span><\/span>  (<span itemprop=\"datePublished\">2019<\/span>), p. <span itemprop=\"pagination\">2377-2383<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_244626955\"><span itemprop=\"issn\">ISSN: 1530-6984<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1021\/acs.nanolett.8b05070' target='blank' itemprop=\"sameAs\">10.1021\/acs.nanolett.8b05070<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Di Benedetto L.<\/span>, <span class=\"author\" itemprop=\"author\">Matthus C.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer AJ.<\/span>, <span class=\"author\" itemprop=\"author\">Licciardo GD.<\/span>, <span class=\"author\" itemprop=\"author\">Rubino A.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/226679087?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Performance of 4H-SIC bipolar diodes as temperature sensor at low temperatures<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Birmingham<\/span><\/span>, <span itemprop=\"startDate\" content=\"2018-09-02\">2. September 2018<\/span> - <span itemprop=\"endDate\" content=\"2018-09-06\">6. September 2018<\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"author\">Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (ed.): <\/span><span itemprop=\"name\" style=\"font-weight:bold\">Materials Science Forum<\/span> <span itemprop=\"datePublished\">2019<\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4028\/www.scientific.net\/MSF.963.572' target='blank' itemprop=\"sameAs\">10.4028\/www.scientific.net\/MSF.963.572<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Erdmann A.<\/span>, <span class=\"author\" itemprop=\"author\">Evanschitzky P.<\/span>, <span class=\"author\" itemprop=\"author\">Mesilhy HMS.<\/span>, <span class=\"author\" itemprop=\"author\">Philipsen V.<\/span>, <span class=\"author\" itemprop=\"author\">Hendrickx E.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer M.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/224627345?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Attenuated phase shift mask for extreme ultraviolet: Can they mitigate three-dimensional mask effects?<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_224627345\"><span itemprop=\"name\"><strong>Journal of Micro-Nanolithography MEMS and MOEMS<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_224627345\" \/><span itemprop=\"volumeNumber\">18<\/span><\/span>  (<span itemprop=\"datePublished\">2019<\/span>), Article No.: <span itemprop=\"pagination\">011005<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_224627345\"><span itemprop=\"issn\">ISSN: 1932-5150<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1117\/1.JMM.18.1.011005' target='blank' itemprop=\"sameAs\">10.1117\/1.JMM.18.1.011005<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Erlekampf J.<\/span>, <span class=\"author\" itemprop=\"author\">Kallinger B.<\/span>, <span class=\"author\" itemprop=\"author\">Wei\u00dfe J.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Berwian P.<\/span>, <span class=\"author\" itemprop=\"author\">Friedrich J.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/224369269?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Deeper insight into lifetime-engineering in 4H-SiC by ion implantation<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_224369269\"><span itemprop=\"name\"><strong>Journal of Applied Physics<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_224369269\" \/><span itemprop=\"volumeNumber\">126<\/span><\/span>  (<span itemprop=\"datePublished\">2019<\/span>), Article No.: <span itemprop=\"pagination\">045701<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_224369269\"><span itemprop=\"issn\">ISSN: 0021-8979<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1063\/1.5092429' target='blank' itemprop=\"sameAs\">10.1063\/1.5092429<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Fedorova N.<\/span>, <span class=\"author\" itemprop=\"author\">Macher P.<\/span>, <span class=\"author\" itemprop=\"author\">Jovicic V.<\/span>, <span class=\"author\" itemprop=\"author\">Zbogar-Rasic A.<\/span>, <span class=\"author\" itemprop=\"author\">Delgado A.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/228120857?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Experimental investigation of the gravity influence on the condensation behaviour on Al and PTFE-samples<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">27. GALA-Fachtagung \"Experimentelle Str\u00f6mungsmechanik\"<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Erlangen<\/span><\/span>, <span itemprop=\"startDate\" content=\"2019-09-03\">3. September 2019<\/span> - <span itemprop=\"endDate\" content=\"2019-09-05\">5. September 2019<\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"author\">A. Delgado, B. Gatternig, M. M\u00fcnsch, B. Ruck, A. Leder (ed.): <\/span><span itemprop=\"name\" style=\"font-weight:bold\">Proceedings der 27. GALA-Fachtagung \"Experimentelle Str\u00f6mungsmechanik\"<\/span> <span itemprop=\"datePublished\">2019<\/span><\/span><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Gr\u00fcnler S.<\/span>, <span class=\"author\" itemprop=\"author\">Rattmann G.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer AJ.<\/span>, <span class=\"author\" itemprop=\"author\">Krach F.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/228164965?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Towards highly integrated, automotive power SoCs using capacitors operating at 100 V implemented in TSV<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">9th International Conference on Integrated Power Electronics Systems, CIPS 2016<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Nuremberg, DEU<\/span><\/span>, <span itemprop=\"startDate\" content=\"2016-03-08\">8. March 2016<\/span> - <span itemprop=\"endDate\" content=\"2016-03-10\">10. March 2016<\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"name\" style=\"font-weight:bold\">CIPS 2016 - 9th International Conference on Integrated Power Electronics Systems<\/span> <span itemprop=\"datePublished\">2019<\/span><\/span><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Hutzler A.<\/span>, <span class=\"author\" itemprop=\"author\">Fritsch B.<\/span>, <span class=\"author\" itemprop=\"author\">Jank M.<\/span>, <span class=\"author\" itemprop=\"author\">Branscheid R.<\/span>, <span class=\"author\" itemprop=\"author\">Martens C.<\/span>, <span class=\"author\" itemprop=\"author\">Spiecker E.<\/span>, <span class=\"author\" itemprop=\"author\">M\u00e4rz M.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/305667461?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Nanoparticles: In Situ Liquid Cell TEM Studies on Etching and Growth Mechanisms of Gold Nanoparticles at a Solid\u2013Liquid\u2013Gas Interface<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_305667461\"><span itemprop=\"name\"><strong>Advanced Materials Interfaces<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_305667461\" \/><span itemprop=\"volumeNumber\">6<\/span><\/span>  (<span itemprop=\"datePublished\">2019<\/span>), p. <span itemprop=\"pagination\">1970126<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_305667461\"><span itemprop=\"issn\">ISSN: 2196-7350<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1002\/admi.201970126' target='blank' itemprop=\"sameAs\">10.1002\/admi.201970126<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Hutzler A.<\/span>, <span class=\"author\" itemprop=\"author\">Fritsch B.<\/span>, <span class=\"author\" itemprop=\"author\">Jank M.<\/span>, <span class=\"author\" itemprop=\"author\">Branscheid R.<\/span>, <span class=\"author\" itemprop=\"author\">Martens R.<\/span>, <span class=\"author\" itemprop=\"author\">Spiecker E.<\/span>, <span class=\"author\" itemprop=\"author\">M\u00e4rz M.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/224984581?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">In Situ Liquid Cell TEM Studies on Etching and Growth Mechanisms of Gold Nanoparticles at a Solid-Liquid-Gas Interface<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_224984581\"><span itemprop=\"name\"><strong>Advanced Materials Interfaces<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_224984581\" \/><span itemprop=\"volumeNumber\">6<\/span><\/span>  (<span itemprop=\"datePublished\">2019<\/span>), Article No.: <span itemprop=\"pagination\">1901027<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_224984581\"><span itemprop=\"issn\">ISSN: 2196-7350<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1002\/admi.201901027' target='blank' itemprop=\"sameAs\">10.1002\/admi.201901027<\/a><br \/>URL: <a href='https:\/\/www.onlinelibrary.wiley.com\/doi\/10.1002\/admi.201901027' target='blank' itemprop=\"url\">https:\/\/www.onlinelibrary.wiley.com\/doi\/10.1002\/admi.201901027<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Hutzler A.<\/span>, <span class=\"author\" itemprop=\"author\">Fritsch B.<\/span>, <span class=\"author\" itemprop=\"author\">Jank MPM.<\/span>, <span class=\"author\" itemprop=\"author\">Branscheid R.<\/span>, <span class=\"author\" itemprop=\"author\">Spiecker E.<\/span>, <span class=\"author\" itemprop=\"author\">M\u00e4rz M.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/222330443?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Preparation of Graphene-Supported Microwell Liquid Cells for In Situ Transmission Electron Microscopy<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_222330443\"><span itemprop=\"name\"><strong>Journal of Visualized Experiments<\/strong><\/span><\/span> (<span itemprop=\"datePublished\">2019<\/span>), Article No.: <span itemprop=\"pagination\">e59751<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_222330443\"><span itemprop=\"issn\">ISSN: 1940-087X<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.3791\/59751' target='blank' itemprop=\"sameAs\">10.3791\/59751<\/a><br \/>URL: <a href='https:\/\/www.jove.com\/video\/59751\/preparation-graphene-supported-microwell-liquid-cells-for-situ?status=a61757k' target='blank' itemprop=\"url\">https:\/\/www.jove.com\/video\/59751\/preparation-graphene-supported-microwell-liquid-cells-for-situ?status=a61757k<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Hutzler A.<\/span>, <span class=\"author\" itemprop=\"author\">Matthus C.<\/span>, <span class=\"author\" itemprop=\"author\">Dolle C.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Jank M.<\/span>, <span class=\"author\" itemprop=\"author\">Spiecker E.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/212850563?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Large-Area Layer Counting of Two-Dimensional Materials Evaluating the Wavelength Shift in Visible-Reflectance Spectroscopy<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_212850563\"><span itemprop=\"name\"><strong>Journal of Physical Chemistry C<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_212850563\" \/><span itemprop=\"volumeNumber\">123<\/span><\/span>  (<span itemprop=\"datePublished\">2019<\/span>), p. <span itemprop=\"pagination\">9192 - 9201<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_212850563\"><span itemprop=\"issn\">ISSN: 1932-7447<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1021\/acs.jpcc.9b00957' target='blank' itemprop=\"sameAs\">10.1021\/acs.jpcc.9b00957<\/a><br \/>URL: <a href='https:\/\/pubs.acs.org\/doi\/10.1021\/acs.jpcc.9b00957' target='blank' itemprop=\"url\">https:\/\/pubs.acs.org\/doi\/10.1021\/acs.jpcc.9b00957<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Kocher M.<\/span>, <span class=\"author\" itemprop=\"author\">Yao B.<\/span>, <span class=\"author\" itemprop=\"author\">Wei\u00dfe J.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Xu ZW.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/226678832?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Determination of compensation ratios of al-implanted 4H-SIC by tcad modelling of TLM measurements<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Birmingham<\/span><\/span>, <span itemprop=\"startDate\" content=\"2018-09-02\">2. September 2018<\/span> - <span itemprop=\"endDate\" content=\"2018-09-06\">6. September 2018<\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"author\">Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (ed.): <\/span><span itemprop=\"name\" style=\"font-weight:bold\">Materials Science Forum<\/span> <span itemprop=\"datePublished\">2019<\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4028\/www.scientific.net\/MSF.963.445' target='blank' itemprop=\"sameAs\">10.4028\/www.scientific.net\/MSF.963.445<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Matlok S.<\/span>, <span class=\"author\" itemprop=\"author\">Boettcher N.<\/span>, <span class=\"author\" itemprop=\"author\">Jahn M.<\/span>, <span class=\"author\" itemprop=\"author\">H\u00f6rauf P.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>, <span class=\"author\" itemprop=\"author\">Eckardt B.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/221383926?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Retrofitting Wide Band Gap Devices to classic Power Modules using Silicon RC Snubbers<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">2019 PCIM Europe<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">N\u00fcrnberg<\/span><\/span>, <span itemprop=\"startDate\" content=\"2019-05-07\">7. May 2019<\/span> - <span itemprop=\"endDate\" content=\"2019-05-09\">9. May 2019<\/span>)<\/span><br \/>URL: <a href='https:\/\/www.researchgate.net\/publication\/331642497_Retrofitting_Wide_Band_Gap_Devices_to_classic_Power_Modules_using_Silicon_RC_Snubbers' target='blank' itemprop=\"url\">https:\/\/www.researchgate.net\/publication\/331642497_Retrofitting_Wide_Band_Gap_Devices_to_classic_Power_Modules_using_Silicon_RC_Snubbers<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Matthus CD.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer AJ.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/211422591?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Wavelength-selective 4H-SiC UV-sensor array<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_211422591\"><span itemprop=\"name\"><strong>Materials Science in Semiconductor Processing<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_211422591\" \/><span itemprop=\"volumeNumber\">90<\/span><\/span>  (<span itemprop=\"datePublished\">2019<\/span>), p. <span itemprop=\"pagination\">205-211<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_211422591\"><span itemprop=\"issn\">ISSN: 1369-8001<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.mssp.2018.10.019' target='blank' itemprop=\"sameAs\">10.1016\/j.mssp.2018.10.019<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Matthus CD.<\/span>, <span class=\"author\" itemprop=\"author\">Di Benedetto L.<\/span>, <span class=\"author\" itemprop=\"author\">Kocher M.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer AJ.<\/span>, <span class=\"author\" itemprop=\"author\">Licciardo GD.<\/span>, <span class=\"author\" itemprop=\"author\">Rubino A.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/215207356?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Feasibility of 4H-SiC p-i-n Diode for Sensitive Temperature Measurements Between 20.5 K and 802 K<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_215207356\"><span itemprop=\"name\"><strong>IEEE Sensors Journal<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_215207356\" \/><span itemprop=\"volumeNumber\">19<\/span><\/span>  (<span itemprop=\"datePublished\">2019<\/span>), p. <span itemprop=\"pagination\">2871-2878<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_215207356\"><span itemprop=\"issn\">ISSN: 1530-437X<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/JSEN.2019.2891293' target='blank' itemprop=\"sameAs\">10.1109\/JSEN.2019.2891293<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Pichler P.<\/span>, <span class=\"author\" itemprop=\"author\">Sledziewski T.<\/span>, <span class=\"author\" itemprop=\"author\">H\u00e4ublein V.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer AJ.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/226674043?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Channeling in 4H-SiC from an application point of view<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Birmingham<\/span><\/span>, <span itemprop=\"startDate\" content=\"2018-09-02\">2. September 2018<\/span> - <span itemprop=\"endDate\" content=\"2018-09-06\">6. September 2018<\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"author\">Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (ed.): <\/span><span itemprop=\"name\" style=\"font-weight:bold\">Materials Science Forum<\/span> <span itemprop=\"datePublished\">2019<\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4028\/www.scientific.net\/MSF.963.386' target='blank' itemprop=\"sameAs\">10.4028\/www.scientific.net\/MSF.963.386<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Rattmann G.<\/span>, <span class=\"author\" itemprop=\"author\">Pichler P.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/223565346?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">On a Novel Source Technology for Deep Aluminum Diffusion for Silicon Power Electronics<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_223565346\"><span itemprop=\"name\"><strong>physica status solidi (a)<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_223565346\" \/><span itemprop=\"volumeNumber\">216<\/span><\/span>  (<span itemprop=\"datePublished\">2019<\/span>), Article No.: <span itemprop=\"pagination\">1900167<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_223565346\"><span itemprop=\"issn\">ISSN: 1862-6300<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1002\/pssa.201900167' target='blank' itemprop=\"sameAs\">10.1002\/pssa.201900167<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Rusch O.<\/span>, <span class=\"author\" itemprop=\"author\">Moult J.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/226674808?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Influence of trench design on the electrical properties of 650v 4H-SIC JBS diodes<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Birmingham<\/span><\/span>, <span itemprop=\"startDate\" content=\"2018-09-02\">2. September 2018<\/span> - <span itemprop=\"endDate\" content=\"2018-09-06\">6. September 2018<\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"author\">Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (ed.): <\/span><span itemprop=\"name\" style=\"font-weight:bold\">Materials Science Forum<\/span> <span itemprop=\"datePublished\">2019<\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4028\/www.scientific.net\/MSF.963.549' target='blank' itemprop=\"sameAs\">10.4028\/www.scientific.net\/MSF.963.549<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Schlichting H.<\/span>, <span class=\"author\" itemprop=\"author\">Sledziewski T.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/318189656?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Design Considerations for Robust Manufacturing and High Yield of 1.2 kV 4H-SiC VDMOS Transistors<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_318189656\"><span itemprop=\"name\"><strong>Materials Science Forum<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_318189656\" \/><span itemprop=\"volumeNumber\">963<\/span><\/span>  (<span itemprop=\"datePublished\">2019<\/span>), p. <span itemprop=\"pagination\">763-767<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_318189656\"><span itemprop=\"issn\">ISSN: 0255-5476<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4028\/www.scientific.net\/MSF.963.763' target='blank' itemprop=\"sameAs\">10.4028\/www.scientific.net\/MSF.963.763<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Schlichting H.<\/span>, <span class=\"author\" itemprop=\"author\">Sledziewski T.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer AJ.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/226675564?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Design considerations for robust manufacturing and high yield of 1.2 kv 4H-SIC VDMOS transistors<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Birmingham<\/span><\/span>, <span itemprop=\"startDate\" content=\"2018-09-02\">2. September 2018<\/span> - <span itemprop=\"endDate\" content=\"2018-09-06\">6. September 2018<\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"author\">Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (ed.): <\/span><span itemprop=\"name\" style=\"font-weight:bold\">Materials Science Forum<\/span> <span itemprop=\"datePublished\">2019<\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4028\/www.scientific.net\/MSF.963.763' target='blank' itemprop=\"sameAs\">10.4028\/www.scientific.net\/MSF.963.763<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Schriefer T.<\/span>, <span class=\"author\" itemprop=\"author\">Hofmann M.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/217786442?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">A hybrid frequency-time-domain approach to determine the vibration fatigue life of electronic devices<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_217786442\"><span itemprop=\"name\"><strong>Microelectronics Reliability<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_217786442\" \/><span itemprop=\"volumeNumber\">98<\/span><\/span>  (<span itemprop=\"datePublished\">2019<\/span>), p. <span itemprop=\"pagination\">86-94<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_217786442\"><span itemprop=\"issn\">ISSN: 0026-2714<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.microrel.2019.04.001' target='blank' itemprop=\"sameAs\">10.1016\/j.microrel.2019.04.001<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Schriefer T.<\/span>, <span class=\"author\" itemprop=\"author\">Hofmann M.<\/span>, <span class=\"author\" itemprop=\"author\">Rauh H.<\/span>, <span class=\"author\" itemprop=\"author\">Eckardt B.<\/span>, <span class=\"author\" itemprop=\"author\">M\u00e4rz M.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/206436015?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Parameter study on the electrical contact resistance of axially canted coil springs for high-current systems<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">2018 29th International Conference on Electrical Contacts together with 64th IEEE Holm Conference on Electrical Contacts<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Albuquerque, NM<\/span><\/span>, <span itemprop=\"startDate\" content=\"2018-10-14\">14. October 2018<\/span> - <span itemprop=\"endDate\" content=\"2018-10-18\">18. October 2018<\/span>)<\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/HOLM.2018.8611640' target='blank' itemprop=\"sameAs\">10.1109\/HOLM.2018.8611640<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Stolzke T.<\/span>, <span class=\"author\" itemprop=\"author\">Dirnecker T.<\/span>, <span class=\"author\" itemprop=\"author\">Schwarz J.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/215402976?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Investigation of magnetic properties from a manganese-zinc-ferrite polymer bonded material<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_215402976\"><span itemprop=\"name\"><strong>International Journal of Applied Electromagnetics and Mechanics<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_215402976\" \/><span itemprop=\"volumeNumber\">59<\/span><\/span>  (<span itemprop=\"datePublished\">2019<\/span>), p. <span itemprop=\"pagination\">97-104<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_215402976\"><span itemprop=\"issn\">ISSN: 1383-5416<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.3233\/JAE-171244' target='blank' itemprop=\"sameAs\">10.3233\/JAE-171244<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Stolzke T.<\/span>, <span class=\"author\" itemprop=\"author\">Ehrlich S.<\/span>, <span class=\"author\" itemprop=\"author\">Joffe C.<\/span>, <span class=\"author\" itemprop=\"author\">M\u00e4rz M.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/228434288?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Comprehensive accuracy examination of electrical power loss measurements of inductive components for frequencies up to 1\u202fMHz<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_228434288\"><span itemprop=\"name\"><strong>Journal of Magnetism and Magnetic Materials<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_228434288\" \/><span itemprop=\"volumeNumber\">497<\/span><\/span>  (<span itemprop=\"datePublished\">2019<\/span>), Article No.: <span itemprop=\"pagination\">166022<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_228434288\"><span itemprop=\"issn\">ISSN: 0304-8853<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.jmmm.2019.166022' target='blank' itemprop=\"sameAs\">10.1016\/j.jmmm.2019.166022<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Udvarhelyi P.<\/span>, <span class=\"author\" itemprop=\"author\">Nagy R.<\/span>, <span class=\"author\" itemprop=\"author\">Kaiser F.<\/span>, <span class=\"author\" itemprop=\"author\">Lee SY.<\/span>, <span class=\"author\" itemprop=\"author\">Wrachtrup J.<\/span>, <span class=\"author\" itemprop=\"author\">Gali A.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/244627206?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Spectrally Stable Defect Qubits with no Inversion Symmetry for Robust Spin-To-Photon Interface<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_244627206\"><span itemprop=\"name\"><strong>Physical Review Applied<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_244627206\" \/><span itemprop=\"volumeNumber\">11<\/span><\/span>  (<span itemprop=\"datePublished\">2019<\/span>), Article No.: <span itemprop=\"pagination\">044022<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_244627206\"><span itemprop=\"issn\">ISSN: 2331-7019<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1103\/PhysRevApplied.11.044022' target='blank' itemprop=\"sameAs\">10.1103\/PhysRevApplied.11.044022<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Wei\u00dfe J.<\/span>, <span class=\"author\" itemprop=\"author\">Hauck M.<\/span>, <span class=\"author\" itemprop=\"author\">Krieger M.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/217399319?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Aluminum acceptor activation and charge compensation in implanted p-type 4H-SiC<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_217399319\"><span itemprop=\"name\"><strong>AIP Advances<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_217399319\" \/><span itemprop=\"volumeNumber\">9<\/span><\/span>  (<span itemprop=\"datePublished\">2019<\/span>), p. <span itemprop=\"pagination\">055308<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_217399319\"><span itemprop=\"issn\">ISSN: 2158-3226<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1063\/1.5096440' target='blank' itemprop=\"sameAs\">10.1063\/1.5096440<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Wei\u00dfe J.<\/span>, <span class=\"author\" itemprop=\"author\">Hauck M.<\/span>, <span class=\"author\" itemprop=\"author\">Krieger M.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer AJ.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/222885594?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Publisher's Note: Aluminum acceptor activation and charge compensation in implanted p-type 4H-SiC (AIP Advances (2019) 9 (055308) DOI: 10.1063\/1.5096440)<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_222885594\"><span itemprop=\"name\"><strong>AIP Advances<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_222885594\" \/><span itemprop=\"volumeNumber\">9<\/span><\/span>  (<span itemprop=\"datePublished\">2019<\/span>), Article No.: <span itemprop=\"pagination\">079901<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_222885594\"><span itemprop=\"issn\">ISSN: 2158-3226<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1063\/1.5118666' target='blank' itemprop=\"sameAs\">10.1063\/1.5118666<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Wei\u00dfe J.<\/span>, <span class=\"author\" itemprop=\"author\">Hauck M.<\/span>, <span class=\"author\" itemprop=\"author\">Sledziewski T.<\/span>, <span class=\"author\" itemprop=\"author\">Krieger M.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Mitlehner H.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/226675821?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">On the origin of charge compensation in aluminum-implanted n-type 4H-SiC by analysis of hall effect measurements<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Birmingham<\/span><\/span>, <span itemprop=\"startDate\" content=\"2018-09-02\">2. September 2018<\/span> - <span itemprop=\"endDate\" content=\"2018-09-06\">6. September 2018<\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"author\">Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (ed.): <\/span><span itemprop=\"name\" style=\"font-weight:bold\">Materials Science Forum<\/span> <span itemprop=\"datePublished\">2019<\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4028\/www.scientific.net\/MSF.963.433' target='blank' itemprop=\"sameAs\">10.4028\/www.scientific.net\/MSF.963.433<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Wei\u00dfe J.<\/span>, <span class=\"author\" itemprop=\"author\">Mitlehner H.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/226674553?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Design of a 4H-SIC resurf N-LDMOS transistor for high voltage integrated circuits<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Birmingham<\/span><\/span>, <span itemprop=\"startDate\" content=\"2018-09-02\">2. September 2018<\/span> - <span itemprop=\"endDate\" content=\"2018-09-06\">6. September 2018<\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"author\">Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (ed.): <\/span><span itemprop=\"name\" style=\"font-weight:bold\">Materials Science Forum<\/span> <span itemprop=\"datePublished\">2019<\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4028\/www.scientific.net\/MSF.963.629' target='blank' itemprop=\"sameAs\">10.4028\/www.scientific.net\/MSF.963.629<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">\u015aledziewski T.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Chen X.<\/span>, <span class=\"author\" itemprop=\"author\">Zhao Y.<\/span>, <span class=\"author\" itemprop=\"author\">Li C.<\/span>, <span class=\"author\" itemprop=\"author\">Dai X.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/226678322?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Comparison between NI-SALICIDE and self-aligned lift-off used in fabrication of ohmic contacts for sic power MOSFET<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Birmingham<\/span><\/span>, <span itemprop=\"startDate\" content=\"2018-09-02\">2. September 2018<\/span> - <span itemprop=\"endDate\" content=\"2018-09-06\">6. September 2018<\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"author\">Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield (ed.): <\/span><span itemprop=\"name\" style=\"font-weight:bold\">Materials Science Forum<\/span> <span itemprop=\"datePublished\">2019<\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4028\/www.scientific.net\/MSF.963.490' target='blank' itemprop=\"sameAs\">10.4028\/www.scientific.net\/MSF.963.490<\/a><\/li><\/ul><h3>2018<\/h3><ul class=\"cris-publications \" lang=\"en\"><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Bilbao-Guillerna A.<\/span>, <span class=\"author\" itemprop=\"author\">Thiruvallur Eachambadi R.<\/span>, <span class=\"author\" itemprop=\"author\">Cadot GBJ.<\/span>, <span class=\"author\" itemprop=\"author\">Axinte DA.<\/span>, <span class=\"author\" itemprop=\"author\">Billingham J.<\/span>, <span class=\"author\" itemprop=\"author\">Stumpf F.<\/span>, <span class=\"author\" itemprop=\"author\">Stumpf F.<\/span>, <span class=\"author\" itemprop=\"author\">Beuer S.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/111020404?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Novel Approach Based on Continuous Trench Modelling to Predict Focused Ion Beam Prepared Freeform Surfaces<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_111020404\"><span itemprop=\"name\"><strong>Journal of Materials Processing Technology<\/strong><\/span><\/span> (<span itemprop=\"datePublished\">2018<\/span>)<br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_111020404\"><span itemprop=\"issn\">ISSN: 0924-0136<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.jmatprotec.2017.10.024' target='blank' itemprop=\"sameAs\">10.1016\/j.jmatprotec.2017.10.024<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Distler F.<\/span>, <span class=\"author\" itemprop=\"author\">Oppelt D.<\/span>, <span class=\"author\" itemprop=\"author\">Sch\u00fcr J.<\/span>, <span class=\"author\" itemprop=\"author\">Vossiek M.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/200719730?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Design and characterization of a compact and robust shielded dielectric waveguide for mmW applications<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"name\" style=\"font-weight:bold\">Proceedings of the GeMiC 2018 - The 11th German Microwave Conference (GeMiC 2018)<\/span> <span itemprop=\"datePublished\">2018<\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.23919\/gemic.2018.8335108' target='blank' itemprop=\"sameAs\">10.23919\/gemic.2018.8335108<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>, <span class=\"author\" itemprop=\"author\">Huerner A.<\/span>, <span class=\"author\" itemprop=\"author\">Zhu Y.<\/span>, <span class=\"author\" itemprop=\"author\">Bach L.<\/span>, <span class=\"author\" itemprop=\"author\">Schletz A.<\/span>, <span class=\"author\" itemprop=\"author\">Zuerbig V.<\/span>, <span class=\"author\" itemprop=\"author\">Pinti L.<\/span>, <span class=\"author\" itemprop=\"author\">Kirste L.<\/span>, <span class=\"author\" itemprop=\"author\">Giese C.<\/span>, <span class=\"author\" itemprop=\"author\">Nebel CE.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer AJ.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/201399274?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Electrical properties of schottky-diodes based on B doped diamond<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">International Conference on Silicon Carbide and Related Materials, ICSCRM 2017<\/span><span itemprop=\"startDate\" content=\"2018\"><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4028\/www.scientific.net\/MSF.924.931' target='blank' itemprop=\"sameAs\">10.4028\/www.scientific.net\/MSF.924.931<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Erlekampf J.<\/span>, <span class=\"author\" itemprop=\"author\">Kaminzky D.<\/span>, <span class=\"author\" itemprop=\"author\">Rosshirt K.<\/span>, <span class=\"author\" itemprop=\"author\">Kallinger B.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Berwian P.<\/span>, <span class=\"author\" itemprop=\"author\">Friedrich J.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/201399607?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Influence and mutual interaction of process parameters on the Z1\/2defect concentration during epitaxy of 4H-SiC<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">International Conference on Silicon Carbide and Related Materials, ICSCRM 2017<\/span><span itemprop=\"startDate\" content=\"2018\"><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4028\/www.scientific.net\/MSF.924.112' target='blank' itemprop=\"sameAs\">10.4028\/www.scientific.net\/MSF.924.112<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">F\u00f6rthner M.<\/span>, <span class=\"author\" itemprop=\"author\">Girschikofsky M.<\/span>, <span class=\"author\" itemprop=\"author\">Rumler M.<\/span>, <span class=\"author\" itemprop=\"author\">Stumpf F.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Hellmann R.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/211425535?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">One-step nanoimprinted Bragg grating sensor based on hybrid polymers<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_211425535\"><span itemprop=\"name\"><strong>Sensors and Actuators A-Physical<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_211425535\" \/><span itemprop=\"volumeNumber\">283<\/span><\/span>  (<span itemprop=\"datePublished\">2018<\/span>), p. <span itemprop=\"pagination\">298-304<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_211425535\"><span itemprop=\"issn\">ISSN: 0924-4247<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.sna.2018.09.053' target='blank' itemprop=\"sameAs\">10.1016\/j.sna.2018.09.053<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Girschikofsky MG.<\/span>, <span class=\"author\" itemprop=\"author\">Rosenberger M.<\/span>, <span class=\"author\" itemprop=\"author\">F\u00f6rthner M.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Hellmann R.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/211424398?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Flexible thin film bending sensor based on Bragg gratings in hybrid polymers<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">Optical Sensing and Detection V 2018<\/span><span itemprop=\"startDate\" content=\"2018\"><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1117\/12.2303820' target='blank' itemprop=\"sameAs\">10.1117\/12.2303820<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Huerner A.<\/span>, <span class=\"author\" itemprop=\"author\">Heckel T.<\/span>, <span class=\"author\" itemprop=\"author\">Endruschat A.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer AJ.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/201398955?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Analytical model for the influence of the gate-voltage on the forward conduction properties of the body-diode in SiC-MOSFETs<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">International Conference on Silicon Carbide and Related Materials, ICSCRM 2017<\/span><span itemprop=\"startDate\" content=\"2018\"><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4028\/www.scientific.net\/MSF.924.901' target='blank' itemprop=\"sameAs\">10.4028\/www.scientific.net\/MSF.924.901<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/Thesis\"><span class=\"author\" itemprop=\"author\">Hutzler A.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/206970942?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Development of advanced liquid cell architectures for high performance in situ transmission electron microscopy in materials sciences<\/a><\/strong><\/span> (Dissertation, <span itemprop=\"datePublished\">2018<\/span>)<br \/>URL: <a href='https:\/\/opus4.kobv.de\/opus4-fau\/frontdoor\/index\/index\/docId\/10092' target='blank' itemprop=\"url\">https:\/\/opus4.kobv.de\/opus4-fau\/frontdoor\/index\/index\/docId\/10092<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Hutzler A.<\/span>, <span class=\"author\" itemprop=\"author\">Matthus C.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Jank M.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/207065106?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Large-Area Layer Counting of 2D Materials via Visible Reflection Spectroscopy<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">19th International Microscopy Congress (IMC19)<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Sydney<\/span><\/span>, <span itemprop=\"startDate\" content=\"2018-09-09\">9. September 2018<\/span> - <span itemprop=\"endDate\" content=\"2018-09-14\">14. September 2018<\/span>)<\/span><br \/>URL: <a href='https:\/\/abstracts.imc19.com\/pdf\/abstract_497.pdf' target='blank' itemprop=\"url\">https:\/\/abstracts.imc19.com\/pdf\/abstract_497.pdf<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Hutzler A.<\/span>, <span class=\"author\" itemprop=\"author\">Schmutzler T.<\/span>, <span class=\"author\" itemprop=\"author\">Jank M.<\/span>, <span class=\"author\" itemprop=\"author\">Branscheid R.<\/span>, <span class=\"author\" itemprop=\"author\">Unruh T.<\/span>, <span class=\"author\" itemprop=\"author\">Spiecker E.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/206104673?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Unravelling the Mechanisms of Gold\u2212Silver Core\u2212Shell Nanostructure Formation by in Situ TEM Using an Advanced Liquid Cell Design<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_206104673\"><span itemprop=\"name\"><strong>Nano Letters<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_206104673\" \/><span itemprop=\"volumeNumber\">18<\/span><\/span>  (<span itemprop=\"datePublished\">2018<\/span>), p. <span itemprop=\"pagination\">7222 - 7229<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_206104673\"><span itemprop=\"issn\">ISSN: 1530-6984<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1021\/acs.nanolett.8b03388' target='blank' itemprop=\"sameAs\">10.1021\/acs.nanolett.8b03388<\/a><br \/>URL: <a href='https:\/\/pubs.acs.org\/doi\/10.1021\/acs.nanolett.8b03388' target='blank' itemprop=\"url\">https:\/\/pubs.acs.org\/doi\/10.1021\/acs.nanolett.8b03388<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Kalkofen B.<\/span>, <span class=\"author\" itemprop=\"author\">Ahmed B.<\/span>, <span class=\"author\" itemprop=\"author\">Beljakowa S.<\/span>, <span class=\"author\" itemprop=\"author\">Lisker M.<\/span>, <span class=\"author\" itemprop=\"author\">Kim YS.<\/span>, <span class=\"author\" itemprop=\"author\">Burte EP.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/212505825?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Atomic layer deposition of phosphorus oxide films as solid sources for doping of semiconductor structures<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">18th IEEE International Conference on Nanotechnology (IEEE-NANO)<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Cork<\/span><\/span>, <span itemprop=\"startDate\" content=\"2018-07-23\">23. July 2018<\/span> - <span itemprop=\"endDate\" content=\"2018-07-26\">26. July 2018<\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"name\" style=\"font-weight:bold\">2018 IEEE 18TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO)<\/span>, <span itemprop=\"publisher\" itemscope itemtype=\"http:\/\/schema.org\/Organization\"><span class=\"city\" itemprop=\"address\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"addressLocality\">NEW YORK<\/span><\/span>: <\/span> <span itemprop=\"datePublished\">2018<\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/nano.2018.8626235' target='blank' itemprop=\"sameAs\">10.1109\/nano.2018.8626235<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Lomakin K.<\/span>, <span class=\"author\" itemprop=\"author\">Pavlenko T.<\/span>, <span class=\"author\" itemprop=\"author\">Ankenbrand M.<\/span>, <span class=\"author\" itemprop=\"author\">Sippel M.<\/span>, <span class=\"author\" itemprop=\"author\">Ringel J.<\/span>, <span class=\"author\" itemprop=\"author\">Scheetz M.<\/span>, <span class=\"author\" itemprop=\"author\">Klemm T.<\/span>, <span class=\"author\" itemprop=\"author\">Gr\u00e4f D.<\/span>, <span class=\"author\" itemprop=\"author\">Helmreich K.<\/span>, <span class=\"author\" itemprop=\"author\">Franke J.<\/span>, <span class=\"author\" itemprop=\"author\">Gold G.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/209877531?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Evaluation and Characterization of 3D Printed Pyramid Horn Antennas utilizing different Deposition Techniques for Conductive Material<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_209877531\"><span itemprop=\"name\"><strong>IEEE Transactions on Components, Packaging and Manufacturing Technology<\/strong><\/span><\/span> (<span itemprop=\"datePublished\">2018<\/span>), p. <span itemprop=\"pagination\">1-1<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_209877531\"><span itemprop=\"issn\">ISSN: 2156-3950<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/tcpmt.2018.2871931' target='blank' itemprop=\"sameAs\">10.1109\/tcpmt.2018.2871931<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Matthus C.<\/span>, <span class=\"author\" itemprop=\"author\">H\u00fcrner A.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer AJ.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/107394364?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Evidence of low injection efficiency for implanted p-emitters in bipolar 4H-SiC high-voltage diodes<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_107394364\"><span itemprop=\"name\"><strong>Solid-State Electronics<\/strong><\/span><\/span> (<span itemprop=\"datePublished\">2018<\/span>), p. <span itemprop=\"pagination\">101-105<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_107394364\"><span itemprop=\"issn\">ISSN: 0038-1101<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.sse.2018.03.010' target='blank' itemprop=\"sameAs\">10.1016\/j.sse.2018.03.010<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Nagy R.<\/span>, <span class=\"author\" itemprop=\"author\">Widmann M.<\/span>, <span class=\"author\" itemprop=\"author\">Niethammer M.<\/span>, <span class=\"author\" itemprop=\"author\">Dasari DBR.<\/span>, <span class=\"author\" itemprop=\"author\">Gerhardt I.<\/span>, <span class=\"author\" itemprop=\"author\">Soykal OO.<\/span>, <span class=\"author\" itemprop=\"author\">Radulaski M.<\/span>, <span class=\"author\" itemprop=\"author\">Ohshima T.<\/span>, <span class=\"author\" itemprop=\"author\">Vuckovic J.<\/span>, <span class=\"author\" itemprop=\"author\">Nguyen Tien Son .<\/span>, <span class=\"author\" itemprop=\"author\">Ivanov IG.<\/span>, <span class=\"author\" itemprop=\"author\">Economou SE.<\/span>, <span class=\"author\" itemprop=\"author\">Bonato C.<\/span>, <span class=\"author\" itemprop=\"author\">Lee SY.<\/span>, <span class=\"author\" itemprop=\"author\">Wrachtrup J.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/244627456?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Quantum Properties of Dichroic Silicon Vacancies in Silicon Carbide<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_244627456\"><span itemprop=\"name\"><strong>Physical Review Applied<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_244627456\" \/><span itemprop=\"volumeNumber\">9<\/span><\/span>  (<span itemprop=\"datePublished\">2018<\/span>), Article No.: <span itemprop=\"pagination\">034022<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_244627456\"><span itemprop=\"issn\">ISSN: 2331-7019<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1103\/PhysRevApplied.9.034022' target='blank' itemprop=\"sameAs\">10.1103\/PhysRevApplied.9.034022<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Nouibat TH.<\/span>, <span class=\"author\" itemprop=\"author\">Messai Z.<\/span>, <span class=\"author\" itemprop=\"author\">Chikouch D.<\/span>, <span class=\"author\" itemprop=\"author\">Ouennoughi Z.<\/span>, <span class=\"author\" itemprop=\"author\">Rouag N.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/211425159?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Normalized differential conductance to study current conduction mechanisms in MOS structures<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_211425159\"><span itemprop=\"name\"><strong>Microelectronics Reliability<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_211425159\" \/><span itemprop=\"volumeNumber\">91<\/span><\/span>  (<span itemprop=\"datePublished\">2018<\/span>), p. <span itemprop=\"pagination\">183-187<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_211425159\"><span itemprop=\"issn\">ISSN: 0026-2714<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.microrel.2018.10.001' target='blank' itemprop=\"sameAs\">10.1016\/j.microrel.2018.10.001<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Rosenberger M.<\/span>, <span class=\"author\" itemprop=\"author\">Girschikofsky M.<\/span>, <span class=\"author\" itemprop=\"author\">F\u00f6rthner M.<\/span>, <span class=\"author\" itemprop=\"author\">Belle S.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Schmau\u00df B.<\/span>, <span class=\"author\" itemprop=\"author\">Hellmann R.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/119966704?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">TiO2 surface functionalization of COC based planar waveguide Bragg gratings for refractive index sensing<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_119966704\"><span itemprop=\"name\"><strong>Journal of Optics<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_119966704\" \/><span itemprop=\"volumeNumber\">20<\/span><\/span>  (<span itemprop=\"datePublished\">2018<\/span>), Article No.: <span itemprop=\"pagination\">01LT02<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_119966704\"><span itemprop=\"issn\">ISSN: 2040-8978<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1088\/2040-8986\/aa9bcf' target='blank' itemprop=\"sameAs\">10.1088\/2040-8986\/aa9bcf<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Scharin-Mehlmann M.<\/span>, <span class=\"author\" itemprop=\"author\">H\u00e4ring A.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Dirnecker T.<\/span>, <span class=\"author\" itemprop=\"author\">Friedrich O.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Gilbert D.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/200509004?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Nano- and micro-patterned S-, H-, and X-PDMS for cell-based applications: Comparison of wettability, roughness, and cell-derived parameters<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_200509004\"><span itemprop=\"name\"><strong>Frontiers in Bioengineering and Biotechnology<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_200509004\" \/><span itemprop=\"volumeNumber\">6<\/span><\/span>  (<span itemprop=\"datePublished\">2018<\/span>), Article No.: <span itemprop=\"pagination\">51<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_200509004\"><span itemprop=\"issn\">ISSN: 2296-4185<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.3389\/fbioe.2018.00051' target='blank' itemprop=\"sameAs\">10.3389\/fbioe.2018.00051<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Schneidereit D.<\/span>, <span class=\"author\" itemprop=\"author\">Tschernich J.<\/span>, <span class=\"author\" itemprop=\"author\">Friedrich O.<\/span>, <span class=\"author\" itemprop=\"author\">Scharin-Mehlmann M.<\/span>, <span class=\"author\" itemprop=\"author\">Gilbert D.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/210958185?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">3D-Printed Reusable Cell Culture Chamber with Integrated Electrodes for Electrical Stimulation and Parallel Microscopic Evaluation<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_210958185\"><span itemprop=\"name\"><strong>3D Printing and Additive Manufacturing<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_210958185\" \/><span itemprop=\"volumeNumber\">5<\/span><\/span>  (<span itemprop=\"datePublished\">2018<\/span>), p. <span itemprop=\"pagination\">115-125<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_210958185\"><span itemprop=\"issn\">ISSN: 2329-7662<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1089\/3dp.2017.0103' target='blank' itemprop=\"sameAs\">10.1089\/3dp.2017.0103<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Schriefer T.<\/span>, <span class=\"author\" itemprop=\"author\">Hofmann M.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/217113058?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Assessing the vibrational response and robustness of  electronic systems by dissolving time and length scale<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">19th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Toulouse<\/span><\/span>, <span itemprop=\"startDate\" content=\"2018-04-15\">15. April 2018<\/span> - <span itemprop=\"endDate\" content=\"2018-04-18\">18. April 2018<\/span>)<\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/EuroSimE.2018.8369868' target='blank' itemprop=\"sameAs\">10.1109\/EuroSimE.2018.8369868<\/a><br \/>URL: <a href='https:\/\/ieeexplore.ieee.org\/document\/8369868' target='blank' itemprop=\"url\">https:\/\/ieeexplore.ieee.org\/document\/8369868<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Schriefer T.<\/span>, <span class=\"author\" itemprop=\"author\">Hofmann M.<\/span>, <span class=\"author\" itemprop=\"author\">M\u00e4rz M.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/202474222?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Vibrational resistance investigation of an IGBT gate driver utilizing Frequency Response Analysis (FRA) and Highly Accelerated Life Test (HALT)<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">2018 10th International Conference on Integrated Power Electronics Systems (CIPS)<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Stuttgart<\/span><\/span>, <span itemprop=\"startDate\" content=\"2018-03-20\">20. March 2018<\/span> - <span itemprop=\"endDate\" content=\"2018-03-22\">22. March 2018<\/span>)<\/span><br \/>URL: <a href='https:\/\/ieeexplore.ieee.org\/document\/8403138' target='blank' itemprop=\"url\">https:\/\/ieeexplore.ieee.org\/document\/8403138<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Schr\u00fcfer D.