{"id":6414,"date":"2026-07-05T12:39:07","date_gmt":"2026-07-05T10:39:07","guid":{"rendered":"https:\/\/www.leb.tf.fau.de\/?page_id=6414"},"modified":"2026-07-05T12:43:09","modified_gmt":"2026-07-05T10:43:09","slug":"nitrid-halbleiter-ag-schimmel","status":"publish","type":"page","link":"https:\/\/www.leb.tf.fau.de\/en\/nitrid-halbleiter-ag-schimmel\/","title":{"rendered":"Nitride Semiconductor Research Group"},"content":{"rendered":"\n
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Scientific Concept of the Nitride Semiconductor Research Group<\/h3>\n\n\n\n
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The research group investigates nitride semiconductors across the entire development chain, from controlled synthesis and the mechanistic understanding of crystal growth and defect formation to device concepts based on these materials.<\/p>\n\n\n\n

The group’s core methodological pillars comprise ammonothermal crystal growth, in situ<\/em> monitoring under high-pressure conditions, and numerical modeling.<\/p>\n\n\n\n

The goal is to systematically establish the relationships between structure, defects, and functional properties, thereby enabling the targeted development of new materials for applications in electronics and photonics. <\/p>\n<\/div><\/div>\n<\/div>\n\n\n\n

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Research Focus Areas<\/h3>\n\n\n\n

Ammonothermal Crystal Growth<\/h5>\n\n\n\n

Investigation of dissolution, transport, and crystallization under high-pressure conditions with the aim of enabling the controlled growth of high-quality nitride semiconductors with tailored properties.<\/p>\n\n\n\n

In Situ Monitoring for Process Understanding<\/h5>\n\n\n\n

Development and application of technologies for in situ<\/em> monitoring of ammonothermal processes to elucidate growth dynamics, defect formation, and mass transport, as well as to experimentally validate numerical models.<\/p>\n\n\n\n

Defects and Doping Mechanisms<\/h5>\n\n\n\n

Investigation of the structural and electronic properties of semiconducting nitrides and the targeted control of defects and doping processes, with a particular focus on ammonothermal crystal growth.<\/p>\n\n\n\n

Numerical Modeling<\/h5>\n\n\n\n

Simulation of temperature and flow fields for the quantitative description and systematic, knowledge-based optimization of process conditions, with the long-term goal of extending the modeling approach to include a coupled description of crystal growth processes.<\/p>\n\n\n\n

Integration into Electronic and Photonic Devices<\/h5>\n\n\n\n

Investigation of functional structures for integration into electronic and photonic devices based on advanced semiconductor materials.<\/p>\n\n\n\n

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Team<\/h3>\n\n\n\n
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The Emmy Noether Research Group in the High-Pressure Laboratory of the Faculty of Engineering (February 2026).<\/p>\n\n\n\n

Group leader<\/strong><\/p>\n\n\n\n

Dr.-Ing. Saskia Schimmel<\/a>

Doctoral candidates<\/strong><\/p>\n\n\n\n