<\/span>, <span class=\"author\" itemprop=\"author\">Ellinger M.<\/span>, <span class=\"author\" itemprop=\"author\">Jank M.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Weigel R.<\/span>, <span class=\"author\" itemprop=\"author\">Hagelauer AM.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/208600826?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Circuits with Scaled Metal Oxide Technology for Future TOLAE RF Systems<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">European Microwave Conference<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Madrid<\/span><\/span>, <span itemprop=\"startDate\" content=\"2018-09-23\">23. September 2018<\/span> - <span itemprop=\"endDate\" content=\"2018-09-28\">28. September 2018<\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"name\" style=\"font-weight:bold\">Proceedings of the 48th European Microwave Conference<\/span> <span itemprop=\"datePublished\">2018<\/span><\/span><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Steinberger M.<\/span>, <span class=\"author\" itemprop=\"author\">Geiling J.<\/span>, <span class=\"author\" itemprop=\"author\">Oechsner R.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/211424034?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Anode recirculation and purge strategies for PEM fuel cell operation with diluted hydrogen feed gas<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_211424034\"><span itemprop=\"name\"><strong>Applied Energy<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_211424034\" \/><span itemprop=\"volumeNumber\">232<\/span><\/span>  (<span itemprop=\"datePublished\">2018<\/span>), p. <span itemprop=\"pagination\">572-582<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_211424034\"><span itemprop=\"issn\">ISSN: 0306-2619<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.apenergy.2018.10.004' target='blank' itemprop=\"sameAs\">10.1016\/j.apenergy.2018.10.004<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Stolzke T.<\/span>, <span class=\"author\" itemprop=\"author\">Dirnecker T.<\/span>, <span class=\"author\" itemprop=\"author\">Schwarz J.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/210249436?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Investigation of magnetic properties from a manganese\u2013zinc\u2013ferrite polymer bonded material<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_210249436\"><span itemprop=\"name\"><strong>International Journal of Applied Electromagnetics and Mechanics<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_210249436\" \/><span itemprop=\"volumeNumber\">Pre-press<\/span><\/span>  (<span itemprop=\"datePublished\">2018<\/span>), p. <span itemprop=\"pagination\">1-8<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_210249436\"><span itemprop=\"issn\">ISSN: 1383-5416<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.3233\/JAE-171244' target='blank' itemprop=\"sameAs\">10.3233\/JAE-171244<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Unterreitmeier M.<\/span>, <span class=\"author\" itemprop=\"author\">Nagler O.<\/span>, <span class=\"author\" itemprop=\"author\">Pfitzner L.<\/span>, <span class=\"author\" itemprop=\"author\">Weigel R.<\/span>, <span class=\"author\" itemprop=\"author\">Holmer R.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/206196956?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">An acoustic emmission sensor system for thin layer crack detection<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Aalborg<\/span><\/span>, <span itemprop=\"startDate\" content=\"2018-10-01\">1. October 2018<\/span> - <span itemprop=\"endDate\" content=\"2018-10-05\">5. October 2018<\/span>)<\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.microrel.2018.07.015' target='blank' itemprop=\"sameAs\">10.1016\/j.microrel.2018.07.015<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Wei\u00dfe J.<\/span>, <span class=\"author\" itemprop=\"author\">Hauck M.<\/span>, <span class=\"author\" itemprop=\"author\">Sledziewski T.<\/span>, <span class=\"author\" itemprop=\"author\">Tschiesche M.<\/span>, <span class=\"author\" itemprop=\"author\">Krieger M.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Mitlehner H.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/120076044?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Analysis of Compensation Effects in Aluminum-Implanted 4H-SiC Devices<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_120076044\"><span itemprop=\"name\"><strong>Materials Science Forum<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_120076044\" \/><span itemprop=\"volumeNumber\">924<\/span><\/span>  (<span itemprop=\"datePublished\">2018<\/span>), p. <span itemprop=\"pagination\">184-187<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_120076044\"><span itemprop=\"issn\">ISSN: 0255-5476<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4028\/www.scientific.net\/MSF.924.184' target='blank' itemprop=\"sameAs\">10.4028\/www.scientific.net\/MSF.924.184<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Yu Z.<\/span>, <span class=\"author\" itemprop=\"author\">Zeltner S.<\/span>, <span class=\"author\" itemprop=\"author\">Boettcher N.<\/span>, <span class=\"author\" itemprop=\"author\">Rattmann G.<\/span>, <span class=\"author\" itemprop=\"author\">Leib J.<\/span>, <span class=\"author\" itemprop=\"author\">Bayer C.<\/span>, <span class=\"author\" itemprop=\"author\">Schletz A.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/211424776?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Heterogeneous Integration of Vertical GaN Power Transistor on Si Capacitor for DC-DC Converters<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">7th Electronic System-Integration Technology Conference, ESTC 2018<\/span><span itemprop=\"startDate\" content=\"2018\"><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/ESTC.2018.8546362' target='blank' itemprop=\"sameAs\">10.1109\/ESTC.2018.8546362<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Z\u00f6rner A.<\/span>, <span class=\"author\" itemprop=\"author\">Oertel S.<\/span>, <span class=\"author\" itemprop=\"author\">Jank M.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Langenstein B.<\/span>, <span class=\"author\" itemprop=\"author\">Bertsch T.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/200508629?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Human Sweat Analysis Using a Portable Device Based on a Screen-printed Electrolyte Sensor<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_200508629\"><span itemprop=\"name\"><strong>Electroanalysis<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_200508629\" \/><span itemprop=\"volumeNumber\">30<\/span><\/span>  (<span itemprop=\"datePublished\">2018<\/span>), p. <span itemprop=\"pagination\">665-671<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_200508629\"><span itemprop=\"issn\">ISSN: 1040-0397<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1002\/elan.201700672' target='blank' itemprop=\"sameAs\">10.1002\/elan.201700672<\/a><\/li><\/ul><h3>2017<\/h3><ul class=\"cris-publications \" lang=\"en\"><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Albrecht M.<\/span>, <span class=\"author\" itemprop=\"author\">H\u00fcrner A.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/119456524?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Experimental verification of a self-triggered solid-state circuit breaker based on a SiC BIFET<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_119456524\"><span itemprop=\"name\"><strong>Materials Science Forum<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_119456524\" \/><span itemprop=\"volumeNumber\">897<\/span><\/span>  (<span itemprop=\"datePublished\">2017<\/span>), p. <span itemprop=\"pagination\">665-668<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_119456524\"><span itemprop=\"issn\">ISSN: 0255-5476<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4028\/www.scientific.net\/MSF.897.665' target='blank' itemprop=\"sameAs\">10.4028\/www.scientific.net\/MSF.897.665<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Banzhaf S.<\/span>, <span class=\"author\" itemprop=\"author\">Kenntner J.<\/span>, <span class=\"author\" itemprop=\"author\">Grieb M.<\/span>, <span class=\"author\" itemprop=\"author\">Schwaiger S.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer AJ.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/201360095?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Stress reduction in high voltage MIS capacitor fabrication<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">19th International Symposium on Power Electronics, Ee 2017<\/span><span itemprop=\"startDate\" content=\"2017\"><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/PEE.2017.8171664' target='blank' itemprop=\"sameAs\">10.1109\/PEE.2017.8171664<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">F\u00f6rthner M.<\/span>, <span class=\"author\" itemprop=\"author\">Papenheim M.<\/span>, <span class=\"author\" itemprop=\"author\">Rumler M.<\/span>, <span class=\"author\" itemprop=\"author\">Stumpf F.<\/span>, <span class=\"author\" itemprop=\"author\">Baier L.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Scheer HC.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/119457624?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Polymerization related deformations in multilayer soft stamps for nanoimprint<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_119457624\"><span itemprop=\"name\"><strong>Journal of Applied Physics<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_119457624\" \/><span itemprop=\"volumeNumber\">122<\/span><\/span>  (<span itemprop=\"datePublished\">2017<\/span>), Article No.: <span itemprop=\"pagination\">165305<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_119457624\"><span itemprop=\"issn\">ISSN: 0021-8979<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1063\/1.5001463' target='blank' itemprop=\"sameAs\">10.1063\/1.5001463<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Girschikofsky MG.<\/span>, <span class=\"author\" itemprop=\"author\">F\u00f6rthner M.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Hellmann R.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106460464?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Fabrication of Bragg grating sensors in UV-NIL structured Ormocer waveguides<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">Integrated Optics: Devices, Materials, and Technologies XXI 2017<\/span><span itemprop=\"startDate\" content=\"2017\"><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1117\/12.2249665' target='blank' itemprop=\"sameAs\">10.1117\/12.2249665<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Girschikofsky MG.<\/span>, <span class=\"author\" itemprop=\"author\">Rosenberger M.<\/span>, <span class=\"author\" itemprop=\"author\">F\u00f6rthner M.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Hellmann R.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/119458504?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Waveguide Bragg Gratings in Ormocer\u00aes for Temperature Sensing<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_119458504\"><span itemprop=\"name\"><strong>Sensors<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_119458504\" \/><span itemprop=\"volumeNumber\">17<\/span><\/span>  (<span itemprop=\"datePublished\">2017<\/span>), Article No.: <span itemprop=\"pagination\">2459<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_119458504\"><span itemprop=\"issn\">ISSN: 1424-8220<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.3390\/s17112459' target='blank' itemprop=\"sameAs\">10.3390\/s17112459<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Hutzler A.<\/span>, <span class=\"author\" itemprop=\"author\">Branscheid R.<\/span>, <span class=\"author\" itemprop=\"author\">Schmutzler T.<\/span>, <span class=\"author\" itemprop=\"author\">Jank M.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Spiecker E.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/207065529?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Controlled silver-shell growth on gold nanorods studied by in situ liquid cell TEM techniques<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">Microscopy Conference 2017<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Lausanne<\/span><\/span>, <span itemprop=\"startDate\" content=\"2017-08-21\">21. August 2017<\/span> - <span itemprop=\"endDate\" content=\"2017-08-25\">25. August 2017<\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"name\" style=\"font-weight:bold\">Microscopy Conference 2017 (MC 2017) - Proceedings<\/span> <span itemprop=\"datePublished\">2017<\/span><\/span><br \/>URL: <a href='https:\/\/epub.uni-regensburg.de\/36099\/' target='blank' itemprop=\"url\">https:\/\/epub.uni-regensburg.de\/36099\/<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Hutzler A.<\/span>, <span class=\"author\" itemprop=\"author\">Matthus C.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/110541024?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Generalized approach to design multi-layer stacks for enhanced optical detectability of ultrathin layers<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_110541024\"><span itemprop=\"name\"><strong>Applied Physics Letters<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_110541024\" \/><span itemprop=\"volumeNumber\">110<\/span><\/span>  (<span itemprop=\"datePublished\">2017<\/span>), Article No.: <span itemprop=\"pagination\">021909<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_110541024\"><span itemprop=\"issn\">ISSN: 0003-6951<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1063\/1.4973968' target='blank' itemprop=\"sameAs\">10.1063\/1.4973968<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">H\u00e4ublein V.<\/span>, <span class=\"author\" itemprop=\"author\">Birnbaum E.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Djupmyr M.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/109524844?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Ion Implantation of Polypropylene Films for the Manufacture of Thin Film Capacitors<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">21st International Conference on Ion Implantation Technology, IIT 2016<\/span><span itemprop=\"startDate\" content=\"2017\"><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/IIT.2016.7882887' target='blank' itemprop=\"sameAs\">10.1109\/IIT.2016.7882887<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">H\u00fcrner A.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/119457184?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Monolithically integrated solid-state-circuit-breaker for high power applications<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016<\/span><span itemprop=\"startDate\" content=\"2017\"><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4028\/www.scientific.net\/MSF.897.661' target='blank' itemprop=\"sameAs\">10.4028\/www.scientific.net\/MSF.897.661<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Matthus C.<\/span>, <span class=\"author\" itemprop=\"author\">Burenkov A.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/109957804?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Optimization of 4H-SiC photodiodes as selective UV sensors<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_109957804\"><span itemprop=\"name\"><strong>Materials Science Forum<\/strong><\/span><\/span> (<span itemprop=\"datePublished\">2017<\/span>), p. <span itemprop=\"pagination\">622-625<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_109957804\"><span itemprop=\"issn\">ISSN: 0255-5476<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4028\/www.scientific.net\/MSF.897.622' target='blank' itemprop=\"sameAs\">10.4028\/www.scientific.net\/MSF.897.622<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Matthus C.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>, <span class=\"author\" itemprop=\"author\">Hess A.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer AJ.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/201359742?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Advanced 4H-SiC p-i-n Diode as Highly Sensitive High-Temperature Sensor Up To 460 \u00b0C<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_201359742\"><span itemprop=\"name\"><strong>IEEE Transactions on Electron Devices<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_201359742\" \/><span itemprop=\"volumeNumber\">64<\/span><\/span>  (<span itemprop=\"datePublished\">2017<\/span>), p. <span itemprop=\"pagination\">3399-3404<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_201359742\"><span itemprop=\"issn\">ISSN: 0018-9383<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/TED.2017.2711271' target='blank' itemprop=\"sameAs\">10.1109\/TED.2017.2711271<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Matthus C.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>, <span class=\"author\" itemprop=\"author\">Sch\u00f6fer B.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/121803704?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Implementation of 4H-SiC PiN-diodes as nearly linear temperature sensors up to 800 K towards SiC multi-sensor integration<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_121803704\"><span itemprop=\"name\"><strong>Materials Science Forum<\/strong><\/span><\/span> (<span itemprop=\"datePublished\">2017<\/span>), p. <span itemprop=\"pagination\">618-621<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_121803704\"><span itemprop=\"issn\">ISSN: 0255-5476<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4028\/www.scientific.net\/MSF.897.618' target='blank' itemprop=\"sameAs\">10.4028\/www.scientific.net\/MSF.897.618<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Meister T.<\/span>, <span class=\"author\" itemprop=\"author\">Ellinger F.<\/span>, <span class=\"author\" itemprop=\"author\">Bartha JW.<\/span>, <span class=\"author\" itemprop=\"author\">Berroth M.<\/span>, <span class=\"author\" itemprop=\"author\">Burghartz J.<\/span>, <span class=\"author\" itemprop=\"author\">Claus M.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Gagliardi A.<\/span>, <span class=\"author\" itemprop=\"author\">Grundmann M.<\/span>, <span class=\"author\" itemprop=\"author\">Hesselbarth J.<\/span>, <span class=\"author\" itemprop=\"author\">Klauk H.<\/span>, <span class=\"author\" itemprop=\"author\">Leo K.<\/span>, <span class=\"author\" itemprop=\"author\">Lugli P.<\/span>, <span class=\"author\" itemprop=\"author\">Mannsfeld S.<\/span>, <span class=\"author\" itemprop=\"author\">Manoli Y.<\/span>, <span class=\"author\" itemprop=\"author\">Negra R.<\/span>, <span class=\"author\" itemprop=\"author\">Neumaier D.<\/span>, <span class=\"author\" itemprop=\"author\">Pfeiffer U.<\/span>, <span class=\"author\" itemprop=\"author\">Riedl T.<\/span>, <span class=\"author\" itemprop=\"author\">Scheinert S.<\/span>, <span class=\"author\" itemprop=\"author\">Scherf U.<\/span>, <span class=\"author\" itemprop=\"author\">Thiede A.<\/span>, <span class=\"author\" itemprop=\"author\">Tr\u00f6ster G.<\/span>, <span class=\"author\" itemprop=\"author\">Vossiek M.<\/span>, <span class=\"author\" itemprop=\"author\">Weigel R.<\/span>, <span class=\"author\" itemprop=\"author\">Wenger C.<\/span>, <span class=\"author\" itemprop=\"author\">Alavi G.<\/span>, <span class=\"author\" itemprop=\"author\">Becherer M.<\/span>, <span class=\"author\" itemprop=\"author\">Chavarin CA.<\/span>, <span class=\"author\" itemprop=\"author\">Darwish M.<\/span>, <span class=\"author\" itemprop=\"author\">Ellinger M.<\/span>, <span class=\"author\" itemprop=\"author\">Fan CY.<\/span>, <span class=\"author\" itemprop=\"author\">Fritsch M.<\/span>, <span class=\"author\" itemprop=\"author\">Grotjahn F.<\/span>, <span class=\"author\" itemprop=\"author\">Gunia M.<\/span>, <span class=\"author\" itemprop=\"author\">Haase K.<\/span>, <span class=\"author\" itemprop=\"author\">Hillger P.<\/span>, <span class=\"author\" itemprop=\"author\">Ishida K.<\/span>, <span class=\"author\" itemprop=\"author\">Jank M.<\/span>, <span class=\"author\" itemprop=\"author\">Knobelspies S.<\/span>, <span class=\"author\" itemprop=\"author\">Kuhl M.<\/span>, <span class=\"author\" itemprop=\"author\">Lupina G.<\/span>, <span class=\"author\" itemprop=\"author\">Naghadeh SM.<\/span>, <span class=\"author\" itemprop=\"author\">M\u00fcnzenrieder N.<\/span>, <span class=\"author\" itemprop=\"author\">\u00d6zbek S.<\/span>, <span class=\"author\" itemprop=\"author\">Rasteh M.<\/span>, <span class=\"author\" itemprop=\"author\">Salvatore GA.<\/span>, <span class=\"author\" itemprop=\"author\">Schr\u00fcfer D.<\/span>, <span class=\"author\" itemprop=\"author\">Strobel C.<\/span>, <span class=\"author\" itemprop=\"author\">Theisen M.<\/span>, <span class=\"author\" itemprop=\"author\">Tuckmantel C.<\/span>, <span class=\"author\" itemprop=\"author\">Von Wenckstern H.<\/span>, <span class=\"author\" itemprop=\"author\">Wang Z.<\/span>, <span class=\"author\" itemprop=\"author\">Zhang Z.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/200162764?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Program FFlexCom - High frequency flexible bendable electronics for wireless communication systems<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"name\" style=\"font-weight:bold\">2017 IEEE International Conference on Microwaves, Antennas, Communications and Electronic Systems (COMCAS)<\/span> <span itemprop=\"datePublished\">2017<\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/COMCAS.2017.8244733' target='blank' itemprop=\"sameAs\">10.1109\/COMCAS.2017.8244733<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Rosenberger M.<\/span>, <span class=\"author\" itemprop=\"author\">Roth G-.<\/span>, <span class=\"author\" itemprop=\"author\">Adelmann B.<\/span>, <span class=\"author\" itemprop=\"author\">Schmau\u00df B.<\/span>, <span class=\"author\" itemprop=\"author\">Hellmann R.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/122836604?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Temperature Referenced Planar Bragg Grating Strain Sensor in fs-Laser Cut COC Specimen<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_122836604\"><span itemprop=\"name\"><strong>IEEE Photonics Technology Letters<\/strong><\/span><\/span> (<span itemprop=\"datePublished\">2017<\/span>)<br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_122836604\"><span itemprop=\"issn\">ISSN: 1041-1135<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/LPT.2017.2693401' target='blank' itemprop=\"sameAs\">10.1109\/LPT.2017.2693401<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Schimmel S.<\/span>, <span class=\"author\" itemprop=\"author\">Koch M.<\/span>, <span class=\"author\" itemprop=\"author\">Macher P.<\/span>, <span class=\"author\" itemprop=\"author\">Kimmel AC.<\/span>, <span class=\"author\" itemprop=\"author\">Steigerwald T.<\/span>, <span class=\"author\" itemprop=\"author\">Alt N.<\/span>, <span class=\"author\" itemprop=\"author\">Schl\u00fccker E.<\/span>, <span class=\"author\" itemprop=\"author\">Wellmann P.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/122188264?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Solubility and dissolution kinetics of GaN in supercritical ammonia in presence of ammonoacidic and ammonobasic mineralizers<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_122188264\"><span itemprop=\"name\"><strong>Journal of Crystal Growth<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_122188264\" \/><span itemprop=\"volumeNumber\">479<\/span><\/span>  (<span itemprop=\"datePublished\">2017<\/span>), p. <span itemprop=\"pagination\">59-66<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_122188264\"><span itemprop=\"issn\">ISSN: 0022-0248<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.jcrysgro.2017.09.027' target='blank' itemprop=\"sameAs\">10.1016\/j.jcrysgro.2017.09.027<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Schimmel S.<\/span>, <span class=\"author\" itemprop=\"author\">Meisel M.<\/span>, <span class=\"author\" itemprop=\"author\">Hertweck B.<\/span>, <span class=\"author\" itemprop=\"author\">Steigerwald T.<\/span>, <span class=\"author\" itemprop=\"author\">Nebel C.<\/span>, <span class=\"author\" itemprop=\"author\">Alt N.<\/span>, <span class=\"author\" itemprop=\"author\">Schl\u00fccker E.<\/span>, <span class=\"author\" itemprop=\"author\">Wellmann P.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/281272971?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Chemical stability of carbon-based inorganic construction materials for in situ x-ray measurements of ammonothermal crystal growth of nitrides<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">5th German-Swiss Conference on Crystal Growth<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Freiburg<\/span><\/span>, <span itemprop=\"startDate\" content=\"2017-03-08\">8. March 2017<\/span> - <span itemprop=\"endDate\" content=\"2017-03-10\">10. March 2017<\/span>)<\/span><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Steinberg C.<\/span>, <span class=\"author\" itemprop=\"author\">Rumler M.<\/span>, <span class=\"author\" itemprop=\"author\">Manuel RA.<\/span>, <span class=\"author\" itemprop=\"author\">Papenheim M.<\/span>, <span class=\"author\" itemprop=\"author\">Wang S.<\/span>, <span class=\"author\" itemprop=\"author\">Mayer A.<\/span>, <span class=\"author\" itemprop=\"author\">Becker M.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Scheer HC.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/213250641?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Complex 3D structures via double imprint of hybrid structures and sacrificial mould techniques<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_213250641\"><span itemprop=\"name\"><strong>Microelectronic Engineering<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_213250641\" \/><span itemprop=\"volumeNumber\">176<\/span><\/span>  (<span itemprop=\"datePublished\">2017<\/span>), p. <span itemprop=\"pagination\">22-27<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_213250641\"><span itemprop=\"issn\">ISSN: 0167-9317<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.mee.2017.01.009' target='blank' itemprop=\"sameAs\">10.1016\/j.mee.2017.01.009<\/a><\/li><\/ul><h3>2016<\/h3><ul class=\"cris-publications \" lang=\"en\"><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Albrecht M.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/121819104?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Potential of 4H-SiC CMOS for high temperature applications using advanced lateral p-MOSFETs<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_121819104\"><span itemprop=\"name\"><strong>Materials Science Forum<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_121819104\" \/><span itemprop=\"volumeNumber\">858<\/span><\/span>  (<span itemprop=\"datePublished\">2016<\/span>), p. <span itemprop=\"pagination\">821-824<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_121819104\"><span itemprop=\"issn\">ISSN: 0255-5476<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4028\/www.scientific.net\/MSF.858.821' target='blank' itemprop=\"sameAs\">10.4028\/www.scientific.net\/MSF.858.821<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Banzhaf S.<\/span>, <span class=\"author\" itemprop=\"author\">Schwaiger S.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/108867484?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Post-Trench Processing of Silicon Deep Trench Capacitors for Power Electronic Applications<\/a><\/strong><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/ISPSD.2016.7520862' target='blank' itemprop=\"sameAs\">10.1109\/ISPSD.2016.7520862<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Burenkov A.<\/span>, <span class=\"author\" itemprop=\"author\">Matthus C.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/108845924?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Optimization of 4H-SiC UV Photodiode Performance Using Numerical Process and Device Simulation<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_108845924\"><span itemprop=\"name\"><strong>IEEE Sensors Journal<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_108845924\" \/><span itemprop=\"volumeNumber\">16<\/span><\/span>  (<span itemprop=\"datePublished\">2016<\/span>), p. <span itemprop=\"pagination\">4246-4252<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_108845924\"><span itemprop=\"issn\">ISSN: 1530-437X<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/JSEN.2016.2539598' target='blank' itemprop=\"sameAs\">10.1109\/JSEN.2016.2539598<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Ditze S.<\/span>, <span class=\"author\" itemprop=\"author\">Endruschat A.<\/span>, <span class=\"author\" itemprop=\"author\">Schriefer T.<\/span>, <span class=\"author\" itemprop=\"author\">Rosskopf A.<\/span>, <span class=\"author\" itemprop=\"author\">Heckel T.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/110124344?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Inductive power transfer system with a rotary transformer for contactless energy transfer on rotating applications<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">2016 IEEE International Symposium on Circuits and Systems, ISCAS 2016<\/span><span itemprop=\"startDate\" content=\"2016\"><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/ISCAS.2016.7538876' target='blank' itemprop=\"sameAs\">10.1109\/ISCAS.2016.7538876<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Endruschat A.<\/span>, <span class=\"author\" itemprop=\"author\">Heckel T.<\/span>, <span class=\"author\" itemprop=\"author\">Reiner R.<\/span>, <span class=\"author\" itemprop=\"author\">Waltereit P.<\/span>, <span class=\"author\" itemprop=\"author\">Quay R.<\/span>, <span class=\"author\" itemprop=\"author\">Ambacher O.<\/span>, <span class=\"author\" itemprop=\"author\">M\u00e4rz M.<\/span>, <span class=\"author\" itemprop=\"author\">Eckardt B.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/108868144?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Slew rate control of a 600 V 55 m\u03a9 GaN cascode<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">4th IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2016<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Fayetteville, AR<\/span><\/span>, <span itemprop=\"startDate\" content=\"2016-11-07\">7. November 2016<\/span> - <span itemprop=\"endDate\" content=\"2016-11-09\">9. November 2016<\/span>)<\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/WiPDA.2016.7799963' target='blank' itemprop=\"sameAs\">10.1109\/WiPDA.2016.7799963<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">F\u00f6rthner M.<\/span>, <span class=\"author\" itemprop=\"author\">Hellmann R.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Girschikofsky MG.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/122475584?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Waveguide Bragg gratings in Ormocer hybrid polymers<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_122475584\"><span itemprop=\"name\"><strong>Optics Express<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_122475584\" \/><span itemprop=\"volumeNumber\">24<\/span><\/span>  (<span itemprop=\"datePublished\">2016<\/span>), p. <span itemprop=\"pagination\">14725-14736<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_122475584\"><span itemprop=\"issn\">ISSN: 1094-4087<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1364\/OE.24.014725' target='blank' itemprop=\"sameAs\">10.1364\/OE.24.014725<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">F\u00f6rthner M.<\/span>, <span class=\"author\" itemprop=\"author\">Rumler M.<\/span>, <span class=\"author\" itemprop=\"author\">Stumpf F.<\/span>, <span class=\"author\" itemprop=\"author\">Fader R.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Girschikofsky M.<\/span>, <span class=\"author\" itemprop=\"author\">Belle S.<\/span>, <span class=\"author\" itemprop=\"author\">Hellmann R.<\/span>, <span class=\"author\" itemprop=\"author\">Klein JJ.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/121365904?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Hybrid polymers processed by substrate conformal imprint lithography for the fabrication of planar Bragg gratings<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_121365904\"><span itemprop=\"name\"><strong>Applied Physics A-Materials Science & Processing<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_121365904\" \/><span itemprop=\"volumeNumber\">122<\/span><\/span>  (<span itemprop=\"datePublished\">2016<\/span>)<br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_121365904\"><span itemprop=\"issn\">ISSN: 0947-8396<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1007\/s00339-016-9767-6' target='blank' itemprop=\"sameAs\">10.1007\/s00339-016-9767-6<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Gruenler S.<\/span>, <span class=\"author\" itemprop=\"author\">Rattmann G.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer AJ.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/201400798?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Monolithic 3D TSV-based high-voltage, high-temperature capacitors<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_201400798\"><span itemprop=\"name\"><strong>Microelectronic Engineering<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_201400798\" \/><span itemprop=\"volumeNumber\">156<\/span><\/span>  (<span itemprop=\"datePublished\">2016<\/span>), p. <span itemprop=\"pagination\">19-23<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_201400798\"><span itemprop=\"issn\">ISSN: 0167-9317<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.mee.2016.02.008' target='blank' itemprop=\"sameAs\">10.1016\/j.mee.2016.02.008<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Heckel T.<\/span>, <span class=\"author\" itemprop=\"author\">Rettner C.<\/span>, <span class=\"author\" itemprop=\"author\">M\u00e4rz M.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/110122144?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Fundamental Efficiency Limits in Power Electronic Systems<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">2015 IEEE International Telecommunications Energy Conference, INTELEC 2015<\/span><span itemprop=\"startDate\" content=\"2016\"><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/INTLEC.2015.7572399' target='blank' itemprop=\"sameAs\">10.1109\/INTLEC.2015.7572399<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Hutzler A.<\/span>, <span class=\"author\" itemprop=\"author\">Branscheid R.<\/span>, <span class=\"author\" itemprop=\"author\">Jank M.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Spiecker E.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/123076184?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Graphene-Supported Microwell Liquid Cell for In Situ Electron Microscopy in Materials Science<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_123076184\"><span itemprop=\"name\"><strong>Microscopy and Microanalysis<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_123076184\" \/><span itemprop=\"volumeNumber\">22<\/span><\/span>  (<span itemprop=\"datePublished\">2016<\/span>), p. <span itemprop=\"pagination\">78 - 79<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_123076184\"><span itemprop=\"issn\">ISSN: 1431-9276<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1017\/S1431927616012423' target='blank' itemprop=\"sameAs\">10.1017\/S1431927616012423<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Hutzler A.<\/span>, <span class=\"author\" itemprop=\"author\">Branscheid R.<\/span>, <span class=\"author\" itemprop=\"author\">Jank M.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Spiecker E.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/207064552?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Graphene\u2010supported microwell liquid cell for in situ studies in TEM and SEM<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">European Microscopy Congress 2016<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Lyon<\/span><\/span>, <span itemprop=\"startDate\" content=\"2016-08-28\">28. August 2016<\/span> - <span itemprop=\"endDate\" content=\"2016-09-02\">2. September 2016<\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"name\" style=\"font-weight:bold\">European Microscopy Congress 2016 Volume 1: Instrumentation and Methods<\/span> <span itemprop=\"datePublished\">2016<\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1002\/9783527808465.EMC2016.6612' target='blank' itemprop=\"sameAs\">10.1002\/9783527808465.EMC2016.6612<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/Book\"><span class=\"author\" itemprop=\"author\">H\u00fcrner A.<\/span>, <span class=\"author\" itemprop=\"author\">Mitlehner H.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106511504?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Conduction loss reduction for bipolar injection field-effect-transistors (BIFET)<\/a><\/strong><\/span><br \/><span itemprop=\"publisher\" itemscope itemtype=\"http:\/\/schema.org\/Organization\"><span itemprop=\"name\">Trans Tech Publications Ltd<\/span><\/span>, <span itemprop=\"datePublished\">2016<\/span><br \/><span itemprop=\"isbn\">ISBN: 9783035710427<\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4028\/www.scientific.net\/MSF.858.917' target='blank' itemprop=\"sameAs\">10.4028\/www.scientific.net\/MSF.858.917<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Jelinek M.<\/span>, <span class=\"author\" itemprop=\"author\">Laven JG.<\/span>, <span class=\"author\" itemprop=\"author\">Ganagona N.<\/span>, <span class=\"author\" itemprop=\"author\">Job R.<\/span>, <span class=\"author\" itemprop=\"author\">Schustereder W.<\/span>, <span class=\"author\" itemprop=\"author\">Schulze HJ.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/117332204?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Metastable defects in proton implanted and annealed silicon<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_117332204\"><span itemprop=\"name\"><strong>Solid State Phenomena<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_117332204\" \/><span itemprop=\"volumeNumber\">242<\/span><\/span>  (<span itemprop=\"datePublished\">2016<\/span>), p. <span itemprop=\"pagination\">169-174<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_117332204\"><span itemprop=\"issn\">ISSN: 1012-0394<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4028\/www.scientific.net\/SSP.242.169' target='blank' itemprop=\"sameAs\">10.4028\/www.scientific.net\/SSP.242.169<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/Book\"><span class=\"author\" itemprop=\"author\">Jelinek M.<\/span>, <span class=\"author\" itemprop=\"author\">Laven JG.<\/span>, <span class=\"author\" itemprop=\"author\">Ganagona N.<\/span>, <span class=\"author\" itemprop=\"author\">Schustereder W.<\/span>, <span class=\"author\" itemprop=\"author\">Schulze HJ.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/120873764?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">The efficiency of hydrogen-doping as a function of implantation temperature<\/a><\/strong><\/span><br \/><span itemprop=\"publisher\" itemscope itemtype=\"http:\/\/schema.org\/Organization\"><span itemprop=\"name\">Trans Tech Publications Ltd<\/span><\/span>, <span itemprop=\"datePublished\">2016<\/span><br \/><span itemprop=\"isbn\">ISBN: 9783038356080<\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4028\/www.scientific.net\/SSP.242.175' target='blank' itemprop=\"sameAs\">10.4028\/www.scientific.net\/SSP.242.175<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Krach F.<\/span>, <span class=\"author\" itemprop=\"author\">Heckel T.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>, <span class=\"author\" itemprop=\"author\">M\u00e4rz M.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/110269984?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Innovative Monolithic RC-Snubber for Fast Switching Power Modules<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">9th International Conference on Integrated Power Electronics Systems (CIPS)<\/span><span itemprop=\"startDate\" content=\"2016\"><\/span><\/span><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Krach F.<\/span>, <span class=\"author\" itemprop=\"author\">Thielen N.<\/span>, <span class=\"author\" itemprop=\"author\">Heckel T.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Heckel T.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/122475144?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Silicon integrated RC snubbers for applications up to 900V with reduced mechanical stress and high manufacturability<\/a><\/strong><\/span><br \/> (<span itemprop=\"datePublished\">2016<\/span>), Article No.: <span itemprop=\"pagination\">7548452<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_122475144\"><span itemprop=\"issn\">ISSN: 15483770<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/DRC.2016.7548452' target='blank' itemprop=\"sameAs\">10.1109\/DRC.2016.7548452<\/a><br \/>(anderer)<\/li><li itemscope itemtype=\"http:\/\/schema.org\/Book\"><span class=\"author\" itemprop=\"author\">Kreutzer O.<\/span>, <span class=\"author\" itemprop=\"author\">Heckel T.<\/span>, <span class=\"author\" itemprop=\"author\">M\u00e4rz M.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/110010164?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Using SiC MOSFET\u2019s full potential \u2013 Switching faster than 200 kV\/\u03bcs<\/a><\/strong><\/span><br \/><span itemprop=\"publisher\" itemscope itemtype=\"http:\/\/schema.org\/Organization\"><span itemprop=\"name\">Trans Tech Publications Ltd<\/span><\/span>, <span itemprop=\"datePublished\">2016<\/span><br \/><span itemprop=\"isbn\">ISBN: 9783035710427<\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4028\/www.scientific.net\/MSF.858.880' target='blank' itemprop=\"sameAs\">10.4028\/www.scientific.net\/MSF.858.880<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\">Puls Rainer, Puls Oliver, Hilligardt Andreas, K\u00fchn Stephan:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/360662597?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Drive System for an Electrically Powered Vehicle<\/a><\/strong><\/span><br \/> (<span itemprop=\"datePublished\">2016<\/span>)<\/span><br \/>(anderer)<\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Liu X.<\/span>, <span class=\"author\" itemprop=\"author\">Wegener CM.<\/span>, <span class=\"author\" itemprop=\"author\">Polster S.<\/span>, <span class=\"author\" itemprop=\"author\">Jank M.<\/span>, <span class=\"author\" itemprop=\"author\">Roosen A.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/108866824?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Materials Integration for Printed Zinc Oxide Thin-Film Transistors: Engineering of a Fully-Printed Semiconductor\/Contact Scheme<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_108866824\"><span itemprop=\"name\"><strong>Journal of Display Technology<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_108866824\" \/><span itemprop=\"volumeNumber\">12<\/span><\/span>  (<span itemprop=\"datePublished\">2016<\/span>)<br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_108866824\"><span itemprop=\"issn\">ISSN: 1551-319X<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/JDT.2015.2445378' target='blank' itemprop=\"sameAs\">10.1109\/JDT.2015.2445378<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Lorentz V.<\/span>, <span class=\"author\" itemprop=\"author\">Schwarz R.<\/span>, <span class=\"author\" itemprop=\"author\">Heckel T.<\/span>, <span class=\"author\" itemprop=\"author\">M\u00e4rz M.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Heckel T.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/109514944?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Integrated galvanically isolated MOSFET and IGBT gate-driver circuit with switching speed control<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">41st Annual Conference of the IEEE Industrial Electronics Society, IECON 2015<\/span><span itemprop=\"startDate\" content=\"2016\"><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/IECON.2015.7392158' target='blank' itemprop=\"sameAs\">10.1109\/IECON.2015.7392158<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Matthus C.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>, <span class=\"author\" itemprop=\"author\">Burenkov A.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/108844824?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Ion implanted 4H-SiC UV pin-diodes for solar radiation detection \u2013 Simulation and characterization<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_108844824\"><span itemprop=\"name\"><strong>Materials Science Forum<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_108844824\" \/><span itemprop=\"volumeNumber\">858<\/span><\/span>  (<span itemprop=\"datePublished\">2016<\/span>), p. <span itemprop=\"pagination\">1032-1035<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_108844824\"><span itemprop=\"issn\">ISSN: 0255-5476<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4028\/www.scientific.net\/MSF.858.1032' target='blank' itemprop=\"sameAs\">10.4028\/www.scientific.net\/MSF.858.1032<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Meric Z.<\/span>, <span class=\"author\" itemprop=\"author\">Mehringer C.<\/span>, <span class=\"author\" itemprop=\"author\">Jank MPM.<\/span>, <span class=\"author\" itemprop=\"author\">Peukert W.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/201400157?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Electrical properties of solution processed layers based on Ge-Si alloy nanoparticles<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_201400157\"><span itemprop=\"name\"><strong>MRS Advances<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_201400157\" \/><span itemprop=\"volumeNumber\">1<\/span><\/span>  (<span itemprop=\"datePublished\">2016<\/span>), p. <span itemprop=\"pagination\">2331-2336<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_201400157\"><span itemprop=\"issn\">ISSN: 2059-8521<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1557\/adv.2016.329' target='blank' itemprop=\"sameAs\">10.1557\/adv.2016.329<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Munoz LE.<\/span>, <span class=\"author\" itemprop=\"author\">Bilyy R.<\/span>, <span class=\"author\" itemprop=\"author\">Biermann MHC.<\/span>, <span class=\"author\" itemprop=\"author\">Kienhoefer D.<\/span>, <span class=\"author\" itemprop=\"author\">Mauer\u00f6der C.<\/span>, <span class=\"author\" itemprop=\"author\">Hahn J.<\/span>, <span class=\"author\" itemprop=\"author\">Brauner JM.<\/span>, <span class=\"author\" itemprop=\"author\">Weidner D.<\/span>, <span class=\"author\" itemprop=\"author\">Chen J.<\/span>, <span class=\"author\" itemprop=\"author\">Scharin-Mehlmann M.<\/span>, <span class=\"author\" itemprop=\"author\">Janko C.<\/span>, <span class=\"author\" itemprop=\"author\">Friedrich RP.<\/span>, <span class=\"author\" itemprop=\"author\">Mielenz D.<\/span>, <span class=\"author\" itemprop=\"author\">Dumych T.<\/span>, <span class=\"author\" itemprop=\"author\">Lootsik MD.<\/span>, <span class=\"author\" itemprop=\"author\">Schauer C.<\/span>, <span class=\"author\" itemprop=\"author\">Schett G.<\/span>, <span class=\"author\" itemprop=\"author\">Hoffmann M.<\/span>, <span class=\"author\" itemprop=\"author\">Zhao Y.<\/span>, <span class=\"author\" itemprop=\"author\">Herrmann M.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/119346304?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Nanoparticles size-dependently initiate self-limiting NETosis-driven inflammation<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_119346304\"><span itemprop=\"name\"><strong>Proceedings of the National Academy of Sciences of the United States of America<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_119346304\" \/><span itemprop=\"volumeNumber\">113<\/span><\/span>  (<span itemprop=\"datePublished\">2016<\/span>), p. <span itemprop=\"pagination\">E5856-E5865<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_119346304\"><span itemprop=\"issn\">ISSN: 0027-8424<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1073\/pnas.1602230113' target='blank' itemprop=\"sameAs\">10.1073\/pnas.1602230113<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Oertel S.<\/span>, <span class=\"author\" itemprop=\"author\">Jank M.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Hofmann C.<\/span>, <span class=\"author\" itemprop=\"author\">Lang N.<\/span>, <span class=\"author\" itemprop=\"author\">Struck M.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/109516044?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Screen-printed biochemical sensors for detection of ammonia levels in sweat - Towards integration with vital parameter monitoring sports gear<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">9th International Conference on Biomedical Electronics and Devices, BIODEVICES 2016 - Part of 9th International Joint Conference on Biomedical Engineering Systems and Technologies, BIOSTEC 2016<\/span><span itemprop=\"startDate\" content=\"2016\"><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.5220\/0005691501600165' target='blank' itemprop=\"sameAs\">10.5220\/0005691501600165<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Pobegen G.<\/span>, <span class=\"author\" itemprop=\"author\">Wei\u00dfe J.<\/span>, <span class=\"author\" itemprop=\"author\">Hauck M.<\/span>, <span class=\"author\" itemprop=\"author\">Weber HB.<\/span>, <span class=\"author\" itemprop=\"author\">Krieger M.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/122480644?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">On the origin of threshold voltage instability under operating conditions of 4H-SiC n-channel MOSFETs<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_122480644\"><span itemprop=\"name\"><strong>Materials Science Forum<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_122480644\" \/><span itemprop=\"volumeNumber\">858<\/span><\/span>  (<span itemprop=\"datePublished\">2016<\/span>)<br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_122480644\"><span itemprop=\"issn\">ISSN: 0255-5476<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4028\/www.scientific.net\/MSF.858.473' target='blank' itemprop=\"sameAs\">10.4028\/www.scientific.net\/MSF.858.473<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Polster S.<\/span>, <span class=\"author\" itemprop=\"author\">Jank M.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/108866384?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Correlation of film morphology and defect content with the charge-carrier transport in thin-film transistors based on ZnO nanoparticles<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_108866384\"><span itemprop=\"name\"><strong>Journal of Applied Physics<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_108866384\" \/><span itemprop=\"volumeNumber\">119<\/span><\/span>  (<span itemprop=\"datePublished\">2016<\/span>)<br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_108866384\"><span itemprop=\"issn\">ISSN: 0021-8979<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1063\/1.4939289' target='blank' itemprop=\"sameAs\">10.1063\/1.4939289<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Preuster P.<\/span>, <span class=\"author\" itemprop=\"author\">Wagner L.<\/span>, <span class=\"author\" itemprop=\"author\">Nu\u00df A.<\/span>, <span class=\"author\" itemprop=\"author\">Geiling J.<\/span>, <span class=\"author\" itemprop=\"author\">Steinberger M.<\/span>, <span class=\"author\" itemprop=\"author\">B\u00f6smann A.<\/span>, <span class=\"author\" itemprop=\"author\">Wasserscheid P.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/118200984?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Evaluation of a novel reactor concept for the process intensification and intelligent heat management in the hydrogenation and dehydrogenation of Liquid Organic Hydrogen Carriers<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">21st World Hydrogen Energy Conference 2016, WHEC 2016<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Saragossa<\/span><\/span>, <span itemprop=\"startDate\" content=\"2016-06-13\">13. June 2016<\/span> - <span itemprop=\"endDate\" content=\"2016-06-16\">16. June 2016<\/span>)<\/span><br \/>URL: <a href='https:\/\/www.scopus.com\/inward\/record.uri?partnerID=HzOxMe3b&amp;scp=85016937508&amp;origin=inward' target='blank' itemprop=\"url\">https:\/\/www.scopus.com\/inward\/record.uri?partnerID=HzOxMe3b&amp;scp=85016937508&amp;origin=inward<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Rumler M.<\/span>, <span class=\"author\" itemprop=\"author\">Kollmuss M.<\/span>, <span class=\"author\" itemprop=\"author\">Baier L.<\/span>, <span class=\"author\" itemprop=\"author\">Michel F.<\/span>, <span class=\"author\" itemprop=\"author\">F\u00f6rthner M.<\/span>, <span class=\"author\" itemprop=\"author\">Becker M.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/108849884?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Combination of direct laser writing and soft lithography molds for combined nano- and microfabrication<\/a><\/strong><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1117\/12.2248219' target='blank' itemprop=\"sameAs\">10.1117\/12.2248219<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Sanftl B.<\/span>, <span class=\"author\" itemprop=\"author\">Joffe C.<\/span>, <span class=\"author\" itemprop=\"author\">Trautmann M.<\/span>, <span class=\"author\" itemprop=\"author\">Weigel R.<\/span>, <span class=\"author\" itemprop=\"author\">K\u00f6lpin A.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106988684?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Reliabe Data Link for Power Transfer Control in an Inductive Charging System for Electric Vehicles<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">IEEE MTT-S International Conference on Microwaves for Intelligent Mobility<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">San Diego, USA<\/span><\/span><span itemprop=\"startDate\" content=\"2016\"><\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"name\" style=\"font-weight:bold\">IEEE MTT-S International Conference on Microwaves for Intelligent Mobility<\/span> <span itemprop=\"datePublished\">2016<\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/ICMIM.2016.7533929' target='blank' itemprop=\"sameAs\">10.1109\/ICMIM.2016.7533929<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Schriefer T.<\/span>, <span class=\"author\" itemprop=\"author\">Hofmann M.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/217012247?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Mechanical Reliability of Power Electronic Systems<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">9th International Conference on Integrated Power Electronics Systems<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Nuremberg<\/span><\/span>, <span itemprop=\"startDate\" content=\"2016-03-08\">8. March 2016<\/span> - <span itemprop=\"endDate\" content=\"2016-03-10\">10. March 2016<\/span>)<\/span><br \/>URL: <a href='https:\/\/ieeexplore.ieee.org\/document\/7736747' target='blank' itemprop=\"url\">https:\/\/ieeexplore.ieee.org\/document\/7736747<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Spitzer P.<\/span>, <span class=\"author\" itemprop=\"author\">Condic M.<\/span>, <span class=\"author\" itemprop=\"author\">Herrmann M.<\/span>, <span class=\"author\" itemprop=\"author\">Oberstein T.<\/span>, <span class=\"author\" itemprop=\"author\">Scharin-Mehlmann M.<\/span>, <span class=\"author\" itemprop=\"author\">Gilbert D.<\/span>, <span class=\"author\" itemprop=\"author\">Friedrich O.<\/span>, <span class=\"author\" itemprop=\"author\">Groemer T.<\/span>, <span class=\"author\" itemprop=\"author\">Kornhuber J.<\/span>, <span class=\"author\" itemprop=\"author\">Lang R.<\/span>, <span class=\"author\" itemprop=\"author\">Maler JM.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/110902044?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Amyloidogenic amyloid-?-peptide variants induce microbial agglutination and exert antimicrobial activity<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_110902044\"><span itemprop=\"name\"><strong>Scientific Reports<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_110902044\" \/><span itemprop=\"volumeNumber\">6<\/span><\/span>  (<span itemprop=\"datePublished\">2016<\/span>), p. <span itemprop=\"pagination\">32228<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_110902044\"><span itemprop=\"issn\">ISSN: 2045-2322<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1038\/srep32228' target='blank' itemprop=\"sameAs\">10.1038\/srep32228<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Toumi, S. S.<\/span>, <span class=\"author\" itemprop=\"author\">Ouennoughi Z.<\/span>, <span class=\"author\" itemprop=\"author\">Strenger C.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/123513324?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Determination of Fowler-Nordheim tunneling parameters in Metal-Oxide-Semiconductor structure including oxide field correction using a vertical optimization method<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_123513324\"><span itemprop=\"name\"><strong>Solid-State Electronics<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_123513324\" \/><span itemprop=\"volumeNumber\">122<\/span><\/span>  (<span itemprop=\"datePublished\">2016<\/span>), p. <span itemprop=\"pagination\">56-63<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_123513324\"><span itemprop=\"issn\">ISSN: 0038-1101<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.sse.2016.04.007' target='blank' itemprop=\"sameAs\">10.1016\/j.sse.2016.04.007<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Trautmann M.<\/span>, <span class=\"author\" itemprop=\"author\">Joffe C.<\/span>, <span class=\"author\" itemprop=\"author\">Pflaum F.<\/span>, <span class=\"author\" itemprop=\"author\">Sanftl B.<\/span>, <span class=\"author\" itemprop=\"author\">Weigel R.<\/span>, <span class=\"author\" itemprop=\"author\">Heckel T.<\/span>, <span class=\"author\" itemprop=\"author\">K\u00f6lpin A.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/108107824?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Implementation of Simultaneous Energy and Data Transfer in a Contactless Connector<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">IEEE Topical Conference on Wireless Sensors and Sensor Networks (WiSNet)<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Austin, TX<\/span><\/span><span itemprop=\"startDate\" content=\"2016\"><\/span>)<\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/WISNET.2016.7444333' target='blank' itemprop=\"sameAs\">10.1109\/WISNET.2016.7444333<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Wegener CM.<\/span>, <span class=\"author\" itemprop=\"author\">Spiehl D.<\/span>, <span class=\"author\" itemprop=\"author\">Sauer HM.<\/span>, <span class=\"author\" itemprop=\"author\">Mikschl F.<\/span>, <span class=\"author\" itemprop=\"author\">Liu X.<\/span>, <span class=\"author\" itemprop=\"author\">K\u00f6lpin N.<\/span>, <span class=\"author\" itemprop=\"author\">Schmidt M.<\/span>, <span class=\"author\" itemprop=\"author\">Jank M.<\/span>, <span class=\"author\" itemprop=\"author\">D\u00f6rsam E.<\/span>, <span class=\"author\" itemprop=\"author\">Roosen A.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/114448884?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Flexographic printing of nanoparticulate tin-doped indium oxide inks on PET foils and glass substrates<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_114448884\"><span itemprop=\"name\"><strong>Journal of Materials Science<\/strong><\/span><\/span> (<span itemprop=\"datePublished\">2016<\/span>)<br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_114448884\"><span itemprop=\"issn\">ISSN: 0022-2461<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1007\/s10853-016-9772-3' target='blank' itemprop=\"sameAs\">10.1007\/s10853-016-9772-3<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Xie F.<\/span>, <span class=\"author\" itemprop=\"author\">Wei\u00df R.<\/span>, <span class=\"author\" itemprop=\"author\">Weigel R.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/108151604?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Simple Mathematical Operation-Based Calibration Method for Giant Magnetoresistive Current Sensor Applying B-Spline Modeling<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_108151604\"><span itemprop=\"name\"><strong>IEEE Sensors Journal<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_108151604\" \/><span itemprop=\"volumeNumber\">16<\/span><\/span>  (<span itemprop=\"datePublished\">2016<\/span>), p. <span itemprop=\"pagination\">4733-4739<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_108151604\"><span itemprop=\"issn\">ISSN: 1530-437X<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/JSEN.2016.2558468' target='blank' itemprop=\"sameAs\">10.1109\/JSEN.2016.2558468<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Zhou X.<\/span>, <span class=\"author\" itemprop=\"author\">H\u00e4ublein V.<\/span>, <span class=\"author\" itemprop=\"author\">Liu N.<\/span>, <span class=\"author\" itemprop=\"author\">Nguyen NT.<\/span>, <span class=\"author\" itemprop=\"author\">Zolnhofer E.<\/span>, <span class=\"author\" itemprop=\"author\">Tsuchiya H.<\/span>, <span class=\"author\" itemprop=\"author\">Manuela K.<\/span>, <span class=\"author\" itemprop=\"author\">Meyer K.<\/span>, <span class=\"author\" itemprop=\"author\">Schmuki P.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/108868364?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">TiO2 Nanotubes: Nitrogen-Ion Implantation at Low Dose Provides Noble-Metal-Free Photocatalytic H-2-Evolution Activity<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_108868364\"><span itemprop=\"name\"><strong>Angewandte Chemie International Edition<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_108868364\" \/><span itemprop=\"volumeNumber\">55<\/span><\/span>  (<span itemprop=\"datePublished\">2016<\/span>), p. <span itemprop=\"pagination\">3763-3767<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_108868364\"><span itemprop=\"issn\">ISSN: 1433-7851<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1002\/anie.201511580' target='blank' itemprop=\"sameAs\">10.1002\/anie.201511580<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Ziller J.<\/span>, <span class=\"author\" itemprop=\"author\">Dr\u00e4ger T.<\/span>, <span class=\"author\" itemprop=\"author\">Heckel T.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/122046364?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Inductive high data rate transmission for bearing systems<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">IEEE Topical Conference on Wireless Sensors and Sensor Networks, WiSNet 2016<\/span><span itemprop=\"startDate\" content=\"2016\"><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/WISNET.2016.7444332' target='blank' itemprop=\"sameAs\">10.1109\/WISNET.2016.7444332<\/a><\/li><\/ul><h3>2015<\/h3><ul class=\"cris-publications \" lang=\"en\"><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Adelmann B.<\/span>, <span class=\"author\" itemprop=\"author\">H\u00fcrner A.<\/span>, <span class=\"author\" itemprop=\"author\">Roth GL.<\/span>, <span class=\"author\" itemprop=\"author\">Hellmann R.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/207429611?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Back side ablation of SiC diodes using a q-switched NIR laser<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_207429611\"><span itemprop=\"name\"><strong>Journal of Laser Micro Nanoengineering<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_207429611\" \/><span itemprop=\"volumeNumber\">10<\/span><\/span>  (<span itemprop=\"datePublished\">2015<\/span>), p. <span itemprop=\"pagination\">190-194<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_207429611\"><span itemprop=\"issn\">ISSN: 1880-0688<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.2961\/jlmn.2015.02.0016' target='blank' itemprop=\"sameAs\">10.2961\/jlmn.2015.02.0016<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/Book\"><span class=\"author\" itemprop=\"author\">Banzhaf C.<\/span>, <span class=\"author\" itemprop=\"author\">Grieb M.<\/span>, <span class=\"author\" itemprop=\"author\">Rambach M.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/109558504?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Impact of post-trench processing on the electrical characteristics of 4H-SiC trench-MOS structures with thick top and bottom oxides<\/a><\/strong><\/span><br \/><span itemprop=\"publisher\" itemscope itemtype=\"http:\/\/schema.org\/Organization\"><span itemprop=\"name\">Trans Tech Publications Ltd<\/span><\/span>, <span itemprop=\"datePublished\">2015<\/span><br \/><span itemprop=\"isbn\">ISBN: 9783038354789<\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4028\/www.scientific.net\/MSF.821-823.753' target='blank' itemprop=\"sameAs\">10.4028\/www.scientific.net\/MSF.821-823.753<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Dudek D.<\/span>, <span class=\"author\" itemprop=\"author\">Fettweis G.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Kissinger D.<\/span>, <span class=\"author\" itemprop=\"author\">Kutter C.<\/span>, <span class=\"author\" itemprop=\"author\">Mathis W.<\/span>, <span class=\"author\" itemprop=\"author\">Lugli P.<\/span>, <span class=\"author\" itemprop=\"author\">Russer P.<\/span>, <span class=\"author\" itemprop=\"author\">Weigel R.<\/span>, <span class=\"author\" itemprop=\"author\">Wolff I.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/108077024?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Hidden Electronics<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"name\"><strong>Positionspapier des VDE<\/strong><\/span>, <span itemprop=\"datePublished\">2015<\/span>, p. <span itemprop=\"pagination\">1-24<\/span><\/span><br \/>URL: <a href='https:\/\/www.vde.com\/de\/fg\/gmm\/news\/documents\/vde_pp_hidden\\%20electronics_rz_web.pdf' target='blank' itemprop=\"url\">https:\/\/www.vde.com\/de\/fg\/gmm\/news\/documents\/vde_pp_hidden\\%20electronics_rz_web.pdf<\/a><br \/>(Working Paper)<\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Eckardt B.<\/span>, <span class=\"author\" itemprop=\"author\">Heckel T.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/110167244?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">High Power Density Automotive Converters using SiC or GaN Power Devices<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">Automotive Power Electronics International Conference (APE)<\/span><span itemprop=\"startDate\" content=\"2015\"><\/span><\/span><br \/>URL: <a href='http:\/\/www.sia.fr\/publications\/157-high-power-density-automotive-converters-using-sic-or-gan-power-devices' target='blank' itemprop=\"url\">http:\/\/www.sia.fr\/publications\/157-high-power-density-automotive-converters-using-sic-or-gan-power-devices<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>, <span class=\"author\" itemprop=\"author\">Schwarzmann H.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer AJ.<\/span>, <span class=\"author\" itemprop=\"author\">Doehler GH.<\/span>, <span class=\"author\" itemprop=\"author\">Schreivogel M.<\/span>, <span class=\"author\" itemprop=\"author\">Lutz T.<\/span>, <span class=\"author\" itemprop=\"author\">Guillen FH.<\/span>, <span class=\"author\" itemprop=\"author\">Graf J.<\/span>, <span class=\"author\" itemprop=\"author\">Fix R.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/120005424?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Modeling of ion drift in 4H-SiC-based chemical MOSFET sensors<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_120005424\"><span itemprop=\"name\"><strong>Journal of Vacuum Science & Technology B<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_120005424\" \/><span itemprop=\"volumeNumber\">33<\/span><\/span>  (<span itemprop=\"datePublished\">2015<\/span>)<br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_120005424\"><span itemprop=\"issn\">ISSN: 1071-1023<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1116\/1.4903054' target='blank' itemprop=\"sameAs\">10.1116\/1.4903054<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Osvet A.<\/span>, <span class=\"author\" itemprop=\"author\">Zhou X.<\/span>, <span class=\"author\" itemprop=\"author\">Haeublein V.<\/span>, <span class=\"author\" itemprop=\"author\">Schmuki P.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Spiecker E.<\/span>, <span class=\"author\" itemprop=\"author\">Mackovic M.<\/span>, <span class=\"author\" itemprop=\"author\">Liu N.<\/span>, <span class=\"author\" itemprop=\"author\">Hartmann M.<\/span>, <span class=\"author\" itemprop=\"author\">Nakajima T.<\/span>, <span class=\"author\" itemprop=\"author\">Venkatesan UM.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/112788984?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">\"Black\" TiO2 Nanotubes Formed by High-Energy Proton Implantation Show Noble-Metal-co-Catalyst Free Photocatalytic H2-Evolution<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_112788984\"><span itemprop=\"name\"><strong>Nano Letters<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_112788984\" \/><span itemprop=\"volumeNumber\">15<\/span><\/span>  (<span itemprop=\"datePublished\">2015<\/span>), p. <span itemprop=\"pagination\">6815-6820<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_112788984\"><span itemprop=\"issn\">ISSN: 1530-6984<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1021\/acs.nanolett.5b02663' target='blank' itemprop=\"sameAs\">10.1021\/acs.nanolett.5b02663<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">F\u00fcgl M.<\/span>, <span class=\"author\" itemprop=\"author\">Mackh G.<\/span>, <span class=\"author\" itemprop=\"author\">Meissner E.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/109556084?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Assessment of dicing induced damage and residual stress on the mechanical and electrical behavior of chips<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">2015 65th IEEE Electronic Components and Technology Conference, ECTC 2015<\/span><span itemprop=\"startDate\" content=\"2015\"><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/ECTC.2015.7159594' target='blank' itemprop=\"sameAs\">10.1109\/ECTC.2015.7159594<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Girschikofsky MG.<\/span>, <span class=\"author\" itemprop=\"author\">F\u00f6rthner M.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Hellmann R.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/121895004?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Bragg gratings in imprinted Ormocer\u00ae waveguides<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">24th International Conference on Plastic Optical Fibers, POF 2015<\/span><span itemprop=\"startDate\" content=\"2015\"><\/span><\/span><br \/>URL: <a href='https:\/\/www.scopus.com\/inward\/record.uri?partnerID=HzOxMe3b&amp;scp=84964659470&amp;origin=inward' target='blank' itemprop=\"url\">https:\/\/www.scopus.com\/inward\/record.uri?partnerID=HzOxMe3b&amp;scp=84964659470&amp;origin=inward<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Grosch J.<\/span>, <span class=\"author\" itemprop=\"author\">Teuber E.<\/span>, <span class=\"author\" itemprop=\"author\">Jank M.<\/span>, <span class=\"author\" itemprop=\"author\">Lorentz V.<\/span>, <span class=\"author\" itemprop=\"author\">M\u00e4rz M.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/201402584?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Device optimization and application study of low cost printed temperature sensor for mobile and stationary battery based Energy Storage Systems<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">International Conference on Smart Energy Grid Engineering, SEGE 2015<\/span><span itemprop=\"startDate\" content=\"2015\"><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/SEGE.2015.7324599' target='blank' itemprop=\"sameAs\">10.1109\/SEGE.2015.7324599<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Gruenler S.<\/span>, <span class=\"author\" itemprop=\"author\">Rattmann G.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer AJ.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/201402892?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">High-voltage monolithic 3D capacitors based on through-silicon-via technology<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference, IITC\/MAM 2015<\/span><span itemprop=\"startDate\" content=\"2015\"><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/IITC-MAM.2015.7325655' target='blank' itemprop=\"sameAs\">10.1109\/IITC-MAM.2015.7325655<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/Book\"><span class=\"author\" itemprop=\"author\">Heckel T.<\/span>, <span class=\"author\" itemprop=\"author\">Eckhardt B.<\/span>, <span class=\"author\" itemprop=\"author\">M\u00e4rz M.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Heckel T.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/121275704?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">SiC MOSFETs in hard-switching bidirectional DC\/DC converters<\/a><\/strong><\/span><br \/><span itemprop=\"publisher\" itemscope itemtype=\"http:\/\/schema.org\/Organization\"><span itemprop=\"name\">Trans Tech Publications Ltd<\/span><\/span>, <span itemprop=\"datePublished\">2015<\/span><br \/><span itemprop=\"isbn\">ISBN: 9783038354789<\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4028\/www.scientific.net\/MSF.821-823.689' target='blank' itemprop=\"sameAs\">10.4028\/www.scientific.net\/MSF.821-823.689<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Heckel T.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/122789744?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">A Novel Charge Based SPICE Model for Nonlinear Device Capacitances<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">3rd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2015<\/span><span itemprop=\"startDate\" content=\"2015\"><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/WiPDA.2015.7369263' target='blank' itemprop=\"sameAs\">10.1109\/WiPDA.2015.7369263<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Hofmann M.<\/span>, <span class=\"author\" itemprop=\"author\">Eckardt B.<\/span>, <span class=\"author\" itemprop=\"author\">Heckel T.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/110268884?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Inverter Technology for High-Speed Drives Like Electric Turbochargers<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">10th ETG\/GMM-Symposium on Innovative Small Drives and Micro-Motor Systems (IKMT)<\/span><span itemprop=\"startDate\" content=\"2015\"><\/span><\/span><\/li><li itemscope itemtype=\"http:\/\/schema.org\/Book\"><span class=\"author\" itemprop=\"author\">H\u00fcrner A.<\/span>, <span class=\"author\" itemprop=\"author\">Di Benedetto L.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>, <span class=\"author\" itemprop=\"author\">Mitlehner H.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/124079384?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Robust double-ring junction termination extension design for high voltage power semiconductor devices based on 4H-SiC<\/a><\/strong><\/span><br \/><span itemprop=\"publisher\" itemscope itemtype=\"http:\/\/schema.org\/Organization\"><span itemprop=\"name\">Trans Tech Publications Ltd<\/span><\/span>, <span itemprop=\"datePublished\">2015<\/span><br \/><span itemprop=\"isbn\">ISBN: 9783038354789<\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4028\/www.scientific.net\/MSF.821-823.656' target='blank' itemprop=\"sameAs\">10.4028\/www.scientific.net\/MSF.821-823.656<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/Book\"><span class=\"author\" itemprop=\"author\">H\u00fcrner A.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>, <span class=\"author\" itemprop=\"author\">Mitlehner H.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/123558644?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Temperature dependent characterization of bipolar injection field- effect-transistors (BiFET) for determining the short-circuit-capability<\/a><\/strong><\/span><br \/><span itemprop=\"publisher\" itemscope itemtype=\"http:\/\/schema.org\/Organization\"><span itemprop=\"name\">Trans Tech Publications Ltd<\/span><\/span>, <span itemprop=\"datePublished\">2015<\/span><br \/><span itemprop=\"isbn\">ISBN: 9783038354789<\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4028\/www.scientific.net\/MSF.821-823.806' target='blank' itemprop=\"sameAs\">10.4028\/www.scientific.net\/MSF.821-823.806<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Jelinek M.<\/span>, <span class=\"author\" itemprop=\"author\">Laven JG.<\/span>, <span class=\"author\" itemprop=\"author\">Kirnstoetter S.<\/span>, <span class=\"author\" itemprop=\"author\">Schustereder W.<\/span>, <span class=\"author\" itemprop=\"author\">Schulze H-.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/120882344?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">A DLTS study of hydrogen doped czochralski-grown silicon<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_120882344\"><span itemprop=\"name\"><strong>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_120882344\" \/><span itemprop=\"volumeNumber\">365<\/span><\/span>  (<span itemprop=\"datePublished\">2015<\/span>), p. <span itemprop=\"pagination\">240-243<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_120882344\"><span itemprop=\"issn\">ISSN: 0168-583X<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.nimb.2015.07.078' target='blank' itemprop=\"sameAs\">10.1016\/j.nimb.2015.07.078<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Kaliya Perumal Veerapandian S.<\/span>, <span class=\"author\" itemprop=\"author\">Beuer S.<\/span>, <span class=\"author\" itemprop=\"author\">Rumler M.<\/span>, <span class=\"author\" itemprop=\"author\">Stumpf F.<\/span>, <span class=\"author\" itemprop=\"author\">Thomas K.<\/span>, <span class=\"author\" itemprop=\"author\">Pillatsch L.<\/span>, <span class=\"author\" itemprop=\"author\">Michler J.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/114467804?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Comparison of silicon and 4H silicon carbide patterning using focused ion beams<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_114467804\"><span itemprop=\"name\"><strong>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_114467804\" \/><span itemprop=\"volumeNumber\">365<\/span><\/span>  (<span itemprop=\"datePublished\">2015<\/span>), p. <span itemprop=\"pagination\">44-49<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_114467804\"><span itemprop=\"issn\">ISSN: 0168-583X<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.nimb.2015.07.079' target='blank' itemprop=\"sameAs\">10.1016\/j.nimb.2015.07.079<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Krach F.<\/span>, <span class=\"author\" itemprop=\"author\">Schwarzmann H.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/121901164?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Silicon nitride, a high potential dielectric for 600 v integrated RC-snubber applications<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_121901164\"><span itemprop=\"name\"><strong>Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_121901164\" \/><span itemprop=\"volumeNumber\">33<\/span><\/span>  (<span itemprop=\"datePublished\">2015<\/span>), Article No.: <span itemprop=\"pagination\">01A112<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_121901164\"><span itemprop=\"issn\">ISSN: 2166-2754<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1116\/1.4906082' target='blank' itemprop=\"sameAs\">10.1116\/1.4906082<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/Book\"><span class=\"author\" itemprop=\"author\">Noll S.<\/span>, <span class=\"author\" itemprop=\"author\">Rambach M.<\/span>, <span class=\"author\" itemprop=\"author\">Grieb M.<\/span>, <span class=\"author\" itemprop=\"author\">Scholten D.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/121264484?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Influence of annealing, oxidation and doping on conduction-band near interface traps in 4H-SiC characterized by low temperature conductance measurements<\/a><\/strong><\/span><br \/><span itemprop=\"publisher\" itemscope itemtype=\"http:\/\/schema.org\/Organization\"><span itemprop=\"name\">Trans Tech Publications Ltd<\/span><\/span>, <span itemprop=\"datePublished\">2015<\/span><br \/><span itemprop=\"isbn\">ISBN: 9783038354789<\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4028\/www.scientific.net\/MSF.821-823.476' target='blank' itemprop=\"sameAs\">10.4028\/www.scientific.net\/MSF.821-823.476<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Paskaleva A.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Hutzler A.<\/span>, <span class=\"author\" itemprop=\"author\">Spassov D.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/121441144?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Tailoring the Electrical Properties of HfO2 MOS-Devices by Aluminum Doping<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_121441144\"><span itemprop=\"name\"><strong>ACS Applied Materials and Interfaces<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_121441144\" \/><span itemprop=\"volumeNumber\">7<\/span><\/span>  (<span itemprop=\"datePublished\">2015<\/span>), p. <span itemprop=\"pagination\">17032 - 17043<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_121441144\"><span itemprop=\"issn\">ISSN: 1944-8244<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1021\/acsami.5b03071' target='blank' itemprop=\"sameAs\">10.1021\/acsami.5b03071<\/a><br \/>URL: <a href='http:\/\/pubs.acs.org\/doi\/abs\/10.1021\/acsami.5b03071' target='blank' itemprop=\"url\">http:\/\/pubs.acs.org\/doi\/abs\/10.1021\/acsami.5b03071<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Paskaleva A.<\/span>, <span class=\"author\" itemprop=\"author\">Weinreich W.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Lemberger M.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/107150164?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Improved electrical behavior of ZrO2-based MIM structures by optimizing the O3 oxidation pulse time<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_107150164\"><span itemprop=\"name\"><strong>Materials Science in Semiconductor Processing<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_107150164\" \/><span itemprop=\"volumeNumber\">29<\/span><\/span>  (<span itemprop=\"datePublished\">2015<\/span>), p. <span itemprop=\"pagination\">124-131<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_107150164\"><span itemprop=\"issn\">ISSN: 1369-8001<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.mssp.2013.12.030' target='blank' itemprop=\"sameAs\">10.1016\/j.mssp.2013.12.030<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Peukert W.<\/span>, <span class=\"author\" itemprop=\"author\">Meric Z.<\/span>, <span class=\"author\" itemprop=\"author\">Mehringer C.<\/span>, <span class=\"author\" itemprop=\"author\">Jank M.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Karpstein N.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/122375484?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Tunable conduction type of solution-processed germanium nanoparticle based field effect transistors and their inverter integration<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_122375484\"><span itemprop=\"name\"><strong>Physical Chemistry Chemical Physics<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_122375484\" \/><span itemprop=\"volumeNumber\">17<\/span><\/span>  (<span itemprop=\"datePublished\">2015<\/span>), p. <span itemprop=\"pagination\">22106-22114<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_122375484\"><span itemprop=\"issn\">ISSN: 1463-9076<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1039\/c5cp03321g' target='blank' itemprop=\"sameAs\">10.1039\/c5cp03321g<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Rouag, N.<\/span>, <span class=\"author\" itemprop=\"author\">Ouennoughi Z.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Murakami K.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/109556524?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Current conduction mechanism of MIS devices using multidimensional minimization system program<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_109556524\"><span itemprop=\"name\"><strong>Microelectronics Reliability<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_109556524\" \/><span itemprop=\"volumeNumber\">55<\/span><\/span>  (<span itemprop=\"datePublished\">2015<\/span>), p. <span itemprop=\"pagination\">1028-1034<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_109556524\"><span itemprop=\"issn\">ISSN: 0026-2714<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.microrel.2015.05.001' target='blank' itemprop=\"sameAs\">10.1016\/j.microrel.2015.05.001<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Salinaro A.<\/span>, <span class=\"author\" itemprop=\"author\">Pobegen G.<\/span>, <span class=\"author\" itemprop=\"author\">Aichinger T.<\/span>, <span class=\"author\" itemprop=\"author\">Zippelius B.<\/span>, <span class=\"author\" itemprop=\"author\">Peters DP.<\/span>, <span class=\"author\" itemprop=\"author\">Friedrichs P.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/121897864?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Charge pumping measurements on differently passivated lateral 4H-SiC MOSFETs<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_121897864\"><span itemprop=\"name\"><strong>IEEE Transactions on Electron Devices<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_121897864\" \/><span itemprop=\"volumeNumber\">62<\/span><\/span>  (<span itemprop=\"datePublished\">2015<\/span>), p. <span itemprop=\"pagination\">155-163<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_121897864\"><span itemprop=\"issn\">ISSN: 0018-9383<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/TED.2014.2372874' target='blank' itemprop=\"sameAs\">10.1109\/TED.2014.2372874<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Stadler A.<\/span>, <span class=\"author\" itemprop=\"author\">Stolzke T.<\/span>, <span class=\"author\" itemprop=\"author\">Gulden C.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/123677444?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Design and simulation of thermally optimized filter inductors for a 1mw windmill demonstrator<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">2015 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2015<\/span><span itemprop=\"startDate\" content=\"2015\"><\/span><\/span><br \/>URL: <a href='https:\/\/www.scopus.com\/inward\/record.uri?partnerID=HzOxMe3b&scp=84997418748\u2228igin=inward' target='blank' itemprop=\"url\">https:\/\/www.scopus.com\/inward\/record.uri?partnerID=HzOxMe3b&scp=84997418748\u2228igin=inward<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Stadler A.<\/span>, <span class=\"author\" itemprop=\"author\">Stolzke T.<\/span>, <span class=\"author\" itemprop=\"author\">Gulden C.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106255644?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Optimized filter inductors for a 1MW windmill demonstrator with an objective to reduced converter size<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">17th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2015<\/span><span itemprop=\"startDate\" content=\"2015\"><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/EPE.2015.7309130' target='blank' itemprop=\"sameAs\">10.1109\/EPE.2015.7309130<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Stolzke T.<\/span>, <span class=\"author\" itemprop=\"author\">Stadler A.<\/span>, <span class=\"author\" itemprop=\"author\">Gulden C.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/118163144?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Calculating phase currents for high frequency three phase inductors via the inductance matrix<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">2015 International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2015<\/span><span itemprop=\"startDate\" content=\"2015\"><\/span><\/span><br \/>URL: <a href='https:\/\/www.scopus.com\/inward\/record.uri?partnerID=HzOxMe3b&amp;scp=84997417432&amp;origin=inward' target='blank' itemprop=\"url\">https:\/\/www.scopus.com\/inward\/record.uri?partnerID=HzOxMe3b&amp;scp=84997417432&amp;origin=inward<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Szwarc R.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Weber H.<\/span>, <span class=\"author\" itemprop=\"author\">Moder I.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer AJ.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/201404166?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Modelling of the electrochemical etch stop with high reverse bias across pn-junctions<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">26th Annual SEMI Advanced Semiconductor Manufacturing Conference, ASMC 2015<\/span><span itemprop=\"startDate\" content=\"2015\"><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/ASMC.2015.7164437' target='blank' itemprop=\"sameAs\">10.1109\/ASMC.2015.7164437<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Wegener CM.<\/span>, <span class=\"author\" itemprop=\"author\">Spiehl D.<\/span>, <span class=\"author\" itemprop=\"author\">Mikschl F.<\/span>, <span class=\"author\" itemprop=\"author\">Liu X.<\/span>, <span class=\"author\" itemprop=\"author\">Roosen A.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/117992204?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Printing of Ultrathin Nanoparticulate Indium Tin Oxide Structures<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">International Conference and Exhibition on Ceramic Interconnect and Ceramic Microsystems Technologies (CICMT)<\/span><span itemprop=\"startDate\" content=\"2015\"><\/span><\/span><\/li><\/ul><h3>2014<\/h3><ul class=\"cris-publications \" lang=\"en\"><li itemscope itemtype=\"http:\/\/schema.org\/Book\"><span class=\"author\" itemprop=\"author\">Banzhaf C.<\/span>, <span class=\"author\" itemprop=\"author\">Grieb M.<\/span>, <span class=\"author\" itemprop=\"author\">Trautmann A.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/109998064?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Influence of diverse post-trench processes on the electrical performance of 4H-SiC MOS structures<\/a><\/strong><\/span><br \/><span itemprop=\"publisher\" itemscope itemtype=\"http:\/\/schema.org\/Organization\"><span itemprop=\"name\">Trans Tech Publications Ltd<\/span><\/span>, <span itemprop=\"datePublished\">2014<\/span><br \/><span itemprop=\"isbn\">ISBN: 9783038350101<\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4028\/www.scientific.net\/MSF.778-780.595' target='blank' itemprop=\"sameAs\">10.4028\/www.scientific.net\/MSF.778-780.595<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/Book\"><span class=\"author\" itemprop=\"author\">Banzhaf C.<\/span>, <span class=\"author\" itemprop=\"author\">Grieb M.<\/span>, <span class=\"author\" itemprop=\"author\">Trautmann A.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106789804?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Investigation of trenched and high temperature annealed 4H-SiC<\/a><\/strong><\/span><br \/><span itemprop=\"publisher\" itemscope itemtype=\"http:\/\/schema.org\/Organization\"><span itemprop=\"name\">Trans Tech Publications Ltd<\/span><\/span>, <span itemprop=\"datePublished\">2014<\/span><br \/><span itemprop=\"isbn\">ISBN: 9783038350101<\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4028\/www.scientific.net\/MSF.778-780.742' target='blank' itemprop=\"sameAs\">10.4028\/www.scientific.net\/MSF.778-780.742<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>, <span class=\"author\" itemprop=\"author\">Schwarzmann H.<\/span>, <span class=\"author\" itemprop=\"author\">Krach F.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer AJ.<\/span>, <span class=\"author\" itemprop=\"author\">Berberich SE.<\/span>, <span class=\"author\" itemprop=\"author\">Kasko I.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/201407887?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Reliability of monolithic RC-snubbers in MOS-based power modules<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">5th Electronics System-Integration Technology Conference, ESTC 2014<\/span><span itemprop=\"startDate\" content=\"2014\"><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/ESTC.2014.6962794' target='blank' itemprop=\"sameAs\">10.1109\/ESTC.2014.6962794<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Erlekampf J.<\/span>, <span class=\"author\" itemprop=\"author\">Seebeck J.<\/span>, <span class=\"author\" itemprop=\"author\">Savva P.<\/span>, <span class=\"author\" itemprop=\"author\">Meissner E.<\/span>, <span class=\"author\" itemprop=\"author\">Friedrich J.<\/span>, <span class=\"author\" itemprop=\"author\">Alt N.<\/span>, <span class=\"author\" itemprop=\"author\">Schl\u00fccker E.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/121400884?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Numerical time-dependent 3D simulation of flow pattern and heat distribution in an ammonothermal system with various baffle shapes<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_121400884\"><span itemprop=\"name\"><strong>Journal of Crystal Growth<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_121400884\" \/><span itemprop=\"volumeNumber\">403<\/span><\/span>  (<span itemprop=\"datePublished\">2014<\/span>), p. <span itemprop=\"pagination\">96-104<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_121400884\"><span itemprop=\"issn\">ISSN: 0022-0248<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.jcrysgro.2014.06.007' target='blank' itemprop=\"sameAs\">10.1016\/j.jcrysgro.2014.06.007<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Niedermeier MT.<\/span>, <span class=\"author\" itemprop=\"author\">Wenger MM.<\/span>, <span class=\"author\" itemprop=\"author\">Filimon R.<\/span>, <span class=\"author\" itemprop=\"author\">Sedlacek V.<\/span>, <span class=\"author\" itemprop=\"author\">Lorentz VR.<\/span>, <span class=\"author\" itemprop=\"author\">Fort C.<\/span>, <span class=\"author\" itemprop=\"author\">M\u00e4rz M.<\/span>, <span class=\"author\" itemprop=\"author\">Ferrieux JP.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/201405987?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Galvanically isolated differential data transmission using capacitive coupling and a modified Manchester algorithm for smart power converters<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">2014 IEEE 23rd International Symposium on Industrial Electronics, ISIE 2014<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Istanbul<\/span><\/span><span itemprop=\"startDate\" content=\"2014\"><\/span>)<\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/ISIE.2014.6865029' target='blank' itemprop=\"sameAs\">10.1109\/ISIE.2014.6865029<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Trapnauskas J.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer AJ.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106791564?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Thickness mapping of high-\u03ba dielectrics at the nanoscale<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106791564\"><span itemprop=\"name\"><strong>Applied Physics Letters<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_106791564\" \/><span itemprop=\"volumeNumber\">104<\/span><\/span>  (<span itemprop=\"datePublished\">2014<\/span>), Article No.: <span itemprop=\"pagination\">052907<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106791564\"><span itemprop=\"issn\">ISSN: 0003-6951<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1063\/1.4863947' target='blank' itemprop=\"sameAs\">10.1063\/1.4863947<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">F\u00fcgl M.<\/span>, <span class=\"author\" itemprop=\"author\">Mackh G.<\/span>, <span class=\"author\" itemprop=\"author\">Meissner E.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/121394284?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Analytical stress characterization after different chip separation methods<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_121394284\"><span itemprop=\"name\"><strong>Microelectronics Reliability<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_121394284\" \/><span itemprop=\"volumeNumber\">54<\/span><\/span>  (<span itemprop=\"datePublished\">2014<\/span>), p. <span itemprop=\"pagination\">1735-1740<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_121394284\"><span itemprop=\"issn\">ISSN: 0026-2714<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.microrel.2014.07.086' target='blank' itemprop=\"sameAs\">10.1016\/j.microrel.2014.07.086<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Haublein V.<\/span>, <span class=\"author\" itemprop=\"author\">Birnbaum E.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Grimm W.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/201406999?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Modification of polypropylene films for thin film capacitors by ion implantation<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">20th International Conference on Ion Implantation Technology, IIT 2014<\/span><span itemprop=\"startDate\" content=\"2014\"><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/IIT.2014.6939968' target='blank' itemprop=\"sameAs\">10.1109\/IIT.2014.6939968<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Heckel T.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Zeltner S.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/109127304?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Characterization and Application of 600 V Normally-Off GaN Transistors in Hard Switching DC\/DC Converters<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">26th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2014<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Waikoloa, HI<\/span><\/span><span itemprop=\"startDate\" content=\"2014\"><\/span>)<\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/ISPSD.2014.6855976' target='blank' itemprop=\"sameAs\">10.1109\/ISPSD.2014.6855976<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Hilden T.<\/span>, <span class=\"author\" itemprop=\"author\">J\u00e4nker P.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/201405132?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Comparison of Si\/SiC semiconductor performance using experiment-based simulation<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2014<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Nuremberg<\/span><\/span><span itemprop=\"startDate\" content=\"2014\"><\/span>)<\/span><br \/>URL: <a href='https:\/\/www.scopus.com\/record\/display.uri?eid=2-s2.0-84906535889\u2228igin=inward' target='blank' itemprop=\"url\">https:\/\/www.scopus.com\/record\/display.uri?eid=2-s2.0-84906535889\u2228igin=inward<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/Book\"><span class=\"author\" itemprop=\"author\">H\u00fcrner A.<\/span>, <span class=\"author\" itemprop=\"author\">Bonse C.<\/span>, <span class=\"author\" itemprop=\"author\">Clemmer G.<\/span>, <span class=\"author\" itemprop=\"author\">Kallinger B.<\/span>, <span class=\"author\" itemprop=\"author\">Heckel T.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>, <span class=\"author\" itemprop=\"author\">Mitlehner H.<\/span>, <span class=\"author\" itemprop=\"author\">H\u00e4ublein V.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Heckel T.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/109141384?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Temperature and electrical field dependence of the ambipolar mobility in n-doped 4H-SiC<\/a><\/strong><\/span><br \/><span itemprop=\"publisher\" itemscope itemtype=\"http:\/\/schema.org\/Organization\"><span itemprop=\"name\">Trans Tech Publications Ltd<\/span><\/span>, <span itemprop=\"datePublished\">2014<\/span><br \/><span itemprop=\"isbn\">ISBN: 9783038350101<\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4028\/www.scientific.net\/MSF.778-780.487' target='blank' itemprop=\"sameAs\">10.4028\/www.scientific.net\/MSF.778-780.487<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">H\u00fcrner A.<\/span>, <span class=\"author\" itemprop=\"author\">Mitlehner H.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/123582844?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Experimental analysis of bipolar SiC-devices for future energy distribution systems<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">2014 16th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2014<\/span><span itemprop=\"startDate\" content=\"2014\"><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/EPE.2014.6910847' target='blank' itemprop=\"sameAs\">10.1109\/EPE.2014.6910847<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Jelinek M.<\/span>, <span class=\"author\" itemprop=\"author\">Laven JG.<\/span>, <span class=\"author\" itemprop=\"author\">Job R.<\/span>, <span class=\"author\" itemprop=\"author\">Schustereder W.<\/span>, <span class=\"author\" itemprop=\"author\">Schulze HJ.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/201407619?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">New method to increase the doping efficiency of proton implantation in a high-dose regime<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">13th High Purity and High Mobility Semiconductor Symposium - 2014 ECS and SMEQ Joint International Meeting<\/span><span itemprop=\"startDate\" content=\"2014\"><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1149\/06411.0199ecst' target='blank' itemprop=\"sameAs\">10.1149\/06411.0199ecst<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Jelinek M.<\/span>, <span class=\"author\" itemprop=\"author\">Laven JG.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Schustereder W.<\/span>, <span class=\"author\" itemprop=\"author\">Schulze HJ.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Job R.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/201405400?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Deep-level defects in high-dose proton implanted and high-temperature annealed silicon<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">13th High Purity and High Mobility Semiconductor Symposium - 2014 ECS and SMEQ Joint International Meeting<\/span><span itemprop=\"startDate\" content=\"2014\"><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1149\/06411.0173ecst' target='blank' itemprop=\"sameAs\">10.1149\/06411.0173ecst<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Jelinek M.<\/span>, <span class=\"author\" itemprop=\"author\">Schustereder W.<\/span>, <span class=\"author\" itemprop=\"author\">Laven JG.<\/span>, <span class=\"author\" itemprop=\"author\">Schulze HJ.<\/span>, <span class=\"author\" itemprop=\"author\">Kirnstoetter S.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/201406707?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">MeV-proton channeling in crystalline silicon<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">20th International Conference on Ion Implantation Technology, IIT 2014<\/span><span itemprop=\"startDate\" content=\"2014\"><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/IIT.2014.6940059' target='blank' itemprop=\"sameAs\">10.1109\/IIT.2014.6940059<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Kilian D.<\/span>, <span class=\"author\" itemprop=\"author\">Polster S.<\/span>, <span class=\"author\" itemprop=\"author\">Vogeler I.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Jank M.<\/span>, <span class=\"author\" itemprop=\"author\">Peukert W.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/113983364?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Pulsed direct flame deposition and thermal annealing of transparent amorphous indium zinc oxide films as active layers in field effect transistors<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_113983364\"><span itemprop=\"name\"><strong>ACS Applied Materials and Interfaces<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_113983364\" \/><span itemprop=\"volumeNumber\">6<\/span><\/span>  (<span itemprop=\"datePublished\">2014<\/span>), p. <span itemprop=\"pagination\">12245-12251<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_113983364\"><span itemprop=\"issn\">ISSN: 1944-8244<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1021\/am501837u' target='blank' itemprop=\"sameAs\">10.1021\/am501837u<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Koller TM.<\/span>, <span class=\"author\" itemprop=\"author\">Schmid S.<\/span>, <span class=\"author\" itemprop=\"author\">Sachnov S.<\/span>, <span class=\"author\" itemprop=\"author\">Rausch MH.<\/span>, <span class=\"author\" itemprop=\"author\">Wasserscheid P.<\/span>, <span class=\"author\" itemprop=\"author\">Fr\u00f6ba AP.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/122380764?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Measurement and Prediction of the Thermal Conductivity of Tricyanomethanide- and Tetracyanoborate-Based Imidazolium Ionic Liquids<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_122380764\"><span itemprop=\"name\"><strong>International Journal of Thermophysics<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_122380764\" \/><span itemprop=\"volumeNumber\">35<\/span><\/span>  (<span itemprop=\"datePublished\">2014<\/span>), p. <span itemprop=\"pagination\">195-217<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_122380764\"><span itemprop=\"issn\">ISSN: 0195-928X<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1007\/s10765-014-1617-1' target='blank' itemprop=\"sameAs\">10.1007\/s10765-014-1617-1<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Landwehr J.<\/span>, <span class=\"author\" itemprop=\"author\">Fader R.<\/span>, <span class=\"author\" itemprop=\"author\">Rumler M.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Simon B.<\/span>, <span class=\"author\" itemprop=\"author\">Fodor B.<\/span>, <span class=\"author\" itemprop=\"author\">Petrik P.<\/span>, <span class=\"author\" itemprop=\"author\">Schiener A.<\/span>, <span class=\"author\" itemprop=\"author\">Winter B.<\/span>, <span class=\"author\" itemprop=\"author\">Spiecker E.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/115278724?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Optical polymers with tunable refractive index for nanoimprint technologies<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_115278724\"><span itemprop=\"name\"><strong>Nanotechnology<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_115278724\" \/><span itemprop=\"volumeNumber\">25<\/span><\/span>  (<span itemprop=\"datePublished\">2014<\/span>), p. <span itemprop=\"pagination\">Article number 505301<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_115278724\"><span itemprop=\"issn\">ISSN: 1361-6528<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1088\/0957-4484\/25\/50\/505301' target='blank' itemprop=\"sameAs\">10.1088\/0957-4484\/25\/50\/505301<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Laven JG.<\/span>, <span class=\"author\" itemprop=\"author\">Jelinek M.<\/span>, <span class=\"author\" itemprop=\"author\">Job R.<\/span>, <span class=\"author\" itemprop=\"author\">Schustereder W.<\/span>, <span class=\"author\" itemprop=\"author\">Schulze H-.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106788924?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">DLTS characterization of proton-implanted silicon under varying annealing conditions<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106788924\"><span itemprop=\"name\"><strong>Physica Status Solidi<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_106788924\" \/><span itemprop=\"volumeNumber\">251<\/span><\/span>  (<span itemprop=\"datePublished\">2014<\/span>), p. <span itemprop=\"pagination\">2189-2192<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106788924\"><span itemprop=\"issn\">ISSN: 0031-8957<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1002\/pssb.201400028' target='blank' itemprop=\"sameAs\">10.1002\/pssb.201400028<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Murakami K.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Hudec B.<\/span>, <span class=\"author\" itemprop=\"author\">Rosova A.<\/span>, <span class=\"author\" itemprop=\"author\">Husekova K.<\/span>, <span class=\"author\" itemprop=\"author\">Dobrocka E.<\/span>, <span class=\"author\" itemprop=\"author\">Rammula R.<\/span>, <span class=\"author\" itemprop=\"author\">Kasikov A.<\/span>, <span class=\"author\" itemprop=\"author\">Han JH.<\/span>, <span class=\"author\" itemprop=\"author\">Lee W.<\/span>, <span class=\"author\" itemprop=\"author\">Song SJ.<\/span>, <span class=\"author\" itemprop=\"author\">Paskaleva A.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer AJ.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Froehlich K.<\/span>, <span class=\"author\" itemprop=\"author\">Aarik J.<\/span>, <span class=\"author\" itemprop=\"author\">Hwang CS.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/120875744?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Nanoscale characterization of TiO2 films grown by atomic layer deposition on RuO2 electrodes<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_120875744\"><span itemprop=\"name\"><strong>ACS Applied Materials and Interfaces<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_120875744\" \/><span itemprop=\"volumeNumber\">6<\/span><\/span>  (<span itemprop=\"datePublished\">2014<\/span>), p. <span itemprop=\"pagination\">2486-2492<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_120875744\"><span itemprop=\"issn\">ISSN: 1944-8244<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1021\/am4049139' target='blank' itemprop=\"sameAs\">10.1021\/am4049139<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/Book\"><span class=\"author\" itemprop=\"author\">Noll S.<\/span>, <span class=\"author\" itemprop=\"author\">Rambach M.<\/span>, <span class=\"author\" itemprop=\"author\">Grieb M.<\/span>, <span class=\"author\" itemprop=\"author\">Scholten D.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/109254904?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Effect of shallow n-doping on field effect mobility in p-doped channels of 4H-SiC MOS field effect transistors<\/a><\/strong><\/span><br \/><span itemprop=\"publisher\" itemscope itemtype=\"http:\/\/schema.org\/Organization\"><span itemprop=\"name\">Trans Tech Publications Ltd<\/span><\/span>, <span itemprop=\"datePublished\">2014<\/span><br \/><span itemprop=\"isbn\">ISBN: 9783038350101<\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4028\/www.scientific.net\/MSF.778-780.702' target='blank' itemprop=\"sameAs\">10.4028\/www.scientific.net\/MSF.778-780.702<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Oertel S.<\/span>, <span class=\"author\" itemprop=\"author\">Jank M.<\/span>, <span class=\"author\" itemprop=\"author\">Teuber E.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/109138084?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">High-mobility metal-oxide thin-film transistors by spray deposition of environmentally friendly precursors<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_109138084\"><span itemprop=\"name\"><strong>Thin Solid Films<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_109138084\" \/><span itemprop=\"volumeNumber\">553<\/span><\/span>  (<span itemprop=\"datePublished\">2014<\/span>), p. <span itemprop=\"pagination\">114-117<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_109138084\"><span itemprop=\"issn\">ISSN: 0040-6090<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.tsf.2013.11.061' target='blank' itemprop=\"sameAs\">10.1016\/j.tsf.2013.11.061<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Scharin M.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Dirnecker T.<\/span>, <span class=\"author\" itemprop=\"author\">Marhenke J.<\/span>, <span class=\"author\" itemprop=\"author\">Herrmann B.<\/span>, <span class=\"author\" itemprop=\"author\">Rumler M.<\/span>, <span class=\"author\" itemprop=\"author\">Fader R.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Herrmann M.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/121087384?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Bioactivation of plane and patterned PDMS thin films by wettability engineering<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_121087384\"><span itemprop=\"name\"><strong>BioNanoScience<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_121087384\" \/><span itemprop=\"volumeNumber\">4<\/span><\/span>  (<span itemprop=\"datePublished\">2014<\/span>), p. <span itemprop=\"pagination\">251-262<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_121087384\"><span itemprop=\"issn\">ISSN: 2191-1630<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1007\/s12668-014-0145-6' target='blank' itemprop=\"sameAs\">10.1007\/s12668-014-0145-6<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Schimmel S.<\/span>, <span class=\"author\" itemprop=\"author\">K\u00fcnecke U.<\/span>, <span class=\"author\" itemprop=\"author\">Steigerwald T.<\/span>, <span class=\"author\" itemprop=\"author\">Hertweck B.<\/span>, <span class=\"author\" itemprop=\"author\">Alt N.<\/span>, <span class=\"author\" itemprop=\"author\">Schl\u00fccker E.<\/span>, <span class=\"author\" itemprop=\"author\">Wellmann P.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/281273255?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">In Situ Visualization of GaN Crystals in Ammonothermal High Pressure Autoclaves by X-ray Imaging<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">German Conference on Crystal Growth<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Halle<\/span><\/span>, <span itemprop=\"startDate\" content=\"2014-03-12\">12. March 2014<\/span> - <span itemprop=\"endDate\" content=\"2014-03-14\">14. March 2014<\/span>)<\/span><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Stadler A.<\/span>, <span class=\"author\" itemprop=\"author\">Huber R.<\/span>, <span class=\"author\" itemprop=\"author\">Stolzke T.<\/span>, <span class=\"author\" itemprop=\"author\">Gulden C.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106251464?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Analytical calculation of copper losses in litz-wire windings of gapped inductors<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106251464\"><span itemprop=\"name\"><strong>IEEE Transactions on Magnetics<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_106251464\" \/><span itemprop=\"volumeNumber\">50<\/span><\/span>  (<span itemprop=\"datePublished\">2014<\/span>), Article No.: <span itemprop=\"pagination\">6748958<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106251464\"><span itemprop=\"issn\">ISSN: 0018-9464<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/TMAG.2013.2282333' target='blank' itemprop=\"sameAs\">10.1109\/TMAG.2013.2282333<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Stadler A.<\/span>, <span class=\"author\" itemprop=\"author\">Stolzke T.<\/span>, <span class=\"author\" itemprop=\"author\">Gulden C.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106253004?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">A new generation of modular power inductors with minimum thermal resistance<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">2014 16th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2014<\/span><span itemprop=\"startDate\" content=\"2014\"><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/EPE.2014.6910771' target='blank' itemprop=\"sameAs\">10.1109\/EPE.2014.6910771<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Stadler A.<\/span>, <span class=\"author\" itemprop=\"author\">Stolzke T.<\/span>, <span class=\"author\" itemprop=\"author\">Gulden C.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106253224?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">High frequency high current filter inductors with minimum thermal resistance<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">16th International Power Electronics and Motion Control Conference and Exposition, PEMC 2014<\/span><span itemprop=\"startDate\" content=\"2014\"><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/EPEPEMC.2014.6980507' target='blank' itemprop=\"sameAs\">10.1109\/EPEPEMC.2014.6980507<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Strenger C.<\/span>, <span class=\"author\" itemprop=\"author\">Uhnevionak V.<\/span>, <span class=\"author\" itemprop=\"author\">Mortet V.<\/span>, <span class=\"author\" itemprop=\"author\">Ortiz G.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>, <span class=\"author\" itemprop=\"author\">Burenkov A.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Cristiano F.<\/span>, <span class=\"author\" itemprop=\"author\">Bedel-Pereira E.<\/span>, <span class=\"author\" itemprop=\"author\">Pichler P.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106790244?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Systematic analysis of the high-and low-field channel mobility in lateral 4H-SiC MOSFETs<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">15th International Conference on Silicon Carbide and Related Materials, ICSCRM 2013<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Miyazaki<\/span><\/span><span itemprop=\"startDate\" content=\"2014\"><\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"name\" style=\"font-weight:bold\">Silicon Carbide and Related Materials 2013<\/span> <span itemprop=\"datePublished\">2014<\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4028\/www.scientific.net\/MSF.778-780.583' target='blank' itemprop=\"sameAs\">10.4028\/www.scientific.net\/MSF.778-780.583<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Thesen MW.<\/span>, <span class=\"author\" itemprop=\"author\">Nees D.<\/span>, <span class=\"author\" itemprop=\"author\">Ruttloff S.<\/span>, <span class=\"author\" itemprop=\"author\">Rumler M.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Schlachter F.<\/span>, <span class=\"author\" itemprop=\"author\">Gr\u00fctzner S.<\/span>, <span class=\"author\" itemprop=\"author\">Vogler M.<\/span>, <span class=\"author\" itemprop=\"author\">Schleunitz A.<\/span>, <span class=\"author\" itemprop=\"author\">Gr\u00fctzner G.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106339684?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Inkjetable and photo-curable resists for large-area and high-throughput roll-to-roll nanoimprint lithography<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106339684\"><span itemprop=\"name\"><strong>Journal of Micro-Nanolithography MEMS and MOEMS<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_106339684\" \/><span itemprop=\"volumeNumber\">13<\/span><\/span>  (<span itemprop=\"datePublished\">2014<\/span>)<br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106339684\"><span itemprop=\"issn\">ISSN: 1932-5150<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1117\/1.JMM.13.4.043003' target='blank' itemprop=\"sameAs\">10.1117\/1.JMM.13.4.043003<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Thesen MW.<\/span>, <span class=\"author\" itemprop=\"author\">Rumler M.<\/span>, <span class=\"author\" itemprop=\"author\">Schlachter F.<\/span>, <span class=\"author\" itemprop=\"author\">Gr\u00fctzner S.<\/span>, <span class=\"author\" itemprop=\"author\">Moormann C.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Nees D.<\/span>, <span class=\"author\" itemprop=\"author\">Ruttloff S.<\/span>, <span class=\"author\" itemprop=\"author\">Pfirrmann S.<\/span>, <span class=\"author\" itemprop=\"author\">Vogler M.<\/span>, <span class=\"author\" itemprop=\"author\">Schleunitz A.<\/span>, <span class=\"author\" itemprop=\"author\">Gr\u00fctzner G.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106329784?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Enabling Large Area and High Throughput Roll-to-Roll NIL by Novel Inkjetable and Photo-curable NIL-Resists<\/a><\/strong><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1117\/12.2046279' target='blank' itemprop=\"sameAs\">10.1117\/12.2046279<\/a><\/li><\/ul><h3>2013<\/h3><ul class=\"cris-publications \" lang=\"en\"><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Adelmann B.<\/span>, <span class=\"author\" itemprop=\"author\">H\u00fcrner A.<\/span>, <span class=\"author\" itemprop=\"author\">Schlegel T.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Hellmann R.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/109369744?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Laser alloying nickel on 4H-silicon carbide substrate to generate ohmic contacts<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_109369744\"><span itemprop=\"name\"><strong>Journal of Laser Micro Nanoengineering<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_109369744\" \/><span itemprop=\"volumeNumber\">8<\/span><\/span>  (<span itemprop=\"datePublished\">2013<\/span>), p. <span itemprop=\"pagination\">97-101<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_109369744\"><span itemprop=\"issn\">ISSN: 1880-0688<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.2961\/jlmn.2013.01.0019' target='blank' itemprop=\"sameAs\">10.2961\/jlmn.2013.01.0019<\/a><br \/>(Zeitungsartikel)<\/li><li itemscope itemtype=\"http:\/\/schema.org\/Book\"><span class=\"author\" itemprop=\"author\">Banzhaf C.<\/span>, <span class=\"author\" itemprop=\"author\">Grieb M.<\/span>, <span class=\"author\" itemprop=\"author\">Trautmann A.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/121670824?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Characterization of diverse gate oxides on 4H-SiC 3D trench-MOS structures<\/a><\/strong><\/span><br \/><span itemprop=\"datePublished\">2013<\/span><br \/><span itemprop=\"isbn\">ISBN: 9783037856246<\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4028\/www.scientific.net\/MSF.740-742.691' target='blank' itemprop=\"sameAs\">10.4028\/www.scientific.net\/MSF.740-742.691<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Baum M.<\/span>, <span class=\"author\" itemprop=\"author\">Polster S.<\/span>, <span class=\"author\" itemprop=\"author\">Jank M.<\/span>, <span class=\"author\" itemprop=\"author\">Alexeev I.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Schmidt M.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/123666884?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Laser melting of nanoparticulate transparent conductive oxide thin films<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_123666884\"><span itemprop=\"name\"><strong>Journal of Laser Micro Nanoengineering<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_123666884\" \/><span itemprop=\"volumeNumber\">8<\/span><\/span>  (<span itemprop=\"datePublished\">2013<\/span>), p. <span itemprop=\"pagination\">144-148<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_123666884\"><span itemprop=\"issn\">ISSN: 1880-0688<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.2961\/jlmn.2013.02.0005' target='blank' itemprop=\"sameAs\">10.2961\/jlmn.2013.02.0005<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/Book\"><span class=\"author\" itemprop=\"author\">Behrens T.<\/span>, <span class=\"author\" itemprop=\"author\">Suenner T.<\/span>, <span class=\"author\" itemprop=\"author\">Geinitz E.<\/span>, <span class=\"author\" itemprop=\"author\">Schletz A.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/109372824?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Optimization of copper top-side metallization for high performance SiC-devices<\/a><\/strong><\/span><br \/><span itemprop=\"datePublished\">2013<\/span><br \/><span itemprop=\"isbn\">ISBN: 9783037856246<\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4028\/www.scientific.net\/MSF.740-742.801' target='blank' itemprop=\"sameAs\">10.4028\/www.scientific.net\/MSF.740-742.801<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Fader R.<\/span>, <span class=\"author\" itemprop=\"author\">Landwehr J.<\/span>, <span class=\"author\" itemprop=\"author\">Rumler M.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Voelkel R.<\/span>, <span class=\"author\" itemprop=\"author\">Brehm M.<\/span>, <span class=\"author\" itemprop=\"author\">Kraft A.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/121673684?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Functional epoxy polymer for direct nano-imprinting of micro-optical elements<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_121673684\"><span itemprop=\"name\"><strong>Microelectronic Engineering<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_121673684\" \/><span itemprop=\"volumeNumber\">110<\/span><\/span>  (<span itemprop=\"datePublished\">2013<\/span>), p. <span itemprop=\"pagination\">90-93<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_121673684\"><span itemprop=\"issn\">ISSN: 0167-9317<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.mee.2013.02.030' target='blank' itemprop=\"sameAs\">10.1016\/j.mee.2013.02.030<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Fader R.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Rumler M.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Verschuuren MA.<\/span>, <span class=\"author\" itemprop=\"author\">Van De Laar R.<\/span>, <span class=\"author\" itemprop=\"author\">Ji R.<\/span>, <span class=\"author\" itemprop=\"author\">Schoembs U.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/121073524?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Accuracy of wafer level alignment with substrate conformal imprint lithography<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_121073524\"><span itemprop=\"name\"><strong>Journal of Vacuum Science & Technology B<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_121073524\" \/><span itemprop=\"volumeNumber\">31<\/span><\/span>  (<span itemprop=\"datePublished\">2013<\/span>), p. <span itemprop=\"pagination\">6FB02<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_121073524\"><span itemprop=\"issn\">ISSN: 1071-1023<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1116\/1.4824696' target='blank' itemprop=\"sameAs\">10.1116\/1.4824696<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Hackenberg M.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Rumler M.<\/span>, <span class=\"author\" itemprop=\"author\">Lorenz J.<\/span>, <span class=\"author\" itemprop=\"author\">Pichler P.<\/span>, <span class=\"author\" itemprop=\"author\">Huet K.<\/span>, <span class=\"author\" itemprop=\"author\">Negro R.<\/span>, <span class=\"author\" itemprop=\"author\">Fisicaro .<\/span>, <span class=\"author\" itemprop=\"author\">La Magna A.<\/span>, <span class=\"author\" itemprop=\"author\">Taleb N.<\/span>, <span class=\"author\" itemprop=\"author\">Quillec M.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106313064?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Melt Depth and Time Variations during Pulsed Laser Thermal Annealing with One and More Pulses,<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"name\"><strong>Solid-State Device Research Conference (ESSDERC), 2013 Proceedings of the European<\/strong><\/span>, <span itemprop=\"datePublished\">2013<\/span>, p. <span itemprop=\"pagination\">214-217<\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/ESSDERC.2013.6818857' target='blank' itemprop=\"sameAs\">10.1109\/ESSDERC.2013.6818857<\/a><\/span><\/li><li itemscope itemtype=\"http:\/\/schema.org\/Book\"><span class=\"author\" itemprop=\"author\">H\u00e4ublein V.<\/span>, <span class=\"author\" itemprop=\"author\">Temmel G.<\/span>, <span class=\"author\" itemprop=\"author\">Mitlehner H.<\/span>, <span class=\"author\" itemprop=\"author\">Rattmann G.<\/span>, <span class=\"author\" itemprop=\"author\">Strenger C.<\/span>, <span class=\"author\" itemprop=\"author\">H\u00fcrner A.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/109356984?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Comparative study of n-LIGBT and n-LDMOS structures on 4H-SiC<\/a><\/strong><\/span><br \/><span itemprop=\"datePublished\">2013<\/span><br \/><span itemprop=\"isbn\">ISBN: 9783037856246<\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4028\/www.scientific.net\/MSF.740-742.887' target='blank' itemprop=\"sameAs\">10.4028\/www.scientific.net\/MSF.740-742.887<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/Book\"><span class=\"author\" itemprop=\"author\">H\u00fcrner A.<\/span>, <span class=\"author\" itemprop=\"author\">Schlegl T.<\/span>, <span class=\"author\" itemprop=\"author\">Adelmann B.<\/span>, <span class=\"author\" itemprop=\"author\">Mitlehner H.<\/span>, <span class=\"author\" itemprop=\"author\">Hellmann R.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106451004?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Alloying of ohmic contacts to n-type 4H-SiC via laser irradiation<\/a><\/strong><\/span><br \/><span itemprop=\"datePublished\">2013<\/span><br \/><span itemprop=\"isbn\">ISBN: 9783037856246<\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4028\/www.scientific.net\/MSF.740-742.773' target='blank' itemprop=\"sameAs\">10.4028\/www.scientific.net\/MSF.740-742.773<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Iglesias V.<\/span>, <span class=\"author\" itemprop=\"author\">Martin-Martinez J.<\/span>, <span class=\"author\" itemprop=\"author\">Porti M.<\/span>, <span class=\"author\" itemprop=\"author\">Rodriguez R.<\/span>, <span class=\"author\" itemprop=\"author\">Nafria M.<\/span>, <span class=\"author\" itemprop=\"author\">Aymerich X.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Murakami K.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer AJ.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Bersuker G.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/201971097?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Bimodal CAFM TDDB distributions in polycrystalline HfO2 gate stacks: The role of the interfacial layer and grain boundaries<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_201971097\"><span itemprop=\"name\"><strong>Microelectronic Engineering<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_201971097\" \/><span itemprop=\"volumeNumber\">109<\/span><\/span>  (<span itemprop=\"datePublished\">2013<\/span>), p. <span itemprop=\"pagination\">129-132<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_201971097\"><span itemprop=\"issn\">ISSN: 0167-9317<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.mee.2013.03.022' target='blank' itemprop=\"sameAs\">10.1016\/j.mee.2013.03.022<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Jokubavicius V.<\/span>, <span class=\"author\" itemprop=\"author\">Huang HH.<\/span>, <span class=\"author\" itemprop=\"author\">Schimmel S.<\/span>, <span class=\"author\" itemprop=\"author\">Liljedahl R.<\/span>, <span class=\"author\" itemprop=\"author\">Yakimova R.<\/span>, <span class=\"author\" itemprop=\"author\">Syv\u00e4j\u00e4rvi M.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/281259004?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Towards bulk-like 3C-SiC growth using low off-axis substrates<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_281259004\"><span itemprop=\"name\"><strong>Materials Science Forum<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_281259004\" \/><span itemprop=\"volumeNumber\">740-742<\/span><\/span>  (<span itemprop=\"datePublished\">2013<\/span>), p. <span itemprop=\"pagination\">275-278<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_281259004\"><span itemprop=\"issn\">ISSN: 0255-5476<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4028\/www.scientific.net\/msf.740-742.275' target='blank' itemprop=\"sameAs\">10.4028\/www.scientific.net\/msf.740-742.275<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">K\u00f6lpin N.<\/span>, <span class=\"author\" itemprop=\"author\">Wegener CM.<\/span>, <span class=\"author\" itemprop=\"author\">Teuber E.<\/span>, <span class=\"author\" itemprop=\"author\">Polster S.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Roosen A.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/122977184?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Conceptional design of nano-particulate ITO inks for inkjet printing of electron devices<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_122977184\"><span itemprop=\"name\"><strong>Journal of Materials Science<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_122977184\" \/><span itemprop=\"volumeNumber\">48<\/span><\/span>  (<span itemprop=\"datePublished\">2013<\/span>), p. <span itemprop=\"pagination\">1623-1631<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_122977184\"><span itemprop=\"issn\">ISSN: 0022-2461<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1007\/s10853-012-6919-8' target='blank' itemprop=\"sameAs\">10.1007\/s10853-012-6919-8<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\">K\u00fchn Stephan, Brinkmeyer Dennis:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/360662353?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Composite Material Based on Chitosan Matrix<\/a><\/strong><\/span><br \/> (<span itemprop=\"datePublished\">2013<\/span>)<\/span><br \/>(anderer)<\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Laven JG.<\/span>, <span class=\"author\" itemprop=\"author\">Job R.<\/span>, <span class=\"author\" itemprop=\"author\">Hans Joachim S.<\/span>, <span class=\"author\" itemprop=\"author\">Niedernostheide FJ.<\/span>, <span class=\"author\" itemprop=\"author\">Schustereder W.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/121665544?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Activation and dissociation of proton-induced donor profiles in silicon<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_121665544\"><span itemprop=\"name\"><strong>ECS Journal of Solid State Science and Technology<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_121665544\" \/><span itemprop=\"volumeNumber\">2<\/span><\/span>  (<span itemprop=\"datePublished\">2013<\/span>)<br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_121665544\"><span itemprop=\"issn\">ISSN: 2162-8769<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1149\/2.028309jss' target='blank' itemprop=\"sameAs\">10.1149\/2.028309jss<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/Book\"><span class=\"author\" itemprop=\"author\">Noll S.<\/span>, <span class=\"author\" itemprop=\"author\">Scholten D.<\/span>, <span class=\"author\" itemprop=\"author\">Grieb M.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/109364464?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Electrical impact of the aluminum p-implant annealing on lateral MOSFET transistors on 4H-SiC n-epi<\/a><\/strong><\/span><br \/><span itemprop=\"datePublished\">2013<\/span><br \/><span itemprop=\"isbn\">ISBN: 9783037856246<\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4028\/www.scientific.net\/MSF.740-742.521' target='blank' itemprop=\"sameAs\">10.4028\/www.scientific.net\/MSF.740-742.521<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Ouennoughi Z.<\/span>, <span class=\"author\" itemprop=\"author\">Strenger C.<\/span>, <span class=\"author\" itemprop=\"author\">Bourouba F.<\/span>, <span class=\"author\" itemprop=\"author\">Haeublein V.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106452544?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Conduction mechanisms in thermal nitride and dry gate oxides grown on 4H-SiC<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106452544\"><span itemprop=\"name\"><strong>Microelectronics Reliability<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_106452544\" \/><span itemprop=\"volumeNumber\">53<\/span><\/span>  (<span itemprop=\"datePublished\">2013<\/span>), p. <span itemprop=\"pagination\">1841-1847<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106452544\"><span itemprop=\"issn\">ISSN: 0026-2714<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.microrel.2013.06.009' target='blank' itemprop=\"sameAs\">10.1016\/j.microrel.2013.06.009<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Jambreck JD.<\/span>, <span class=\"author\" itemprop=\"author\">Lemberger M.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Murakami K.<\/span>, <span class=\"author\" itemprop=\"author\">Richter C.<\/span>, <span class=\"author\" itemprop=\"author\">Weinzierl P.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106454084?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Influence of parasitic capacitances on conductive AFM I-V measurements and approaches for its reduction<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106454084\"><span itemprop=\"name\"><strong>Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_106454084\" \/><span itemprop=\"volumeNumber\">31<\/span><\/span>  (<span itemprop=\"datePublished\">2013<\/span>), Article No.: <span itemprop=\"pagination\">01A108<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106454084\"><span itemprop=\"issn\">ISSN: 2166-2754<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1116\/1.4768679' target='blank' itemprop=\"sameAs\">10.1116\/1.4768679<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Rumler M.<\/span>, <span class=\"author\" itemprop=\"author\">Haas A.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer AJ.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/201409743?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Processing of silicon nanostructures by Ga+ resistless lithography and reactive ion etching<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_201409743\"><span itemprop=\"name\"><strong>Microelectronic Engineering<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_201409743\" \/><span itemprop=\"volumeNumber\">110<\/span><\/span>  (<span itemprop=\"datePublished\">2013<\/span>), p. <span itemprop=\"pagination\">177-182<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_201409743\"><span itemprop=\"issn\">ISSN: 0167-9317<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.mee.2013.03.081' target='blank' itemprop=\"sameAs\">10.1016\/j.mee.2013.03.081<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Rumler M.<\/span>, <span class=\"author\" itemprop=\"author\">Fader R.<\/span>, <span class=\"author\" itemprop=\"author\">Haas A.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/121074184?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Evaluation of resistless Ga+ beam lithography for UV NIL stamp fabrication<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_121074184\"><span itemprop=\"name\"><strong>Nanotechnology<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_121074184\" \/><span itemprop=\"volumeNumber\">24<\/span><\/span>  (<span itemprop=\"datePublished\">2013<\/span>), p. <span itemprop=\"pagination\">365302<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_121074184\"><span itemprop=\"issn\">ISSN: 0957-4484<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1088\/0957-4484\/24\/36\/365302' target='blank' itemprop=\"sameAs\">10.1088\/0957-4484\/24\/36\/365302<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Stadler A.<\/span>, <span class=\"author\" itemprop=\"author\">Huber R.<\/span>, <span class=\"author\" itemprop=\"author\">Stolzke T.<\/span>, <span class=\"author\" itemprop=\"author\">Gulden C.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106256744?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">The simulation of copper losses in litz-wire windings considering air gap fringing fields<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2013<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Nuremberg<\/span><\/span><span itemprop=\"startDate\" content=\"2013\"><\/span>)<\/span><br \/>URL: <a href='https:\/\/www.scopus.com\/inward\/record.uri?partnerID=HzOxMe3b&scp=84906347177\u2228igin=inward' target='blank' itemprop=\"url\">https:\/\/www.scopus.com\/inward\/record.uri?partnerID=HzOxMe3b&scp=84906347177\u2228igin=inward<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Strenger C.<\/span>, <span class=\"author\" itemprop=\"author\">Uhnevionak V.<\/span>, <span class=\"author\" itemprop=\"author\">Burenkov A.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Pichler P.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/121674784?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Influence of ion implantation in SiC on the channel mobility in lateral n-channel MOSFETs<\/a><\/strong><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1149\/05804.0071ecst' target='blank' itemprop=\"sameAs\">10.1149\/05804.0071ecst<\/a><\/li><\/ul><h3>2012<\/h3><ul class=\"cris-publications \" lang=\"en\"><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Alt NS.<\/span>, <span class=\"author\" itemprop=\"author\">Meissner E.<\/span>, <span class=\"author\" itemprop=\"author\">Schl\u00fccker E.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/109631544?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">In situ monitoring technologies for ammonthermal reactors<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_109631544\"><span itemprop=\"name\"><strong>Physica Status Solidi (C) Current Topics in Solid State Physics<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_109631544\" \/><span itemprop=\"volumeNumber\">9<\/span><\/span>  (<span itemprop=\"datePublished\">2012<\/span>), p. <span itemprop=\"pagination\">436-439<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_109631544\"><span itemprop=\"issn\">ISSN: 1862-6351<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1002\/pssc.201100361' target='blank' itemprop=\"sameAs\">10.1002\/pssc.201100361<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Baum M.<\/span>, <span class=\"author\" itemprop=\"author\">Polster S.<\/span>, <span class=\"author\" itemprop=\"author\">Jank M.<\/span>, <span class=\"author\" itemprop=\"author\">Alexeev I.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Schmidt M.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/112904484?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Efficient laser induced consolidation of nanoparticulate ZnO thin films with reduced thermal budget<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_112904484\"><span itemprop=\"name\"><strong>Applied Physics A-Materials Science & Processing<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_112904484\" \/><span itemprop=\"volumeNumber\">107<\/span><\/span>  (<span itemprop=\"datePublished\">2012<\/span>), p. <span itemprop=\"pagination\">269-273<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_112904484\"><span itemprop=\"issn\">ISSN: 0947-8396<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1007\/s00339-012-6871-0' target='blank' itemprop=\"sameAs\">10.1007\/s00339-012-6871-0<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/Book\"><span class=\"author\" itemprop=\"author\">Daves W.<\/span>, <span class=\"author\" itemprop=\"author\">Krauss A.<\/span>, <span class=\"author\" itemprop=\"author\">Haeublein V.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106799704?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">4H-SiC MOSFETs with a stable protective coating for harsh environment applications<\/a><\/strong><\/span><br \/><span itemprop=\"datePublished\">2012<\/span><br \/><span itemprop=\"isbn\">ISBN: 9783037854198<\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4028\/www.scientific.net\/MSF.717-720.1089' target='blank' itemprop=\"sameAs\">10.4028\/www.scientific.net\/MSF.717-720.1089<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Daves W.<\/span>, <span class=\"author\" itemprop=\"author\">Krau\u00df A.<\/span>, <span class=\"author\" itemprop=\"author\">H\u00e4ublein V.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/109633744?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Structural and reliability analysis of ohmic contacts to SiC with a stable protective coating for harsh environment applications<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_109633744\"><span itemprop=\"name\"><strong>ECS Journal of Solid State Science and Technology<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_109633744\" \/><span itemprop=\"volumeNumber\">1<\/span><\/span>  (<span itemprop=\"datePublished\">2012<\/span>)<br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_109633744\"><span itemprop=\"issn\">ISSN: 2162-8769<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1149\/2.019201jss' target='blank' itemprop=\"sameAs\">10.1149\/2.019201jss<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer AJ.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106803444?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Significant on-resistance reduction of LDMOS devices by intermitted trench gates integration<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106803444\"><span itemprop=\"name\"><strong>IEEE Transactions on Electron Devices<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_106803444\" \/><span itemprop=\"volumeNumber\">59<\/span><\/span>  (<span itemprop=\"datePublished\">2012<\/span>), p. <span itemprop=\"pagination\">3470-3476<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106803444\"><span itemprop=\"issn\">ISSN: 0018-9383<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/TED.2012.2220777' target='blank' itemprop=\"sameAs\">10.1109\/TED.2012.2220777<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>, <span class=\"author\" itemprop=\"author\">Bickermann M.<\/span>, <span class=\"author\" itemprop=\"author\">Kallinger B.<\/span>, <span class=\"author\" itemprop=\"author\">Meissner E.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/109597884?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Ohmic and rectifying contacts on bulk AlN for radiation detector applications<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_109597884\"><span itemprop=\"name\"><strong>Physica Status Solidi (C) Current Topics in Solid State Physics<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_109597884\" \/><span itemprop=\"volumeNumber\">9<\/span><\/span>  (<span itemprop=\"datePublished\">2012<\/span>), p. <span itemprop=\"pagination\">968-971<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_109597884\"><span itemprop=\"issn\">ISSN: 1862-6351<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1002\/pssc.201100341' target='blank' itemprop=\"sameAs\">10.1002\/pssc.201100341<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>, <span class=\"author\" itemprop=\"author\">Schwarzmann H.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer AJ.<\/span>, <span class=\"author\" itemprop=\"author\">Berberich SE.<\/span>, <span class=\"author\" itemprop=\"author\">vom Dorp J.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/122218844?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Improving module performance and reliability in power electronic applications by monolithic integration of RC-snubbers<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">24th International Symposium on Power Semiconductor Devices and ICs, ISPSD'12<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Bruges<\/span><\/span><span itemprop=\"startDate\" content=\"2012\"><\/span>)<\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/ISPSD.2012.6229078' target='blank' itemprop=\"sameAs\">10.1109\/ISPSD.2012.6229078<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Fader R.<\/span>, <span class=\"author\" itemprop=\"author\">Schmitt H.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer AJ.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Ji R.<\/span>, <span class=\"author\" itemprop=\"author\">Hornung M.<\/span>, <span class=\"author\" itemprop=\"author\">Brehm M.<\/span>, <span class=\"author\" itemprop=\"author\">Vogler M.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106801684?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Novel organic polymer for UV-enhanced substrate conformal imprint lithography<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106801684\"><span itemprop=\"name\"><strong>Microelectronic Engineering<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_106801684\" \/><span itemprop=\"volumeNumber\">98<\/span><\/span>  (<span itemprop=\"datePublished\">2012<\/span>), p. <span itemprop=\"pagination\">238-241<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106801684\"><span itemprop=\"issn\">ISSN: 0167-9317<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.mee.2012.07.010' target='blank' itemprop=\"sameAs\">10.1016\/j.mee.2012.07.010<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">H\u00fcrner A.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/109592824?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Feasibility and limitations of anti-fuses based on bistable non-volatile switches for power electronic applications<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_109592824\"><span itemprop=\"name\"><strong>Solid-State Electronics<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_109592824\" \/><span itemprop=\"volumeNumber\">75<\/span><\/span>  (<span itemprop=\"datePublished\">2012<\/span>), p. <span itemprop=\"pagination\">33-36<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_109592824\"><span itemprop=\"issn\">ISSN: 0038-1101<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.sse.2012.05.004' target='blank' itemprop=\"sameAs\">10.1016\/j.sse.2012.05.004<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Hilden T.<\/span>, <span class=\"author\" itemprop=\"author\">Janker P.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/201967684?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Reverse recovery of All-SiC switches<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2012<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Nuremberg<\/span><\/span><span itemprop=\"startDate\" content=\"2012\"><\/span>)<\/span><br \/>URL: <a href='https:\/\/www.scopus.com\/record\/display.uri?eid=2-s2.0-84874123396\u2228igin=inward' target='blank' itemprop=\"url\">https:\/\/www.scopus.com\/record\/display.uri?eid=2-s2.0-84874123396\u2228igin=inward<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Hofmann M.<\/span>, <span class=\"author\" itemprop=\"author\">Schletz A.<\/span>, <span class=\"author\" itemprop=\"author\">Domes K.<\/span>, <span class=\"author\" itemprop=\"author\">M\u00e4rz M.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/201967091?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Modular inverter power electronic for intelligent e-drives<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">2012 2nd International Electric Drives Production Conference, EDPC 2012<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Nuremberg<\/span><\/span><span itemprop=\"startDate\" content=\"2012\"><\/span>)<\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/EDPC.2012.6425132' target='blank' itemprop=\"sameAs\">10.1109\/EDPC.2012.6425132<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">H\u00e4ublein V.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106791344?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Purity of ion beams: Analysis and simulation of mass spectra and mass interferences in ion implantation<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106791344\"><span itemprop=\"name\"><strong>Advances in Materials Science and Engineering<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_106791344\" \/><span itemprop=\"volumeNumber\">2012<\/span><\/span>  (<span itemprop=\"datePublished\">2012<\/span>), Article No.: <span itemprop=\"pagination\">610150<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106791344\"><span itemprop=\"issn\">ISSN: 1687-8434<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1155\/2012\/610150' target='blank' itemprop=\"sameAs\">10.1155\/2012\/610150<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Krach F.<\/span>, <span class=\"author\" itemprop=\"author\">Hertel S.<\/span>, <span class=\"author\" itemprop=\"author\">Waldmann D.<\/span>, <span class=\"author\" itemprop=\"author\">Jobst J.<\/span>, <span class=\"author\" itemprop=\"author\">Krieger M.<\/span>, <span class=\"author\" itemprop=\"author\">Reshanov S.<\/span>, <span class=\"author\" itemprop=\"author\">Schoner A.<\/span>, <span class=\"author\" itemprop=\"author\">Weber HB.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/115246384?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">A switch for epitaxial graphene electronics: Utilizing the silicon carbide substrate as transistor channel<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_115246384\"><span itemprop=\"name\"><strong>Applied Physics Letters<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_115246384\" \/><span itemprop=\"volumeNumber\">100<\/span><\/span>  (<span itemprop=\"datePublished\">2012<\/span>), p. <span itemprop=\"pagination\">122102<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_115246384\"><span itemprop=\"issn\">ISSN: 0003-6951<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1063\/1.3695157' target='blank' itemprop=\"sameAs\">10.1063\/1.3695157<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Laven J.<\/span>, <span class=\"author\" itemprop=\"author\">Job R.<\/span>, <span class=\"author\" itemprop=\"author\">Schulze H-.<\/span>, <span class=\"author\" itemprop=\"author\">Niedernostheide FJ.<\/span>, <span class=\"author\" itemprop=\"author\">Schustereder W.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/201968270?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">The thermal budget of hydrogen-related donor profiles: Diffusion-limited activation and thermal dissociation<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">12th High Purity Silicon Symposium - 222nd ECS Meeting<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Honolulu, HI<\/span><\/span><span itemprop=\"startDate\" content=\"2012\"><\/span>)<\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1149\/05005.0161ecst' target='blank' itemprop=\"sameAs\">10.1149\/05005.0161ecst<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Lorentz V.<\/span>, <span class=\"author\" itemprop=\"author\">Wenger M.<\/span>, <span class=\"author\" itemprop=\"author\">Giegerich M.<\/span>, <span class=\"author\" itemprop=\"author\">Zeltner S.<\/span>, <span class=\"author\" itemprop=\"author\">M\u00e4rz M.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/109632424?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Smart battery cell monitoring with contactless data transmission<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">16th International Forum on Advanced Microsystems for Automotive Applications, AMAA 2012<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Berlin<\/span><\/span><span itemprop=\"startDate\" content=\"2012\"><\/span>)<\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1007\/978-3-642-29673-4_2' target='blank' itemprop=\"sameAs\">10.1007\/978-3-642-29673-4_2<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Lorentz V.<\/span>, <span class=\"author\" itemprop=\"author\">Wenger M.<\/span>, <span class=\"author\" itemprop=\"author\">Grosch J.<\/span>, <span class=\"author\" itemprop=\"author\">Giegerich M.<\/span>, <span class=\"author\" itemprop=\"author\">Jank M.<\/span>, <span class=\"author\" itemprop=\"author\">M\u00e4rz M.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/201967407?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Novel cost-efficient contactless distributed monitoring concept for smart battery cells<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">21st IEEE International Symposium on Industrial Electronics, ISIE 2012<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Hangzhou<\/span><\/span><span itemprop=\"startDate\" content=\"2012\"><\/span>)<\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/ISIE.2012.6237285' target='blank' itemprop=\"sameAs\">10.1109\/ISIE.2012.6237285<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Maier R.<\/span>, <span class=\"author\" itemprop=\"author\">Haeublein V.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>, <span class=\"author\" itemprop=\"author\">V\u00f6llm H.<\/span>, <span class=\"author\" itemprop=\"author\">Feili D.<\/span>, <span class=\"author\" itemprop=\"author\">Seidel H.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/201967951?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Solid-phase epitaxy of silicon amorphized by implantation of the alkali elements rubidium and cesium<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">19th International Conference on Ion Implantation Technology 2012, IIT 2012<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Valladolid<\/span><\/span><span itemprop=\"startDate\" content=\"2012\"><\/span>)<\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1063\/1.4766542' target='blank' itemprop=\"sameAs\">10.1063\/1.4766542<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Mueller J.<\/span>, <span class=\"author\" itemprop=\"author\">Boescke TS.<\/span>, <span class=\"author\" itemprop=\"author\">Schroeder U.<\/span>, <span class=\"author\" itemprop=\"author\">Hoffmann R.<\/span>, <span class=\"author\" itemprop=\"author\">Mikolajick T.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106801024?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Nanosecond polarization switching and long retention in a novel MFIS-FET based on ferroelectric HfO 2<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106801024\"><span itemprop=\"name\"><strong>IEEE Electron Device Letters<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_106801024\" \/><span itemprop=\"volumeNumber\">33<\/span><\/span>  (<span itemprop=\"datePublished\">2012<\/span>), p. <span itemprop=\"pagination\">185-187<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106801024\"><span itemprop=\"issn\">ISSN: 0741-3106<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/LED.2011.2177435' target='blank' itemprop=\"sameAs\">10.1109\/LED.2011.2177435<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Mueller J.<\/span>, <span class=\"author\" itemprop=\"author\">Boescke TS.<\/span>, <span class=\"author\" itemprop=\"author\">Schroeder U.<\/span>, <span class=\"author\" itemprop=\"author\">Mueller S.<\/span>, <span class=\"author\" itemprop=\"author\">Braeuhaus D.<\/span>, <span class=\"author\" itemprop=\"author\">Boettger U.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Mikolajick T.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/120012684?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Ferroelectricity in simple binary ZrO 2 and HfO 2<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_120012684\"><span itemprop=\"name\"><strong>Nano Letters<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_120012684\" \/><span itemprop=\"volumeNumber\">12<\/span><\/span>  (<span itemprop=\"datePublished\">2012<\/span>), p. <span itemprop=\"pagination\">4318-4323<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_120012684\"><span itemprop=\"issn\">ISSN: 1530-6984<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1021\/nl302049k' target='blank' itemprop=\"sameAs\">10.1021\/nl302049k<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Roll G.<\/span>, <span class=\"author\" itemprop=\"author\">Jakschik S.<\/span>, <span class=\"author\" itemprop=\"author\">Goldmann M.<\/span>, <span class=\"author\" itemprop=\"author\">Wachowiak A.<\/span>, <span class=\"author\" itemprop=\"author\">Mikolajick T.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/201966809?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Intrinsic MOSFET leakage of high-k peripheral DRAM devices: Measurement and simulation<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">2012 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA 2012<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Hsinchu<\/span><\/span><span itemprop=\"startDate\" content=\"2012\"><\/span>)<\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/VLSI-TSA.2012.6210165' target='blank' itemprop=\"sameAs\">10.1109\/VLSI-TSA.2012.6210165<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer AJ.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106321204?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Simple and efficient method to fabricate nano cone arrays by FIB milling demonstrated on planar substrates and on protruded structures<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106321204\"><span itemprop=\"name\"><strong>Microelectronic Engineering<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_106321204\" \/><span itemprop=\"volumeNumber\">98<\/span><\/span>  (<span itemprop=\"datePublished\">2012<\/span>), p. <span itemprop=\"pagination\">242-245<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106321204\"><span itemprop=\"issn\">ISSN: 0167-9317<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.mee.2012.07.009' target='blank' itemprop=\"sameAs\">10.1016\/j.mee.2012.07.009<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Rumler M.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Erlekampf J.<\/span>, <span class=\"author\" itemprop=\"author\">Azizi M.<\/span>, <span class=\"author\" itemprop=\"author\">Geiger T.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer AJ.<\/span>, <span class=\"author\" itemprop=\"author\">Meissner E.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/120027644?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Characterization of grain boundaries in multicrystalline silicon with high lateral resolution using conductive atomic force microscopy<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_120027644\"><span itemprop=\"name\"><strong>Journal of Applied Physics<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_120027644\" \/><span itemprop=\"volumeNumber\">112<\/span><\/span>  (<span itemprop=\"datePublished\">2012<\/span>), Article No.: <span itemprop=\"pagination\">034909<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_120027644\"><span itemprop=\"issn\">ISSN: 0021-8979<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1063\/1.4746742' target='blank' itemprop=\"sameAs\">10.1063\/1.4746742<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Schmitt H.<\/span>, <span class=\"author\" itemprop=\"author\">Duempelmann P.<\/span>, <span class=\"author\" itemprop=\"author\">Fader R.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer AJ.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Brehm M.<\/span>, <span class=\"author\" itemprop=\"author\">Kraft A.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/109632204?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Life time evaluation of PDMS stamps for UV-enhanced substrate conformal imprint lithography<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_109632204\"><span itemprop=\"name\"><strong>Microelectronic Engineering<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_109632204\" \/><span itemprop=\"volumeNumber\">98<\/span><\/span>  (<span itemprop=\"datePublished\">2012<\/span>), p. <span itemprop=\"pagination\">275-278<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_109632204\"><span itemprop=\"issn\">ISSN: 0167-9317<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.mee.2012.04.032' target='blank' itemprop=\"sameAs\">10.1016\/j.mee.2012.04.032<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\">Schmitt H, J\u00e4ger J, et al:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/277656736?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Application and Feasibility of Fault Current Limiters in Power Systems<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_277656736\"><span itemprop=\"name\"><strong>Electra<\/strong><\/span><\/span> (<span itemprop=\"datePublished\">2012<\/span>), p. <span itemprop=\"pagination\">51-57<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_277656736\"><span itemprop=\"issn\">ISSN: 0424-7701<\/span><\/span><\/span><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Schwarzmann H.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/201966229?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Amplitude modulated resonant push-pull driver for piezoelectric transformers in switching power applications<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">2012 7th International Conference on Integrated Power Electronics Systems, CIPS 2012<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Nuremberg<\/span><\/span><span itemprop=\"startDate\" content=\"2012\"><\/span>)<\/span><br \/>URL: <a href='https:\/\/www.scopus.com\/record\/display.uri?eid=2-s2.0-84881091503\u2228igin=inward' target='blank' itemprop=\"url\">https:\/\/www.scopus.com\/record\/display.uri?eid=2-s2.0-84881091503\u2228igin=inward<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Stadler A.<\/span>, <span class=\"author\" itemprop=\"author\">Gulden C.<\/span>, <span class=\"author\" itemprop=\"author\">Stolzke T.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106254324?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Nonlinear inductors for active power factor correction circuits<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">15th International Power Electronics and Motion Control Conference and Exposition, EPE-PEMC 2012 ECCE Europe<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Novi Sad<\/span><\/span><span itemprop=\"startDate\" content=\"2012\"><\/span>)<\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/EPEPEMC.2012.6397508' target='blank' itemprop=\"sameAs\">10.1109\/EPEPEMC.2012.6397508<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Stadler A.<\/span>, <span class=\"author\" itemprop=\"author\">Stolzke T.<\/span>, <span class=\"author\" itemprop=\"author\">Gulden C.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/119319244?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Nonlinear power inductors for large current crest factors<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, PCIM Europe 2012<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Nuremberg<\/span><\/span><span itemprop=\"startDate\" content=\"2012\"><\/span>)<\/span><br \/>URL: <a href='https:\/\/www.scopus.com\/inward\/record.uri?partnerID=HzOxMe3b&scp=84874154772\u2228igin=inward' target='blank' itemprop=\"url\">https:\/\/www.scopus.com\/inward\/record.uri?partnerID=HzOxMe3b&scp=84874154772\u2228igin=inward<\/a><\/li><\/ul><h3>2011<\/h3><ul class=\"cris-publications \" lang=\"en\"><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Bickermann M.<\/span>, <span class=\"author\" itemprop=\"author\">Schimmel S.<\/span>, <span class=\"author\" itemprop=\"author\">Epelbaum B.<\/span>, <span class=\"author\" itemprop=\"author\">Filip O.<\/span>, <span class=\"author\" itemprop=\"author\">Heimann P.<\/span>, <span class=\"author\" itemprop=\"author\">Nagata S.<\/span>, <span class=\"author\" itemprop=\"author\">Winnacker A.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/281254417?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Structural defects in aluminium nitride bulk crystals visualized by cathodoluminescence maps<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_281254417\"><span itemprop=\"name\"><strong>Physica Status Solidi (C) Current Topics in Solid State Physics<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_281254417\" \/><span itemprop=\"volumeNumber\">8<\/span><\/span>  (<span itemprop=\"datePublished\">2011<\/span>), p. <span itemprop=\"pagination\">2235\u20132238<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_281254417\"><span itemprop=\"issn\">ISSN: 1862-6351<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1002\/pssc.201000864' target='blank' itemprop=\"sameAs\">10.1002\/pssc.201000864<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Daves W.<\/span>, <span class=\"author\" itemprop=\"author\">Krauss A.<\/span>, <span class=\"author\" itemprop=\"author\">Behnel N.<\/span>, <span class=\"author\" itemprop=\"author\">Haeublein V.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106840404?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Amorphous silicon carbide thin films (a-SiC:H) deposited by plasma-enhanced chemical vapor deposition as protective coatings for harsh environment applications<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106840404\"><span itemprop=\"name\"><strong>Thin Solid Films<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_106840404\" \/><span itemprop=\"volumeNumber\">519<\/span><\/span>  (<span itemprop=\"datePublished\">2011<\/span>), p. <span itemprop=\"pagination\">5892-5898<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106840404\"><span itemprop=\"issn\">ISSN: 0040-6090<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.tsf.2011.02.089' target='blank' itemprop=\"sameAs\">10.1016\/j.tsf.2011.02.089<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Daves W.<\/span>, <span class=\"author\" itemprop=\"author\">Krauss A.<\/span>, <span class=\"author\" itemprop=\"author\">Haeublein V.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer AJ.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/120004324?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Enhancement of the stability of Ti and Ni ohmic contacts to 4H-SiC with a stable protective coating for harsh environment applications<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_120004324\"><span itemprop=\"name\"><strong>Journal of Electronic Materials<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_120004324\" \/><span itemprop=\"volumeNumber\">40<\/span><\/span>  (<span itemprop=\"datePublished\">2011<\/span>), p. <span itemprop=\"pagination\">1990-1997<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_120004324\"><span itemprop=\"issn\">ISSN: 0361-5235<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1007\/s11664-011-1681-2' target='blank' itemprop=\"sameAs\">10.1007\/s11664-011-1681-2<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Daves W.<\/span>, <span class=\"author\" itemprop=\"author\">Krauss A.<\/span>, <span class=\"author\" itemprop=\"author\">H\u00e4ublein V.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/201958018?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Electrical characterization of lateral 4H-SiC MOSFETs in the temperature range of 25 to 600 \u00b0C for harsh environment applications<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">2011 IMAPS International Conference on High Temperature Electronics Network, HiTEN 2011<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Oxford<\/span><\/span><span itemprop=\"startDate\" content=\"2011\"><\/span>)<\/span><br \/>URL: <a href='https:\/\/www.scopus.com\/record\/display.uri?eid=2-s2.0-84876889044\u2228igin=inward' target='blank' itemprop=\"url\">https:\/\/www.scopus.com\/record\/display.uri?eid=2-s2.0-84876889044\u2228igin=inward<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/Book\"><span class=\"author\" itemprop=\"author\">Daves W.<\/span>, <span class=\"author\" itemprop=\"author\">Krauss A.<\/span>, <span class=\"author\" itemprop=\"author\">Le-Huu M.<\/span>, <span class=\"author\" itemprop=\"author\">Kronm\u00fcller S.<\/span>, <span class=\"author\" itemprop=\"author\">Haeublein V.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106841504?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Comparative study on metallization and passivation materials for high temperature sensor applications<\/a><\/strong><\/span><br \/><span itemprop=\"datePublished\">2011<\/span><br \/><span itemprop=\"isbn\">ISBN: 9783037850794<\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4028\/www.scientific.net\/MSF.679-680.449' target='blank' itemprop=\"sameAs\">10.4028\/www.scientific.net\/MSF.679-680.449<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>, <span class=\"author\" itemprop=\"author\">Yanev VC.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/107299104?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Gate oxide reliability at the nanoscale evaluated by combining conductive atomic force microscopy and constant voltage stress<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_107299104\"><span itemprop=\"name\"><strong>Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_107299104\" \/><span itemprop=\"volumeNumber\">29<\/span><\/span>  (<span itemprop=\"datePublished\">2011<\/span>), p. <span itemprop=\"pagination\">01AB08<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_107299104\"><span itemprop=\"issn\">ISSN: 0734-211X<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1116\/1.3532820' target='blank' itemprop=\"sameAs\">10.1116\/1.3532820<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Fet A.<\/span>, <span class=\"author\" itemprop=\"author\">Haeublein V.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer AJ.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106844804?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Fluorine implantation for effective work function control in p-type metal-oxide-semiconductor high-k metal gate stacks<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106844804\"><span itemprop=\"name\"><strong>Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_106844804\" \/><span itemprop=\"volumeNumber\">29<\/span><\/span>  (<span itemprop=\"datePublished\">2011<\/span>)<br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106844804\"><span itemprop=\"issn\">ISSN: 2166-2754<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1116\/1.3521471' target='blank' itemprop=\"sameAs\">10.1116\/1.3521471<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/Book\"><span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Le-Huu M.<\/span>, <span class=\"author\" itemprop=\"author\">Grieb M.<\/span>, <span class=\"author\" itemprop=\"author\">Schrey F.<\/span>, <span class=\"author\" itemprop=\"author\">Schmitt H.<\/span>, <span class=\"author\" itemprop=\"author\">Haeublein V.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106839744?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">4H-SiC n-MOSFET logic circuits for high temperature operation<\/a><\/strong><\/span><br \/><span itemprop=\"datePublished\">2011<\/span><br \/><span itemprop=\"isbn\">ISBN: 9783037850794<\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4028\/www.scientific.net\/MSF.679-680.734' target='blank' itemprop=\"sameAs\">10.4028\/www.scientific.net\/MSF.679-680.734<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Garcia E.<\/span>, <span class=\"author\" itemprop=\"author\">S\u00fcltrop C.<\/span>, <span class=\"author\" itemprop=\"author\">Hausotte T.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/203214735?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Verbesserung der Detektion sph\u00e4rischer Marker f\u00fcr die optische Navigationschirurgie.<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">10. Jahrestagung der Deutschen Gesellschaft f\u00fcr Computer- und Roboterassistierte Chirurgie<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Magedeburg<\/span><\/span>, <span itemprop=\"startDate\" content=\"2011-09-15\">15. September 2011<\/span> - <span itemprop=\"endDate\" content=\"2011-09-16\">16. September 2011<\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"author\">Bugert O, Schipper J, Zachow S (ed.): <\/span><span itemprop=\"name\" style=\"font-weight:bold\">Proceedings, 10. Jahrestagung der Deutschen Gesellschaft f\u00fcr Computer- und Roboterassistierte Chirurgie<\/span> <span itemprop=\"datePublished\">2011<\/span><\/span><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Hofmann M.<\/span>, <span class=\"author\" itemprop=\"author\">Eckhardt B.<\/span>, <span class=\"author\" itemprop=\"author\">M\u00e4rz M.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/201960722?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Thermal characterization of an axle-twin-drive with system integrated double-inverter<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">1st International Electric Drives Production Conference, EDPC-2011<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Nuremberg<\/span><\/span><span itemprop=\"startDate\" content=\"2011\"><\/span>)<\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/EDPC.2011.6085560' target='blank' itemprop=\"sameAs\">10.1109\/EDPC.2011.6085560<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Huang J.<\/span>, <span class=\"author\" itemprop=\"author\">Ujwal R.<\/span>, <span class=\"author\" itemprop=\"author\">Lemberger M.<\/span>, <span class=\"author\" itemprop=\"author\">Jank M.<\/span>, <span class=\"author\" itemprop=\"author\">Polster S.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/201957725?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Effects of oxygen and forming gas annealing on ZnO TFTs<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">2010 MRS Fall Meeting<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Boston, MA<\/span><\/span><span itemprop=\"startDate\" content=\"2011\"><\/span>)<\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1557\/opl.2011.1144' target='blank' itemprop=\"sameAs\">10.1557\/opl.2011.1144<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Jambreck J.<\/span>, <span class=\"author\" itemprop=\"author\">B\u00f6hmler M.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Hartschuh A.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/201959814?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Light confinement by structured metal tips for antenna-based scanning near-field optical microscopy<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">Instrumentation, Metrology, and Standards for Nanomanufacturing, Optics, and Semiconductors V<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">San Diego, CA<\/span><\/span><span itemprop=\"startDate\" content=\"2011\"><\/span>)<\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1117\/12.893306' target='blank' itemprop=\"sameAs\">10.1117\/12.893306<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Jambreck JD.<\/span>, <span class=\"author\" itemprop=\"author\">Yanev V.<\/span>, <span class=\"author\" itemprop=\"author\">Schmitt H.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer AJ.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106848104?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Manufacturing, characterization, and application of nanoimprinted metallic probe demonstrators for electrical scanning probe microscopy<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106848104\"><span itemprop=\"name\"><strong>Microelectronic Engineering<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_106848104\" \/><span itemprop=\"volumeNumber\">88<\/span><\/span>  (<span itemprop=\"datePublished\">2011<\/span>), p. <span itemprop=\"pagination\">2584-2588<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106848104\"><span itemprop=\"issn\">ISSN: 0167-9317<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.mee.2010.12.022' target='blank' itemprop=\"sameAs\">10.1016\/j.mee.2010.12.022<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Jank M.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Peukert W.<\/span>, <span class=\"author\" itemprop=\"author\">K\u00f6rmer R.<\/span>, <span class=\"author\" itemprop=\"author\">Wu J.<\/span>, <span class=\"author\" itemprop=\"author\">Otto M.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/117421964?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">EPR investigations of non-oxidized silicon nanoparticles from thermal pyrolysis of silane<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_117421964\"><span itemprop=\"name\"><strong>Physica Status Solidi<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_117421964\" \/><span itemprop=\"volumeNumber\">5<\/span><\/span>  (<span itemprop=\"datePublished\">2011<\/span>), p. <span itemprop=\"pagination\">244-246<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_117421964\"><span itemprop=\"issn\">ISSN: 0031-8957<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1002\/pssr.201105208' target='blank' itemprop=\"sameAs\">10.1002\/pssr.201105208<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Kaiser RJ.<\/span>, <span class=\"author\" itemprop=\"author\">Koffel S.<\/span>, <span class=\"author\" itemprop=\"author\">Pichler P.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer AJ.<\/span>, <span class=\"author\" itemprop=\"author\">Amon B.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/120022364?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Germanium substrate loss during thermal processing<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_120022364\"><span itemprop=\"name\"><strong>Microelectronic Engineering<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_120022364\" \/><span itemprop=\"volumeNumber\">88<\/span><\/span>  (<span itemprop=\"datePublished\">2011<\/span>), p. <span itemprop=\"pagination\">499-502<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_120022364\"><span itemprop=\"issn\">ISSN: 0167-9317<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.mee.2010.08.031' target='blank' itemprop=\"sameAs\">10.1016\/j.mee.2010.08.031<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Koffel S.<\/span>, <span class=\"author\" itemprop=\"author\">Kaiser RJ.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer AJ.<\/span>, <span class=\"author\" itemprop=\"author\">Amon B.<\/span>, <span class=\"author\" itemprop=\"author\">Pichler P.<\/span>, <span class=\"author\" itemprop=\"author\">Lorenz J.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Scheiblin P.<\/span>, <span class=\"author\" itemprop=\"author\">Mazzocchi V.<\/span>, <span class=\"author\" itemprop=\"author\">Barnes J-.<\/span>, <span class=\"author\" itemprop=\"author\">Claverie A.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/120022144?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Experiments and simulation of the diffusion and activation of the n-type dopants P, As, and Sb implanted into germanium<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_120022144\"><span itemprop=\"name\"><strong>Microelectronic Engineering<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_120022144\" \/><span itemprop=\"volumeNumber\">88<\/span><\/span>  (<span itemprop=\"datePublished\">2011<\/span>), p. <span itemprop=\"pagination\">458-461<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_120022144\"><span itemprop=\"issn\">ISSN: 0167-9317<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.mee.2010.09.023' target='blank' itemprop=\"sameAs\">10.1016\/j.mee.2010.09.023<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Laven J.<\/span>, <span class=\"author\" itemprop=\"author\">Hans Joachim S.<\/span>, <span class=\"author\" itemprop=\"author\">H\u00e4ublein V.<\/span>, <span class=\"author\" itemprop=\"author\">Niedernostheide FJ.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/107298224?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Dopant profiles in silicon created by MeV hydrogen implantation: Influence of annealing parameters<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_107298224\"><span itemprop=\"name\"><strong>Physica Status Solidi (C) Current Topics in Solid State Physics<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_107298224\" \/><span itemprop=\"volumeNumber\">8<\/span><\/span>  (<span itemprop=\"datePublished\">2011<\/span>), p. <span itemprop=\"pagination\">697--700<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_107298224\"><span itemprop=\"issn\">ISSN: 1862-6351<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1002\/pssc.201000161' target='blank' itemprop=\"sameAs\">10.1002\/pssc.201000161<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/Book\"><span class=\"author\" itemprop=\"author\">Laven JG.<\/span>, <span class=\"author\" itemprop=\"author\">Job R.<\/span>, <span class=\"author\" itemprop=\"author\">Schustereder W.<\/span>, <span class=\"author\" itemprop=\"author\">Hans Joachim S.<\/span>, <span class=\"author\" itemprop=\"author\">Niedernostheide FJ.<\/span>, <span class=\"author\" itemprop=\"author\">Schulze H.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106842824?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Conversion efficiency of radiation damage profiles into hydrogenrelated donor profiles<\/a><\/strong><\/span><br \/><span itemprop=\"publisher\" itemscope itemtype=\"http:\/\/schema.org\/Organization\"><span itemprop=\"name\">Trans Tech Publications Ltd<\/span><\/span>, <span itemprop=\"datePublished\">2011<\/span><br \/><span itemprop=\"isbn\">ISBN: 9783037852323<\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4028\/www.scientific.net\/SSP.178-179.375' target='blank' itemprop=\"sameAs\">10.4028\/www.scientific.net\/SSP.178-179.375<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Le-Huu M.<\/span>, <span class=\"author\" itemprop=\"author\">Schmitt H.<\/span>, <span class=\"author\" itemprop=\"author\">Noll S.<\/span>, <span class=\"author\" itemprop=\"author\">Grieb M.<\/span>, <span class=\"author\" itemprop=\"author\">Schrey FF.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer AJ.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106845684?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Investigation of the reliability of 4H-SiC MOS devices for high temperature applications<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106845684\"><span itemprop=\"name\"><strong>Microelectronics Reliability<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_106845684\" \/><span itemprop=\"volumeNumber\">51<\/span><\/span>  (<span itemprop=\"datePublished\">2011<\/span>), p. <span itemprop=\"pagination\">1346-1350<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106845684\"><span itemprop=\"issn\">ISSN: 0026-2714<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.microrel.2011.03.015' target='blank' itemprop=\"sameAs\">10.1016\/j.microrel.2011.03.015<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Lorentz VRH.<\/span>, <span class=\"author\" itemprop=\"author\">Schwarzmann H.<\/span>, <span class=\"author\" itemprop=\"author\">M\u00e4rz M.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer AJ.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Poure P.<\/span>, <span class=\"author\" itemprop=\"author\">Braun F.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/120329484?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">A novel PWM control for a bi-directional full-bridge DC-DC converter with smooth conversion mode transitions<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_120329484\"><span itemprop=\"name\"><strong>International Journal of Electronics<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_120329484\" \/><span itemprop=\"volumeNumber\">98<\/span><\/span>  (<span itemprop=\"datePublished\">2011<\/span>), p. <span itemprop=\"pagination\">1025-1054<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_120329484\"><span itemprop=\"issn\">ISSN: 0020-7217<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1080\/00207217.2011.567035' target='blank' itemprop=\"sameAs\">10.1080\/00207217.2011.567035<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Mueller J.<\/span>, <span class=\"author\" itemprop=\"author\">Boescke TS.<\/span>, <span class=\"author\" itemprop=\"author\">Braeuhaus D.<\/span>, <span class=\"author\" itemprop=\"author\">Schroeder U.<\/span>, <span class=\"author\" itemprop=\"author\">Boettger U.<\/span>, <span class=\"author\" itemprop=\"author\">Sundqvist J.<\/span>, <span class=\"author\" itemprop=\"author\">Kuecher P.<\/span>, <span class=\"author\" itemprop=\"author\">Mikolajick T.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106843704?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applications<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106843704\"><span itemprop=\"name\"><strong>Applied Physics Letters<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_106843704\" \/><span itemprop=\"volumeNumber\">99<\/span><\/span>  (<span itemprop=\"datePublished\">2011<\/span>), Article No.: <span itemprop=\"pagination\">112901<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106843704\"><span itemprop=\"issn\">ISSN: 0003-6951<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1063\/1.3636417' target='blank' itemprop=\"sameAs\">10.1063\/1.3636417<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Murakami K.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Yanev V.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/201957437?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Current voltage characteristics through grains and grain boundaries of high-k dielectric thin films measured by tunneling atomic force microscopy<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">Frontiers of Characterization and Metrology for Nanoelectronics: 2011<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Grenoble<\/span><\/span><span itemprop=\"startDate\" content=\"2011\"><\/span>)<\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1063\/1.3657879' target='blank' itemprop=\"sameAs\">10.1063\/1.3657879<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Murakami K.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Yanev V.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer AJ.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/120319364?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">A highly sensitive evaluation method for the determination of different current conduction mechanisms through dielectric layers<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_120319364\"><span itemprop=\"name\"><strong>Journal of Applied Physics<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_120319364\" \/><span itemprop=\"volumeNumber\">110<\/span><\/span>  (<span itemprop=\"datePublished\">2011<\/span>), Article No.: <span itemprop=\"pagination\">054104<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_120319364\"><span itemprop=\"issn\">ISSN: 0021-8979<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1063\/1.3631088' target='blank' itemprop=\"sameAs\">10.1063\/1.3631088<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">M\u00fcller J.<\/span>, <span class=\"author\" itemprop=\"author\">Schr\u00f6der UP.<\/span>, <span class=\"author\" itemprop=\"author\">B\u00f6schke TS.<\/span>, <span class=\"author\" itemprop=\"author\">M\u00fcller I.<\/span>, <span class=\"author\" itemprop=\"author\">B\u00f6ttger U.<\/span>, <span class=\"author\" itemprop=\"author\">Wilde L.<\/span>, <span class=\"author\" itemprop=\"author\">Sundqvist J.<\/span>, <span class=\"author\" itemprop=\"author\">Lemberger M.<\/span>, <span class=\"author\" itemprop=\"author\">K\u00fccher P.<\/span>, <span class=\"author\" itemprop=\"author\">Mikolajick T.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/110326744?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Ferroelectricity in yttrium-doped hafnium oxide<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_110326744\"><span itemprop=\"name\"><strong>Journal of Applied Physics<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_110326744\" \/><span itemprop=\"volumeNumber\">110<\/span><\/span>  (<span itemprop=\"datePublished\">2011<\/span>), p. <span itemprop=\"pagination\">Article number 114113<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_110326744\"><span itemprop=\"issn\">ISSN: 0021-8979<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1063\/1.3667205' target='blank' itemprop=\"sameAs\">10.1063\/1.3667205<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Paskaleva A.<\/span>, <span class=\"author\" itemprop=\"author\">Lemberger M.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer AJ.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/110462264?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Implication of oxygen vacancies on current conduction mechanisms in TiN\/Zr1-xAlxO2\/TiN metal-insulator-metal structures<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_110462264\"><span itemprop=\"name\"><strong>Journal of Applied Physics<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_110462264\" \/><span itemprop=\"volumeNumber\">109<\/span><\/span>  (<span itemprop=\"datePublished\">2011<\/span>), Article No.: <span itemprop=\"pagination\">076101<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_110462264\"><span itemprop=\"issn\">ISSN: 0021-8979<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1063\/1.3565056' target='blank' itemprop=\"sameAs\">10.1063\/1.3565056<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Roll G.<\/span>, <span class=\"author\" itemprop=\"author\">Goldbach M.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106846784?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Leakage current and defect characterization of p+n-source\/drain diodes<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106846784\"><span itemprop=\"name\"><strong>Microelectronics Reliability<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_106846784\" \/><span itemprop=\"volumeNumber\">51<\/span><\/span>  (<span itemprop=\"datePublished\">2011<\/span>), p. <span itemprop=\"pagination\">2081-2085<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106846784\"><span itemprop=\"issn\">ISSN: 0026-2714<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.microrel.2011.05.015' target='blank' itemprop=\"sameAs\">10.1016\/j.microrel.2011.05.015<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Roll G.<\/span>, <span class=\"author\" itemprop=\"author\">Jakschik S.<\/span>, <span class=\"author\" itemprop=\"author\">Burenkov A.<\/span>, <span class=\"author\" itemprop=\"author\">Goldbach M.<\/span>, <span class=\"author\" itemprop=\"author\">Mikolajick T.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106845244?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Impact of carbon junction implant on leakage currents and defect distribution: Measurement and simulation<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106845244\"><span itemprop=\"name\"><strong>Solid-State Electronics<\/strong><\/span><\/span> (<span itemprop=\"datePublished\">2011<\/span>), p. <span itemprop=\"pagination\">170-176<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106845244\"><span itemprop=\"issn\">ISSN: 0038-1101<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.sse.2011.06.016' target='blank' itemprop=\"sameAs\">10.1016\/j.sse.2011.06.016<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Roll G.<\/span>, <span class=\"author\" itemprop=\"author\">Jakschik S.<\/span>, <span class=\"author\" itemprop=\"author\">Goldbach M.<\/span>, <span class=\"author\" itemprop=\"author\">Wachowiak A.<\/span>, <span class=\"author\" itemprop=\"author\">Mikolajick T.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/110449504?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Analysis of the effect of germanium preamorphization on interface defects and leakage current for high-k metal-oxide-semiconductor field-effect transistor<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_110449504\"><span itemprop=\"name\"><strong>Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_110449504\" \/><span itemprop=\"volumeNumber\">29<\/span><\/span>  (<span itemprop=\"datePublished\">2011<\/span>)<br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_110449504\"><span itemprop=\"issn\">ISSN: 0734-211X<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1116\/1.3521479' target='blank' itemprop=\"sameAs\">10.1116\/1.3521479<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/Book\"><span class=\"author\" itemprop=\"author\">Schmitt H.<\/span>, <span class=\"author\" itemprop=\"author\">Haeublein V.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106845464?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Influence of annealing parameters on surface roughness, mobility, and contact resistance of aluminium implanted 4H SiC<\/a><\/strong><\/span><br \/><span itemprop=\"datePublished\">2011<\/span><br \/><span itemprop=\"isbn\">ISBN: 9783037850794<\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4028\/www.scientific.net\/MSF.679-680.417' target='blank' itemprop=\"sameAs\">10.4028\/www.scientific.net\/MSF.679-680.417<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Schneider O.<\/span>, <span class=\"author\" itemprop=\"author\">Epple P.<\/span>, <span class=\"author\" itemprop=\"author\">Teuber E.<\/span>, <span class=\"author\" itemprop=\"author\">Meyer B.<\/span>, <span class=\"author\" itemprop=\"author\">Jank MPM.<\/span>, <span class=\"author\" itemprop=\"author\">Rauh C.<\/span>, <span class=\"author\" itemprop=\"author\">Delgado A.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/213059833?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Jet printing of colloidal solutions - Numerical modeling and experimental verification of the influence of ink and surface parameters on droplet spreading<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_213059833\"><span itemprop=\"name\"><strong>Advanced Powder Technology<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_213059833\" \/><span itemprop=\"volumeNumber\">22<\/span><\/span>  (<span itemprop=\"datePublished\">2011<\/span>), p. <span itemprop=\"pagination\">266-270<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_213059833\"><span itemprop=\"issn\">ISSN: 0921-8831<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.apt.2011.02.003' target='blank' itemprop=\"sameAs\">10.1016\/j.apt.2011.02.003<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Walther S.<\/span>, <span class=\"author\" itemprop=\"author\">Polster S.<\/span>, <span class=\"author\" itemprop=\"author\">Jank MPM.<\/span>, <span class=\"author\" itemprop=\"author\">Thiem H.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/120022584?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Tuning of charge carrier density of ZnO nanoparticle films by oxygen plasma treatment<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_120022584\"><span itemprop=\"name\"><strong>Advanced Powder Technology<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_120022584\" \/><span itemprop=\"volumeNumber\">22<\/span><\/span>  (<span itemprop=\"datePublished\">2011<\/span>), p. <span itemprop=\"pagination\">253-256<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_120022584\"><span itemprop=\"issn\">ISSN: 0921-8831<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.apt.2011.01.012' target='blank' itemprop=\"sameAs\">10.1016\/j.apt.2011.01.012<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Walther S.<\/span>, <span class=\"author\" itemprop=\"author\">Polster S.<\/span>, <span class=\"author\" itemprop=\"author\">Meyer B.<\/span>, <span class=\"author\" itemprop=\"author\">Jank MPM.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106848324?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Properties of SiO2 and Si3 N4 as gate dielectrics for printed ZnO transistors<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106848324\"><span itemprop=\"name\"><strong>Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_106848324\" \/><span itemprop=\"volumeNumber\">29<\/span><\/span>  (<span itemprop=\"datePublished\">2011<\/span>)<br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106848324\"><span itemprop=\"issn\">ISSN: 2166-2754<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1116\/1.3524291' target='blank' itemprop=\"sameAs\">10.1116\/1.3524291<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Weis S.<\/span>, <span class=\"author\" itemprop=\"author\">K\u00f6rmer R.<\/span>, <span class=\"author\" itemprop=\"author\">Jank M.<\/span>, <span class=\"author\" itemprop=\"author\">Lemberger M.<\/span>, <span class=\"author\" itemprop=\"author\">Otto M.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>, <span class=\"author\" itemprop=\"author\">Peukert W.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/117420864?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Conduction Mechanisms and Environmental Sensitivity of Solution-Processed Silicon Nanoparticle Layers for Thin-Film Transistors<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_117420864\"><span itemprop=\"name\"><strong>Small<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_117420864\" \/><span itemprop=\"volumeNumber\">7<\/span><\/span>  (<span itemprop=\"datePublished\">2011<\/span>), p. <span itemprop=\"pagination\">2853-2857<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_117420864\"><span itemprop=\"issn\">ISSN: 1613-6829<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1002\/smll.201100703' target='blank' itemprop=\"sameAs\">10.1002\/smll.201100703<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Yanev V.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer AJ.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106365424?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Characterization of thickness variations of thin dielectric layers at the nanoscale using scanning capacitance microscopy<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106365424\"><span itemprop=\"name\"><strong>Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_106365424\" \/><span itemprop=\"volumeNumber\">29<\/span><\/span>  (<span itemprop=\"datePublished\">2011<\/span>)<br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106365424\"><span itemprop=\"issn\">ISSN: 0734-211X<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1116\/1.3532822' target='blank' itemprop=\"sameAs\">10.1116\/1.3532822<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">vom Dorp J.<\/span>, <span class=\"author\" itemprop=\"author\">Berberich SE.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/201960149?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Monolithic RC-snubber for power electronic applications<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">2011 IEEE 9th International Conference on Power Electronics and Drive Systems, PEDS 2011<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Singapore<\/span><\/span><span itemprop=\"startDate\" content=\"2011\"><\/span>)<\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/PEDS.2011.6147217' target='blank' itemprop=\"sameAs\">10.1109\/PEDS.2011.6147217<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">vom Dorp J.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer AJ.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106366084?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Dielectric layers suitable for high voltage integrated trench capacitors<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106366084\"><span itemprop=\"name\"><strong>Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_106366084\" \/><span itemprop=\"volumeNumber\">29<\/span><\/span>  (<span itemprop=\"datePublished\">2011<\/span>)<br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106366084\"><span itemprop=\"issn\">ISSN: 2166-2754<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1116\/1.3525283' target='blank' itemprop=\"sameAs\">10.1116\/1.3525283<\/a><\/li><\/ul><h3>2010<\/h3><ul class=\"cris-publications \" lang=\"en\"><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Baer E.<\/span>, <span class=\"author\" itemprop=\"author\">Kunder D.<\/span>, <span class=\"author\" itemprop=\"author\">Evanschitzky P.<\/span>, <span class=\"author\" itemprop=\"author\">Lorenz J.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/118385344?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Coupling of Equipment and Feature-Scale Profile Simulation for Dry-Etching of Polysilicon Gate Lines<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">Workshop<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Bologna<\/span><\/span><span itemprop=\"startDate\" content=\"2010\"><\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"name\" style=\"font-weight:bold\">Proceedings of SISPAD 2010<\/span> <span itemprop=\"datePublished\">2010<\/span><\/span><\/li><li itemscope itemtype=\"http:\/\/schema.org\/Book\"><span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Friedrichs P.<\/span>, <span class=\"author\" itemprop=\"author\">Krieger M.<\/span>, <span class=\"author\" itemprop=\"author\">Pensl G.<\/span>, <span class=\"author\" itemprop=\"author\">Rupp R.<\/span>, <span class=\"author\" itemprop=\"author\">Seyller T.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/118711384?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Silicon Carbide and Related Materials 2009 - Parts 1 and 2<\/a><\/strong><\/span><br \/><span itemprop=\"publisher\" itemscope itemtype=\"http:\/\/schema.org\/Organization\"><span class=\"city\" itemprop=\"address\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"addressLocality\">Stafa-Zuerich<\/span><\/span>: <span itemprop=\"name\">Trans Tech Publications<\/span><\/span>, <span itemprop=\"datePublished\">2010<\/span><br \/>(Materials Science Forum, Vol.645-648)<br \/><span itemprop=\"isbn\">ISBN: 0-87849-279-8<\/span><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Egelkraut S.<\/span>, <span class=\"author\" itemprop=\"author\">M\u00e4rz M.<\/span>, <span class=\"author\" itemprop=\"author\">Rauch M.<\/span>, <span class=\"author\" itemprop=\"author\">Schletz A.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/305150313?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">A Highly Integrated EMI Filter Using Polymer Bonded Soft Magnetics as Core Material<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">IEEE Applied Power Electronics Conference (APEC)<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Palm Springs<\/span><\/span><span itemprop=\"startDate\" content=\"2010\"><\/span>)<\/span><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Erdmann A.<\/span>, <span class=\"author\" itemprop=\"author\">F\u00fchner T.<\/span>, <span class=\"author\" itemprop=\"author\">Evanschitzky P.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/118348384?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Mask diffraction analysis and optimization for EUV masks<\/a><\/strong><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1117\/12.814119' target='blank' itemprop=\"sameAs\">10.1117\/12.814119<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer AJ.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106854704?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Reduced on resistance in LDMOS devices by integrating trench gates into planar technology<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106854704\"><span itemprop=\"name\"><strong>IEEE Electron Device Letters<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_106854704\" \/><span itemprop=\"volumeNumber\">31<\/span><\/span>  (<span itemprop=\"datePublished\">2010<\/span>), p. <span itemprop=\"pagination\">464-466<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106854704\"><span itemprop=\"issn\">ISSN: 0741-3106<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/LED.2010.2043049' target='blank' itemprop=\"sameAs\">10.1109\/LED.2010.2043049<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Fet A.<\/span>, <span class=\"author\" itemprop=\"author\">Haeublein V.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer AJ.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/213390905?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Effective work function tuning in high-\u03ba dielectric metal-oxide-semiconductor stacks by fluorine and lanthanide doping<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_213390905\"><span itemprop=\"name\"><strong>Applied Physics Letters<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_213390905\" \/><span itemprop=\"volumeNumber\">96<\/span><\/span>  (<span itemprop=\"datePublished\">2010<\/span>), Article No.: <span itemprop=\"pagination\">053506<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_213390905\"><span itemprop=\"issn\">ISSN: 0003-6951<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1063\/1.3303976' target='blank' itemprop=\"sameAs\">10.1063\/1.3303976<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Fet A.<\/span>, <span class=\"author\" itemprop=\"author\">Haeublein V.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer AJ.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/213086283?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Modeling of the effective work function instability in metal\/high-\u03ba dielectric stacks<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_213086283\"><span itemprop=\"name\"><strong>Journal of Applied Physics<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_213086283\" \/><span itemprop=\"volumeNumber\">107<\/span><\/span>  (<span itemprop=\"datePublished\">2010<\/span>), Article No.: <span itemprop=\"pagination\">124514<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_213086283\"><span itemprop=\"issn\">ISSN: 0021-8979<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1063\/1.3391280' target='blank' itemprop=\"sameAs\">10.1063\/1.3391280<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Hinz J.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer AJ.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/120023904?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Analysis of NbN thin film deposition by plasma-enhanced ALD for gate electrode application<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_120023904\"><span itemprop=\"name\"><strong>Semiconductor Science and Technology<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_120023904\" \/><span itemprop=\"volumeNumber\">25<\/span><\/span>  (<span itemprop=\"datePublished\">2010<\/span>)<br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_120023904\"><span itemprop=\"issn\">ISSN: 0268-1242<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1088\/0268-1242\/25\/7\/075009' target='blank' itemprop=\"sameAs\">10.1088\/0268-1242\/25\/7\/075009<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Hinz J.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer AJ.<\/span>, <span class=\"author\" itemprop=\"author\">Thiede T.<\/span>, <span class=\"author\" itemprop=\"author\">Fischer RA.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106852064?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Evaluation of NbN thin films grown by MOCVD and plasma-enhanced ALD for gate electrode application in high-k\/SiO2 gate stacks<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106852064\"><span itemprop=\"name\"><strong>Semiconductor Science and Technology<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_106852064\" \/><span itemprop=\"volumeNumber\">25<\/span><\/span>  (<span itemprop=\"datePublished\">2010<\/span>), Article No.: <span itemprop=\"pagination\">045009<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106852064\"><span itemprop=\"issn\">ISSN: 0268-1242<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1088\/0268-1242\/25\/4\/045009' target='blank' itemprop=\"sameAs\">10.1088\/0268-1242\/25\/4\/045009<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Jahn J.<\/span>, <span class=\"author\" itemprop=\"author\">Erdmann A.<\/span>, <span class=\"author\" itemprop=\"author\">F\u00fchner T.<\/span>, <span class=\"author\" itemprop=\"author\">Liu S.<\/span>, <span class=\"author\" itemprop=\"author\">Shao F.<\/span>, <span class=\"author\" itemprop=\"author\">Barenbaum A.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/121306504?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Topography-aware BARC optimization for double patterning<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">SPIE Advanced Lithography<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">San Jose<\/span><\/span>, <span itemprop=\"startDate\" content=\"2010-02-23\">23. February 2010<\/span> - <span itemprop=\"endDate\" content=\"2010-02-25\">25. February 2010<\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"name\" style=\"font-weight:bold\">Proceedings of the SPIE<\/span> <span itemprop=\"datePublished\">2010<\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1117\/12.846441' target='blank' itemprop=\"sameAs\">10.1117\/12.846441<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Jambreck JD.<\/span>, <span class=\"author\" itemprop=\"author\">Schmitt H.<\/span>, <span class=\"author\" itemprop=\"author\">Amon B.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer AJ.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106853164?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Fabrication of metallic SPM tips by combining UV nanoimprint lithography and focused ion beam processing<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106853164\"><span itemprop=\"name\"><strong>Microelectronic Engineering<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_106853164\" \/><span itemprop=\"volumeNumber\">87<\/span><\/span>  (<span itemprop=\"datePublished\">2010<\/span>), p. <span itemprop=\"pagination\">1123-1126<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106853164\"><span itemprop=\"issn\">ISSN: 0167-9317<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.mee.2009.11.040' target='blank' itemprop=\"sameAs\">10.1016\/j.mee.2009.11.040<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Kaiser RJ.<\/span>, <span class=\"author\" itemprop=\"author\">Koffel S.<\/span>, <span class=\"author\" itemprop=\"author\">Pichler P.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer AJ.<\/span>, <span class=\"author\" itemprop=\"author\">Amon B.<\/span>, <span class=\"author\" itemprop=\"author\">Claverie A.<\/span>, <span class=\"author\" itemprop=\"author\">Benassayag G.<\/span>, <span class=\"author\" itemprop=\"author\">Scheiblin P.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/120872224?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Honeycomb voids due to ion implantation in germanium<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_120872224\"><span itemprop=\"name\"><strong>Thin Solid Films<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_120872224\" \/><span itemprop=\"volumeNumber\">518<\/span><\/span>  (<span itemprop=\"datePublished\">2010<\/span>), p. <span itemprop=\"pagination\">2323-2325<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_120872224\"><span itemprop=\"issn\">ISSN: 0040-6090<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.tsf.2009.09.138' target='blank' itemprop=\"sameAs\">10.1016\/j.tsf.2009.09.138<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">K\u00f6rmer R.<\/span>, <span class=\"author\" itemprop=\"author\">Jank M.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>, <span class=\"author\" itemprop=\"author\">Schmid HJ.<\/span>, <span class=\"author\" itemprop=\"author\">Peukert W.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/107354764?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Aerosol synthesis of silicon nanoparticles with narrow size distribution-Part 1: Experimental investigations<\/a><\/strong><\/span><span aria-hidden=\"true\" tabindex=\"-1\" class=\"oa-icon\" title=\"Open-Access-Publikation\"><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_107354764\"><span itemprop=\"name\"><strong>Journal of Aerosol Science<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_107354764\" \/><span itemprop=\"volumeNumber\">41<\/span><\/span>  (<span itemprop=\"datePublished\">2010<\/span>), p. <span itemprop=\"pagination\">998--1007<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_107354764\"><span itemprop=\"issn\">ISSN: 0021-8502<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.jaerosci.2010.05.007' target='blank' itemprop=\"sameAs\">10.1016\/j.jaerosci.2010.05.007<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Laven J.<\/span>, <span class=\"author\" itemprop=\"author\">Job R.<\/span>, <span class=\"author\" itemprop=\"author\">Schulze HJ.<\/span>, <span class=\"author\" itemprop=\"author\">Niedernostheide FJ.<\/span>, <span class=\"author\" itemprop=\"author\">H\u00e4ublein V.<\/span>, <span class=\"author\" itemprop=\"author\">Schulze H.<\/span>, <span class=\"author\" itemprop=\"author\">Schustereder W.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/213089111?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">The Impact of Helium Co-Implantation on Hydrogen Induced Donor Profiles in Float Zone Silicon<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_213089111\"><span itemprop=\"name\"><strong>ECS Transactions<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_213089111\" \/><span itemprop=\"volumeNumber\">33<\/span><\/span>  (<span itemprop=\"datePublished\">2010<\/span>), p. <span itemprop=\"pagination\">51-62<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_213089111\"><span itemprop=\"issn\">ISSN: 1938-5862<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1149\/1.3485682' target='blank' itemprop=\"sameAs\">10.1149\/1.3485682<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/Book\"><span class=\"author\" itemprop=\"author\">Le-Huu M.<\/span>, <span class=\"author\" itemprop=\"author\">Schrey F.<\/span>, <span class=\"author\" itemprop=\"author\">Grieb M.<\/span>, <span class=\"author\" itemprop=\"author\">Schmitt H.<\/span>, <span class=\"author\" itemprop=\"author\">Haeublein V.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/120877064?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">NMOS logic circuits using 4H-SiC MOSFETs for high temperature applications<\/a><\/strong><\/span><br \/><span itemprop=\"publisher\" itemscope itemtype=\"http:\/\/schema.org\/Organization\"><span itemprop=\"name\">Trans Tech Publications Ltd<\/span><\/span>, <span itemprop=\"datePublished\">2010<\/span><br \/><span itemprop=\"isbn\">ISBN: 9780878492794<\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4028\/www.scientific.net\/MSF.645-648.1143' target='blank' itemprop=\"sameAs\">10.4028\/www.scientific.net\/MSF.645-648.1143<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Lorentz VR.<\/span>, <span class=\"author\" itemprop=\"author\">Berberich SEB.<\/span>, <span class=\"author\" itemprop=\"author\">M\u00e4rz M.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer AJ.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>, <span class=\"author\" itemprop=\"author\">Poure P.<\/span>, <span class=\"author\" itemprop=\"author\">Braun F.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/287318585?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Light-load efficiency increase in high-frequency integrated DC-DC converters by parallel dynamic width controlling<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_287318585\"><span itemprop=\"name\"><strong>Analog Integrated Circuits and Signal Processing<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_287318585\" \/><span itemprop=\"volumeNumber\">62<\/span><\/span>  (<span itemprop=\"datePublished\">2010<\/span>), p. <span itemprop=\"pagination\">1-8<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_287318585\"><span itemprop=\"issn\">ISSN: 0925-1030<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1007\/s10470-009-9323-9' target='blank' itemprop=\"sameAs\">10.1007\/s10470-009-9323-9<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Pichler P.<\/span>, <span class=\"author\" itemprop=\"author\">Burenkov A.<\/span>, <span class=\"author\" itemprop=\"author\">Lorenz J.<\/span>, <span class=\"author\" itemprop=\"author\">Kampen C.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/120870684?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Future challenges in CMOS process modeling<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_120870684\"><span itemprop=\"name\"><strong>Thin Solid Films<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_120870684\" \/><span itemprop=\"volumeNumber\">518<\/span><\/span>  (<span itemprop=\"datePublished\">2010<\/span>), p. <span itemprop=\"pagination\">2478-2484<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_120870684\"><span itemprop=\"issn\">ISSN: 0040-6090<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.tsf.2009.09.150' target='blank' itemprop=\"sameAs\">10.1016\/j.tsf.2009.09.150<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Jambreck JD.<\/span>, <span class=\"author\" itemprop=\"author\">Ebm C.<\/span>, <span class=\"author\" itemprop=\"author\">Platzgummer E.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer AJ.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106853824?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Influence of FIB patterning strategies on the shape of 3D structures: Comparison of experiments with simulations<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106853824\"><span itemprop=\"name\"><strong>Microelectronic Engineering<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_106853824\" \/><span itemprop=\"volumeNumber\">87<\/span><\/span>  (<span itemprop=\"datePublished\">2010<\/span>), p. <span itemprop=\"pagination\">1566-1568<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106853824\"><span itemprop=\"issn\">ISSN: 0167-9317<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.mee.2009.10.054' target='blank' itemprop=\"sameAs\">10.1016\/j.mee.2009.10.054<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Spoldi G.<\/span>, <span class=\"author\" itemprop=\"author\">Yanev V.<\/span>, <span class=\"author\" itemprop=\"author\">Beuer S.<\/span>, <span class=\"author\" itemprop=\"author\">Amon B.<\/span>, <span class=\"author\" itemprop=\"author\">Jambreck J.<\/span>, <span class=\"author\" itemprop=\"author\">Petersen S.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer AJ.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106849424?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Comprehensive study of focused ion beam induced lateral damage in silicon by scanning probe microscopy techniques<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106849424\"><span itemprop=\"name\"><strong>Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_106849424\" \/><span itemprop=\"volumeNumber\">28<\/span><\/span>  (<span itemprop=\"datePublished\">2010<\/span>), p. <span itemprop=\"pagination\">595-607<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106849424\"><span itemprop=\"issn\">ISSN: 0734-211X<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1116\/1.3431085' target='blank' itemprop=\"sameAs\">10.1116\/1.3431085<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Schmitt H.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Bich A.<\/span>, <span class=\"author\" itemprop=\"author\">Eisner M.<\/span>, <span class=\"author\" itemprop=\"author\">Voelkel R.<\/span>, <span class=\"author\" itemprop=\"author\">Hornung M.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/124174424?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Full wafer microlens replication by UV imprint lithography<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_124174424\"><span itemprop=\"name\"><strong>Microelectronic Engineering<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_124174424\" \/><span itemprop=\"volumeNumber\">87<\/span><\/span>  (<span itemprop=\"datePublished\">2010<\/span>), p. <span itemprop=\"pagination\">1074--1076<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_124174424\"><span itemprop=\"issn\">ISSN: 0167-9317<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.mee.2009.11.069' target='blank' itemprop=\"sameAs\">10.1016\/j.mee.2009.11.069<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Walther S.<\/span>, <span class=\"author\" itemprop=\"author\">Sch\u00e4fer S.<\/span>, <span class=\"author\" itemprop=\"author\">Jank MPM.<\/span>, <span class=\"author\" itemprop=\"author\">Thiem H.<\/span>, <span class=\"author\" itemprop=\"author\">Peukert W.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106853384?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Influence of annealing temperature and measurement ambient on TFTs based on gas phase synthesized ZnO nanoparticles<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106853384\"><span itemprop=\"name\"><strong>Microelectronic Engineering<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_106853384\" \/><span itemprop=\"volumeNumber\">87<\/span><\/span>  (<span itemprop=\"datePublished\">2010<\/span>), p. <span itemprop=\"pagination\">2312-2316<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106853384\"><span itemprop=\"issn\">ISSN: 0167-9317<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.mee.2010.03.009' target='blank' itemprop=\"sameAs\">10.1016\/j.mee.2010.03.009<\/a><\/li><\/ul><h3>2009<\/h3><ul class=\"cris-publications \" lang=\"en\"><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Egelkraut S.<\/span>, <span class=\"author\" itemprop=\"author\">Rauch M.<\/span>, <span class=\"author\" itemprop=\"author\">Schletz A.<\/span>, <span class=\"author\" itemprop=\"author\">Gardocki A.<\/span>, <span class=\"author\" itemprop=\"author\">M\u00e4rz M.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/305149271?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Polymer bonded soft magnetics for EMI filter applications<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">3rd Int. Conference on Automotive Power Electronics (APE)<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Paris<\/span><\/span>, <span itemprop=\"startDate\" content=\"2009-03-25\">25. March 2009<\/span> - <span itemprop=\"endDate\" content=\"2009-03-26\">26. March 2009<\/span>)<\/span><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Erdmann A.<\/span>, <span class=\"author\" itemprop=\"author\">Fuhrmann J.<\/span>, <span class=\"author\" itemprop=\"author\">Fiebach A.<\/span>, <span class=\"author\" itemprop=\"author\">Uhle M.<\/span>, <span class=\"author\" itemprop=\"author\">Szmanda C.<\/span>, <span class=\"author\" itemprop=\"author\">Truong C.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/118506344?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">A model of self-limiting residual acid diffusion for pattern doubling<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_118506344\"><span itemprop=\"name\"><strong>Microelectronic Engineering<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_118506344\" \/><span itemprop=\"volumeNumber\">86<\/span><\/span>  (<span itemprop=\"datePublished\">2009<\/span>), p. <span itemprop=\"pagination\">792<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_118506344\"><span itemprop=\"issn\">ISSN: 0167-9317<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.mee.2008.10.023' target='blank' itemprop=\"sameAs\">10.1016\/j.mee.2008.10.023<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Erdmann A.<\/span>, <span class=\"author\" itemprop=\"author\">Pflaum C.<\/span>, <span class=\"author\" itemprop=\"author\">Rahimi Z.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/120542884?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Finite integration (FI) method for modeling optical wavers in lithography masks<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">7th International Fraunhofer IISB Lithography Simulation Workshop<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Hersbruck<\/span><\/span><span itemprop=\"startDate\" content=\"2009\"><\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"name\" style=\"font-weight:bold\">7th International Fraunhofer IISB Lithography Simulation Workshop<\/span> <span itemprop=\"datePublished\">2009<\/span><\/span><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Fet A.<\/span>, <span class=\"author\" itemprop=\"author\">Haeublein V.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer AJ.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106865044?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Lanthanum implantation for threshold voltage control in metal\/high-k devices<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106865044\"><span itemprop=\"name\"><strong>Microelectronic Engineering<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_106865044\" \/><span itemprop=\"volumeNumber\">86<\/span><\/span>  (<span itemprop=\"datePublished\">2009<\/span>), p. <span itemprop=\"pagination\">1782-1785<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106865044\"><span itemprop=\"issn\">ISSN: 0167-9317<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.mee.2009.03.042' target='blank' itemprop=\"sameAs\">10.1016\/j.mee.2009.03.042<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Motzek K.<\/span>, <span class=\"author\" itemprop=\"author\">Bich A.<\/span>, <span class=\"author\" itemprop=\"author\">Erdmann A.<\/span>, <span class=\"author\" itemprop=\"author\">Hornung M.<\/span>, <span class=\"author\" itemprop=\"author\">Hennemeyer M.<\/span>, <span class=\"author\" itemprop=\"author\">Meliorisz PB.<\/span>, <span class=\"author\" itemprop=\"author\">Hofmann U.<\/span>, <span class=\"author\" itemprop=\"author\">\u00dcnal N.<\/span>, <span class=\"author\" itemprop=\"author\">Voelkel R.<\/span>, <span class=\"author\" itemprop=\"author\">Partel S.<\/span>, <span class=\"author\" itemprop=\"author\">Hudek P.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/110995544?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Optimization of illumination pupils and mask features for proximity printing<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">Micro- and Nano-Engineering<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Ghent, Belgium<\/span><\/span><span itemprop=\"startDate\" content=\"2009\"><\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"name\" style=\"font-weight:bold\">Micro- and Nano-Engineering<\/span> <span itemprop=\"datePublished\">2009<\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.mee.2009.10.038' target='blank' itemprop=\"sameAs\">10.1016\/j.mee.2009.10.038<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Mueller J.<\/span>, <span class=\"author\" itemprop=\"author\">Boescke TS.<\/span>, <span class=\"author\" itemprop=\"author\">Schroeder U.<\/span>, <span class=\"author\" itemprop=\"author\">Reinicke M.<\/span>, <span class=\"author\" itemprop=\"author\">Oberbeck L.<\/span>, <span class=\"author\" itemprop=\"author\">Zhou D.<\/span>, <span class=\"author\" itemprop=\"author\">Weinreich W.<\/span>, <span class=\"author\" itemprop=\"author\">Kuecher P.<\/span>, <span class=\"author\" itemprop=\"author\">Lemberger M.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106398644?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Improved manufacturability of ZrO2 MIM capacitors by process stabilizing HfO2 addition<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106398644\"><span itemprop=\"name\"><strong>Microelectronic Engineering<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_106398644\" \/><span itemprop=\"volumeNumber\">86<\/span><\/span>  (<span itemprop=\"datePublished\">2009<\/span>), p. <span itemprop=\"pagination\">1818-1821<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106398644\"><span itemprop=\"issn\">ISSN: 0167-9317<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.mee.2009.03.076' target='blank' itemprop=\"sameAs\">10.1016\/j.mee.2009.03.076<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Patsis GP.<\/span>, <span class=\"author\" itemprop=\"author\">Drygiannakis D.<\/span>, <span class=\"author\" itemprop=\"author\">Raptis T.<\/span>, <span class=\"author\" itemprop=\"author\">Gogoliddes E.<\/span>, <span class=\"author\" itemprop=\"author\">Erdmann A.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/118338924?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Advanced lithography models for strict process control in the 32nm technology node<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_118338924\"><span itemprop=\"name\"><strong>Microelectronic Engineering<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_118338924\" \/><span itemprop=\"volumeNumber\">86<\/span><\/span>  (<span itemprop=\"datePublished\">2009<\/span>), p. <span itemprop=\"pagination\">513<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_118338924\"><span itemprop=\"issn\">ISSN: 0167-9317<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.mee.2009.01.050' target='blank' itemprop=\"sameAs\">10.1016\/j.mee.2009.01.050<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Reibold D.<\/span>, <span class=\"author\" itemprop=\"author\">Shao F.<\/span>, <span class=\"author\" itemprop=\"author\">Erdmann A.<\/span>, <span class=\"author\" itemprop=\"author\">Peschel U.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/118347944?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Extraordinary low transmission effects for ultra-thin patterned metal films<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_118347944\"><span itemprop=\"name\"><strong>Optics Express<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_118347944\" \/><span itemprop=\"volumeNumber\">17<\/span><\/span>  (<span itemprop=\"datePublished\">2009<\/span>), p. <span itemprop=\"pagination\">544<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_118347944\"><span itemprop=\"issn\">ISSN: 1094-4087<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1364\/OE.17.000544' target='blank' itemprop=\"sameAs\">10.1364\/OE.17.000544<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Shao F.<\/span>, <span class=\"author\" itemprop=\"author\">Evanschitzky P.<\/span>, <span class=\"author\" itemprop=\"author\">F\u00fchner T.<\/span>, <span class=\"author\" itemprop=\"author\">Erdmann A.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/118405804?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Efficient Analysis of Three Dimensional EUV Mask Induced Imageing Artifacts Using the Waveguide Decomposition Method<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">BACUS<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Monterey<\/span><\/span><span itemprop=\"startDate\" content=\"2009\"><\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"name\" style=\"font-weight:bold\">BACUS<\/span> <span itemprop=\"datePublished\">2009<\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1117\/12.833464' target='blank' itemprop=\"sameAs\">10.1117\/12.833464<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Shao F.<\/span>, <span class=\"author\" itemprop=\"author\">Evanschitzky P.<\/span>, <span class=\"author\" itemprop=\"author\">F\u00fchner T.<\/span>, <span class=\"author\" itemprop=\"author\">Erdmann A.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/118348604?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Rigorous diffraction simulations of topographic wafer stacks in double patterning<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_118348604\"><span itemprop=\"name\"><strong>Microelectronic Engineering<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_118348604\" \/><span itemprop=\"volumeNumber\">86<\/span><\/span>  (<span itemprop=\"datePublished\">2009<\/span>), p. <span itemprop=\"pagination\">289<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_118348604\"><span itemprop=\"issn\">ISSN: 0167-9317<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.mee.2008.11.078' target='blank' itemprop=\"sameAs\">10.1016\/j.mee.2008.11.078<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Straue N.<\/span>, <span class=\"author\" itemprop=\"author\">Rauscher M.<\/span>, <span class=\"author\" itemprop=\"author\">Walther S.<\/span>, <span class=\"author\" itemprop=\"author\">Faber H.<\/span>, <span class=\"author\" itemprop=\"author\">Roosen A.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/107970104?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Preparation and soft lithographic printing of nano-sized ITO-dispersions for the manufacture of electrodes for TFTs<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_107970104\"><span itemprop=\"name\"><strong>Journal of Materials Science<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_107970104\" \/><span itemprop=\"volumeNumber\">44<\/span><\/span>  (<span itemprop=\"datePublished\">2009<\/span>), p. <span itemprop=\"pagination\">6011 - 6019<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_107970104\"><span itemprop=\"issn\">ISSN: 0022-2461<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1007\/s10853-009-3804-1' target='blank' itemprop=\"sameAs\">10.1007\/s10853-009-3804-1<\/a><br \/>URL: <a href='http:\/\/link.springer.com\/article\/10.1007%2Fs10853-009-3804-1' target='blank' itemprop=\"url\">http:\/\/link.springer.com\/article\/10.1007%2Fs10853-009-3804-1<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Yanev V.<\/span>, <span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer AJ.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106864824?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Comparative study between conventional macroscopic IV techniques and advanced AFM based methods for electrical characterization of dielectrics at the nanoscale<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106864824\"><span itemprop=\"name\"><strong>Microelectronic Engineering<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_106864824\" \/><span itemprop=\"volumeNumber\">86<\/span><\/span>  (<span itemprop=\"datePublished\">2009<\/span>), p. <span itemprop=\"pagination\">1911-1914<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106864824\"><span itemprop=\"issn\">ISSN: 0167-9317<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.mee.2009.03.094' target='blank' itemprop=\"sameAs\">10.1016\/j.mee.2009.03.094<\/a><\/li><\/ul><h3>2008<\/h3><ul class=\"cris-publications \" lang=\"en\"><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Egelkraut S.<\/span>, <span class=\"author\" itemprop=\"author\">M\u00e4rz M.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/305147319?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Polymer bonded soft magnetic particles for planar inductive devices<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">5th International Conference on Integrated Power Systems (CIPS)<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">N\u00fcrnberg<\/span><\/span><span itemprop=\"startDate\" content=\"2008\"><\/span>)<\/span><br \/>URL: <a href='https:\/\/ieeexplore.ieee.org\/document\/5755689?arnumber=5755689' target='blank' itemprop=\"url\">https:\/\/ieeexplore.ieee.org\/document\/5755689?arnumber=5755689<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Erlbacher T.<\/span>, <span class=\"author\" itemprop=\"author\">Jank M.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Engl R.<\/span>, <span class=\"author\" itemprop=\"author\">Walter A.<\/span>, <span class=\"author\" itemprop=\"author\">Sezi R.<\/span>, <span class=\"author\" itemprop=\"author\">Dehm C.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106857784?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Self-aligned growth of organometallic layers for nonvolatile memories: Comparison of liquid-phase and vapor-phase deposition<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106857784\"><span itemprop=\"name\"><strong>Journal of The Electrochemical Society<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_106857784\" \/><span itemprop=\"volumeNumber\">155<\/span><\/span>  (<span itemprop=\"datePublished\">2008<\/span>), p. <span itemprop=\"pagination\">H693-H697<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106857784\"><span itemprop=\"issn\">ISSN: 0013-4651<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1149\/1.2957907' target='blank' itemprop=\"sameAs\">10.1149\/1.2957907<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Martinez Limia A.<\/span>, <span class=\"author\" itemprop=\"author\">Pichler P.<\/span>, <span class=\"author\" itemprop=\"author\">Steen C.<\/span>, <span class=\"author\" itemprop=\"author\">Paul S.<\/span>, <span class=\"author\" itemprop=\"author\">Lerch W.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/110336864?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Modeling of the Diffusion and Activation of Arsenic in Silicon Including Clustering and Precipitation<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">Gettering and Defect Engineering in Semiconductor Technology XII<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Italien<\/span><\/span>, <span itemprop=\"startDate\" content=\"2007-10-14\">14. October 2007<\/span> - <span itemprop=\"endDate\" content=\"2007-10-19\">19. October 2007<\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"name\" style=\"font-weight:bold\">Gettering and Defect Engineering in Semiconductor Technology XII<\/span> <span itemprop=\"datePublished\">2008<\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4028\/www.scientific.net\/SSP.131-133.277' target='blank' itemprop=\"sameAs\">10.4028\/www.scientific.net\/SSP.131-133.277<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Pei L.<\/span>, <span class=\"author\" itemprop=\"author\">Duscher G.<\/span>, <span class=\"author\" itemprop=\"author\">Steen C.<\/span>, <span class=\"author\" itemprop=\"author\">Pichler P.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>, <span class=\"author\" itemprop=\"author\">Napolitani E.<\/span>, <span class=\"author\" itemprop=\"author\">De Salvador D.<\/span>, <span class=\"author\" itemprop=\"author\">Piro AM.<\/span>, <span class=\"author\" itemprop=\"author\">Terrasi AT.<\/span>, <span class=\"author\" itemprop=\"author\">Severac F.<\/span>, <span class=\"author\" itemprop=\"author\">Cristiano F.<\/span>, <span class=\"author\" itemprop=\"author\">Ravichandran K.<\/span>, <span class=\"author\" itemprop=\"author\">Gupta N.<\/span>, <span class=\"author\" itemprop=\"author\">Windl W.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/118346624?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Detailed arsenic concentration profiles at Si\/SiO2 interfaces<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_118346624\"><span itemprop=\"name\"><strong>Journal of Applied Physics<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_118346624\" \/><span itemprop=\"volumeNumber\">104<\/span><\/span>  (<span itemprop=\"datePublished\">2008<\/span>), Article No.: <span itemprop=\"pagination\">043507<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_118346624\"><span itemprop=\"issn\">ISSN: 0021-8979<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1063\/1.2967713' target='blank' itemprop=\"sameAs\">10.1063\/1.2967713<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/118517784?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Detailed Carrier Lifetime Analysis of Iron-Contaminated Boron-doped Silicon by Comparison of Simulation and Measurement<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_118517784\"><span itemprop=\"name\"><strong>Journal of The Electrochemical Society<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_118517784\" \/><span itemprop=\"volumeNumber\">155<\/span><\/span>  (<span itemprop=\"datePublished\">2008<\/span>), p. <span itemprop=\"pagination\">H117<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_118517784\"><span itemprop=\"issn\">ISSN: 0013-4651<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1149\/1.2819628' target='blank' itemprop=\"sameAs\">10.1149\/1.2819628<\/a><\/li><\/ul><h3>2007<\/h3><ul class=\"cris-publications \" lang=\"en\"><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Christoph D.<\/span>, <span class=\"author\" itemprop=\"author\">F\u00fchner T.<\/span>, <span class=\"author\" itemprop=\"author\">Tollk\u00fchn B.<\/span>, <span class=\"author\" itemprop=\"author\">Erdmann A.<\/span>, <span class=\"author\" itemprop=\"author\">K\u00f3kai G.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/122722864?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Application of a memetic algorithm to the calibration of micro-lithography<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"author\">Grosan, Crina; Abraham, Ajith (ed.): <\/span><span itemprop=\"name\"><strong>Hybrid Evolutionary Algorithms<\/strong><\/span>, <span itemprop=\"publisher\" itemscope itemtype=\"http:\/\/schema.org\/Organization\"><span class=\"city\" itemprop=\"address\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"addressLocality\">Berlin Heidelberg<\/span><\/span>: <span itemprop=\"name\">Springer<\/span><\/span>, <span itemprop=\"datePublished\">2007<\/span>, p. <span itemprop=\"pagination\">201-239<\/span><br \/><span itemprop=\"isbn\">ISBN: 978-3-540-73296-9<\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1007\/978-3-540-73297-6' target='blank' itemprop=\"sameAs\">10.1007\/978-3-540-73297-6<\/a><\/span><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Krieger M.<\/span>, <span class=\"author\" itemprop=\"author\">Semmelroth K.<\/span>, <span class=\"author\" itemprop=\"author\">Weber HB.<\/span>, <span class=\"author\" itemprop=\"author\">Pensl G.<\/span>, <span class=\"author\" itemprop=\"author\">Rambach M.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106362564?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Impurity Conduction in Silicon Carbide<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106362564\"><span itemprop=\"name\"><strong>Materials Science Forum<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_106362564\" \/><span itemprop=\"volumeNumber\">556-557<\/span><\/span>  (<span itemprop=\"datePublished\">2007<\/span>), p. <span itemprop=\"pagination\">364<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106362564\"><span itemprop=\"issn\">ISSN: 0255-5476<\/span><\/span><\/span><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Lemberger M.<\/span>, <span class=\"author\" itemprop=\"author\">Sch\u00f6n F.<\/span>, <span class=\"author\" itemprop=\"author\">Dirnecker T.<\/span>, <span class=\"author\" itemprop=\"author\">Jank M.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>, <span class=\"author\" itemprop=\"author\">Paskaleva A.<\/span>, <span class=\"author\" itemprop=\"author\">Z\u00fcrcher S.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/111409364?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">MOCVD of Hafnium Silicate Films Obtained from a Single-Source Precusor on Silicon and Germanium for Gate-Dielectric Applications<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_111409364\"><span itemprop=\"name\"><strong>Chemical Vapor Deposition<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_111409364\" \/><span itemprop=\"volumeNumber\">13<\/span><\/span>  (<span itemprop=\"datePublished\">2007<\/span>), p. <span itemprop=\"pagination\">105-111<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_111409364\"><span itemprop=\"issn\">ISSN: 0948-1907<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1002\/cvde.200606511' target='blank' itemprop=\"sameAs\">10.1002\/cvde.200606511<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Schmitt H.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>, <span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Lehrer C.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/110522104?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">UV nanoimprint materials: Surface energies, residual layers, and imprint quality<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_110522104\"><span itemprop=\"name\"><strong>Journal of Vacuum Science & Technology B<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_110522104\" \/><span itemprop=\"volumeNumber\">25<\/span><\/span>  (<span itemprop=\"datePublished\">2007<\/span>), p. <span itemprop=\"pagination\">785-790<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_110522104\"><span itemprop=\"issn\">ISSN: 1071-1023<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1116\/1.2732742' target='blank' itemprop=\"sameAs\">10.1116\/1.2732742<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Wellmann P.<\/span>, <span class=\"author\" itemprop=\"author\">Karl U.<\/span>, <span class=\"author\" itemprop=\"author\">Kleber S.<\/span>, <span class=\"author\" itemprop=\"author\">Schmitt H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/117598844?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Cathodoluminescence characterization of organic semiconductor materials for light emitting device applications<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_117598844\"><span itemprop=\"name\"><strong>Journal of Applied Physics<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_117598844\" \/><span itemprop=\"volumeNumber\">101<\/span><\/span>  (<span itemprop=\"datePublished\">2007<\/span>)<br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_117598844\"><span itemprop=\"issn\">ISSN: 0021-8979<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1063\/1.2743090' target='blank' itemprop=\"sameAs\">10.1063\/1.2743090<\/a><\/li><\/ul><h3>2006<\/h3><ul class=\"cris-publications \" lang=\"en\"><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\">S.E. Berberich, M. Marz, A.J. Bauer, S.K. Beuer, H. Ryssel:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/287733873?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Active Fuse<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">2006 IEEE International Symposium on Power Semiconductor Devices and IC's<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Naples<\/span><\/span>, <span itemprop=\"startDate\" content=\"2006-06-04\">4. June 2006<\/span> - <span itemprop=\"endDate\" content=\"2006-06-08\">8. June 2006<\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"name\" style=\"font-weight:bold\">Symposium on Power Semiconductor Devices and IC's<\/span> <span itemprop=\"datePublished\">2006<\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/ISPSD.2006.1666088' target='blank' itemprop=\"sameAs\">10.1109\/ISPSD.2006.1666088<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/Book\"><span class=\"author\" itemprop=\"author\">Dirnecker T.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/120954064?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Untersuchung von Aufladungseffekten bei der Ionenimplantation<\/a><\/strong><\/span><br \/><span itemprop=\"publisher\" itemscope itemtype=\"http:\/\/schema.org\/Organization\"><span class=\"city\" itemprop=\"address\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"addressLocality\">Aachen<\/span><\/span>: <span itemprop=\"name\">Shaker Verlag<\/span><\/span>, <span itemprop=\"datePublished\">2006<\/span><br \/>(Erlanger Berichte Mikroelektronik)<br \/><span itemprop=\"isbn\">ISBN: 3-8322-5081-6<\/span><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Ghicov A.<\/span>, <span class=\"author\" itemprop=\"author\">Mac\u00e1k J.<\/span>, <span class=\"author\" itemprop=\"author\">Tsuchiya H.<\/span>, <span class=\"author\" itemprop=\"author\">Kunze J.<\/span>, <span class=\"author\" itemprop=\"author\">H\u00e4ublein V.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Schmuki P.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/215830470?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Ion implantation and annealing for an efficient N-doping of TiO2 nanotubes<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_215830470\"><span itemprop=\"name\"><strong>Nano Letters<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_215830470\" \/><span itemprop=\"volumeNumber\">6<\/span><\/span>  (<span itemprop=\"datePublished\">2006<\/span>), p. <span itemprop=\"pagination\">1080-1082<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_215830470\"><span itemprop=\"issn\">ISSN: 1530-6984<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1021\/nl0600979' target='blank' itemprop=\"sameAs\">10.1021\/nl0600979<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">H\u00e4ublein V.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/215831182?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">The impact of mass resolution on molybdenum contamination for B, P, BF 2, and As implantations<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">ION IMPLANTATION TECHNOLOGY: 16th International Conference on Ion Implantation Technology, IIT 2006<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Marseille<\/span><\/span><span itemprop=\"startDate\" content=\"2006\"><\/span>)<\/span><br \/>URL: <a href='https:\/\/www.scopus.com\/record\/display.uri?eid=2-s2.0-33846941211&origin=inward' target='blank' itemprop=\"url\">https:\/\/www.scopus.com\/record\/display.uri?eid=2-s2.0-33846941211&origin=inward<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Jank M.<\/span>, <span class=\"author\" itemprop=\"author\">Kandziora C.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/117408324?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Well Design in a Bulk CMOS Technology with Low Mask Count<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">2006 16th International Conference on Ion Implantation Technology<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Marseille<\/span><\/span>, <span itemprop=\"startDate\" content=\"2006-06-11\">11. June 2006<\/span> - <span itemprop=\"endDate\" content=\"2006-11-16\">16. November 2006<\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"name\" style=\"font-weight:bold\">AIP Conference Proceedings Volume 866, Issue 1<\/span> <span itemprop=\"datePublished\">2006<\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1063\/1.2401476' target='blank' itemprop=\"sameAs\">10.1063\/1.2401476<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Lugstein A.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Bertagnolli E.<\/span>, <span class=\"author\" itemprop=\"author\">Platzgummer E.<\/span>, <span class=\"author\" itemprop=\"author\">Biedermann A.<\/span>, <span class=\"author\" itemprop=\"author\">Langfischer H.<\/span>, <span class=\"author\" itemprop=\"author\">Eder-Kapl S.<\/span>, <span class=\"author\" itemprop=\"author\">Kuemmel M.<\/span>, <span class=\"author\" itemprop=\"author\">Cernusca S.<\/span>, <span class=\"author\" itemprop=\"author\">Loeschner H.<\/span>, <span class=\"author\" itemprop=\"author\">Lehrer C.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/215830823?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Simulation of ion beam direct structuring for 3D nanoimprint template fabrication<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_215830823\"><span itemprop=\"name\"><strong>Microelectronic Engineering<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_215830823\" \/><span itemprop=\"volumeNumber\">83<\/span><\/span>  (<span itemprop=\"datePublished\">2006<\/span>), p. <span itemprop=\"pagination\">936-939<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_215830823\"><span itemprop=\"issn\">ISSN: 0167-9317<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.mee.2006.01.140' target='blank' itemprop=\"sameAs\">10.1016\/j.mee.2006.01.140<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Oechsner R.<\/span>, <span class=\"author\" itemprop=\"author\">Pfeffer M.<\/span>, <span class=\"author\" itemprop=\"author\">Pfitzner L.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>, <span class=\"author\" itemprop=\"author\">Beer K.<\/span>, <span class=\"author\" itemprop=\"author\">Boldin M.<\/span>, <span class=\"author\" itemprop=\"author\">de Mey B.<\/span>, <span class=\"author\" itemprop=\"author\">Engelhard M.<\/span>, <span class=\"author\" itemprop=\"author\">O'Murchu C.<\/span>, <span class=\"author\" itemprop=\"author\">Ditmar J.<\/span>, <span class=\"author\" itemprop=\"author\">Colson P.<\/span>, <span class=\"author\" itemprop=\"author\">Madore M.<\/span>, <span class=\"author\" itemprop=\"author\">Krahn L.<\/span>, <span class=\"author\" itemprop=\"author\">Kempe W.<\/span>, <span class=\"author\" itemprop=\"author\">Luisman E.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/118384024?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Creation of E-Learning Content for Microelectronics Manufacturing<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">12th IFAC Symposium on Information Control Problems in Manufacturing<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Saint-Etienne, France<\/span><\/span>, <span itemprop=\"startDate\" content=\"2006-05-17\">17. May 2006<\/span> - <span itemprop=\"endDate\" content=\"2006-05-19\">19. May 2006<\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"name\" style=\"font-weight:bold\">Proceeding of the 12th IFAC Symposium on Information Control Problems in Manufacturing<\/span> <span itemprop=\"datePublished\">2006<\/span><\/span><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Peto G.<\/span>, <span class=\"author\" itemprop=\"author\">Khanh N.<\/span>, <span class=\"author\" itemprop=\"author\">Horvath Z.<\/span>, <span class=\"author\" itemprop=\"author\">Molnar G.<\/span>, <span class=\"author\" itemprop=\"author\">Gyulai J.<\/span>, <span class=\"author\" itemprop=\"author\">Kotai E.<\/span>, <span class=\"author\" itemprop=\"author\">Guczi L.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/120884984?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Nanoscale morphology and photoemission of arsenic implanted germanium films<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_120884984\"><span itemprop=\"name\"><strong>Journal of Applied Physics<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_120884984\" \/><span itemprop=\"volumeNumber\">99<\/span><\/span>  (<span itemprop=\"datePublished\">2006<\/span>)<br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_120884984\"><span itemprop=\"issn\">ISSN: 0021-8979<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1063\/1.2190717' target='blank' itemprop=\"sameAs\">10.1063\/1.2190717<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/Book\"><span class=\"author\" itemprop=\"author\">Rambach M.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/215830151?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Extracting activation and compensation ratio from aluminum implanted 4H-SiC by modeling of resistivity measurements<\/a><\/strong><\/span><br \/><span itemprop=\"datePublished\">2006<\/span><br \/><span itemprop=\"isbn\">ISBN: 9780878494255<\/span><br \/>URL: <a href='https:\/\/www.scopus.com\/record\/display.uri?eid=2-s2.0-37849042244&origin=inward' target='blank' itemprop=\"url\">https:\/\/www.scopus.com\/record\/display.uri?eid=2-s2.0-37849042244&origin=inward<\/a><\/li><\/ul><h3>2005<\/h3><ul class=\"cris-publications \" lang=\"en\"><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Paskaleva A.<\/span>, <span class=\"author\" itemprop=\"author\">Lemberger M.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/215726035?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Thin HfxTiySixO films with varying Hf to Ti contents as candidates for high-k dielectrics<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">207th ECS Meeting<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Quebec<\/span><\/span><span itemprop=\"startDate\" content=\"2005\"><\/span>)<\/span><br \/>URL: <a href='https:\/\/www.scopus.com\/record\/display.uri?eid=2-s2.0-31844445401&origin=inward' target='blank' itemprop=\"url\">https:\/\/www.scopus.com\/record\/display.uri?eid=2-s2.0-31844445401&origin=inward<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Berberich SE.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/215726301?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Triple trench gate IGBTs<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">17th International Symposium on Power Semiconductor Devices and ICs, ISPSD'05<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Sanata Barbara, CA<\/span><\/span><span itemprop=\"startDate\" content=\"2005\"><\/span>)<\/span><br \/>URL: <a href='https:\/\/www.scopus.com\/record\/display.uri?eid=2-s2.0-27744589892&origin=inward' target='blank' itemprop=\"url\">https:\/\/www.scopus.com\/record\/display.uri?eid=2-s2.0-27744589892&origin=inward<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">D\u00f6hler G.<\/span>, <span class=\"author\" itemprop=\"author\">Renner F.<\/span>, <span class=\"author\" itemprop=\"author\">Klar O.<\/span>, <span class=\"author\" itemprop=\"author\">Eckardt M.<\/span>, <span class=\"author\" itemprop=\"author\">Schwanh\u00e4u\u00dfer A.<\/span>, <span class=\"author\" itemprop=\"author\">Malzer S.<\/span>, <span class=\"author\" itemprop=\"author\">Driscoll D.<\/span>, <span class=\"author\" itemprop=\"author\">Hanson M.<\/span>, <span class=\"author\" itemprop=\"author\">Gossard A.<\/span>, <span class=\"author\" itemprop=\"author\">Loata g.<\/span>, <span class=\"author\" itemprop=\"author\">L\u00f6ffler T.<\/span>, <span class=\"author\" itemprop=\"author\">Roskos H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/120315184?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">THz-photomixer based on quasi-ballistic transport<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_120315184\"><span itemprop=\"name\"><strong>Semiconductor Science and Technology<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_120315184\" \/><span itemprop=\"volumeNumber\">20<\/span><\/span>  (<span itemprop=\"datePublished\">2005<\/span>)<br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_120315184\"><span itemprop=\"issn\">ISSN: 0268-1242<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1088\/0268-1242\/20\/7\/007' target='blank' itemprop=\"sameAs\">10.1088\/0268-1242\/20\/7\/007<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106875824?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Chemical vapor phase precipitation of new materials for sub 50 nm transistors Chemische Dampfphasenabscheidung von neuen Materialien f\u00fcr Sub-50-nm-Transistoren<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106875824\"><span itemprop=\"name\"><strong>Chemie Ingenieur Technik<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_106875824\" \/><span itemprop=\"volumeNumber\">77<\/span><\/span>  (<span itemprop=\"datePublished\">2005<\/span>), p. <span itemprop=\"pagination\">1215-1216<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106875824\"><span itemprop=\"issn\">ISSN: 0009-286X<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1002\/cite.200590331' target='blank' itemprop=\"sameAs\">10.1002\/cite.200590331<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Haeublein V.<\/span>, <span class=\"author\" itemprop=\"author\">Sadrawetz S.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Martinz HP.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106877144?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Investigations into the wear of a WL10 ion source<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106877144\"><span itemprop=\"name\"><strong>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_106877144\" \/><span itemprop=\"volumeNumber\">237<\/span><\/span>  (<span itemprop=\"datePublished\">2005<\/span>), p. <span itemprop=\"pagination\">341-345<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106877144\"><span itemprop=\"issn\">ISSN: 0168-583X<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.nimb.2005.05.011' target='blank' itemprop=\"sameAs\">10.1016\/j.nimb.2005.05.011<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">H\u00e4ublein V.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106874064?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Additional peaks in mass spectra due to charge exchange events and dissociation of molecular ions during extraction<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106874064\"><span itemprop=\"name\"><strong>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_106874064\" \/><span itemprop=\"volumeNumber\">237<\/span><\/span>  (<span itemprop=\"datePublished\">2005<\/span>), p. <span itemprop=\"pagination\">346-350<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106874064\"><span itemprop=\"issn\">ISSN: 0168-583X<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.nimb.2005.05.012' target='blank' itemprop=\"sameAs\">10.1016\/j.nimb.2005.05.012<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Lemberger M.<\/span>, <span class=\"author\" itemprop=\"author\">Paskaleva A.<\/span>, <span class=\"author\" itemprop=\"author\">Z\u00fcrcher S.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106876484?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Electrical properties of hafnium silicate films obtained from a single-source MOCVD precursor<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106876484\"><span itemprop=\"name\"><strong>Microelectronics Reliability<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_106876484\" \/><span itemprop=\"volumeNumber\">45<\/span><\/span>  (<span itemprop=\"datePublished\">2005<\/span>), p. <span itemprop=\"pagination\">819-822<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106876484\"><span itemprop=\"issn\">ISSN: 0026-2714<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.microrel.2004.11.040' target='blank' itemprop=\"sameAs\">10.1016\/j.microrel.2004.11.040<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Lemberger M.<\/span>, <span class=\"author\" itemprop=\"author\">Sch\u00f6n F.<\/span>, <span class=\"author\" itemprop=\"author\">Dirnecker T.<\/span>, <span class=\"author\" itemprop=\"author\">Jank M.<\/span>, <span class=\"author\" itemprop=\"author\">Paskaleva A.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/121884224?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">High-k Hafnium Silicate Films on Silicon and Germanium Wafers by MOCVD Using a Single-Source Precursor<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"name\"><strong>Proceedings of the 15th European Conference on Chemical Vapor Deposition (EUROCVD-15), Electrochemical Society<\/strong><\/span>, <span itemprop=\"publisher\" itemscope itemtype=\"http:\/\/schema.org\/Organization\"><span class=\"city\" itemprop=\"address\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"addressLocality\">-<\/span><\/span>: <span itemprop=\"name\">The Electrochemical Society, Inc.<\/span><\/span>, <span itemprop=\"datePublished\">2005<\/span>, p. <span itemprop=\"pagination\">873<\/span><\/span><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">M\u00fcller R.<\/span>, <span class=\"author\" itemprop=\"author\">K\u00fcnecke U.<\/span>, <span class=\"author\" itemprop=\"author\">Weing\u00e4rtner R.<\/span>, <span class=\"author\" itemprop=\"author\">Schmitt H.<\/span>, <span class=\"author\" itemprop=\"author\">Desperrier P.<\/span>, <span class=\"author\" itemprop=\"author\">Wellmann P.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/117589164?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">High Al-doping of SiC using a modified PVT (M-PVT) growth set-up<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_117589164\"><span itemprop=\"name\"><strong>Materials Science Forum<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_117589164\" \/><span itemprop=\"volumeNumber\">483<\/span><\/span>  (<span itemprop=\"datePublished\">2005<\/span>), p. <span itemprop=\"pagination\">31-34<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_117589164\"><span itemprop=\"issn\">ISSN: 0255-5476<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4028\/www.scientific.net\/MSF.483-485.31' target='blank' itemprop=\"sameAs\">10.4028\/www.scientific.net\/MSF.483-485.31<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Rambach M.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Friedrichs P.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/110375144?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Annealing of Aluminium Implanted 4H-SiC: Comparison of Furnace and Lamp Annealing<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_110375144\"><span itemprop=\"name\"><strong>Materials Science Forum<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_110375144\" \/><span itemprop=\"volumeNumber\">483-485<\/span><\/span>  (<span itemprop=\"datePublished\">2005<\/span>), p. <span itemprop=\"pagination\">483<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_110375144\"><span itemprop=\"issn\">ISSN: 0255-5476<\/span><\/span><\/span><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Rambach M.<\/span>, <span class=\"author\" itemprop=\"author\">Schmid F.<\/span>, <span class=\"author\" itemprop=\"author\">Krieger M.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Pensl G.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/110374044?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Implantation and Annealing of Aluminum in 4H Silicon Carbide<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_110374044\"><span itemprop=\"name\"><strong>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_110374044\" \/><span itemprop=\"volumeNumber\">237<\/span><\/span>  (<span itemprop=\"datePublished\">2005<\/span>), p. <span itemprop=\"pagination\">68-71<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_110374044\"><span itemprop=\"issn\">ISSN: 0168-583X<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.nimb.2005.04.079' target='blank' itemprop=\"sameAs\">10.1016\/j.nimb.2005.04.079<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Gro\u00df M.<\/span>, <span class=\"author\" itemprop=\"author\">Ettinger A.<\/span>, <span class=\"author\" itemprop=\"author\">Lemberger M.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106874724?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Characterization of interface state densitiesby photocurrent analysis: Comparison of results for different insulator layers<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106874724\"><span itemprop=\"name\"><strong>Microelectronic Engineering<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_106874724\" \/><span itemprop=\"volumeNumber\">80<\/span><\/span>  (<span itemprop=\"datePublished\">2005<\/span>), p. <span itemprop=\"pagination\">50-53<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106874724\"><span itemprop=\"issn\">ISSN: 0167-9317<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.mee.2005.04.042' target='blank' itemprop=\"sameAs\">10.1016\/j.mee.2005.04.042<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Rommel M.<\/span>, <span class=\"author\" itemprop=\"author\">Gro\u00df M.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/215726567?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Wafer scale characterization of interface state densities without test structures by photocurrent analysis<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">35th European Solid State Device Research Conference<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Grenoble<\/span><\/span><span itemprop=\"startDate\" content=\"2005\"><\/span>)<\/span><br \/>URL: <a href='https:\/\/www.scopus.com\/record\/display.uri?eid=2-s2.0-31744443828&origin=inward' target='blank' itemprop=\"url\">https:\/\/www.scopus.com\/record\/display.uri?eid=2-s2.0-31744443828&origin=inward<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>, <span class=\"author\" itemprop=\"author\">Ullrich M.<\/span>, <span class=\"author\" itemprop=\"author\">Burenkov A.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/118354104?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Ion Sputtering at Grazing Incidence for SIMS-Analysis<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_118354104\"><span itemprop=\"name\"><strong>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_118354104\" \/><span itemprop=\"volumeNumber\">228<\/span><\/span>  (<span itemprop=\"datePublished\">2005<\/span>), p. <span itemprop=\"pagination\">373-377<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_118354104\"><span itemprop=\"issn\">ISSN: 0168-583X<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.nimb.2004.10.073' target='blank' itemprop=\"sameAs\">10.1016\/j.nimb.2004.10.073<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Schmitt H.<\/span>, <span class=\"author\" itemprop=\"author\">M\u00fcller R.<\/span>, <span class=\"author\" itemprop=\"author\">Maier M.<\/span>, <span class=\"author\" itemprop=\"author\">Winnacker A.<\/span>, <span class=\"author\" itemprop=\"author\">Wellmann P.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/117589384?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Photoluminescence study of in-situ rare earth doped PVT-grown SiC single crystals<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_117589384\"><span itemprop=\"name\"><strong>Materials Science Forum<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_117589384\" \/><span itemprop=\"volumeNumber\">483<\/span><\/span>  (<span itemprop=\"datePublished\">2005<\/span>), p. <span itemprop=\"pagination\">445-448<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_117589384\"><span itemprop=\"issn\">ISSN: 0255-5476<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4028\/www.scientific.net\/MSF.483-485.445' target='blank' itemprop=\"sameAs\">10.4028\/www.scientific.net\/MSF.483-485.445<\/a><\/li><\/ul><h3>2004<\/h3><ul class=\"cris-publications \" lang=\"en\"><li itemscope itemtype=\"http:\/\/schema.org\/Book\"><span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Rambach M.<\/span>, <span class=\"author\" itemprop=\"author\">Weiss R.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106431644?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Investigation of rapid thermal annealed pn-junctions in SiC<\/a><\/strong><\/span><br \/><span itemprop=\"datePublished\">2004<\/span><br \/>URL: <a href='https:\/\/www.scopus.com\/record\/display.uri?eid=2-s2.0-8744264042&origin=inward' target='blank' itemprop=\"url\">https:\/\/www.scopus.com\/record\/display.uri?eid=2-s2.0-8744264042&origin=inward<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">F\u00fchner T.<\/span>, <span class=\"author\" itemprop=\"author\">Erdmann A.<\/span>, <span class=\"author\" itemprop=\"author\">Farkas R.<\/span>, <span class=\"author\" itemprop=\"author\">Tollk\u00fchn B.<\/span>, <span class=\"author\" itemprop=\"author\">K\u00f3kai G.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/118042804?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Genetic Algorithms to Improve Mask and Illumination Geometries in Lithographic Imaging Systems<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">1st European Workshop on Hardware Optimisation (EVOHOT2004)<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Coimbra<\/span><\/span>, <span itemprop=\"startDate\" content=\"2004-04-03\">3. April 2004<\/span> - <span itemprop=\"endDate\" content=\"2004-04-05\">5. April 2004<\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"author\">G\u00fcnther R. Raidl, Stefano Cagnoni, J\u00fcrgen Branke, David Wolfe Corne, Rolf Drechsler, Yaochu Jin, Colin G. Johnson, Penousal Machado, Elena Marchiori, Franz Rothlauf, George D. Smith, Giovanni Squillero (ed.): <\/span><span itemprop=\"name\" style=\"font-weight:bold\">Applications of Evolutionary Computing - EvoWorkshops 2004: EvoBIO, EvoCOMNET, EvoHOT, EvoISAP, EvoMUSART, and EvoSTOC<\/span>, <span itemprop=\"publisher\" itemscope itemtype=\"http:\/\/schema.org\/Organization\"><span class=\"city\" itemprop=\"address\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"addressLocality\">Berlin Heidelberg<\/span><\/span>: <\/span> <span itemprop=\"datePublished\">2004<\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1007\/978-3-540-24653-4_22' target='blank' itemprop=\"sameAs\">10.1007\/978-3-540-24653-4_22<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Lehrer C.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Petersen S.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>, <span class=\"author\" itemprop=\"author\">Sch\u00e4fer M.<\/span>, <span class=\"author\" itemprop=\"author\">Sulzbach T.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/119633404?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Integration of field emitters into scanning probe microscopy sensors using focused ion and electron beams<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_119633404\"><span itemprop=\"name\"><strong>Journal of Vacuum Science & Technology B<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_119633404\" \/><span itemprop=\"volumeNumber\">22<\/span><\/span>  (<span itemprop=\"datePublished\">2004<\/span>), p. <span itemprop=\"pagination\">1402-1406<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_119633404\"><span itemprop=\"issn\">ISSN: 1071-1023<\/span><\/span><\/span><br \/>URL: <a href='https:\/\/www.scopus.com\/record\/display.uri?eid=2-s2.0-3242722353\u2228igin=inward' target='blank' itemprop=\"url\">https:\/\/www.scopus.com\/record\/display.uri?eid=2-s2.0-3242722353\u2228igin=inward<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Lemberger M.<\/span>, <span class=\"author\" itemprop=\"author\">Paskaleva A.<\/span>, <span class=\"author\" itemprop=\"author\">Z\u00fcrcher S.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/120026984?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Electrical characterization and reliability aspects of zirconium silicate films obtained from novel MOCVD precursors<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_120026984\"><span itemprop=\"name\"><strong>Microelectronic Engineering<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_120026984\" \/><span itemprop=\"volumeNumber\">72<\/span><\/span>  (<span itemprop=\"datePublished\">2004<\/span>), p. <span itemprop=\"pagination\">315-320<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_120026984\"><span itemprop=\"issn\">ISSN: 0167-9317<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.mee.2004.01.010' target='blank' itemprop=\"sameAs\">10.1016\/j.mee.2004.01.010<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Nguyen PH.<\/span>, <span class=\"author\" itemprop=\"author\">Lorenz J.<\/span>, <span class=\"author\" itemprop=\"author\">Baer E.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/118384244?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Modeling of Chemical-Mechanical Polishing on Patterned Wafers as Part of Integrated Topography Process Simulation<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">MAM2004<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Leuven, Belgium<\/span><\/span>, <span itemprop=\"startDate\" content=\"2004-03-07\">7. March 2004<\/span> - <span itemprop=\"endDate\" content=\"2004-03-10\">10. March 2004<\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"name\" style=\"font-weight:bold\">Microelectronic Engineering<\/span> <span itemprop=\"datePublished\">2004<\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.mee.2004.07.018' target='blank' itemprop=\"sameAs\">10.1016\/j.mee.2004.07.018<\/a><br \/>URL: <a href='http:\/\/www.sciencedirect.com\/science?_ob=MImg&_imagekey=B6V0W-4D1V29P-2-C&_cdi=5657&_user=746735&_orig=browse&_coverDate=10\/01\/2004&_sk=999239998&view=c&wchp=dGLbVlb-zSkzk&md5=4039dffb5d8e4b57dba393cf896acaef&ie=\/sdarticle.pdf' target='blank' itemprop=\"url\">http:\/\/www.sciencedirect.com\/science?_ob=MImg&_imagekey=B6V0W-4D1V29P-2-C&_cdi=5657&_user=746735&_orig=browse&_coverDate=10\/01\/2004&_sk=999239998&view=c&wchp=dGLbVlb-zSkzk&md5=4039dffb5d8e4b57dba393cf896acaef&ie=\/sdarticle.pdf<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Paskaleva A.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Lemberger M.<\/span>, <span class=\"author\" itemprop=\"author\">Z\u00fcrcher S.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/118345524?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Physical and Electrical Properties of Thin High-k HfxTiySizO Film With varying Hf to Ti Ratios<\/a><\/strong><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1063\/1.1702101' target='blank' itemprop=\"sameAs\">10.1063\/1.1702101<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Schmidt C.<\/span>, <span class=\"author\" itemprop=\"author\">Petrik P.<\/span>, <span class=\"author\" itemprop=\"author\">Schneider C.<\/span>, <span class=\"author\" itemprop=\"author\">Fried M.<\/span>, <span class=\"author\" itemprop=\"author\">L\u00f6hner T.<\/span>, <span class=\"author\" itemprop=\"author\">B\u00e1rsony I.<\/span>, <span class=\"author\" itemprop=\"author\">Gyulai J.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/118345744?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Optical Characterization of Ferroelectric Strontium-Bismut-Tantalate (SBT) Thin Films<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_118345744\"><span itemprop=\"name\"><strong>Thin Solid Films<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_118345744\" \/><span itemprop=\"volumeNumber\">455-456<\/span><\/span>  (<span itemprop=\"datePublished\">2004<\/span>), p. <span itemprop=\"pagination\">495-499<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_118345744\"><span itemprop=\"issn\">ISSN: 0040-6090<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/j.tsf.2003.11.248' target='blank' itemprop=\"sameAs\">10.1016\/j.tsf.2003.11.248<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/Book\"><span class=\"author\" itemprop=\"author\">Weiss R.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106878244?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Modeling of the influence of Schottky barrier inhomogeneities on SiC diode characteristics<\/a><\/strong><\/span><br \/><span itemprop=\"datePublished\">2004<\/span><br \/>URL: <a href='https:\/\/www.scopus.com\/record\/display.uri?eid=2-s2.0-8644276383&origin=inward' target='blank' itemprop=\"url\">https:\/\/www.scopus.com\/record\/display.uri?eid=2-s2.0-8644276383&origin=inward<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Yasenov NN.<\/span>, <span class=\"author\" itemprop=\"author\">Berberich SE.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/215829792?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Design, fabrication and characterization of a microactuator for nebulization of fluids<\/a><\/strong><\/span><\/li><\/ul><h3>2003<\/h3><ul class=\"cris-publications \" lang=\"en\"><li itemscope itemtype=\"http:\/\/schema.org\/Book\"><span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Rambach M.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Weiss R.<\/span>, <span class=\"author\" itemprop=\"author\">Rupp R.<\/span>, <span class=\"author\" itemprop=\"author\">Friedrichs P.<\/span>, <span class=\"author\" itemprop=\"author\">Sch\u00f6rner R.<\/span>, <span class=\"author\" itemprop=\"author\">Peters DP.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106879124?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Surface Properties and Electrical Characteristics of Rapid Thermal Annealed 4H-SiC<\/a><\/strong><\/span><br \/><span itemprop=\"datePublished\">2003<\/span><br \/>URL: <a href='https:\/\/www.scopus.com\/record\/display.uri?eid=2-s2.0-18744421066&origin=inward' target='blank' itemprop=\"url\">https:\/\/www.scopus.com\/record\/display.uri?eid=2-s2.0-18744421066&origin=inward<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Berberich SE.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/215724852?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Trench sidewall doping for lateral power devices<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">33rd European Solid-State Device Research Conference, ESSDERC 2003<\/span><span itemprop=\"startDate\" content=\"2003\"><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/ESSDERC.2003.1256893' target='blank' itemprop=\"sameAs\">10.1109\/ESSDERC.2003.1256893<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Dirnecker T.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>, <span class=\"author\" itemprop=\"author\">Ruf A.<\/span>, <span class=\"author\" itemprop=\"author\">Henke D.<\/span>, <span class=\"author\" itemprop=\"author\">Beyer A.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/120484584?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Influence of Antenna Shape and Resist Patterns on Charging Damage During Ion Implantation<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">Ion Implantation Technology<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Taos, New Mexico, USA<\/span><\/span><span itemprop=\"startDate\" content=\"2003\"><\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"name\" style=\"font-weight:bold\">IEEE Proc. on Ion Implantation Technology-2002<\/span>, <span itemprop=\"publisher\" itemscope itemtype=\"http:\/\/schema.org\/Organization\"><span class=\"city\" itemprop=\"address\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"addressLocality\">Piscataway<\/span><\/span>: <\/span> <span itemprop=\"datePublished\">2003<\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/IIT.2002.1257996' target='blank' itemprop=\"sameAs\">10.1109\/IIT.2002.1257996<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Erdmann A.<\/span>, <span class=\"author\" itemprop=\"author\">Farkas R.<\/span>, <span class=\"author\" itemprop=\"author\">F\u00fchner T.<\/span>, <span class=\"author\" itemprop=\"author\">Tollk\u00fchn B.<\/span>, <span class=\"author\" itemprop=\"author\">K\u00f3kai G.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/116183364?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Mask and Source Optimization for Lithographic Imaging Systems<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">Wave-Optical Systems Engineering II<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">San Diego, CA<\/span><\/span>, <span itemprop=\"startDate\" content=\"2003-12-31\">31. December 2003<\/span> - <span itemprop=\"endDate\" content=\"2003-12-31\">31. December 2003<\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"author\">Wyrowski, F. (ed.): <\/span><span itemprop=\"name\" style=\"font-weight:bold\">Wave-Optical Systems Engineering II, SPIE 5182<\/span> <span itemprop=\"datePublished\">2003<\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1117\/12.504732' target='blank' itemprop=\"sameAs\">10.1117\/12.504732<\/a><br \/>URL: <a href='https:\/\/cs2-gitlab.cs.fau.de\/i2public\/publications\/-\/blob\/master\/spie5182_12.ps.gz' target='blank' itemprop=\"url\">https:\/\/cs2-gitlab.cs.fau.de\/i2public\/publications\/-\/blob\/master\/spie5182_12.ps.gz<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Farkas R.<\/span>, <span class=\"author\" itemprop=\"author\">K\u00f3kai G.<\/span>, <span class=\"author\" itemprop=\"author\">Erdmann A.<\/span>, <span class=\"author\" itemprop=\"author\">F\u00fchner T.<\/span>, <span class=\"author\" itemprop=\"author\">Tollk\u00fchn B.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/116191504?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Optimization of one-and two dimensional masks in the optical lithography<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">Treffen der Fachgruppe Maschinelles Lernen, Wissensentdeckung, Data Mining der Gesellschaft f\u00fcr Informatik (FGML 2003)<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Karlsruhe<\/span><\/span>, <span itemprop=\"startDate\" content=\"2003-10-06\">6. October 2003<\/span> - <span itemprop=\"endDate\" content=\"2003-10-08\">8. October 2003<\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"name\" style=\"font-weight:bold\">Treffen der Fachgruppe Maschinelles Lernen, Wissensentdeckung, Data Mining der Gesellschaft f\u00fcr Informatik (FGML 2003)<\/span> <span itemprop=\"datePublished\">2003<\/span><\/span><br \/>URL: <a href='https:\/\/cs2-gitlab.cs.fau.de\/i2public\/publications\/-\/blob\/master\/fgml03.ps.gz' target='blank' itemprop=\"url\">https:\/\/cs2-gitlab.cs.fau.de\/i2public\/publications\/-\/blob\/master\/fgml03.ps.gz<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Lehrer C.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106877364?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Materials processing by focused ion beams for TEM sample preparation and nanostructuring Materialbearbeitung mittels fokussierter ionenstrahlen zur TEM-probenpr\u00e4paration und nanostrukturierung<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106877364\"><span itemprop=\"name\"><strong>Praktische Metallographie<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_106877364\" \/><span itemprop=\"volumeNumber\">40<\/span><\/span>  (<span itemprop=\"datePublished\">2003<\/span>), p. <span itemprop=\"pagination\">184-192<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106877364\"><span itemprop=\"issn\">ISSN: 0032-678X<\/span><\/span><\/span><br \/>URL: <a href='https:\/\/www.scopus.com\/record\/display.uri?eid=2-s2.0-0038681908\u2228igin=inward' target='blank' itemprop=\"url\">https:\/\/www.scopus.com\/record\/display.uri?eid=2-s2.0-0038681908\u2228igin=inward<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Lehrer C.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106878904?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Nanoscale effects in focused ion beam processing<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106878904\"><span itemprop=\"name\"><strong>Applied Physics A-Materials Science & Processing<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_106878904\" \/><span itemprop=\"volumeNumber\">76<\/span><\/span>  (<span itemprop=\"datePublished\">2003<\/span>), p. <span itemprop=\"pagination\">1017-1023<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106878904\"><span itemprop=\"issn\">ISSN: 0947-8396<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1007\/s00339-002-1943-1' target='blank' itemprop=\"sameAs\">10.1007\/s00339-002-1943-1<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Henke D.<\/span>, <span class=\"author\" itemprop=\"author\">Walther S.<\/span>, <span class=\"author\" itemprop=\"author\">Weemann J.<\/span>, <span class=\"author\" itemprop=\"author\">Dirnecker T.<\/span>, <span class=\"author\" itemprop=\"author\">Ruf A.<\/span>, <span class=\"author\" itemprop=\"author\">Beyer A.<\/span>, <span class=\"author\" itemprop=\"author\">Lee K.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/118891784?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Characterization of charging damage in plasma doping<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">Ion Implantation Technology<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Taos, New Mexico, USA<\/span><\/span><span itemprop=\"startDate\" content=\"2003\"><\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"name\" style=\"font-weight:bold\">IEEE Proc. on Ion Implantation TEchnology-2002<\/span>, <span itemprop=\"publisher\" itemscope itemtype=\"http:\/\/schema.org\/Organization\"><span class=\"city\" itemprop=\"address\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"addressLocality\">Piscataway<\/span><\/span>: <\/span> <span itemprop=\"datePublished\">2003<\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/IIT.2002.1257973' target='blank' itemprop=\"sameAs\">10.1109\/IIT.2002.1257973<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Paskaleva A.<\/span>, <span class=\"author\" itemprop=\"author\">Lemberger M.<\/span>, <span class=\"author\" itemprop=\"author\">Z\u00fcrcher S.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/110383284?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Electrical Characterization of Zirconium Silicate Films Obtained from Novel MOCVD Precursors<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">WoDiM 2002<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Grenoble, France<\/span><\/span><span itemprop=\"startDate\" content=\"2003\"><\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"name\" style=\"font-weight:bold\">Proceedings of the 12th Workshop on Dielectrics in Microelectronics (WoDiM 2002)<\/span>, <span itemprop=\"publisher\" itemscope itemtype=\"http:\/\/schema.org\/Organization\"><span class=\"city\" itemprop=\"address\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"addressLocality\">Grenoble, France<\/span><\/span>: <\/span> <span itemprop=\"datePublished\">2003<\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/S0026-2714(03)00180-X' target='blank' itemprop=\"sameAs\">10.1016\/S0026-2714(03)00180-X<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Tollk\u00fchn B.<\/span>, <span class=\"author\" itemprop=\"author\">F\u00fchner T.<\/span>, <span class=\"author\" itemprop=\"author\">Matiut D.<\/span>, <span class=\"author\" itemprop=\"author\">Erdmann A.<\/span>, <span class=\"author\" itemprop=\"author\">Semmler A.<\/span>, <span class=\"author\" itemprop=\"author\">K\u00fcchler B.<\/span>, <span class=\"author\" itemprop=\"author\">K\u00f3kai G.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/116193924?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Will Darwins's Law Help Us to Improve Our Resist Models?<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">Advances in Resist Technology and Processing, SPIE 5039<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Santa Clara, CA<\/span><\/span>, <span itemprop=\"startDate\" content=\"2003-02-23\">23. February 2003<\/span> - <span itemprop=\"endDate\" content=\"2003-02-23\">23. February 2003<\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"author\">Theodore H. Fedynyshyn (ed.): <\/span><span itemprop=\"name\" style=\"font-weight:bold\">Advances in Resist Technology and Processing XX<\/span> <span itemprop=\"datePublished\">2003<\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1117\/12.485078' target='blank' itemprop=\"sameAs\">10.1117\/12.485078<\/a><br \/>URL: <a href='https:\/\/cs2-gitlab.cs.fau.de\/i2public\/publications\/-\/blob\/master\/spie5039-33.pdf' target='blank' itemprop=\"url\">https:\/\/cs2-gitlab.cs.fau.de\/i2public\/publications\/-\/blob\/master\/spie5039-33.pdf<\/a><\/li><\/ul><h3>2002<\/h3><ul class=\"cris-publications \" lang=\"en\"><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Beyer A.<\/span>, <span class=\"author\" itemprop=\"author\">Hausmann A.<\/span>, <span class=\"author\" itemprop=\"author\">Junack M.<\/span>, <span class=\"author\" itemprop=\"author\">Radecker J.<\/span>, <span class=\"author\" itemprop=\"author\">Ruf A.<\/span>, <span class=\"author\" itemprop=\"author\">Dirnecker T.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/118012884?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Plasma induced damage monitoring for HDP processes<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">7th Int. Symp. On Plasma & Process Induced Damage<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Maui, Hawaii, USA<\/span><\/span><span itemprop=\"startDate\" content=\"2002\"><\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"name\" style=\"font-weight:bold\">Proc. 7th Int. Symp. On Plasma & Process Induced Damage<\/span>, <span itemprop=\"publisher\" itemscope itemtype=\"http:\/\/schema.org\/Organization\"><span class=\"city\" itemprop=\"address\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"addressLocality\">Santa Clara, USA<\/span><\/span>: <\/span> <span itemprop=\"datePublished\">2002<\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/PPID.2002.1042615' target='blank' itemprop=\"sameAs\">10.1109\/PPID.2002.1042615<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Boubekeur H.<\/span>, <span class=\"author\" itemprop=\"author\">Mikolajick T.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106962944?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Effect of barium contamination on gate oxide integrity in high-k dram<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106962944\"><span itemprop=\"name\"><strong>Journal of Non-Crystalline Solids<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_106962944\" \/><span itemprop=\"volumeNumber\">303<\/span><\/span>  (<span itemprop=\"datePublished\">2002<\/span>), p. <span itemprop=\"pagination\">12-16<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106962944\"><span itemprop=\"issn\">ISSN: 0022-3093<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/S0022-3093(02)00957-2' target='blank' itemprop=\"sameAs\">10.1016\/S0022-3093(02)00957-2<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Boubekeur H.<\/span>, <span class=\"author\" itemprop=\"author\">Mikolajick T.<\/span>, <span class=\"author\" itemprop=\"author\">Pamler W.<\/span>, <span class=\"author\" itemprop=\"author\">H\u00f6pfner J.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/120027204?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Platinum contamination issues in ferroelectric memories<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_120027204\"><span itemprop=\"name\"><strong>Journal of Applied Physics<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_120027204\" \/><span itemprop=\"volumeNumber\">92<\/span><\/span>  (<span itemprop=\"datePublished\">2002<\/span>), p. <span itemprop=\"pagination\">3257-3265<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_120027204\"><span itemprop=\"issn\">ISSN: 0021-8979<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1063\/1.1500414' target='blank' itemprop=\"sameAs\">10.1063\/1.1500414<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Dirnecker T.<\/span>, <span class=\"author\" itemprop=\"author\">Ruf A.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Beyer A.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Henke D.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/215722303?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Influence of photoresist pattern on charging damage during high current ion implantation<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">7th International Symposium on Plasma- and Process-Induced Damage, P2ID 2002<\/span><span itemprop=\"startDate\" content=\"2002\"><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/PPID.2002.1042620' target='blank' itemprop=\"sameAs\">10.1109\/PPID.2002.1042620<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/Book\"><span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/118368844?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Erlanger Berichte Mikroelektronik<\/a><\/strong><\/span><br \/><span itemprop=\"publisher\" itemscope itemtype=\"http:\/\/schema.org\/Organization\"><span class=\"city\" itemprop=\"address\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"addressLocality\">Aachen<\/span><\/span>: <span itemprop=\"name\">Shaker<\/span><\/span>, <span itemprop=\"datePublished\">2002<\/span><br \/><span itemprop=\"isbn\">ISBN: 3-8322-0960-3<\/span><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Fujita M.<\/span>, <span class=\"author\" itemprop=\"author\">Tajima J.<\/span>, <span class=\"author\" itemprop=\"author\">Nakagawa T.<\/span>, <span class=\"author\" itemprop=\"author\">Abo S.<\/span>, <span class=\"author\" itemprop=\"author\">Kinomura A.<\/span>, <span class=\"author\" itemprop=\"author\">P\u00e1szti F.<\/span>, <span class=\"author\" itemprop=\"author\">Takai M.<\/span>, <span class=\"author\" itemprop=\"author\">Schork R.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/119666404?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Development of enhanced depth-resolution technique for shallow dopant profiles<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_119666404\"><span itemprop=\"name\"><strong>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_119666404\" \/><span itemprop=\"volumeNumber\">190<\/span><\/span>  (<span itemprop=\"datePublished\">2002<\/span>), p. <span itemprop=\"pagination\">26-33<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_119666404\"><span itemprop=\"issn\">ISSN: 0168-583X<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/S0168-583X(01)01248-4' target='blank' itemprop=\"sameAs\">10.1016\/S0168-583X(01)01248-4<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">H\u00e4ublein V.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/215722001?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">ENCOTION - A new simulation tool for energetic contamination analysis<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">2002 14th IEEE International Conference on Ion Implantation Technology, IIT 2002<\/span><span itemprop=\"startDate\" content=\"2002\"><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/IIT.2002.1257977' target='blank' itemprop=\"sameAs\">10.1109\/IIT.2002.1257977<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">H\u00e4ublein V.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>, <span class=\"author\" itemprop=\"author\">Walser H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/215723010?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Investigation of lanthanum contamination from a lanthanated tungsten ion source<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">2002 14th IEEE International Conference on Ion Implantation Technology, IIT 2002<\/span><span itemprop=\"startDate\" content=\"2002\"><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/IIT.2002.1258011' target='blank' itemprop=\"sameAs\">10.1109\/IIT.2002.1258011<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Jank M.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/215722682?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Investigation of implantation-induced defects in thin gate oxides using low field tunnel currents<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">2002 14th IEEE International Conference on Ion Implantation Technology, IIT 2002<\/span><span itemprop=\"startDate\" content=\"2002\"><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/IIT.2002.1257972' target='blank' itemprop=\"sameAs\">10.1109\/IIT.2002.1257972<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Leistner T.<\/span>, <span class=\"author\" itemprop=\"author\">Lehmbacher K.<\/span>, <span class=\"author\" itemprop=\"author\">H\u00e4rter P.<\/span>, <span class=\"author\" itemprop=\"author\">Schmidt C.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/107159184?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">MOCVD of titanium dioxide on the basis of new precursors<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_107159184\"><span itemprop=\"name\"><strong>Journal of Non-Crystalline Solids<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_107159184\" \/><span itemprop=\"volumeNumber\">303<\/span><\/span>  (<span itemprop=\"datePublished\">2002<\/span>), p. <span itemprop=\"pagination\">64-68<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_107159184\"><span itemprop=\"issn\">ISSN: 0022-3093<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/S0022-3093(02)00965-1' target='blank' itemprop=\"sameAs\">10.1016\/S0022-3093(02)00965-1<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Weiss R.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/215721684?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Different ion implanted edge terminations for Schottky diodes on SiC<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">2002 14th IEEE International Conference on Ion Implantation Technology, IIT 2002<\/span><span itemprop=\"startDate\" content=\"2002\"><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/IIT.2002.1257958' target='blank' itemprop=\"sameAs\">10.1109\/IIT.2002.1257958<\/a><\/li><\/ul><h3>2001<\/h3><ul class=\"cris-publications \" lang=\"en\"><li itemscope itemtype=\"http:\/\/schema.org\/Book\"><span class=\"author\" itemprop=\"author\">Boubekeur H.<\/span>, <span class=\"author\" itemprop=\"author\">Mikolajick T.<\/span>, <span class=\"author\" itemprop=\"author\">H\u00f6pfner J.<\/span>, <span class=\"author\" itemprop=\"author\">Dehm C.<\/span>, <span class=\"author\" itemprop=\"author\">Pamler W.<\/span>, <span class=\"author\" itemprop=\"author\">Steiner J.<\/span>, <span class=\"author\" itemprop=\"author\">Kilian G.<\/span>, <span class=\"author\" itemprop=\"author\">Kolbesen B.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106942924?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Barium, strontium and bismuth contamination in CMOS processes<\/a><\/strong><\/span><br \/><span itemprop=\"publisher\" itemscope itemtype=\"http:\/\/schema.org\/Organization\"><span itemprop=\"name\">Trans Tech Publications Ltd<\/span><\/span>, <span itemprop=\"datePublished\">2001<\/span><br \/><span itemprop=\"isbn\">ISBN: 9783908450573<\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.4028\/www.scientific.net\/SSP.76-77.9' target='blank' itemprop=\"sameAs\">10.4028\/www.scientific.net\/SSP.76-77.9<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Boubekeur H.<\/span>, <span class=\"author\" itemprop=\"author\">Mikolajick T.<\/span>, <span class=\"author\" itemprop=\"author\">Nagel N.<\/span>, <span class=\"author\" itemprop=\"author\">Dehm C.<\/span>, <span class=\"author\" itemprop=\"author\">Pamler W.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/215720794?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Impact of platinum contamination on ferroelectric memories<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">13th International Symposium on Integrated Ferroelectrics<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Colorado Springs, CO<\/span><\/span><span itemprop=\"startDate\" content=\"2001\"><\/span>)<\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1080\/10584580108015667' target='blank' itemprop=\"sameAs\">10.1080\/10584580108015667<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Dziomba T.<\/span>, <span class=\"author\" itemprop=\"author\">Danzebrink H.<\/span>, <span class=\"author\" itemprop=\"author\">Lehrer C.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Sulzbach T.<\/span>, <span class=\"author\" itemprop=\"author\">Ohlsson O.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/107093624?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">High-resolution constant-height imaging with apertured silicon cantilever probes<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_107093624\"><span itemprop=\"name\"><strong>Journal of Microscopy<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_107093624\" \/><span itemprop=\"volumeNumber\">202<\/span><\/span>  (<span itemprop=\"datePublished\">2001<\/span>), p. <span itemprop=\"pagination\">22-27<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_107093624\"><span itemprop=\"issn\">ISSN: 0022-2720<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1046\/j.1365-2818.2001.00858.x' target='blank' itemprop=\"sameAs\">10.1046\/j.1365-2818.2001.00858.x<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Jank M.<\/span>, <span class=\"author\" itemprop=\"author\">Lemberger M.<\/span>, <span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/107139164?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Electrical reliability aspects of through the gate implanted MOS structures with thin oxides<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_107139164\"><span itemprop=\"name\"><strong>Microelectronics Reliability<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_107139164\" \/><span itemprop=\"volumeNumber\">41<\/span><\/span>  (<span itemprop=\"datePublished\">2001<\/span>), p. <span itemprop=\"pagination\">987-990<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_107139164\"><span itemprop=\"issn\">ISSN: 0026-2714<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/S0026-2714(01)00053-1' target='blank' itemprop=\"sameAs\">10.1016\/S0026-2714(01)00053-1<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Lehrer C.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Petersen S.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/107115184?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Limitations of focused ion beam nanomachining<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_107115184\"><span itemprop=\"name\"><strong>Journal of Vacuum Science & Technology B<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_107115184\" \/><span itemprop=\"volumeNumber\">19<\/span><\/span>  (<span itemprop=\"datePublished\">2001<\/span>), p. <span itemprop=\"pagination\">2533-2538<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_107115184\"><span itemprop=\"issn\">ISSN: 1071-1023<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1116\/1.1417553' target='blank' itemprop=\"sameAs\">10.1116\/1.1417553<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Lehrer C.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Petersen S.<\/span>, <span class=\"author\" itemprop=\"author\">Sulzbach T.<\/span>, <span class=\"author\" itemprop=\"author\">Ohlsson O.<\/span>, <span class=\"author\" itemprop=\"author\">Dziomba T.<\/span>, <span class=\"author\" itemprop=\"author\">Danzebrink H.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/107140704?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Fabrication of silicon aperture probes for scanning near-field optical microscopy by focused ion beam nano machining<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_107140704\"><span itemprop=\"name\"><strong>Microelectronic Engineering<\/strong><\/span><\/span> (<span itemprop=\"datePublished\">2001<\/span>), p. <span itemprop=\"pagination\">721-728<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_107140704\"><span itemprop=\"issn\">ISSN: 0167-9317<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/S0167-9317(01)00463-4' target='blank' itemprop=\"sameAs\">10.1016\/S0167-9317(01)00463-4<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Sch\u00fcr C.<\/span>, <span class=\"author\" itemprop=\"author\">Marek T.<\/span>, <span class=\"author\" itemprop=\"author\">Strunk HP.<\/span>, <span class=\"author\" itemprop=\"author\">Tautz S.<\/span>, <span class=\"author\" itemprop=\"author\">Steen C.<\/span>, <span class=\"author\" itemprop=\"author\">Kiesel P.<\/span>, <span class=\"author\" itemprop=\"author\">Malzer S.<\/span>, <span class=\"author\" itemprop=\"author\">D\u00f6hler G.<\/span>, <span class=\"author\" itemprop=\"author\">Niecke M.<\/span>, <span class=\"author\" itemprop=\"author\">Schr\u00f6der F.<\/span>, <span class=\"author\" itemprop=\"author\">Mayer R.<\/span>, <span class=\"author\" itemprop=\"author\">Knappe R.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/121003124?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Substrate misorientation as additional parameter for low temperature growth of GaAs<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_121003124\"><span itemprop=\"name\"><strong>Physik mikrostrukturierter Halbleiter<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_121003124\" \/><span itemprop=\"volumeNumber\">23<\/span><\/span>  (<span itemprop=\"datePublished\">2001<\/span>), p. <span itemprop=\"pagination\">145-150<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_121003124\"><span itemprop=\"issn\">ISSN: 1434-2073<\/span><\/span><\/span><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Weiss R.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106944024?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Tungsten, nickel, and molybdenum Schottky diodes with different edge termination<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106944024\"><span itemprop=\"name\"><strong>Applied Surface Science<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_106944024\" \/><span itemprop=\"volumeNumber\">184<\/span><\/span>  (<span itemprop=\"datePublished\">2001<\/span>), p. <span itemprop=\"pagination\">413-418<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106944024\"><span itemprop=\"issn\">ISSN: 0169-4332<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/S0169-4332(01)00527-X' target='blank' itemprop=\"sameAs\">10.1016\/S0169-4332(01)00527-X<\/a><\/li><\/ul><h3>2000<\/h3><ul class=\"cris-publications \" lang=\"en\"><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Boubekeur H.<\/span>, <span class=\"author\" itemprop=\"author\">H\u00f6pfner J.<\/span>, <span class=\"author\" itemprop=\"author\">Mikolajick T.<\/span>, <span class=\"author\" itemprop=\"author\">Dehm C.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/107084604?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Aspects of barium contamination in high dielectric dynamic random access memories<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_107084604\"><span itemprop=\"name\"><strong>Journal of The Electrochemical Society<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_107084604\" \/><span itemprop=\"volumeNumber\">147<\/span><\/span>  (<span itemprop=\"datePublished\">2000<\/span>), p. <span itemprop=\"pagination\">4297-4300<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_107084604\"><span itemprop=\"issn\">ISSN: 0013-4651<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1149\/1.1394057' target='blank' itemprop=\"sameAs\">10.1149\/1.1394057<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Funk K.<\/span>, <span class=\"author\" itemprop=\"author\">H\u00e4ublein V.<\/span>, <span class=\"author\" itemprop=\"author\">Chakor H.<\/span>, <span class=\"author\" itemprop=\"author\">Ameen M.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>, <span class=\"author\" itemprop=\"author\">Ramirez A.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/215637067?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Investigation of molybdenum contamination in 11B+ and 31P+ implants<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">2000 13th International Conference on Ion Implantation Technology, IIT 2000<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Alpbach<\/span><\/span><span itemprop=\"startDate\" content=\"2000\"><\/span>)<\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/.2000.924252' target='blank' itemprop=\"sameAs\">10.1109\/.2000.924252<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Jank M.<\/span>, <span class=\"author\" itemprop=\"author\">Lemberger M.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/215636782?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Gate oxide damage due to through the gate implantation in MOS-structures with ultrathin and standard oxides<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">2000 13th International Conference on Ion Implantation Technology, IIT 2000<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Alpbach<\/span><\/span><span itemprop=\"startDate\" content=\"2000\"><\/span>)<\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/IIT.2000.924101' target='blank' itemprop=\"sameAs\">10.1109\/IIT.2000.924101<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Kr\u00f6ner F.<\/span>, <span class=\"author\" itemprop=\"author\">Schork R.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Burenkov A.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/215637352?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Phosphorus Ion Shower Implantation for special power IC applications<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">2000 13th International Conference on Ion Implantation Technology, IIT 2000<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Alpbach<\/span><\/span><span itemprop=\"startDate\" content=\"2000\"><\/span>)<\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/.2000.924191' target='blank' itemprop=\"sameAs\">10.1109\/.2000.924191<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Lehrer C.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Petersen S.<\/span>, <span class=\"author\" itemprop=\"author\">Mizutam M.<\/span>, <span class=\"author\" itemprop=\"author\">Takai M.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/215636212?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Defects and gallium - Contamination during focused ion beam micro machining<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">2000 13th International Conference on Ion Implantation Technology, IIT 2000<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Alpbach<\/span><\/span><span itemprop=\"startDate\" content=\"2000\"><\/span>)<\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/.2000.924248' target='blank' itemprop=\"sameAs\">10.1109\/.2000.924248<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Tajima J.<\/span>, <span class=\"author\" itemprop=\"author\">Park Y.<\/span>, <span class=\"author\" itemprop=\"author\">Fujita M.<\/span>, <span class=\"author\" itemprop=\"author\">Takai M.<\/span>, <span class=\"author\" itemprop=\"author\">Schork R.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/215636497?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Enhanced depth-resolution analysis with medium energy ion scattering (meis) for shallow junction profiling<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">2000 13th International Conference on Ion Implantation Technology, IIT 2000<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Alpbach<\/span><\/span><span itemprop=\"startDate\" content=\"2000\"><\/span>)<\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1109\/.2000.924225' target='blank' itemprop=\"sameAs\">10.1109\/.2000.924225<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Weiland R.<\/span>, <span class=\"author\" itemprop=\"author\">Boit C.<\/span>, <span class=\"author\" itemprop=\"author\">Dawes N.<\/span>, <span class=\"author\" itemprop=\"author\">Dzieslaty A.<\/span>, <span class=\"author\" itemprop=\"author\">Demm E.<\/span>, <span class=\"author\" itemprop=\"author\">Ebersberger B.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Geyer S.<\/span>, <span class=\"author\" itemprop=\"author\">Hirsch A.<\/span>, <span class=\"author\" itemprop=\"author\">Lehrer C.<\/span>, <span class=\"author\" itemprop=\"author\">Meis P.<\/span>, <span class=\"author\" itemprop=\"author\">Kamolz M.<\/span>, <span class=\"author\" itemprop=\"author\">Lezec H.<\/span>, <span class=\"author\" itemprop=\"author\">Rettenmaier H.<\/span>, <span class=\"author\" itemprop=\"author\">Tlttes W.<\/span>, <span class=\"author\" itemprop=\"author\">Trefchler R.<\/span>, <span class=\"author\" itemprop=\"author\">Zimmermann H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/215637707?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Wafer Conserving Full Range Construction Analysis for IC Fabrication and Process Development Based on FIB \/Dual Beam Inline Application<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">Proceedings of the 26th International Symposium for Testing and Failure Analysis<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Bellevue, WA<\/span><\/span><span itemprop=\"startDate\" content=\"2000\"><\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"name\" style=\"font-weight:bold\">Proceedings of the 26th International Symposium for Testing and Failure Analysis<\/span> <span itemprop=\"datePublished\">2000<\/span><\/span><br \/>URL: <a href='https:\/\/www.scopus.com\/record\/display.uri?eid=2-s2.0-10744227841\u2228igin=inward' target='blank' itemprop=\"url\">https:\/\/www.scopus.com\/record\/display.uri?eid=2-s2.0-10744227841\u2228igin=inward<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Yavas O.<\/span>, <span class=\"author\" itemprop=\"author\">Ochiai C.<\/span>, <span class=\"author\" itemprop=\"author\">Takai M.<\/span>, <span class=\"author\" itemprop=\"author\">Park Y.<\/span>, <span class=\"author\" itemprop=\"author\">Lehrer C.<\/span>, <span class=\"author\" itemprop=\"author\">Lipp S.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>, <span class=\"author\" itemprop=\"author\">Hosono A.<\/span>, <span class=\"author\" itemprop=\"author\">Okuda S.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106995724?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Field emitter array fabricated using focused ion and electron beam induced reaction<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106995724\"><span itemprop=\"name\"><strong>Journal of Vacuum Science & Technology B<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_106995724\" \/><span itemprop=\"volumeNumber\">18<\/span><\/span>  (<span itemprop=\"datePublished\">2000<\/span>), p. <span itemprop=\"pagination\">976-979<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106995724\"><span itemprop=\"issn\">ISSN: 1071-1023<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1116\/1.591310' target='blank' itemprop=\"sameAs\">10.1116\/1.591310<\/a><\/li><\/ul><h3>1999<\/h3><ul class=\"cris-publications \" lang=\"en\"><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Mayer P.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Haeublein V.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/215633498?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Forming nitrided gate oxides by nitrogen implantation into the substrate before gate oxidation by RTO<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">Proceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98)<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Kyoto, Jpn<\/span><\/span><span itemprop=\"startDate\" content=\"1999\"><\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"name\" style=\"font-weight:bold\">Proceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98)<\/span>, <span itemprop=\"publisher\" itemscope itemtype=\"http:\/\/schema.org\/Organization\"><span class=\"city\" itemprop=\"address\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"addressLocality\">Piscataway, NJ, United States<\/span><\/span>: <\/span> <span itemprop=\"datePublished\">1999<\/span><\/span><br \/>URL: <a href='https:\/\/www.scopus.com\/record\/display.uri?eid=2-s2.0-0033338246&origin=inward' target='blank' itemprop=\"url\">https:\/\/www.scopus.com\/record\/display.uri?eid=2-s2.0-0033338246&origin=inward<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Bauer A.<\/span>, <span class=\"author\" itemprop=\"author\">Mayer P.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Haeublein V.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/215633767?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Implantation of nitrogen into polysilicon to suppress boron penetration through the gate oxide<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">Proceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98)<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Kyoto, Jpn<\/span><\/span><span itemprop=\"startDate\" content=\"1999\"><\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"name\" style=\"font-weight:bold\">Proceedings of the 1998 International Conference on 'Ion Implantation Technology' Proceedings (IIT'98)<\/span>, <span itemprop=\"publisher\" itemscope itemtype=\"http:\/\/schema.org\/Organization\"><span class=\"city\" itemprop=\"address\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"addressLocality\">Piscataway, NJ, United States<\/span><\/span>: <\/span> <span itemprop=\"datePublished\">1999<\/span><\/span><br \/>URL: <a href='https:\/\/www.scopus.com\/record\/display.uri?eid=2-s2.0-0033322718&origin=inward' target='blank' itemprop=\"url\">https:\/\/www.scopus.com\/record\/display.uri?eid=2-s2.0-0033322718&origin=inward<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Bir\u00f3 L.<\/span>, <span class=\"author\" itemprop=\"author\">M\u00e1rk G.<\/span>, <span class=\"author\" itemprop=\"author\">Gyulai J.<\/span>, <span class=\"author\" itemprop=\"author\">Havancs\u00e1k K.<\/span>, <span class=\"author\" itemprop=\"author\">Lipp S.<\/span>, <span class=\"author\" itemprop=\"author\">Lehrer C.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/107010244?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">AFM and STM investigation of carbon nanotubes produced by high energy ion irradiation of graphite<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_107010244\"><span itemprop=\"name\"><strong>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_107010244\" \/><span itemprop=\"volumeNumber\">147<\/span><\/span>  (<span itemprop=\"datePublished\">1999<\/span>), p. <span itemprop=\"pagination\">142-147<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_107010244\"><span itemprop=\"issn\">ISSN: 0168-583X<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/S0168-583X(98)00565-5' target='blank' itemprop=\"sameAs\">10.1016\/S0168-583X(98)00565-5<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Bir\u00f3 L.<\/span>, <span class=\"author\" itemprop=\"author\">M\u00e1rk G.<\/span>, <span class=\"author\" itemprop=\"author\">Gyulai J.<\/span>, <span class=\"author\" itemprop=\"author\">Rozlosnik N.<\/span>, <span class=\"author\" itemprop=\"author\">K\u00fcrti J.<\/span>, <span class=\"author\" itemprop=\"author\">Szab\u00f3 B.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106999904?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Scanning probe method investigation of carbon nanotubes produced by high energy ion irradiation of graphite<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106999904\"><span itemprop=\"name\"><strong>Carbon<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_106999904\" \/><span itemprop=\"volumeNumber\">37<\/span><\/span>  (<span itemprop=\"datePublished\">1999<\/span>), p. <span itemprop=\"pagination\">739-744<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106999904\"><span itemprop=\"issn\">ISSN: 0008-6223<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/S0008-6223(98)00264-4' target='blank' itemprop=\"sameAs\">10.1016\/S0008-6223(98)00264-4<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Bir\u00f3 L.<\/span>, <span class=\"author\" itemprop=\"author\">Szab\u00f3 B.<\/span>, <span class=\"author\" itemprop=\"author\">M\u00e1rk G.<\/span>, <span class=\"author\" itemprop=\"author\">Gyulai J.<\/span>, <span class=\"author\" itemprop=\"author\">Havancs\u00e1k K.<\/span>, <span class=\"author\" itemprop=\"author\">K\u00fcrti J.<\/span>, <span class=\"author\" itemprop=\"author\">Dunlop A.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/107079104?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Carbon nanotubes produced by high energy (E > 100 MeV), heavy ion irradiation of graphite<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_107079104\"><span itemprop=\"name\"><strong>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_107079104\" \/><span itemprop=\"volumeNumber\">148<\/span><\/span>  (<span itemprop=\"datePublished\">1999<\/span>), p. <span itemprop=\"pagination\">1102-1105<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_107079104\"><span itemprop=\"issn\">ISSN: 0168-583X<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/S0168-583X(98)00738-1' target='blank' itemprop=\"sameAs\">10.1016\/S0168-583X(98)00738-1<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Danzebrink H.<\/span>, <span class=\"author\" itemprop=\"author\">Dziomba T.<\/span>, <span class=\"author\" itemprop=\"author\">Sulzbach T.<\/span>, <span class=\"author\" itemprop=\"author\">Ohlsson O.<\/span>, <span class=\"author\" itemprop=\"author\">Lehrer C.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106955684?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Nano-slit probes for near-field optical microscopy fabricated by focused ion beams<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106955684\"><span itemprop=\"name\"><strong>Journal of Microscopy<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_106955684\" \/><span itemprop=\"volumeNumber\">194<\/span><\/span>  (<span itemprop=\"datePublished\">1999<\/span>), p. <span itemprop=\"pagination\">335-339<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106955684\"><span itemprop=\"issn\">ISSN: 0022-2720<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1046\/j.1365-2818.1999.00505.x' target='blank' itemprop=\"sameAs\">10.1046\/j.1365-2818.1999.00505.x<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Dziomba T.<\/span>, <span class=\"author\" itemprop=\"author\">Sulzbach T.<\/span>, <span class=\"author\" itemprop=\"author\">Ohlsson O.<\/span>, <span class=\"author\" itemprop=\"author\">Lehrer C.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Danzebrink H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106945124?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Ion beam-treated silicon probes operated in transmission and cross-polarized reflection mode near-infrared scanning near-field optical microscopy (NIR-SNOM)<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106945124\"><span itemprop=\"name\"><strong>Surface and Interface Analysis<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_106945124\" \/><span itemprop=\"volumeNumber\">27<\/span><\/span>  (<span itemprop=\"datePublished\">1999<\/span>), p. <span itemprop=\"pagination\">486-490<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106945124\"><span itemprop=\"issn\">ISSN: 0142-2421<\/span><\/span><\/span><br \/>URL: <a href='https:\/\/www.scopus.com\/record\/display.uri?eid=2-s2.0-0032643999&origin=inward' target='blank' itemprop=\"url\">https:\/\/www.scopus.com\/record\/display.uri?eid=2-s2.0-0032643999&origin=inward<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Park Y.<\/span>, <span class=\"author\" itemprop=\"author\">Nagai T.<\/span>, <span class=\"author\" itemprop=\"author\">Takai M.<\/span>, <span class=\"author\" itemprop=\"author\">Lehrer C.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106972624?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Comparison of beam-induced deposition using ion microprobe<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106972624\"><span itemprop=\"name\"><strong>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_106972624\" \/><span itemprop=\"volumeNumber\">148<\/span><\/span>  (<span itemprop=\"datePublished\">1999<\/span>), p. <span itemprop=\"pagination\">25-31<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106972624\"><span itemprop=\"issn\">ISSN: 0168-583X<\/span><\/span><\/span><br \/>URL: <a href='https:\/\/www.scopus.com\/record\/display.uri?eid=2-s2.0-0033513926&origin=inward' target='blank' itemprop=\"url\">https:\/\/www.scopus.com\/record\/display.uri?eid=2-s2.0-0033513926&origin=inward<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Park Y.<\/span>, <span class=\"author\" itemprop=\"author\">Takai M.<\/span>, <span class=\"author\" itemprop=\"author\">Lehrer C.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106994844?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Impurity incorporation during beam assisted processing analyzed using nuclear microprobe<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106994844\"><span itemprop=\"name\"><strong>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_106994844\" \/><span itemprop=\"volumeNumber\">158<\/span><\/span>  (<span itemprop=\"datePublished\">1999<\/span>), p. <span itemprop=\"pagination\">487-492<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106994844\"><span itemprop=\"issn\">ISSN: 0168-583X<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/S0168-583X(99)00371-7' target='blank' itemprop=\"sameAs\">10.1016\/S0168-583X(99)00371-7<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Park Y.<\/span>, <span class=\"author\" itemprop=\"author\">Takai M.<\/span>, <span class=\"author\" itemprop=\"author\">Lehrer C.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/106983844?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Investigation of Cu films by focused ion beam induced deposition using nuclear microprobe<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106983844\"><span itemprop=\"name\"><strong>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_106983844\" \/><span itemprop=\"volumeNumber\">158<\/span><\/span>  (<span itemprop=\"datePublished\">1999<\/span>), p. <span itemprop=\"pagination\">493-498<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_106983844\"><span itemprop=\"issn\">ISSN: 0168-583X<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/S0168-583X(99)00501-7' target='blank' itemprop=\"sameAs\">10.1016\/S0168-583X(99)00501-7<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Schmidt C.<\/span>, <span class=\"author\" itemprop=\"author\">Lehnert W.<\/span>, <span class=\"author\" itemprop=\"author\">Leistner T.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/215634036?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">MOCVD of ferroelectric thin films<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">Proceedings of the 1999 12th European Conference on Chemical Vapour Deposition ((EUROCVD12)<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Barcelona, Spain<\/span><\/span><span itemprop=\"startDate\" content=\"1999\"><\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"name\" style=\"font-weight:bold\">Proceedings of the 1999 12th European Conference on Chemical Vapour Deposition ((EUROCVD12)<\/span>, <span itemprop=\"publisher\" itemscope itemtype=\"http:\/\/schema.org\/Organization\"><span class=\"city\" itemprop=\"address\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"addressLocality\">Les Ulis Cedex A, France<\/span><\/span>: <\/span> <span itemprop=\"datePublished\">1999<\/span><\/span><br \/>URL: <a href='https:\/\/www.scopus.com\/record\/display.uri?eid=2-s2.0-0033188109&origin=inward' target='blank' itemprop=\"url\">https:\/\/www.scopus.com\/record\/display.uri?eid=2-s2.0-0033188109&origin=inward<\/a><\/li><\/ul><h3>1998<\/h3><ul class=\"cris-publications \" lang=\"en\"><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Montandon C.<\/span>, <span class=\"author\" itemprop=\"author\">Bourenkov A.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Pichler P.<\/span>, <span class=\"author\" itemprop=\"author\">Biersack JP.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/215458553?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Distortion of sims profiles due to ion beam mixing: Shallow arsenic implants in silicon<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_215458553\"><span itemprop=\"name\"><strong>Radiation Effects and Defects in Solids<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_215458553\" \/><span itemprop=\"volumeNumber\">145<\/span><\/span>  (<span itemprop=\"datePublished\">1998<\/span>), p. <span itemprop=\"pagination\">213-223<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_215458553\"><span itemprop=\"issn\">ISSN: 1042-0150<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1080\/10420159808225765' target='blank' itemprop=\"sameAs\">10.1080\/10420159808225765<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Park Y.<\/span>, <span class=\"author\" itemprop=\"author\">Takai M.<\/span>, <span class=\"author\" itemprop=\"author\">Lehrer C.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/215460394?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Microprobe analysis of Pt films deposited by beam induced reaction<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_215460394\"><span itemprop=\"name\"><strong>Japanese Journal of Applied Physics<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_215460394\" \/><span itemprop=\"volumeNumber\">37<\/span><\/span>  (<span itemprop=\"datePublished\">1998<\/span>), p. <span itemprop=\"pagination\">7042-7046<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_215460394\"><span itemprop=\"issn\">ISSN: 0021-4922<\/span><\/span><\/span><br \/>URL: <a href='https:\/\/www.scopus.com\/record\/display.uri?eid=2-s2.0-4243307043&origin=inward' target='blank' itemprop=\"url\">https:\/\/www.scopus.com\/record\/display.uri?eid=2-s2.0-4243307043&origin=inward<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Park Y.<\/span>, <span class=\"author\" itemprop=\"author\">Takai M.<\/span>, <span class=\"author\" itemprop=\"author\">Nagai T.<\/span>, <span class=\"author\" itemprop=\"author\">Kishimoto T.<\/span>, <span class=\"author\" itemprop=\"author\">Seidl A.<\/span>, <span class=\"author\" itemprop=\"author\">Lehrer C.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/215459815?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Microanalysis of masklessly fabricated micro structures using nuclear microprobe<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_215459815\"><span itemprop=\"name\"><strong>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms<\/strong><\/span><\/span> (<span itemprop=\"datePublished\">1998<\/span>), p. <span itemprop=\"pagination\">373-378<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_215459815\"><span itemprop=\"issn\">ISSN: 0168-583X<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/S0168-583X(97)00709-X' target='blank' itemprop=\"sameAs\">10.1016\/S0168-583X(97)00709-X<\/a><\/li><\/ul><h3>1997<\/h3><ul class=\"cris-publications \" lang=\"en\"><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Bir\u00f3 L.<\/span>, <span class=\"author\" itemprop=\"author\">Gyulai J.<\/span>, <span class=\"author\" itemprop=\"author\">Havancs\u00e1k K.<\/span>, <span class=\"author\" itemprop=\"author\">Didyk A.<\/span>, <span class=\"author\" itemprop=\"author\">Bogen S.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/215460722?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">New method based on atomic force microscopy for in-depth characterization of damage in Si irraadiate with 209 MeV Kr<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_215460722\"><span itemprop=\"name\"><strong>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_215460722\" \/><span itemprop=\"volumeNumber\">122<\/span><\/span>  (<span itemprop=\"datePublished\">1997<\/span>), p. <span itemprop=\"pagination\">559-562<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_215460722\"><span itemprop=\"issn\">ISSN: 0168-583X<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/S0168-583X(96)00662-3' target='blank' itemprop=\"sameAs\">10.1016\/S0168-583X(96)00662-3<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Bir\u00f3 L.<\/span>, <span class=\"author\" itemprop=\"author\">Gyulai J.<\/span>, <span class=\"author\" itemprop=\"author\">Havancs\u00e1k K.<\/span>, <span class=\"author\" itemprop=\"author\">Didyk A.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/215458887?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">In-depth damage distribution by scanning probe methods in targets irradiated with 200 MeV ions<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_215458887\"><span itemprop=\"name\"><strong>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms<\/strong><\/span><\/span> (<span itemprop=\"datePublished\">1997<\/span>), p. <span itemprop=\"pagination\">32-37<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_215458887\"><span itemprop=\"issn\">ISSN: 0168-583X<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/S0168-583X(96)01106-8' target='blank' itemprop=\"sameAs\">10.1016\/S0168-583X(96)01106-8<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Stoemenos J.<\/span>, <span class=\"author\" itemprop=\"author\">Schork R.<\/span>, <span class=\"author\" itemprop=\"author\">Nejim A.<\/span>, <span class=\"author\" itemprop=\"author\">Hemment P.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/215461007?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Synthesis of SiC by high temperature C+ implantation into SiO2: The role of Si\/SiO2 interface<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_215461007\"><span itemprop=\"name\"><strong>Journal of The Electrochemical Society<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_215461007\" \/><span itemprop=\"volumeNumber\">144<\/span><\/span>  (<span itemprop=\"datePublished\">1997<\/span>), p. <span itemprop=\"pagination\">4314-4320<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_215461007\"><span itemprop=\"issn\">ISSN: 0013-4651<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1149\/1.1838184' target='blank' itemprop=\"sameAs\">10.1149\/1.1838184<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Park Y.<\/span>, <span class=\"author\" itemprop=\"author\">Takai M.<\/span>, <span class=\"author\" itemprop=\"author\">Nagai T.<\/span>, <span class=\"author\" itemprop=\"author\">Kishimoto T.<\/span>, <span class=\"author\" itemprop=\"author\">Lehrer C.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/215459491?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Microanalysis of impurity contamination in masklessly etched area using focused ion beam<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_215459491\"><span itemprop=\"name\"><strong>Japanese Journal of Applied Physics<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_215459491\" \/><span itemprop=\"volumeNumber\">36<\/span><\/span>  (<span itemprop=\"datePublished\">1997<\/span>), p. <span itemprop=\"pagination\">7712-7716<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_215459491\"><span itemprop=\"issn\">ISSN: 0021-4922<\/span><\/span><\/span><br \/>URL: <a href='https:\/\/www.scopus.com\/record\/display.uri?eid=2-s2.0-0031346547&origin=inward' target='blank' itemprop=\"url\">https:\/\/www.scopus.com\/record\/display.uri?eid=2-s2.0-0031346547&origin=inward<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Saggio M.<\/span>, <span class=\"author\" itemprop=\"author\">Montandon C.<\/span>, <span class=\"author\" itemprop=\"author\">Bourenkov A.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Pichler P.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/215458184?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Distortion of sims profiles due to ion beam mixing<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_215458184\"><span itemprop=\"name\"><strong>Radiation Effects and Defects in Solids<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_215458184\" \/><span itemprop=\"volumeNumber\">141<\/span><\/span>  (<span itemprop=\"datePublished\">1997<\/span>), p. <span itemprop=\"pagination\">37-52<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_215458184\"><span itemprop=\"issn\">ISSN: 1042-0150<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1080\/10420159708211555' target='blank' itemprop=\"sameAs\">10.1080\/10420159708211555<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Schwenke H.<\/span>, <span class=\"author\" itemprop=\"author\">Knoth J.<\/span>, <span class=\"author\" itemprop=\"author\">Fabry L.<\/span>, <span class=\"author\" itemprop=\"author\">Pahlke S.<\/span>, <span class=\"author\" itemprop=\"author\">Scholz R.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/215459170?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Measurement of shallow arsenic impurity profiles in semiconductor silicon using time-of-flight secondary ion mass spectrometry and total reflection X-ray fluorescence spectrometry<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_215459170\"><span itemprop=\"name\"><strong>Journal of The Electrochemical Society<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_215459170\" \/><span itemprop=\"volumeNumber\">144<\/span><\/span>  (<span itemprop=\"datePublished\">1997<\/span>), p. <span itemprop=\"pagination\">3979-3983<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_215459170\"><span itemprop=\"issn\">ISSN: 0013-4651<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1149\/1.1838122' target='blank' itemprop=\"sameAs\">10.1149\/1.1838122<\/a><\/li><\/ul><h3>1996<\/h3><ul class=\"cris-publications \" lang=\"en\"><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Bogen S.<\/span>, <span class=\"author\" itemprop=\"author\">Herden M.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/200580790?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Reduction of lateral parasitic current flow by buried recombination layers formed by high energy implantation of C or O into silicon<\/a><\/strong><\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Event\" style=\"font-style:italic\"><span itemprop=\"name\">Proceedings of the 1996 11th International Conference on Ion Implantation Technology<\/span> (<span itemprop =\"location\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"name\">Austin, TX, USA<\/span><\/span><span itemprop=\"startDate\" content=\"1996\"><\/span>)<\/span><br \/><span itemscope itemtype=\"http:\/\/schema.org\/Book\">In: <span itemprop=\"author\">Ishida E.; Mehta S.; Banerjee S.; Current M.; Smith T.C.; et al (ed.): <\/span><span itemprop=\"name\" style=\"font-weight:bold\">Proceedings of the 1996 11th International Conference on Ion Implantation Technology<\/span>, <span itemprop=\"publisher\" itemscope itemtype=\"http:\/\/schema.org\/Organization\"><span class=\"city\" itemprop=\"address\" itemscope itemtype=\"http:\/\/schema.org\/PostalAddress\"><span itemprop=\"addressLocality\">Piscataway, NJ, United States<\/span><\/span>: <\/span> <span itemprop=\"datePublished\">1996<\/span><\/span><br \/>URL: <a href='https:\/\/www.scopus.com\/record\/display.uri?eid=2-s2.0-0030373286\u2228igin=inward' target='blank' itemprop=\"url\">https:\/\/www.scopus.com\/record\/display.uri?eid=2-s2.0-0030373286\u2228igin=inward<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Bogen S.<\/span>, <span class=\"author\" itemprop=\"author\">Herden M.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/200579340?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Deep implants for semiconductor device applications<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_200579340\"><span itemprop=\"name\"><strong>Radiation Effects and Defects in Solids<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_200579340\" \/><span itemprop=\"volumeNumber\">140<\/span><\/span>  (<span itemprop=\"datePublished\">1996<\/span>), p. <span itemprop=\"pagination\">87-101<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_200579340\"><span itemprop=\"issn\">ISSN: 1042-0150<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1080\/10420159608212943' target='blank' itemprop=\"sameAs\">10.1080\/10420159608212943<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Jiao G.<\/span>, <span class=\"author\" itemprop=\"author\">Bogen S.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/200578762?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">A multi-laminate wire mesh ionizer for a Cs sputter negative ion source<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_200578762\"><span itemprop=\"name\"><strong>Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_200578762\" \/><span itemprop=\"volumeNumber\">382<\/span><\/span>  (<span itemprop=\"datePublished\">1996<\/span>), p. <span itemprop=\"pagination\">332-334<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_200578762\"><span itemprop=\"issn\">ISSN: 0168-9002<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/S0168-9002(96)00701-2' target='blank' itemprop=\"sameAs\">10.1016\/S0168-9002(96)00701-2<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Lipp S.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Lehrer C.<\/span>, <span class=\"author\" itemprop=\"author\">Demm E.<\/span>, <span class=\"author\" itemprop=\"author\">Pauthner S.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/200578448?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">A comparison of focused ion beam and electron beam induced deposition processes<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_200578448\"><span itemprop=\"name\"><strong>Microelectronics Reliability<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_200578448\" \/><span itemprop=\"volumeNumber\">36<\/span><\/span>  (<span itemprop=\"datePublished\">1996<\/span>), p. <span itemprop=\"pagination\">1779-1782<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_200578448\"><span itemprop=\"issn\">ISSN: 0026-2714<\/span><\/span><\/span><br \/>URL: <a href='https:\/\/www.scopus.com\/record\/display.uri?eid=2-s2.0-0030274008\u2228igin=inward' target='blank' itemprop=\"url\">https:\/\/www.scopus.com\/record\/display.uri?eid=2-s2.0-0030274008\u2228igin=inward<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Lipp S.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Lehrer C.<\/span>, <span class=\"author\" itemprop=\"author\">Frank B.<\/span>, <span class=\"author\" itemprop=\"author\">Demm E.<\/span>, <span class=\"author\" itemprop=\"author\">Pauthner S.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/200581059?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Tetramethoxysilane as a precursor for focused ion beam and electron beam assisted insulator (SiOx) deposition<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_200581059\"><span itemprop=\"name\"><strong>Journal of Vacuum Science & Technology B<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_200581059\" \/><span itemprop=\"volumeNumber\">14<\/span><\/span>  (<span itemprop=\"datePublished\">1996<\/span>), p. <span itemprop=\"pagination\">3920-3923<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_200581059\"><span itemprop=\"issn\">ISSN: 1071-1023<\/span><\/span><\/span><br \/>URL: <a href='https:\/\/www.scopus.com\/record\/display.uri?eid=2-s2.0-0000353753\u2228igin=inward' target='blank' itemprop=\"url\">https:\/\/www.scopus.com\/record\/display.uri?eid=2-s2.0-0000353753\u2228igin=inward<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Lipp S.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Lehrer C.<\/span>, <span class=\"author\" itemprop=\"author\">Frank B.<\/span>, <span class=\"author\" itemprop=\"author\">Demm E.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/200579941?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Investigations on the topology of structures milled and etched by focused ion beams<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_200579941\"><span itemprop=\"name\"><strong>Journal of Vacuum Science & Technology B<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_200579941\" \/><span itemprop=\"volumeNumber\">14<\/span><\/span>  (<span itemprop=\"datePublished\">1996<\/span>), p. <span itemprop=\"pagination\">3996-3999<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_200579941\"><span itemprop=\"issn\">ISSN: 1071-1023<\/span><\/span><\/span><br \/>URL: <a href='https:\/\/www.scopus.com\/record\/display.uri?eid=2-s2.0-0001398692\u2228igin=inward' target='blank' itemprop=\"url\">https:\/\/www.scopus.com\/record\/display.uri?eid=2-s2.0-0001398692\u2228igin=inward<\/a><\/li><\/ul><h3>1995<\/h3><ul class=\"cris-publications \" lang=\"en\"><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Bogen S.<\/span>, <span class=\"author\" itemprop=\"author\">K\u00f6rber K.<\/span>, <span class=\"author\" itemprop=\"author\">Gong L.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/200579046?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Comparison of retrograde and conventional p-wells in regard of latch-up susceptibility<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_200579046\"><span itemprop=\"name\"><strong>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_200579046\" \/><span itemprop=\"volumeNumber\">96<\/span><\/span>  (<span itemprop=\"datePublished\">1995<\/span>), p. <span itemprop=\"pagination\">411-415<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_200579046\"><span itemprop=\"issn\">ISSN: 0168-583X<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/0168-583X(94)00530-3' target='blank' itemprop=\"sameAs\">10.1016\/0168-583X(94)00530-3<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>, <span class=\"author\" itemprop=\"author\">Bogen S.<\/span>, <span class=\"author\" itemprop=\"author\">Hobler G.<\/span>, <span class=\"author\" itemprop=\"author\">Simionescu A.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/200580507?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Model for the electronic stopping of channeled ions in silicon around the stopping power maximum<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_200580507\"><span itemprop=\"name\"><strong>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_200580507\" \/><span itemprop=\"volumeNumber\">106<\/span><\/span>  (<span itemprop=\"datePublished\">1995<\/span>), p. <span itemprop=\"pagination\">47-50<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_200580507\"><span itemprop=\"issn\">ISSN: 0168-583X<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/0168-583X(95)00676-1' target='blank' itemprop=\"sameAs\">10.1016\/0168-583X(95)00676-1<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Gong L.<\/span>, <span class=\"author\" itemprop=\"author\">Petersen S.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/200579658?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Improved delineation technique for two dimensional dopant profiling<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_200579658\"><span itemprop=\"name\"><strong>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_200579658\" \/><span itemprop=\"volumeNumber\">96<\/span><\/span>  (<span itemprop=\"datePublished\">1995<\/span>), p. <span itemprop=\"pagination\">133-138<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_200579658\"><span itemprop=\"issn\">ISSN: 0168-583X<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/0168-583X(94)00472-2' target='blank' itemprop=\"sameAs\">10.1016\/0168-583X(94)00472-2<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Lipp S.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Franz G.<\/span>, <span class=\"author\" itemprop=\"author\">Demm E.<\/span>, <span class=\"author\" itemprop=\"author\">Petersen S.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/200580224?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Local material removal by focused ion beam milling and etching<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_200580224\"><span itemprop=\"name\"><strong>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_200580224\" \/><span itemprop=\"volumeNumber\">106<\/span><\/span>  (<span itemprop=\"datePublished\">1995<\/span>), p. <span itemprop=\"pagination\">630-635<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_200580224\"><span itemprop=\"issn\">ISSN: 0168-583X<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/0168-583X(95)00778-4' target='blank' itemprop=\"sameAs\">10.1016\/0168-583X(95)00778-4<\/a><\/li><\/ul><h3>1994<\/h3><ul class=\"cris-publications \" lang=\"en\"><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Bir\u00f3 L.<\/span>, <span class=\"author\" itemprop=\"author\">Gyulai J.<\/span>, <span class=\"author\" itemprop=\"author\">Bogen S.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/215404819?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Investigation of the effect of altered defect structure produced by photon assisted implantation on the diffusion of As in silicon during thermal annealing<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_215404819\"><span itemprop=\"name\"><strong>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_215404819\" \/><span itemprop=\"volumeNumber\">85<\/span><\/span>  (<span itemprop=\"datePublished\">1994<\/span>), p. <span itemprop=\"pagination\">925-928<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_215404819\"><span itemprop=\"issn\">ISSN: 0168-583X<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/0168-583X(94)95952-8' target='blank' itemprop=\"sameAs\">10.1016\/0168-583X(94)95952-8<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Pichler P.<\/span>, <span class=\"author\" itemprop=\"author\">Kasko I.<\/span>, <span class=\"author\" itemprop=\"author\">Thies I.<\/span>, <span class=\"author\" itemprop=\"author\">Lipp S.<\/span>, <span class=\"author\" itemprop=\"author\">Streckfuss N.<\/span>, <span class=\"author\" itemprop=\"author\">Gong L.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/200578155?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Practical aspects of ion beam analysis of semiconductor structures<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_200578155\"><span itemprop=\"name\"><strong>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_200578155\" \/><span itemprop=\"volumeNumber\">85<\/span><\/span>  (<span itemprop=\"datePublished\">1994<\/span>), p. <span itemprop=\"pagination\">356-362<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_200578155\"><span itemprop=\"issn\">ISSN: 0168-583X<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/0168-583X(94)95844-0' target='blank' itemprop=\"sameAs\">10.1016\/0168-583X(94)95844-0<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Gong L.<\/span>, <span class=\"author\" itemprop=\"author\">Bogen S.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Jung W.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/200575751?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Analytical description of high energy implantation profiles of boron and phosphorus into crystalline silicon<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_200575751\"><span itemprop=\"name\"><strong>Radiation Effects and Defects in Solids<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_200575751\" \/><span itemprop=\"volumeNumber\">127<\/span><\/span>  (<span itemprop=\"datePublished\">1994<\/span>), p. <span itemprop=\"pagination\">385-395<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_200575751\"><span itemprop=\"issn\">ISSN: 1042-0150<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1080\/10420159408221046' target='blank' itemprop=\"sameAs\">10.1080\/10420159408221046<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Gyulai J.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>, <span class=\"author\" itemprop=\"author\">Bir\u00f3 L.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Kuki A.<\/span>, <span class=\"author\" itemprop=\"author\">Korm\u00e1ny T.<\/span>, <span class=\"author\" itemprop=\"author\">Serfozo G.<\/span>, <span class=\"author\" itemprop=\"author\">Khanh N.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/200576688?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Athermal effects in ion implanted layers<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_200576688\"><span itemprop=\"name\"><strong>Radiation Effects and Defects in Solids<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_200576688\" \/><span itemprop=\"volumeNumber\">127<\/span><\/span>  (<span itemprop=\"datePublished\">1994<\/span>), p. <span itemprop=\"pagination\">397-404<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_200576688\"><span itemprop=\"issn\">ISSN: 1042-0150<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1080\/10420159408221047' target='blank' itemprop=\"sameAs\">10.1080\/10420159408221047<\/a><\/li><\/ul><h3>1993<\/h3><ul class=\"cris-publications \" lang=\"en\"><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Bir\u00f3 L.<\/span>, <span class=\"author\" itemprop=\"author\">Gyulai J.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Korm\u00e1ny T.<\/span>, <span class=\"author\" itemprop=\"author\">Tuan N.<\/span>, <span class=\"author\" itemprop=\"author\">Horv\u00e1th z.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/200577873?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Photon assisted implantation (PAI)<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_200577873\"><span itemprop=\"name\"><strong>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms<\/strong><\/span><\/span> (<span itemprop=\"datePublished\">1993<\/span>), p. <span itemprop=\"pagination\">607-611<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_200577873\"><span itemprop=\"issn\">ISSN: 0168-583X<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/0168-583X(93)96191-E' target='blank' itemprop=\"sameAs\">10.1016\/0168-583X(93)96191-E<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Bogen S.<\/span>, <span class=\"author\" itemprop=\"author\">Gong L.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/200577583?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">High energy implantation of 10B and 11B into (100) silicon in channel and in random direction<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_200577583\"><span itemprop=\"name\"><strong>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms<\/strong><\/span><\/span> (<span itemprop=\"datePublished\">1993<\/span>), p. <span itemprop=\"pagination\">659-662<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_200577583\"><span itemprop=\"issn\">ISSN: 0168-583X<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/0168-583X(93)96203-O' target='blank' itemprop=\"sameAs\">10.1016\/0168-583X(93)96203-O<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Ergele W.<\/span>, <span class=\"author\" itemprop=\"author\">Falter T.<\/span>, <span class=\"author\" itemprop=\"author\">Gong L.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/200575431?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Analysis of microstructured samples by focused ion beam sample preparation<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_200575431\"><span itemprop=\"name\"><strong>Microelectronic Engineering<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_200575431\" \/><span itemprop=\"volumeNumber\">21<\/span><\/span>  (<span itemprop=\"datePublished\">1993<\/span>), p. <span itemprop=\"pagination\">375-378<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_200575431\"><span itemprop=\"issn\">ISSN: 0167-9317<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/0167-9317(93)90095-M' target='blank' itemprop=\"sameAs\">10.1016\/0167-9317(93)90095-M<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Gong L.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Bogen S.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/200576083?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">A novel delineation technique for 2D-profiling of dopants in crystalline silicon<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_200576083\"><span itemprop=\"name\"><strong>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_200576083\" \/><span itemprop=\"volumeNumber\">74<\/span><\/span>  (<span itemprop=\"datePublished\">1993<\/span>), p. <span itemprop=\"pagination\">186-190<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_200576083\"><span itemprop=\"issn\">ISSN: 0168-583X<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/0168-583X(93)95040-C' target='blank' itemprop=\"sameAs\">10.1016\/0168-583X(93)95040-C<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Kasko I.<\/span>, <span class=\"author\" itemprop=\"author\">Dehm C.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/200577293?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Effect of ion-beam mixing temperature on cobalt silicide formation<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_200577293\"><span itemprop=\"name\"><strong>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms<\/strong><\/span><\/span> (<span itemprop=\"datePublished\">1993<\/span>), p. <span itemprop=\"pagination\">786-789<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_200577293\"><span itemprop=\"issn\">ISSN: 0168-583X<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/0168-583X(93)90682-V' target='blank' itemprop=\"sameAs\">10.1016\/0168-583X(93)90682-V<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Kroninger F.<\/span>, <span class=\"author\" itemprop=\"author\">Streckfuss N.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Falter T.<\/span>, <span class=\"author\" itemprop=\"author\">Ryzlewicz C.<\/span>, <span class=\"author\" itemprop=\"author\">Pfitzner L.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/200576375?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Application of advanced contamination analysis for qualification of wafer handling systems and chucks<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_200576375\"><span itemprop=\"name\"><strong>Applied Surface Science<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_200576375\" \/><span itemprop=\"volumeNumber\">63<\/span><\/span>  (<span itemprop=\"datePublished\">1993<\/span>), p. <span itemprop=\"pagination\">93-98<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_200576375\"><span itemprop=\"issn\">ISSN: 0169-4332<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/0169-4332(93)90070-R' target='blank' itemprop=\"sameAs\">10.1016\/0169-4332(93)90070-R<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Streckfuss N.<\/span>, <span class=\"author\" itemprop=\"author\">Schork R.<\/span>, <span class=\"author\" itemprop=\"author\">Kroninger F.<\/span>, <span class=\"author\" itemprop=\"author\">Falter T.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/200577019?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Contamination control and ultrasensitive chemical analysis<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_200577019\"><span itemprop=\"name\"><strong>Applied Surface Science<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_200577019\" \/><span itemprop=\"volumeNumber\">63<\/span><\/span>  (<span itemprop=\"datePublished\">1993<\/span>), p. <span itemprop=\"pagination\">79-87<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_200577019\"><span itemprop=\"issn\">ISSN: 0169-4332<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/0169-4332(93)90068-M' target='blank' itemprop=\"sameAs\">10.1016\/0169-4332(93)90068-M<\/a><\/li><\/ul><h3>1992<\/h3><ul class=\"cris-publications \" lang=\"en\"><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Antos L.<\/span>, <span class=\"author\" itemprop=\"author\">Gyulai J.<\/span>, <span class=\"author\" itemprop=\"author\">Khanh N.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/200568836?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">End-of-range disorder influenced by inherent oxygen in silicon<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_200568836\"><span itemprop=\"name\"><strong>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_200568836\" \/><span itemprop=\"volumeNumber\">71<\/span><\/span>  (<span itemprop=\"datePublished\">1992<\/span>), p. <span itemprop=\"pagination\">399-405<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_200568836\"><span itemprop=\"issn\">ISSN: 0168-583X<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/0168-583X(92)95357-W' target='blank' itemprop=\"sameAs\">10.1016\/0168-583X(92)95357-W<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Bogen S.<\/span>, <span class=\"author\" itemprop=\"author\">Gong L.<\/span>, <span class=\"author\" itemprop=\"author\">Jung W.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>, <span class=\"author\" itemprop=\"author\">Gyulai J.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/200569123?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">High energy ion implantation for semiconductor application at Fraunhofer-AIS, Erlangen<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_200569123\"><span itemprop=\"name\"><strong>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_200569123\" \/><span itemprop=\"volumeNumber\">62<\/span><\/span>  (<span itemprop=\"datePublished\">1992<\/span>), p. <span itemprop=\"pagination\">410-415<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_200569123\"><span itemprop=\"issn\">ISSN: 0168-583X<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/0168-583X(92)95267-U' target='blank' itemprop=\"sameAs\">10.1016\/0168-583X(92)95267-U<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Kroninger F.<\/span>, <span class=\"author\" itemprop=\"author\">Streckfusse N.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>, <span class=\"author\" itemprop=\"author\">Margail J.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/200568532?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Characterization of metal impurities in silicon-on-insulator material<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_200568532\"><span itemprop=\"name\"><strong>Materials Science and Engineering B-Advanced Functional Solid-State Materials<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_200568532\" \/><span itemprop=\"volumeNumber\">12<\/span><\/span>  (<span itemprop=\"datePublished\">1992<\/span>), p. <span itemprop=\"pagination\">195-198<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_200568532\"><span itemprop=\"issn\">ISSN: 0921-5107<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/0921-5107(92)90285-H' target='blank' itemprop=\"sameAs\">10.1016\/0921-5107(92)90285-H<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Gong L.<\/span>, <span class=\"author\" itemprop=\"author\">Bogen S.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Jung W.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/110368764?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Simulation of high energy implantation profiles in crystalline silicon<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_110368764\"><span itemprop=\"name\"><strong>Microelectronic Engineering<\/strong><\/span><\/span> (<span itemprop=\"datePublished\">1992<\/span>), p. <span itemprop=\"pagination\">495-498<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_110368764\"><span itemprop=\"issn\">ISSN: 0167-9317<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/0167-9317(92)90482-7' target='blank' itemprop=\"sameAs\">10.1016\/0167-9317(92)90482-7<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Streckfusse N.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Zielonka G.<\/span>, <span class=\"author\" itemprop=\"author\">Kroninger F.<\/span>, <span class=\"author\" itemprop=\"author\">Ryzlewicz C.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/200568265?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Analysis of trace metals on silicon surfaces<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_200568265\"><span itemprop=\"name\"><strong>Fresenius Zeitschrift f\u00fcr Analytische Chemie<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_200568265\" \/><span itemprop=\"volumeNumber\">343<\/span><\/span>  (<span itemprop=\"datePublished\">1992<\/span>), p. <span itemprop=\"pagination\">765-768<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_200568265\"><span itemprop=\"issn\">ISSN: 0016-1152<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1007\/BF00633562' target='blank' itemprop=\"sameAs\">10.1007\/BF00633562<\/a><\/li><\/ul><h3>1991<\/h3><ul class=\"cris-publications \" lang=\"en\"><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Gyulai J.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>, <span class=\"author\" itemprop=\"author\">Khanh N.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/215229608?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Effect of oxygen on the formation of end-of-range disorder in implantation amorphized silicon<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_215229608\"><span itemprop=\"name\"><strong>Journal of Materials Research<\/strong><\/span><\/span> <span itemprop=\"isPartOf\" itemscope itemtype=\"http:\/\/schema.org\/PublicationVolume\"><link itemprop=\"isPartOf\" href=\"#periodical_215229608\" \/><span itemprop=\"volumeNumber\">6<\/span><\/span>  (<span itemprop=\"datePublished\">1991<\/span>), p. <span itemprop=\"pagination\">1695-1700<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_215229608\"><span itemprop=\"issn\">ISSN: 0884-2914<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1557\/JMR.1991.1695' target='blank' itemprop=\"sameAs\">10.1557\/JMR.1991.1695<\/a><\/li><li itemscope itemtype=\"http:\/\/schema.org\/ScholarlyArticle\"><span class=\"author\" itemprop=\"author\">Oechsner R.<\/span>, <span class=\"author\" itemprop=\"author\">Kluge A.<\/span>, <span class=\"author\" itemprop=\"author\">Frey L.<\/span>, <span class=\"author\" itemprop=\"author\">Ryssel H.<\/span>:<br \/><span class=\"title\" itemprop=\"name\"><strong><a href=\"https:\/\/cris.fau.de\/publications\/215229898?lang=en_GB\" title=\"Detailansicht in neuem Fenster &ouml;ffnen\">Tribological properties of carbonized photoresist<\/a><\/strong><\/span><br \/>In: <span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_215229898\"><span itemprop=\"name\"><strong>Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms<\/strong><\/span><\/span> (<span itemprop=\"datePublished\">1991<\/span>), p. <span itemprop=\"pagination\">793-797<\/span><br><span itemscope itemtype=\"http:\/\/schema.org\/Periodical\" itemid=\"#periodical_215229898\"><span itemprop=\"issn\">ISSN: 0168-583X<\/span><\/span><\/span><br \/>DOI: <a href='https:\/\/doi.org\/10.1016\/0168-583X(91)95706-J' target='blank' itemprop=\"sameAs\">10.1016\/0168-583X(91)95706-J<\/a><\/li><\/ul><\/div>\n\n\n\n<p class=\"wp-block-paragraph\"><\/p>\n","protected":false},"excerpt":{"rendered":"","protected":false},"author":998,"featured_media":0,"parent":5954,"menu_order":3,"comment_status":"closed","ping_status":"closed","template":"","meta":{"_rrze_cache":"enabled","_access_permission":"","_rrze_multilang_single_locale":"en_US","_rrze_multilang_single_source":"https:\/\/leb.cms.rrze.uni-erlangen.de\/?page_id=183","_faue_teaser_image_id":0,"footnotes":""},"page_category":[102],"page_tag":[],"class_list":["post-6437","page","type-page","status-publish","hentry","page_category-forschung","en-US"],"faue_teaser_image_url":"","_links":{"self":[{"href":"https:\/\/www.leb.tf.fau.de\/wp-json\/wp\/v2\/pages\/6437","targetHints":{"allow":["GET"]}}],"collection":[{"href":"https:\/\/www.leb.tf.fau.de\/wp-json\/wp\/v2\/pages"}],"about":[{"href":"https:\/\/www.leb.tf.fau.de\/wp-json\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"https:\/\/www.leb.tf.fau.de\/wp-json\/wp\/v2\/users\/998"}],"replies":[{"embeddable":true,"href":"https:\/\/www.leb.tf.fau.de\/wp-json\/wp\/v2\/comments?post=6437"}],"version-history":[{"count":1,"href":"https:\/\/www.leb.tf.fau.de\/wp-json\/wp\/v2\/pages\/6437\/revisions"}],"predecessor-version":[{"id":6439,"href":"https:\/\/www.leb.tf.fau.de\/wp-json\/wp\/v2\/pages\/6437\/revisions\/6439"}],"up":[{"embeddable":true,"href":"https:\/\/www.leb.tf.fau.de\/wp-json\/wp\/v2\/pages\/5954"}],"wp:attachment":[{"href":"https:\/\/www.leb.tf.fau.de\/wp-json\/wp\/v2\/media?parent=6437"}],"wp:term":[{"taxonomy":"page_category","embeddable":true,"href":"https:\/\/www.leb.tf.fau.de\/wp-json\/wp\/v2\/page_category?post=6437"},{"taxonomy":"page_tag","embeddable":true,"href":"https:\/\/www.leb.tf.fau.de\/wp-json\/wp\/v2\/page_tag?post=6437"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}